sicilia - agenda.infn.it filesilicon carbide detectors for intense luminosity investigations and...
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Silicon Carbide Detectorsfor Intense Luminosity Investigations and Applications
CALL presentata nell’ambito della CSN5, anni 2016-2018
SiCILIA
Luca Labate
Istituto Nazionale di Ottica – CNR, Pisaand INFN, Sezione di Pisa
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SiCILIA
Active area 1 cm2 E stage thickness ≥ 100 m E stage thickness 500 ÷ 1000 m
Epitaxial growth SIC:beyond the state of the art
New Tecnology p-n junctions SiC
SiC E-E telescopes
Radiation Hard detectors for Nuclear Physics experiments and Nuclear applications
E a
mp
litu
de
(a.u
.)
E amplitude (a.u.)
Ion identification
Know how transfer
From the proposal Requirements for next generation nuclear physics experiments at high luminosity (E/E ~1/1000, m/m~1/200, t~0.1o), very low cross sections → high fluxes, exceeding those tolerated by state of the art solid state detectorsSimilar requirements are encountered in laser-driven proton/ion acceleration, where also the insensitivity to visible light would be an assetSilicon carbide offers an ideal response to such challenges
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Wide bandgap (3.3eV) lower leakage current than silicon Signal (for MIP !): Diamond 36 e/m SiC 51 e/m Si 89 e/m more charge than diamond Si/SiC≈2
Higher displacement threshold than silicon
radiation harder than silicon
M.Moll , NIM in Physics Research A 511 (2003) 97–105
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NUMEN project NUclear Matrix Elements of Neutrinoless Double Beta Decays by Heavy Ion Double Charge Exchange Reactions
DCE => 12C, 18O, 20Ne to energies between 15 and 30 MeV/u
Applications
MAGNEX
1 cm2 E-E telescope
European initiative for a next-generation charged particle array
FAZIA Collaboration
Radiation hard telescopes for heavy-ion induced reactions around and below the Fermi energy (10-100 AMeV). The project aim is to build a 4Pi array for charged particles, with high granularity and good energy resolution, with A and Z identification capability
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-NPDetectors working in plasmas environment
TDR1-Laser Driven Nuclear Physics
Requirements Radiation Hardness Timing Insensitivity to the visible radiation X-ray sensitivity Neutron sensitivity (ITER, ESS, etc.) Nuclear reactions in Laser plasmas @ ELI-NP
ELIMED concept
ELI-Beamlines MEDical and multidisciplinary applications
Applications
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SiC detector construction: state of art
Schottky diodes on epitaxyal layer grow onto high-purity 4H–SiC n- type substrate
Active thickness ~ 80 m 4H-SiC bulk ~ 250 m Active Area ~ 2x2 mm2
SiCILIA 1 cm2 E-E telescope thickness of E stage ≥ 100 m thickness of E stage 500 ÷ 1000 m
Istituto per la Microelettronica e Microsistemi
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Deliverables
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SiCILIASiCILIA
WP4: G.GoriniNeutrons
Irradiation and test
WP4: G.GoriniNeutrons
Irradiation and test
WP5: D. GiovePhoton detection and spectroscopy
WP5: D. GiovePhoton detection and spectroscopy
WP6: G.PasqualiIons identification:
Pulse shape discrimination
WP6: G.PasqualiIons identification:
Pulse shape discrimination
WP1: S.Tudisco Design studies
and test
WP1: S.Tudisco Design studies
and test
WP2: F. La ViaMaterial Study
and devicesconstruction
WP2: F. La ViaMaterial Study
and devicesconstruction
WP3: G.CirroneIons and electrons
irradiation
WP3: G.CirroneIons and electrons
irradiation
CNR-IMM Catania
Tests @CNR-INO Pisa
FBK Trento ST-Microelectronics
Work packages organizationWP1 – Project coordinator and management
Tests @CNR-INO Pisa
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Risultati 2016
- Definizione delle specifiche rivelatori WP1,WP2
Simulazioni
- Definizione processo di realizzazione rivelatori WP2, WP1, WP5, STM, FBK
Definizione processo di epitassia: Caratterizzazione processo e resa ipotetica
Definizione strutture di bordo: Giunzione P+/N, Diodi Schottky
Lay-out e definizione del processo di realizzazione: Giunzioni P+/N, Diodi Schottky
- Allestimento set-up per caratterizzazioni WP2, WP5
Realizzazione dei dispositivi
- Test su diodi commerciali e vecchi dispositivi WP5, WP1, WP6
- Preparazione linee di irraggiamento WP3, WP4
- Test di dispositivi di confronto WP4
Test e preparazione dei set-up di misura
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People FTE 2017Giancarlo Bussolino 0.8Luca Labate 0.5
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Milestones 2018
WP1 – Caratterizzazione test e ottimizzazione dei prototipi - Design and construction del dimostratore SiC-Wall
WP2 - Characterization dei prototipi - Ottimizzazione and realizzazione dei dispositivi finali
WP3 - Irragiamenti ai LNS - Irraggiamenti al LINAC di Messina - Test sperimentali in laser-driven facilities (tra cui ILIL-INO-CNR)
Wp4 - Installazione di prototipi SiC al JET fusion reactor
Wp5 - Caratterizzazione X-Ray spectroscopy dei prototipi SiC
Wp6 - Studio dei prototipi di SiC single pads e telescopi con fasci ionici.
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Pisa activity in 2017 (partial overlapping with L3IA activity)
- Design and construction of the proton test beamline @ILIL-PW (collaboration with LNS)- Test of “old” SiC detectors (next test with SiC detectors developed in the framework of SiCilia foreseen in 2 weeks from now)
Pisa foreseen activity in 2018
- Test of SiC detectors (2-3 experimental campaigns)
Richieste 2017
Pisa: Consumi (consumabili laser) → 3 kEuroInventario (translation stages) → 5 kEuro
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