IRFZ40IRFZ42

T SGS-THOMSON^ 7 #« [̂ DWi[L[i(gTOR!]D(gi

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

TYPE VDss ^DS(on) •d

IRFZ40 50 V 0.028 fi 35 A

IRFZ42 50 V 0.035 n 35 A

• VERY LOW Rds (on)• LOW DRIVE ENERGY FOR EASY DRIVE• HIGH TRANSCONDUCTANCE /Crss RATIO

INDUSTRIAL APPLICATIONS:• AUTOMOTIVE POWER ACTUATORS• MOTOR CONTROLS• INVERTERS

N - channel enhancement mode POWER MOS field effect transistors. Easy drive and very fast switch­ing times make these POWER MOS transistors ideal for high speed switching circuits applications such as power actuators driving, motor drive includ­ing brushless motor, hydraulic actuators and many other in automotive and automatic guided vehicle applications. They also find use DC/DC convert­ers and uninterruptible power supplies

ABSOLUTE MAXIMUM RATINGS IRFZ40 IRFZ42

Vos * Drain-source voltage (VGS = 0) 50 V

V DGR * Drain-gate voltage (RGS = 20 Kfi) 50 V

VGS Gate-source voltage ±20 V

•d Drain current (cont.) at Tc = 25°C 35 35 A

•d Drain current (cont.) at Tc = 100°C 32 29 A

'dmO Drain current (pulsed) 160 145 A

*DLM Drain inductive current, clamped (L= 100 *iH) 160 145 A

P.ot Total dissipation at Tc <25°C 125 WDerating factor 1.2 W/°C

Ttg Storage temperature -5 5 to 150 °C

Ti Max. operating junction temperature 150 °C

• Tl = 25°C to 125°C(*) Repetitive Rating: Pulse width limited by max junction temperature

16June 1988

IRFZ40 - IRFZ42

THERMAL DATA

R Thermal resistance junction-case max 1.0 °C/WThermal resistance case-sink typ 0.5 °C/WThermal resistance junction-ambient max 80 °C/W

T, Maximum lead temperature for soldering purpose 300 °C

ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise specified)

Parameters Test Conditions Min. Typ. Max. Unit

OFF

v<br) dss Drain-sourcebreakdown voltage

lD= 250 fiA VGS= 0 50 V

lDSS Zero gate voltagedrain current (VGS = 0)

VDS= Max RatingVDS= Max Rating x 0.8 Tc = 125°C

2501000

*AmA

lGSS Gate-body leakage current (VDS = 0)

VGS= ±20 V ±500 nA

ON **

VGS (th) Gate threshold voltage

V ds = ^ gs ta = 250 iiA 2 4 V

l^n ) On-state drain current

V DS > 'o (on) x RDS(on) max V GS = 10 V 35 A

R0s (on) Static drain-source on resistance

VGs = 10 V lD= 29 A for IRFZ40 for IRFZ42

0.0280.035

fin

DYNAMIC

gfs ** Forwardtransconductance

^DS ̂ (on) x ^DS (on) maxlD= 29 A

17 mho

Cgs Input capacitance C ,^ Output capacitance 0^3 Reverse transfer

capacitance

< <

O D

CO

COII

II o

ro CJi < ii I N

30001200400

PFPFPF

SWITCHING

^ (on) Tum-on time t, Rise time 4 (off) T um-off delay time t, Fall time

Vdd= 2 5 V Id = 29 A Zj = 4.7 0

(see test circuit)

25607025

nsnsnsns

Qg Total gate charge VGS= 1 0 V lD= 64 A VDS= Max Rating x 0.8

(see test circuit)

60 nC

* Y / SGS-THOMSON2/5

IRFZ40 - IRFZ42

ELECTRICAL CHARACTERISTICS (Continued)

Parameters Test Conditions Min. Typ. Max. Unit

SOURCE DRAIN DIODE

^SD Source-drain current 35 A!s d m (’ ) Source-drain current for IRFZ40 160 A

(pulsed) for IRFZ42 145 A

V S D ** Forward on voltageV G S = 0 for IRFZ40 lSD= 51 A 2.5 Vfor IRFZ42 Isd= A6 A 2.2 V

trr Reverse recovery time

T j= 150°C 350 ns

Q rr Reverse recovered charge

l S D = 51 A di/dt = 100 A//rS 2.1 nC

*• Pulsed: Pulse duration < 300 ns, duty cycle $ 1.5%(•) Repetitive Rating: Pulse width limited by max junction temperature

Safe operating areas Thermal impedance Derating curve

Output characteristics Output characteristics Transfer characteristics

51 SGS-THOMSON

IRFZ40- IRFZ42

Transconductance Static drain-source on resistance

0 25 50 75 100 125 150 175 IqCA)

Maximum drain current vs temperature

s

N. IR Z4C r-

IRFZ4

_L25 50 75 100 125 150 Tc TO

Gate charge vs gate-source voltage

Capacitance variation Normalized breakdownvoltage vs temperature

Normalized on resistance vs temperature

Source-drain diode forward characteristics

* v . SGS-THOMSONMiMmiiCTwasses

4/5

IRFZ40- IRFZ42

Clamped inductive test circuit Clamped inductive waveforms

L

Ec=0.75 BV0SS

SC-0242

Switching times test circuit Gate charge test circuit

SC-0216

RESISTOR RESISTOR

SC-0266

S5r r z SCS-THOMSONr