smd type ic transistors - kexin.com.cn · storage time tstg 400 fall time tr 50 common base output...

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www.kexin.com.cn 1 SMD Type Transistors Features Adoption of FBET process. High breakdown voltage : VCEO=-50V. Large current capacitiy and high fT. Ultrasmall-sized package permitting sets to be smallsized, slim. Absolute Maximum Ratings Ta = 25 t i n U g n i t a R l o b m y S r e t e m a r a P V e g a t l o v e s a b - r o t c e l l o C CBO -60 V V e g a t l o v r e t t i m e - r o t c e l l o C CEO -50 V V e g a t l o v e s a b - r e t t i m E EBO -5 V I t n e r r u c r o t c e l l o C C -500 mA I ) e s l u p ( t n e r r u c r o t c e l l o C CP -800 mA P n o i t a p i s s i d r o t c e l l o C C 200 mW T e r u t a r e p m e t n o i t c m u J j 150 T e r u t a r e p m e t e g a r o t S stg -55 to +150 Electrical Characteristics Ta = 25 PNP Transistors 2SA1338 Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -100 μA， IE=0 -60 Collector- emitter breakdown voltage VCEO Ic= -1 mA， IB=0 -50 Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 -5 Collector-base cut-off current ICBO VCB= -40 V , IE=0 -100 Emitter cut-off current IEBO VEB= -4V , IC=0 -100 Collector-emitter saturation voltage VCE(sat) IC=-100 mA, IB=- 10mA 0.15 0.4 Base - emitter saturation voltage VBE(sat) IC= -100 mA, IB= -10mA 0.8 1.2 DC current gain hFE VCE= -5V, IC= -10mA 100 560 Turn-on time ton 70 Storage time tstg 400 Fall time tr 50 Common base output capacitance Cob VCB= -10V , IC= -50mA 5.6 pF Transition frequency fT VCE= -10V ,f=1MHz 200 MHz VCC=-20V,IC=-10|B1=-10|B2=100mA V V ns nA ■ Classification of hfe ● Complementary to 2SC3392 Type 2SA1338-AL4 2SA1338-AL5 2SA1338-AL6 2SA1338-AL7 Range 100-200 140-280 200-400 280-560 Marking AL4 AL5 AL6 AL7 0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2.4 +0.1 -0.1 1.3 +0.1 -0.1 0-0.1 0.38 +0.1 -0.1 0.97 +0.1 -0.1 0.55 0.4 1.Base 2.Emitter 3.collector 1 2 3 Unit: mm SOT-23 0.1 +0.05 -0.01

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Page 1: SMD Type IC Transistors - kexin.com.cn · Storage time tstg 400 Fall time tr 50 Common base output capacitance Cob VCB= -10V, IC= -50mA 5.6 pF Transition frequency fT VCE= -10V,f=1MHz

SMD Type IC

www.kexin.com.cn 1

SMD Type Transistors

FeaturesAdoption of FBET process.

High breakdown voltage : VCEO=-50V.

Large current capacitiy and high fT.

Ultrasmall-sized package permitting sets

to be smallsized, slim.

Absolute Maximum Ratings Ta = 25

tinUgnitaRlobmySretemaraP

Vegatlovesab-rotcelloC CBO -60 V

Vegatlovrettime-rotcelloC CEO -50 V

Vegatlovesab-rettimE EBO -5 V

ItnerrucrotcelloC C -500 mA

I)eslup(tnerrucrotcelloC CP -800 mA

PnoitapissidrotcelloC C 200 mW

TerutarepmetnoitcmuJ j 150

TerutarepmetegarotS stg -55 to +150

Electrical Characteristics Ta = 25

PNP Transistors 2SA1338

Parameter Symbol Test Conditions Min Typ Max Unit

Collector- base breakdown voltage VCBO Ic= -100 μA， IE=0 -60

Collector- emitter breakdown voltage VCEO Ic= -1 mA， IB=0 -50

Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 -5

Collector-base cut-off current ICBO VCB= -40 V , IE=0 -100

Emitter cut-off current IEBO VEB= -4V , IC=0 -100

Collector-emitter saturation voltage VCE(sat) IC=-100 mA, IB=- 10mA 0.15 0.4

Base - emitter saturation voltage VBE(sat) IC= -100 mA, IB= -10mA 0.8 1.2

DC current gain hFE VCE= -5V, IC= -10mA 100 560

Turn-on time ton 70

Storage time tstg 400

Fall time tr 50

Common base output capacitance Cob VCB= -10V

, IC= -50mA

5.6 pF

Transition frequency fT VCE= -10V

,f=1MHz

200 MHz

VCC=-20V,IC=-10|B1=-10|B2=100mA

V

V

ns

nA

■ Classification of hfe

● Complementary to 2SC3392

Type 2SA1338-AL4 2SA1338-AL5 2SA1338-AL6 2SA1338-AL7

Range 100-200 140-280 200-400 280-560

Marking AL4 AL5 AL6 AL7

0.4 +0.1-0.1

2.9 +0.1-0.1

0.95 +0.1-0.1

1.9 +0.1-0.1

2.4

+0.1

-0.1

1.3

+0.1

-0.1

0-0.1

0.38

+0.1

-0.1

0.97

+0.1

-0.1

0.55

0.4

1.Base

2.Emitter

3.collector

1 2

3

Unit: mmSOT-23

0.1 +0.05-0.01

Page 2: SMD Type IC Transistors - kexin.com.cn · Storage time tstg 400 Fall time tr 50 Common base output capacitance Cob VCB= -10V, IC= -50mA 5.6 pF Transition frequency fT VCE= -10V,f=1MHz

SMD Type

www.kexin.com.cn2

Transistors

PNP Transistors 2SA1338

■ Typical Characterisitics

Page 3: SMD Type IC Transistors - kexin.com.cn · Storage time tstg 400 Fall time tr 50 Common base output capacitance Cob VCB= -10V, IC= -50mA 5.6 pF Transition frequency fT VCE= -10V,f=1MHz

SMD Type

www.kexin.com.cn 3

Transistors

PNP Transistors 2SA1338

■ Typical Characterisitics

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