smd type mosfet · 2019. 7. 5. · smd type 4 mosfet. typical characterisitics 0 2 4 6 8 1 0 0 5 10...
TRANSCRIPT
SMD Type
www.kexin.com.cn 1
MOSFET
P-Channel MOSFETAO4407
Features VDS (V) =-30V
ID =-12 A (VGS =-20V)
RDS(ON) ＜ 13mΩ (VGS =-20V)
RDS(ON) ＜ 14mΩ (VGS =-10V)
RDS(ON) ＜ 30mΩ (VGS =-5V)
SOP-8
0.21
+0.0
4-0
.02
1.50 0.15
1 Source
2 Source
3 Source
4 Gate
5 Drain
6 Drain
7 Drain
8 Drain
Absolute Maximum Ratings Ta = 25
Symbol Rating Unit
VDS -30
VGS ±25
TA=25°C -12
TA=70°C -10
IDM -60
IAS,IAR 26
TA=25°C 3.1 W
TA=70°C 2
Avalanche energy L=0.3mH EAS,EAR 101 mJ
t ≤ 10s 40
Steady-State 75
Thermal Resistance.Junction- to-Case Steady-State RthJC 24
TJ 150
Tstg -55 to 150
Junction Temperature
Junction Storage Temperature Range
Continuous Drain Current ID
Power Dissipation PD
Avalanche Current
Thermal Resistance.Junction- to-Ambient RthJA
Pulsed Drain Current A
Parameter
Drain-Source Voltage
Gate-Source VoltageV
/W
G
D
S
G
D
S
SMD Type
www.kexin.com.cn2
MOSFET
Electrical Characteristics Ta = 25Parameter Symbol Test Conditions Min Typ Max Unit
Drain-Source Breakdown Voltage VDSS ID=-250μA, VGS=0V -30 V
VDS=-30V, VGS=0V -1
VDS=-30V, VGS=0V, TJ=55 -5
Gate-Body leakage current IGSS VDS=0V, VGS=±25V ±100 nA
Gate Threshold Voltage VGS(th) VDS=VGS ID=-250μA -1.7 -2.8 V
VGS=-20V, ID=-12A 13
VGS=-10V, ID=-12A 14
VGS=-10V, ID=-12A TJ=125 19
VGS=-5V, ID=-7A 30
On state drain current ID(ON) VGS=-10V, VDS=-5V -60 A
Forward Transconductance gFS VDS=-5V, ID=-10.5A 27 S
Input Capacitance Ciss 2060 2600
Output Capacitance Coss 370
Reverse Transfer Capacitance Crss 295
Gate resistance Rg VGS=0V, VDS=0V, f=1MHz 1.2 2.4 3.6 Ω
Total Gate Charge Qg 24 30 36
Gate Source Charge Qgs 4.6
Gate Drain Charge Qgd 10
Turn-On DelayTime td(on) 11
Turn-On Rise Time tr 9.4
Turn-Off DelayTime td(off) 24
Turn-Off Fall Time tf 12
Body Diode Reverse Recovery Time trr 30 40
Body Diode Reverse Recovery Charge Qrr 22 nC
Maximum Body-Diode Continuous Current IS -4 A
Diode Forward Voltage VSD IS=-1A,VGS=0V -1 V
VGS=0V, VDS=-15V, f=1MHz
VGS=-10V, VDS=-15V, ID=-12A
IF=-12A, dI/dt=100A/μs
pF
nC
ns
Zero Gate Voltage Drain Current IDSS μA
mΩ
VGS=-10V, VDS=-15V, RL=1.25Ω,RG=3Ω
RDS(On) Static Drain-Source On-Resistance
Marking
4407
KC****Marking
P-Channel MOSFETAO4407
SMD Type
www.kexin.com.cn 3
MOSFET
Typical Characterisitics
0
20
40
60
80
1 2 3 4 5 6-I D
(A)
VGS(Volts)Figure 2: Transfer Characteristics (Note E)
0
5
10
15
20
25
30
0 5 10 15 20
RD
S(O
N)(m
ΩΩ ΩΩ)
-ID (A)Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
0.8
1
1.2
1.4
1.6
0 25 50 75 100 125 150 175
Nor
mal
ized
On-
Res
ista
nce
Temperature (°C)Figure 4: On-Resistance vs. Junction Temperature
(Note E)
VGS=-10VID=-12A
VGS=-5VID=-7A
25°C125°C
VDS=-5V
VGS=-5V
0
20
40
60
80
0 1 2 3 4 5
-I D(A
)
-VDS (Volts)Fig 1: On-Region Characteristics (Note E)
VGS=-3.5V
-4V
-6V-10V
-4.5V
-5V
VGS=-10V
40
0
20
40
60
80
1 2 3 4 5 6-I D
(A)
VGS(Volts)Figure 2: Transfer Characteristics (Note E)
0
5
10
15
20
25
30
0 5 10 15 20
RD
S(O
N)(m
ΩΩ ΩΩ)
-ID (A)Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0 0.2 0.4 0.6 0.8 1.0 1.2
I S(A
)
-VSD (Volts)Figure 6: Body-Diode Characteristics (Note E)
25°C
125°C
0.8
1
1.2
1.4
1.6
0 25 50 75 100 125 150 175
Nor
mal
ized
On-
Res
ista
nce
Temperature (°C)
(Note E)
VGS=-10VID=-12A
VGS=-5VID=-7A
5
10
15
20
25
30
2 4 6 8 10
RD
S(O
N)(m
ΩΩ ΩΩ)
-VGS (Volts)Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
25°C125°C
VDS=-5V
VGS=-5V
ID=-12A
25°C
125°C
0
20
40
60
80
0 1 2 3 4 5
-I D(A
)
-VDS (Volts)Fig 1: On-Region Characteristics (Note E)
VGS=-3.5V
-4V
-6V-10V
-4.5V
-5V
VGS=-10V
P-Channel MOSFETAO4407
SMD Type
www.kexin.com.cn4
MOSFET
.
Typical Characterisitics
0
2
4
6
8
10
0 5 10 15 20 25 30
-VG
S(V
olts
)
Qg (nC)Figure 7: Gate-Charge Characteristics
0
500
1000
1500
2000
2500
3000
0 5 10 15 20 25 30C
apac
itanc
e (p
F)
-VDS (Volts)Figure 8: Capacitance Characteristics
Ciss
Coss
Crss
VDS=-15VID=-12A
1
10
100
1000
10000
0.00001 0.001 0.1 10 1000
Pow
er (W
)
Pulse Width (s)Figure 11: Single Pulse Power Rating Junction-to-
Ambient (Note F)
TA=25°C
0.0
0.1
1.0
10.0
100.0
1000.0
0.01 0.1 1 10 100
I D(A
mps
)
VDS (Volts)
Figure 10: Maximum Forward Biased Safe Operating Area (Note F)
10µs
10s
1ms
DC
RDS(ON) limited
TJ(Max)=150°CTA=25°C
100µs
10ms
0
2
4
6
8
10
0 5 10 15 20 25 30
-VG
S(V
olts
)
Qg (nC)Figure 7: Gate-Charge Characteristics
0
500
1000
1500
2000
2500
3000
0 5 10 15 20 25 30C
apac
itanc
e (p
F)
-VDS (Volts)Figure 8: Capacitance Characteristics
Ciss
Coss
Crss
VDS=-15VID=-12A
1
10
100
1000
10000
0.00001 0.001 0.1 10 1000
Pow
er (W
)
Pulse Width (s)Figure 11: Single Pulse Power Rating Junction-to-
Ambient (Note F)
TA=25°C
0.0
0.1
1.0
10.0
100.0
1000.0
0.01 0.1 1 10 100
I D(A
mps
)
VDS (Volts)
Figure 10: Maximum Forward Biased Safe Operating Area (Note F)
10µs
10s
1ms
DC
RDS(ON) limited
TJ(Max)=150°CTA=25°C
100µs
10ms
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Z θθ θθJA
Nor
mal
ized
Tra
nsie
nt
Ther
mal
Res
ista
nce
Pulse Width (s)Figure 12: Normalized Maximum Transient Thermal Impedance (Note F)
D=Ton/TTJ,PK=TA+PDM.ZθJA.RθJA
TonT
PD
In descending orderD=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=75°C/W
Single Pulse
P-Channel MOSFETAO4407