spintronics: how spin can act on charge carriers and vice versa tomas jungwirth university of...
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![Page 1: Spintronics: How spin can act on charge carriers and vice versa Tomas Jungwirth University of Nottingham Institute of Physics Prague](https://reader033.vdocuments.net/reader033/viewer/2022042814/5519ba7d5503467a578b496b/html5/thumbnails/1.jpg)
Spintronics: How spin can act on charge carriers and vice versa
Tomas Jungwirth
University of Nottingham
Institute of Physics Prague
![Page 2: Spintronics: How spin can act on charge carriers and vice versa Tomas Jungwirth University of Nottingham Institute of Physics Prague](https://reader033.vdocuments.net/reader033/viewer/2022042814/5519ba7d5503467a578b496b/html5/thumbnails/2.jpg)
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Fert, Grünberg, et al. 1988Nobel Prize 2007
Sloncyewski, Berger, 1996Buckley Prize at APS MM 2013
STT-MRAM
Reading by GMR (TMR) Writing by STT
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Ie
Ie
Fert, Grünberg, et al. 1988Nobel Prize 2007
Read-out: non-relativistic giant magnetoresistance (GMR)
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Fert, Grünberg, et al. 1988Nobel Prize 2007
Antiferromagnetic arrangement of a ferromagnetic multilayer at B=0
Read-out: non-relativistic giant magnetoresistance (GMR)
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FM
FM
FM
FM
FM
FM
Soft FM
Hard FM
Soft FM
Hard FM
Fixed FM AFM
Soft FM
Fixed FMAFM
Soft FM
1. AFM coupling between FMs at B=0
3. One FM pinned by AFM material
Writing information in spin-valve: towards spintronic memory (MRAM)
2. One FM flips harder than the other FM
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Fixed FM
NM
AFM
Soft FM
Towards reliable switching of a particular MRAM bit
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Fixed FMAFM
FM
FM
Toggle switching first commercial MRAMs
“Synthetic AFM“
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Spins injected from external polarizer in a non-uniform magnetic structure
MpM
Ie
Writing by current: non-relativistic spin-transfer torque (STT)
Sloncyewski, Berger, 1996Buckley Prize at APS MM 2013
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MRAM: universal memory
Write with magnetic field:on market since 2006
Write with current (STT-MRAM):on market since 2013
scales with current
scales with current density
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MRAM: universal memory Compatible with CMOS
GB MRAMs in few years
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Conventional architecture with CMOS New architectuture with MRAM
kB
MB
GB
TB
hugegap
MRAM
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Worldwide MRAM development
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Spin-transistor
Datta, Das, APL 1990
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Conventional architecture with CMOS New architectuture with spin-memory/logic
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Ie
Ie
Fert, Grünberg, et al. 1988Nobel Prize 2007
Read-out: non-relativistic giant magnetoresistance (GMR)
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M
Kelvin, 1857
Ie
Read-out: relativistic anisotropic magnetoresistance (AMR)Spintronic effect 150 years ahead of time
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M
Ie
Kelvin, 1857
Read-out: relativistic anisotropic magnetoresistance (AMR)Spintronic effect 150 years ahead of time
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“Mott“ non-relativistic two-spin-channel model of ferromagnets
“Dirac“ relativistic spin-orbit coupling
I
I I
I
Mott, 1936
Dirac, 1928
Two paradigms for spintronics
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Spin-orbit coupling
nucleus rest frame electron rest frame
vI Q rE3
04 r
Q
3
0
4 r
rIB
EvEvB 200
1
c EvSS
2B
mc
egH BSO
Lorentz transformation Thomas precession
2 2
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Spin-orbit coupling: quantum relativistic physics
),(2
),(
2
1
2
2
22
22
trrm
trt
i
mvm
pE
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)/1(/1
,
22
02
cv
mmmcE
Spin-orbit coupling: quantum relativistic physics
Dirac equation
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Spin-orbit coupling: quantum relativistic physics
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spcE
spin and orbital motion coupled
Ultra-relativistic quantum particles (neutrino)
Dirac equation
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spin and orbital motion coupled
Ultra-relativistic quantum particles (neutrino)
spcE
Dirac equation
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spin and orbital motion coupled
Ultra-relativistic quantum particles (neutrino)
spcE
Dirac equation
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Ohmic “Dirac“ device: AMR
Magnetization-orientation-dependent scattering
Kelvin, 1857
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Ohmic “Mott“ device: GMR
Spin-channel-dependent scattering
Fert, Grünberg, 1988
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Tunneling “Mott“ device: TMR
MRAM
Spin-channel-dependent tunneling DOS
Julliere 1975, Moodera et al., Miyazaki & Tezuka 1995
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Tunneling “Dirac“ device: TAMR
Gould, TJ et al. PRL ‘04
Magnetization-orientation-dependent tunneling DOS
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Chemical potential controlled “Dirac“ device
Wunderlich, TJ et al. PRL ‘06
Magnetization-orientation-dependent chemical potential
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++
--
MagnetDielectric
Non-magneticchannel
M
Chemical potential of magnetic gate changes
Charge on magnetic gate changes
Polarisation charge on non-magnetic channel
II
Dirac spintronic device without current through magnet
Ciccarelli, Ferguson, TJ et al. APL ‘12
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MagnetDielectric
Non-magneticchannel
++
--
M
Chemical potential of magnetic gate changes
Charge on magnetic gate changes
Polarisation charge on non-magnetic channel
II
Dirac spintronic device without current through magnet
Ciccarelli, Ferguson, TJ et al. APL ‘12
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MagnetDielectric
Non-magneticchannel
+++
---M--
++
Chemical potential of magnetic gate changes
Charge on magnetic gate changes
Polarisation charge on non-magnetic channel
II
Dirac spintronic device without current through magnet
Ciccarelli, Ferguson, TJ et al. APL ‘12
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DVg = Dm/e
Ciccarelli, Ferguson, TJ et al. APL ‘12
Dirac spintronic device without current through magnet
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Inverted approach to spin-transistorDirect approach to spin-transistor
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Inverted approach to spin-transistorDirect approach to spin-transistor
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Inverted approach to spin-transistorDirect approach to spin-transistor
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Inverted approach to spin-transistorDirect approach to spin-transistor
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Inverted approach to spin-transistorDirect approach to spin-transistor