JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOT-323 Plastic-Encapsulate Transistors SS8550 TRANSISTOR (PNP) FEATURES High Collector Current Complementary to SS8050

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol Parameter Value Unit

VCBO Collector-Base Voltage -40 V

VCEO Collector-Emitter Voltage -25 V

VEBO Emitter-Base Voltage -5 V

IC Collector Current -1.5 A

PC Collector Power Dissipation 200 mW

RΘJA Thermal Resistance From Junction To Ambient 625 ℃/W

Tj Junction Temperature 150 ℃

Tstg Storage Temperature -55～+150 ℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-100µA, IE=0 -40 V

Collector-emitter breakdown voltage V(BR)CEO IC=-0.1mA, IB=0 -25 V

Emitter-base breakdown voltage V(BR)EBO IE=-100µA, IC=0 -5 V

Collector cut-off current ICBO VCB=-40V, IE=0 -100 nA

Collector cut-off current ICEO VCE=-20V, IB=0 -100 nA

Emitter cut-off current IEBO VEB=-5V, IC=0 -100 nA

hFE(1) VCE=-1V, IC=-100mA 120 400 DC current gain

hFE(2) VCE=-1V, IC=-800mA 40

Collector-emitter saturation voltage VCE(sat) IC=-800mA, IB=-80mA -0.5 V

Base-emitter saturation voltage VBE(sat) IC=-800mA, IB=-80mA -1.2 V

Base-emitter voltage VBE VCE=-1V, IC=-10mA -1 V

Transition frequency fT VCE=-10V,IC=-50mA , f=30MHz 100 MHz

Collector output capacitance Cob VCB=-10V, IE=0, f=1MHz 20 pF CLASSIFICATION OF hFE(1)

RANK L H J

RANGE 120–200 200–350 300–400

MARKING Y2

SOT–323

1. BASE

2. EMITTER

3. COLLECTOR

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-1 -10 -100 -1000-1

-10

-100

-1000

-1 -10 -100 -1000-100

-1000

-0.0 -0.5 -1.0 -1.5 -2.0-0.00

-0.05

-0.10

-0.15

-0.20

-0.25

-0.30

-0.35

-0.40

-200 -400 -600 -800 -1000 -1200-1

-10

-100

-1000

-1 -10 -100 -100010

100

1000

-0.1 -1 -101

10

100

-1 -10 -10010

100

1000

0 25 50 75 100 125 1500

50

100

150

200

250

-1500

Ta=100℃

Ta=25℃

β=10

IC

VCEsat

——

CO

LLE

CTO

R-E

MIT

TER

SA

TUR

ATI

ON

VOLT

AGE

V C

Esa

t (m

V)

COLLECTOR CURRENT IC (mA)

-300

IC

VBEsat

——

Ta=25℃

Ta=100℃

BASE

-EM

ITTE

R S

ATU

RAT

ION

VOLT

AGE

V B

Esa

t (m

V)

-1500

β=10

COLLECTOR CURRENT IC (mA)

-2000

COMMONEMITTERTa=25℃

CO

LLE

CTO

R C

UR

RE

NT

I C

(A

)

COLLECTOR-EMITTER VOLTAGE VCE (V)

Static Characteristic

-2mA-1.8mA

-1.6mA

-1.4mA

-1.2mA

-1mA

-800uA

-600uA

-400uA

IB=-200uA

IC

VBE

——

Ta=100℃

Ta=25℃

VCE=-1V

CO

LLC

ETO

R C

UR

RE

NT

I C

(m

A)

BASE-EMMITER VOLTAGE VBE (mV)

-1500

DC

CU

RR

EN

T G

AIN

h

FE

COLLECTOR CURRENT IC (mA)

Ta=100℃

Ta=25℃

VCE=-1V

IC

hFE

——

-1500

Cob

Cib

VCB

/ VEB

Cob

/ Cib ——

REVERSE VOLTAGE V (V)

CAP

ACIT

ANC

E

C

(pF)

f=1MHzIE=0/IC=0Ta=25℃

-20

IC

fT ——

VCE=-10VTa=25℃

TRA

NS

ITIO

N F

RE

QU

EN

CY

fT

(M

Hz)

COLLECTOR CURRENT IC (mA)

CO

LLEC

TOR

PO

WER

DIS

SIPA

TIO

N

P

C

(mW

)

AMBIENT TEMPERATURE Ta ( )℃

PC —— T

a

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Typical Characteristics

Min Max Min MaxA 0.900 1.100 0.035 0.043

A1 0.000 0.100 0.000 0.004A2 0.900 1.000 0.035 0.039b 0.200 0.400 0.008 0.016c 0.080 0.150 0.003 0.006D 2.000 2.200 0.079 0.087E 1.150 1.350 0.045 0.053

E1 2.150 2.450 0.085 0.096e

e1 1.200 1.400 0.047 0.055L

L1 0.260 0.460 0.010 0.018θ 0° 8° 0° 8°

0.525 REF 0.021 REF

SymbolDimensions In Millimeters Dimensions In Inches

0.650 TYP 0.026 TYP

SOT-323 Package Outline Dimensions

SOT-323 Suggested Pad Layout

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SOT-323 Tape and Reel

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