review article a review on the low-dimensional and...

Review ArticleA Review on the Low-Dimensional and HybridizedNanostructured Diamond Films

Hongdong Li Shaoheng Cheng Jia Li and Jie Song

State Key Lab of Superhard Materials Jilin University Changchun 130012 China

Correspondence should be addressed to Hongdong Li hdlijlueducn

Received 30 April 2015 Accepted 1 July 2015

Academic Editor Jose Alvarez

Copyright copy 2015 Hongdong Li et al This is an open access article distributed under the Creative Commons Attribution Licensewhich permits unrestricted use distribution and reproduction in any medium provided the original work is properly cited

In the last decade besides the breakthrough of high-rate growth of chemical vapor deposited single-crystal diamonds numerousnanostructured diamond films have been rapidly developed in the research fields of the diamond-based sciences and industrialapplications The low-dimensional diamonds of two-dimensional atomic-thick nanofilms and nanostructural diamond on thesurface of bulk diamond films have been theoretically and experimentally investigated In addition the diamond-related hybridnanostructures of n-type oxidep-type diamond and n-type nitridep-type diamond having high performance physical andchemical properties are proposed for further applications In this review we first briefly introduce the three categories of diamondnanostructures and then outline the current advances in these topics including their design fabrication characterization andproperties Finally we address the remaining challenges in the research field and the future activities

1 Introduction

Diamond has been deeply investigated and widely applied innumerous fields because of its unique properties of wide bandgap high thermal conductivity hardness good chemical sta-bility chemical inertness high temperature stability inherentbiocompatibility and so forth which make it suitable foruse in various high performance optoelectronic devicesIn addition to conventional bulk diamond crystals (egchemical vapor deposited (CVD) single crystal diamondsand polycrystalline diamond films) the fabrication andproperties of diamond-related nanostructures have attracteda significant amount of interest [1] Designing newnanostruc-tures of diamond and exploiting novel properties become animportant hot topic in current researches With increasingthe interest of two-dimensional (2D) graphene in the recentdecade since 2004 [2] the atomic-thickness 2D diamondnanofilms without and with surface functional terminationshave emerged [3ndash7]These nanofilms have smaller band gapsand varying magnetic properties with respect to those ofthe bulk diamond which are strongly dependent on layernumber (119899) and surface functionalizationsThis new categoryof diamondhas been constructed though themost researchesare based on theoretical calculations thus far The other

low-dimensional nanodiamonds (eg nanowires nanopitsand nanotips) have been experimentally generated by ldquotop-downrdquo approach [8 9] on the surface of bulk single-crystaldiamonds andor polycrystalline diamond films and showsome excellent optical electronic and biological propertiesThe third category of heterojunction structures consists ofvarious nanosized semiconducting materials and bulk poly-crystalline diamond films (single-crystal diamonds) whichare favorable for achieving high performance optoelectronicdevices The nanosized materials are generally of n-typemetallic compounds (such as zinc oxide ZnO [10 11] titaniaTiO2[12] and gallium nitride GaN [13]) deposited on the

p-type diamond In this review we discuss and summarizethe recent developments of fabrications characterizationsproperties and potential applications based on the abovethree diamond-related topics These works in the recent 10years will be beneficial to the future development of diamondmaterial with more novel structures and better properties forapplications

2 Two-Dimensional Diamond Nanofilms

In recent decades besides the conventional bulk carbona-ceous materials (ie graphite diamond and disordered

Hindawi Publishing CorporationJournal of NanomaterialsVolume 2015 Article ID 692562 15 pageshttpdxdoiorg1011552015692562

2 Journal of Nanomaterials

(a)

(b)

AB AA

(c)

ABC AAA AAC

(d)

Figure 1 Atomic geometry of the studied two-dimensional (2D) carbon nanofilms (a) graphene (b) graphane (c) diamane of two layersand (d) diamane of three layers Carbon (hydrogen) atoms are marked with yellow (blue) For each diamane possible stacking sequences ofcarbon layers are presented on the right side [19]

carbon) various new nanostructures (such as fullerene [14]carbon nanotubes [15] graphene [2] and diamond clusters[16]) have appeared in the family of carbon In 2007 fullhydrogenation on both sides of graphene (with CxHx)referred to as ldquographanerdquo was theoretically predicted [5]and this configuration with buckling feature is similar tothat of hydrogenated diamond (111) planes Chernozatonskiiet al considered a C

2H nanostructure [6] based on bilayer

graphene to constitute a 2D hydrogenated ⟨111⟩ diamondfilm with a thickness of less than 1 nm which is called ldquodia-manerdquo It was theatrically demonstrated that C

2H diamane is

more stable thanCHgraphane Both hydrogenated diamond-like films (graphane and diamane) have relatively wide bandgaps narrower than that of bulk diamond within 1 eV [5 1718] These early works open up a new research area of lowdimensional diamond Figure 1 shows the atomic geometryof the 2D carbon nanofilms [19]The authors summarized thecalculated formation energy and band gap width of differenthydrocarbon structures as a function of hydrogen content

Zhu et al investigated the layer number (n) dependentformation and electronic properties of hydrogenated 2Ddiamond nanofilms originated from few-layer graphene [3]The band gap monotonically decreases with the increasingthickness (ie 119899) reflecting a quantum confinement effect(Figure 2(a)) Due to the presence of hydrogen passivatedsurface the tunable gaps are localized in a region lower thanthat of bulk diamond Based on building blocks ofC

35andC

84

with octahedral morphology Li and Zhao [7] described thestructurally optimized few-layer (six-layer) 2D diamond-related nanostructure (nanoflake) having a diamond matrixcovered with graphite fragments As shown in Figure 3 thetwo outmost layers were delaminated and partially graphi-tized having a nonsymmetrical reconstruction It revealedthat the stability of these 2D diamond nanofilms generallyrequires termination with functional groups or reconstruc-tive sp2-carbon surface

Different from the previous first-principles calculationsbased on few-layer graphene and building blocks of carbonclusters Li et al [4] performed n-dependent structuraloptimization of 2D diamond nanofilms (Figure 4) beginningfrom the original diamond (111) layers without terminationof foreign atoms cleaved from bulk cubic diamond withsingle-dangling-bond surface At 119899 le 5 the films arerelaxed into a few graphene layers whereas for 6 le 119899 le11 a gradient-graphite-diamond-like (GGDL) structure withgradient changes of interplanar spacing and buckling featureis predicted A threshold 119899 = 12 is determined to realize thethinnest two-dimensional (111)-oriented diamond film For119899 ge 12 the diamond phase is energetically stabilized Theeffects of semihydrogenation (SH) and full hydrogenation(FH) on the structural evolution and properties of 2D dia-mond nanofilms were further investigated [20] Both of thehydrogenation processes play an important role in stabilizingthe 2D diamond structures Interestingly for the SH cases

Journal of Nanomaterials 3

42

36

30

24

1 2 3 4 5

Band

gap

(eV

)

n

(a)

Band

gap

(eV

)

n

12

11

10

09

08

07

0 2 4 6 8 10

(b)

Figure 2 (a) Band gaps of fully hydrogenated two-dimensional (2D) cubic diamond nanofilms as a function of layer number (119899)The dashedline corresponds to the band gap of bulk diamond [3] (b) Band gaps of semihydrogenated 2D diamond nanofilms as a function of 119899 Thesolid line represents the fitted curve [20]

(a) (b)

Figure 3 The initial structure (a) and the deformation electron density picture (b) for the two-dimensional (2D) diamond nanoflakes with6 layers after structural geometry optimization generated from cuboctahedral nanodiamond C

142as the building block [7]

the spin-related band gaps are in an infrared region of 074ndash117 eV (Figure 2(b)) and a ferrimagnetism characteristicis presented determined by the unpaired electrons on theoutmost 3 layers on nonhydrogenated side (Figure 5) whichare strongly dependent on 119899 Layer-by-layer partial densityof states (PDOS) revealed that the carbons with danglingbonds near the surface determine the tuning electronic andmagnetic properties of 2D diamond nanofilms [4 20]

For the novel ultrathin diamond nanofilms it is desirableto know how defects and dopants can tune the correspondingelectronic properties Fyta [21] recently theoretically inves-tigated the electronic structure of diamane by introducingdopants of boron nitrogen sulfur atoms and defects ofnitrogen vacancy (NV) with different charged states As ageneral remark (summarized in Table 1) adding dopantsor defects closes the energy gap of ideal diamane films asthese provide available electronic states within that gap Theamount of band gap reduction is associated with the chosendopants or the charge state of the NV defect Adding adopant with a large size mismatches to the lattice and leadsto a tendency to stabilize the doping atoms at surface andaccordingly the electrons are localized around the dopant

Table 1 Bond lengths (in A) the HOMO-LUMO gap (119864119892 in eV)

and the relative difference (in ) of this gap with respect to that ofthe ideal diamane film (1198640

119892) for different diamane films [21]

Structure 119903(12)119887119903(13)

119887119903(14)

119887119903(15)

119887119903(CH)119887119864119892Δ1198641198921198640119892

diam 1550 1534 1532 1533 1126 405N-diam 1554 1523 1523 1523 1136 399 15B-diam 1613 1620 1620 1563 1130 371 84S-diam 2901 1793 1792 1792 1130 140 654NV0-diam 1452 1457 1452 1144 067 834NVminus-diam 1447 1447 1447 1151 061 849NV+-diam 1458 1457 1459 1140 095 765vac-diam 1536 1624 1536 1117 140 654

site Furthermore the spins of these NV centers in diamaneclose to the surface could prove much more efficiency thanNV center in bulk diamond in nanomagnetic resonanceimaging (nano-MRI) applications The results are relevant topotential applications of diamane films in nanoelectronics

Besides the calculations finding a possible fabricationroute of scaled 2D diamond nanofilms is more necessary for


(a)

(b)

(c) (d)

(a998400) (b998400)

(c998400) (d998400)

Δm

Δm+1

Lm

dm

dm

Figure 4 Structural evolution from original two-dimensional (2D) atomically few layer diamonds The side views of the optimizedconfigurations and the corresponding electronic charge density features for the cases of 119899 = 2 (a a1015840) 119899 = 7 (b b1015840) 119899 = 11 (c c1015840) and119899 = 12 (d d1015840) respectively The thicknesses are normalized [4]

the practical application Li et al [4 20] pointed out possibleroutes to experimentally realize the freestanding layered2D diamond by laser ablation from bulk diamond andorfind these nanosized diamond layers from ball milling anddetonation products CVD technique is a suitable method toobtain mass products of the atomically thin diamond filmsTo obtain the hydrogenated diamond films treating in H

2

ambient (at high temperature andor in H2plasma) for 2D

pure nanofilms or transition from hydrogenated few-layergraphene under high pressure might be feasible Throughthe first-principles density functional theory calculationsOdkhuu et al [22] investigated the transformation of a fewlayers of graphene (with hydrogenation or fluorination on theouter surface of the top graphene layer) into sp3-bonded thinoverlayers (also named as diamond-like layer) on metallicsurfaces (Co Ni and Cu) (Figure 6) Strong hybridizationbetween the sp3 dangling bonds orbitals and the metallicsurface d

119911

2 orbitals stabilizes the sp3-bonded carbon layersAnd it was speculated that the metalsp3 carbon interfacesmight be a new candidate for superconductivity study Thecomputational results suggest a route to experimental realiza-tion of large-area ultrathin sp3-bonded carbon films onmetalsurfaces

Most recently Kvashnin et al [23] further theoreticallydemonstrated that few-layer graphene can undergo phasetransformation into thin diamond film under reduced orno pressure if the process is facilitated by hydrogenation ofthe surfaces Such a ldquochemically induced phase transitionrdquois inherently nanoscale phenomenon when the surface con-ditions directly affect thermodynamics and the transition

pressure depends greatly on film thickness The role of finitediameter of graphene flakes and possible formation of thediamond films with the (110) surface was described LaterAntipina and Sorokin [24] usedHH

2 F F2 H2O andNH

3as

the adsorbates to produce high-quality films of diamond fromfew-layer graphene at different temperatures and pressures byab initio calculations The functionalized cubic or hexagonaldiamond films with specific surface would show well-definedproperties

Summarily the above results underline the strong dif-ferences of the structures and properties of those atomicallythick 2D diamond nanofilms compared to bulk diamondand these should have implications in various potentialnanoelectronical applications

3 Nanostructural Surface of BulkDiamond Film

Asdiamond is an importantmaterial for its outstanding prop-erties in many aspects fabrication of micronanodiamond(films) is essential to enhance the intrinsic properties andto find new properties for fully realizing the potentials ofdiamond in numerous research fields The designs of for-matting diamondmicrometer- and nano-structures generallyinclude two approaches of ldquobottom-uprdquo and ldquotop-downrdquo Inthis review we focus on the ldquotop-downrdquo method that haswidely been applied because of its controllability varietyand large area Up to now various top-down nanofabricationtechniques have been explored for well-designed diamondnanostructures [8 9 25ndash37]


i = 6

i = 5

i = 4

i = 3

i = 2

i = 1

All-layer

Den

sity

of st

ates

(DO

S a

u)

minus10 minus5 0 5 10Energy (eV)

2213

1660

1106

5532 times 10minus1

minus3767 times 10minus6

Figure 5 Partial density of states (PDOS) and spin density picture of the calculated semihydrogenated two-dimensional (2D) diamondnanofilm with 119899 = 6 Layer-by-layer PDOS (119894 = 1 to 6) are taken from the outmost layer on one side to the opposite side in turn The red(green) and black (blue) lines are corresponding PDOS of p (s)-orbital electrons with spin-up and spin-down respectively The Fermi levelis set to 0 eV The intensities of the total and partial DOS are normalized The pictures of spin density are labeled with the correspondingmagnetic moments around the atoms [20]

(I)

312Aring

207Aring194Aring204Aring

(a)

(II)

308Aring


(b)

(III)

158Aring


(c)

0

minus20

minus40

minus60

Relat

ive e

nerg

y (k

calm

ol)

308 158C-C distance (Aring)

(I)

(II)

(III)81 kcalmol

TSZigzag-like (II)

Boat-like (II)

Chair-like (II III)

(d)

Figure 6 The energetics of conversion of bilayer graphene into sp3 carbon film on metal surface For details see [22]

In 1997 Shiomi [8] realized nanosized columnar structurefrom polycrystalline diamond films by reactive ion etching(RIE) in O

2CF4plasma and the examined electron field

emission characteristics were improved which triggeredactivities of fabricating nanostructures on diamond filmsMasuda et al (in 2000 [9]) introduced ordered through-holeanodic porous alumina membranes employed on top of bothundoped and boron-doped p-type CVD diamond films andthen fabricated nanohoneycomb diamond film using a radio-frequency driven (at 1356MHz) oxygen plasma etchingtreatment (Figure 7) Fine structures with a high degree ofordering can be obtained over large areas (sim1 cm2) controlledby changing the geometrical structure of the porous aluminamembrane mask The through holes in the masks have

high aspect ratios (depth-to-diameter) compared to thoseused in conventional lithography Using the nanohoneycombdiamond as electrodes it is found that the capacitance valuesincreased depending on the pore dimensions and a filmof pore diameter 400 nm and pore depth 3 120583m exhibited a400-fold increase in the capacitance (391 times 10minus3 F cmminus2) incomparison to an as-deposited surface film (Figure 7(c)) [25]

By depositing gold nanodots as etching masks on theas-grown polycrystalline nanodiamond (ND) and microdi-amond (MD) films Zou et al (in 2008 [26]) fabricated high-density uniform diamond nanopillar arrays by employingbias-assisted RIE in a hydrogenargon plasma (Figure 8)The formation of nanopillar structure is associated with thedirectional physical etchingsputtering by ion bombardment


(a) (b)

120

80

40

00

105Ω

cm2 )

00 40 80105 Ω cm2)

103Ω

cm2 )

103 Ω cm2)

90

60

30

0000 30 60

0000

0025

0050

010105 Hz

0010

00250050

010

105 Hz

minusIm

Z(

minusIm

Z(

Re Z (Re Z (

(c)

Figure 7 (a) Schematic diagram of the fabrication procedure for the diamond nanohoneycomb (b) Cross-sectional view of the diamondnanohoneycomb (c) Complex-plane plots of the impedance for electrodes of as-deposited diamond (left) and pore types 400 nm times 3 120583m(right) at 104 V versus AgAgCl [9 25]

and selective chemical etching of sp2 carbons by reactivehydrogen atoms and ions The density and geometry ofthese nanopillars were determined by the initial structureof diamond films and reactive ion etching conditions Thesenanopillars have potential applications in high performancediamond-based biomedical and chemical sensors and inmechanical and thermal management

Using the similar nanoassembled Au nanoparticles (NPs)as the mask another type of hybrid structure of Au-NPdiamond-nanopit has been fabricated on single-crystaldiamond by oxygen plasma etching (Figure 9(a)) [27ndash29]where the diamond-nanopits are different to diamondnanopillars andor nanowires arrays generated from poly-crystalline diamond films having abundant grain boundaries


(a) (b)

(c) (d)

Figure 8 SEM morphologies showing (a) the nanocrystalline diamond film with a flat surface (b) the gold nanodots formed on thenanocrystalline diamond surface and (c) nanocrystalline diamond film with nanopillar array collected by sample tilting and (d) from thecross section [26]

140

120

100

80

60

40

20

0

Cros

s sec

tion

(nm

2 times10

minus16 )

400 500 600 700 800 900Wavelength (nm)

15

12

09

06

minus400

minus200 0

200

400

X (nm)

24201612080400

Z(n

m)

120576 = 10120576 = 576

(b) times103

1120583m

(a)

Figure 9 (a) The planar SEM image of the surface of single crystal diamond after oxygen plasma etching for 60 s having nanopits infilledwith Au nanoparticles (b) Calculated LSPR scattering cross section spectra of a semiellipsoidal Au NP placed in air (dark) and on diamond(red) showing the resonance peaks at 550 (in air) and 718 nm (on diamond)The inset of (b) reveals the cross-sectional electric field intensity(|119864|2) distribution in a diamond-nanopit [27 28]


(1) Diamond nanoparticle seeding

(2) RIE (t = 0) (3) RIE (t gt 0) (4) Final surface structure

d

a

DiamondDiamond Diamond Diamond

Plasma Plasma

(a)

10

0100

8060

4020

00

20

40

60

80

100

(nm

)

(nm

)

(b)

15

1

05

0

03 06 09

Curr

ent (120583A

)

(A)

(B)

(C)

Potential (V versus AgAgCl)

(c)

Figure 10 (a) Schematic plots of fabrication of diamond nanowires by a reactive ion etching (RIE) (b) Typical AFM image of the fabricateddiamond nanowires (c) Differential pulse voltammograms of 10mM Fe(CN)

6

3minus4minus in pH 74 phosphate buffer as detected on diamondnanowires after marker ss-DNA immobilization (curve (A)) after exposure to single-based mismatched DNA (10 nM curve (B)) and afterexposure to complementary target DNA (10 nM curve (C)) [30 31]

[26] The three-dimensional finite-difference time-domain(FDTD) simulations revealed strong localized surface plas-mon resonance (LSPR) scattering and enhanced electric fieldexhibited by this hybrid nanoassembled-metaldiamond-nanopit (Figure 9(b)) Experimentally with excitations at 633and 830 nm close to the calculated LSPR wavelength thephotoluminescence (PL) intensities of the peak at 738 nmoriginating from the single-photon source of silicon vacancy(SiV) centers in diamond were significantly enhanced byfactors ofsim100 andsim50 respectively with respect to that fromnormal Si-doped diamond without the hybrid structure [27]This structure could also realize a larger surface enhancedRaman scattering (SERS) enhancement factor [28] Becauseof the unique advantages of diamond the diamond-nanopitstructure can serve as a robust structural template for fabri-cating various membranes with pyramid-structured surface[29]

The other strategy of mask is using diamond nanoparti-cles [30ndash32] By depositing diamond nanoparticles and fol-lowing a RIE in an O

2CF4gas mixture Yang et al [30] real-

ized diamond nanowires on boron-doped single-crystalline

CVD diamond films after a top-down procedure (Figure 10)As an electrode the active area of diamond nanowires hasbeen significantly enhanced Furthermore the tip-modifieddiamond nanowires are promising with respect to biosensorapplications When used as DNA sensor the sensitivity isabout 100 to 1000 times better compared to published dataavailable in the literature where comparable DNA strandshave been used with comparable redox mediator moleculeson planar gold electrodes gold nanowires and diamond [31]Based on the similar method Lu et al fabricated verticallyaligned diamond nanoneedles on polycrystalline diamondnanofilms [32] Gas sensingmeasurements with the diamondnanoneedles were performed at room temperature for bothreducing (NH

3) and oxidizing (NO

2) gases Due to the

increased surface area-to-volume ratio and nanotip effect ofthe diamond nanoneedles great enhancements of chemicalsensing ability and sensitivity were presented compared withthe unmodified nanodiamond films

The development of a robust light source that emitsone photon at a time will allow new technologies suchas secure communication through quantum cryptography


NV

C

(a) (b)

(c)

(d) (e)

Figure 11 Single-photon source based on an NV centre in a diamond nanowire For details see [34]

Luminescent centers in diamond (eg nitrogen vacancy(NV) centers) have recently emerged as a stable sourceoffering spin quantumbits with optical readoutHausmann etal [33] and Babinec et al [34] demonstrated a single-photonsource composed of a NV center in a diamond nanowire onthe (100) crystal plane (Figure 11) which produces ten timesgreater flux than bulk diamond devices while using ten timesless power The diamond nanowires were fabricated from amask patterned diamond crystal by RIE with oxygen plasmaThis result as well as that for SiV enhancement [27] enablesa new class of devices for photonic and quantum informationprocessing based on nanostructured diamond and could havea broader impact in nanoelectromechanical systems (NEMS)sensing and scanning probe microscopy

For further investigating the advanced single-photonproperties of NV center Jiang et al [35] developed an over-lay patterning method for fast designable and control-lable fabrication of various three-dimensional (3D) diamondmicronanostructures on (100) plane with focused-ion-beam(FIB) milling Diamond solid immersion lens and nanopillarwith NV center placed at the designed location could enableefficient single-photon collection by overcoming the totalinternal reflection at the diamondair interfaceThe enhance-ments of about tenfold of the single photons collectionrate well-reserved long electron spin dephasing time andsingle-photon emission properties have been obtained In2014 Neu et al [36] fabricated nanophotonic structuresof diamond nanopillars on (111)-oriented single-crystallineCVD diamond The authors demonstrated that this crystalorientation offers optimal coupling of NV center emissionto the nanopillar mode and might thus be advantageousover previous approaches with (100) crystal orientation Highsaturated fluorescence count rates around 106 counts persecond were realized based on these nanopillars

Combining procedures of carbon ion implantation pho-tolithography and electron beam lithography andRIE Liao etal [37] designed and fabricated the suspended single-crystal

diamond nanowires with well-controlled dimensions inbatches for NEMS (Figure 12) All-single-crystal diamondNEM switches were demonstrated using these nanowireswith high reproducibility high controllability repeatedswitching and no stiction Diamond switches not onlyovercome the stiction and abrasion problems in existingelectromechanical switches but also circumvent the shallowdoping problem The concept and technology in this workwould be helpful for promoting the rapid developments of thenext generation of high performance NEMS

4 Diamond-Related Nanoheterojunction

Combining oxide or nitride semiconductors with diamondsubstrates attracts great attention mainly motivated by thelack of efficient p-type doping in the oxides (nitrides) andn-type doping in diamond respectively The complementaryconfiguration of these wide band gap materials with p-typeboron-doped diamond and n-type oxides (ZnO TiO

2) and

n-type nitrides (GaN AlN) has been most widely studiedrecently [10ndash13 38ndash53] Generally growth of oxides andnitrides films on diamond remains challenging due to thehigh difference in the thermal expansion coefficients andlarge lattice mismatch (leading to structural imperfections)and relatively less efficient performance of devices Comparedwith continuous bulk films the low-dimensional structures(eg nanorods nanowires and nanotubes) with a high ratioof surface to volume defect-free and enhanced quantumeffect are expected to yield much better structural qualityand do not suffer from thermal mismatch on diamondconsequently improving the performances of the hybridizedstructural devices In this part we focus on three structuresof ZnOdiamond TiO

2diamond and GaNdiamond where

the oxides and nitrides are of nanosized featureZnO is an important semiconductor having unique

properties of wide direct wide band gap (337 eV) and large


Drain

Drain

DrainGate

Gate

Gate

Source

Source

Source

10minus7

10minus9

10minus11

10minus13

10minus15

Dra

in cu

rren

t (A

)

Dra

in cu

rren

t (A

)

Curr

ent (

A)

Gate voltage (V)Gate voltage (V)

10minus8

10minus9

10minus10

10minus11

10minus12

10minus13

Drain voltage = 10V

10minus10

10minus11

10minus12

10minus13

10minus140 50 100 150 200

Time (s)minus80 minus60 minus40 minus20 0 minus80 minus40 0 40 80

1st2nd3rd

(a)

(b) (c)

(d) (e) (f)

5120583m

2120583m

Figure 12 (a) Optical image of all-single-crystal diamond 3T-NEM switch in ON state The dimensions of the cantilever are 14 120583m in lengthand 400 nm in widthThe gate-source gap is 400 nm (b) Schematic diagram of the switch (c) SEM image of the switch viewed at a titled angleof 20∘ (d) Repeated and hysteresis switching behavior of the device controlled by the gate voltage (e) Gate voltage-drain current dependenceof a similar switch (f) Time dependence of the switch at a gate voltage of 75V and a drain voltage of 5V [37]

exciton binding energy (60meV) at room temperature Thecombined structures of diamond and ZnO have been paidmore attention to fabricate semiconductor heterojunctions[52] Previously the existing form of ZnO was generallyperformed as film deposited on diamondwafer [53] In recentdecade ZnO-related nanostructures and the correspondingnanooptoelectronic devices have been extensively studied[54]The heterojunctions based on ZnO nanostructures weregenerally grown on silicon [55] GaN [56] sapphire [57] anddiamond [11 39 41] Experimentally the performances of thediamond-related biosensor electrodes have been significantlyimproved by modifying ZnO nanorods (NRs) (Figure 13)synthesized using the sol-gel method [10] Lirsquos group reportedthe growth of ZnO NRs on CVD diamond by thermal vaportransport [11 38ndash40] and hydrothermal methods [41]Using the former method in the initial growth status thesemispherical ZnO nuclei were preferably deposited nearthe growth steps on the terraces and the boundaries ofdiamond grains With increasing the growth time the [0001]orientated ZnO nanorods with large aspect ratio appearedand further covered the whole diamond film as shownin Figure 14 Furthermore the epitaxial relation betweenthe (0001) ZnO and (111) diamond is proposed following

(0001)[1120] ZnO(111)[110] diamond or (0001)[1010]ZnO(111)[110] diamond [39 42] while the relationbetween the (0001) ZnO and (100) diamond is mainly of(0001)[0001] ZnO(101)[101] diamond [39]

As doped andor unintentionally doped ZnO is generallyn-type semiconductor and p-type diamond is easy to berealized by boron doping the hybrid n-ZnONRsp-diamondheterojunctions have been constructed [11 39] For a n-ZnO NRsp-diamond heterojunction with degenerated p-type diamond (heavily B-doped diamond having a highercarrier concentration at 1020cm3 order of magnitude) espe-cially a negative differential resistance (NDR) phenomenonwas evidently presented in the corresponding 119868-119881 plot(Figure 15) which can be attributed to the tunneling cur-rent in the structure [39] Since both diamond and ZnOare important high-temperature semiconductor materialsthe temperature-dependent electrical properties of the n-ZnO NRsp-diamond heterojunctions were studied and thecorresponding parameters varied at different temperatures[11] At relatively high temperature the ohmic behavior andthe carrier injection has been improved And at highervoltages the injected current of the heterojunction followsthe trap-free space-charge-limited current (SCLC) law with


(a) (b)

(c) (d)

Figure 13 SEM images of (a) the ZnO nanorod microarrays on boron-doped nanodiamond thin film surfaces (the inset shows the enlargedimage of a square-shaped ZnOnanorod array) (b) top view of ZnOnanorod arrays and (c) tilt view of ZnOnanorod arrays and (d) functionalZnO nanorod arrays [10]

the exponent close to 2 because the traps states will be filledby larger thermally activated carriersThese results emphasizethe suitability for fabricating n-ZnOp-diamond-based highfrequency high power and high temperature optoelectronicnanodevices

Another important metal oxide of TiO2has attracted

considerable attention because it is especially suitable forapplications in the fields of photocatalytic degradation ofpollutants hydrogen generation from photoelectrocatalyticwater splitting dye-sensitized solar cells and so forth [58]The applications of TiO

2as photocatalysts are encumbered

to a certain extent by the relatively low quantum yieldthat is normally caused due to rapid recombination ofphotogenerated electrons and holes In order to enhancethe quantum yield a heterojunction structure has beenfurther introduced because the heterojunction could providea potential driving force (the internal electrostatic potentialin the space charge region) to reduce the recombinationof photogenerated charge carriers Highly efficient photo-catalysts have been realized by n-type anatase TiO

2film

joined to CVD p-type boron-doped diamond (BDD) [4344] which has unique properties of wide electrochemicalpotential window long-term response stability high levelof mechanical strength and chemical corrosion resistanceCompared with continuous TiO

2films low-dimensional

TiO2structures (eg nanotubes nanorods) which possess

a high ratio of surface to volume and provide a convenientway for photogenerated carriers to transfer to the reactionsurfaces lead to improved photocatalytic efficiency [45

46] In [47 48] TiO2

nanoparticles (nanotubes) havebeen deposited on BDD film by a spin coating methodfor applications in electrochemical reactivity (electro- andbioelectrocatalysis) By a liquid phase deposition (LPD)method using a ZnO nanorod template the vertical anataseTiO2nanotube (TiNT) arrays were directly grown on a

CVD BDD film and the fabricated n-type TiNTp-typeBDD (n-TiNTp-BDD) heterojunctions showed highly effi-cient photocatalytic activities for the decomposition of azodye CI reactive yellow 15 (RY15) [12] The increased abil-ity to separate photogenerated charge carriers by the pnjunction (n-TiNTp-BDD) would enhance the photocat-alytic activity Additionally the TiNT array structure pro-vides more active positions for the photocatalytic processesexposed to UV light and the loose TiNTs are favorablefor permitting more UV light to reach the BDD sidethrough TiNTs with respect to the case of TiO

2film on

BDDIn 2015 different to depositing TiO

2on diamond Siuzdak

et al [49] reported on novel composite nanostructure of thinBDD films (thickness of sim200ndash500 nm) grown on top of as-fabricated TiO

2nanotubes (Figure 16) The nanostructures

made of BDD-modified TiO2nanotubes showed an increase

in activity and performance when used as electrodes in elec-trochemical environments The substantial improvement ofelectrochemical performance and the excellent rate capabilitycould be attributed to the synergistic effect of TiO

2treatment

in CH4H2plasma and the high electrical conductivity of

BDD layers


50120583m 1120583m

(a)

1120583m

10120583m

(b)

1120583m

10120583m

(c)

1120583m

10120583m

(d)

Figure 14 SEM images of ZnO nanostructures synthesized on microcrystalline diamond films for 05min (a) 2min (b) and 5min ((c) and(d)) The inset of (a) is the image of birdrsquos-eye view The insets of (b)ndash(d) are the high-magnitude images of ZnO NRs [40]

40

20

0

minus20

minus40minus6 minus4 minus2 0 2 4 6 8

Curr

ent (120583A

)

(a)

p-diamond

p-diamond

Si-substrate

Voltage (V)

ITOZnO NRs

vac

CBEd

VB n-ZnO

ΔEC

ΔEVEF

Y1

Ag

120594ZnO

120594Dia

Figure 15 119868-119881 characteristic of the n-ZnO NRp-diamond het-erojunction constructed with degenerated p-diamond showing anegative differential resistance phenomenon The insets are theschematic diagram of the pn heterojunction (upper left) and theenergy band diagram of the heterojunction at thermal equilibrium(lower right) [39]

In recent years the field of GaN-based nanowires (NWs)has made substantial progress as a possible alternative toplanar structures for light-emitting diodes laser diodes

sensing applications photovoltaics and catalysis Schuster etal [13 50 51] reported on the fabrication characterizationand properties of the low-dimensional GaN structures ondiamond which provide important information for realizinghigh performance optoelectronic nanodevices in the UV-spectral range and the electrical control of NV centersin diamond By plasma-assisted molecular beam epitaxythe self-assembled epitaxial GaN NWs with an excellentcrystalline quality were vertically grown catalyst-free on(111) single crystal diamond (Figure 17) A strong and sharpexcitonic emission in the PL spectrum reveals excellentoptical properties superior to state-of-the-art GaN NWs onsilicon substrates [13] The position-controlled growth ofGaNNWs on diamond substrates with the help of structuredtitanium masks was demonstrated and a transition from ananowire toward a nanotube growth mode was observed[50] The controlled fabrication of GaN nanotube arrays willbe of interest for applications benefiting from a high surface-to-volume ratio Furthermore the authors addressed the dif-ferent aspects of GaN nanowire doping (Si and Mg) [51] TheGaN NWs density and strains state distributions of dopantconcentration and charge carriers and optical propertiesrelated to the doping in NWs have been investigated Theresults help to understand and control the mechanisms ofdoping in GaN nanostructures on diamond to intention-ally tailor their electric and optical properties for devicefabrication


Ti plateAnodization

process

TiO2 nanotubes

MW CVD

BDD on TiO2

nanotubes

Figure 16 Formation scheme of composite TiO2nanotubeboron-doped diamond (BDD) electrodes [49]

30 32 34 36

Nan

owire

sN

anot

ubes

Figure 17 From left to right cross-section high-angle annular dark-field STEM of an exemplary GaNNWon diamond substrate tilted-viewSEM images of as-grown GaN NWs on diamond (top) HRTEM image of the interface region (bottom) temperature-dependent PL spectraof GaNNWs on diamond with typical NBE shift due to band gap shrinkage [13] selective area grown GaNNW arrays without (top) and witha hole (bottom) [50]

5 Conclusion and Outlook

In this review we gave a very recent overview of diamond-related nanostructures especially including the three typesdeveloped in the current decadeThe atomically thick 2D few-layer diamond nanofilms with and without varying surfacefunctionalization have been theoretically predicted and thecorresponding optimized structures and the electronic andmagnetic properties are calculated showing differences fromthat of bulk diamond The challenge of those 2D nanofilmsis to find a feasible route to experimentally realize in largesizes (eg more than tens and hundreds of micrometers)for practical application Some possible approaches havebeen mentioned in the text As for the nanostructuralsurface of diamond films which are generally obtainedby top-down approach following various etching processes(with designed mask patterns) great achievements havebeenmade in plasmonic enhancement single-photon sourceelectron field emission and biologic sensing for the potentialapplications The technologies of feasibility low cost largescale high accurate controllability and novel structuresare quite desirable to be developed to meet the growingdemand The heterostructures combined of nanosized n-type oxides (nitrides) and bulk p-type diamond have beenexperimentally fabricated to overcome the lattice mismatchlack of efficient p-type doping in the oxides and nitridesand n-type doping in diamond and structural imperfec-tions in the interface region However depositing high

quality and highly orientated nanosized oxides (nitrides) on(100)-oriented diamond which is of high quality grown byCVD process is difficult to be realized due to the largelattice mismatch between the hexagonaltetragonal oxides(nitrides) and the cubic (100) diamond facet Suitable bufferlayer andor optimized growth conditions (eg tempera-ture bias enhanced nucleation andor pretreated substrate)should be provided to achieve the goal In short this reviewreveals the current key issues opportunities and challengesfacing present and future researches on diamond materialwith various nanostructures for advancing in commercialapplications

Conflict of Interests

The authors declare that there is no conflict of interestsregarding the publication of this paper

Acknowledgment

This work was supported by the National Natural ScienceFoundation of China (NSFC) (Grant no 51472105)

References

[1] DMGruen O A Shenderova andA Y Vul Synthesis Proper-ties and Applications of Ultrananocrystalline Diamond vol 192of NATO Science Series Springer Netherlands 2005


[2] K S Novoselov A K Geim S V Morozov et al ldquoElectric fieldeffect in atomically thin carbon filmsrdquo Science vol 306 no5696 pp 666ndash669 2004

[3] L Y Zhu H Hu Q Chen S D Wang J L Wang and F DingldquoFormation and electronic properties of hydrogenated few layergraphenerdquo Nanotechnology vol 22 no 18 Article ID 1852022011

[4] H D Li J Li Z G Wang and G T Zou ldquoLayer number-dependent structural evolution of two-dimensional diamondfilmsrdquo Chemical Physics Letters vol 550 pp 130ndash133 2012

[5] J O Sofo A S Chaudhari and G D Barber ldquoGraphane atwo-dimensional hydrocarbonrdquo Physical Review BmdashCondensedMatter and Materials Physics vol 75 no 15 Article ID 1534012007

[6] L A Chernozatonskii P B Sorokin A G Kvashnin and D GKvashnin ldquoDiamond-like C

2H nanolayer diamane simulation

of the structure and propertiesrdquo JETP Letters vol 90 no 2 pp134ndash138 2009

[7] L S Li and X Zhao ldquoTransformation between differenthybridized bonding structures in two-dimensional diamond-based materialsrdquo The Journal of Physical Chemistry C vol 115no 45 pp 22168ndash22179 2011

[8] H Shiomi ldquoReactive ion etching of diamond in O2and CF

4

plasma and fabrication of porous diamond for field emittercathodesrdquo Japanese Journal of Applied Physics vol 36 no 12pp 7745ndash7748 1997

[9] H Masuda M Watanabe K Yasni D Tryk T Rao and AFujishima ldquoFabrication of a nanoslructured diamond honey-comb filmrdquo Advanced Materials vol 12 no 6 pp 444ndash4472000

[10] JW Zhao D HWu and J F Zhi ldquoA novel tyrosinase biosensorbased on biofunctional ZnO nanorod microarrays on thenanocrystalline diamond electrode for detection of phenoliccompoundsrdquo Bioelectrochemistry vol 75 no 1 pp 44ndash49 2009

[11] D D Sang H D Li S H Cheng Q L Wang Q Yu and YZ Yang ldquoElectrical transport behavior of n-ZnO nanorodsp-diamond heterojunction device at higher temperaturesrdquo Journalof Applied Physics vol 112 no 3 Article ID 036101 2012

[12] J J Yuan H D Li S Y Gao Y H Lin and H Y Li ldquoA facileroute to n-type TiO

2-nanotubep-type boron-doped-diamond

heterojunction for highly efficient photocatalystsrdquo ChemicalCommunications vol 46 no 18 pp 3119ndash3121 2010

[13] F Schuster F Furtmayr R Zamani et al ldquoSelf-assembled GaNnanowires on diamondrdquo Nano Letters vol 12 no 5 pp 2199ndash2204 2012

[14] H W Kroto J R Heath S C OrsquoBrien R F Curl and R ESmalley ldquoC

60 buckminsterfullerenerdquoNature vol 318 no 6042

pp 162ndash163 1985[15] S Iijima ldquoHelicalmicrotubules of graphitic carbonrdquoNature vol

354 no 6348 pp 56ndash58 1991[16] T M Willey C Bostedt T van Buuren et al ldquoMolecular

limits to the quantum confinement model in diamond clustersrdquoPhysical Review Letters vol 95 no 11 Article ID 113401 2005

[17] D C Elias R R Nair T M G Mohiuddin et al ldquoControl ofgraphenersquos properties by reversible hydrogenation evidence forgraphanerdquo Science vol 323 no 5914 pp 610ndash613 2009

[18] J Zhou Q Wang Q Sun X S Chen Y Kawazoe and P JenaldquoFerromagnetism in semihydrogenated graphene sheetrdquo NanoLetters vol 9 no 11 pp 3867ndash3870 2009

[19] L A Chernozatonskii P B Sorokin A A Kuzubov et alldquoInfluence of size effect on the electronic and elastic properties

of diamond films with nanometer thicknessrdquo Journal of PhysicalChemistry C vol 115 no 1 pp 132ndash136 2011

[20] J Li H D Li Z G Wang and G T Zou ldquoStructure magneticand electronic properties of hydrogenated two-dimensionaldiamond filmsrdquo Applied Physics Letters vol 102 no 7 ArticleID 073114 2013

[21] M Fyta ldquoNitrogen-vacancy centers and dopants in ultrathindiamond films electronic structurerdquo Journal of Physical Chem-istry C vol 117 no 41 pp 21376ndash21381 2013

[22] D Odkhuu D Shin R S Ruoff and N Park ldquoConversionof multilayer graphene into continuous ultrathin sp3-bondedcarbon films on metal surfacesrdquo Scientific Reports vol 3 article3276 2013

[23] A G Kvashnin L A Chernozatonskii B I Yakobson and PB Sorokin ldquoPhase diagram of quasi-two-dimensional carbonfromgraphene to diamondrdquoNano Letters vol 14 no 2 pp 676ndash681 2014

[24] L Y Antipina and P B Sorokin ldquoConverting chemically func-tionalized few-layer graphene to diamond films a computa-tional studyrdquo The Journal of Physical Chemistry C vol 119 no5 pp 2828ndash2836 2015

[25] K Honda T N Rao D A Tryk et al ldquoImpedance character-istics of the nanoporous honeycomb diamond electrodes forelectrical double-layer capacitor applicationsrdquo Journal of theElectrochemical Society vol 148 no 7 pp A668ndashA679 2001

[26] Y S Zou Y Yang W J Zhang et al ldquoFabrication of diamondnanopillars and their arraysrdquoApplied Physics Letters vol 92 no5 Article ID 053105 2008

[27] J Song H D Li F Lin L Y Wang H L Wu and Y QYang ldquoPlasmon-enhanced photoluminescence of Si-V centersin diamond from a nanoassembled metal-diamond hybridstructurerdquo CrystEngComm vol 16 no 36 pp 8356ndash8362 2014

[28] J Song S H Cheng H D Li H Y Guo S P Xu and WQ Xu ldquoA novel surface-enhanced Raman scattering substratediamond nanopit infilled with gold nanoparticlerdquo MaterialsLetters vol 135 pp 214ndash217 2014

[29] J Song H D Li S H Cheng and Q L Wang ldquoFabricationof a hybrid structure of diamond nanopits infilled with a goldnanoparticlerdquo RSC Advances vol 4 no 60 pp 32000ndash320032014

[30] N J Yang H Uetsuka E Osawa and C E Nebel ldquoVerticallyaligned nanowires from boron-doped diamondrdquo Nano Lettersvol 8 no 11 pp 3573ndash3576 2008

[31] N J Yang H Uetsuka and C E Nebel ldquoBiofunctionalizationof vertically aligned diamond nanowiresrdquo Advanced FunctionalMaterials vol 19 no 6 pp 887ndash893 2009

[32] C Lu Y L Li S B Tian W X Li J J Li and C Z GuldquoEnhanced gas-sensing by diamond nanoneedle arrays formedby reactive ion etchingrdquoMicroelectronic Engineering vol 88 no8 pp 2319ndash2321 2011

[33] B J M Hausmann M Khan Y Zhang et al ldquoFabricationof diamond nanowires for quantum information processingapplicationsrdquo Diamond amp Related Materials vol 19 no 5-6 pp621ndash629 2010

[34] T M Babinec B J M Hausmann M Khan et al ldquoA diamondnanowire single-photon sourcerdquo Nature Nanotechnology vol 5no 3 pp 195ndash199 2010

[35] Q Q Jiang D Q Liu G Q Liu et al ldquoFocused-ion-beamoverlay-patterning of three-dimensional diamond structuresfor advanced single-photon propertiesrdquo Journal of AppliedPhysics vol 116 no 4 Article ID 044308 2014


[36] E Neu P Appel M Ganzhorn et al ldquoPhotonic nano-structureson (111)-oriented diamondrdquoApplied Physics Letters vol 104 no15 Article ID 153108 2014

[37] M Y Liao S Hishita E Watanabe S Koizumi and YKoide ldquoSuspended single-crystal diamond nanowires forhigh-performance nanoelectromechanical switchesrdquo AdvancedMaterials vol 22 no 47 pp 5393ndash5397 2010

[38] H D Li H Lu D D Sang et al ldquoSynthesizing of ZnO micronanostructures at low temperature with new reducing agentsrdquoChinese Physics Letters vol 25 no 10 pp 3794ndash3797 2008

[39] H D Li D D Sang S H Cheng et al ldquoEpitaxial growth ofZnO nanorods on diamond and negative differential resistanceof n-ZnOnanorodp-diamond heterojunctionrdquoApplied SurfaceScience vol 280 pp 201ndash206 2013

[40] DD SangHD Li and SHCheng ldquoGrowth and electron fieldemission of ZnO nanorods on diamond filmsrdquo Applied SurfaceScience vol 258 no 1 pp 333ndash336 2011

[41] Q Yu J Li H D Li Q L Wang S H Cheng and L L LildquoFabrication structure and photocatalytic activities of boron-doped ZnOnanorods hydrothermally grown onCVDdiamondfilmrdquo Chemical Physics Letters vol 539-540 pp 74ndash78 2012

[42] A Hachigo H Nakahata K Higaki S Fujii and S-I ShikataldquoHeteroepitaxial growth of ZnO films on diamond (111) planeby magnetron sputteringrdquo Applied Physics Letters vol 65 no20 pp 2556ndash2558 1994

[43] H B Yu S Chen X Quan H M Zhao and Y B ZhangldquoFabrication of a TiO

2-BDD heterojunction and its application

as a photocatalyst for the simultaneous oxidation of an azodye and reduction of Cr(VI)rdquo Environmental Science andTechnology vol 42 no 10 pp 3791ndash3796 2008

[44] J H Qu and X Zhao ldquoDesign of BDD-TiO2hybrid electrode

with P-N function for photoelectroatalytic degradation oforganic contaminantsrdquo Environmental Science and Technologyvol 42 no 13 pp 4934ndash4939 2008

[45] Y S Chen J C Crittenden S Hackney L Sutter and DW Hand ldquoPreparation of a novel TiO

2-based pndashn junction

nanotube photocatalystrdquo Environmental Science amp Technologyvol 39 no 5 pp 1201ndash1208 2005

[46] H G Kim P H Borse W Choi and J S Lee ldquoPhotocat-alytic nanodiodes for visible-light photocatalysisrdquo AngewandteChemiemdashInternational Edition vol 44 no 29 pp 4585ndash45892005

[47] F Marken A S Bhambra D-H Kim R J Mortimer andS J Stott ldquoElectrochemical reactivity of TiO

2nanoparticles

adsorbed onto boron-doped diamond surfacesrdquo Electrochem-istry Communications vol 6 no 11 pp 1153ndash1158 2004

[48] D V Bavykin E V Milsom F Marken et al ldquoA novel cation-binding TiO

2nanotube substrate for electro- and bioelectro-

catalysisrdquo Electrochemistry Communications vol 7 no 10 pp1050ndash1058 2005

[49] K Siuzdak R Bogdanowicz M Sawczak and M SobaszekldquoEnhanced capacitance of composite TiO

2nanotubeboron-

doped diamond electrodes studied by impedance spectroscopyrdquoNanoscale vol 7 no 2 pp 551ndash558 2015

[50] F Schuster M Hetzl S Weiszer et al ldquoPosition-controlledgrowth of GaN nanowires and nanotubes on diamond bymolecular beam epitaxyrdquo Nano Letters vol 15 no 3 pp 1773ndash1779 2015

[51] F Schuster A Winnerl S Weiszer M Hetzl J A Garrido andM Stutzmann ldquoDoped GaN nanowires on diamond structuralproperties and charge carrier distributionrdquo Journal of AppliedPhysics vol 117 no 4 Article ID 044307 2015

[52] U Ozgur Y I Alivov C Liu et al ldquoA comprehensive review ofZnO materials and devicesrdquo Journal of Applied Physics vol 98no 4 Article ID 041301 2005

[53] C X Wang G W Yang T C Zhang et al ldquoFabrication oftransparent p-n hetero-junction diodes by p-diamond film andn-ZnO filmrdquo Diamond and Related Materials vol 12 no 9 pp1548ndash1552 2003

[54] A B Djuriic A M C Ng and X Y Chen ldquoZnO nanos-tructures for optoelectronics material properties and deviceapplicationsrdquo Progress in Quantum Electronics vol 34 no 4 pp191ndash259 2010

[55] N K Reddy Q Ahsanulhaq J H Kim and Y B HahnldquoBehavior of n-ZnO nanorodsp-Si heterojunction devices athigher temperaturesrdquo Applied Physics Letters vol 92 no 4Article ID 043127 2008

[56] X-M Zhang M-Y Lu Y Zhang L-J Chen and Z L WangldquoFabrication of a high-brightness blue-light-emitting diodeusing a ZnO-Nanowire array grown on p-GaN thin filmrdquoAdvanced Materials vol 21 no 27 pp 2767ndash2770 2009

[57] J B Baxter and E S Aydil ldquoEpitaxial growth of ZnO nanowireson a- and c-plane sapphirerdquo Journal of Crystal Growth vol 274no 3-4 pp 407ndash411 2005

[58] T Ochiai and A Fujishima ldquoPhotoelectrochemical propertiesof TiO

2photocatalyst and its applications for environmental

purificationrdquo Journal of Photochemistry and Photobiology CPhotochemistry Reviews vol 13 no 4 pp 247ndash262 2012

Submit your manuscripts athttpwwwhindawicom

ScientificaHindawi Publishing Corporationhttpwwwhindawicom Volume 2014

CorrosionInternational Journal of

Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014

Polymer ScienceInternational Journal of



CeramicsJournal of


CompositesJournal of

NanoparticlesJournal of



International Journal of

Biomaterials


NanoscienceJournal of

TextilesHindawi Publishing Corporation httpwwwhindawicom Volume 2014

Journal of

NanotechnologyHindawi Publishing Corporationhttpwwwhindawicom Volume 2014

Journal of

CrystallographyJournal of


The Scientific World JournalHindawi Publishing Corporation httpwwwhindawicom Volume 2014


CoatingsJournal of

Advances in

Materials Science and EngineeringHindawi Publishing Corporationhttpwwwhindawicom Volume 2014

Smart Materials Research



MetallurgyJournal of


BioMed Research International

MaterialsJournal of


Nano

materials


Journal ofNanomaterials


(a)

(b)

AB AA

(c)

ABC AAA AAC

(d)

Figure 1 Atomic geometry of the studied two-dimensional (2D) carbon nanofilms (a) graphene (b) graphane (c) diamane of two layersand (d) diamane of three layers Carbon (hydrogen) atoms are marked with yellow (blue) For each diamane possible stacking sequences ofcarbon layers are presented on the right side [19]

carbon) various new nanostructures (such as fullerene [14]carbon nanotubes [15] graphene [2] and diamond clusters[16]) have appeared in the family of carbon In 2007 fullhydrogenation on both sides of graphene (with CxHx)referred to as ldquographanerdquo was theoretically predicted [5]and this configuration with buckling feature is similar tothat of hydrogenated diamond (111) planes Chernozatonskiiet al considered a C

2H nanostructure [6] based on bilayer

graphene to constitute a 2D hydrogenated ⟨111⟩ diamondfilm with a thickness of less than 1 nm which is called ldquodia-manerdquo It was theatrically demonstrated that C

2H diamane is

more stable thanCHgraphane Both hydrogenated diamond-like films (graphane and diamane) have relatively wide bandgaps narrower than that of bulk diamond within 1 eV [5 1718] These early works open up a new research area of lowdimensional diamond Figure 1 shows the atomic geometryof the 2D carbon nanofilms [19]The authors summarized thecalculated formation energy and band gap width of differenthydrocarbon structures as a function of hydrogen content

Zhu et al investigated the layer number (n) dependentformation and electronic properties of hydrogenated 2Ddiamond nanofilms originated from few-layer graphene [3]The band gap monotonically decreases with the increasingthickness (ie 119899) reflecting a quantum confinement effect(Figure 2(a)) Due to the presence of hydrogen passivatedsurface the tunable gaps are localized in a region lower thanthat of bulk diamond Based on building blocks ofC

35andC

84

with octahedral morphology Li and Zhao [7] described thestructurally optimized few-layer (six-layer) 2D diamond-related nanostructure (nanoflake) having a diamond matrixcovered with graphite fragments As shown in Figure 3 thetwo outmost layers were delaminated and partially graphi-tized having a nonsymmetrical reconstruction It revealedthat the stability of these 2D diamond nanofilms generallyrequires termination with functional groups or reconstruc-tive sp2-carbon surface

Different from the previous first-principles calculationsbased on few-layer graphene and building blocks of carbonclusters Li et al [4] performed n-dependent structuraloptimization of 2D diamond nanofilms (Figure 4) beginningfrom the original diamond (111) layers without terminationof foreign atoms cleaved from bulk cubic diamond withsingle-dangling-bond surface At 119899 le 5 the films arerelaxed into a few graphene layers whereas for 6 le 119899 le11 a gradient-graphite-diamond-like (GGDL) structure withgradient changes of interplanar spacing and buckling featureis predicted A threshold 119899 = 12 is determined to realize thethinnest two-dimensional (111)-oriented diamond film For119899 ge 12 the diamond phase is energetically stabilized Theeffects of semihydrogenation (SH) and full hydrogenation(FH) on the structural evolution and properties of 2D dia-mond nanofilms were further investigated [20] Both of thehydrogenation processes play an important role in stabilizingthe 2D diamond structures Interestingly for the SH cases


42

36

30

24

1 2 3 4 5

Band

gap

(eV

)

n

(a)

Band

gap

(eV

)

n

12

11

10

09

08

07

0 2 4 6 8 10

(b)


(a) (b)








Structure 119903(12)119887119903(13)

119887119903(14)

119887119903(15)

119887119903(CH)119887119864119892Δ1198641198921198640119892





(a)

(b)

(c) (d)

(a998400) (b998400)

(c998400) (d998400)

Δm

Δm+1

Lm

dm

dm



2



119911




2 F F2 H2O andNH

3as






i = 6

i = 5

i = 4

i = 3

i = 2

i = 1

All-layer

Den

sity

of st

ates

(DO

S a

u)


2213

1660

1106

5532 times 10minus1



(I)

312Aring


(a)

(II)

308Aring


(b)

(III)

158Aring


(c)

0

minus20

minus40

minus60

Relat

ive e

nerg

y (k

calm

ol)


(I)

(II)

(III)81 kcalmol

TSZigzag-like (II)

Boat-like (II)

Chair-like (II III)

(d)








(a) (b)

120

80

40

00

105Ω

cm2 )

00 40 80105 Ω cm2)

103Ω

cm2 )

103 Ω cm2)

90

60

30

0000 30 60

0000

0025

0050

010105 Hz

0010

00250050

010

105 Hz

minusIm

Z(

minusIm

Z(

Re Z (Re Z (

(c)





(a) (b)

(c) (d)


140

120

100

80

60

40

20

0

Cros

s sec

tion

(nm

2 times10

minus16 )

400 500 600 700 800 900Wavelength (nm)

15

12

09

06

minus400

minus200 0

200

400

X (nm)

24201612080400

Z(n

m)

120576 = 10120576 = 576

(b) times103

1120583m

(a)





d

a


Plasma Plasma

(a)

10

0100

8060

4020

00

20

40

60

80

100

(nm

)

(nm

)

(b)

15

1

05

0

03 06 09

Curr

ent (120583A

)

(A)

(B)

(C)


(c)


6








2) gases Due to the




NV

C

(a) (b)

(c)

(d) (e)








2) and






Drain

Drain

DrainGate

Gate

Gate

Source

Source

Source

10minus7

10minus9

10minus11

10minus13

10minus15

Dra

in cu

rren

t (A

)

Dra

in cu

rren

t (A

)

Curr

ent (

A)


10minus8

10minus9

10minus10

10minus11

10minus12

10minus13

Drain voltage = 10V

10minus10

10minus11

10minus12

10minus13

10minus140 50 100 150 200


1st2nd3rd

(a)

(b) (c)

(d) (e) (f)

5120583m

2120583m






(a) (b)

(c) (d)







2film





46] In [47 48] TiO2



2film on


2on diamond Siuzdak





2treatment


BDD layers


50120583m 1120583m

(a)

1120583m

10120583m

(b)

1120583m

10120583m

(c)

1120583m

10120583m

(d)


40

20

0

minus20


Curr

ent (120583A

)

(a)

p-diamond

p-diamond

Si-substrate

Voltage (V)

ITOZnO NRs

vac

CBEd

VB n-ZnO

ΔEC

ΔEVEF

Y1

Ag

120594ZnO

120594Dia





Ti plateAnodization

process

TiO2 nanotubes

MW CVD

BDD on TiO2

nanotubes


30 32 34 36

Nan

owire

sN

anot

ubes







Acknowledgment


References












4




















































2nanoparticles






2nanotubeboron-




















CeramicsJournal of







Biomaterials




Journal of


Journal of





CoatingsJournal of

Advances in








MaterialsJournal of


Nano

materials




42

36

30

24

1 2 3 4 5

Band

gap

(eV

)

n

(a)

Band

gap

(eV

)

n

12

11

10

09

08

07

0 2 4 6 8 10

(b)


(a) (b)








Structure 119903(12)119887119903(13)

119887119903(14)

119887119903(15)

119887119903(CH)119887119864119892Δ1198641198921198640119892





(a)

(b)

(c) (d)

(a998400) (b998400)

(c998400) (d998400)

Δm

Δm+1

Lm

dm

dm



2



119911




2 F F2 H2O andNH

3as






i = 6

i = 5

i = 4

i = 3

i = 2

i = 1

All-layer

Den

sity

of st

ates

(DO

S a

u)


2213

1660

1106

5532 times 10minus1



(I)

312Aring


(a)

(II)

308Aring


(b)

(III)

158Aring


(c)

0

minus20

minus40

minus60

Relat

ive e

nerg

y (k

calm

ol)


(I)

(II)

(III)81 kcalmol

TSZigzag-like (II)

Boat-like (II)

Chair-like (II III)

(d)








(a) (b)

120

80

40

00

105Ω

cm2 )

00 40 80105 Ω cm2)

103Ω

cm2 )

103 Ω cm2)

90

60

30

0000 30 60

0000

0025

0050

010105 Hz

0010

00250050

010

105 Hz

minusIm

Z(

minusIm

Z(

Re Z (Re Z (

(c)





(a) (b)

(c) (d)


140

120

100

80

60

40

20

0

Cros

s sec

tion

(nm

2 times10

minus16 )

400 500 600 700 800 900Wavelength (nm)

15

12

09

06

minus400

minus200 0

200

400

X (nm)

24201612080400

Z(n

m)

120576 = 10120576 = 576

(b) times103

1120583m

(a)





d

a


Plasma Plasma

(a)

10

0100

8060

4020

00

20

40

60

80

100

(nm

)

(nm

)

(b)

15

1

05

0

03 06 09

Curr

ent (120583A

)

(A)

(B)

(C)


(c)


6








2) gases Due to the




NV

C

(a) (b)

(c)

(d) (e)








2) and






Drain

Drain

DrainGate

Gate

Gate

Source

Source

Source

10minus7

10minus9

10minus11

10minus13

10minus15

Dra

in cu

rren

t (A

)

Dra

in cu

rren

t (A

)

Curr

ent (

A)


10minus8

10minus9

10minus10

10minus11

10minus12

10minus13

Drain voltage = 10V

10minus10

10minus11

10minus12

10minus13

10minus140 50 100 150 200


1st2nd3rd

(a)

(b) (c)

(d) (e) (f)

5120583m

2120583m






(a) (b)

(c) (d)







2film





46] In [47 48] TiO2



2film on


2on diamond Siuzdak





2treatment


BDD layers


50120583m 1120583m

(a)

1120583m

10120583m

(b)

1120583m

10120583m

(c)

1120583m

10120583m

(d)


40

20

0

minus20


Curr

ent (120583A

)

(a)

p-diamond

p-diamond

Si-substrate

Voltage (V)

ITOZnO NRs

vac

CBEd

VB n-ZnO

ΔEC

ΔEVEF

Y1

Ag

120594ZnO

120594Dia





Ti plateAnodization

process

TiO2 nanotubes

MW CVD

BDD on TiO2

nanotubes


30 32 34 36

Nan

owire

sN

anot

ubes







Acknowledgment


References












4




















































2nanoparticles






2nanotubeboron-




















CeramicsJournal of







Biomaterials




Journal of


Journal of





CoatingsJournal of

Advances in








MaterialsJournal of


Nano

materials




(a)

(b)

(c) (d)

(a998400) (b998400)

(c998400) (d998400)

Δm

Δm+1

Lm

dm

dm



2



119911




2 F F2 H2O andNH

3as






i = 6

i = 5

i = 4

i = 3

i = 2

i = 1

All-layer

Den

sity

of st

ates

(DO

S a

u)


2213

1660

1106

5532 times 10minus1



(I)

312Aring


(a)

(II)

308Aring


(b)

(III)

158Aring


(c)

0

minus20

minus40

minus60

Relat

ive e

nerg

y (k

calm

ol)


(I)

(II)

(III)81 kcalmol

TSZigzag-like (II)

Boat-like (II)

Chair-like (II III)

(d)








(a) (b)

120

80

40

00

105Ω

cm2 )

00 40 80105 Ω cm2)

103Ω

cm2 )

103 Ω cm2)

90

60

30

0000 30 60

0000

0025

0050

010105 Hz

0010

00250050

010

105 Hz

minusIm

Z(

minusIm

Z(

Re Z (Re Z (

(c)





(a) (b)

(c) (d)


140

120

100

80

60

40

20

0

Cros

s sec

tion

(nm

2 times10

minus16 )

400 500 600 700 800 900Wavelength (nm)

15

12

09

06

minus400

minus200 0

200

400

X (nm)

24201612080400

Z(n

m)

120576 = 10120576 = 576

(b) times103

1120583m

(a)





d

a


Plasma Plasma

(a)

10

0100

8060

4020

00

20

40

60

80

100

(nm

)

(nm

)

(b)

15

1

05

0

03 06 09

Curr

ent (120583A

)

(A)

(B)

(C)


(c)


6








2) gases Due to the




NV

C

(a) (b)

(c)

(d) (e)








2) and






Drain

Drain

DrainGate

Gate

Gate

Source

Source

Source

10minus7

10minus9

10minus11

10minus13

10minus15

Dra

in cu

rren

t (A

)

Dra

in cu

rren

t (A

)

Curr

ent (

A)


10minus8

10minus9

10minus10

10minus11

10minus12

10minus13

Drain voltage = 10V

10minus10

10minus11

10minus12

10minus13

10minus140 50 100 150 200


1st2nd3rd

(a)

(b) (c)

(d) (e) (f)

5120583m

2120583m






(a) (b)

(c) (d)







2film





46] In [47 48] TiO2



2film on


2on diamond Siuzdak





2treatment


BDD layers


50120583m 1120583m

(a)

1120583m

10120583m

(b)

1120583m

10120583m

(c)

1120583m

10120583m

(d)


40

20

0

minus20


Curr

ent (120583A

)

(a)

p-diamond

p-diamond

Si-substrate

Voltage (V)

ITOZnO NRs

vac

CBEd

VB n-ZnO

ΔEC

ΔEVEF

Y1

Ag

120594ZnO

120594Dia





Ti plateAnodization

process

TiO2 nanotubes

MW CVD

BDD on TiO2

nanotubes


30 32 34 36

Nan

owire

sN

anot

ubes







Acknowledgment


References












4




















































2nanoparticles






2nanotubeboron-




















CeramicsJournal of







Biomaterials




Journal of


Journal of





CoatingsJournal of

Advances in








MaterialsJournal of


Nano

materials




i = 6

i = 5

i = 4

i = 3

i = 2

i = 1

All-layer

Den

sity

of st

ates

(DO

S a

u)


2213

1660

1106

5532 times 10minus1



(I)

312Aring


(a)

(II)

308Aring


(b)

(III)

158Aring


(c)

0

minus20

minus40

minus60

Relat

ive e

nerg

y (k

calm

ol)


(I)

(II)

(III)81 kcalmol

TSZigzag-like (II)

Boat-like (II)

Chair-like (II III)

(d)








(a) (b)

120

80

40

00

105Ω

cm2 )

00 40 80105 Ω cm2)

103Ω

cm2 )

103 Ω cm2)

90

60

30

0000 30 60

0000

0025

0050

010105 Hz

0010

00250050

010

105 Hz

minusIm

Z(

minusIm

Z(

Re Z (Re Z (

(c)





(a) (b)

(c) (d)


140

120

100

80

60

40

20

0

Cros

s sec

tion

(nm

2 times10

minus16 )

400 500 600 700 800 900Wavelength (nm)

15

12

09

06

minus400

minus200 0

200

400

X (nm)

24201612080400

Z(n

m)

120576 = 10120576 = 576

(b) times103

1120583m

(a)





d

a


Plasma Plasma

(a)

10

0100

8060

4020

00

20

40

60

80

100

(nm

)

(nm

)

(b)

15

1

05

0

03 06 09

Curr

ent (120583A

)

(A)

(B)

(C)


(c)


6








2) gases Due to the




NV

C

(a) (b)

(c)

(d) (e)








2) and






Drain

Drain

DrainGate

Gate

Gate

Source

Source

Source

10minus7

10minus9

10minus11

10minus13

10minus15

Dra

in cu

rren

t (A

)

Dra

in cu

rren

t (A

)

Curr

ent (

A)


10minus8

10minus9

10minus10

10minus11

10minus12

10minus13

Drain voltage = 10V

10minus10

10minus11

10minus12

10minus13

10minus140 50 100 150 200


1st2nd3rd

(a)

(b) (c)

(d) (e) (f)

5120583m

2120583m






(a) (b)

(c) (d)







2film





46] In [47 48] TiO2



2film on


2on diamond Siuzdak





2treatment


BDD layers


50120583m 1120583m

(a)

1120583m

10120583m

(b)

1120583m

10120583m

(c)

1120583m

10120583m

(d)


40

20

0

minus20


Curr

ent (120583A

)

(a)

p-diamond

p-diamond

Si-substrate

Voltage (V)

ITOZnO NRs

vac

CBEd

VB n-ZnO

ΔEC

ΔEVEF

Y1

Ag

120594ZnO

120594Dia





Ti plateAnodization

process

TiO2 nanotubes

MW CVD

BDD on TiO2

nanotubes


30 32 34 36

Nan

owire

sN

anot

ubes







Acknowledgment


References












4




















































2nanoparticles






2nanotubeboron-




















CeramicsJournal of







Biomaterials




Journal of


Journal of





CoatingsJournal of

Advances in








MaterialsJournal of


Nano

materials




(a) (b)

120

80

40

00

105Ω

cm2 )

00 40 80105 Ω cm2)

103Ω

cm2 )

103 Ω cm2)

90

60

30

0000 30 60

0000

0025

0050

010105 Hz

0010

00250050

010

105 Hz

minusIm

Z(

minusIm

Z(

Re Z (Re Z (

(c)





(a) (b)

(c) (d)


140

120

100

80

60

40

20

0

Cros

s sec

tion

(nm

2 times10

minus16 )

400 500 600 700 800 900Wavelength (nm)

15

12

09

06

minus400

minus200 0

200

400

X (nm)

24201612080400

Z(n

m)

120576 = 10120576 = 576

(b) times103

1120583m

(a)





d

a


Plasma Plasma

(a)

10

0100

8060

4020

00

20

40

60

80

100

(nm

)

(nm

)

(b)

15

1

05

0

03 06 09

Curr

ent (120583A

)

(A)

(B)

(C)


(c)


6








2) gases Due to the




NV

C

(a) (b)

(c)

(d) (e)








2) and






Drain

Drain

DrainGate

Gate

Gate

Source

Source

Source

10minus7

10minus9

10minus11

10minus13

10minus15

Dra

in cu

rren

t (A

)

Dra

in cu

rren

t (A

)

Curr

ent (

A)


10minus8

10minus9

10minus10

10minus11

10minus12

10minus13

Drain voltage = 10V

10minus10

10minus11

10minus12

10minus13

10minus140 50 100 150 200


1st2nd3rd

(a)

(b) (c)

(d) (e) (f)

5120583m

2120583m






(a) (b)

(c) (d)







2film





46] In [47 48] TiO2



2film on


2on diamond Siuzdak





2treatment


BDD layers


50120583m 1120583m

(a)

1120583m

10120583m

(b)

1120583m

10120583m

(c)

1120583m

10120583m

(d)


40

20

0

minus20


Curr

ent (120583A

)

(a)

p-diamond

p-diamond

Si-substrate

Voltage (V)

ITOZnO NRs

vac

CBEd

VB n-ZnO

ΔEC

ΔEVEF

Y1

Ag

120594ZnO

120594Dia





Ti plateAnodization

process

TiO2 nanotubes

MW CVD

BDD on TiO2

nanotubes


30 32 34 36

Nan

owire

sN

anot

ubes







Acknowledgment


References












4




















































2nanoparticles






2nanotubeboron-




















CeramicsJournal of







Biomaterials




Journal of


Journal of





CoatingsJournal of

Advances in








MaterialsJournal of


Nano

materials




(a) (b)

(c) (d)


140

120

100

80

60

40

20

0

Cros

s sec

tion

(nm

2 times10

minus16 )

400 500 600 700 800 900Wavelength (nm)

15

12

09

06

minus400

minus200 0

200

400

X (nm)

24201612080400

Z(n

m)

120576 = 10120576 = 576

(b) times103

1120583m

(a)





d

a


Plasma Plasma

(a)

10

0100

8060

4020

00

20

40

60

80

100

(nm

)

(nm

)

(b)

15

1

05

0

03 06 09

Curr

ent (120583A

)

(A)

(B)

(C)


(c)


6








2) gases Due to the




NV

C

(a) (b)

(c)

(d) (e)








2) and






Drain

Drain

DrainGate

Gate

Gate

Source

Source

Source

10minus7

10minus9

10minus11

10minus13

10minus15

Dra

in cu

rren

t (A

)

Dra

in cu

rren

t (A

)

Curr

ent (

A)


10minus8

10minus9

10minus10

10minus11

10minus12

10minus13

Drain voltage = 10V

10minus10

10minus11

10minus12

10minus13

10minus140 50 100 150 200


1st2nd3rd

(a)

(b) (c)

(d) (e) (f)

5120583m

2120583m






(a) (b)

(c) (d)







2film





46] In [47 48] TiO2



2film on


2on diamond Siuzdak





2treatment


BDD layers


50120583m 1120583m

(a)

1120583m

10120583m

(b)

1120583m

10120583m

(c)

1120583m

10120583m

(d)


40

20

0

minus20


Curr

ent (120583A

)

(a)

p-diamond

p-diamond

Si-substrate

Voltage (V)

ITOZnO NRs

vac

CBEd

VB n-ZnO

ΔEC

ΔEVEF

Y1

Ag

120594ZnO

120594Dia





Ti plateAnodization

process

TiO2 nanotubes

MW CVD

BDD on TiO2

nanotubes


30 32 34 36

Nan

owire

sN

anot

ubes







Acknowledgment


References












4




















































2nanoparticles






2nanotubeboron-




















CeramicsJournal of







Biomaterials




Journal of


Journal of





CoatingsJournal of

Advances in








MaterialsJournal of


Nano

materials






d

a


Plasma Plasma

(a)

10

0100

8060

4020

00

20

40

60

80

100

(nm

)

(nm

)

(b)

15

1

05

0

03 06 09

Curr

ent (120583A

)

(A)

(B)

(C)


(c)


6








2) gases Due to the




NV

C

(a) (b)

(c)

(d) (e)








2) and






Drain

Drain

DrainGate

Gate

Gate

Source

Source

Source

10minus7

10minus9

10minus11

10minus13

10minus15

Dra

in cu

rren

t (A

)

Dra

in cu

rren

t (A

)

Curr

ent (

A)


10minus8

10minus9

10minus10

10minus11

10minus12

10minus13

Drain voltage = 10V

10minus10

10minus11

10minus12

10minus13

10minus140 50 100 150 200


1st2nd3rd

(a)

(b) (c)

(d) (e) (f)

5120583m

2120583m






(a) (b)

(c) (d)







2film





46] In [47 48] TiO2



2film on


2on diamond Siuzdak





2treatment


BDD layers


50120583m 1120583m

(a)

1120583m

10120583m

(b)

1120583m

10120583m

(c)

1120583m

10120583m

(d)


40

20

0

minus20


Curr

ent (120583A

)

(a)

p-diamond

p-diamond

Si-substrate

Voltage (V)

ITOZnO NRs

vac

CBEd

VB n-ZnO

ΔEC

ΔEVEF

Y1

Ag

120594ZnO

120594Dia





Ti plateAnodization

process

TiO2 nanotubes

MW CVD

BDD on TiO2

nanotubes


30 32 34 36

Nan

owire

sN

anot

ubes







Acknowledgment


References












4




















































2nanoparticles






2nanotubeboron-




















CeramicsJournal of







Biomaterials




Journal of


Journal of





CoatingsJournal of

Advances in








MaterialsJournal of


Nano

materials




NV

C

(a) (b)

(c)

(d) (e)








2) and






Drain

Drain

DrainGate

Gate

Gate

Source

Source

Source

10minus7

10minus9

10minus11

10minus13

10minus15

Dra

in cu

rren

t (A

)

Dra

in cu

rren

t (A

)

Curr

ent (

A)


10minus8

10minus9

10minus10

10minus11

10minus12

10minus13

Drain voltage = 10V

10minus10

10minus11

10minus12

10minus13

10minus140 50 100 150 200


1st2nd3rd

(a)

(b) (c)

(d) (e) (f)

5120583m

2120583m






(a) (b)

(c) (d)







2film





46] In [47 48] TiO2



2film on


2on diamond Siuzdak





2treatment


BDD layers


50120583m 1120583m

(a)

1120583m

10120583m

(b)

1120583m

10120583m

(c)

1120583m

10120583m

(d)


40

20

0

minus20


Curr

ent (120583A

)

(a)

p-diamond

p-diamond

Si-substrate

Voltage (V)

ITOZnO NRs

vac

CBEd

VB n-ZnO

ΔEC

ΔEVEF

Y1

Ag

120594ZnO

120594Dia





Ti plateAnodization

process

TiO2 nanotubes

MW CVD

BDD on TiO2

nanotubes


30 32 34 36

Nan

owire

sN

anot

ubes







Acknowledgment


References












4




















































2nanoparticles






2nanotubeboron-




















CeramicsJournal of







Biomaterials




Journal of


Journal of





CoatingsJournal of

Advances in








MaterialsJournal of


Nano

materials




Drain

Drain

DrainGate

Gate

Gate

Source

Source

Source

10minus7

10minus9

10minus11

10minus13

10minus15

Dra

in cu

rren

t (A

)

Dra

in cu

rren

t (A

)

Curr

ent (

A)


10minus8

10minus9

10minus10

10minus11

10minus12

10minus13

Drain voltage = 10V

10minus10

10minus11

10minus12

10minus13

10minus140 50 100 150 200


1st2nd3rd

(a)

(b) (c)

(d) (e) (f)

5120583m

2120583m






(a) (b)

(c) (d)







2film





46] In [47 48] TiO2



2film on


2on diamond Siuzdak





2treatment


BDD layers


50120583m 1120583m

(a)

1120583m

10120583m

(b)

1120583m

10120583m

(c)

1120583m

10120583m

(d)


40

20

0

minus20


Curr

ent (120583A

)

(a)

p-diamond

p-diamond

Si-substrate

Voltage (V)

ITOZnO NRs

vac

CBEd

VB n-ZnO

ΔEC

ΔEVEF

Y1

Ag

120594ZnO

120594Dia





Ti plateAnodization

process

TiO2 nanotubes

MW CVD

BDD on TiO2

nanotubes


30 32 34 36

Nan

owire

sN

anot

ubes







Acknowledgment


References












4




















































2nanoparticles






2nanotubeboron-




















CeramicsJournal of







Biomaterials




Journal of


Journal of





CoatingsJournal of

Advances in








MaterialsJournal of


Nano

materials




(a) (b)

(c) (d)







2film





46] In [47 48] TiO2



2film on


2on diamond Siuzdak





2treatment


BDD layers


50120583m 1120583m

(a)

1120583m

10120583m

(b)

1120583m

10120583m

(c)

1120583m

10120583m

(d)


40

20

0

minus20


Curr

ent (120583A

)

(a)

p-diamond

p-diamond

Si-substrate

Voltage (V)

ITOZnO NRs

vac

CBEd

VB n-ZnO

ΔEC

ΔEVEF

Y1

Ag

120594ZnO

120594Dia





Ti plateAnodization

process

TiO2 nanotubes

MW CVD

BDD on TiO2

nanotubes


30 32 34 36

Nan

owire

sN

anot

ubes







Acknowledgment


References












4




















































2nanoparticles






2nanotubeboron-




















CeramicsJournal of







Biomaterials




Journal of


Journal of





CoatingsJournal of

Advances in








MaterialsJournal of


Nano

materials




50120583m 1120583m

(a)

1120583m

10120583m

(b)

1120583m

10120583m

(c)

1120583m

10120583m

(d)


40

20

0

minus20


Curr

ent (120583A

)

(a)

p-diamond

p-diamond

Si-substrate

Voltage (V)

ITOZnO NRs

vac

CBEd

VB n-ZnO

ΔEC

ΔEVEF

Y1

Ag

120594ZnO

120594Dia





Ti plateAnodization

process

TiO2 nanotubes

MW CVD

BDD on TiO2

nanotubes


30 32 34 36

Nan

owire

sN

anot

ubes







Acknowledgment


References












4




















































2nanoparticles






2nanotubeboron-




















CeramicsJournal of







Biomaterials




Journal of


Journal of





CoatingsJournal of

Advances in








MaterialsJournal of


Nano

materials




Ti plateAnodization

process

TiO2 nanotubes

MW CVD

BDD on TiO2

nanotubes


30 32 34 36

Nan

owire

sN

anot

ubes







Acknowledgment


References












4




















































2nanoparticles






2nanotubeboron-




















CeramicsJournal of







Biomaterials




Journal of


Journal of





CoatingsJournal of

Advances in








MaterialsJournal of


Nano

materials













4




















































2nanoparticles






2nanotubeboron-




















CeramicsJournal of







Biomaterials




Journal of


Journal of





CoatingsJournal of

Advances in








MaterialsJournal of


Nano

materials





















2nanoparticles






2nanotubeboron-




















CeramicsJournal of







Biomaterials




Journal of


Journal of





CoatingsJournal of

Advances in








MaterialsJournal of


Nano

materials










CeramicsJournal of







Biomaterials




Journal of


Journal of





CoatingsJournal of

Advances in








MaterialsJournal of


Nano

materials



review article a review on the low-dimensional and...

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