sipm interconnections to 3d electronics

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SiPM Interconnections to 3D electronics Jelena Ninkovic Max-Planck-Institute for Physics, Munich, Germany SiMPs basics Why do we need 3D interconnections • Concept of SiPMs with Bulk Integrated Quench Resistors – SiPMl concept What we want to do

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SiPM Interconnections to 3D electronics. SiMPs basics Why do we need 3D interconnections Concept of SiPMs with Bulk Integrated Quench Resistors – SiPMl concept What we want to do . Jelena Ninkovic Max-Planck-Institute for Physics, Munich, Germany. - PowerPoint PPT Presentation

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Page 1: SiPM  Interconnections to 3D electronics

SiPM Interconnections to 3D electronics

Jelena NinkovicMax-Planck-Institute for Physics, Munich, Germany

• SiMPs basics

• Why do we need 3D interconnections

• Concept of SiPMs with Bulk Integrated Quench Resistors – SiPMl concept

• What we want to do

Page 2: SiPM  Interconnections to 3D electronics

2Jelena Ninkovic

What is a Silicon Photomultiplier - SiPM

• An array of avalanche photodiodes • operated in Geiger mode binary device• passive quenching by integrated resistor• read out in parallel signal is sum of all fired cells

AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013

Page 3: SiPM  Interconnections to 3D electronics

MEPhI/Pulsar (Moscow) - DolgosheinCPTA (Moscow) - GolovinZecotek(Singapore) - SadygovAmplification Technologies (Orlando, USA)Hamamatsu Photonics (Hamamatsu, Japan)SensL(Cork, Ireland)AdvanSiD (former FBK-irst Trento, Italy)STMicroelectronics (Italy)KETEK (Munich)RMD (Boston, USA) ExcelitasTechnologies (former PerkinElmer)MPI Semiconductor Laboratory (Munich)Novel Device Laboratory (Beijing, China)Philips (Netherlands)

Every producer uses its own name for this type of device: MRS APD, MAPD, SiPM, SSPM, MPPC, SPM, DAPD, PPD, SiMPl , dSiPM

………

What is available?

Jelena Ninkovic AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013 3

Page 4: SiPM  Interconnections to 3D electronics

Why do we need 3D integration?

Jelena Ninkovic AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013 4

Page 5: SiPM  Interconnections to 3D electronics

Components of a SiPM cell

Jelena Ninkovic AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013 5

Page 6: SiPM  Interconnections to 3D electronics

SiPM cell components SiMPl approach

n+

p+

AD

RQ

CD

CC

Vbias

Jelena Ninkovic 6AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013

Concept developed at

Max-Planck-Society Semiconductor Laboratory

Page 7: SiPM  Interconnections to 3D electronics

SiPM cell components SiMPl approach

n+

p+n

high field

AD

RQ

CD

CC

Vbias

Jelena Ninkovic 7AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013

Page 8: SiPM  Interconnections to 3D electronics

SiPM cell components SiMPl approach

n+

p+

n- non-depleted

region

n- non-depleted

region

n- depleted gap

region

n

high field

AD

RQ

CD

CC

Vbias

Jelena Ninkovic 8AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013

Page 9: SiPM  Interconnections to 3D electronics

SiPM cell components SiMPl approach

n+

p+

n- non-depleted

region

n- non-depleted

region

n- depleted gap

region

n

high field

AD

RQ

CD

CC

Vbias

Sensor wafer

Handle wafer

SOI wafers

Jelena Ninkovic 9AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013

Page 10: SiPM  Interconnections to 3D electronics

AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013 10Jelena Ninkovic

Advantages and Disadvantages

Advantages:• no need of polysilicon• free entrance window for light, no metal necessary within the array• coarse lithographic level• simple technology• inherent diffusion barrier against minorities in the bulk -> less optical

cross talk

Drawbacks:• required depth for vertical resistors does not match wafer thickness• wafer bonding is necessary for big pixel sizes • significant changes of cell size requires change of the material • vertical ‘resistor‘ is a JFET -> parabolic IV -> longer recovery times

Page 11: SiPM  Interconnections to 3D electronics

AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013 11Jelena Ninkovic

Prototype production

High homogeneity over big distances! 6 100 cells arrays placed over

6mm distance

High homogeneity within the array!

6mm

6mm

30x30 arraysensitive area free

High linearity!

Page 12: SiPM  Interconnections to 3D electronics

DV=2V

DV=1V

Hamamatsu MPPC

SiMPL

DV=2V

DV=1V

Fill factor & Cross Talk & Photon Detection Efficiency

Pitch / Gap Fill factor

Cross talkmeas.

(DV=2V)130mm /

10mm85.2% 29%

130mm / 11mm

83.8% 27%

130mm / 12mm

82.4% 25%

130mm / 20mm

71.6% 15%

Jelena Ninkovic AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013 12

Fill factor limited only by the cross talk suppression need!

No special cross talk suppression

technology applied

just intrinsic property of SiMPl

devices

Page 13: SiPM  Interconnections to 3D electronics

@223K

Detection of particles

Jelena Ninkovic AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013 13

Excellent time stamping due to the fast avalanche process (<1ns)

MIP gives about 80pairs/mm huge signal in SiPM allows operation at small DV

Reduction of dark rate and cross talk by at least an order of magnitude

<10% GE still gives

high MIP detectionefficiency

Page 14: SiPM  Interconnections to 3D electronics

n+

n- non-depleted

region

n- non-depleted

region

n- depleted gap

region

n

Next generation SiMPl devices

Jelena Ninkovic AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013 14

Page 15: SiPM  Interconnections to 3D electronics

n+

n- non-depleted

region

n- non-depleted

region

n- depleted gap

region

n

Next generation SiMPl devices

Jelena Ninkovic AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013 15

Page 16: SiPM  Interconnections to 3D electronics

n+

n- non-depleted

region

n- non-depleted

region

n- depleted gap

region

n

Next generation SiMPl devices

Jelena Ninkovic AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013 16

Logic, TDC, Photon counter

Cell electronics

Cell electronics

Topologically flat surface

High fill factor

Adjustable resistor valueLow RC -> very fast

Active recharge

Ability to turn off noisy pixels

Pitch limited by the bump bondingCell electronics: Active quenching, Bias control, Cell activity, Digital output

Page 17: SiPM  Interconnections to 3D electronics

n+

n- non-depleted

region

n- non-depleted

region

n- depleted gap

region

n

Next generation SiMPl devices

Jelena Ninkovic AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013 17

Topologically flat and free surface

High fill factor

Sensitive to light

Page 18: SiPM  Interconnections to 3D electronics

n+

n- non-depleted

region

n- non-depleted

region

n- depleted gap

region

n

Next generation SiMPl devices

Jelena Ninkovic AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013 18

Topologically flat and free surface

High fill factor

Sensitive to light

Page 19: SiPM  Interconnections to 3D electronics

n+

n- non-depleted

region

n- non-depleted

region

n- depleted gap

region

n

Next generation SiMPl devices

Jelena Ninkovic AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013 19

Logic, TDC, Photon counter

Cell electronics

Cell electronics

Topologically flat and free surface

High fill factor

Sensitive to light

Page 20: SiPM  Interconnections to 3D electronics

n+

n- non-depleted

region

n- non-depleted

region

n- depleted gap

region

n

Next generation SiMPl devices

Jelena Ninkovic AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013 20

TDC, Photon counter, active recharge

Cell electronics

Cell electronics

Topologically flat and free surface

High fill factor

Sensitive to light

sensorwafer

handle wafer

on sensor wafer2. bond sensor wafer

to handle wafer3. thin sensor side

to desired thickness4. process SiMPl arrays

on top side

sensorwafer

handle wafer

1. Structured implant on backside 5. Etching backside & flip chipping on back side

Page 21: SiPM  Interconnections to 3D electronics

n+

n- non-depleted

region

n- non-depleted

region

n- depleted gap

region

n

Next generation SiMPl devices

Jelena Ninkovic AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013 21

TDC, Photon counter, active recharge

Cell electronics

Cell electronics

Topologically flat and free surface

High fill factor

Sensitive to light

sensorwafer

handle wafer

on sensor wafer2. bond sensor wafer

to handle wafer3. thin sensor side

to desired thickness4. process SiMPl arrays

on top side

sensorwafer

handle wafer

1. Structured implant on backside 5. Etching backside & flip chipping on back side

Page 22: SiPM  Interconnections to 3D electronics

n+

n- non-depleted

region

n- non-depleted

region

n- depleted gap

region

n

Next generation SiMPl devices

Jelena Ninkovic AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013 22

TDC, Photon counter, active recharge

Cell electronics

Cell electronics

Topologically flat and free surface

High fill factor

Sensitive to light

sensorwafer

handle wafer

on sensor wafer2. bond sensor wafer

to handle wafer3. thin sensor side

to desired thickness4. process SiMPl arrays

on top side

sensorwafer

handle wafer

1. Structured implant on backside 5. Etching backside & flip chipping on back side

Page 23: SiPM  Interconnections to 3D electronics

Jelena Ninkovic AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013 23

Thanks for the attention!!