solar-powered rf signal generation for energy harvester...
TRANSCRIPT
Solar-Powered RF Signal Generation for Energy Harvester Applications
Michelle Saltouros and Samuel Casey
Department of Electrical and Computer Engineering
Bradley University
Advisors: Dr. Brian Huggins and Dr. Prasad Shastry
Senior Project Report
May 2018
I
Abstract
In this project, a solar-powered radio frequency (RF) signal transmitter for wireless energy harvesting
has been designed, implemented and tested. The project uses a photovoltaic panel to convert solar
power into electric power which is stored as chemical energy over time in a battery. The battery is used
to power a voltage-controlled RF oscillator and RF power amplifier that generates and transmits a 915
MHz signal through an antenna to be received and converted to DC energy by an energy harvester. The
project is designed for 24/7 operation, even with low insolation, so efficiency of the electronic and RF
subsystems is an important design consideration. This wireless powering system has potential
applications for powering remote sensors and controllers, as well as powering equipment in hazardous
or controlled environments.
II
Acknowledgments
We would like to give special thanks to Dr. Prasad Shastry and Dr. Brian Huggins for advising us on this
project. We would also like to thank Mr. Chris Mattus, Mr. Nick Schmidt, and Professor Steven Gutschlag
for helping us.
III
Table of Contents
Abstract
Acknowledgements
Chapter 1
Introduction
Chapter 2
Literature Review
2.1 Introduction
2.2 Solar Panel Operations
2.3 Charge Controllers
2.4 Wireless Power Applications
2.5 Concluding Remarks
Chapter 3
Design and Analysis
3.1 Introduction
3.2 PV Array Subsystem
3.3 RF Subsystem
3.4 DC/DC Converters and Voltage Divider
3.5 Full System
3.6 Concluding Remarks
Chapter 4
Tests and Measurements
4.1 Introduction
4.2 Solar Panel
4.3 PV Array Subsystem
4.4 Voltage-Controlled Oscillator
4.5 Power Amplifier
4.6 Energy Harvester
4.7 RF Subsystem
4.8 Complete System
4.9 Concluding Remarks
Chapter 5
Experimental Results
5.1 Introduction
5.2 PV Array Subsystem
5.3 RF Subsystems
5.4 Complete System
5.5 Concluding Remarks
IV
Chapter 6
Conclusions and Recommendations
References
Appendices
1
Chapter 1
Introduction
The goal of this project was to design a 915 MHz RF transmitter powered by solar energy, instead of
utility power. The system has the capacity to store backup power for times with low levels of insolation.
It was built for 24/7 operation.
The RF transmitter frequency of 915 MHz was chosen since it iss used in the ongoing Panduit wireless
power transfer project. In addition, the transmitter may be used as a source of RF power for charge
pumps designed for 915 MHz operation in a concurrent senior project. This wireless powering system
has potential applications for powering remote sensors and controllers. The output power of the
transmitter is limited to 1 Watt per Federal Communications Commission (FCC) regulation. The system
runs continuously.
There are many potential applications for a project like this. A couple of important ones would be the
ability to power equipment in hazardous or flammable environments that could not risk a potential
spark. Another would be to power moving equipment that could not have wires connected to it. It could
power remote sensors and testing equipment. It also has applications in far-field wireless charging of
devices.
The project objectives were to transmit at 915MHz and under 1W of power and to be solar-powered.
The system was also designed for 24/7 operation.
2
Chapter 2
Literature Review
2.1 Introduction
A brief engineering study was done on solar panels, charge controllers, and wireless power. This chapter
presents a review of the published works on these topics.
2.2 Solar Panels
Solar panels are a green energy alternative to fossil fuels, using the energy of the sun to power anything
from houses to whole grids instead of coal or oil. Throughout the years, a lot of research has gone into
improving their designs, making them not only more efficient but also cheaper.
Solar panels are able to generate electricity through a variety of different technologies working
together. The following section will describe the basics of how solar panels work and the circuitry behind
them.
Functionality of Solar Panels
Solar panels are able to generate electricity by letting particles of light move electrons from atoms. They are photovoltaic (PV), which means they can convert sunlight into useable energy or electricity. In order to work, the cells in the panels need an electric filed which is created by giving the top of the panel negative charges and the bottom positive charges [1]. This is done by combining different types of materials together, which will be discussed later.
From here, metal plates take the electrons and send them through wires, where they flow like electricity usually does. The panel has then converted energy into DC current. The US uses AC power in its grids, so many panels have inverters that convert the DC current to AC current [2].
Once this conversion had taken place, the energy can be used to power something like the grids used to run electricity in houses and buildings.
Circuitry
A single diode circuit is an equivalent circuit to a single solar cell. Solar panels are made up of multiple solar cells. The circuit in Figure 1 is the most commonly used equivalent circuit model. It uses a diode and two resistors [3].
3
Figure 1. Single Diode Equivalent Circuit Model
Kirchoff’s Law can be used to find the current, while the Shockley equation can be used for the ideal diode. The circuit is a fairly simple one, allowing solar panels to be built easily [3].
Materials
Solar panels are typically made of silicon. The silicon is “doped” in order to create the electric current needed to generate power. This is done by combing phosphorus in the top layer for a negative charge, and boron in the bottom layer for a positive charge [1].
There are two different types of structures silicon comes in that are commonly used for solar panels. The first is mono-crystalline and the second is polycrystalline. Mono-crystalline solar panels are made from one large silicon block that is cut into wafers, while polycrystalline solar panels are made of silicon cells that are made by melting silicon crystals together. Mono-crystalline panels are more efficient, but polycrystalline panels are less expensive [1].
Power Generation
In just five years, the price of solar panels has dropped by over 50%. This trend is expected to continue overtime, with 20% of energy consumption in 2027 being solar powered. With companies like Tesla now joining the market, solar panels are become more marketable and increasing in demand. Bio-materials to replace silicon currently used is being researched. This could eventually make wireless power applications easier to create [4].
Currently, research in Germany and Israel is finding newer ways to make panels more efficient and able to store more energy for late. From using solar panels in orbit, to designing trees that will store solar energy in their leaves, research is being done all over the world to improve upon solar power generation and storage [4].
2.3 Charge Controllers
A charge controller is a type of voltage regulator that maximizes efficiency of charging and prevents overcharging of a battery. Originally charge controllers were shunt transistor circuits that just cut off voltage from the solar panel to the battery that was higher than the rated battery voltage. These controllers were highly inefficient and have become obsolete. The new type of charge controllers are PWM controllers. PWM controllers have become the industry standard and have efficiencies of around 60% to 80%. A newer type of controller, called maximum power point tracking (MPPT), is starting to take
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over as a new industry standard. They have efficiencies from 94% to 98 % typically and can provide 10% to 30% more power to a battery [5]. MPPT Charge Controllers
MPPT charge controllers are a type of DC/DC converter that optimizes the power from the solar array to the battery. They work by measuring the output voltage of the panel and matching it to the best voltage for getting a high current into the battery. The point at which the panel voltage is converted to for optimal charging is referred to as the maximum power point. This power point is affected by the charge of the battery and the temperature of the panels. When the battery is at a lower charge, there is greater power loss for charge controllers that are not MPPT due to the greater mismatch of panel voltage to battery voltage. On cold days solar panels output higher than rated power because of the nature of PV cells. The higher output power is lost when converting down to battery voltage unless a MPPT charge controller is used because it can track that increase in the maximum power point [6]. Functionality of MPPT Controllers
MPPT controllers take the DC input from the panel, convert it to an AC signal that is typically in the 20-80 kHz range, and then converts it back to the most efficient DC output to the battery. The controller is controlled by a microprocessor that checks the panel voltage, panel power, and the battery voltage. The microprocessor then uses those values to determine the most efficient voltage and current to convert the input into for the output [6].
2.4 Wireless Power
Wireless power transfer (WPT) is split into two categories: inductive and far-field. Inductive charging is the technology embedded in modern smartphones and other devices that work when the phone is placed on a charging pad. This method works based on the principle of electromagnetic inductive coupling and can only transfer power for maximum of about 4cm. Far-field WPT uses radio frequency (RF) waves to transfer the power over longer distances. A RF signal is sent out from an antenna that is received and converted to usable DC power [7]. Applications
Far-field WPT has useful applications in daily life, equipment testing, space exploration, and other applications. Everyday people carry around mobile devices that are critical for work that rely on battery power. If a device runs out of battery power, critical time will be wasted in recharging the device. If a battery dies then important work can also be lost. So, if far-field WPT was imbedded into devices and WiFi networks then the issue of “battery life” is greatly reduced for mobile devices [7]. When sensors are used on rotating machinery, they must be powered from cables that have expensive rotating couplers or from batteries that have a limited amount of charge. Sending power to these sensors wirelessly eliminates both of those problems. WPT also has potential applications in space travel and research. Weight savings on spacecraft leads to massive cost savings due to the nature of launching into orbit. Replacing portions of cabling on a spacecraft with WPT systems could lead to weight reductions and massive cost savings.
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2.5 Concluding Remarks
In this project, a solar panel and charge controller will be used to power an RF signal generator that will
transmit a signal to an energy harvester.
6
Chapter 3
Design and Analysis
3.1 Introduction
In this chapter, the designs of the two subsystems in this project and the complete system will be
discussed. The two subsystems are the RF Subsystem and the PV Array Subsystem which together make
up the complete system.
The system was designed to use a 915 MHz signal as suggested by a previous senior project and to run
for 24/7 operation. It transmits under 1 Watt to follow FCC regulations. It is solar powered using one
solar panel and generates and transmits RF power using a transmitting antenna.
3.2 Complete System
The block diagram of the system is shown in Fig. 2. Incident solar radiation is converted to DC power by the Photovoltaic (PV) array. The important parameters for the PV array are voltage, current, and power outputs as a function of insolation. The array connects to the charge controller which interfaces to the battery. The important parameters for the charge controller are input and output voltage, current, efficiency, power, and how well it can regulate these parameters.
Figure 2. The Complete System Block Diagram
The battery specifications are capacity, voltage, current, and power. The values of the parameters for these 3 subsystems (see Figs. 3 and 4) were determined in consideration of the RF subsystem requirements. These include supply voltage and current for both the oscillator and power amplifier (PA) as well as the duty cycle of the RF transmission.
The PV subsystem and RF subsystem are connected by wires from the battery to the 915 MHz oscillator and through a DC-DC converter to the power amplifier. The DC-DC converter is used to change the voltage level of the battery (12V) to the voltage level required by power amplifier (5V). A voltage divider is used for the tuning of the 915 MHz oscillator. This is in order to obtain the voltage needed for the 915
7
MHz signal to be sent out (7.9V). The following tables present the parts used in the complete system and their corresponding subsystems.
Table 1
Specifications of RF Subsystem Parts
Part Name Part Number Vcc Current Power Output
Gain Frequency Impedance
Voltage Controlled Oscillator
ZOS-1025+ 12V 140mA 8dBm 685MHz-1025MHz
50Ω
Power Amplifier
ZX60-V63+ 5.0V 69mA 18.5dBm 21dB 0.05-6GHz 50Ω
Table 2
Specifications of PV Subsystem Parts
Part Part Name Type Rated Power Nominal Battery Voltage
Max Voltage Short-Circuit Current
PV Panel BP 350
50W 12V 21.8V 3.2A
Charge Controller
Genasun GV-4
MPPT 50W 12V 27V 4A
Battery Sun Xtender PVX-340T
AGM 12V 12V
The 915 MHz oscillator and power amplifier were purchased from Mini-Circuits Company. These parts
were chosen because of their frequency ranges that included the 915MHz the system was to run at, and
also because they were connectorized components. Being connectorized made them easier to work with
and test in this project.
The solar panel is the BP 350 that the ECE department already owns. Along with this, the charge
controller that was chosen is the Genasun GV-4. Once all of these parts were chosen, a battery with
enough capacity was picked out, and a 12/5V DC/DC converter the ECE department owned was used.
The battery was chosen using the textbook Applied Photovoltaics Second Edition that suggested using a
battery with 15 days of backup storage [8]. The following are the calculations used:
Voltage draw of RF Subsystem: 17V
Current draw of RF Subsystem: 209mA
Ideal Battery:
209𝑚𝐴 ∗ 24ℎ ∗ 15𝑑𝑎𝑦𝑠 = 75,240𝑚𝐴ℎ
8
Chosen Test Battery:
34Ah / 209mA / 24h = 6.78 days of storage
The battery was chosen to have about half of the necessary storage for testing purposes. In order to
prove the system works, it was not necessary to purchase a battery with 13 days of storage.
Five parts were ordered for this specific project. Below are the specs of the chosen parts:
ZOS-1025+: 915 MHz Oscillator (Mini Circuits)
− 12V max operating voltage, 8dBm power output, 50 output impedance, 140mA
operating current
ZX60-V63+: Power Amplifier (Mini Circuits)
− 0.05 to 6 GHz (wideband), 21 dB gain, 5.0V, 69mA DC Current, 18.5dBm power output
BP 350: Photovoltaic Panel (BP Solar)
− Max power (50 W), Short Circuit Current (3.2 A)
Genasun GV-4: MPPT Charge Controller (Genasun)
− Max Panel Power (50 W), Rated battery (output) current (4 A), Electrical Efficiency (96%
- 99.85% typical)
Sun Xtender PVX-340T: AGM Battery (Wholesale Solar)
− 12V rated voltage, 34Ah capacity (408Wh), Absorbent glass matt (AGM) deep cycle,
non-spillable lead acid
3.3 PV Array Subsystem
The first subsystem is the PV Array Subsystem. It contains the solar panel, charge controller, and battery
as shown in Fig. 3.
Figure 3. PV Array Subsystem
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3.4 RF Subsystem
The other part of the system is the RF Subsystem which can be seen in Figure 4. This subsystem consists
of a DC power supply, the 915 MHz oscillator, the power amplifier, the transmitting antenna, and a test
circuit consisting of a receiving antenna, energy harvester, and load. It will be tested to verify that the
system can properly transmit and receive power wirelessly.
Figure 4. RF Subsystem Including the Energy Harvester
3.5 DC/DC Converter and Voltage Divider
The DC/DC converter that was used took the 12V from the charge controller and sent out 5V to the
power amplifier. The power amplifier required 5V to work. The DC/DC converter chosen was the
LM7805 (Fig. 5) that was already available in the ECE department. The converter needed two capacitors
in order to have a stable output. The following diagram is the circuit set-up for the LM7805 as given in
its datasheet that is included in the appendix.
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Figure 5. LM7805 Circuit
The voltage divider was used to supply the correct tuning voltage to the voltage-controlled oscillator.
The tuning voltage was 7.79V for 915MHz. In order to get this voltage, a 300k and a 560k resistors
were used. The following diagram is an example of the voltage divider used [9].
Figure 6. Voltage Divider Circuit
A voltage divider was used instead of a DC/DC converter because a specialized DC/DC converter is have
needed in order to get the 7.79V. The tuning voltage port of the voltage-controlled oscillator draws no
current and the voltage divider circuit draws 167.4W of power, compared to the rest of the system,
this power draw is very tiny, and so the efficiency is not appreciably affected.
3.6 Concluding Remarks
The system and subsystems were then tested. Observations were recorded, measurements were taken,
and analysis was done on all tests. The following chapters discuss these tests and experimental results.
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Chapter 4
Tests and Measurements
4.1 Introduction
Tests were conducted and measurements were taken on the components and the two subsystems. The
Power and Microwave laboratories were used for these tests. The network analyzer, spectrum analyzer,
oscilloscope, multimeter, and signal generators were used for the testing.
4.2 Solar Panel
Measurements were taken of the solar panel during different types of weather to observe how efficient
the panel was during the year. All types of weather were seen, sunny, raining, snowing, etc. The solar
panel was taken outside of Jobst Hall on a cart and faced towards south for all measurements. Slight
shadows on the panel drastically reduce the power output so measurements through a window were
not possible. A multimeter was used to record the values of short circuit current and open circuit
voltage as well as voltage and current in a 200 rheostat.
4.3 PV Array Subsystem
To test the PV Subsystem, the panel, charge controller, and battery were taken outside the building. The
same measurements taken previously on the solar panel were first taken, using the same 200 rheostat. Then the components of the subsystem were connected. The voltage into and out of the charge controller were measured. Then the currents into and out of the charge controller were also measured. Measurements were then taken from the solar panel, and between the parts of the system. The system was taken outside of Jobst Hall on a cart and the panel faced South for all measurements.
4.4 Voltage-Controlled Oscillator
The voltage-controlled oscillator (VCO) was tested using a spectrum analyzer. The AUX OUT port was
terminated with 50. Two adapters were used on the tuning voltage port (CON), an SMA (m) – BNC (f)
and BNC (m) – power and ground banana input ports. 12V was hooked up to the DC port. The OUT port,
the output, was connected to the spectrum analyzer. A DC blocking capacitor was used in the OUT port.
The frequency range on the spectrum analyzer was set to 600-1030MHz to include the entire frequency
range (685-1025MHz) of the VCO. Two power supplies were used. The tuning voltage was originally set
to 0V. The supply current was recorded to be 0.12A.
The tuning voltage was increased from 0V to 16V in increments of 1V with the exceptions of the voltages
that gave the 685, 915, and 1025MHz frequencies. The signal peak power and frequency were recorded.
The 915MHz signal was then captured again with a narrower range in order to see any sidebands. The
first and second harmonics levels were recorded.
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4.5 Power Amplifier
The network analyzer was used for the testing of the power amplifier. The frequency range was set to
0.05GHz- 6GHz. The power was set to -20dB, since the max gain is 22dB and the network analyzer
cannot handle more than 20dBm. No DC blocking capacitors were used since the component already has
one built in.
5V was gradually applied to the power amplifier once it was hooked up to the network analyzer. As 5V
increased, the S21 trace moved up. At 5V, the current drawn by the amplifier was 0.07A.
Using ADS, the magnitude (dB) plots of the S-parameters and the phase (degrees) plots of the S-
parameters were taken. Markers were put at 915MHz, the operating frequency, and 685MHz and
1025MHz, the minimum and maximum frequency. All plots can be seen in Chapter 5.
4.6 Energy Harvester
The Powercast energy harvester was used to test the RF subsystem and later test the complete system.
In Figure 7 below, the energy harvester is shown with onboard switches S1, S2, S3 and S4 are labeled.
Figure 7. Powercast Energy Harvester
Switch S1 controls the voltage from the rectifier within the Powercast. It can be set to 4.2V, 3.3V, or ADJ
which allows the voltage to be controlled by R5 and R6. Switch S2 controls where the power goes. The
power can be sent to LED, MEAS, or VCC. LED powers a LED on the board. MEAS sends power to S3. VCC
sends power to S4. For this project S2 was set to VCC and S3 was never used. S4 has the settings OFF,
BATT, and C6. OFF opens the circuit and turns the Powercast off. BATT sends the power to the BATT
terminals for the purpose of charging a battery. C6 is stated to be a 50mF supercapacitor on the
evaluation board instruction manual. This capacitor smooths the output of the rectifier to be a DC
voltage so measurements will be taken from the capacitor.
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The switches will be set as: S1 to 4.2V, S2 to VCC, S3 is irrelevant, and S4 to C6. Measurements will be
taken from the C6 terminal to ground.
4.7 RF Subsystem
The RF subsystem was hooked up all together and powered by three different signal generators. The
output of the power amplifier was connected to the transmitting antenna of the energy harvester. The
receiving antenna was connected to the energy harvester and placed on a moving cart. An oscilloscope
was connected to the on-board capacitor in order to record the voltage.
The two antennas were tested using the spectrum analyzer to record the transmitting and receiving
frequency and power. Then the entire system was tested using the oscilloscope. The system was
confirmed to work once the capacitor charged up.
The cart was then moved from 0.5-18ft. The capacitor voltage was recorded every foot. It was seen that
the capacitor charged up even at 18ft., the distance of the RF lab.
4.8 Complete System
The complete system was set up in the Power laboratory. The PV array subsystem was placed by the
window facing south and the RF subsystem was connected and taped down to a board so it was easy to
move and would stay in place. The two systems were connected by a 1A fuse. The charge controller was
connected to the fuse and the fuse was connected to the 12V line on the breadboard holding the DC/DC
converter and the voltage divider.
The energy harvester with the connected receiving antenna was placed onto the same cart and the
oscilloscope was connected to the on-board capacitor. The complete system was then powered up. The
system worked as planned, and transmitted the 915MHz signal to the receiving antenna that then used
the power to charge up a capacitor.
4.9 Concluding Remarks
Each part and subsystem was tested using the equipment in the Power and Microwave laboratories. All
tests were recorded and the results can be seen in the next Chapter. The system worked as expected.
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Chapter 5
Experimental Results
5.1 Introduction
The two subsystems were tested separately and then finally together. This chapter presents and
discusses the experimental results.
5.2 PV Array Subsystem
The solar panel was originally tested on its own to ensure functionality and its performance in different
types of weather. The measurements were taken outside on different days. The following is a table of
the measurements.
Table 3
Solar Panel Measurements
The current from the panel changes significantly depending on the weather. The current ranges from 50
mA up to 4.1A. The voltage typically stays above the rated 17.5V except for when there was almost no
sunlight. If the solar panel was stored outside then the temperature of the panel would also become a
factor that should be measured.
The PV array subsystem was connected. A 200 rheostat was used for measurements that required a
load. The following is a picture of the PV array subsystem (Fig. 8).
15
Figure 8. PV Array Subsystem
Measurements were taken using a multimeter outside on April 26th, 2018 at 3:10pm. The weather was
partially cloudy. Below is a table of the measurements taken and recorded.
Table 4
PV Array Measurements
Measurement Measured Value
Solar Panel Open Circuit Voltage 20.30V
Solar Panel Short Circuit Current 1.62A
Solar Panel with Rheostat Load Voltage 20V
Solar Panel with Rheostat Load Current 0.116A
Solar Panel to Charge Controller Voltage 16V
Solar Panel to Charge Controller Current 1.16A
Charge Controller to Battery Voltage 12.97V
Charge Controller to Battery Current 1.31A
From these measurements, it was confirmed that the PV array subsystem was working as expected. The
output voltage of the panel was converted from 16V to 12.97V to go into the battery. The voltage going
into the battery must be slightly higher than the battery’s current voltage so that it will charge. The
current is increased from 1.16A coming out of the panel to 1.31A going into the battery. These results
are what we expected to find and confirm proper functionality of the PV subsystem.
5.3 RF Subsystem
The parts of the RF Subsystem were measured separately and then together with the energy harvester.
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Voltage-Controlled Oscillator
The voltage-controlled oscillator was measured using the spectrum analyzer in the RF Lab. The following
are the resulting plots that were captured using Benchlink. The data on the tuning voltage for each
frequency can be seen in the following table.
Table 5
Frequency vs. Tuning Voltage
Tuning Voltage (V)
Signal Peak Power (dBm)
Frequency (MHz)
0 4.61 514.6
1 9.04 588.8
2 10.47 644.1
2.88 10.64 685.5
3 10.72 691.4
4 10.3 734.4
5 9.92 790.3
6 10.09 842.9
7 9.96 884.9
7.79 9.83 915
8 9.82 921.4
9 9.86 952.6
10 9.61 979.5
11 9.51 1002.5
12 9.41 1022.5
12.17 9.43 1025.7
13 9.33 1039.5
14 9.29 1056
15 9.11 1071
16 9.01 1086
The data in the foregoing table was plotted (Fig. 9). The black dots in the plot represent 685MHz,
915MHz, and 1025MHz.
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Figure 9. Frequency (MHz) vs. Tuning Voltage (V)
Plots from the spectrum analyzer were also taken at 685MHz, 915MHz, and 1025MHz. They can be seen
in Figs. 10, 11, and 12.
Figure 10. 685.5MHz signal @ 2.88V
Figure 11. 1025.7MHz signal @ 12.17V
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Figure 12. 915MHz signal @ 7.79V
The first and second harmonics of the 915MHz signal were also captured using the spectrum analyzer.
They can be seen in fig. 13.
Figure 13. Harmonics of the 915MHz signal
Given all of this information, the tuning voltages for the frequency range of the VCO were found and the
tuning voltage, 7.79V, which would give exactly 915MHz was found. These numbers varied slightly from
the datasheet. 7.79V was used for both RF subsystem and complete system testing.
Power Amplifier
The power amplifier was measured using the Network Analyzer in the RF Laboratory. Following are the
resulting plots that were captured in ADS. The first four plots are the magnitude plots of the S-
parameters (Figs. 14, 15, 16, and 17).
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Figure 14. Magnitude of S11
Figure 15. Magnitude of S12
20
Figure 16. Magnitude of S21
Figure 17. Magnitude of S22
21
The next four plots show the phases of the four S-parameters (Figs. 18, 19, 20, and 21).
Figure 18. Phase of S11
Figure 19. Phase of S12
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Figure 20. Phase of S21
Figure 21. Phase of S22
From this testing, it was learned that the exact gain of the power amplifier at 915MHz was 21.127dB.
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Energy Harvesting
The entire RF subsystem was connected and powered up, along with the transmitting and receiving
antennas. The receiving antenna was connected to an energy harvester that had an on-board capacitor
across which measurements were taken. Shown in Figs. 22 and 23 are the photos of the RF subsystem
hooked up to the spectrum analyzer and the energy harvester on a moving cart.
Figure 22. RF Subsystem
Figure 23. Energy Harvester
The transmitting antenna’s power was measured on the spectrum analyzer and then the receiving
antenna’s power was measured. Figs. 24 and 25 show the plots showing that the transmitted power is
received by the other antenna at 915MHz.
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Figure 24. Transmitting Antenna Signal
Figure 25. Receiving Antenna Signal
The entire RF subsystem was then tested from 0.5-18 feet to see if the signal was still strong enough to
reach the receiving antenna. Shown in Table 6 is the data collected at these distances.
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Table 6
Distance (ft.) vs. Capacitor Voltage (V)
Distance (ft.) Capacitor Voltage (V)
0.5 4.2
1 4.2
2 4.2
3 4.16
4 4.12
5 4.04
6 4.04
7 4
8 3.96
9 3.96
10 3.92
11 3.92
12 3.92
13 3.88
14 3.84
15 3.84
16 3.84
17 3.84
18 3.8
Figure 26. Capacitor Voltage (V) vs. Distance (ft.)
As it can be seen in Figure 26, the voltage measured across the capacitor does not change by a
significant amount. It is believed that if given a bit more time, the capacitor would charge back up to
4.2V even at the distance of 18ft. This is due to the signal taking a longer time to power the capacitor
26
than before because of the longer distance and hence lower received power. However, it was proven
that even at 18ft., the capacitor was still charged up by the RF subsystem.
5.4 Complete System
The entire system was connected in the Power lab and tested. Figs. 27, 28, 29, 30, 30, 32, and 33 are
photos of the system.
Figure 27. PV Array Subsystem
Figure 28. PV Array Subsystem Connected to 1A Fuse
27
Figure 29. RF Subsystem
Figure 30. Voltage Divider and DC/DC Converter Circuit
28
Figure 31. Complete System
Figure 32. Energy Harvester
29
Figure 33. Complete System
The complete system worked as expected and transmitted at 915MHz. 4.2V was developed across the
capacitor. Shown in Fig. 34 is a picture of the received signal measured on the oscilloscope.
Figure 34. Capacitor Voltage (4.24V) Developed by the System
Unfortunately, on another test run, the voltage-controlled oscillator stopped working and no further
measurements could be taken. The VCO was tested on the spectrum analyzer with a 7.79V tuning
voltage and it was found that the VCO was still giving out the 915MHz signal, but at -65dBm level instead
of the previous 10dBm. It is believed that the internal amplifier stopped functioning properly, and the
signal was below the noise threshold of the power amplifier, thus the full system no longer worked
properly. It appears that the part may have been faulty. No further tests could be done. However, it was
confirmed that the complete system worked as expected.
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5.5 Concluding Remarks
Each part of the subsystems was tested and observed for its correct functionality needed to make the
complete system work. All plots and data were recorded. The system ran as expected during all tests.
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Chapter 6
Conclusion and Recommendations
Overall, the complete system worked as expected and transmitted power to the receiving antenna that
charged up the on-board capacitor of the energy harvester. The complete system was tested a couple of
times and it worked each time. Unfortunately, on one of the test runs, the voltage-controlled oscillator
stopped working correctly. It is believed the internal amplifier might have been faulty. However, the
system was already proven to work and the data necessary to complete the project was taken.
The system ran at 915MHz and was solar-powered. It also transmitted power wirelessly from one
antenna to another. The system transmits about 0.156W.
For future work on the project, there are a few recommendations.
1. A DC/DC converter for the 7.79 tuning voltage replaces the voltage divider.
2. A battery with 15 days of backup storage and a solar panel with a higher rating would also
improve the project.
3. A microcontroller-based variable duty cycle could be used, or a new charge controller could be
designed for the system.
4. A higher power amplifier with a larger gain or a power amplifier designed and built for the
system could also be used.
5. The RF subsystem could be integrated on a single PCB, using oscillator and amplifier packaged
chips.
The project worked as intended and showed potential use for real-world applications like powering
devices in hazardous or moving environments. The system met all previously set requirements, and
hence the project is considered a success.
32
References
[1] M. Dhar, “The History Of Solar Power,” Experience, 03-Aug-2017. [Online]. Available:
https://www.experience.com/advice/careers/ideas/the-history-of-solar-power/. [Accessed: 05-
Apr-2018].
[2] M. DeBono, “How Does Solar Energy Work | SunPower Solar Blog,” SunPower - United States, 20-
Oct-2017. [Online]. Available: https://us.sunpower.com/blog/2017/10/25/how-does-solar-
energy-work/. [Accessed: 05-Apr-2018].
[3] “Single Diode Equivalent Circuit Models,” PV Performance Modeling Collaborative, 2018. [Online].
Available: https://pvpmc.sandia.gov/modeling-steps/2-dc-module-iv/diode-equivalent-circuit-
models/. [Accessed: 05-Apr-2018].
[4] Rinkesh, “The Future of Solar Energy,” Conserve Energy Future, 25-Dec-2016. [Online]. Available:
https://www.conserve-energy-future.com/future-solar-energy.php. [Accessed: 05-Apr-2018].
[5] “Solar Charge Controller Basics,” Northern Arizona Wind & Sun, 2018. [Online]. Available: https://www.solar-electric.com/learning-center/batteries-and-charging/solar-charge-controller-basics.html. [Accessed: 02-May-2018].
[6] “All About Maximum Power Point Tracking (MPPT) Solar Charge Controllers,” Northern Arizona Wind
& Sun, 2018. [Online]. Available: https://www.solar-electric.com/learning-center/batteries-and-charging/mppt-solar-charge-controllers.htmll. [Accessed: 02-May-2018].
[7] M. Xia, “On the Efficiency of Far-Field Wireless Power Transfer,” arXiv, 12-Apr-2015. [Online].
Available: https://arxiv.org/pdf/1504.02944.pdf. [Accessed: 04-May-2018].
[8] S. R. Wenham, M. A. Green, M. E. Watt, and R. Corkish, Applied photovoltaics. London: Earthscan,
2009.
[9] “Voltage Divider Calculator,” Ohm's Law Calculator. [Online]. Available:
http://www.ohmslawcalculator.com/voltage-divider-calculator. [Accessed: 03-May-2018].
33
Appendices
The following list of parts had datasheets that were used throughout the designing, assembling, and
testing of the project:
ZOS-1025+: Voltage-Controlled Oscillator
ZX60-V63+: Power Amplifier
BP 350: Photovoltaic Panel
Genasun GV-4: MPPT Charge Controller
Battery: Sun Xtender PVX-340T AGM Battery
LM7805: 12/5V DC/DC Converter
Powercast P1110 Evaluation Board: Energy Harvester
FREQUENCY(MHz)
POWEROUTPUT
(dBm)Typ.
TUNINGVOLTAGE
(V)
PHASE NOISE(dBc/Hz)
SSB at offset frequencies: Typ.
PULLING(MHz)pk-pk
(open/short)
PUSHING(MHz/V)
TUNINGSENSITIVITY
(MHz/V)
HARMONICS(dBc)
3 dBMODULATIONBANDWIDTH
(MHz)
DCOPERATING
POWER
Vcc(volts)
Current(mA)Max.Min. Max. Main Aux. Min. Max. 10 kHz 100 kHz 1 MHz Typ. Typ. Typ. Typ. Max. Typ.
685 1025 +8 -13 1 16 -92 -112 -136 0.051 1.00 30 -25 -18 0.1 12 140
ISO 9001 ISO 14001 AS 9100 CERTIFIEDMini-Circuits®
P.O. Box 350166, Brooklyn, New York 11235-0003 (718) 934-4500 Fax (718) 332-4661 For detailed performance specs & shopping online see Mini-Circuits web site
The Design Engineers Search Engine Provides ACTUAL Data Instantly From MINI-CIRCUITS At: www.minicircuits.com
minicircuits.com
TM
IF/RF MICROWAVE COMPONENTS
CASE STYLE: BR386
Coaxial
Maximum RatingsOperating Temperature -55°C to 85°C
Storage Temperature -55°C to 100°C
Absolute Max. Supply Voltage (Vcc) +16V
Absolute Max. Tuning Voltage (Vtune) +18V
Electrical Specifications
REV. AM110171ZOS-1025SK/TD/CP/AM081106
Outline Drawing
Dual Output 685 to 1025 MHz
Features• wide bandwidth• linear tuning• excellent harmonic suppression, -25 dBc typ.• rugged shielded case• protected by US Patent, 6,943,629
Applications• auxiliary output freq. monitoring• load insensitive source
Voltage Controlled Oscillator
Outline Dimensions ( )inchmm
electrical schematic
ZOS-1025FREQUENCY vs.TUNING VOLTAGE
0
200
400
600
800
1000
1200
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16
V TUNE (V)
FR
EQ
UE
NC
Y (
MH
z)
Connectors Model Price Qty.SMA Z0S-1025(+) $119.95 (1-9)
ZOS-1025+ZOS-1025
+ RoHS compliant in accordance with EU Directive (2002/95/EC)
The +Suffix identifies RoHS Compliance. See our web site for RoHS Compliance methodologies and qualifications.
A B C D E F G H J K L M N P Q R wt3.25 1.38 1.25 .71 1.13 .125 2.25 .71 .41 .98 1.28 2.950 .15 1.100 .14 .150 grams
82.55 35.05 31.75 18.03 28.70 3.18 57.15 18.03 10.41 24.89 32.51 74.93 3.81 27.94 3.56 3.81 180
all specifications: 50 ohm systemPermanent damage may occur if any of these limits are exceeded.
NotesA. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp
Mini-Circuits®
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Product OverviewThe ZX60-V63+ (RoHS compliant) uses Mini-Circuits' HBT technology to offer high gain over a broad frequency range and high IP3. Housed in a rugged, cost effective unibody chassis, this amplifier supports a wide variety of applications requiring moderate power output, low distortion and 50 ohm matched input/output ports.
Feature Advantages
High Gain21.9 dB typ. at 0.05 GHz15.4 dB typ. at 6 GHz
High gain reduces number of gain stages, at lower real estate, component count and cost.±1.7 dB gain flatness from 50 MHz to 3 GHz
Broadband: 0.05 to 6 GHzBroadband covering primary wireless communications bands:Cellular, PCS, LTE, WiMAX, UHF, VHF, L band, Satcom, radar, etc.
High IP3 vs. DC power consumption34.2 dBm typical at 0.05 GHz33.3 dBm typical at 0.8 GHz
This model matches good IP3 performance relative to power consumption. The HBT structure provides good linearity over a broad frequency range as shown in the IP3 being typically 16 dB avobe the P1dB point to 0.8 GHz. This feautre makes this amplifier ideal for use in:• driver amplifiers for complex waveform upconverter paths• drivers in linearized transmit systems
Very Small Size, 0.75" x 0.75" The unique unibody construction enables the ZX60-V63+ to be used in compact designs.
The Big Deal• High Gain• Broadband High Dynamic Range• Wideband, 0.05 to 6 GHz
Case Style: GC957
Wideband AmplifierHigh Gain, High IP3
ZX60-V63+50Ω 0.05 to 6 GHz
Key Features
NotesA. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp
Mini-Circuits®
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Wideband AmplifierHigh Gain, High IP3
ZX60-V63+
Features• Gain, 21 dB typ. at 0.8 GHz• Flat Gain, ±1.7 dB from 50 to 3000 MHz• High Pout, P1dB, +18.5 dBm typ. at 0.8 GHz• High IP3, 33.3 dBm typ. at 0.8 GHz
Applications• Base station infrastructure• Portable wireless• CATV & DBS• MMDS & Wireless LAN• LTE• SATCOM• Radar
Electrical Specifications at 25°C and 5.0V unless noted
50Ω 0.05 to 6 GHz
Case Style: GC957Connectors ModelSMA ZX60-V63+
REV. AM152326ED-14664/1ZX60-V63+CW/TH/CP150811
Parameter Condition (GHz) Min. Typ. Max. UnitsFrequency Range 0.05 6 GHz
Gain
0.05 21.9
dB
0.8 19.0 21.12.0 20.33.0 19.24.0 18.06.0 15.4
Gain Flatness 0.05 - 3.0 ±1.70.7 - 2.6 ±1.3 dB
Input Return Loss
0.05 14.8
dB
0.8 14.0 23.62.0 16.73.0 10.84.0 10.86.0 13.4
Output Return Loss
0.05 15.7
dB
0.8 12.0 15.52.0 13.63.0 15.94.0 24.16.0 11.8
Output IP3
0.05 34.2
dBm
0.8 33.32.0 31.23.0 28.84.0 27.76.0 23.9
Output Power @ 1 dB compression
0.05 18.4
dBm
0.8 17.0 18.52.0 17.83.0 16.14.0 15.06.0 12.1
Noise Figure
0.05 3.60.8 3.72.0 3.73.0 3.8 dB4.0 3.86.0 4.3
Directivity (Isolation-Gain) 0.05 - 6 4.0 dB
DC Voltage 4.8 5.0 5.2 V
DC Current 58 69 78 mA
+RoHS CompliantThe +Suffix identifies RoHS Compliance. See our web site for RoHS Compliance methodologies and qualifications
NotesA. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp
Mini-Circuits®
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ZX60-V63+
Maximum RatingsParameter Ratings
Operating Temperature -40°C to 85°C Case
Storage Temperature -55°C to 100°C
DC Voltage 5.7 V
Input RF Power (no damage) 13 dBm
Power Consumption 0.5 W
Permanent damage may occur if any of these limits are exceeded.
Outline Dimensions ( )inchmm
Outline Drawing
A B C D E F G H J K L M N P Q R wt.74 .75 .46 1.18 .04 .17 .45 .59 .33 .21 .22 .18 1.00 .37 .18 .106 grams
18.80 19.05 11.68 29.97 1.02 4.32 11.43 14.99 8.38 5.33 5.59 4.57 25.40 9.40 4.57 2.69 23.0
NOTE: When soldering the DC connections, caution must be used to avoid overheating the DC terminal. See Application Note. AN-40-010.!
NotesA. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp
Mini-Circuits®
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ZX60-V63+Typical Performance Data/Curves
ZX60-V63+GAIN
10
15
20
25
30
0 1000 2000 3000 4000 5000 6000FREQUENCY (MHz)
GA
IN (d
B)
ZX60-V63+DIRECTIVITY
0
5
10
15
0 1000 2000 3000 4000 5000 6000FREQUENCY (MHz)
DIR
EC
TIV
ITY
(dB
)
ZX60-V63+OUTPUT POWER AT 1-dB COMPRESSION
10
15
20
25
30
0 1000 2000 3000 4000 5000 6000FREQUENCY (MHz)
OU
TPU
T P
OW
ER
(dB
m)
ZX60-V63+NOISE FIGURE
0
2
4
6
8
0 1000 2000 3000 4000 5000 6000FREQUENCY (MHz)
NO
ISE
FIG
UR
E (d
B)
ZX60-V63+VSWR
1.0
1.5
2.0
2.5
3.0
0 1000 2000 3000 4000 5000 6000FREQUENCY (MHz)
VS
WR
IN OUT
ZX60-V63+IP3
101520253035404550
0 1000 2000 3000 4000 5000 6000FREQUENCY (MHz)
IP3
(dB
m)
FREQUENCY(MHz)
GAIN (dB)
DIRECTIVITY (dB)
VSWR (:1)
POUTat 1dB
COMPR.(dBm)
NOISEFIGURE
(dB)
OUTPUTIP3
(dBm)
IN OUT 50.00 21.87 2.52 1.44 1.39 18.4 3.6 34.2 500.00 21.28 3.10 1.18 1.31 18.5 3.6 33.7 1000.00 21.04 3.28 1.12 1.46 18.5 3.7 32.3 1400.00 20.80 3.36 1.14 1.54 18.5 3.7 32.2 1600.00 20.66 3.38 1.19 1.55 18.4 3.7 31.8 1800.00 20.49 3.46 1.26 1.55 18.3 3.7 31.8 2000.00 20.29 3.59 1.34 1.53 17.8 3.7 31.2 2400.00 19.88 3.84 1.52 1.47 17.4 3.7 30.5 3000.00 19.21 4.43 1.81 1.38 16.1 3.8 28.8 3400.00 18.74 4.89 1.89 1.31 15.8 3.8 28.8 3800.00 18.22 5.37 1.84 1.19 15.3 3.9 28.0 4000.00 17.96 5.65 1.81 1.13 15.0 3.8 27.7 4600.00 17.09 6.64 1.62 1.21 14.1 3.9 26.4 5000.00 16.59 7.17 1.51 1.35 13.5 4.0 25.7 5500.00 16.23 7.59 1.47 1.61 12.8 4.2 24.8 6000.00 15.41 8.40 1.54 1.69 12.1 4.3 23.9
6802.0036 BP350J Rev. C 01/10
High-efficiency photovoltaic module using silicon nitride multicrystalline silicon cells. Performance
Rated power (Pmax) 50W Power tolerance ± 10% Nominal voltage 12V Limited Warranty1 25 years
Configuration
J Clear universal frame and standard J-Box Electrical Characteristics2 BP 350
Maximum power (Pmax)3 50W
Voltage at Pmax (Vmp) 17.5V Current at Pmax (Imp) 2.9A Warranted minimum Pmax 45W Short-circuit current (Isc) 3.2A Open-circuit voltage (Voc) 21.8V Temperature coefficient of Isc (0.065±0.015)%/ °C Temperature coefficient of Voc -(80±10)mV/°C Temperature coefficient of power -(0.5±0.05)%/ °C NOCT (Air 20°C; Sun 0.8kW/m2 ; wind 1m/s) 47±2°C Maximum series fuse rating 20A Maximum system voltage 50V (U.S. NEC rating)
Mechanical Characteristics
Dimensions Length: 839mm (33”) Width: 537mm (21.1”) Depth: 50mm (1.97”)
Weight 6.0 kg (13.2 pounds)
Solar Cells 72 cells (42mm x 125mm) in a 4x18 matrix connected in 2 parallel strings of 36 in series
Junction Box J-Version junction box with 4-terminal connection block; IP 65, accepts PG 13.5,
M20, ½ inch conduit, or cable fittings accepting 6-12mm diameter cable. Terminals accept 2.5 to 10mm2 (8 to 14 AWG) wire.
Diodes One 9A, 45V Schottky by-pass diode included
Construction Front: High-transmission 3mm (1/8th inch) tempered glass; Back: White Polyester;
Encapsulant: EVA
Frame Clear anodized aluminum alloy type 6063T6 Universal frame; Color: silver
BP 350 50 Watt Photovoltaic Module
©BP Solar 2010
1. Module Warranty: 25-year limited warranty of 85% power output; 12-year limited warranty of 93% power output; 5-year limited warranty of materials and workmanship. See your local representative for full terms of these warranties. 2. This data represents the performance of typical BP modules, and are based on measurements made in accordance with ASTM E1036 corrected to SRC (STC.) 3. During the stabilization process that occurs during the first few months of deployment, module power may decrease by approx. 1% from typical Pmax.
6802.0036 BP350J Rev. C 01/10
Quality and Safety
Listed to UL 1703 Standard for safety by Intertek ETL (Class C fire rating)
Approved by Intertek ETL for use in NEC Class 1, Division 2, Groups A to D hazardous locations.
Qualification Test Parameters
Temperature cycling range -40°C to +85°C (-40°F to 185°F) Humidity freeze, damp heat 85% RH Static load front and back (e.g. wind) 50psf (2400 pascals) Front loading (e.g. snow) 113psf (5400 pascals) Hailstone impact 25mm (1 inch) at 23 m/s (52mph)
Module Diagram Dimensions in brackets are in inches. Un-bracketed dimensions are in millimeters. Overall tolerances ±3mm (1/8”)
72 [2.8]4 PLCS
581 [22.9]2 PLCS
129 [5.1]
839 [33.0]MODULE LENGTH
WITH SCREWHEADS
Ø6.8MTG. HOLES
8 PLACES
57 [2.3]INCLUDINGSCREW HEAD4 PLCS
2.8 MAXSCREW HEADPROJECTION
8 PLACES
508 [20.0]
GROUND HOLE2 PLACES
537 [21.2]
Back View
Front View
A A
11.1 [0.44]
27 [1.1]
Section A - A
50 [2.0] 2.4 [0.09]
JUNCTION BOX
Top View (Lid open)
BPJB(+)
BP350J
Included with each module: self-tapping grounding screw, instruction sheet, and warranty document.
Note: This publication summarizes product warranty and specifications, which are subject to change without notice. Additional information may be found on our web site: www.bpsolar.com
©BP Solar 2010
BP350 I-V Curves
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0 10 20 30Voltage (V)
Cur
rent
(A)
t=0Ct=25Ct=50Ct=75C
GENASUN GV-4 (ALL MODELS) MANUAL, REVISION 2.0 | 01.2018
GV-4-Pb-12V: 12V Lead-Acid/AGM/Gel/Sealed/Flooded
GV-4P-Pb-12V: 12V Lead-Acid/AGM/Gel/Sealed/Flooded
GV-4-Pb-CV: 12V Custom Multi-Stage Lead-Acid/AGM/Gel/
Sealed/Flooded
GV-4 Manual
For models:
Solar Charge Controller with Maximum Power Point Tracking
IMPORTANT SAFETY INSTRUCTIONS | SAVE THESE INSTRUCTIONS
4A / 50Wwww.genasun.com
GENASUN c/o BLUE SKY ENERGY
2598 FORTUNE WAY • SUITE KVISTA, CA 92081 • USA
This manual contains important instructions for the GV-4-Pb-12V, GV-4P-Pb-12V, and GV-4-Pb-CV solar charge controller that shall be followed during installation and maintenance.
The GV-4 is intended for charging 12V Lead-Acid, AGM, Gel, Sealed, and Flooded batteries. Consult your battery charging specifications to ensure that the GV-4 is compatible with your chosen batteries. The GV-4 does not include a fuse. Overcurrent protection suitable for the application must be provided by the user.WARNING: EXPLOSION HAZARD. DO NOT CONNECT OR DISCONNECT WHEN ENERGIZED. DO NOT DISCONNECT WHILE THE CIRCUIT IS LIVE OR UNLESS THE AREA IS FREE OF IGNITABLE CONCENTRATIONS.ATTENTION: RISQUE D'EXPLOSION. NE PAS CONNECTER NI DÉCONNECTER PAS LORSQU'IL EST SOUS TENSION. NE PAS CONNECTER LE CIRCUIT ALORS QUE EST VIVANT OU A MOINS QUE LA ZONE EST LIBRE DE CONCENTRATIONS IGNITAIRES.
CAUTION: INTERNAL TEMPERATURE COMPENSATION. RISK OF FIRE, USE WITHIN 0.3 m (1 ft) of BATTERIES. Lead-acid batteries can create explosive gases. Short circuits can draw thousands of amps from a battery. Carefully read and follow all instructions supplied with the battery. Use only 12V lead-acid batteries with the GV-4-Pb-12V and GV-4-Pb-CV.
DO NOT SHORT CIRCUIT the solar array when plugged into the controller. DO NOT MEASURE SHORT CIRCUIT CURRENT of the array while connected to the controller. This may damage the controller, and such damage will not be covered under warranty.
Grounding is not necessary for operation and is at the user's discretion. If the GV-4 is to be used with a solar array electrically connected to earth ground, please note the following: WARNING: THIS UNIT IS NOT PROVIDED WITH A GFDI DEVICE. Consult Article 690 of the National Electrical Code (or the standards in force at the installation location) to determine whether a GFDI is necessary for your installation.
Safety Instructions:
WARNING: THIS UNIT IS NOT PROVIDED WITH DISCONNECT DEVICES. Consult Article 690 of the National Electrical Code (or the standards in force at the installation location) to determine whether disconnect devices are necessary for your installation.
Use only 12-30 AWG (3.0 mm2 max) copper conductors suitable for a minimum of 60 degrees C. If operation at high power or at high ambient temperatures is expected, wire with a higher temperature rating may be necessary.Recommended terminal block tightening torque: 3-5 in-lbs, 0.35-0.55 Nm.
Inspection & Maintenance
No user-serviceable parts inside.
Inspect the controller at least once per year to ensure proper performance.• Check for animal or insect damage.• Inspect for corrosion / water damage.• Inspect the security of all connections.• Ensure the solar array does not exceed the maximum input voltage.• Repair and clean as necessary.
Installation & System Connections:
MOUNTINGMount the controller near your battery securely using the holes provided on the enclosure’s flanges
or with a means appropriate to the application.
• Mount near the battery (use within 0.3 m (1 ft) of batteries. See Caution, p.2).
• The GV-4 can be mounted in any orientation on the floor or wall. We recommend a position in
which all labels are clearly visible.
• Do not expose to water.
• Do not mount in direct sunlight or near a source of heat.
• Allow adequate airflow around the controller to achieve maximum output capability.
• For outdoor use, the controller must be housed in an enclosure providing protection at least
equivalent to NEMA Type 3.
1
• Connections should be made according to Article 690 of the National Electrical Code
(NFPA 70) or the standards in force at the installation location.
• Electrical connections may be made in any order; however the sequence below is
recommended.
Note*: The positive or negative battery cable must be protected by a fast-acting fuse or circuit breaker of 10A or less, rated for the maximum battery voltage and connected close to the bat-tery terminal or power distribution block. This fuse will protect the wiring in the event of a short circuit or controller damage.
BATTERYPANEL
GV-4
*FUSE
2
3
CONNECTING THE SOLAR PANELConnect the solar panel to the +PANEL and –PANEL terminals.
• In most applications, the panel should be connected only to the GV-4.
• Never connect the panel negative to the battery negative, as your batteries may
be damaged.
• Do not use blocking diodes for single-panel installations. The GV-4 prevents
reverse-current flow.
• If multiple panels are being used in parallel, blocking diodes are recommended in
series with each panel, unless the panel manufacturer recommends otherwise.
• Solar panel voltage rises in cold weather. Check that the solar panel open circuit
voltage (Voc) will remain below the maximum input voltage of the GV-4 at the
coldest possible expected temperature.
CONNECTING THE BATTERYConnect the battery to the +BATT and –BATT terminals.
• A small spark while connecting the battery is ok.
• Any loads should be connected directly to the battery. The GV-4 does not provide
protection against over-discharge.
CAUTION, RISK OF FIRE OR EXPLOSION: Do not make the final battery connection
near lead-acid batteries that have recently been charging.
The GV-4 has a MULTICOLOR LED.Learn about this indicator on the following page.
Note: Drip loop to protect charge controller from water.
Note: In the GV-4, the positive side of the battery is connected internally to the
positive side of the solar panel.
LED RUN/CHARGE INDICATIONStandby: The battery is connected properly and ready to charge when solar panel power is available.
8-10 SEC. BETWEEN GREEN BLINKS
Charging (low current, less than 0.15A):
4-5 SEC. BETWEEN GREEN BLINKS
Charging (between 0.15A - 1.5A):
FAST GREEN BLINKS
Charging (high current, more than 1.5A):
LONGER, SLOWER GREEN BLINKS
Charging (current limit): charging at current limit. The GV-4 is overloaded and limiting charging current.
LONG, THEN SHORT GREEN BLINKS
Battery Charged: The battery is in the absorption or float charging stage.
SOLID GREEN LED
LED ERROR INDICATION
Overheat: The controller’s internal temperature is too high.
SETS OF 2 RED BLINKS.
Overload: This could be caused by changing the solar panel connections while the controller is operating.
SETS OF 3 RED BLINKS.
Battery voltage too low: The controller cannot begin charging due to low battery voltage. If the nominal battery voltage is correct (12V), charge the battery by some other means before use.
SETS OF 4 RED BLINKS
Battery voltage too high: If the nominal battery voltage is correct (12V), check the functioning of other chargers that may be connected to the system.
SETS OF 5 RED BLINKS.
Panel voltage too high: Only 12V nominal solar panels may be used with this controller.
SETS OF 6 RED BLINKS.
Internal Error: Contact your dealer for assistance.
2 LONG BLINKS, FOLLOWED BY ANY NUMBER
OF SHORT BLINKS.
The GV-4 has a MULTICOLOR LED
Status Indication:
TroubleshootingIf the LED Indicator will not light, or displays an indication not listed in this manual:• Verify correct battery polarity;• Check that there is a solid electrical connection to the battery;• Check that battery voltage appears on the GV-4 battery terminal screws;• Check the GV-4 terminal area for evidence of water or mechanical damage.The GV-4 will not operate without a battery. If the system appears to be overcharging or the GV-4 will not begin charging, ensure that the solar panel is wired only to the GV-4, and in particular that the solar panel negative terminal is not connected to ground (battery negative). If the GV-4 does not appear to be charging, note that the GV-4 waits up to one minute before trying to restart if is has shut down due to lack of power from the solar panel. For more in-depth system troubleshooting, please visit the support area of our website: www.genasun.com/support/
Specifications: GV-4-Pb-12V
Maximum Recommended Panel Power: 50W
Rated Battery (Output) Current: 4A
Nominal Battery Voltage: 12V
Maximum Input Voltage: 27V
Recommended Max Panel Voc at STC: 22V
Minimum Battery Voltage for Operation: 7.2V
Input Voltage Range: 0-27V
Maximum Input Short Circuit Current*: 4A
Maximum Input Current**: 7A
*Panel Isc. Maximum input power and maximum input voltage requirements must also be respected. **Maximum current that the controller could draw from an unlimited source.
Copyright © 2018 Genasun. All rights reserved. Changes are periodically made to the information herein which will be incorporated in revised editions of this publication. Genasun may make
changes or improvements to the product(s) described in this publication at any time and without notice.
Charge Profile: Multi-Stage with Temperature Compensation
Absorption Voltage: 14.2V
Absorption Time: 2 Hours
Float Voltage: 13.8V
Charging Output Voltage Range: 7.2-18V
Battery Temperature Compensation: -28mV/°C
Operating Temperature: -40°C – 85°C
Maximum Full Power Ambient: 50°C
Electrical Efficiency: 96% - 99.85% typical
Tracking Efficiency: 99% typical
MPPT Tracking Speed: 15Hz
Operating Consumption: 0.125mA (125uA)
Night Consumption: 0.09mA (90uA)
Environmental Protection: IP40, Nickel-Plated Brass & Stainless Hardware
Connection: 4-position terminal block for 12-30AWG wire
Weight: 2.8 oz., 80 g
Dimensions: 4.3 x 2.2 x 0.9", 11 x 5.6 x 2.5 cm
Warranty: 5 years
Specifications (cont.): GV-4-Pb-12V
Certifications:
1216
2009 San Bernardino Road | West Covina, CA 91790
626.813.1234 626.813.1235
www.sunxtender.comA Division of Concorde Battery Corp.
VRLA-AGM Deep Cycle Battery for Off Grid and Grid Tied Systems.
Sun Xtender batteries provide safe, reliable and long lasting power. Environmentally friendly, there is no exposed lead on Sun Xtender batteries and they are 100 percent recyclable. Sustainable, Clean, Renewable Energy Storage.
Since 1987, Sun Xtender Battery has been designing valve regulated lead acid batteries with AGM construction (VRLA-AGM).The non-spillable construction prohibits any electrolyte leaking or spewing, allowing the battery to be used upright or on its end or side. The maintenance free AGM design means no water replenishment ever.
Utilizing pure lead calcium grids, the plates are thicker than the industry standard for longer cycle life, increased reliability and power. The low impedance AGM design allows for excellent charge acceptance and there is no current limit required with controlled voltage charging.
PVX-340T and the complete Sun Xtender Battery product line features proprietary PolyGuard® Microporous Polyethylene Separators, shielding the positive plates against shorting, shock or vibration. No other manufacturers offer this dual layer insulation protection feature.
Sun Xtender Battery covers and containers are uniquely molded with high impact, reinforced copolymer polypropylene and are designed with thick end walls to prevent bulging. The copper alloy T Terminals are corrosion resistant and are supplied with silicon bronze bolts and washers.
All Sun Xtender Batteries ship Hazmat Exempt.
PVX-340T SpecificationsVoltage 12 Volts
Industry Reference U1
Maximum Weight 25 LB / 11.4 KG
Nominal Capacity Ampere Hours @ 25° C (77° F) to 1.75 volts per cell
1 Hr. Rate 2 Hr. Rate 4 Hr. Rate 8 Hr. Rate 24 Hr. Rate 100 Hr. Rate
21 Ah 27 Ah 28 Ah 30 Ah 34 Ah 37 Ah
Specifications are subject to change without notice. The data/information contained herein has been reviewed & approved for general release on the basis that this document contains no export controlled information.
PVX-340T
7.71(195.9 MM)
6.89(175.0 MM)
7.51(190.9 MM)
6.19(157.2 MM)
6.69(169.9 MM)
5.18(131.6 MM)
4.97(126.2 MM)
2 M6 TERMINALS
PVX-340T SOLAR BATTERY
M6 Threaded Insert Standard Terminals (Copper Alloy)M6 Threaded Inserts are used for PVX-340T & PVX-420T only. All batteries with a “T” at the end of the part number incorporate M8 threaded insert terminals, all batteries are supplied with silicon bronze bolts, nuts, and washers required for installation.
C: 0 M: 35 Y: 72 K: 0 C: 100 M: 0 Y: 0 K: 0
SOLAR BATTERY
©2006 Fairchild Semiconductor Corporation
1
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LM78XX/LM78XXA Rev. 1.0.1
LM
78XX
/LM
78XX
A 3-Term
inal 1A
Po
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May 2006
LM78XX/LM78XXA3-Terminal 1A Positive Voltage Regulator
Features
Output Current up to 1A
Output Voltages of 5, 6, 8, 9, 10, 12, 15, 18, 24
Thermal Overload Protection
Short Circuit Protection
Output Transistor Safe Operating Area Protection
General Description
The LM78XX series of three terminal positive regulatorsare available in the TO-220 package and with severalfixed output voltages, making them useful in a widerange of applications. Each type employs internal currentlimiting, thermal shut down and safe operating area pro-tection, making it essentially indestructible. If adequateheat sinking is provided, they can deliver over 1A outputcurrent. Although designed primarily as fixed voltageregulators, these devices can be used with external com-ponents to obtain adjustable voltages and currents.
Ordering Information
Product Number Output Voltage Tolerance Package Operating Temperature
LM7805CT
±
4% TO-220 -40°C to +125°C
LM7806CT
LM7808CT
LM7809CT
LM7810CT
LM7812CT
LM7815CT
LM7818CT
LM7824CT
LM7805ACT
±
2% 0°C to +125°C
LM7806ACT
LM7808ACT
LM7809ACT
LM7810ACT
LM7812ACT
LM7815ACT
LM7818ACT
LM7824ACT
2
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LM78XX/LM78XXA Rev. 1.0.1
LM
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A 3-Term
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Po
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Block Diagram
Figure 1.
Pin Assignment
Figure 2.
Absolute Maximum Ratings
Absolute maximum ratings are those values beyond which damage to the device may occur. The datasheet specifications should be met, without exception, to ensure that the system design is reliable over its power supply, temperature, and output/input loading variables. Fairchild does not recommend operation outside datasheet specifications.
Symbol Parameter Value Unit
V
I
Input Voltage V
O
= 5V to 18V 35 V
V
O
= 24V 40 V
R
θ
JC
Thermal Resistance Junction-Cases (TO-220) 5 °C/W
R
θ
JA
Thermal Resistance Junction-Air (TO-220) 65 °C/W
T
OPR
Operating Temperature Range
LM78xx -40 to +125 °C
LM78xxA 0 to +125
T
STG
Storage Temperature Range -65 to +150 °C
StartingCircuit
Input
1
ReferenceVoltage
CurrentGenerator
SOAProtection
ThermalProtection
Series PassElement
ErrorAmplifier
Output
3
GND
2
11. Input2. GND3. Output
GND
TO-220
3
www.fairchildsemi.com
LM78XX/LM78XXA Rev. 1.0.1
LM
78XX
/LM
78XX
A 3-Term
inal 1A
Po
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e Reg
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Electrical Characteristics (LM7805)
Refer to the test circuits. -40°C
<
T
J
<
125°C, I
O
= 500mA, V
I
= 10V, C
I
= 0.1
µ
F, unless otherwise specified.
Notes:
1. Load and line regulation are specified at constant junction temperature. Changes in V
O
due to heating effects mustbe taken into account separately. Pulse testing with low duty is used.
2. These parameters, although guaranteed, are not 100% tested in production.
Symbol Parameter Conditions Min. Typ. Max. Unit
V
O
Output Voltage T
J
= +25°C 4.8 5.0 5.2 V
5mA
≤
I
O
≤
1A, P
O
≤
15W, V
I
= 7V to 20V4.75 5.0 5.25
Regline Line Regulation
(1)
T
J
= +25°C V
O
= 7V to 25V – 4.0 100 mV
V
I
= 8V to 12V – 1.6 50.0
Regload Load Regulation
(1)
T
J
= +25°C I
O
= 5mA to 1.5A – 9.0 100 mV
I
O
= 250mA to 750mA – 4.0 50.0
I
Q
Quiescent Current T
J
= +25°C – 5.0 8.0 mA
∆
I
Q
Quiescent Current Change I
O
= 5mA to 1A – 0.03 0.5 mA
V
I
= 7V to 25V – 0.3 1.3
∆
V
O
/
∆
T Output Voltage Drift
(2)
I
O
= 5mA – -0.8 – mV/°C
V
N
Output Noise Voltage f = 10Hz to 100kHz, T
A
= +25°C – 42.0 –
µ
V/V
O
RR Ripple Rejection
(2)
f = 120Hz, V
O
= 8V to 18V 62.0 73.0 – dB
V
DROP
Dropout Voltage I
O
= 1A, T
J
= +25°C – 2.0 – V
r
O
Output Resistance
(2)
f = 1kHz – 15.0 – m
Ω
I
SC
Short Circuit Current V
I
= 35V, T
A
= +25°C – 230 – mA
I
PK
Peak Current
(2)
T
J
= +25°C – 2.2 – A
4
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LM78XX/LM78XXA Rev. 1.0.1
LM
78XX
/LM
78XX
A 3-Term
inal 1A
Po
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e Reg
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Electrical Characteristics (LM7806)
(Continued)Refer to the test circuits. -40°C
<
T
J
<
125°C, I
O
= 500mA, V
I
= 11V, C
I
= 0.33
µ
F, C
O
= 0.1
µ
F, unless otherwise specified.
Notes:
3. Load and line regulation are specified at constant junction temperature. Changes in V
O
due to heating effects mustbe taken into account separately. Pulse testing with low duty is used.
4. These parameters, although guaranteed, are not 100% tested in production.
Symbol Parameter Conditions Min Typ. Max. Unit
V
O
Output Voltage T
J
= +25°C 5.75 6.0 6.25 V
5mA
≤
I
O
≤
1A, P
O
≤
15W, V
I
= 8.0V to 21V5.7 6.0 6.3
Regline Line Regulation
(3)
T
J
= +25°C V
I
= 8V to 25V – 5.0 120 mV
V
I
= 9V to 13V – 1.5 60.0
Regload Load Regulation
(3)
T
J
= +25°C I
O
= 5mA to 1.5A – 9.0 120 mV
I
O
= 250mA to 750mA – 3.0 60.0
I
Q
Quiescent Current T
J
= +25°C – 5.0 8.0 mA
∆
I
Q
Quiescent Current Change
I
O
= 5mA to 1A – – 0.5 mA
V
I
= 8V to 25V – – 1.3
∆
V
O
/
∆
T Output Voltage Drift
(4)
I
O
= 5mA – -0.8 – mV/°C
V
N
Output Noise Voltage f = 10Hz to 100kHz, T
A
= +25°C – 45.0 –
µ
V/V
O
RR Ripple Rejection
(4)
f = 120Hz, V
O
= 8V to 18V 62.0 73.0 – dB
VDROP Dropout Voltage IO = 1A, TJ = +25°C – 2.0 – V
rO Output Resistance(4) f = 1kHz – 19.0 – mΩ
ISC Short Circuit Current VI = 35V, TA = +25°C – 250 – mA
IPK Peak Current(4) TJ = +25°C – 2.2 – A
5 www.fairchildsemi.comLM78XX/LM78XXA Rev. 1.0.1
LM
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Electrical Characteristics (LM7808) (Continued)Refer to the test circuits. -40°C < TJ < 125°C, IO = 500mA, VI = 14V, CI = 0.33µF, CO = 0.1µF, unless otherwise specified.
Notes:5. Load and line regulation are specified at constant junction temperature. Changes in VO due to heating effects must
be taken into account separately. Pulse testing with low duty is used.6. These parameters, although guaranteed, are not 100% tested in production.
Symbol Parameter Conditions Min. Typ. Max. Unit
VO Output Voltage TJ = +25°C 7.7 8.0 8.3 V
5mA ≤ IO ≤ 1A, PO ≤ 15W, VI = 10.5V to 23V
7.6 8.0 8.4
Regline Line Regulation(5) TJ = +25°C VI = 10.5V to 25V – 5.0 160 mV
VI = 11.5V to 17V – 2.0 80.0
Regload Load Regulation(5) TJ = +25°C IO = 5mA to 1.5A – 10.0 160 mV
IO = 250mA to 750mA – 5.0 80.0
IQ Quiescent Current TJ = +25°C – 5.0 8.0 mA
∆IQ Quiescent Current Change IO = 5mA to 1A – 0.05 0.5 mA
VI = 10.5V to 25V – 0.5 1.0
∆VO/∆T Output Voltage Drift(6) IO = 5mA – -0.8 – mV/°C
VN Output Noise Voltage f = 10Hz to 100kHz, TA = +25°C – 52.0 – µV/VO
RR Ripple Rejection(6) f = 120Hz, VO = 11.5V to 21.5V 56.0 73.0 – dB
VDROP Dropout Voltage IO = 1A, TJ = +25°C – 2.0 – V
rO Output Resistance(6) f = 1kHz – 17.0 – mΩ
ISC Short Circuit Current VI = 35V, TA = +25°C – 230 – mA
IPK Peak Current(6) TJ = +25°C – 2.2 – A
6 www.fairchildsemi.comLM78XX/LM78XXA Rev. 1.0.1
LM
78XX
/LM
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A 3-Term
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Electrical Characteristics (LM7809) (Continued)Refer to the test circuits. -40°C < TJ < 125°C, IO = 500mA, VI = 15V, CI = 0.33µF, CO = 0.1µF, unless otherwise specified.
Notes:7. Load and line regulation are specified at constant junction temperature. Changes in VO due to heating effects must
be taken into account separately. Pulse testing with low duty is used.8. These parameters, although guaranteed, are not 100% tested in production.
Symbol Parameter Conditions Min. Typ. Max. Unit
VO Output Voltage TJ = +25°C 8.65 9.0 9.35 V
5mA ≤ IO ≤ 1A, PO ≤ 15W, VI = 11.5V to 24V
8.6 9.0 9.4
Regline Line Regulation(7) TJ = +25°C VI = 11.5V to 25V – 6.0 180 mV
VI = 12V to 17V – 2.0 90.0
Regload Load Regulation(7) TJ = +25°C IO = 5mA to 1.5A – 12.0 180 mV
IO = 250mA to 750mA – 4.0 90.0
IQ Quiescent Current TJ = +25°C – 5.0 8.0 mA
∆IQ Quiescent Current Change IO = 5mA to 1A – – 0.5 mA
VI = 11.5V to 26V – – 1.3
∆VO/∆T Output Voltage Drift(8) IO = 5mA – -1.0 – mV/°C
VN Output Noise Voltage f = 10Hz to 100kHz, TA = +25°C – 58.0 – µV/VO
RR Ripple Rejection(8) f = 120Hz, VO = 13V to 23V 56.0 71.0 – dB
VDROP Dropout Voltage IO = 1A, TJ = +25°C – 2.0 – V
rO Output Resistance(8) f = 1kHz – 17.0 – mΩ
ISC Short Circuit Current VI = 35V, TA = +25°C – 250 – mA
IPK Peak Current(8) TJ = +25°C – 2.2 – A
7 www.fairchildsemi.comLM78XX/LM78XXA Rev. 1.0.1
LM
78XX
/LM
78XX
A 3-Term
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Po
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e Reg
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Electrical Characteristics (LM7810) (Continued)Refer to the test circuits. -40°C < TJ < 125°C, IO = 500mA, VI = 16V, CI = 0.33µF, CO = 0.1µF, unless otherwise specified.
Notes:9. Load and line regulation are specified at constant junction temperature. Changes in VO due to heating effects must
be taken into account separately. Pulse testing with low duty is used.10. These parameters, although guaranteed, are not 100% tested in production.
Symbol Parameter Conditions Min. Typ. Max. Unit
VO Output Voltage TJ = +25°C 9.6 10.0 10.4 V
5mA ≤ IO ≤ 1A, PO ≤ 15W, VI = 12.5V to 25V
9.5 10.0 10.5
Regline Line Regulation(9) TJ = +25°C VI = 12.5V to 25V – 10.0 200 mV
VI = 13V to 25V – 3.0 100
Regload Load Regulation(9) TJ = +25°C IO = 5mA to 1.5A – 12.0 200 mV
IO = 250mA to 750mA – 4.0 400
IQ Quiescent Current TJ = +25°C – 5.1 8.0 mA
∆IQ Quiescent Current Change IO = 5mA to 1A – – 0.5 mA
VI = 12.5V to 29V – – 1.0
∆VO/∆T Output Voltage Drift(10) IO = 5mA – -1.0 – mV/°C
VN Output Noise Voltage f = 10Hz to 100kHz, TA = +25°C – 58.0 – µV/VO
RR Ripple Rejection(10) f = 120Hz, VO = 13V to 23V 56.0 71.0 – dB
VDROP Dropout Voltage IO = 1A, TJ = +25°C – 2.0 – V
rO Output Resistance(10) f = 1kHz – 17.0 – mΩ
ISC Short Circuit Current VI = 35V, TA = +25°C – 250 – mA
IPK Peak Current(10) TJ = +25°C – 2.2 – A
8 www.fairchildsemi.comLM78XX/LM78XXA Rev. 1.0.1
LM
78XX
/LM
78XX
A 3-Term
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Po
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Electrical Characteristics (LM7812) (Continued)Refer to the test circuits. -40°C < TJ < 125°C, IO = 500mA, VI = 19V, CI = 0.33µF, CO = 0.1µF, unless otherwise specified.
Notes:11. Load and line regulation are specified at constant junction temperature. Changes in VO due to heating effects must
be taken into account separately. Pulse testing with low duty is used.12. These parameters, although guaranteed, are not 100% tested in production.
Symbol Parameter Conditions Min. Typ. Max. Unit
VO Output Voltage TJ = +25°C 11.5 12.0 12.5 V
5mA ≤ IO ≤ 1A, PO ≤ 15W, VI = 14.5V to 27V
11.4 12.0 12.6
Regline Line Regulation(11) TJ = +25°C VI = 14.5V to 30V – 10.0 240 mV
VI = 16V to 22V – 3.0 120
Regload Load Regulation(11) TJ = +25°C IO = 5mA to 1.5A – 11.0 240 mV
IO = 250mA to 750mA – 5.0 120
IQ Quiescent Current TJ = +25°C – 5.1 8.0 mA
∆IQ Quiescent Current Change IO = 5mA to 1A – 0.1 0.5 mA
VI = 14.5V to 30V – 0.5 1.0
∆VO/∆T Output Voltage Drift(12) IO = 5mA – -1.0 – mV/°C
VN Output Noise Voltage f = 10Hz to 100kHz, TA = +25°C – 76.0 – µV/VO
RR Ripple Rejection(12) f = 120Hz, VI = 15V to 25V 55.0 71.0 – dB
VDROP Dropout Voltage IO = 1A, TJ = +25°C – 2.0 – V
rO Output Resistance(12) f = 1kHz – 18.0 – mΩ
ISC Short Circuit Current VI = 35V, TA = +25°C – 230 – mA
IPK Peak Current(12) TJ = +25°C – 2.2 – A
9 www.fairchildsemi.comLM78XX/LM78XXA Rev. 1.0.1
LM
78XX
/LM
78XX
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Electrical Characteristics (LM7815) (Continued)Refer to the test circuits. -40°C < TJ < 125°C, IO = 500mA, VI = 23V, CI = 0.33µF, CO = 0.1µF, unless otherwise specified.
Notes:13. Load and line regulation are specified at constant junction temperature. Changes in VO due to heating effects must
be taken into account separately. Pulse testing with low duty is used.14. These parameters, although guaranteed, are not 100% tested in production.
Symbol Parameter Conditions Min. Typ. Max. Unit
VO Output Voltage TJ = +25°C 14.4 15.0 15.6 V
5mA ≤ IO ≤ 1A, PO ≤ 15W, VI = 17.5V to 30V
14.25 15.0 15.75
Regline Line Regulation(13) TJ = +25°C VI = 17.5V to 30V – 11.0 300 mV
VI = 20V to 26V – 3.0 150
Regload Load Regulation(13) TJ = +25°C IO = 5mA to 1.5A – 12.0 300 mV
IO = 250mA to 750mA – 4.0 150
IQ Quiescent Current TJ = +25°C – 5.2 8.0 mA
∆IQ Quiescent Current Change IO = 5mA to 1A – – 0.5 mA
VI = 17.5V to 30V – – 1.0
∆VO/∆T Output Voltage Drift(14) IO = 5mA – -1.0 – mV/°C
VN Output Noise Voltage f = 10Hz to 100kHz, TA = +25°C – 90.0 – µV/VO
RR Ripple Rejection(14) f = 120Hz, VI = 18.5V to 28.5V 54.0 70.0 – dB
VDROP Dropout Voltage IO = 1A, TJ = +25°C – 2.0 – V
rO Output Resistance(14) f = 1kHz – 19.0 – mΩ
ISC Short Circuit Current VI = 35V, TA = +25°C – 250 – mA
IPK Peak Current(14) TJ = +25°C – 2.2 – A
10 www.fairchildsemi.comLM78XX/LM78XXA Rev. 1.0.1
LM
78XX
/LM
78XX
A 3-Term
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Electrical Characteristics (LM7818) (Continued)Refer to the test circuits. -40°C < TJ < 125°C, IO = 500mA, VI = 27V, CI = 0.33µF, CO = 0.1µF, unless otherwise specified.
Notes:15. Load and line regulation are specified at constant junction temperature. Changes in VO due to heating effects must
be taken into account separately. Pulse testing with low duty is used.16. These parameters, although guaranteed, are not 100% tested in production.
Symbol Parameter Conditions Min. Typ. Max. Unit
VO Output Voltage TJ = +25°C 17.3 18.0 18.7 V
5mA ≤ IO ≤ 1A, PO ≤ 15W, VI = 21V to 33V
17.1 18.0 18.9
Regline Line Regulation(15) TJ = +25°C VI = 21V to 33V – 15.0 360 mV
VI = 24V to 30V – 5.0 180
Regload Load Regulation(15) TJ = +25°C IO = 5mA to 1.5A – 15.0 360 mV
IO = 250mA to 750mA – 5.0 180
IQ Quiescent Current TJ = +25°C – 5.2 8.0 mA
∆IQ Quiescent Current Change IO = 5mA to 1A – – 0.5 mA
VI = 21V to 33V – – 1.0
∆VO/∆T Output Voltage Drift(16) IO = 5mA – -1.0 – mV/°C
VN Output Noise Voltage f = 10Hz to 100kHz, TA = +25°C – 110 – µV/VO
RR Ripple Rejection(16) f = 120Hz, VI = 22V to 32V 53.0 69.0 – dB
VDROP Dropout Voltage IO = 1A, TJ = +25°C – 2.0 – V
rO Output Resistance(16) f = 1kHz – 22.0 – mΩ
ISC Short Circuit Current VI = 35V, TA = +25°C – 250 – mA
IPK Peak Current(16) TJ = +25°C – 2.2 – A
11 www.fairchildsemi.comLM78XX/LM78XXA Rev. 1.0.1
LM
78XX
/LM
78XX
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Electrical Characteristics (LM7824) (Continued)Refer to the test circuits. -40°C < TJ < 125°C, IO = 500mA, VI = 33V, CI = 0.33µF, CO = 0.1µF, unless otherwise specified.
Notes:17. Load and line regulation are specified at constant junction temperature. Changes in VO due to heating effects must
be taken into account separately. Pulse testing with low duty is used.18. These parameters, although guaranteed, are not 100% tested in production.
Symbol Parameter Conditions Min. Typ. Max. Unit
VO Output Voltage TJ = +25°C 23.0 24.0 25.0 V
5mA ≤ IO ≤ 1A, PO ≤ 15W, VI = 27V to 38V
22.8 24.0 25.25
Regline Line Regulation(17) TJ = +25°C VI = 27V to 38V – 17.0 480 mV
VI = 30V to 36V – 6.0 240
Regload Load Regulation(17) TJ = +25°C IO = 5mA to 1.5A – 15.0 480 mV
IO = 250mA to 750mA – 5.0 240
IQ Quiescent Current TJ = +25°C – 5.2 8.0 mA
∆IQ Quiescent Current Change IO = 5mA to 1A – 0.1 0.5 mA
VI = 27V to 38V – 0.5 1.0
∆VO/∆T Output Voltage Drift(18) IO = 5mA – -1.5 – mV/°C
VN Output Noise Voltage f = 10Hz to 100kHz, TA = +25°C – 60.0 – µV/VO
RR Ripple Rejection(18) f = 120Hz, VI = 28V to 38V 50.0 67.0 – dB
VDROP Dropout Voltage IO = 1A, TJ = +25°C – 2.0 – V
rO Output Resistance(18) f = 1kHz – 28.0 – mΩ
ISC Short Circuit Current VI = 35V, TA = +25°C – 230 – mA
IPK Peak Current(18) TJ = +25°C – 2.2 – A
12 www.fairchildsemi.comLM78XX/LM78XXA Rev. 1.0.1
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Electrical Characteristics (LM7805A) (Continued)Refer to the test circuits. 0°C < TJ < 125°C, IO = 1A, VI = 10V, CI = 0.33µF, CO = 0.1µF, unless otherwise specified.
Notes:19. Load and line regulation are specified at constant junction temperature. Changes in VO due to heating effects must
be taken into account separately. Pulse testing with low duty is used.20. These parameters, although guaranteed, are not 100% tested in production.
Symbol Parameter Conditions Min. Typ. Max. Unit
VO Output Voltage TJ = +25°C 4.9 5.0 5.1 V
IO = 5mA to 1A, PO ≤ 15W, VI = 7.5V to 20V
4.8 5.0 5.2
Regline Line Regulation(19) VI = 7.5V to 25V, IO = 500mA – 5.0 50.0 mV
VI = 8V to 12V – 3.0 50.0
TJ = +25°C VI = 7.3V to 20V – 5.0 50.0
VI = 8V to 12V – 1.5 25.0
Regload Load Regulation(19) TJ = +25°C, IO = 5mA to 1.5A – 9.0 100 mV
IO = 5mA to 1A – 9.0 100
IO = 250mA to 750mA – 4.0 50.0
IQ Quiescent Current TJ = +25°C – 5.0 6.0 mA
∆IQ Quiescent Current Change
IO = 5mA to 1A – – 0.5 mA
VI = 8V to 25V, IO = 500mA – – 0.8
VI = 7.5V to 20V, TJ = +25°C – – 0.8
∆VO/∆T Output Voltage Drift(20) IO = 5mA – -0.8 – mV/°C
VN Output Noise Voltage f = 10Hz to 100kHz, TA = +25°C – 10.0 – µV/VO
RR Ripple Rejection(20) f = 120Hz, IO = 500mA, VI = 8V to 18V – 68.0 – dB
VDROP Dropout Voltage IO = 1A, TJ = +25°C – 2.0 – V
rO Output Resistance(20) f = 1kHz – 17.0 – mΩ
ISC Short Circuit Current VI = 35V, TA = +25°C – 250 – mA
IPK Peak Current(20) TJ = +25°C – 2.2 – A
13 www.fairchildsemi.comLM78XX/LM78XXA Rev. 1.0.1
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Electrical Characteristics (LM7806A) (Continued)Refer to the test circuits. 0°C < TJ < 125°C, IO = 1A, VI = 11V, CI = 0.33µF, CO = 0.1µF, unless otherwise specified.
Notes:21. Load and line regulation are specified at constant junction temperature. Changes in VO due to heating effects must
be taken into account separately. Pulse testing with low duty is used.22. These parameters, although guaranteed, are not 100% tested in production.
Symbol Parameter Conditions Min. Typ. Max. Unit
VO Output Voltage TJ = +25°C 5.58 6.0 6.12 V
IO = 5mA to 1A, PO ≤ 15W, VI = 8.6V to 21V
5.76 6.0 6.24
Regline Line Regulation(21) VI = 8.6V to 25V, IO = 500mA – 5.0 60.0 mV
VI = 9V to 13V – 3.0 60.0
TJ = +25°C VI = 8.3V to 21V – 5.0 60.0
VI = 9V to 13V – 1.5 30.0
Regload Load Regulation(21) TJ = +25°C, IO = 5mA to 1.5A – 9.0 100 mV
IO = 5mA to 1A – 9.0 100
IO = 250mA to 750mA – 5.0 50.0
IQ Quiescent Current TJ = +25°C – 4.3 6.0 mA
∆IQ Quiescent Current Change IO = 5mA to 1A – – 0.5 mA
VI = 19V to 25V, IO = 500mA – – 0.8
VI = 8.5V to 21V, TJ = +25°C – – 0.8
∆VO/∆T Output Voltage Drift(22) IO = 5mA – -0.8 – mV/°C
VN Output Noise Voltage f = 10Hz to 100kHz, TA = +25°C – 10.0 – µV/VO
RR Ripple Rejection(22) f = 120Hz, IO = 500mA, VI = 9V to 19V – 65.0 – dB
VDROP Dropout Voltage IO = 1A, TJ = +25°C – 2.0 – V
rO Output Resistance(22) f = 1kHz – 17.0 – mΩ
ISC Short Circuit Current VI = 35V, TA = +25°C – 250 – mA
IPK Peak Current(22) TJ = +25°C – 2.2 – A
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Electrical Characteristics (LM7808A) (Continued)Refer to the test circuits. 0°C < TJ < 125°C, IO = 1A, VI = 14V, CI = 0.33µF, CO = 0.1µF, unless otherwise specified.
Notes:23. Load and line regulation are specified at constant junction temperature. Changes in VO due to heating effects must
be taken into account separately. Pulse testing with low duty is used.24. These parameters, although guaranteed, are not 100% tested in production.
Symbol Parameter Conditions Min. Typ. Max. Unit
VO Output Voltage TJ = +25°C 7.84 8.0 8.16 V
IO = 5mA to 1A, PO ≤ 15W, VI = 10.6V to 23V
7.7 8.0 8.3
Regline Line Regulation(23) VI = 10.6V to 25V, IO = 500mA – 6.0 80.0 mV
VI = 11V to 17V – 3.0 80.0
TJ = +25°C VI = 10.4V to 23V – 6.0 80.0
VI = 11V to 17V – 2.0 40.0
Regload Load Regulation(23) TJ = +25°C, IO = 5mA to 1.5A – 12.0 100 mV
IO = 5mA to 1A – 12.0 100
IO = 250mA to 750mA – 5.0 50.0
IQ Quiescent Current TJ = +25°C – 5.0 6.0 mA
∆IQ Quiescent Current Change IO = 5mA to 1A – – 0.5 mA
VI = 11V to 25V, IO = 500mA – – 0.8
VI = 10.6V to 23V, TJ = +25°C – – 0.8
∆VO/∆T Output Voltage Drift(24) IO = 5mA – -0.8 – mV/°C
VN Output Noise Voltage f = 10Hz to 100kHz, TA = +25°C – 10.0 – µV/VO
RR Ripple Rejection(24) f = 120Hz, IO = 500mA, VI = 11.5V to 21.5V
– 62.0 – dB
VDROP Dropout Voltage IO = 1A, TJ = +25°C – 2.0 – V
rO Output Resistance(24) f = 1kHz – 18.0 – mΩ
ISC Short Circuit Current VI = 35V, TA = +25°C – 250 – mA
IPK Peak Current(24) TJ = +25°C – 2.2 – A
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Electrical Characteristics (LM7809A) (Continued)Refer to the test circuits. 0°C < TJ < 125°C, IO = 1A, VI = 15V, CI = 0.33µF, CO = 0.1µF, unless otherwise specified.
Notes:25. Load and line regulation are specified at constant junction temperature. Changes in VO due to heating effects must
be taken into account separately. Pulse testing with low duty is used.26. These parameters, although guaranteed, are not 100% tested in production.
Symbol Parameter Conditions Min. Typ. Max. Units
VO Output Voltage TJ = +25°C 8.82 9.0 9.16 V
IO = 5mA to 1A, PO ≤ 15W, VI = 11.2V to 24V
8.65 9.0 9.35
Regline Line Regulation(25) VI = 11.7V to 25V, IO = 500mA – 6.0 90.0 mV
VI = 12.5V to 19V – 4.0 45.0
TJ = +25°C VI = 11.5V to 24V – 6.0 90.0
VI = 12.5V to 19V – 2.0 45.0
Regload Load Regulation(25) TJ = +25°C, IO = 5mA to 1.5A – 12.0 100 mV
IO = 5mA to 1A – 12.0 100
IO = 250mA to 750mA – 5.0 50.0
IQ Quiescent Current TJ = +25°C – 5.0 6.0 mA
∆IQ Quiescent Current Change IO = 5mA to 1A – – 0.5 mA
VI = 12V to 25V, IO = 500mA – – 0.8
VI = 11.7V to 25V, TJ = +25°C – – 0.8
∆VO/∆T Output Voltage Drift(26) IO = 5mA – -1.0 – mV/°C
VN Output Noise Voltage f = 10Hz to 100kHz, TA = +25°C – 10.0 – µV/VO
RR Ripple Rejection(26) f = 120Hz, IO = 500mA, VI = 12V to 22V
– 62.0 – dB
VDROP Dropout Voltage IO = 1A, TJ = +25°C – 2.0 – V
rO Output Resistance(26) f = 1kHz – 17.0 – mΩ
ISC Short Circuit Current VI = 35V, TA = +25°C – 250 – mA
IPK Peak Current(26) TJ = +25°C – 2.2 – A
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Electrical Characteristics (LM7810A) (Continued)Refer to the test circuits. 0°C < TJ < 125°C, IO = 1A, VI = 16V, CI = 0.33µF, CO = 0.1µF, unless otherwise specified.
Notes:27. Load and line regulation are specified at constant junction temperature. Changes in VO due to heating effects must
be taken into account separately. Pulse testing with low duty is used.28. These parameters, although guaranteed, are not 100% tested in production.
Symbol Parameter Conditions Min. Typ. Max. Units
VO Output Voltage TJ = +25°C 9.8 10.0 10.2 V
IO = 5mA to 1A, PO ≤ 15W, VI = 12.8V to 25V
9.6 10.0 10.4
Regline Line Regulation(27) VI = 12.8V to 26V, IO = 500mA – 8.0 100 mV
VI = 13V to 20V – 4.0 50.0
TJ = +25°C VI = 12.5V to 25V – 8.0 100
VI = 13V to 20V – 3.0 50.0
Regload Load Regulation(27) TJ = +25°C, IO = 5mA to 1.5A – 12.0 100 mV
IO = 5mA to 1A – 12.0 100
IO = 250mA to 750mA – 5.0 50.0
IQ Quiescent Current TJ = +25°C – 5.0 6.0 mA
∆IQ Quiescent Current Change
IO = 5mA to 1A – – 0.5 mA
VI = 12.8V to 25V, IO = 500mA – – 0.8
VI = 13V to 26V, TJ = +25°C – – 0.5
∆VO/∆T Output Voltage Drift(28) IO = 5mA – -1.0 – mV/°C
VN Output Noise Voltage f = 10Hz to 100kHz, TA = +25°C – 10.0 – µV/VO
RR Ripple Rejection(28) f = 120Hz, IO = 500mA, VI = 14V to 24V – 62.0 – dB
VDROP Dropout Voltage IO = 1A, TJ = +25°C – 2.0 – V
rO Output Resistance(28) f = 1kHz – 17.0 – mΩ
ISC Short Circuit Current VI = 35V, TA = +25°C – 250 – mA
IPK Peak Current(28) TJ = +25°C – 2.2 – A
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Electrical Characteristics (LM7812A) (Continued)Refer to the test circuits. 0°C < TJ < 125°C, IO = 1A, VI = 19V, CI = 0.33µF, CO = 0.1µF, unless otherwise specified.
Note:29. Load and line regulation are specified at constant junction temperature. Changes in VO due to heating effects must
be taken into account separately. Pulse testing with low duty is used.30. These parameters, although guaranteed, are not 100% tested in production.
Symbol Parameter Conditions Min. Typ. Max. Units
VO Output Voltage TJ = +25°C 11.75 12.0 12.25 V
IO = 5mA to 1A, PO ≤ 15W, VI = 14.8V to 27V
11.5 12.0 12.5
Regline Line Regulation(29) VI = 14.8V to 30V, IO = 500mA – 10.0 120 mV
VI = 16V to 22V – 4.0 120
TJ = +25°C VI = 14.5V to 27V – 10.0 120
VI = 16V to 22V – 3.0 60.0
Regload Load Regulation(29) TJ = +25°C, IO = 5mA to 1.5A – 12.0 100 mV
IO = 5mA to 1A – 12.0 100
IO = 250mA to 750mA – 5.0 50.0
IQ Quiescent Current TJ = +25°C – 5.1 6.0 mA
∆IQ Quiescent Current Change IO = 5mA to 1A – – 0.5 mA
VI = 14V to 27V, IO = 500mA – – 0.8
VI = 15V to 30V, TJ = +25°C – – 0.8
∆VO/∆T Output Voltage Drift(30) IO = 5mA – -1.0 – mV/°C
VN Output Noise Voltage f = 10Hz to 100kHz, TA = +25°C – 10.0 – µV/VO
RR Ripple Rejection(30) f = 120Hz, IO = 500mA, VI = 14V to 24V
– 60.0 – dB
VDROP Dropout Voltage IO = 1A, TJ = +25°C – 2.0 – V
rO Output Resistance(30) f = 1kHz – 18.0 – mΩ
ISC Short Circuit Current VI = 35V, TA = +25°C – 250 – mA
IPK Peak Current(30) TJ = +25°C – 2.2 – A
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Electrical Characteristics (LM7815A) (Continued)Refer to the test circuits. 0°C < TJ < 125°C, IO = 1A, VI = 23V, CI = 0.33µF, CO = 0.1µF, unless otherwise specified.
Notes:31. Load and line regulation are specified at constant junction temperature. Changes in VO due to heating effects must
be taken into account separately. Pulse testing with low duty is used.32. These parameters, although guaranteed, are not 100% tested in production.
Symbol Parameter Conditions Min. Typ. Max. Units
VO Output Voltage TJ = +25°C 14.75 15.0 15.3 V
IO = 5mA to 1A, PO ≤ 15W, VI = 17.7V to 30V
14.4 15.0 15.6
Regline Line Regulation(31) VI = 17.4V to 30V, IO = 500mA – 10.0 150 mV
VI = 20V to 26V – 5.0 150
TJ = +25°C VI = 17.5V to 30V – 11.0 150
VI = 20V to 26V – 3.0 75.0
Regload Load Regulation(31) TJ = +25°C, IO = 5mA to 1.5A – 12.0 100 mV
IO = 5mA to 1A – 12.0 100
IO = 250mA to 750mA – 5.0 50.0
IQ Quiescent Current TJ = +25°C – 5.2 6.0 mA
∆IQ Quiescent Current Change IO = 5mA to 1A – – 0.5 mA
VI = 17.5V to 30V, IO = 500mA – – 0.8
VI = 17.5V to 30V, TJ = +25°C – – 0.8
∆VO/∆T Output Voltage Drift(32) IO = 5mA – -1.0 – mV/°C
VN Output Noise Voltage f = 10Hz to 100kHz, TA = +25°C – 10.0 – µV/VO
RR Ripple Rejection(32) f = 120Hz, IO = 500mA, VI = 18.5V to 28.5V
– 58.0 – dB
VDROP Dropout Voltage IO = 1A, TJ = +25°C – 2.0 – V
rO Output Resistance(32) f = 1kHz – 19.0 – mΩ
ISC Short Circuit Current VI = 35V, TA = +25°C – 250 – mA
IPK Peak Current(32) TJ = +25°C – 2.2 – A
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Electrical Characteristics (LM7818A) (Continued)Refer to the test circuits. 0°C < TJ < 125°C, IO = 1A, VI = 27V, CI = 0.33µF, CO = 0.1µF, unless otherwise specified.
Notes:33. Load and line regulation are specified at constant junction temperature. Changes in VO due to heating effects must
be taken into account separately. Pulse testing with low duty is used.34. These parameters, although guaranteed, are not 100% tested in production.
Symbol Parameter Conditions Min. Typ. Max. Units
VO Output Voltage TJ = +25°C 17.64 18.0 18.36 V
IO = 5mA to 1A, PO ≤ 15W, VI = 21V to 33V
17.3 18.0 18.7
Regline Line Regulation(33) VI = 21V to 33V, IO = 500mA – 15.0 180 mV
VI = 21V to 33V – 5.0 180
TJ = +25°C VI = 20.6V to 33V – 15.0 180
VI = 24V to 30V – 5.0 90.0
Regload Load Regulation(33) TJ = +25°C, IO = 5mA to 1.5A – 15.0 100 mV
IO = 5mA to 1A – 15.0 100
IO = 250mA to 750mA – 7.0 50.0
IQ Quiescent Current TJ = +25°C – 5.2 6.0 mA
∆IQ Quiescent Current Change IO = 5mA to 1A – – 0.5 mA
VI = 12V to 33V, IO = 500mA – – 0.8
VI = 12V to 33V, TJ = +25°C – – 0.8
∆VO/∆T Output Voltage Drift(34) IO = 5mA – -1.0 – mV/°C
VN Output Noise Voltage f = 10Hz to 100kHz, TA = +25°C – 10.0 – µV/VO
RR Ripple Rejection(34) f = 120Hz, IO = 500mA, VI = 22V to 32V
– 57.0 – dB
VDROP Dropout Voltage IO = 1A, TJ = +25°C – 2.0 – V
rO Output Resistance(34) f = 1kHz – 19.0 – mΩ
ISC Short Circuit Current VI = 35V, TA = +25°C – 250 – mA
IPK Peak Current(34) TJ = +25°C – 2.2 – A
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Electrical Characteristics (LM7824A) (Continued)Refer to the test circuits. 0°C < TJ < 125°C, IO = 1A, VI = 33V, CI = 0.33µF, CO = 0.1µF, unless otherwise specified.
Notes:35. Load and line regulation are specified at constant junction temperature. Changes in VO due to heating effects must
be taken into account separately. Pulse testing with low duty is used.36. These parameters, although guaranteed, are not 100% tested in production.
Symbol Parameter Conditions Min. Typ. Max. Units
VO Output Voltage TJ = +25°C 23.5 24.0 24.5 V
IO = 5mA to 1A, PO ≤ 15W, VI = 27.3V to 38V
23.0 24.0 25.0
Regline Line Regulation(35) VI = 27V to 38V, IO = 500mA – 18.0 240 mV
VI = 21V to 33V – 6.0 240
TJ = +25°C VI = 26.7V to 38V – 18.0 240
VI = 30V to 36V – 6.0 120
Regload Load Regulation(35) TJ = +25°C, IO = 5mA to 1.5A – 15.0 100 mV
IO = 5mA to 1A – 15.0 100
IO = 250mA to 750mA – 7.0 50.0
IQ Quiescent Current TJ = +25°C – 5.2 6.0 mA
∆IQ Quiescent Current Change IO = 5mA to 1A – – 0.5 mA
VI = 27.3V to 38V, IO = 500mA – – 0.8
VI = 27.3V to 38V, TJ = +25°C – – 0.8
∆VO/∆T Output Voltage Drift(36) IO = 5mA – -1.5 – mV/°C
VN Output Noise Voltage f = 10Hz to 100kHz, TA = +25°C – 10.0 – µV/VO
RR Ripple Rejection(36) f = 120Hz, IO = 500mA, VI = 28V to 38V
– 54.0 – dB
VDROP Dropout Voltage IO = 1A, TJ = +25°C – 2.0 – V
rO Output Resistance(36) f = 1kHz – 20.0 – mΩ
ISC Short Circuit Current VI = 35V, TA = +25°C – 250 – mA
IPK Peak Current(36) TJ = +25°C – 2.2 – A
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Typical Performance Characteristics
Figure 3. Quiescent Current Figure 4. Peak Output Current
Figure 5. Output Voltage Figure 6. Quiescent Current
6
5.75
5.5
5.25
5
4.75
4.5
VI = 10VVO = 5VIO = 5mA
-25-50 0 025 50 75 100 125
QU
IES
CE
NT
CU
RR
EN
T (m
A)
JUNCTION TEMPERATURE (°C)
3
2.5
2
1.5
1
.5
0
TJ = 25°C∆VO = 100mV
5 10 15 20 25 30 35
OU
TP
UT
CU
RR
EN
T (A
)
INPUT-OUTPUT DIFFERENTIAL (V)
1.02
1.01
1
0.99
0.98
VI – VO = 5VIO = 5mA
-25-50 0 25 50 75 100 125
NO
RM
ALI
ZE
D O
UT
PU
T V
OLT
AG
E (V
)
JUNCTION TEMPERATURE (°C)
7
6.5
6
5.5
5
4.5
4
TJ = 25°CVO = 5VIO = 10mA
105 15 20 25 30 35
QU
IES
CE
NT
CU
RR
EN
T (m
A)
INPUT VOLTAGE (V)
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Typical Applications
Figure 7. DC Parameters
Figure 8. Load Regulation
Figure 9. Ripple Rejection
0.1µFCOCI0.33µF
OutputInputLM78XX
1 3
2
LM78XX3
2
1
0.33µF
270pF
100Ω 30µS
RL
2N6121or EQ
OutputInput
VO0V
VO
LM78XXOutputInput
5.1Ω
0.33µF2
31
RL
470µF
120Hz +
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Figure 10. Fixed Output Regulator
Figure 11.
Figure 12. Circuit for Increasing Output Voltage
0.1µFCOCI0.33µF
OutputInputLM78XX
1 3
2
0.1µFCOCI0.33µF
OutputInput
LM78XX1 3
2 VXXR1
RL
IQ
IO
IO = R1 + IQVXX
Notes:1. To specify an output voltage, substitute voltage value for “XX.” A common ground is required between the input and the
output voltage. The input voltage must remain typically 2.0V above the output voltage even during the low point on the input ripple voltage.
2. CI is required if regulator is located an appreciable distance from power supply filter.3. CO improves stability and transient response.
0.1µFCOCI0.33µF
Output
InputLM78XX
1 3
2 VXXR1
R2
IQ
IRI ≥ 5 IQVO = VXX(1 + R2 / R1) + IQR2
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Figure 13. Adjustable Output Regulator (7V to 30V)
Figure 14. High Current Voltage Regulator
Figure 15. High Output Current with Short Circuit Protection
LM741
-
+
2
36
4
2
31
0.33µFCI
Input Output
0.1µF
CO
LM7805
10kΩ
IRI ≥ 5 IQVO = VXX(1 + R2 / R1) + IQR2
3
2
1LM78XX
Output
Input
R1
3Ω
0.33µF
IREG
0.1µF
IO
IQ1
IO = IREG + BQ1 (IREG–VBEQ1/R1)
Q1 BD536
R1 = VBEQ1
IREG–IQ1 BQ1
LM78XXOutput
0.1µF0.33µF
R1
3Ω
3
2
1
Q1Input
Q2
Q1 = TIP42Q2 = TIP42
RSC = I SC
VBEQ2
RSC
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Figure 16. Tracking Voltage Regulator
Figure 17. Split Power Supply (±15V – 1A)
LM78XX
LM741
0.1µF0.33µF
1
2
3
7 2
6
4 3 4.7kΩ
4.7kΩ
TIP42
COMMONCOMMON
VO
-VO
VI
-VIN
_
+
31
2
1
32
0.33µF 0.1µF
2.2µF1µF +
+
1N4001
1N4001
+15V
-15V
+20V
-20V
LM7815
MC7915
26 www.fairchildsemi.comLM78XX/LM78XXA Rev. 1.0.1
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Po
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e Reg
ulato
r
Figure 18. Negative Output Voltage Circuit
Figure 19. Switching Regulator
LM78XX
Output
Input
+
1
2
0.1µF
3
LM78XX
1mH
31
2
2000µF
OutputInput D45H11
0.33µF
470Ω4.7Ω
10µF
0.5Ω
Z1
+
+
27 www.fairchildsemi.comLM78XX/LM78XXA Rev. 1.0.1
LM
78XX
/LM
78XX
A 3-Term
inal 1A
Po
sitive Voltag
e Reg
ulato
r
Mechanical DimensionsDimensions in millimeters
4.50 ±0.209.90 ±0.20
1.52 ±0.10
0.80 ±0.102.40 ±0.20
10.00 ±0.20
1.27 ±0.10
ø3.60 ±0.10
(8.70)
2.80
±0.
1015
.90
±0.2
0
10.0
8 ±0
.30
18.9
5MA
X.
(1.7
0)
(3.7
0)(3
.00)
(1.4
6)
(1.0
0)
(45°)
9.20
±0.
2013
.08
±0.2
0
1.30
±0.
10
1.30+0.10–0.05
0.50+0.10–0.05
2.54TYP[2.54 ±0.20]
2.54TYP[2.54 ±0.20]
TO-220
28 www.fairchildsemi.comLM78XX/LM78XXA Rev. 1.0.1
LM
78XX
/LM
78XX
A 3-Term
inal 1A
Po
sitive Voltag
e Reg
ulato
r
Rev. I19
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is notintended to be an exhaustive list of all such trademarks.
DISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANYPRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANYLIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESESPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILDíS WORLDWIDE TERMS AND CONDITIONS,SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICYFAIRCHILDíS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORTDEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTORCORPORATION.
As used herein:1. Life support devices or systems are devices or systemswhich, (a) are intended for surgical implant into the body,or (b) support or sustain life, or (c) whose failure to performwhen properly used in accordance with instructions for useprovided in the labeling, can be reasonably expected toresult in significant injury to the user.
2. A critical component is any component of a life supportdevice or system whose failure to perform can bereasonably expected to cause the failure of the life supportdevice or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONSDefinition of Terms
ACEx™ActiveArray™Bottomless™Build it Now™CoolFET™CROSSVOLT™DOME™EcoSPARK™E2CMOS™EnSigna™FACT™
FAST®
FASTr™FPS™FRFET™GlobalOptoisolator™GTO™HiSeC™I2C™i-Lo™ImpliedDisconnect™IntelliMAX™
ISOPLANAR™LittleFET™MICROCOUPLER™MicroFET™MicroPak™MICROWIRE™MSX™MSXPro™OCX™OCXPro™OPTOLOGIC®
OPTOPLANAR™PACMAN™POP™Power247™
PowerEdge™PowerSaver™PowerTrench®
QFET®
QS™QT Optoelectronics™Quiet Series™RapidConfigure™RapidConnect™µSerDes™ScalarPump™SILENT SWITCHER®
SMART START™SPM™Stealth™
SuperFET™SuperSOT™-3SuperSOT™-6SuperSOT™-8SyncFET™TCM™TinyLogic®
TINYOPTO™TruTranslation™UHC™UniFET™UltraFET®
VCX™Wire™
FACT Quiet Series™Across the board. Around the world.™The Power Franchise®
Programmable Active Droop™
Datasheet Identification Product Status Definition
Advance Information Formative or In Design
This datasheet contains the design specifications forproduct development. Specifications may change inany manner without notice.
Preliminary First Production This datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to makechanges at any time without notice in order to improvedesign.
No Identification Needed Full Production This datasheet contains final specifications. FairchildSemiconductor reserves the right to make changes atany time without notice in order to improve design.
Obsolete Not In Production This datasheet contains specifications on a productthat has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.
Product Datasheet P1110B – 915 MHz RF Powerharvester Receiver
Rev A –2016/11 © 2016 Powercast Corporation, All rights reserved. www.powercastco.com
+1 412-455-5800 P a g e | 1
DESCRIPTION The Powercast P1110B Powerharvester receiver is an RF energy harvesting device that converts RF to DC. Housed in a compact SMD package, the P1110B receiver provides RF energy harvesting and power management for battery and capacitor recharging. The P1110B converts RF energy to DC and provides the energy to the attached storage element. When an adjustable voltage threshold on the storage element is achieved, the P1110B automatically disables charging. A microprocessor can be used to obtain data from the component for improving overall system operation.
FEATURES High conversion efficiency, >70% Low power consumption Configurable voltage output to support
Li-ion and Alkaline battery recharging Operation from 0V to support capacitor
charging Received signal strength indicator No external RF components required -
Internally matched to 50 ohms Wide operating range Operation down to -5 dBm input power Industrial temperature range RoHS Compliant
APPLICATIONS Wireless sensors
- Industrial Monitoring - Smart Grid - Structural Health Monitoring - Defense - Building automation - Agriculture - Oil & Gas - Location-aware services
Wireless trigger Low power electronics
FUNCTIONAL BLOCK DIAGRAM
PIN CONFIGURATION TOP VIEW
Powerharvester and Powercast are registered trademarks of Powercast Corporation. All other trademarks are the property of their respective owners.
GN
D
GN
D
GN
D
DO
UT
DS
ET
Product Datasheet P1110B – 915 MHz RF Powerharvester Receiver
Rev A –2016/11 © 2016 Powercast Corporation, All rights reserved. www.powercastco.com
+1 412-455-5800 P a g e | 2
ABSOLUTE MAXIMUM RATINGS TA = 25°C, unless otherwise noted.
ESD CAUTION This is an ESD (electrostatic discharge) sensitive device. Proper ESD precautions should be taken to avoid degradation or damage to the component.
PIN FUNCTIONAL DESCRIPTION
Pin Label Function 1 LI Li-ion/LiPo recharging pin. Connect directly to the analog ground plane for 4.2V
maximum recharging. NC when using ALK or VSET pin. 2 GND RF Ground. Connect to analog ground plane. 3 RFIN RF Input. Connect to 50Ω antenna through a 50Ω transmission line. Add a DC block
if antenna is a DC short. 4 GND RF Ground. Connect to analog ground plane. 5 DSET Digital Input. Set to enable measurement of harvested power. If this function is not
desired leave NC. 6 VSET Maximum Output Voltage Adjustment. Sets the maximum output voltage on the
VOUT pin. Connect to an external resistor. NC when using LI or ALK pin. 7 GND DC Ground. Connect to analog ground plane. 8 VOUT DC Output. Connect to external storage device. Maximum output voltage set by
VSET, LI, or ALK pin. 9 DOUT Analog Output. Provides an analog voltage level corresponding to the harvested
power. 10 ALK Alkaline recharging pin. Connect directly to the analog ground plane for 3.3V
maximum recharging. NC when using LI or VSET pin.
Exceeding the absolute maximum ratings may cause permanent damage to the device.
Parameter Rating Unit
RF Input Power 23 dBm
RFIN to GND 0 V
DSET to GND 6 V
VOUT to GND 4.3 V
VOUT Current 100 mA
Operating Temperature Range -40 to 85 °C
Storage Temperature Range -40 to 85 °C
Product Datasheet P1110B – 915 MHz RF Powerharvester Receiver
Rev A –2016/11 © 2016 Powercast Corporation, All rights reserved. www.powercastco.com
+1 412-455-5800 P a g e | 3
SPECIFICATIONS
TA = 25°C, VOUT = 3.0V, unless otherwise noted.
Parameter Symbol Condition Min Typ Max Unit RF Characteristics
Input Power Frequency
RFIN
0
902
20
928
dBm MHz
DC Characteristics VOUT
No RFIN
0
-1.5
4.2
V Output Voltage
Output Current IOUT 50 mA Output Current IOUT A VSET Range VSET 1.8 4.2 V Signal Strength DOUT RFIN = 0dBm 61 mV
Digital Characteristics DSET Input High
1
V
Timing Characteristics DSET Delay
20
s
Product Datasheet P1110B – 915 MHz RF Powerharvester Receiver
Rev A –2016/11 © 2016 Powercast Corporation, All rights reserved. www.powercastco.com
+1 412-455-5800 P a g e | 4
FUNCTIONAL DESCRIPTION
RF INPUT (RFIN) The RF input is an unbalanced input from the antenna. Any standard or custom 50 antenna may be used with the receiver. The P1110B has been optimized for operation in the 902-928MHz band but will operate outside this band with reduced efficiency. Contact Powercast for custom frequency requirements.
The RF input must be isolated from ground. For antennas that are a DC short, a high-Q DC blocking capacitor should be added in series with the antenna.
STORAGE SELECTION (VOUT) The P1110B is designed to charge an external storage element including batteries and capacitors. The output voltage from the P1110B will be set by the voltage of the storage element with a maximum set by the VSET, LI, or ALK pin. The P1110B will produce a charging current that will be dependent on the RF input power. The voltage on this pin can vary from 0V to 4.2V. The charging current for a fixed input RF power will decrease as the voltage on the VOUT pin increase due to the fixed amount of power available.
The P1110B monitors the voltage on the storage element and turns off VOUT when the element is fully charged. The P1110B does not monitor the charging current because it is typically much less than the maximum charge current of the storage element.
When selecting a storage element, the leakage current must be strongly considered. Certain battery chemistries have higher leakage currents than others. It is recommended that the leakage current of the storage element be less than 1% per month. Higher leakage currents will result in using more of the harvested energy to replace the capacity lost due to leakage rather than replenishing the capacity.
When no load is attached to the P1110B, a minimum of 10uF is required on the VOUT pin.
RSSI OPERATION (DOUT, DSET) The RSSI functionality allows the sampling of the received signal to provide an indication of the amount of energy being harvested. When DSET is driven high the harvested DC power will be directed to an internal sense resistor, and the corresponding voltage will be provided to the DOUT pin. The voltage on the DOUT pin can be read after a 20μs settling time.
When the RSSI functionality is being used, the harvested DC power is not being stored.
If the RSSI functionality is not used, the DOUT
and DSET pins should be left as no connects. The DSET pin has an internal pull down.
SETTING THE OUTPUT VOLTAGE (VOUT) The maximum voltage from the P1110B is set using the VSET, LI, or ALK pin. The LI pin can be directly connected to ground to set the maximum voltage to 4.2V, or the ALK
Product Datasheet P1110B – 915 MHz RF Powerharvester Receiver
Rev A –2016/11 © 2016 Powercast Corporation, All rights reserved. www.powercastco.com
+1 412-455-5800 P a g e | 5
pin can be directly connected to ground to set the maximum voltage to 3.3V. For custom voltage settings, the VSET pin can be used. Placing a resistor from VSET to ground will adjust the maximum output voltage. The resistor can be calculated using the following equation.
R 12.35M
VOUT MAX 1.235
The DOUT pin can contain low-level analog voltage signals. If a long trace is connected to this pin, additional filtering capacitance next to the A/D converter may be required. Additional capacitance on this pin will increase the DSET delay time.
LAYOUT CONSIDERATIONS When setting the output voltage, the resistor connected to the VSET pin should be as close as possible to the pin. No external capacitance should be added to this pin.
The RFIN feed line should be designed as a 50Ω trace and should be as short as possible to minimize feed line losses. The following table provides recommended dimensions for 50Ω feed lines (CPWG) for different circuit board configurations.
PCB Side View
Material Thickness (H)
Trace Width (S)
Spacing (W)
FR4 (εr = 4.2)
62 50 9
FR4 (εr = 4.2)
31 50 20
*All dimensions are in mils.
The GND pins on each side of the RFIN pin should be connected to the PCB ground plane through a via located next to the pads under the receiver.
Product Datasheet P1110B – 915 MHz RF Powerharvester Receiver
Rev A –2016/11 © 2016 Powercast Corporation, All rights reserved. www.powercastco.com
+1 412-455-5800 P a g e | 6
TYPICAL PERFORMANCE GRAPHS TA = 25°C, unless otherwise noted.
Powerharvester Efficiency vs. RFIN (dBm)
Powerharvester Efficiency vs. Frequency
Powerharvester Efficiency vs. RFIN (mW)
Powerharvester Efficiency vs. Frequency
Product Datasheet P1110B – 915 MHz RF Powerharvester Receiver
Rev A –2016/11 © 2016 Powercast Corporation, All rights reserved www.powercastco.com
+1 412-455-5800 P a g e | 7
TYPICAL PERFORMANCE GRAPHS TA = 25°C, unless otherwise noted.
Received Signal Strength Indicator vs. RFIN (dBm)
Charge Current vs. RFIN (dBm)
Received Signal Strength Indicator vs. RFIN (mW)
Charge Current vs. RFIN (mW)
Product Datasheet P1110B – 915 MHz RF Powerharvester Receiver
Rev A –2016/11 © 2016 Powercast Corporation, All rights reserved www.powercastco.com
+1 412-455-5800 P a g e | 8
TYPICAL APPLICATION CIRCUIT
Power Receiving Antenna
VOUT
RFIN
P1110B
DSET
DOUT GND ALK
Microprocessor
Radio module
Sensors
Communication Antenna
Product Datasheet P1110B – 915 MHz RF Powerharvester Receiver
Rev A –2016/11 © 2016Powercast Corporation. All rights reserved. www.powercastco.com
+1 412-455-5800 P a g e | 9
MECHANICAL SPECIFICATIONS
B
B
Product Datasheet P1110B – 915 MHz RF Powerharvester Receiver
Rev A –2016/11 © 2016 Powercast Corporation. All rights reserved. www.powercastco.com
+1 412-455-5800 P a g e | 10
IMPORTANT NOTICE
Information furnished by Powercast Corporation (Powercast) is believed to be accurate and reliable. However, no responsibility is assumed by Powercast for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications are subject to change without notice.
No license is granted by implication or otherwise under any patent or patent rights of Powercast. Trademarks and registered trademarks are the property of their respective owners.
POWERCAST PRODUCTS (INCLUDING HARDWARE AND/OR SOFTWARE) ARE NOT DESIGNED OR INTENDED TO BE FAIL-SAFE, FAULT TOLERANT OR FOR USE IN ANY APPLICATION THAT COULD LEAD TO DEATH, PERSONAL INJURY OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE (INDIVIDUALLY AND COLLECTIVELY, “CRITICAL APPLICATIONS”), SUCH AS LIFE-SUPPORT OR SAFETY DEVICES OR SYSTEMS, CLASS III MEDICAL DEVICES, NUCLEAR FACILITIES, APPLICATIONS THAT AFFECT CONTROL OF A VEHICLE OR AIRCRAFT, APPLICATIONS RELATED TO THE DEPLOYMENT OF AIRBAGS, OR ANY OTHER CRITICAL APPLICATIONS. CUSTOMER AGREES, PRIOR TO USING OR DISTRIBUTING ANY SYSTEMS THAT INCORPORATE POWERCAST PRODUCTS, TO THOROUGHLY TEST THE SAME FOR SAFETY PURPOSES. CUSTOMER ASSUMES THE SOLE RISK AND LIABILITY OF ANY USE OF POWERCAST PRODUCTS IN CRITICAL APPLICATIONS, SUBJECT ONLY TO APPLICABLE LAWS AND REGULATIONS GOVERNING LIMITATIONS ON PRODUCT LIABILITY.
Powercast warrants its products in accordance with Powercast’s standard warranty available at www.powercastco.com.
P1110-EVB
Evaluation Board for P1110 Powerharvester®
Receiver Description: The P1110-EVB contains an evaluation board and antennas to test and develop with the P1110 Powerharvester Receiver. The P1110 converts RF energy (radio waves) into DC power which can be stored in a battery or capacitor, or used to directly power a circuit.
Items included: 1 – Evaluation Board for P1110 Powerharvester Receiver (see description on next page) 1 – 915 MHz PCB dipole antenna (see description below) 1 – 915 MHz PCB patch antenna (see description below)
Note – this kit needs to receive power from an RF source such as a transmitter or test equipment.
Instructions: 1. Download the P1110 product datasheet from www.powercastco.com/documentation to learn about the specific I/O and functions of the P1110.
2. Connect one of the antennas to the SMA connector (J1) on the evaluation board, or connect J1 directly to RF test equipment. See datasheet for maximum input power.
3. Adjust switches S1, S2, S3, and S4 to desired settings. See descriptions on next page.
4. Place evaluation board on flat surface and connect test meters as desired.
5. Turn on the source of RF energy (e.g. Powercast transmitter, test equipment, other transmitter)
Support: Website: http://www.powercastco.com/documentation/ Email: [email protected] Phone: +1 412-455-5800 (Eastern Time Zone – USA)
Item Descriptions 915 MHz PCB Dipole Antenna This antenna is flat and has the RF connector located at the bottom of the
antenna. Type: omni-directional, vertically polarized Energy pattern: 360° Antenna gain: Linear gain = 1.25 (1.0 dBi)
915 MHz PCB Patch Antenna This antenna has two layers and the RF connector located on the back of the antenna. The front side should be pointed toward the transmitter with the same polarization
Type: directional, vertically polarized Energy pattern: 122° (azimuth/horizontal), 68° (elevation/vertical) Antenna gain: Linear gain = 4.1 (6.1 dBi)
P1110-EVB, Rev C 2015/06 © 2015 Powercast Corporation Page 1
Evaluation Board
Component Description
S1 Switch for max. output voltage – 4.2V, 3.3V, ADJ (custom using R5 + R6 – see datasheet)
S2 Switch for output power
LED (power sent to illuminate LED D1)
MEAS (use with test points VOUT to LED or VOUT to STORE and in-line current meter)
VCC (power sent to test area and S4)
S3 Switch for DSET selection. When enabled, RSSI is available through DOUT. VOUT (Enabled by on-board voltage source (>1V) from C6 or BT1 through switch S4)
EXT (Enabled by external source through DSET EXT test point)
OFF (Normal charging operation)
S4 Switch for charging on-board capacitor C6, or external battery through BT1
C1 Optional output filtering for VOUT – 10 uF recommended (see datasheet)
C2,C3,C4,C5 Not used
C6 50mF supercapacitor – storage for Powerharvester output
JP1 Not used
D1 LED for visual indication of power output
R1 Resistor for LED (D1)
R2 Not used
R4 Not used
R5 Resistor for max output voltage adjustment (see datasheet for R5+R6 selection)
R6 Resistor for max output voltage adjustment (see datasheet for R5+R6 selection)
BT1 External battery connection
J1 SMA connector for antenna or RF input (add DC block for DC short antenna)
J2 Connector for add-on boards
Connector on board: FCI – P/N: 52601-G10-8LF
Mating connector: Sullins – P/N: SFH11-PBPC-D05-ST-BK
U2 P1110 Powerharvester receiver (see datasheet for pin descriptions)
P1110-EVB, Rev C 2015/06 © 2015 Powercast Corporation Page 2
P1110-EVB Electrical Schematic
P1110-EVB, Rev C 2015/06 © 2015 Powercast Corporation Page 3