that300 serie

THAT 300 Series

Low-Noise MatchedTransistor Array ICs

THAT Corporation; 45 Sumner Street; Milford, Massachusetts 01757-1656; USATel: +1 508 478 9200; Fax: +1 508 478 0990; Web: www.thatcorp.com

Copyright © 2010, THAT Corporation. Document 600041 Rev 02

FEATURES•4 Matched NPN Transistors

º 300 typical hfe of 100º 300A minimum hfe of 150º 300B minimum hfe of 300

•4 Matched PNP Transistorsº 320 typical hfe of 75

•2 Matched PNP and 2 Matched NPNTransistorsº 340 PNP typical hfe of 75º 340 NPN typical hfe of 100

•Low Voltage Noiseº 0.75 nV/ √Hz (PNP)º 0.8 nV/ √Hz (NPN)

•High Speedº fT = 350 MHz (NPN)º fT = 325 MHz (PNP)

•500 μV matching between devices•Dielectrically Isolated for low crosstalk

and high DC isolation•36V VCEO

APPLICATIONS

•Low Noise Front Ends

•Microphone Preamplifiers

•Log/Antilog Amplifiers

•Current Sources

•Current Mirrors

•Multipliers

The THAT 300, 320 and 340 are largegeometry, 4-transistor, monolithic NPN and/or PNParrays. They exhibit both high speed and low noise,with excellent parameter matching between transis-tors of the same gender. Typical base-spreadingresistance is 25 Ω for the PNP devices (30 Ω for thelow-gain NPNs), so their resulting voltage noise isunder 1 nV/√Hz. This makes the 300 series ideallysuited for low-noise amplifier input stages, log ampli-fiers, and many other applications. The four-NPNtransistor array is available in versions selected forhfe with minimums of 150 (300A) or 300 (300B).

Fabricated in a dielectrically isolated, comple-mentary bipolar process, each transistor is electri-cally insulated from the others by a layer ofinsulating oxide (not the reverse-biased PN junctions

used in conventional arrays). As a result, they exhibitinter-device crosstalk and DC isolation similar tothat of discrete transistors. The resulting lowcollector-to-substrate capacitance produces a typicalNPN fT of 350 MHz (325 MHz for the PNPs).Substrate biasing is not required for normal opera-tion, though the substrate should be ac-grounded tooptimize speed and minimize crosstalk.

An eight-transistor bare-die array with similarperformance characteristics (the THAT 380G) is alsoavailable from THAT Corporation. Please contact usdirectly or through your local distributor for moreinformation. Military-grade temperature rangepackages are available from TT Semiconductor (seewww.ttsemiconductor.com for more information).

Description

SO14340S14-U

DIP142-Matched NPN Transistors and2-Matched PNP Transistors

340P14-U

SO14320S14-U

DIP144-Matched PNP Transistors

320P14-U

SO144-Matched NPN Transistors, Beta = 300 min.300BS14-U

SO144-Matched NPN Transistors, Beta = 150 min.300AS14-U

SO14300S14-U

DIP144-Matched NPN Transistors, Beta = 60 min.

300P14-U

PackageConfigurationPart Number

Table 1. Ordering Information

Document 600041 Rev 02 of 5 THAT 300 Series Transistor Array ICs


Copyright © 2010, THAT Corporation. All rights reserved.

NPN Collector-Emitter Voltage (BVCEO) 36 VNPN Collector-Base Voltage (BVCBO) 36VPNP Collector-Emitter Voltage (BVCEO) –36 VPNP Collector-Base Voltage (BVCBO) –36 VCollector-Substrate Voltage (BVCS) ± 100 V

Collector Current 30 mAEmitter Current 30 mAOperating Temperature Range (TOP) -40 to +85 °CMaximum Junction Temperature (TJMAX) +125 °CStorage Temperature (TST) -45 to +125 °C

Absolute Maximum Ratings2,3

SPECIFICATIONS1

THAT 300

13

12

Q2

1

2

3

Q1

4

5

6

7

Q3

SUB 11

10

9

8

Q4

SUB

14

THAT 320

13

12

Q2

11

10

9

8

Q4

SUB

1

2

3

4

5

6

7

Q1

Q3

SUB

14

THAT 340

13

12

Q2

11

10

9

8

Q4

SUB

1

2

3

4

5

6

7

Q1

Q3

SUB

14

Figure 1. 300 Pinout Figure 2. 320 Pinout Figure 3. 340 Pinout

V—0.05——0.05——0.05—IC = 1 mA, IB = 100μAVCE(SAT)NPN Collector Saturation Voltage

Ω—TBD——TBD——30—VCB = 10 V, IC = 1 mArbbNPN Base Spreading Resistance

Ω—2——2——2—VCB = 0V, 10 μA < IC < 10mArBENPN Bulk Resistance

pA—25——25——25—VCB = 25 VICBONPN Collector-Base LeakageCurrent

nAnA

300—

1001

——

600—

2002

——

1500—

5005

——

IC = 1 mAIC = 10 μAIOS

NPN ΔIB 300: |IB1-IB2| ; |IB3-IB4| 340: |IB1-IB2|

mVmV

3—

0.50.5

——

3—

0.50.5

——

3—

0.50.5

——

IC = 1 mAIC = 10 mAVOS

NPN ΔVBE 300: |VBE1-VBE2| ; |VBE3-VBE4| 340: |VBE1-VBE2|

MHz—350——350——350—IC = 1 mA, VCB = 10VfTNPN Gain-Bandwidth Product

nV√Hz—1——0.9——0.8—VCB = 10V, IC = 1 mA, 1kHzeNNPN Noise Voltage Density

%—4——4——4—VCB = 10V, IC = 1mAΔhfeNPN Current Gain Matching

——

——

300—

——

——

150—

——

100100

60—

VCB = 10 V, IC = 1 mAIC = 10 µAhfeNPN Current gain

MaxTypMinMaxTypMinMaxTypMinUnits300B300A300 / 340(Q1,Q2)ConditionsSymbolParameter

NPN Electrical Characteristics2

THAT 300 Series Transistor Array ICs of 5 Document 600041 Rev 02



SPECIFICATIONS1 (Cont’d)

Parameter Symbol Conditions Min Typ Max Units

PNP Current Gain hfe VCB = -10 VIC = -1 mA 50 75 —IC = -10 μA — 75 —

PNP Current Gain Matching Δhfe VCB = -10 V, IC = -1 mA — 5 — %

PNP Noise Voltage Density eN VCB = -10 V, IC = -1 mA, 1 kHz — 0.75 — nV√Hz

PNP Gain-Bandwidth Product fT IC = -1 mA, VCB = -10 V — 325 — MHz

PNP ΔVBE VOS IC = -1 mA — 0.5 3 mV 320: |VBE1-VBE2| ; |VBE3-VBE4| IC = -10 μA — 0.5 — mV 340: |VBE1-VBE2|

PNP ΔIB IOS IC = -1 mA — 700 1800 nA 320: |IB1-IB2| ; |IB3-IB4| IC = -10 μA — 7 — nA 340: |IB1-IB2|

PNP Collector-Base Leakage Current ICBO VCB = -25 V — –25 — pA

PNP Bulk Resistance rBE VCB = 0 V, -10μA > IC> -10 mA — 2 — Ω

PNP Base Spreading Resistance rbb VCB = -10 V, IC = -1 mA — 25 — Ω

PNP Collector Saturation Voltage VCE(SAT) IC = -1 mA, IB = -100 μA — –0.05 — V

PNP Output Capacitance COB VCB = -10 V, IE = 0 mA, 100 kHz — 3 — pF

PNP Breakdown Voltage BVCEO IC = -10 mAdc, IB = 0 -36 -40 — V

Input Capacitance CEBO IC = 0 mA, VEB = 0 V — 6 — pF

PNP Electrical Characteristics2

1. All specifications are subject to change without notice.2. Unless otherwise noted, TA = 25ºC.3. Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only; the

functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is notimplied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

pF—5——5——5—IC = 0 mA, VEB = 0 VCEBOInput Capacitance

V—4036—4036—4036IC = 10 μAdc, IB = 0 BVCEONPN Breakdown Voltage

pF—3——3——3—VCB = 10V, IE = 0mA, 100kHzCOBNPN Output Capacitance

MaxTypMinMaxTypMinMaxTypMinUnits300B300A300 / 340(Q1,Q2)ConditionsSymbolParameter

NPN Electrical Characteristics2 (cont’d)

The THAT 300, 320 and 340 are available in 14-pinPDIP and 14-pin surface mount (SOIC) packages.Package dimensions are shown below.

The 300-series packages are entirely lead-free. Thelead-frames are copper, plated with successive layers ofnickel, palladium, and gold. This approach makes itpossible to solder these devices using lead-free and lead-bearing solders.

Neither the lead-frames nor the plastic moldcompounds used in the 300-series contains any hazard-ous substances as specified in the European Union'sDirective on the Restriction of the Use of Certain Hazard-ous Substances in Electrical and Electronic Equipment2002/95/EG of January 27, 2003. The surface-mountpackage is suitable for use in a 100% tin solder process.

Document 600041 Rev 02 of 5 THAT 300 Series Transistor Array ICs



0.750±0.004(19.05±0.10)

0.25±.004(6.35±0.10)

0.30 ±0.02(7.62 ±0.5)0.060

(1.52)

0.075(1.91)

0.10 Typ.(2.54)

0.018(0.46)

0.125±0.004(3.18±0.10)Typ.

1

0.010(0.25)

Figure 4. Dual-In-Line Package Outline

0.050(1.27)Typ

0.245(6.2)Max

0.157(3.99)Max

0.018 (0.46)Max

0.344 (8.74)Max

0.069(1.75)Max 0.010

(0.25)Max

1

Figure 5. Surface-Mount Package Outline

Packaging and Soldering Information

Parameter Symbol Conditions Typ Units

Through-hole package See Fig. 4 for dimensions 14 Pin PDIP

Thermal Resistance θJA DIP package soldered to board 100 ºC/W

Environmental Regulation Compliance Complies with January 27, 2003 RoHS requirements

Surface mount package See Fig. 5 for dimensions 14 Pin SOP

Thermal Resistance θJA SO package soldered to board 100 ºC/W

Soldering Reflow Profile JEDEC JESD22-A113-D (250 ºC)

Moisture Sensitivity Level MSL Above-referenced JEDEC soldering profile 1

Environmental Regulation Compliance Complies with RoHS requirements

Package Characteristics

DMMT3906W MATCHED PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features • Epitaxial Planar Die Construction • Intrinsically Matched PNP Pair (Note 1) • Small Surface Mount Package • 2% Matched Tolerance, hFE, VCE(SAT), VBE(SAT) • Lead Free/RoHS Compliant (Note 2) • Qualified to AEC-Q101 Standards for High Reliability • "Green" Device (Note 4 and 5)

Mechanical Data • Case: SOT-363 • Case Material: Molded Plastic. UL Flammability

Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020C • Terminals: Solderable per MIL-STD-202, Method 208 • Lead Free Plating (Matte Tin Finish annealed over Alloy 42

leadframe). • Terminal Connections: See Diagram • Marking Information: K4B, See Page 4 • Ordering & Date Code Information: See Page 4 • Weight: 0.015 grams (approximate)

SOT-363 Dim Min Max

A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Nominal F 0.30 0.40 H 1.80 2.20 J — 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.25 α 0° 8°

All Dimensions in mm

A

M

J LD

B C

H

K

F

C2 E2 E1

B2 B1 C1

Maximum Ratings @TA = 25°C unless otherwise specified

Characteristic Symbol Value Unit Collector-Base Voltage VCBO -40 V

Collector-Emitter Voltage VCEO -40 V

Emitter-Base Voltage VEBO -5.0 V

Collector Current - Continuous IC -200 mA

Power Dissipation (Note 3) Pd 200 mW

Thermal Resistance, Junction to Ambient (Note 3) RθJA 625 °C/W Operating and Storage Temperature Range Tj, TSTG -55 to +150 °C

Notes: 1. Built with adjacent die from a single wafer. 2. No purposefully added lead.

3. Device mounted on FR5 PCB: 1.0 x 0.75 x 0.62 in.; pad layout as shown on suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 5. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date

Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.

DS30312 Rev. 11 - 2

1 of 4 www.diodes.com

DMMT3906W © Diodes Incorporated

DS30312 Rev. 11 - 2



Electrical Characteristics @TA = 25°C unless otherwise specified

Characteristic Symbol Min Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Collector-Base Breakdown Voltage V(BR)CBO -40 ⎯ V IC = -10μA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO -40 ⎯ V IC = -1.0mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO -5.0 ⎯ V IE = -10μA, IC = 0 Collector Cutoff Current ICEX ⎯ -50 nA VCE = -30V, VEB(OFF) = -3.0V Base Cutoff Current IBL ⎯ -50 nA VCE = -30V, VEB(OFF) = -3.0V ON CHARACTERISTICS (Note 6)

DC Current Gain (Note 7) hFE

60 80

100 60 30

⎯ ⎯

300 ⎯ ⎯

⎯

IC = -100µA, VCE = -1.0V IC = -1.0mA, VCE = -1.0V IC = -10mA, VCE = -1.0V IC = -50mA, VCE = -1.0V IC = -100mA, VCE = -1.0V

Collector-Emitter Saturation Voltage (Note 7) VCE(SAT) ⎯ -0.25-0.40 V IC = -10mA, IB = -1.0mA

IC = -50mA, IB = -5.0mA

Base-Emitter Saturation Voltage (Note 7) VBE(SAT)-0.65

⎯ -0.85-0.95 V IC = -10mA, IB = -1.0mA

IC = -50mA, IB = -5.0mA Base-Emitter Voltage Matching ΔVBE ⎯ -1 mV VCE = -5V, IC = -2mA SMALL SIGNAL CHARACTERISTICS Output Capacitance Cobo ⎯ 4.5 pF VCB = -5.0V, f = 1.0MHz, IE = 0 Input Capacitance Cibo ⎯ 10 pF VEB = -0.5V, f = 1.0MHz, IC = 0 Input Impedance hie 2.0 12 kΩ Voltage Feedback Ratio hre 0.1 10 x 10-4 Small Signal Current Gain hfe 100 400 ⎯ Output Admittance hoe 3.0 60 μS

VCE = 10V, IC = 1.0mA, f = 1.0kHz

Current Gain-Bandwidth Product fT 250 ⎯ MHz VCE = -20V, IC = -10mA, f = 100MHz

Noise Figure NF ⎯ 4.0 dB VCE = -5.0V, IC = -100μA, RS = 1.0kΩ, f = 1.0kHz

SWITCHING CHARACTERISTICS Delay Time td ⎯ 35 ns Rise Time tr ⎯ 35 ns

VCC = -3.0V, IC = -10mA, VBE(off) = 0.5V, IB1 = -1.0mA

Storage Time ts ⎯ 225 ns Fall Time tf ⎯ 75 ns

VCC = -3.0V, IC = -10mA, IB1 = IB2 = -1.0mA

Notes: 6. Short duration pulse test used to minimize self-heating effect. 7. The DC current gain, hFE, (matched at IC = -10mA and VCE = -1.0V) Collector Emitter Saturation Voltage, VCE(SAT),

and Base Emitter Saturation Voltage, VBE(SAT) are matched with typical matched tolerances of 1% and maximum of 2%.

0

50

25 50 75 100 125 150 175 200

P, P

OW

ER

DIS

SIP

ATIO

N (m

W)

D

T , AMBIENT TEMPERATURE (°C)Fig. 1, Max Power Dissipation vs.

Ambient Temperature

A

100

150

200

0

1

100

10

0.1 1 10 100

C, I

NP

UT

CA

PAC

ITA

NC

E (p

F)C

, OU

TPU

T C

APA

CIT

AN

CE

(pF)

IBO

OB

O

V , COLLECTOR-BASE VOLTAGE (V)Fig. 2, Input and Output Capacitance vs.

Collector-Base Voltage

CB

1

10

1,000

100

0.1 1 10 1,000100

h, D

C C

UR

RE

NT

GA

INFE

I , COLLECTOR CURRENT (mA)Fig. 3, Typical DC Current Gain vs.

Collector Current

C

0.01

0.1

10

1

1 10 100 1,000

V, C

OLL

EC

TOR

-EM

ITTE

R

SAT

UR

ATIO

N V

OLT

AGE

(V)

CE(

SAT)

I , COLLECTOR CURRENT (mA)Fig. 4, Typical Collector-Emitter Saturation Voltage

vs. Collector Current

C

0.5

0.6

0.7

0.8

0.9

1.0

1 10

V, B

AS

E-E

MI

100

TTER

SAT

UR

ATIO

N V

OLT

AG

E (V

)BE

(SAT

)

I , COLLECTOR CURRENT (mA)Fig. 5, Typical Base-Emitter

Saturation Voltage vs. Collector Current

C

IIC

B= 10

DS30312 Rev. 11 - 2



Ordering Information (Note 8)

Device Packaging Shipping

DMMT3906W-7-F SOT-363 3000/Tape & Reel

Notes: 8. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.

Marking Information

K4B YM

K4B = Product Type Marking Code YM = Date Code Marking Y = Year ex: T = 2006 M = Month ex: 9 = September

Date Code Key

Year 2002 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 Code N P R S T U V W X Y Z

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D

IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages.

LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated.

DS30312 Rev. 11 - 2



(96-523-D15)

External dimensions (Units: mm)

489

Transistors

General purpose transistor(dual transistors)IMX17

Features1) Two 2SD1484K chips in an SMT

package.2) Mounting possible with SMT3 auto-

matic mounting machine.3) Transistor elements are indepen-

dent, eliminating interference.4) High collector current.

IC = 500mA5) Mounting cost and area can be cut

in half.

StructureEpitaxial planar typeNPN silicon transistor

The following characteristics apply toboth Tr1 and Tr2.

Absolute maximum ratings (Ta = 25C)

490

Transistors IMX17

Electrical characteristics (Ta = 25C)

Packaging specifications

Electrical characteristic curves

491

Transistors IMX17

© Semiconductor Components Industries, LLC, 2007

November, 2007 - Rev. 101 Publication Order Number:

D44H/D

D44H Series (NPN),D45H Series (PNP)

Preferred Devices

Complementary SiliconPower Transistors

These series of plastic, silicon NPN and PNP power transistors canbe used as general purpose power amplification and switching suchas output or driver stages in applications such as switching regulators,converters and power amplifiers.

Features•Low Collector-Emitter Saturation Voltage

VCE(sat) = 1.0 V (Max) @ 8.0 A•Fast Switching Speeds

•Complementary Pairs Simplifies Designs

•Pb-Free Packages are Available*

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector-Emitter VoltageD44H8, D45H8D44H11, D45H11

VCEO6080

Vdc

Emitter Base Voltage VEB 5.0 Vdc

Collector Current- Continuous- Peak (Note 1)

IC1020

Adc

Total Power Dissipation@ TC = 25°C@ TA = 25°C

PD702.0

W

Operating and Storage Junction Temperature Range

TJ, Tstg -55 to +150 °C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction-to-Case RJC 1.8 °C/W

Thermal Resistance, Junction-to-Ambient RJA 62.5 °C/W

Maximum Lead Temperature for SolderingPurposes: 1/8″ from Case for 5 Seconds

TL 275 °C

Stresses exceeding Maximum Ratings may damage the device. MaximumRatings are stress ratings only. Functional operation above the RecommendedOperating Conditions is not implied. Extended exposure to stresses above theRecommended Operating Conditions may affect device reliability.1. Pulse Width 6.0 ms, Duty Cycle 50%.

*For additional information on our Pb-Free strategy and soldering details, pleasedownload the ON Semiconductor Soldering and Mounting TechniquesReference Manual, SOLDERRM/D.

Device Package Shipping†

D44H8 TO-220

TO-220ABCASE 221A-09

STYLE 1

50 Units/Rail

3

4

1

10 AMP COMPLEMENTARYSILICON POWER

TRANSISTORS 60, 80 VOLTS

2

MARKINGDIAGRAM

D4xHyyGAYWW

http://onsemi.com

Preferred devices are recommended choices for future useand best overall value.

D45H8G TO-220(Pb-Free)

50 Units/Rail

ORDERING INFORMATION

D44H11 TO-220 50 Units/Rail



†For information on tape and reel specifications,including part orientation and tape sizes, pleaserefer to our Tape and Reel Packaging SpecificationsBrochure, BRD8011/D.

D4xHyy = Device Codex = 4 or 5yy = 8 or 11

A = Assembly LocationY = YearWW = Work WeekG = Pb-Free Package


50 Units/Rail


50 Units/Rail


50 Units/Rail

D44H Series (NPN),

http://onsemi.com2

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

CharacteristicÎÎÎÎÎÎÎÎ

SymbolÎÎÎÎÎÎÎÎ

MinÎÎÎÎÎÎÎÎ

TypÎÎÎÎÎÎÎÎ

MaxÎÎÎÎÎÎ

UnitÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOFF CHARACTERISTICSÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector-Emitter Sustaining Voltage D44H8, D45H8(IC = 30 mAdc, IB = 0 Adc) D44H11, D45H11

ÎÎÎÎÎÎÎÎÎÎÎÎ

VCEO(sus)


6080


--


--

ÎÎÎÎÎÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current (VCE = Rated VCEO, VBE = 0)ÎÎÎÎÎÎÎÎ

ICESÎÎÎÎÎÎÎÎ

-ÎÎÎÎÎÎÎÎ

-ÎÎÎÎÎÎÎÎ

10ÎÎÎÎÎÎ

AÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter Cutoff Current (VEB = 5.0 Vdc)

ÎÎÎÎÎÎÎÎIEBO

ÎÎÎÎÎÎÎÎ-

ÎÎÎÎÎÎÎÎ-

ÎÎÎÎÎÎÎÎ10

ÎÎÎÎÎÎAÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ


ON CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain(VCE = 1.0 Vdc, IC = 2.0 Adc)(VCE = 1.0 Vdc, IC = 4.0 Adc)


hFE ÎÎÎÎÎÎÎÎÎÎÎÎ

6040


--


--

ÎÎÎÎÎÎÎÎÎ

-


Collector-Emitter Saturation Voltage(IC = 8.0 Adc, IB = 0.4 Adc)


VCE(sat) ÎÎÎÎÎÎÎÎÎÎÎÎ

-


-


1.0

ÎÎÎÎÎÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base-Emitter Saturation Voltage(IC = 8.0 Adc, IB = 0.8 Adc)

ÎÎÎÎÎÎÎÎ

VBE(sat) ÎÎÎÎÎÎÎÎ

- ÎÎÎÎÎÎÎÎ

- ÎÎÎÎÎÎÎÎ

1.5 ÎÎÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC CHARACTERISTICS


Collector Capacitance(VCB = 10 Vdc, ftest = 1.0 MHz) D44H Series

D45H Series


Ccb ÎÎÎÎÎÎÎÎÎÎÎÎ

--


90160


--

ÎÎÎÎÎÎÎÎÎ

pF

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Gain Bandwidth Product(IC = 0.5 Adc, VCE = 10 Vdc, f = 20 MHz) D44H Series

D45H Series

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

fTÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

--


5040


--


MHz


SWITCHING TIMES


Delay and Rise Times(IC = 5.0 Adc, IB1 = 0.5 Adc) D44H Series

D45H Series


td + tr ÎÎÎÎÎÎÎÎÎÎÎÎ

--


300135


--

ÎÎÎÎÎÎÎÎÎ

ns

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Storage Time(IC = 5.0 Adc, IB1 = IB2 = 0.5 Adc) D44H Series

D45H Series


tsÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

--


500500


--


ns


Fall Time(IC = 5.0 Adc, IB1 = 102 = 0.5 Adc) D44H Series

D45H Series


tf ÎÎÎÎÎÎÎÎÎÎÎÎ

--


140100


--

ÎÎÎÎÎÎÎÎÎ

ns

D44H Series (NPN),

http://onsemi.com3

Figure 1. D44H11 DC Current Gain Figure 2. D45H11 DC Current Gain

IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)

1010.10.0110

100

1000

1010.10.0110

100

1000h F

E, D

C C

UR

RE

NT

GA

IN

VCE = 1 V

125°C

h FE, D

C C

UR

RE

NT

GA

IN

Figure 3. D44H11 DC Current Gain Figure 4. D45H11 DC Current Gain


1010.10.0110

100

1000

1010.10.0110

100

1000

h FE, D

C C

UR

RE

NT

GA

IN

VCE = 5 V

h FE, D

C C

UR

RE

NT

GA

IN

Figure 5. D44H11 ON-Voltage Figure 6. D45H11 ON-Voltage


1010.10

0.05

0.40

1010.10

0.1

0.3

0.6

SAT

UR

AT

ION

VO

LTA

GE

(V

OLT

S) VCE(sat) @ IC/IB = 10

SAT

UR

AT

ION

VO

LTA

GE

(V

OLT

S)

-40°C

25°C

VCE = 1 V

125°C

-40°C

25°C

125°C

-40°C

25°C

VCE = 5 V

125°C

-40°C

25°C

125°C

-40°C

25°C

0.10

0.15

0.20

0.25

0.30

0.35

0.2

0.5

0.4

VCE(sat) @ IC/IB = 10

125°C

-40°C

25°C

D44H Series (NPN),

http://onsemi.com4

Figure 7. D44H11 ON-Voltage Figure 8. D45H11 ON-Voltage


1010.10

0.2

1.2

1010.10

0.2

0.6

1.4S

AT

UR

AT

ION

VO

LTA

GE

(V

OLT

S) VBE(sat) @ IC/IB = 10

SA

TU

RA

TIO

N V

OLT

AG

E (

VO

LTS

)

125°C

-40°C

25°C

0.4

0.6

0.8

1.0

0.4

1.0

0.8

VBE(sat) @ IC/IB = 10

125°C

-40°C

25°C

1.2

100

1.0

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

5.0 10

TC ≤ 70° CDUTY CYCLE ≤ 50%

2.0 3.0 20 30 50 100

1.0

7.0

D44H/45H8D44H/45H10,11

Figure 9. Maximum Rated Forward BiasSafe Operating Area

70

1.0 sdc

0.1

0.20.3

0.5

2.03.05.0

10

203050

10 s

100 s1.0 ms

I C, C

OLL

EC

TO

R C

UR

RE

NT

(A

MP

S)

0

Figure 10. Power Derating

T, TEMPERATURE (°C)

040 60 100 120 160

40

TC

20

60

0

2.0

TA

1.0

3.0

80 140

TC

TA

20

PD

, PO

WE

R D

ISS

IPA

TIO

N (

WA

TT

S)

t, TIME (ms)

0.010.01 0.05 1.0 2.0 5.0 10 20 50 500 1.0 k0.1 0.50.2

1.0

0.2

0.1

0.05

r(t)

, TR

AN

SIE

NT

TH

ER

MA

L

ZJC(t) = r(t) RJCRJC = 1.56°C/W MAXD CURVES APPLY FOR POWERPULSE TRAIN SHOWNREAD TIME AT t1TJ(pk) - TC = P(pk) ZJC(t)

P(pk)

t1t2

DUTY CYCLE, D = t1/t2

0.2

SINGLE PULSE

RE

SIS

TAN

CE

(N

OR

MA

LIZ

ED

)

Figure 11. Thermal Response

0.5D = 0.5

0.05

0.3

0.7

0.07

0.03

0.02

0.02 100 200

0.1

0.02

0.01

D44H Series (NPN),

http://onsemi.com5

PACKAGE DIMENSIONS

TO-220CASE 221A-09

ISSUE AE

NOTES:1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.2. CONTROLLING DIMENSION: INCH.3. DIMENSION Z DEFINES A ZONE WHERE ALL

BODY AND LEAD IRREGULARITIES AREALLOWED.

DIM MIN MAX MIN MAXMILLIMETERSINCHES

A 0.570 0.620 14.48 15.75B 0.380 0.405 9.66 10.28C 0.160 0.190 4.07 4.82D 0.025 0.035 0.64 0.88F 0.142 0.161 3.61 4.09G 0.095 0.105 2.42 2.66H 0.110 0.155 2.80 3.93J 0.014 0.025 0.36 0.64K 0.500 0.562 12.70 14.27L 0.045 0.060 1.15 1.52N 0.190 0.210 4.83 5.33Q 0.100 0.120 2.54 3.04R 0.080 0.110 2.04 2.79S 0.045 0.055 1.15 1.39T 0.235 0.255 5.97 6.47U 0.000 0.050 0.00 1.27V 0.045 --- 1.15 ---Z --- 0.080 --- 2.04

B

Q

H

Z

L

V

G

N

A

K

F

1 2 3

4

D

SEATINGPLANE-T-

CST

U

R

J

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further noticeto any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liabilityarising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. Alloperating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rightsnor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applicationsintended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. ShouldBuyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or deathassociated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an EqualOpportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATIONN. American Technical Support: 800-282-9855 Toll Free USA/CanadaEurope, Middle East and Africa Technical Support: Phone: 421 33 790 2910Japan Customer Focus Center Phone: 81-3-5773-3850

D44H/D

LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: [email protected]

ON Semiconductor Website: www.onsemi.com

Order Literature: http://www.onsemi.com/orderlit

For additional information, please contact your localSales Representative

EMX1 / UMX1N / IMX1Transistors

1/3

General purpose transistors(dual transistors)EMX1 / UMX1N / IMX1

!!!!Features1) Two 2SC2412K chips in a EMT or UMT or SMT

package.2) Mounting possible with EMT3 or UMT3 or SMT3

automatic mounting machines.3) Transistor elements are independent, eliminating interference.4) Mounting cost and area can be cut in half.

!!!!StructureEpitaxial planar typeNPN silicon transistor

!!!!Equivalent circuit

EMX1 / UMX1N IMX1(3) (2) (1)

(4) (6)(5)

Tr2

Tr1

(3) (2) (1)

(4) (6)(5)

Tr2

Tr1

The following characteristics apply to both Tr1 and Tr2.

!!!!Absolute maximum ratings (Ta = 25°C)Parameter Symbol Limits Unit

VCBO 60 V

50 V

V

VCEO

VEBO 7

IC mA150

Tj 150 ˚C

Tstg −55∼+150 ˚C

PCEMX1, UMX1N 150 (TOTAL)

mWIMX1 300 (TOTAL)

∗1

∗2

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Junction temperature

Storage temperature

Power dissipation

∗1 120mW per element must not be exceeded.∗2 200mW per element must not be exceeded.

!!!!External dimensions (Units : mm)

ROHM : EMT6

EMX1

ROHM : UMT6EIAJ : SC-88

UMX1N

Abbreviated symbol : X1



ROHM : SMT6EIAJ : SC-74

IMX1

Each lead has same dimensions



0to0

.1

( 6)

2.0

1.3

0.90.15

0.7

0.1Min.

2.1

0.65

0.2

1.25

( 1)

0.65

( 4)

( 3)

( 2)

( 5)

( 6)

( 5)

( 4)

0.3to0.6

0.15

0.3

1.1

0.8

0to0

.1

( 3)

2.8

1.6

1.9

2.90.

95

( 2)

0.95

( 1)

0.22

1.21.6

(1)

(2)(5)

(3)

(6)

(4)

0.13

0.5

0.5

0.5 1.

01.

6


2/3

!!!!Electrical characteristics (Ta = 25°C)Parameter Symbol

BVCBO

BVCEO

BVEBO

ICBO

IEBO

hFE

VCE (sat)

Cob

Min.

60

50

7

−

−

120

−

−

−

−

−

−

−

−

−

2

−

−

−

0.1

0.1

560

0.4

3.5

V IC=50µA

IC=1mA

IE=50µA

VCB=60V

VEB=7V

VCE=6V, IC=1mA

IC/IB=50mA/5mA

V

V

µA

µA

−

V

PF

Typ. Max. Unit Conditions

fT − 180 − VCE=12V, IE=−2mA, f=100MHz

VCB=12V, IE=0A, f=1MHz

MHz ∗

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Emitter cutoff current

DC current transfer ratio

Transition frequency

Collector-emitter saturation voltage

Output capacitance

!!!!Packaging specificationsPackage

Code TN T110

3000 3000

Taping

Basic ordering unit (pieces)

UMX1N

T2R

8000

EMX1

IMX1

Type

!!!!Electrical characteristic curves

00.1

0.2

0.5

2

20

50

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

1

5

10

VCE=6V

CO

LLE

CT

OR

CU

RR

EN

T :

IC (

mA

)

BASE TO EMITTER VOLTAGE : VBE (V)

Fig.1 Grounded emitter propagation characteristics

25˚C

−55˚

C

Ta=

100˚

C

0

20

40

60

80

100

0.4 0.8 1.2 1.6 2.00

CO

LLE

CT

OR

CU

RR

EN

T :

IC (

mA

)

COLLECTOR TO EMITTER VOLTAGE : VCE (V)

0.05mA

0.10mA

0.15mA

0.25mA

0.30mA

0.35mA

0.20mA

Ta=25˚C

IB=0A

0.40mA

0.50mA

0.45mA

Fig.2 Grounded emitter output characteristics ( I )

00

2

8

10

4 8 12 16

4

6

20

IB=0A

Ta=25˚C

CO

LLE

CT

OR

CU

RR

EN

T :

IC (

mA

)

COLLECTOR TO EMITTER VOLTAGE : VCE (V)

3µA

6µA

9µA

12µA

15µA

18µA

21µA

24µA

27µA

30µA

Fig.3 Grounded emitter output characteristics ( II )


3/3

0.2

20

100.5 1 2 5 10 20 50 100 200

50

100

200

500

VCE=5V3V1V

Ta=25˚C

DC

CU

RR

EN

T G

AIN

: hF

E

COLLECTOR CURRENT : IC (mA)

Fig.4 DC current gain vs. collector current ( I )

0.2 0.5 1 2 5 10 20 50 100 200

20

10

50

100

200

500

25˚C

−55˚C

Ta=100˚CVCE=5V

DC

CU

RR

EN

T G

AIN

: hF

E


Fig.5 DC current gain vs. collector current ( II )

0.2 0.5 1 2 5 10 20 50 100 2000.01

0.02

0.05

0.1

0.2

0.5

IC/IB=50

20

10

Ta=25˚C

CO

LLE

CT

OR

SA

TU

RA

TIO

N V

OLT

AG

E :

VC

E (s

at) (

V)


Fig.6 Collector-emitter saturationvoltage vs. collector current

0.2

CO

LLE

CT

OR

SA

TU

RA

TIO

N V

OLT

AG

E :

VC

E (s

at) (

V)


0.01

0.02

0.05

0.1

0.2

0.5

0.5 1 2 5 10 20 50 100 200

IC/IB=502010

Ta=25˚C

Fig.7 Collector-emitter saturation voltage vs. collector current ( I )

0.2

CO

LLE

CT

OR

SA

TU

RA

TIO

N V

OLT

AG

E :

VC

E (s

at) (

V)


0.01

0.02

0.05

0.1

0.2

0.5

0.5 1 2 5 10 20 50 100 200

IC/IB=10

Ta=100˚C25˚C

−55˚C

Fig.8 Collector-emitter saturation voltage vs. collector current ( II )

CO

LLE

CT

OR

SA

TU

RA

TIO

N V

OLT

AG

E :

VC

E (s

at) (

V)


0.2

0.01

0.02

0.05

0.1

0.2

0.5

0.5 1 2 5 10 20 50 100

IC/IB=50

Ta=100˚C25˚C

−55˚C

Fig.9 Collector-emitter saturation voltage vs. collector current ( III )

50−0.5 −1 −2 −5 −10 −20 −50 −100

100

200

500

Ta=25˚CVCE=6V

EMITTER CURRENT : IE (mA)

TR

AN

SIT

ION

FR

EQ

UE

NC

Y :

fT (

MH

z)

Fig.10 Gain bandwidth product vs. emitter current

0.2 0.5 1 2 5 10 20 50

1

2

5

10

20

Cib

Cob

COLLECTOR TO BASE VOLTAGE : VCB (V)EMITTER TO BASE VOLTAGE : VEB (V)

CO

LLE

CT

OR

OU

TP

UT

CA

PA

CIT

AN

CE

: C

ob (

pF)

EM

ITT

ER

IN

PU

T C

AP

AC

ITA

NC

E

: C

ib

(pF

)

Fig.11 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage

Ta=25˚Cf=1MHzIE=0AIC=0A

−0.2 −0.5 −1 −2 −5 −10

10

20

50

100

200

EMITTER CURRENT : IE (mA)

Fig.12 Base-collector time constant vs.emitter current

BA

SE

CO

LLE

CT

OR

TIM

E C

ON

ST

AN

T :

Cc

rbb' (p

s) Ta=25˚Cf=32MHZ

VCB=6V

that300 serie

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