solar energy ongoing project by alejandro pérez
TRANSCRIPT
INDUCIS: A Transfer of Knowledgeexperience between Industry and Academia
Alejandro Pérez Rodríguez, Victor Izquierdo-Roca, Edgardo Saucedo, Cristina Insignares-Cuello, Florian Oliva
IREC – Catalonia Institute for Energy Research
Salvador Jaime-Ferrer, Pierre-Philip Grand, Cedric Broussillou
NEXCIS Photovoltaic Technology, Rousset, France
• IREC: Solar Energy Materials & Systems Group
• INDUCIS:
– Research Objectives
– Scientific Highlights & Main results
• NEXCIS baseline process
• Quality assessment & process monitoring
• Conclusions
INDUCIS: A Transfer of Knowledgeexperience between Industry and
Academia
Catalonia Institute for Energy
Research (IREC)
Founded in 2008, and located in Barcelona,
Spain:
Aim: “..to contribute to the objective of
creating a more sustainable future for
energy usage and consumption, keeping in
mind the economic competitivity and
providing society with the maximum level of
energy security…”
Main activity: Research for Technology
Development
Six main areas:
- Advanced materials for energy
- Lighting
- Offshore wind energy
- Electrical engineering
- Bioenergy and biofuels
-Thermal energy and building performance
3
- Solar Energy Materials and systems
- Functional nanomaterials
- Materials and catalysts
- Nanoionics and fuel cells
- Energy storage and harvesting
• Advanced characterisation processes in
chalcopyrite technologies: Development of
methodologies suitable for Quality Control &
Process Monitoring:
Light scattering (Raman, elastic scattering)
based strategies for ex-situ/in-situ (real time)
process monitoring
4Main RESEARCH LINES & ACTIVITIES
• Sustainable high efficiency chalcogenide based
technologies
Development of kesterite (Cu2ZnSn(S,Se)4) solar
cells for sustainable PV technologies.
Ener
gy (
eV)
E
Absorber
Buffer
ZnO
0
1
-1
-2
-3
0 1 2 3x (mm)
Ef
E
Thin film solar cells (a-Si, CdTe, CIGS)
CIGS: championship efficiency
(comparable to multicrystalline Si)
Record = 20.4% (EMPA, 2013) on
flexible substrate and = 21.7% (ZSW
2014) on glass substrate
compatibility with processing on low
weigh polymeric flexible substrates
higher than record from
multicrystalline Si (20.4%)
• CIGS already at industrial implementation stage (mainly with PVD
based processes)
• In spite of complexity of market scenario (overproduction, lowering of
protective tariffs, strong competence with Chinese PV production),
significant growth of the CIGS modules world production from about
150 MW/y in 2009 up to over 2 GW/y in 2011.
• Strongly suited for development/production of low weigh flexible
modules (BIPV/BAPV )
Thin film PV technologies: Overview
CIGS technologies; Competitiveness still compromised by:
• use of higher cost PVD processes (low process yield, low material
use rate, very high investment costs),
• commercial module efficiency still in 13% range (in front of 15%
(multicristalline Si based modules))
Strong need for development of tools suitable for Quality Control &
Process Monitoring compatible with their industrial implementation art
in-situ (real time)/on-line levels:
Increase of process yield
Improvement of unifomity of processes when scaled-up to large
area substrates
Interest in development of alternative low cost routes, based on
chemical/electrochemical approaches, with improved device/module
efficiency:
decrease of CAPEX (one order of magnitude)
very high material use rate (> 90%)
compatible with high throughput (≥ 1 m/min)
Activities & Projects: Thin Film CIGS PV Technologies
Research Objectives
a) To decrease the gap existing between the efficiency of ED-based
solar cells in relation to devices based with conventional higher cost
PVD processes:
Need for a special effort in improvement of degree of control
and homogeneity of chemical composition and structure of
complex Cu(In,Ga)Se2 quaternary based alloys in large area
substrates
Correlation with detailed advanced characterization of devices
and processes
b) To improve production yields and throughput by implementation of
suitable quality control and process monitoring techniques:
Development of light scattering based techniques (Raman,
Rayleigh) for process monitoring. Analysis of their
implementability at pilot line level
• Definition/implementation
of advanced
characterization procedures
• Analysis/modification of
main ED & RTP process
parameters
Scientific Highlights
Development of CdS
process monitoring
procedures
Development of AZO
process monitoring
procedures
NEXCIS Baseline process
Improvement of absorber intrinsic properties and homogeneity of ED and
RTP processes: significant increase in efficiency at cell and module level:
Best efficiency 17.3% (demonstrated on 60x120 cm2 substrates) : world
record cell on ED CIGS
Module average efficiency: similar to average PVD industrial production
Efficiency (AA)
July 2012
CIGSe
Jan 2012
CIGSe
July 2013
CIGSe
Jan 2014
CIGSSe
July 2014
CIGSSe
Jan 2015
CIGSSe
Average modules
60x120cm² - - - - 12.4 13.3
Best module
60x120cm² cert. - - - 12.0 13.2 14.0
Average modules
30x60cm²10.5 11.2 11.7 13.5 13.8 14.1
Best module 30x60cm²
cert12.3 12.3 13.1 14.2 14.5 14.8
Average of 99 0.5cm²
cells on 30x60cm²
sample (w/out ARC)
12.6 12.9 13.6 14.9 15.1 15.3
Best certified cell
aperture area with
ARC
14.9
(0.5cm²)
14.9
(0.5cm²)
15.4
(0.5cm²)15.8 (1cm²) 16.0 (1cm²)
17.3
(0.5cm²)
11
5*5 cm2
15*15 cm2
30*60 cm2: Efficiency certified @ 14.8%
60*120 cm2
Efficiency certified @
14.0%
• Since Nov. 2013: setup of a complete 60x120
cm2 fabrication line.
• Jan 2014: first 60x120 cm2 modules fabricated
with record efficiency 12% (AA)
• Jan 2015: Average module efficiency 13.3% (AA)
12
12
1µm
325nm 532nm 785nm
ZnO:A (3.6eV)
i-ZnO (3.6eV)
Cu(In,Ga)Se2
(1.0-1.6eV)
MoSe2
Mo
Glass
CdS (2.5eV)
100 200 300 400 500 600
Inte
nsity (
arb
.units)
Raman shift (cm-1)
CIGS
OVC785nm
325nm
532nm
CIGS CdS
ZnO
OVC
510
Raman
Window
Buffer/
absorber surfaces
Absorber surfaces
Multi-excitation wavelength Raman/PL selective assessment of
absorber /buffer/ TCO layers in CIGS solar cells and modules
Quality assessment and Process monitoring
0.8 1.0 1.2 1.4 1.6 1.8 2.0
[Ga]/
([Ga]+[In])
[Ga]/
([Ga]+[In])
Inte
nsity (
arb
.un
its)
Energy (eV)
47.1%
42.9%
32.9%
14.3%
1.4%
InGaAs detector CCD detector
7.1%
150 200 250 300
220-250 cm-1
Inte
nsity (
arb
. un
its)
CIGSe
785nm
Raman shift (cm-1)
164-180 cm-1
150 200 250 300 350 400
270-350 cm-1
140-230 cm-1
CIGSSe
633
Inte
nsity (
arb
. u
nits)
Raman shift (cm-1)
300 400 500 600 700
ZnO:Al
325nm 541-626 cm-1
Inte
nsity (
arb
. u
nits)
Raman shift (cm-1)
316-516 cm-1
150 200 250 300 350 400
244-342 cm-1CIGSSe
= 532 nm
Inte
nsity (
arb
. u
nits)
Raman shift (cm-1)
164-230 cm-1
ZnO:Al
CdSCIGSSe
In-situ / on-line assessment of quality control
indicators (relevant for module efficiency)
AZO conductivity
CdS thickness
OVC content
Ga/(In+Ga) content - PL
S/(S+Se) content
Application for process monitoring: Implementation and
calibration of a modular/portable Raman/PL setup system
Laser 1064nm
Laser
830nm
Laser
785nm
Laser 532nm
IR
Detector
CCD
Detector
Single grating iHR320
Jobin-Yvon spectrometer
Optical
probe• High flexibility of excitation
wavelength (325nm/ 532nm/ 785nm/
830nm/ 1064nm),
• Implementation of optical probes
compatible with Raman/PL
measurements in wide (IR-Vis-UV)
excitation spectral range
• Easy integration at on-line level
(fiber optics)
• Portable:
Use of resonant Raman
excitation: fast measuring time
(0.1 sec – 10 sec)
Conclusions
INDUCIS: good example of fruitful industry/academia collaboration, with
significant TOK for the establishment & demonstration of an industrial ED
CIGS pilot line:
Commercial size 60x120 cm2 modules demonstrated with efficiencies in
13%-14% range (similar to average module efficiency in existing PVD based
industrial production lines)
Strong advanced in uniformity and reproducibility of up-scaled processes,
together with much deeper knowledge of the different layers in the
cell/module heterostructure at the different process steps
Raman/PL based methodologies for assessment of quality control
indicators relevant for device efficiency already validated on NEXCIS
processes
Supported by:
IREC Fundation: