spice model of 2sa1037akt146r in spice park

All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

1

COMPONENTS: TRANSISTOR

PART NUMBER: 2SA1037AKT146R

MANUFACTURER: ROHM

Device Modeling Report

Bee Technologies Inc.


2

TRANSISTOR MODEL

PSpice model parameter

Model description

IS Saturation Current

BF Ideal Maximum Forward Beta

NF Forward Current Emission Coefficient

VAF Forward Early Voltage

IKF Forward Beta Roll-off Knee Current

ISE Non-ideal Base-Emitter Diode Saturation Current

NE Non-ideal Base-Emitter Diode Emission Coefficient

BR Ideal Maximum Reverse Beta

NR Reverse Emission Coefficient

VAR Reverse Early Voltage

IKR Reverse Beta Roll-off Knee Current

ISC Non-ideal Base-Collector Diode Saturation Current

NC Non-ideal Base-Collector Diode Emission Coefficient

NK Forward Beta Roll-off Slope Exponent

RE Emitter Resistance

RB Base Resistance

RC Series Collector Resistance

CJE Zero-bias Emitter-Base Junction Capacitance

VJE Emitter-Base Junction Potential

MJE Emitter-Base Junction Grading Coefficient

CJC Zero-bias Collector-Base Junction Capacitance

VJC Collector-base Junction Potential

MJC Collector-base Junction Grading Coefficient

FC Coefficient for Onset of Forward-bias Depletion Capacitance

TF Forward Transit Time

XTF Coefficient for TF Dependency on Vce

VTF Voltage for TF Dependency on Vce

ITF Current for TF Dependency on Ic

PTF Excess Phase at f=1/2pi*TF

TR Reverse Transit Time

EG Activation Energy

XTB Forward Beta Temperature Coefficient

XTI Temperature Coefficient for IS


3

Ic

Vce

VAR

(X1,Y1)

(X2,Y2)

Y=aX+b

Reverse Early Voltage Characteristic

Reverse


4

Reverse DC Beta Characteristic (Ie vs. hFE)

Measurement

Simulation

Emitter Current


5

Ic

VceVAF

(X1,Y1)

(X2,Y2)

Y=aX+b

Forward Early Voltage Characteristic

Forward


6

C-B Capacitance Characteristics E-B Capacitance Characteristics

Measurement

Simulation

Measurement

Simulation


7

V1

-6V

0

I1

0Adc

Q1Q2SA1037AKT146R

IC(Q1)

-1.0mA-200uA -100mA

IC(Q1)/ IB(Q1)

10

100

1.0K

Transistor hFE-IC Characteristics

Circuit Simulation Result

Evaluation Circuit


8

10

100

1000

1.0 10.0 100.0

DC

CU

RR

EN

T G

AIN

: h

FE

COLLECTOR CURRENT : Ic ( -mA )

Measurement

Simulation

Comparison Graph

Ic(mA) hFE

Error(%) Measurement Simulation

-0.200 288.000 287.083 -0.318

-0.500 294.000 293.905 -0.032

-1.000 295.000 295.117 0.040

-2.000 295.000 295.330 0.112

-5.000 294.000 293.563 -0.149

-10.000 290.000 289.581 -0.144

-20.000 283.000 281.114 -0.666

-50.000 257.000 254.769 -0.868

-100.000 210.000 207.905 -0.998


Simulation Result


9

VC

I1

0Adc

0

F1

F10

Q1Q2SA1037AKT146R

IC(Q1)

-1.0mA-200uA -100mA

V(Q1:c)

-100mV

-30mV

-1.0V

VCE(Sat)-IC Characteristics


Evaluation Circuit


10

0.01

0.1

1

0.1 1.0 10.0 100.0

CO

LL

EC

TO

R S

AT

UR

AT

ION

V

OL

TA

GE

: V

CE

(sat)

(-V

)

COLLECTOR CURRENT : Ic ( -mA )

Measurement

Simulation

Comparison Graph

IC(mA) VCE(sat)(V)


-0.200 -0.0710 -0.0697 -1.8310

-0.500 -0.0650 -0.0638 -1.8462

-1.000 -0.0620 -0.0612 -1.2903

-2.000 -0.0610 -0.0620 1.6393

-5.000 -0.0626 -0.0625 -0.1597

-10.000 -0.0680 -0.0687 1.0294

-20.000 -0.0825 -0.0824 -0.1212

-50.000 -0.1270 -0.1258 -0.9449

-100.000 -0.1990 -0.2001 0.5528


Simulation Result


11

VC

I1

0Adc

0

F1

F

10

Q1Q2SA1037AKT146R

IC(Q1)

-100uA -100mA

V(Q1:b)

-10mV

-10V

VBE(Sat)-IC Characteristics


Evaluation Circuit


12

0.01

0.1

1

10

0.1 1.0 10.0 100.0

BA

SE

-EM

ITT

ER

SA

TU

RA

TIO

N V

OL

TA

GE

: V

BE

(sat)

(-

V)

IC ( -mA )

Measurement

Simulation

Comparison Graph

IC(mA) VBE(sat)(V)


-0.100 -0.577 -0.581 0.693

-0.200 -0.596 -0.599 0.503

-0.500 -0.620 -0.624 0.645

-1.000 -0.639 -0.643 0.626

-2.000 -0.662 -0.663 0.151

-5.000 -0.698 -0.692 -0.860

-10.000 -0.725 -0.715 -1.379

-20.000 -0.765 -0.746 -2.484

-50.000 -0.820 -0.809 -1.341

-100.000 -0.875 -0.894 2.171


Simulation Result


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V1

TD = 1u

TF = 10nsPW = 20usPER = 50us

V1 = -5.55

TR = 10ns

V2 = 5.05

R2

500

R3

380

RL

200

0

VCC

-30

D1

D1N5817D2

D1N5817

L2

50nH

1 2

L1

30nH

1 2 Q1Q2SA1037AKT146R

R1

50

Time

0s 0.5us 1.0us 1.5us 2.0us

1 V(R1:2) 2 V(Q1:C)

-8.0V

-6.0V

-4.0V

-2.0V

0V

2.0V

4.0V

6.0V

8.0V1

-40V

-20V

0V

20V

40V2

>>

Switching Characteristics Circuit simulation result

Evaluation circuit

Simulation result

Measurement Simulation %Error

tf (ns) 25.000 24.395 -2.420

tstg (ns) 210.000 210.919 0.438


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Switching Characteristics Reference


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0

+-

H1

H

0

I1

0Adc

1Aac+

-

G1

G

GAIN = 1e6

0IC

0 0

Vce

-12Vdc

0

F1

F 0

0

Ic

1m

Q2Q2SA1037AKT146R

Q1Q2SA1037AKT146R

V_Ic

-1.0m-500u -100m

ZeroCross(DB(IC(Q2)))

100M

1.0G

40M

Ft - IC Characteristics

-IC(mA) FT(MHz)


10.000 310.000 303.881 -1.974


Evaluation Circuit

Simulation Result


16

V1

-5Vdc

I1

0Adc

0

Q1Q2SA1037AKT146R

V_V1

0V -1.0V -2.0V -3.0V -4.0V -5.0V

IC(Q1)

0A

-20mA

-40mA

-60mA

-80mA

-100mA

Output Characteristics


Evaluation Circuit

IB=-0

-50uA

-100uA

-150uA

-200uA

-250uA

-350uA

-400uA

-450uA -500uA

-300uA


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Output Characteristics Reference

spice model of 2sa1037akt146r in spice park

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