SMD Type

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MOSFET

Features VDS (V) = 100V

ID = 4A (VGS = 10V)

RDS(ON) ＜ 68mΩ (VGS = 10V)

RDS(ON) ＜ 94mΩ (VGS = 4.5V)

SOP-8

0.21

+0.0

4-0

.02

1.50 0.15

Unit:mm

1 S2 2 G23 S14 G1

5 D1 6 D17 D28 D2

Absolute Maximum Ratings Ta = 25

Symbol Rating Unit

VDS 100

VGS ±20

TA=25 4

TA=70 3

IDM 25

IAS 4

Avalanche Energy L=0.1mH EAS 0..8 mJ

TA=25 2

TA=70 1.3

t ≤ 10s 62.5

Steady-State 90

RthJL 40

TJ 150

Tstg -55 to 150

Junction Temperature

Storage Temperature Range

PD W Power Dissipation

/W

Thermal Resistance.Junction- to-Lead

Thermal Resistance.Junction- to-Ambient RthJA

Parameter

Continuous Drain Current ID

Drain-Source Voltage

Gate-Source Voltage

Avalanche Current

A

V

Pulsed Drain Current

G1

D1

S1

G2

D2

S2

Pb−Free Package May be Available. The G−Suffix Denotes a

Pb−Free Lead Finish

Dual N-Channel MOSFETAO4892-HF (KO4892-HF)

SMD Type

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MOSFET

Electrical Characteristics Ta = 25

Parameter Symbol Test Conditions Min Typ Max Unit

Drain-Source Breakdown Voltage VDSS ID=250μA, VGS=0V 100 V

VDS=100V, VGS=0V 1

VDS=100V, VGS=0V, TJ=55 5

Gate-Body Leakage Current IGSS VDS=0V, VGS=±20V ±100 nA

Gate Threshold Voltage VGS(th) VDS=VGS , ID=250uA 1.7 2.8 V

VGS=10V, ID=4A 68

VGS=10V, ID=4A TJ=125 126

VGS=4.5V, ID=3A 94

On State Drain Current ID(ON) VGS=10V, VDS=5A 25 A

Forward Transconductance gFS VDS=5V, ID=4A 12.5 S

Input Capacitance Ciss 415

Output Capacitance Coss 32

Reverse Transfer Capacitance Crss 3

Gate Resistance Rg VGS=0V, VDS=0V, f=1MHz 0.7 2.1 Ω

Total Gate Charge (10V) 6.5 12

Total Gate Charge (4.5V) 3 6

Gate Source Charge Qgs 1.5

Gate Drain Charge Qgd 1.5

Turn-On DelayTime td(on) 4

Turn-On Rise Time tr 2

Turn-Off DelayTime td(off) 15

Turn-Off Fall Time tf 2

Body Diode Reverse Recovery Time trr 16

Body Diode Reverse Recovery Charge Qrr 44 nC

Maximum Body-Diode Continuous Current IS 2.5 A

Diode Forward Voltage VSD IS=1A,VGS=0V 1 V

ns VGS=10V, VDS=50V, RL=12.5Ω, RGEN=3Ω

IF= 4A, dI/dt= 500A/us

VGS=0V, VDS=50V, f=1MHz

Qg

Zero Gate Voltage Drain Current IDSS uA

mΩRDS(On) Static Drain-Source On-Resistance

VGS=10V, VDS=50V, ID=4A

pF

nC

Note.The static characteristics in Figures 1 to 6 are obtained using <300us pulses, duty cycle 0.5% max.

Marking4892

KA**** F

Marking

Dual N-Channel MOSFETAO4892-HF (KO4892-HF)

SMD Type

www.kexin.com.cn 3

MOSFET

Typical Characterisitics

0

5

10

15

20

1 2 3 4 5

I D(A

)

VGS(Volts)Figure 2: Transfer Characteristics (Note E)

40

50

60

70

80

90

100

0 2 4 6 8 10

RD

S(O

N)(m

ΩΩ ΩΩ)

ID (A)Figure 3: On-Resistance vs. Drain Current and Gate

Voltage (Note E)

0.8

1

1.2

1.4

1.6

1.8

2

2.2

0 25 50 75 100 125 150 175

Nor

mal

ized

On-

Res

ista

nce

Temperature (°C)Figure 4: On-Resistance vs. Junction Temperature

VGS=4.5VID=3A

VGS=10VID=4A

25°C

125°C

VDS=5V

VGS=4.5V

VGS=10V

0

5

10

15

20

25

0 1 2 3 4 5

I D(A

)

VDS (Volts)Fig 1: On-Region Characteristics (Note E)

VGS=3.0V

6V10V

3.5V

4.5V

1.0E-05

1.0E-04

1.0E-03

1.0E-02

1.0E-01

1.0E+00

1.0E+01

1.0E+02

0.0 0.2 0.4 0.6 0.8 1.0 1.2

I S(A

)

VSD (Volts)Figure 6: Body-Diode Characteristics (Note E)

25°C

125°C

20

40

60

80

100

120

140

160

180

2 4 6 8 10

RD

S(O

N)(m

ΩΩ ΩΩ)

VGS (Volts)Figure 5: On-Resistance vs. Gate-Source Voltage

(Note E)

ID=4A

25°C

125°C

Dual N-Channel MOSFETAO4892-HF (KO4892-HF)

SMD Type

www.kexin.com.cn4

MOSFET

.

Typical Characterisitics

0

2

4

6

8

10

0 2 4 6 8

VG

S(V

olts

)

Qg (nC)Figure 7: Gate-Charge Characteristics

0

100

200

300

400

500

0 20 40 60 80 100

Cap

acita

nce

(pF)

VDS (Volts)Figure 8: Capacitance Characteristics

Ciss

Coss

Crss

VDS=50VID=4A

0.0

0.1

1.0

10.0

100.0

0.01 0.1 1 10 100 1000

I D(A

mps

)

VDS (Volts)

Figure 10: Maximum Forward Biased

10µs

10s

1ms

DC

RDS(ON) limited

TJ(Max)=150°CTA=25°C

100µs

10ms

1

10

100

001011

I AR

(A) P

eak

Ava

lanc

he C

urre

nt

Time in avalanche, tA (µµµµs)Figure 12: Single Pulse Avalanche capability

(Note C)

TA=25°C

TA=125°C

1

10

100

1000

10000

011.0100.010000.0 1000

Pow

er (W

)

Pulse Width (s)Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F)

TA=25°C

Figure 10: Maximum Forward Biased Safe Operating Area (Note F)

Dual N-Channel MOSFETAO4892-HF (KO4892-HF)

SMD Type

www.kexin.com.cn 5

MOSFET

Typical Characterisitics

0.001

0.01

0.1

1

10

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000

Z θθ θθJA

Nor

mal

ized

Tra

nsie

nt

Ther

mal

Res

ista

nce

Pulse Width (s)Figure 12: Normalized Maximum Transient Thermal Impedance (Note F)

Single Pulse

D=Ton/TTJ,PK=TA+PDM.ZθJA.RθJA

TonT

PD

In descending orderD=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

RθJA=90°C/W

Dual N-Channel MOSFETAO4892-HF (KO4892-HF)