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The top documents tagged [low activation temperature]
Generation of vacancy-related defects during focused swift-ion beam implantation of silicon I.Capan 1, M.Jakšić 1, Ž. Pastuović 1,2, Rainer Siegele 2,
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Statistics: 34 participants from 16 different institutions 8 sessions, 24 talks Poster session
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Generation of vacancy-related defects during focused swift-ion beam implantation of silicon
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