semiconductor lasers for optical for optical...
TRANSCRIPT
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Semiconductor LasersSemiconductor Lasers
for Optical for Optical CommunicationCommunication
(part 1)(part 1)
Claudio CoriassoR&D and Production Engineering Manager
1
C. Coriasso – Nov 2011
Turin Technology Centre
MQW
10Gb/s DFB Laser
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OutlineOutline
1) Background and Motivation
• Communication Traffic Growth
• Photonics evolution
2) Optical Feedback and Active materials
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C. Coriasso – Nov 2011
2) Optical Feedback and Active materials
• Distributed FeedBack Lasers(DFB)
• Strained Multiple Quantum Wells (MQW)
3) Avago snapshot
• Turin Technology Center (TTC)
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Communication GrowthCommunication Growth
Tim Berners-Lee computer at CERN:
World’s first Web Server 1991
Communication has always been one of the main driving force for the
development of new technologies: Telegraph, Telephone, Fiber Optic,
Laser, …
3
C. Coriasso – Nov 2011
The Internet (30.2% world population)
Worldwide communication traffic is doubling every 18 months (2dB/year)
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Traffic structure and Energy ConsumptionTraffic structure and Energy Consumption
• Data Centers and the Internet consume about 4% of electricity today
(8.7 × 1011 kWhr/year including PCs)
• By 2018 the energy utilized by IP traffic will exceed 10% of the total electrical power
generation in developed countries (1)
• Most of the traffic is between machines and much of the information created today cannot
even be stored (2)
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C. Coriasso – Nov 2011
(1) L.Kimerling, MIT
(2) R.Tkatch, Alcatel Lucent
(3) D. Lee, FacebookEuropean Conference on Optical Communication 2010
FACEBOOK (3) :
• 800 milion active users worldwide
• 20.6 miliion active users in Italy
• 8 billion minute/day
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Photonics in Optical CommunicationPhotonics in Optical Communication
Photonics
Electronics
5
C. Coriasso – Nov 2011
Today Photonic Network:
Storage Area Network Local Area Network
Wide Area Network
Metro Area Network
10km 100km100m10m 1km 1000km
Traffic volume
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Photonics in Optical CommunicationPhotonics in Optical Communication
Emission,
Transmission,
Processing (modulation, switching, amplification, …)
Detection
Photonics:
Science and technology of light
Began with Laser (1960) and Fiber Optic (1966) inventions.
These inventions formed the basis for the telecommunications revolution
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C. Coriasso – Nov 2011
These inventions formed the basis for the telecommunications revolution
of the late 20th century and provided the infrastructure for the internet.
1st Laser demonstration : T. Maiman 1960 1st Low-Loss Fiber Optic Proposal: C. Kao 1966
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Fiber OpticsFiber Optics1966: First proposal of fiber optic for telecom. Basic design [Kao STC]
1970: Production of first fiber optic [Corning]
1976-77: First fiber optic networks
1988: First transoceanic fiber-optic cable (3148 miles, 40000 simultaeous telephone calls)
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C. Coriasso – Nov 2011
C. K. Kao receiving
his Nobel Prize
Stockholm 2009
First operative optical cable in urban areas
Torino 1976First optical system carrying live traffic
over public network Chicago 1977
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Semiconductor LASERSemiconductor LASER1962: First Realization of Semiconductor Laser (GaAs @T = - 200 oC) [GEC, IBM, MIT]
1963: Proposal of Heterostructure Semiconductor Laser (H. Kroemer, Z. Alferov: Nobel Prize 2000)
1970: First Realization of Heterostructure Semiconductor Laser (Z. Alferov)
1972: Proposal of Distributed Feedback Laser (DFB)
1970: Room Temperature CW operation of 1.5µm Laser
1977: Proposal of Vertical Cavity Surface Emitting Laser (VCSEL)
1984: First Realization of Strained MQW in semiconductor laser
1988: First Realization of VCSEL
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C. Coriasso – Nov 2011
2000: First Uncooled Telecom Lasers
Z. Alferov receiving
his Nobel Prize
Stockholm 2000
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Grating
(optical feedback)Electrodes
(current injection)
Laser requirements for optical communicationLaser requirements for optical communication
• High bandwidth (≥≥≥≥ 10Gb/s)
• Single mode operation
• Low consumption
• Uncooled operation (up to 80oC)
25Gb/s
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C. Coriasso – Nov 2011
Quantum wells
(optical gain)Waveguide
(optical confinement)
DFB MQW Laser
State of Art
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Distributed FeedbackDistributed Feedback
a+a-
+da π
Λ
∆Φ = π ⇒ λ/4a+
a-
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C. Coriasso – Nov 2011
T
R
λB
⋅=
=Λ
= −
2.32
24.0
651
λ
πβ
µ
κ
m
cm
Λ−+=
−
Λ−−=
−+−
−++
aiikadz
da
ikaaidz
da
πβ
πβ
T
R
λB
T
R
λB
( )
×+⋅=
=Λ
=
−
−
i
m
cm
4
1
104.32.32
24.0
65
λ
πβ
µ
κ
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• Optical gain, light emission (direct band gap) ...
Semiconductor material basic requirementsSemiconductor material basic requirements
for photonic devicesfor photonic devices
e
h
photon emission
through e-h
recombination
ωh
11
C. Coriasso – Nov 2011
•... at wavelength of interest: λ = 1,3 µm e 1,55 µm
• compatibility with semiconductor substrates: Si, GaAs, InP
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III V
IIIIII--V semiconductor materialsV semiconductor materials
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C. Coriasso – Nov 2011
There are no single elements or binary compounds compatible with commercial substrates and emitting light at 1.3 µµµµm e 1.55 µµµµm.Semiconductor alloys of III-V elements are the best materials for photonic devices.
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Semiconductor HeterostructuresSemiconductor Heterostructures
A
A
BB
A
Double Heterostructure (DH)
n
pe-h confinement
A
A
BB
A
Separate Confinement Heterostructure (SCH)
n
p C
C
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C. Coriasso – Nov 2011
A
(Substrate)
Eg(A)> Eg(B)
A
(Substrate) photon
confinementEg(A)> Eg(B) )> Eg(B)
n(A)< n(C) < n(B)
Combination of layers of different crystalline semiconductors.
H. Kroemer, Varian associates 1963
(Nobel Prize in Physics, 2000)
The idea was experimentally demonstrated using the Liquid Phase Epitaxy (LPE)
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Quaternary alloys InGaAsP / AlGaInAsQuaternary alloys InGaAsP / AlGaInAs
T. P. Pearsall, , Wiley (1982)
In1-xGaxAsyP1-y / Al1-x-yGaxInyAs
alloys cover all the spectral range
required for optical telecom
• High quality material
• Established
growth techniques
and material processing
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C. Coriasso – Nov 2011
and material processing
• Suited for active devices (lasers,
amplifiers, modulators, ...) and
passive structures (waveguides,
couplers, ...)
In1-xGaxAsyP1-y
lattice matched to InP
(λ(λ(λ(λg=0.92 - 1.65µµµµm))))
InGaAs
(λλλλg=1.65µµµµm))))
InP (λλλλg=0.92µµµµm)
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(Basic) Optical properties of semiconductors(Basic) Optical properties of semiconductors
lhhh
e
E
hω
Eg
JDOS
hω
αk
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C. Coriasso – Nov 2011
**
**9
elh
ehh
mm
mm
≅
>
Three bands are involved in optical transitions:
- Electrons Conduction Band
- Heavy holes
- Light holesValence Band
Eg
hω
gEJDOS −∝ ωh
Joint density of states (available for optical
transitions) is a square root function of the
energy in excess of the energy gap
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Quantum WellsQuantum Wells
Quantum-Size Double Heterostructure (Quantum Well) is a planar waveguide for electrons
C. H. Henry, Bell Labs 1972
The idea was experimentally demonstrated in 1974 using the newly developed Molecular
Beam Epitaxy (MBE).
A d = 3
BULK2
B A B
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C. Coriasso – Nov 2011
A
QUANTUM WELL
d = 3
z
y
x
d = 2 Lw ~ λe
EgAEg
B EgQW
1
21
Lw
QW is now a widely spread
quantum product
based in atomic-scale technology
B A B
Transmission Electron Microscope
view of QW
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)()()(222
0
2
2znzznk
dz
deff ψψ =
+ neff
2
Ψ(z)
n2(z)
Photon wave eqn. vs. Electron wave eqn.Photon wave eqn. vs. Electron wave eqn.
Ψ(z)
Helmholtz equation (photon)
Schroedinger equation (electron)z
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C. Coriasso – Nov 2011
)()()(2
2
22
zEzzVdz
d
mψψ =
+−
h
E
Ψ(z)V(z)
)()(2
zVzn −⇒potential wells confine electrons (quantum wells)
refractive index ridges confine photons (optical waveguides)
z
cladding ⇒ barrier
core ⇒ well
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Eigenfunction/Eigenvalues CalculationEigenfunction/Eigenvalues Calculation
nTE0
nTE1E0
E1ΨTE0
ΨTE1
Ψ1
Ψ0
Waveguide Quantum Well
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C. Coriasso – Nov 2011
E0
E1nTE0
nTE1
)()(
)()(
+−
+−
Ψ∂
∂=Ψ
∂
∂
Ψ=Ψ
zz
zz
zz
TETE
TETE
)()(
1)(
)(
1
)()(
+
+
−
−
+−
Ψ∂
∂=Ψ
∂
∂
Ψ=Ψ
zzzm
zzzm
zz
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Reduced dimensionality structuresReduced dimensionality structures
A
QUANTUM WELL
d = 3z
y
x
d = 2
Lz ~ λe
BULK
PLANAR WAVEGUIDE
E.M.
AB
B
Q.M.
1975: R.Dingle and C.Henry
USA Patent Application
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C. Coriasso – Nov 2011
Lz ~ λe USA Patent Application
QUANTUM WIRE
d = 1
Lz ,Ly ~ λe
AB
B
QUANTUM DOT
d = 0
Lz ,Ly ,Lx ~ λe
CHANNEL WAVEGUIDE
OPTICAL RESONATORA
B
B
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MQW heterostructuresMQW heterostructures
Multi Quantum Wells are stacks of decoupled QWs (with sufficiently thick barriers): enhancement of single QW effects
ZY
XZ
VA
LE
NC
E B
AN
D
CO
ND
UC
TIO
N B
AN
D
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C. Coriasso – Nov 2011
ENERGY
WELLSSUBSTRATE BARRIERS
VA
LE
NC
E B
AN
D
CO
ND
UC
TIO
N B
AN
D
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QW band structureQW band structure
E
hh1
e1
e2
hh2
lh2
lh1
11 1’1
TETM
22hω
JDOS
1
hω1 2
One step for
every
allowed
transition
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C. Coriasso – Nov 2011
lh2
z
2D JDOS related features:
• Sharp absorption edge (2D JDOS)
• High differential gain
• Wide gain bandwith
• High electroabsorption efficiency (QCSE)
• Strong optical nonlinearities
• . . .
e1-h
h1
EgQW
Egbulk
hω
e1-l
h1
e2-h
h2
( )∑ −Θ=ji
ji
jiEJDOS ω
π
µh
h2
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ExcitonsExcitons
e
h
e - h semi-bound states (τ ∼ 100 fs) whichproduce sharp absorption peaks detuned from the transition energies (absorption steps) by their binding energy
hν
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C. Coriasso – Nov 2011
Eb (~8 meV per InGaAsP)
E
α
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QW optical propertiesQW optical properties
αTE
αTM
nTEnTM
ω
ωαωω
ωω
ωωα
πωωα
2
)()()(n̂
'
')'(1)()(
0
22
cin
dcnstateexcitonJDOS +=⇒
−Ρ+=⇒+∝ ∫
∞
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C. Coriasso – Nov 2011
Polarisation selection rules:
TE: 3/4 hh, 1/4 lhTM: 0 hh, 1 lh
e1-h
h1
e1-l
h1
e1-h
h1
e1-l
h1
αTM
Strong dichroism ⇒
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ma a
a
a lattice parameter of epitaxial layer
a lattice parameter of substrate
L S
S
L
S
=− =
=
RST
Strain(1) Strain(1)
The epitaxial layer can be grown with a lattice parameter slightly different from the
substrate lattice parameter (lattice mismatch).
, aL = lattice parameter of the epitaxial layer
aS = lattice parameter of the substrate
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C. Coriasso – Nov 2011
compressive strain tensile strain
aL
aS
aL
aS
m>0 m<0
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T. P. Pearsall, , Wiley (1982)
Strain(2) Strain(2)
InP
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C. Coriasso – Nov 2011
InGaAs
InP
InGaAs
±1%
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k
E
lhhh
e
m=0
Strain effect on band structure: Strain effect on band structure:
k
E
lhhh
e
m>0
compressive
strain
k
E
lhhh
e
m<0
tensile
strainunstrained
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C. Coriasso – Nov 2011
hh1
e1
e2
lh1
11 1’1
m=0
TM
TE
lh1
m>0
hh1
e1
e2
11 1’1
TM
TE
Low escape time
Fast devices
High To
m<0
hh1
e1
e2
lh1
11 1’1
TE, TM
Low dichroism
Polarization-independent devices
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Optical gain in MQW vs. bulkOptical gain in MQW vs. bulk
Bulk MQW
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C. Coriasso – Nov 2011
• higher differential gain (dG/dN)
• wider spectral bandwidth
0 5 10 15 20-15
-10
-5
0
5
10
Rel. A
mplitude (dB)
νννν [GHz]
thdB IIdN
dG−∝−3ν
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SEMICONDUCTOR LASER
Quantum Wells: Quantum Wells:
AtomicAtomic--Controlled Artificial StructuresControlled Artificial Structures
ACTIVE LAYER MQW
BARRIER
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C. Coriasso – Nov 2011
ATOMS
QUANTUM WELL
BARRIER
)()()(2
2
22
zEzzVdz
d
mψψ =
+−
h),,(),,( FNkiFNn λλ +
Control of Optical Properties through atomic-scale technologyQuantum Well requires sub-monolayer manufacturing control (σ < σ < σ < σ < 0.1nm over 10cm2 )achievable with MBE or MOCVD.
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1939
Hewlett Packard
Foundation (T&M)
• Test & Measurement
November 1, 1999
Agilent spin-off
~40000 employees
T&M, Life science,
semiconductor components
Avago’s historyAvago’s historyDecember 1, 2005
Avago spin off
~ 6500 employees
Semiconductor
components
Former HP’s semiconductor components division
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C. Coriasso – Nov 2011
• Test & Measurement
• Life science
• Semiconductor components
• Computers/imaging…
~80000 employees
Computers, printers, imaging, …
T&M, Life science
Acquisition of TTC (Torino Technology Center)
former optoelectronic technology division of CSELT
R&D Corporate Center of STET (now Telecom Italia)
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Product leadership in target marketsProduct leadership in target markets
6500 products, more than 5000 patents
Headquarters: San Jose, Singapore
30
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Fiber Optic Business
Worldwide OperationsSingapore� Device Manufacturing
� Product ManufacturingSan Jose, CA � Product R&D
� Marketing
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C. Coriasso – Nov 2011
Torino, Italy Turin Technology Center (TTC)
� III-V Devices R&D & Manufacturing
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• Manufacturing of 10Gb/s FP and DFB lasers(>900k laser chips fabricated and delivered since 2007)
• R&D on high bandwidth uncooled DFB lasers
TTC current main activitiesTTC current main activities
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• R&D on semiconductor technology
R&D on photonic devices
since late 70’s
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• Lasers: FP, DFB, DBR, EML, WDM tuneable
• Detectors: PIN, APD
• SOA: gain blocks, clamped-gain, XGM and XPM
• Modulators
TTC activity in photonics devicesTTC activity in photonics devices
since late 70’ssince late 70’s
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• Modulators
• All-optical (nonlinear)
photonic devices
• Wavelength converters
• …
tuneable laser
10Gb/s λ−converter
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Laser fabrication Laser fabrication requires team work across the globe: requires team work across the globe:
not an easy task!not an easy task!
San Jose
-9h
Torino
Singapore
+7h
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Thanks for your attention
BOOKS:
• L. A. Coldren, S. W. Corzine, Diode Lasers and Photonic Integrated Circuits Wiley Series in Microwave and Optical Engineering
• G. Ghione, Semiconductor Devices for High-Speed OptoelectronicsCambridge University Press
LINKS:
• http://www.lightwaveonline.com
• http://www.photonics.com/
• http://www.avagotech.com/