sod-523 plastic-encapsulate diodes - ican-hk.com mount package ideally suited for automatic...

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOD-523 Plastic-Encapsulate Diodes

1N4148WT FAST SWITCHING DIODE

FEATURES Small Package Low Reverse Current Fast Switching Speed Surface Mount Package Ideally Suited for Automatic Insertion MARKING:T4 MAXIMUM RATINGS ( Ta=25 unless otherwise noted )

Symbol Parameter Value Unit VRM Non-Repetitive Peak Reverse Voltage 100 V

VR Reverse Voltage

VRRM Peak Repetitive Reverse Voltage

VRWM Working Peak Reverse Voltage

75 V

VR(RMS) RMS Reverse Voltage 53 V

IO Average Rectified Output Current 125 mA

IFM Forward Continuous Current 250 mA

Peak Forward Surge Current@1μs 2 A IFSM

Peak Forward Surge Current@1s 1 A

PD Power Dissipation 150 mW

RΘJA Thermal Resistance from Junction to Ambient 833 /W

Tj Junction Temperature 150

Tstg Storage Temperature -55~+150

ELECTRICAL CHARACTERISTICS(Ta=25 unless otherwise specified)

Parameter Symbol Test conditions Min Typ Max Unit

Reverse voltage V(BR) IR=1μA 75 V

VR=75V 1 µA Reverse current IR

VR=20V 25 nA

IF=1mA 0.715 V

IF=10mA 0.855 V

IF=50mA 1 V Forward voltage VF

IF=150mA 1.25 V

Total capacitance Ctot VR=0V,f=1MHz 2 pF

Reverse recovery time trr IF= IR =10mA, Irr=0.1*IR,RL=100Ω 4 ns

SOD-523

B,Mar,2013

0 25 50 75 100 125 1500

50

100

150

200

0.0 0.2 0.4 0.6 0.8 1.0 1.20.01

0.1

1

10

100

0 20 40 60 801

10

100

1000

0 5 10 15 200.8

0.9

1.0

1.1

1.2

Forward Characteristics Reverse Characteristics

Power Derating CurvePO

WER

DIS

SIPA

TIO

N

PD

(mW

)

AMBIENT TEMPERATURE Ta ( )

1N4148WTTypical Characteristics

T a=1

00

T a=2

5

FOR

WA

RD

CU

RR

EN

T

I F (m

A)

FORWARD VOLTAGE VF (V)

200

Ta=100

Ta=25

REV

ERSE

CU

RR

ENT

IR

(nA)

REVERSE VOLTAGE VR (V)

Ta=25f=1MHz

Capacitance Characteristics


CAP

ACIT

ANC

E BE

TWEE

N T

ERM

INAL

SC

T (p

F)

B,Mar,2013



1N4448WT FAST SWITCHING DIODE

FEATURES Small Package Low Reverse Current Fast Switching Speed Surface Mount Package Ideally Suited for Automatic Insertion MARKING:T5 MAXIMUM RATINGS ( Ta=25 unless otherwise noted )

Symbol Parameter Value Unit VRM Non-Repetitive Peak Reverse Voltage 100 V

VR Reverse Voltage


VRWM Working Peak Reverse Voltage

75 V



IFM Forward Continuous Current 250 mA

Peak Forward Surge Current@1μs 2 A IFSM

Peak Forward Surge Current@1s 1 A







Reverse voltage V(BR)1 IR=5μA 75 V

VR=75V 1 µA

Reverse current IR VR=20V 25 nA

IF=5mA 0.715 V

IF=10mA 0.855 V


IF=150mA 1.25 V



SOD-523

A,Apr,2013

Reverse voltage V(BR)2 IR=100μA 100 V

Administrator

线条

Administrator

线条



1N4448X FAST SWITCHING DIODE FEATURES

MARKING: T5

Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25

Parameter Symbol Limit Unit

Non-Repetitive Peak Reverse Voltage VRM 100 V

Peak Repetitive Peak Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

VR

100

100

75

V

RMS Reverse Voltage VR(RMS) 53 V

Forward Continuous Current IFM 500 mA

Average Rectified Output Current IO 250 mA

Peak Forward Surge Current @t=1.0μs

@t =1.0s IFSM

4.0

2.0 A

Power Dissipation Pd 150 mW

Thermal Resistance from Junction to

Ambient RθJA 833 /W

Electrical Ratings @Ta=25

Parameter Symbol Min Typ Max Unit Conditions

V (BR)R 75 V IR=5μA Reverse breakdown voltage

V (BR)R 100 V IR=100μA

VF1 0.62 0.72 V IF=5mA Forward voltage

VF2 1.0 V IF=100mA

Reverse current IR 25 nA VR=20V

Capacitance between terminals CT 4 pF VR=0V,f=1MHz

Reverse recovery time trr 4 ns IF=IR=10mA

Irr=0.1XIR,RL=100Ω

SOD-523

B,Jan,2014

Storage Temperature TSTG -55~+150




1SS387 High Speed Switching Diode FEATURES

Small package

MARKING: G Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25


Peak reverse voltage VRM 85 V

DC reverse voltage VR 80 V

Peak forward current IFM 200 mA

Mean rectifying current IO 100 mA

Surge current (t=10ms) Isurge 1000 mA

Junction temperature Tj 150

Storage temperature Tstg -55~+150


Parameter Symbol Min. Typ. Max. Unit Conditions

VF1 0.62 V IF=1mA

VF2 0.75 V IF=10mA Forward voltage

VF3 1.2 V IF=100mA

IR1 0.1 μA VR=30V Reverse current

IR2 0.5 μA VR=80V

Capacitance between terminals CT 3.0 pF VR=0,f=1MHZ

Reverse recovery time trr 4 ns VR=6V,IF=10mA,RL=100Ω

SOD-523

A,Oct,2011



1SS400 High Speed Switching Diode FEATURES Small surface mounting type High speed High reliability with high surge current handing capability

MARKING:A


Parameter Symbol Limits Unit

Peak reverse voltage VRM 90 V

DC reverse voltage VR 80 V

Peak forward current IFM 225 mA

Mean rectifying current IO 100 mA

Surge current (1s) Isurge 500 mA

Junction temperature Tj 150

Storage temperature Tstg -55~+150


Parameter Symbol Min. Typ. Max. Unit Conditions

Forward voltage VF 1.2 V IF=100mA

Reverse current IR 0.1 μA VR=80V

Capacitance between terminals CT 3.0 pF VR=0.5V, f=1MHz

Reverse recovery time trr 4 ns VR=6V,IF=10mA,RL=100

SOD-523

A,May,2011

0 25 50 75 100 125 1500

50

100

150

200

0.0 0.2 0.4 0.6 0.8 1.0 1.20.01

0.1

1

10

100

0 20 40 60 801

10

100

1000

0 5 10 15 200.8

1.0

1.2


Power Derating CurveP

OW

ER

DIS

SIP

AT

ION

P

D

(m

W)


1SS400Typical Characteristics

Ta=1

00

Ta=2

5

FO

RW

AR

D C

UR

RE

NT

I F

(

mA

)


Ta=100

Ta=25

RE

VE

RS

E C

UR

RE

NT

I R

(

nA)


Ta=25f=1MHz



CA

PA

CIT

AN

CE

BE

TW

EE

N T

ER

MIN

ALS

CT

(pF

)

A,May,2011



BAS16X Swithching Diode FEATURES High-Speed Switching Applications Lead Finish: 100% Matte Sn ( Tin ) Qualified Reflow Temperature: 260 Extremely Small SOD-523 Package

MARKING: A6



DC Reverse Voltage VR 75 V

Forward Current IF 200 mA

Pak Forward Surge Current IFM(surge) 500 mA

Total Device Dissipation PD 150 mW

Thermal Resistance Junction to Ambient RθJA 833 /W

Junction and Storage Temperature Tj ,Tstg 150


Parameter Symbol Min Typ Max Unit Conditions

Reverse breakdown voltage V(BR) 75 IR=100uA

VF1 715 IF=1mA

VF2 855 IF=10mA

VF3 1000 IF=50mA Forward voltage

VF4 1250

mV

IF=150mA

Reverse recovery Time trr 6.0 ns IF=IR=10mAdc,RL=50Ω

Reverse current IR 1.0 μA VR=75V

Forward recovery voltage VFR 1.75 V IF=10mA, tr= 20ns

Diode capacitance CD 2.0 pF VR=0V,f=1MHZ

Stored charge QS 45 pC IF=10mA, VR=5.0V ,RL=500Ω

SOD-523

B,Apr,2012

0 25 50 75 100 125 1500

50

100

150

200

0.0 0.2 0.4 0.6 0.8 1.0 1.20.01

0.1

1

10

100

0 20 40 60 801

10

100

1000

0 5 10 15 200.8

1.0

1.2



WER

DIS

SIPA

TIO

N

PD

(mW

)


BAS16XTypical Characteristics

T a=1

00

T a=2

5

FOR

WA

RD

CU

RR

EN

T

I F (m

A)


150

Ta=100

Ta=25

REV

ERSE

CU

RR

ENT

IR

(nA)


Ta=25f=1MHz



CAP

ACIT

ANC

E BE

TWEE

N T

ERM

INAL

SC

T (p

F)

B,Apr,2012



BAS516 FAST SWITCHING DIODE

FEATURES Small Package Low Reverse Current Fast Switching Speed Surface Mount Package Ideally Suited for Automatic Insertion MARKING:61 MAXIMUM RATINGS ( Ta=25 unless otherwise noted )

Symbol Parameter Value Unit

VRM Non-Repetitive Peak Reverse Voltage 100 V


VRWM Working Peak Reverse Voltage 75 V



Peak Forward Surge Current @t=1μs 4 A IFSM

Peak Forward Surge Current @t=1s 0.5 A








VR=25V 30 nA Reverse current IR

VR=75V 1 μA

IF=1mA 0.715 V

IF=10mA 0.855 V


IF=150mA 1.25 V



SOD-523

C,Mar,2013

0 25 50 75 100 125 1500

50

100

150

200

0.0 0.2 0.4 0.6 0.8 1.0 1.20.01

0.1

1

10

100

0 25 50 751

10

100

1000

10000

0 5 10 15 200.7

0.8

0.9

1.0

1.1



WER

DIS

SIPA

TIO

N

PD

(mW

)


BAS516Typical Characteristics

T a=1

00

T a=2

5

FOR

WA

RD

CU

RR

EN

T

I F (m

A)


250

Ta=100

Ta=25

REV

ERSE

CU

RR

ENT

IR

(nA)


Ta=25f=1MHz



CAP

ACIT

ANC

E BE

TWEE

N T

ERM

INAL

SC

T (p

F)

C,Mar,2013



BAS716 FAST SWITCHING DIODE

FEATURES Small Package Low Reverse Current Fast Switching Speed Surface Mount Package Ideally Suited for Automatic Insertion MARKING:S1 MAXIMUM RATINGS ( Ta=25 unless otherwise noted )

Symbol Parameter Value Unit

VRM Non-Repetitive Peak Reverse Voltage 100 V


VRWM Working Peak Reverse Voltage 75 V



Peak Forward Surge Current @t=8.3ms 1 A IFSM








VR=75V 5 nA Reverse current IR

VR=100V 80 nA

IF=1mA 0.9 V

IF=10mA 1 V

IF=50mA 1.1 V Forward voltage VF

IF=150mA 1.25 V


Reverse recovery time trr IF= IR =10mA, Irr=0.1*IR 3 μs

SOD-523

A-2,Sep,2013

Administrator

椭圆形

sod-523 plastic-encapsulate diodes - ican-hk.com mount package ideally suited for automatic...

Documents