All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

COMPONENTS: TRANSISTOR

PART NUMBER: 2SA2121

MANUFACTURER: TOSHIBA

Device Modeling Report

Bee Technologies Inc.

All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

TRANSISTOR MODEL

PSpice model

parameter Model description

IS Saturation Current

BF Ideal Maximum Forward Beta

NF Forward Current Emission Coefficient

VAF Forward Early Voltage

IKF Forward Beta Roll-off Knee Current

ISE Non-ideal Base-Emitter Diode Saturation Current

NE Non-ideal Base-Emitter Diode Emission Coefficient

BR Ideal Maximum Reverse Beta

NR Reverse Emission Coefficient

VAR Reverse Early Voltage

IKR Reverse Beta Roll-off Knee Current

ISC Non-ideal Base-Collector Diode Saturation Current

NC Non-ideal Base-Collector Diode Emission Coefficient

NK Forward Beta Roll-off Slope Exponent

RE Emitter Resistance

RB Base Resistance

RC Series Collector Resistance

CJE Zero-bias Emitter-Base Junction Capacitance

VJE Emitter-Base Junction Potential

MJE Emitter-Base Junction Grading Coefficient

CJC Zero-bias Collector-Base Junction Capacitance

VJC Collector-base Junction Potential

MJC Collector-base Junction Grading Coefficient

FC Coefficient for Onset of Forward-bias Depletion Capacitance

TF Forward Transit Time

XTF Coefficient for TF Dependency on Vce

VTF Voltage for TF Dependency on Vce

ITF Current for TF Dependency on Ic

PTF Excess Phase at f=1/2pi*TF

TR Reverse Transit Time

EG Activation Energy

XTB Forward Beta Temperature Coefficient

XTI Temperature Coefficient for IS

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Reverse Early Voltage Characteristic

Reverse

Ic

VceVAF

(X1,Y1)

(X2,Y2)

Y=aX+b

VAR

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Reverse DC Beta Characteristic (Ie vs. hFE)

Measurement

Simulation

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Ic

VceVAF

(X1,Y1)

(X2,Y2)

Y=aX+b

Forward Early Voltage Characteristic

Forward

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C-B Capacitance Characteristics E-B Capacitance Characteristics

Measurement

Simulation

Measurement

Simulation

Measurement

Simulation

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Q1

Q2SA2121

0

I1

0Adc

V1

5Vdc

IC(Q1)

-100mA-30mA -30A

IC(Q1)/ IB(Q1)

10

100

5.0

500

Transistor hFE-IC Characteristics

Circuit Simulation Result

Evaluation Circuit

All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

10

100

1000

0.01 0.1 1 10

- IC(A)

hF

E

Measurement

Simulation

Comparison Graph

Ic(A) hFE

Error(%) Measurement Simulation

-0.03 105.000 106.253 1.193

-0.05 110.000 109.487 -0.466

-0.1 115.000 114.227 -0.672

-0.2 118.000 118.292 0.247

-0.5 120.000 121.516 1.263

-1 120.000 121.085 0.904

-2 115.000 116.076 0.936

-5 93.000 96.858 4.148

-10 68.000 68.579 0.851

Circuit Simulation Result

Simulation Result

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F1

F10

Q1

Q2SA2121

0

I1

0Adc

VC

IC(Q1)

-100mA-30mA -30A

V(Q1:c)

-100mV

-30mV

-5.0V

VCE(Sat)-IC Characteristics

Circuit Simulation Result

Evaluation Circuit

All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

0.01

0.1

1

0.01 0.1 1 10 - IC(A)

- V

CE

(SA

T)

(V)

Measurement

Simulation

Comparison Graph

- IC(A) - VCE(sat)

Error(%) Measurement Simulation

0.03 0.070 0.071 1.429

0.05 0.065 0.066 1.538

0.1 0.058 0.060 3.448

0.2 0.060 0.059 -1.667

0.5 0.075 0.074 -1.333

1 0.110 0.110 0.000

2 0.185 0.187 1.081

5 0.430 0.425 -1.163

Circuit Simulation Result

Simulation Result

All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

VC

Q1

Q2SA2121F1

F10

0

I1

0Adc

IC(Q1)

-100mA -10A

V(Q1:b)

-10mV

-10V

VBE(Sat)-IC Characteristics

Circuit Simulation Result

Evaluation Circuit

All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

0.01

0.1

1

10

0.1 1 10

- IC(A)

- V

BE

(SA

T)

(V)

Measurement

Simulation

Comparison Graph

- IC(A) - VBE(sat)

Error(%) Measurement Simulation

0.1 0.625 0.632 -1.120

0.5 0.700 0.685 -2.143

1 0.730 0.712 -2.466

5 0.790 0.805 1.899

Circuit Simulation Result

Simulation Result

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Time

18us 19us 20us 21us 22us 23us 24us 25us 26us 27us

1 IB(Q1) 2 IC(Q1)

-200mA

-150mA

-100mA

-50mA

-0mA

50mA

100mA

150mA

200mA1

-4.0A

-3.0A

-2.0A

-1.0A

0A

1.0A

2.0A

3.0A

4.0A2

>>

Switching Characteristics Circuit simulation result

Evaluation circuit

Simulation result

Measurement Simulation %Error

tstg (us) 1.900 1.891 -0.474

tf (us) 0.280 0.281 0.357

L2

50nH

0

R1

50

V2

-36

V1

TD = 0.7us

TF = 100nsPW = 20usPER = 50us

V1 = -2

TR = 100ns

V2 = 6

Q1

Q2SA2121R2

104

R3

18

L1

50nH

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Switching Characteristics Reference

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V1

5Vdc

0

I1

0Adc

Q1

Q2SA2121

V_V1

0V 2V 4V 6V 8V 10V

IC(Q1)

0A

-4A

-8A

-12A

-16A

-20A

Output Characteristics

Circuit Simulation Result

Evaluation Circuit

IB=-20mA

- 50mA

-100mA

- 300mA

- 200mA

All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

Output Characteristics Reference