silicon carbide technology overview - richardson rfpd · 2019-05-15 · silicon carbide technology...
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Silicon Carbide Technology Overview
www.richardsonrfpd.comMARCH 2017
Your Global Source for RF, Wireless, Energy & Power Technologies www.richardsonrfpd.com | 800.737.6927 | 630.262.6800
Your Source for Silicon Carbide Power ProductsDeep Technical ExpertiseSilicon carbide (SiC) offers significant advantages in high-power, high-voltage applications where power density, higher performance and reliability are of the utmost importance. Solar inverters, welding, plasma cutters, fast vehicle chargers and oil exploration are a few examples of industrial applications that benefit from the higher breakdown field strength and improved thermal conductivity that SiC offers over silicon (Si) material.
SiC MOSFETs produce much lower switching losses compared to Si IGBTs, as shown in the yellow-highlighted areas below:
Si IGBT SiC MOS
Voltage
Turn
Off
Turn
On Eon = 10.0 mJ
Eoff = 11.2 mJ
Eon = 3.3 mJ
Eoff = 3.2 mJ
SiC Schottky diodes have near-zero reverse recovery losses compared to Si FREDs and are stable over temperature:
Current
Voltage
Current
Current
Current
Voltage
Voltage
SiC MOSFETs have a much more stable RDS(on) over temperature than Si MOSFETs.
SiC MOSFETs include a robust body diode with much lower reverse recovery charge (Qrr) and reverse recovery time (Trr) than Si MOSFETs.
Advantages of designing in SiC include: > SiC diodes have near-zero reverse recovery current > Improved efficiencies and decreased thermal dissipation > Smaller power electronics and system size > Higher power density > Higher operating frequency > Simple parallel operation > Reduced overall system cost
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2919 14 11 9 8 7 6
Savings/YR Pay Back Period (Months)• $200 cost differential between Si and SiC Module.• Motor operated for 16 Hrs daily every day.• Assuming 0.8% improvement in operational efficiency for the SiC motor drive.
Design in SiC products to substantially reduce switching and conduction losses, resulting in lower heat sink cost:
Lower losses lead to higher efficiencies and lower energy consumption, resulting in lifelong savings:
Use SiC products to restructure, not increase overall system cost.
Need to transfer 10kW
IGBT + Si Diode
SiC MOSFET + SiC Diode
SiC MOSFET + SiC Diode
Switching Frequency 20kHz 60kHz 100kHzInductors $62 $35 $20Capacitors $65 $65 $65Cooling $45 $30 $38Power Semiconductors $10 $40 $40Total $182 $170 $163
Use SiC Performance Advantages to Reduce Total Cost
Comparison based on:• 10kW interleaved boost converter• Output Power: 10kW
Design Options using SiC to reduce $ per WattOption 1
Higher Power50 HP instead of 30 HP
Option 2Smaller Cooling
at same 30 HP
Option 3 Smaller Cooling + Higher Frequency
at same 30 HP
FSW = 8 kHzRØ HS = 0.16 °C/WPLOSS Total = 369 W
n = 99.0%TJ = 127 °C
FSW = 8 kHzRØ HS = 0.55 °C/W (1/3 size)
PLOSS Total = 153 Wn = 99.3%
TJ = 135 °C
FSW = 35 kHz (>4×) RØ HS = 0.4 °C/W (2/3 size)
PLOSS Total = 204 W n = 99.1%
TJ = 136 °C
SiDrive
SiCDrive
SiDrive
Si Heat Sink
SiC HS
30 HP
50 HPSiCDrive
• Input Voltage Range: 300VDC - 450VDC• Output/DC-Link Voltage: 640VDC
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SiCtech hub
Discrete & Module Diodes Discrete MOSFETs MOSFET Modules SiC/Si Hybrid
700V, 1200V 600V, 700V, 500V, 600V, 800V
1700V 1200V, 1700V 900V, 1000V, 1200V
Current 10A – 90A 5A – 130A 20A – 480A 11A – 480A
RDS(on) — 33mW – 800m W 6mW – 110mW —
D3PAK, SOT-227, D3PAK, D3, SOT-227, D3PAK, TO-247, T-MAX,
SP1, TO-220, TO-247, SP1, SP3, SP3F, SOT-227, SP1, SP3F,
TO-247-2, TO-247 SOT-227 SP6, SP6-P SP4, SP6, SP6-P
Voltage — —
Current — —
RDS(on) — —
Voltage — — 600V, 900V, 1200V 600V, 650V, 1200V
Current — — 20A – 70A 10A –100A
RDS(on) — — 20mW – 80mW —
Voltage 600V, 650V, 1200V, 1700V 900V, 1000V, 1200V, 1700V 1200V, 1700V —
Current 1A - 50A 5A -90A 20A-325A —
RDS(on) — 25mW – 1000m W 3.6mW – 80m W —
SiC Discrete and Module Offering
Packages (mm)
Packages (mm)
Packages (mm)
Packages (mm)
50x120, 48x94, 62x108, 62x122, 130x140, 56x110, 80x110,
67x131, Super Mini DIP——
——33x66 (Flow 0) 37x82 (Flow 1)
47x108 (Flow 2)
36x72 (Flow 1B), 33x66 (Flow 0) 35x37 (Flow 0B), 37x82 (Flow 1)
600V, 650V, 1200V, 1700VVoltage
45x108, 62x106,
High Perf (65x110)
SiC Tech Hub www.richardsonrfpd.com/SiCPower
Realize the benefits of silicon carbide technology with Richardson RFPD’s offering of SiC transistors, diodes, transistor modules and SiC/Si hybrid modules. Subscribe (free!) to our SiC Tech Hub for the latest products and news regarding the adoption of this technology in power electronics circuits.
TO-220-2, TO-220-F2 (Full Pack), TO-247, TO-247-2, TO-252-2,
TO-263-2, QFN, TO-220 Isolated—
TO-247, TO-263-7L, TO-247-4L
Welcome to the SiC Tech Hub,brought to you by Richardson RFPD.
Need a Design Advisor? Contact us.
Contact Richardson RFPD for details.
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Reference Designs / Evaluation Kits
Part Number: CRD8DD12P 8kW LLC zero-voltage switching (ZVS) converter Supplier: Wolfspeed
Part Number: CRD-50DD12N 50kW interleaved boost converter evaluation unit Supplier: Wolfspeed
Part Number: KIT8020-CRD-8FF1217P-1 SiC MOSFET/Diode evaluation kit with multiple circuit configurations Supplier: Wolfspeed
Part Number: CRD-060DD12P 60W flyback auxiliary DC power supply Supplier: Wolfspeed
Part Number: CRD-20DD09P-2 20kW Full Bridge Resonant LLC Converter Using 1000V, 65mΩ SiC MOSFET in 4L-TO247 Supplier: Wolfspeed
Part Number: CRD-060DD17P-2 60W Single-end flyback auxiliary power supply using1700V, 1Ω SiC MOSFET in surface mount 7L-D2PAK. Supplier: Wolfspeed
Part Number: CRD-5FF0912P SiC MOSFET evaluation kit featuring 900V, 120mΩ SiC MOSFET in 7L-D2PAK package in half bridge configuration. Supplier: Wolfspeed
Gate Driver Products
Part Number: CGD15FB45P16-Channel SiC gate driver board forWolfspeed CCSxxxM12CM2 modules.Supplier: Wolfspeed
Part Number: CRD-001 Single channel 1200V and 1700V SiC MOSFET gate driver board Supplier: Wolfspeed
Part Number: CGD15HB62P1SiC half-bridge gate driver optimizedfor Wolfspeed 62mm 1200V modulesSupplier: Wolfspeed
Part Number: PT62SCMD12 Dual SiC gate driver for 62mm CASxxxM12BM2 1200V Modules Supplier: Wolfspeed
Part Number: PT62SCMD17 Dual SiC gate driver for 62mm CASxxxM17BM2 1700V Modules Supplier: Wolfspeed
Part Number: CGD15HB62LP SiC half-bridge gate driver optimized for Wolfspeed CAS325M12HM2High Performance 65mm package Supplier: Wolfspeed
Part Number: MSCSICMDD/REF1Dual universal SiC gate driver intended for Microsemi discrete and module products.Supplier: Microsemi
Part Number: ADuM4121, ADuM4135, ADuM4136 High voltage single and dual-channel isolated gate driver ICs with 100kV/usec and 150kV/usec CMTI in 8-lead and 16-lead wide-body SOIC package.Supplier: Analog Devices Inc.
1SC2060P Core
RDHP-1417
SCALE-iDriver
Part Number: RDHP-xxxx Reference designs for adapting standard and planar core products 2SC0115T, 2SC0435T, 2SC0650P, 1SC2060P and SCALE-iDriverTM IC for SiC modules. Supplier: Power Integrations
Your Global Source for RF, Wireless, Energy & Power Technologies www.richardsonrfpd.com | 800.737.6927 | 630.262.6800
Package Styles Dimensions in millimeters (mm)
62x108 (D3)
62x108 (SP6P)
43x73 (SP3F)
62x108 (SP6)
SOT-227 (Isotop)
41x52 (SP1)
40x93 (SP4)
D3PAK (TO-268)
TO-220-2 TO-247-2TO-220 TO-247 T-MAX
37x82 (Flow 1)
33x66 (Flow 0)
©2017 Richardson RFPD, Inc. All other product names and logos are trademarks of their respective manufacturers. Rev.3/17 DOC-007R1
62x108 (D3)
TO-252-2 (DPAK)
TO-263-2 (D2PAK)
45x108 (EconoPACKTM 2)
TO-263-7L (7L D2PAK)
QFN 3.3 TO-220-2 and TO-220 Isolated
TO-247TO-220-F2 (Full Pack)
65x110 (High Performance 65mm)
TO-247-4L
62x108 48x94
50x12067x131
80x110 SuperMini DIP
62x122
130x140
56x110
36x72 (Flow 1B)
35x37 (Flow 0B)
47x108(Flow 2)