Electric Field Effect in Organic SemiconductorsDMR 0405208 PI: Michael Gershenson

The single-crystal organic field-effect transistors (OFETs), developed for the first time at Rutgers, allow the exploration of fundamentals of organic electronics and development of novel applications. Due to dramatic reduction of the density of surface defects, the intrinsic (not limited by static disorder) charge transport was realized for the first time on the surface of organic semiconductors.

V. Podzorov et al., PRL 93, 086602 (2004) V. Sundar et al., Science 303, 1644 (2004)

Development of a novel class of single-crystal OFETs, the so-called “air-gap” devices, enables the realization of a very high room-temperature mobility of charge carriers (~ 20 cm2/Vs), an order of magnitude greater than that in the best thin-film organic transistors.

E. Menard et al., Adv. Materials 16, 2097 (2004)

Novel light-induced effects have been observed in the single-crystal OFETs; these effects can be used for development of the light-addressed organic memory and lithography-free patterning of OFETs.

V. Podzorov and M. Gershenson, PRL 95, 016602 (2005); V. Podzorov et al., Appl. Phys. Lett. 85, 6039 (2004)

Rubrene single

crystal 1 mm

Molecular resolution STM imageof rubrene

surface

“air-gap” organic single-crystal field-effect transistor

The first review on single-crystal

OFETs: R. de Boer, M. Gershenson,

A. Morpurgo, and V. Podzorov, Phys.

Stat. Sol. A 201, 1302 (2004).

Electric Field Effect in Organic SemiconductorsDMR 0405208 PI: Michael Gershenson

Education:

Post-doc and co-PI: Vitaly PodzorovGraduate student: Sung-Po ChaoUndergrad. student: Matt Calhoun High-school student: Mark Ioffe

Collaborators:• D. Frisbie, M. Nathan et al. (U. Minnesota)• J. Rogers, E. Menard et al. (UIUC)• R. de Boer, A. Morpurgo (Delft Tech. U.)

The NSF support contributed a great deal to the development of a fully-functional Nanofabrication Facility at the Dept. of Physics and Astronomy, Rutgers. This Facility is used by many students, post-docs, and faculty for the work on several cutting-edge projects. Both the PI (MG) and co-PI (VP) are involved in training of all users; MG currently serves as the director of this Facility.

All students enjoyed broad exposure to the state-of-the-art tools of modern solid state and semiconductor research and the cutting-edge physics research. Two interns visited our lab for a week: Etienne Menard from the group of Prof. Rogers (UIUC) and Matthew Panzer from the group of Prof. Frisbie (U. Minnesota).