supporting information identification of cancer cells ... · pc, cv 2-17 457, 514, 632 x. yu et.al....
TRANSCRIPT
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Supporting Information
Self-assembled nanoporous graphene quantum dot-Mn3O4
nanocomposites for surface-enhanced Raman scattering based
identification of cancer cells
Chuanqing Lan, Jingjin Zhao, Liangliang Zhang,* Changchun Wen, Yong Huang, Shulin
Zhao*
State Key Laboratory for the Chemistry and Molecular Engineering of Medicinal
Resources, Key Laboratory of Ecology of Rare and Endangered Species and
Environmental Protection of Ministry Education, Guangxi Normal University, Guilin,
541004, China
Experimental CalculationsBand-gap calculation for GQD-Mn3O4
ELUMO, which correlates to the conduction-band energy level, was calculated using
ELUMO=eEred+4.5 V1 (on NHE).However, from SCE to NHE, ELUMO is +0.25 V2, so
ELUMO=eEred+4.75 V. The valence-band energy level was also calculated from the onset
oxidation potential, EHOMO = eEox + 4.75 V, and the energy gap is defined as Eg = ELUMO -
EHOMO. From these calculations, the ECB = -4.39 eV, and EVB = -5.91 eV. For RhB,
ELUMO = -3.50 eV, and EHOMO = -5.50 eV1.
MTT assay.
The cells were grown in a humidified atmosphere containing 5% CO2 at 37 °C in RPMI
1640 medium supplemented with 10% fetal bovine serum (FBS, invitrogen), 100 mg/ mL
streptomycin and 100 units/mL penicillin. The cytotoxicity of the GQD-Mn3O4 was
evaluated using a MTT assay. The cells were seeded and incubated in a 96-well plate
Electronic Supplementary Material (ESI) for RSC Advances.This journal is © The Royal Society of Chemistry 2017
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overnight at a density of 1×104 cells per well for 24 h. The culture medium was then
removed, the GQD-Mn3O4 solution was added into each well with increasing
concentration from 0 to 800 μg mL-1 and incubated for 24 h before replacing the medium
with 200 mL of fresh complete medium containing 20 mL of MTT (5 mg/mL in PBS).
The plate was incubated for another 4 h before all medium was removed and 150
mL/well of DMSO was added, followed by shaking for 15 min. The absorbance of each
well was measured at 570 nm using an Enzyme-linked Immunosorbent Assay (ELISA)
reader with pure DMSO as a blank. Non-treated cells were used as a control and the
relative cell viability (mean%×SD, n=3) was expressed as Abssample/Abscontrol×100%.
Calculation of Raman enhancement factor (EF)
The EF was calculated by comparing the intensity of the surface-enhanced Raman signals
(Isurf) with that of the aqueous RhB solution (INsurf).3, 4
EF = (Isurf / INsurf)(NNsurf/Nsurf)
Nsurf represents the number of RhB molecules that contribute to the SERS obtained from
the active substrate, and NNsurf represents the number of moleculesthat contribute to the
Raman signal obtained in the RhB aqueous solution. The spot size of the laser is 1 µm
and the penetration depth is ∼2 µm. In this calculation, we assume that the surface of the
active substrate is fully covered by a closely packed monolayer of RhB molecules
(corresponding to maximum coverage). Using this coverage assumption, the estimated
EF is the lowest possible value (lower coverage would lead to a higher estimation of the
EF).Each EF is calculated referring to the nearest peak of the Raman spectrum obtained
in RhB aqueous solution for maximum EF.
The calculation of the contribution of photo-induced charge transfer (CT) to the
molecule polarization tensor in the semiconductor-molecule system
The Herzberg-Teller theory indicates that the contribution of photo-induced charge
transfer (CT) to the molecular polarizability tensor in the semiconductor can be
calculated. This is similar to the calculation for a semiconductor-molecule system
reported by Lombardi, Wang and Zhao.4-8
The intensity of a Raman transition may be obtained from the molecular
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polarizability tensor by the expression:
(1) 2
4
4
'
9
8
c
I I LII
Raman
IL is the incident laser intensity at ω0. ωIF can be shown to be the proportional to the
electromagnetic enhancement factor L2(ωL)L2(ωS), where ω and ωI’I is a molecular
transition frequency between the states I and I’ (presumably two different vibronic levels
of the ground state Ie), respectively.
Because the GQDs have EM enhancement properties, the plasmon resonance in SERS
should be considered. The IL can be expressed as a function of the complex dielectric
function ε(ω) = ε1+ iε2, and the dielectric constant ε0 as follows:
(2)
201
0
2 iI L
Thus the expression for the polarizability tensor by second-order perturbation theory in
the molecule-semiconductor system may be written as:
(3)
',
''
IISIKIS EE
ISSI
EE
ISSI
hh
Where S represents all the other states of the molecule, µ is the dipole moment
operatorand the subscripts ρ and σ represent the three directions in space (X, Y, Z). Using
the zero-order Born-Oppenheimer approximation, all the states (I, I’, S) can be written as
a product of the electronic and vibrational wave functions as follows:
(4)iII e
(5)fII e'
(6)kSS e
Where the subscript e indicates purely electronic states and lowercase letters represent
vibrational functions. The Herzberg-Teller theory states that even small vibrations may
cause mixing of zero-order Born-Oppenheimer states, allowing us to describe the
semiconductor-molecule system as:
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(7)S eSRe kRQkSS ,,
(8) 00/ SRSRSR EEh
(9)kRQHkSh eeNeSR ,/,
Where zero refer to zero-order Born-Oppenheimer states, and HeN is the electron nuclear
attraction term in the Hamiltonian, evaluated at the equilibrium nuclear positions (0).Q is
the displacement of the nuclei for a normal mode of the molecule-semiconductor system
and includes molecular normal modes as well as phonon modes of the semiconductor. R
runs over all states of the molecule-semiconductor system. For the purely electronic
transition moment between states, we write:
(10)eeSI IS
(11)eeRI IR
(12)eeSR RS
Substituting this into Eq.(1), the polarizability tensor ασρ in the semiconductor-molecule
system can be written as follows:
(13)CBA
For molecule-semiconductor systems, it should be considered that the most intense SERS
enhancement occurs for the transitions terminating at band edges (EC and EV for the
conduction and valence bands, respectively). So, the charge transfer can borrow intensity
either from molecular transitions (µKI) or from exciton transitions (µVC). Therefore the
exchange of subscripts changes the equations from intensity borrowing in the molecular
states manifold to that in the exciton states manifold. Corresponding changes in the
Herzberg−Teller coupling term (h) follow similarly. In the expressions for A, B and C,
the damping term γ which tends to broaden the resonances and is usually determined
empirically by observation of the homogeneous bandwidth in the optical absorption
spectrum, should be considered.
The A-terms are:
(14) 2222
2
2
01 2 ICIC
ICIC fkki
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(15) 2222
2
2
01 2 VKVK
VKVK
VK
fkkiR
For the A-terms, only one other resonance is obtained–either the molecular-HOMO to
conduction-band edge CT (at ω =ωCT) or the valence-band edge tomolecular LUMO CT
(at ω = ωVK).
The B-terms are:
(16) 2222222
2
2
01 2 KIKIICIC
kCKICKI fQih
(17) 2222222
2
2
01 2 VCVCVCIC
kIVICVC
ICV
fQihR
Where, B represents the contribution of photo-induced charge transfer from the molecular
HOMO to semiconductor conduction band edge transitions (at ω = ωIC).
The C-terms are:
(18) 2222222
2
2
01 2 KIKIVKIC
kIVVKVK
IVK
fQihR
(19) 2222222
2
2
01 2 CVCVVKIC
kKCVKVC
KVC
fQiR
C represents the contribution of photo-induced charge transfer of the semiconductor-to-
molecule from the valence-band edge to molecular LUMO transitions (at ω = ωVK). This
is illustrated in Figure S13.
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Supplementary figures and tables
Figure S1. TEM image of GQDs extracted from the GQD-Mn3O4 composite after
treatment with 3M HCl.
Figure S2. The size distribution of the GQDs.
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Figure S3. HRTEM image of GQDs extracted from the GQD-Mn3O4 composite after
treatment with 3M HCl.
Figure S4. FTIR of GQDs and the GQD-Mn3O4 nanocomposites.
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Figure S5. Raman spectra of GQDs and the GQD-Mn3O4 nanocomposites where the
labels D and G indicate the position of the D- and G-bands, as described in the main text.
Figure S6. The UV-Vis spectra of GQDs and the GQD-Mn3O4 nanocomposites.
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Figure S7. Raman spectra of RhB on the GQDs after subtracting the baseline.
Figure S8. The Raman spectrum of 50 mM RhB molecules in aqueous solution (black
line) and 10 μM RhB aqueous solution on the GQD-Mn3O4 nanocomposite substrate (red
line).
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Figure S9. 3D fluorescence of the GQDs.
Figure S10. Fluorescence spectra of the GQDs and GQD-Mn3O4 nanocomposites.
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Figure S11. The fluorescence lifetime of RhB+ GQD-Mn3O4 nanocomposites with excitation at 460 nm.
Figure S12. Fluorescence lifetime of RhB with excitation at 460 nm.
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Figure S13. HepG-2 cell viability after add GQD-Mn3O4 by MTT assay
Figure S14. HeLa cell viability after add GQD-Mn3O4 by MTT assay
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Table S1
Comparison of Raman peaks of RhB adsorbed on GQDs and on GQD-Mn3O4
nanocomposites.
RhB in solution
Peak position (cm-1)
GQDsPeak
position (cm-1)
EF GQD-Mn3O4Peak
position (cm-1)
EF Assignments3, 9-11
357 351 410 348 11827 XR stretching
425 421 674 419 20625 XR deformation+ N-H oscillation
585 592 12983 –NH wagging
622 632 60 631 1713 XR + PHR stretching
661 C–H o.p. bending of XR
732 766 164 763 3924 C–H o.p. bending of XR
790 C–H o.p. bending of XR
826 C–H o.p. bending of XR
936 943 5000 XR + PHR stretching
1020 C–H bending of XR
1083 PHR stretching
1147 C–H bending of XR
1204 1190 183 1190 2500 C–H bending of XR
1277 1286 70 1277 1004 C–H bending of XR
1358 1362 131 1361 2770 XR stretching
1388 XR stretching
1437 XR stretching
1516 1508 126 1499 1749 XR stretching
1532 XR stretching
1559 1569 150 1566 5000 PHR stretching
1649 1644 110 1641 795 XR stretching
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Table S2
SERS substrate comparisons (data from references 3,4,8,12-19).
Author Substrate Analyte EF Excited wavelength
(nm)X. Ling et.al. Graphene R6G,
PPP, Pc, CV
2-17 457, 514, 632
X. Yu et.al. Chemical-reduced graphene oxide
RhB 61-684 514
H. Cheng et.al. GQDnanotubes R6G 40-74 632 W. Xu et.al. GERS-Au, GERS-Ag R6G,
CuPc85
(GERS-Au)755
(GERS-Ag)
632
X. Wang et.al. H-Si nanowire R6G 8-28 532 L.G.Quagliano InAs/GaAs quantum
dotsPyridine 103 514
L. Jiang et.al. Cu2O nanosphere 4-MBA 105 488D. Qi et.al. TiO2 photonic
microarrayMB 2×104 532
S. Hayashi et.al.
GaP CuPc 700 514
S. Cong et.al. W18O49 R6G 3.4×105 532
This workGQD,
GQD-Mn3O4
nanocomposite
RhB 674 (GQD),2×104
(GQD-Mn3O4)
514
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