7/31/2019 Semiconductor Devices Syllabus

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Detailed SyllabusLecture-wise Breakup

SubjectCode

10B11EC411 Semester Semester EVEN Session 2011 -12

Month from January to June

SubjectName Semiconductor Devices

Credits 4 Contact Hours 4

Faculty(Names)

Coordinator(s) Md Jawaid Alam

Teacher(s)(Alphabetically)

1 Bhawna Gupta 2 Md Jawaid Alam

3 Mudassar Meer

ModuleNo.

Subtitle of the Module Topics in the module No. of Lectures forthe module

1. Elemental and compoundsemiconductors

Introduction to the courseElemental semiconductor, III-V

compound semiconductors, II-VIcompound and other semiconductors,valance bond and energy band modelof semiconductors,Direct and Indirect band gapsemiconductors

2 4

2

1

2. Semiconductor in thermalequilibrium

Density of state function, Femi Dirac

distribution and electron -hole concentrations in

non degenerate semiconductors,

Distribution of electron and holes in bands,

heavily doped semiconductor

3

4

1

3. Current flow in semiconductors,drift , diffusion process & Einstein

relation

Drift and diffusion processes,scattering mechanism and mobility,

hall effectand Einstein relation

1

1 31

4. Excess carriers generation &recombination processes and

semiconductor device equations.

Generation of excess electron holepair, low and high level injections,excess carrier recombination and lifetime

3

5. P-N Junction fundamentals Junction electrostatics, Electric fieldand potential distribution, varacterdiodes

2

6. P-N Junction diode static &dynamic characteristic

I-V characteristics of ideal and realdiodes,temperature depends of I-V char,small signal AC and transient behavior

2

1 4

1

7. Metal Semiconductor Contacts andHeterojunctions

Rectifying and non rectifying contacts,schttoky barrier diodes,I-V characteristics, and comparisonwith pn junction diode

3 4

1

8. JFETs , MESFETs Operating Principle and , I-V char.,Device parameter and cutofffrequency,

2

9. MOS- Filed Effect Transistor Ideal and Real MOS capacitor, types ofMOSFETS, I-V char.Devices parameters and cut offfrequency, short channel effects andscaling

4 9

5

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7/31/2019 Semiconductor Devices Syllabus

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10 Bipolar Junction Transistor Structure and parameters, Ebers-Mollmodel, I-V characteristics, Secondorder effects, Device parameter ,Cutoff Frequency

5

11 Device fabrication techniques Crystal Growth, Diffusion, Ion-implantation

2

Total number of Lectures 42

Recommended Reading material:

1. Ben G.Streetman and Sanjay Banerjee, Solid State Electronics Devices, 5th Ed,PHI,

2001

2. M.S.Tyagi: Introduction to Semiconductor Materials and Devices, John Wiley, LowCost edition, 2004

3. S.M.Sze: Semiconductor Devices :Physics and Technology, , John Wiley, Low Costedition, 2002

4. Donald A. Neamen, Semiconductor Physics and Devices, TMH, 2007.

Evaluation Scheme:

EventMarks

Test 1 15

Test 2 25

Test 3 35

Tutorial Evaluation 15

Attendance 10

JIIT, Noida