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Subcircuits Example subcircuits Each consists of one or more transistors. They are not used by themselves.

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Page 1: Subcircuits Example subcircuits Each consists of one or more transistors. They are not used by themselves

SubcircuitsExample

subcircuits

Each consists of one or more transistors.They are not used by themselves.

Page 2: Subcircuits Example subcircuits Each consists of one or more transistors. They are not used by themselves

Subcircuits

• Switches

• Diodes/active resistors

• Current mirrors

• Current sources/current sinks

• Current/voltage references

• Band gap references

Page 3: Subcircuits Example subcircuits Each consists of one or more transistors. They are not used by themselves

MOS switchesIdeal Switch

MOS transistor as a switch

Page 4: Subcircuits Example subcircuits Each consists of one or more transistors. They are not used by themselves

Non-idealities in a switch

Page 5: Subcircuits Example subcircuits Each consists of one or more transistors. They are not used by themselves

Simple approximationOn operation: VG >> VS or VD, VDS small, triode

RONA B

111

)()(

TGSox

DSTGSox

DS

DON VV

L

WCVVV

L

WC

v

iR

Off operation: VGS < VT , cutoff

A B

1

DS

DOff v

iR Very good off-char

Page 6: Subcircuits Example subcircuits Each consists of one or more transistors. They are not used by themselves
Page 7: Subcircuits Example subcircuits Each consists of one or more transistors. They are not used by themselves

Observations:

•RON depends on W, L, VG, VT, VDS, etc

•RON is nonlinear (depending on signal)

Strategies:

•Use large W and small L to reduce RON

•Use large VGS to reduce the effect of signal dependency•Use bootstrapping to increase VGS beyond VDD–VSS

•Use constant VGS

•Use constant VB so as to have fixed VT

Want: RON small and constant

Page 8: Subcircuits Example subcircuits Each consists of one or more transistors. They are not used by themselves

Effects of switch non-idealities• Finite ON Resistance

– Non-zero charging and discharging time– Limit settling– Limits conversion rate

Ideally: instantaneous charging

Actually: takes time

Page 9: Subcircuits Example subcircuits Each consists of one or more transistors. They are not used by themselves

• Signal level dependence of RON

– Different settling behavior at different signal levels

– Introduces nonlinearity– Generate higher order harmonics

Vin: puresine wave

VC1: has harmonicdistortions

Page 10: Subcircuits Example subcircuits Each consists of one or more transistors. They are not used by themselves

• Finite OFF Current– Leakage of a held voltage– Coupling through the switch– Accumulates with time

Page 11: Subcircuits Example subcircuits Each consists of one or more transistors. They are not used by themselves

Clock Feed through

Page 12: Subcircuits Example subcircuits Each consists of one or more transistors. They are not used by themselves

EXAMPLE - Switched Capacitor Integrator (slow clock edge)

Assume:

Page 13: Subcircuits Example subcircuits Each consists of one or more transistors. They are not used by themselves

At t2:

At t3:

Once M2 turns on at t3, all charge on C1 is transferred to C2

Page 14: Subcircuits Example subcircuits Each consists of one or more transistors. They are not used by themselves

Between t3 and t4 additional charge is transferred to C1 from the channel capacitance of M2.

At t4:

Ideal transfer:

Total error:

Page 15: Subcircuits Example subcircuits Each consists of one or more transistors. They are not used by themselves

Charge injection

When switch is turned off suddenly, charges trapped in the channel injected both either D and S side equally.

The amount of trapped charges depends on the slope of VG

Page 16: Subcircuits Example subcircuits Each consists of one or more transistors. They are not used by themselves

=Uslow regime:

Hold value error on CL:

L

Page 17: Subcircuits Example subcircuits Each consists of one or more transistors. They are not used by themselves

In the fast edge regime:

Hold voltage error on CL:

Study the example in the book

Page 18: Subcircuits Example subcircuits Each consists of one or more transistors. They are not used by themselves

Dummy transistor to cancel clock feed through

Complete cancellation is difficult.

Requires a complementary clock.

Page 19: Subcircuits Example subcircuits Each consists of one or more transistors. They are not used by themselves

Use CMOS switches

Advantages -1.) Larger dynamic range.2.) Lower ON resistance.

Disadvantages -1.) Requires complementary clock.2.) Requires more area.

Page 20: Subcircuits Example subcircuits Each consists of one or more transistors. They are not used by themselves

Voltage doubler for gate overdrive

t2t1

Page 21: Subcircuits Example subcircuits Each consists of one or more transistors. They are not used by themselves

Constant VGS Bootstrapping

=0

VDDVG=0

=1

VGS~VDD

Page 22: Subcircuits Example subcircuits Each consists of one or more transistors. They are not used by themselves

When =1:

Cp: total parasitic capacitance connected to top plate of C3.

Page 23: Subcircuits Example subcircuits Each consists of one or more transistors. They are not used by themselves

PMOS version

offon

Page 24: Subcircuits Example subcircuits Each consists of one or more transistors. They are not used by themselves

Concept:

Switched capimplementation

Page 25: Subcircuits Example subcircuits Each consists of one or more transistors. They are not used by themselves

Summary on Switches• To reduce RON

– Use large W and small L– Use CMOS instead of NMOS or PMOS– Use large |VGS|

• To reduce clock feed through– Use cascode– Use dummy transistor

• To reduce charge injection– Use dummy– Use slow clock edge– Use complementary clock on switch and dummy

• To improve linearity– Use large |VGS|– Use vin-independent VGS– Use vin-independent VBS (PMOS switch)

Page 26: Subcircuits Example subcircuits Each consists of one or more transistors. They are not used by themselves

Diodes And Active Resistors

• Simple diode connection

• Voltage divider

• Extending the dynamic range

• Parallel MOSFET resistor– Extending the dynamic range

• Differential resistor– Single MOSFET– Double MOSFET

Page 27: Subcircuits Example subcircuits Each consists of one or more transistors. They are not used by themselves

Diode Connection VDS = VGS Always in saturation

If v > VT, i > 0else i = 0

diode

v

i

VT

Page 28: Subcircuits Example subcircuits Each consists of one or more transistors. They are not used by themselves

Generally, gm ≈ 10 gmbs ≈ 100 gds

If VBS=0,

mdsmout gggr

11

Page 29: Subcircuits Example subcircuits Each consists of one or more transistors. They are not used by themselves

Voltage Division

Equating iD1 to iD2 results in:

VDS1 +VDS2 = VDD - VSS

Can use different W/L ratio to achievedesired voltage division

Use less power than resistive divider

Page 30: Subcircuits Example subcircuits Each consists of one or more transistors. They are not used by themselves

Active vs passive resistors

Ro

Ro

Suppose Vo=(VDD+VSS)/2

gm1=gm2=VEB=10*0.2=2 m

Ro=1/4m = 250 ohm

Io=/2 *(VEB)2=0.2mA

To achieve the same Ro, needtwo 500 ohm resistors.

Io=/(2*500)=2mA, 10 times

=2

=0

Consumes 10 times more power

Page 31: Subcircuits Example subcircuits Each consists of one or more transistors. They are not used by themselves

Current sources / sinks

Current sink

Current sourceI

I

V

V

V

I

Page 32: Subcircuits Example subcircuits Each consists of one or more transistors. They are not used by themselves

Non-ideal current sources / sinks

Page 33: Subcircuits Example subcircuits Each consists of one or more transistors. They are not used by themselves

Two critical figures of meritHow flat the operating portion is

How small the non-operating region is

rout and vmin

For the simple sink on prev slide:

TGS

Dout

VVv

Ir

min

1

Page 34: Subcircuits Example subcircuits Each consists of one or more transistors. They are not used by themselves

Increasing Rout

Page 35: Subcircuits Example subcircuits Each consists of one or more transistors. They are not used by themselves

Cascode Current Sink

Page 36: Subcircuits Example subcircuits Each consists of one or more transistors. They are not used by themselves

Very flat

Too large

Page 37: Subcircuits Example subcircuits Each consists of one or more transistors. They are not used by themselves

Reduction of VMIN

rout ≈ rds1*gm2rds2 is large which is good

But vmin = vT +2VON needs to be reduced

Page 38: Subcircuits Example subcircuits Each consists of one or more transistors. They are not used by themselves

Both just saturating

But the 2 IREFs must be the same. How?

Page 39: Subcircuits Example subcircuits Each consists of one or more transistors. They are not used by themselves

M6 is ¼ the size, it requires 2 times over drive, or 2 times VEB, or 2 time VON

Very flat

VMIN is much smaller

Page 40: Subcircuits Example subcircuits Each consists of one or more transistors. They are not used by themselves

Alternative method

M5 is ¼ the size

Again, the 2 IREFs must be the same.

Page 41: Subcircuits Example subcircuits Each consists of one or more transistors. They are not used by themselves

VON ≈ 0.6V

Larger W/L ratio can significantly reduce VON

Page 42: Subcircuits Example subcircuits Each consists of one or more transistors. They are not used by themselves

Matching Improved by Adding M3

Why is it better now?

Page 43: Subcircuits Example subcircuits Each consists of one or more transistors. They are not used by themselves

Regulated Cascode Current Sink

Near triode, VDS3↓, iout ↓, VGS4 ↓, VD4 or VG5 ↑,Iout ↑.

Page 44: Subcircuits Example subcircuits Each consists of one or more transistors. They are not used by themselves

HW:

As we pointed out, the circuit on the previous page suffers from a large Vmin.

1.Modify the circuit to reduce Vmin without affecting rout.

2.Once you do that, VDS for M1 and M2 are no longer match. Introduce another modification so that the VDSs are matched.

Page 45: Subcircuits Example subcircuits Each consists of one or more transistors. They are not used by themselves

=

Page 46: Subcircuits Example subcircuits Each consists of one or more transistors. They are not used by themselves
Page 47: Subcircuits Example subcircuits Each consists of one or more transistors. They are not used by themselves

Current Mirrors/Current Amplifiers

Page 48: Subcircuits Example subcircuits Each consists of one or more transistors. They are not used by themselves
Page 49: Subcircuits Example subcircuits Each consists of one or more transistors. They are not used by themselves

Simple Current Mirrors

Assuming square law model:

Page 50: Subcircuits Example subcircuits Each consists of one or more transistors. They are not used by themselves

Simplest example

Page 51: Subcircuits Example subcircuits Each consists of one or more transistors. They are not used by themselves

Use of transistor W to control current gains

Page 52: Subcircuits Example subcircuits Each consists of one or more transistors. They are not used by themselves

If Cox and VT matched:

If vDS matched:

Current gain or mirror gain is controlled by geometric ratio, which can be made quite accurate

Page 53: Subcircuits Example subcircuits Each consists of one or more transistors. They are not used by themselves

Sources of Errors • Mismatches in W/L ratios

– Use large W, L– PLI

• Mismatches in Cox

– Large area, common centroid, higher order gradient cancellation

• Mismatches in vDS

– Make vDS the same

• Mismatches in VT

– Large area, cancel gradient, same VBS

Page 54: Subcircuits Example subcircuits Each consists of one or more transistors. They are not used by themselves

effect:

Page 55: Subcircuits Example subcircuits Each consists of one or more transistors. They are not used by themselves

VT mismatch effect:

Page 56: Subcircuits Example subcircuits Each consists of one or more transistors. They are not used by themselves

SensitivityA systematic way of computing errors.

r =

...

,...),(

2

22

21

11

1

21

x

x

y

x

x

f

x

x

y

x

x

f

y

y

xxfy

1

11

22

22

1

1

2

2

1

1

2

2

2

2

1

)()(

1

)1(

1

)1()(2

)(2

)(

1

12

1

12

ox

ox

ox

ox

DS

DS

DS

DS

TGS

TGS

TGS

TGS

LWLW

LWLW

C

C

C

C

v

v

v

v

VV

VV

VV

VV

r

r

Page 57: Subcircuits Example subcircuits Each consists of one or more transistors. They are not used by themselves

Note: common mode errors do not contribute to matching errors, only differential errors do

Therefore, can take:

2/)()()(

2/

2/

1122

12

12

oxoxox

DSDSDS

TTT

CCC

vvv

VVV

ox

ox

DS

DS

TGS

T

LWLW

LWLW

C

C

v

v

VV

V

r

r

)(

12

)(

21

12

21

12

Page 58: Subcircuits Example subcircuits Each consists of one or more transistors. They are not used by themselves

Strategies to reduce errors

• Matching layout– PLI, common centroid, symmetry, gradient,…– Increased area

• Matching operating conditions– VD, VS, VB, current densities, … use cascoding

to fix VDS

• Reduce the sensitivies– Use large VGS-VT

– Make equivalent small, make go small, use cascoding to reduce go

Page 59: Subcircuits Example subcircuits Each consists of one or more transistors. They are not used by themselves

Straightforward layout to achieve mirror ratio of 4:

Matching accuracy not good.

Page 60: Subcircuits Example subcircuits Each consists of one or more transistors. They are not used by themselves

Will have better matchingBut: only approximate common centroid

no plican be more compact

HW: suggest a better layout for ratio of 4.

G G G G G GG G G GS S S S S S

Page 61: Subcircuits Example subcircuits Each consists of one or more transistors. They are not used by themselves

Cascoding

M1 and M2 are the mirror pair that determines io.

VDS1 and VDS2 matched

go is small

Page 62: Subcircuits Example subcircuits Each consists of one or more transistors. They are not used by themselves

Small signal model

Page 63: Subcircuits Example subcircuits Each consists of one or more transistors. They are not used by themselves
Page 64: Subcircuits Example subcircuits Each consists of one or more transistors. They are not used by themselves

Wilson Current Mirror

go is small

VDS1 and VDS2 not matched

Page 65: Subcircuits Example subcircuits Each consists of one or more transistors. They are not used by themselves

Small signal circuit

Page 66: Subcircuits Example subcircuits Each consists of one or more transistors. They are not used by themselves

Computation of rout

Page 67: Subcircuits Example subcircuits Each consists of one or more transistors. They are not used by themselves
Page 68: Subcircuits Example subcircuits Each consists of one or more transistors. They are not used by themselves

Improved Wilson Current Mirror

Page 69: Subcircuits Example subcircuits Each consists of one or more transistors. They are not used by themselves

In the improved Wilson current mirror:

What is rout?

What is Vmin?

The resistance from D2 to GND is 1/gm which is small. Why not connect G2 to a constant bias to increase that impedance?

HW:

Page 70: Subcircuits Example subcircuits Each consists of one or more transistors. They are not used by themselves

SPICE simulation

Page 71: Subcircuits Example subcircuits Each consists of one or more transistors. They are not used by themselves

Regulated Cascode Current Mirror

Same as the regulated cascoded curren sink

VDS2 is very stable with respect to vo, but not insensitive to Ireg change, not necessarily better matching

Page 72: Subcircuits Example subcircuits Each consists of one or more transistors. They are not used by themselves

Implementation of IREG using a simple current mirror

Page 73: Subcircuits Example subcircuits Each consists of one or more transistors. They are not used by themselves

Applications of current mirrors

Common source amplifier: Load for C.S. Amp

Page 74: Subcircuits Example subcircuits Each consists of one or more transistors. They are not used by themselves

Common drain amplifier (source follower)

Page 75: Subcircuits Example subcircuits Each consists of one or more transistors. They are not used by themselves

Differential input single-ended output gain stage

Page 76: Subcircuits Example subcircuits Each consists of one or more transistors. They are not used by themselves