the avalanche breakdown voltage of pin diode
TRANSCRIPT
The Avalanche Breakdown Voltage of PIN DiodeBy
Pathompron Jaikwang SCPY/B 6105012
Department of Physics, Faculty of Science, Mahidol University
Email : [email protected]
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The Avalanche Diode
2
PIN Diode Chip Structure
https://www.microsemi.com/sites/default/files/datasheets/Products/rf/APPENDIX%20F.pdf
The application of PIN diodes as radiation detectors in particle counting, Xโ and ฮณโray spectroscopy, medical applications and charged particle spectroscopy is presented.
. The developed models have been used to study the impact of doping concentration on the breakdown voltage
Higher breakdown voltage is the primary requirement for a detectors.
Outline
โข Introduction
โข Basic Configuration of PN diode
โข Band Diagram for a Reverse Bias Photodiode
โข Basic Configuration of PIN Diode
โข The Avalanche Breakdown Voltage
โข Experiment
โข The structure of PIN device
โข Breakdown Voltage Characteristic Equation
โข Result :The Avalanche BV Characteristic
โข Conclusion3
Introduction The Avalanche Breakdown Voltage Experiment Conclusion
Basic Configuration of PN diode
PN diode
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A pn-junction is formed when an n-type material is fused together with a p-type material creating a semiconductor diode.The total charge on each side of a p-n junction must be equal and opposite to maintain a neutral charge condition around the junction.
p-region n-region
pn-junction
https://www.electronics-tutorials.ws/diode/diode_2.html
Introduction The Avalanche Breakdown Voltage Experiment Conclusion
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depletion layer
p-region n-region
- + R
Basic Configuration of PN diode
Introduction The Avalanche Breakdown Voltage Experiment Conclusion
E
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p-region
- +
n-region
Basic Configuration of PN diode
Introduction The Avalanche Breakdown Voltage Experiment Conclusion
Band Diagram for a Reverse Bias Photodiode
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๐ธ๐ถ
๐ธ๐ถ
๐ธ๐
๐ธ๐
๐ธ๐น
๐ธ๐น
p-region depletion region n-region
Introduction The Avalanche Breakdown Voltage Experiment Conclusion
E
https://s3-us-west-2.amazonaws.com/valpont/uploads/20151124213927/Semiconductor_Device_Fundamentals1.pdf
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Basic Configuration of PIN Diode
- +
I-region
Introduction The Avalanche Breakdown Voltage Experiment Conclusion
โข The voltage is high enough to get electrons moving with enough energy.
โข when electrons collide with an atom it results in at least two electrons being left in a higher energy conduction band.
โข These electrons can themselves be accelerated enough by the applied voltage.
โข The result is the semiconductor turning into a much better conductor with a large current flow.
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The Avalanche Breakdown Voltage
Introduction The Avalanche Breakdown Voltage Experiment Conclusion
The Avalanche Breakdown Voltage
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๐ธ๐ถ
๐ธ๐
๐ธ๐น
๐ธ๐น
๐ธ๐ถ
๐ธ๐
๐๐ด -> ๐๐ต๐
Introduction The Avalanche Breakdown Voltage Experiment Conclusion
https://s3-us-west-2.amazonaws.com/valpont/uploads/20151124213927/Semiconductor_Device_Fundamentals1.pdf
The structure of PIN device
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The schematic of PIN device with doped anode and cathode regions on an SOI wafer. The anode โAโ has p-type doping and cathode โCโ has n-type doping.
shows TEM image of a PIN device on an SOI wafer.
The intrinsic region has an area of 5x60 microns. The transmission electron microscopy (TEM) image of a PIN device of 27-nm-thick intrinsic regionThe layout of 150-nm device is the same except that there is no thinning in the intrinsic region.
Introduction The Avalanche Breakdown Voltage Experiment Conclusion
B. Rajasekharan. Charge Plasma Diode - A Novel Device Concept
The structure of PIN device
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๐ธ๐ถ
๐ธ๐
๐ธ๐น
๐ธ๐น
๐ธ๐ถ
๐ธ๐
๐๐ด -> ๐๐ต๐
The avalanche breakdown voltage begins to increase for layer thicknesses of around 10-nm.
The basic idea is that a decrease in thickness of the silicon layer causes an increase concentration gradian. This further increases the voltage at which electron-hole (e-h) pairs can be formed due to impact ionization in the allowed conduction states and hence decrease an applied voltage reach to breakdown voltage.
Introduction The Avalanche Breakdown Voltage Experiment Conclusion
B. Rajasekharan. Charge Plasma Diode - A Novel Device Concept
Breakdown Voltage Characteristic Equation
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๐๐ธ ๐ฅ
๐๐ฅ= โ
๐
๐พ๐ ๐0
๐ธ ๐ฅ = โ๐๐๐ท๐พ๐ ๐0
๐ฅ๐ โ ๐ฅ
๐๐
๐๐ฅ= โ๐ธ
๐ ๐ฅ = ๐๐๐ โ๐๐๐ท2๐พ๐ ๐0
๐ฅ๐2 =
๐๐๐ด2๐พ๐ ๐0
๐ฅ๐2
๐ฅ๐๐๐ท = ๐ฅ๐๐๐ด
๐ ๐ฅ = ๐๐๐ โ ๐๐ด โ๐๐๐ท2๐พ๐ ๐0
๐ฅ๐ โ ๐ฅ 2
๐ฅ๐ = เตฑ2๐พ๐ ๐0๐
๐๐ด
เตฏ๐๐ทแบ๐๐ด + ๐๐ทแบ๐๐๐ โ ๐๐ด)
ฮค1 2
๐๐๐ =1
๐๐ธ๐ถ โ๐ฅ๐ โ ๐ธ๐ถ ๐ฅ๐
๐๐ด โ 0
๐ธ ๐ฅ =๐๐๐ท๐พ๐ ๐0
๐ฅ๐ + ๐ฅ
where
For p-side
For n-side
__(1)
__(2)
__(3)
__(4)
__(5)
__(6)
__(7)
The one dimensional Poisson equationThe by simply replacing of ๐๐๐ โ ๐๐ด
Eliminating ๐ฅ๐ in Eq.(6) using Eq.(5)
Introduction The Avalanche Breakdown Voltage Experiment Conclusion
๐พ๐ is the semiconductor dielectric constant๐0 is permittivity of free space๐ is the charge density๐๐ท is donor concentration ๐๐ด is acceptor concentration๐ฅ๐ is n side depletion region๐ฅ๐ is pside depletion region
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๐ฅ = 0
๐ธ 0 = โ๐๐๐ท๐พ๐ ๐0
๐ฅ๐ = แ2๐
๐พ๐ ๐0
๐๐ด๐๐ท
เตฏแบ๐๐ด + ๐๐ทแบ๐๐๐ โ ๐๐ด)
ฮค1 2
๐ธ 0 โ ๐ธ๐ถ๐ when ๐๐๐ โ ๐๐ด โ ๐๐๐ + ๐๐ต๐ โ ๐๐ต๐
๐ธ๐ถ๐ =2๐
๐พ๐ ๐0
๐๐ด๐๐ท
เตฏแบ๐๐ด+๐๐ท๐๐ต๐ = โ
๐๐๐ท
๐พ๐ ๐0๐ฅ๐
๐๐ต๐ โเตฏแบ๐๐ด + ๐๐ท
๐๐ด๐๐ท
Considering eq.(7) and evaluating the electric field at
making use of the fact that
Breakdown Voltage Characteristic Equation
Introduction The Avalanche Breakdown Voltage Experiment Conclusion
Result: The Avalanche BV Characteristic
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shows the reverse bias characteristics of PIN diodes for various silicon thicknesses. The inset shows that the simulated breakdown voltages are in close agreement with measurements.
Introduction The Avalanche Breakdown Voltage Experiment Conclusion
PIN diodes with doped anode and cathode regions and intrinsic region thicknesses 150-nm, 27-nm and 19-nm.
The reverse breakdown characteristics wherein the cathode/n+ region is swept from 0 to 30-V and the anode/p+ is at 0-V.
The breakdown voltage of the 150-nm thick device is around 30-V and this voltage decreases as the thickness of the intrinsic region decreases.
๐๐ต๐ โเตฏแบ๐๐ด + ๐๐ท
๐๐ด๐๐ท
B. Rajasekharan. Charge Plasma Diode - A Novel Device Concept
conclusion
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Introduction The Avalanche Breakdown Voltage Experiment Conclusion
๐ธ๐ถ
๐ธ๐
๐ธ๐น
๐ธ๐น
๐ธ๐ถ
๐ธ๐
๐๐ด -> ๐๐ต๐
- +
I-region
Reference
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โข B. Rajasekharan. Charge Plasma Diode - A Novel Device Concept. in Proceedings of the 11th annual workshop on semiconductor advances for future electronics and sensors (SAFE), Technology Foundation STW, Dec. 2008, pp. 576โ579.
โข https://s3-us-west-2.amazonaws.com/valpont/uploads/20151124213927/Semiconductor_Device_Fundamentals1.pdf
โข https://www.electronics-tutorials.ws/diode/diode_2.html
โข https://www.halbleiter.org/en/waferfabrication/doping
โข https://www.microsemi.com/sites/default/files/datasheets/Products/rf/APPENDIX%20F.pdf
โข https://byjus.com/physics/pin-diode/
Acknowledgement
โข Dr. Wittawat Yamwong
Thai Microelectronics Center (TMEC)
51/4 Moo 1 Suwintawong Road, Wangtakien,
Muang, Chachoengsao 24000, Thailand
โข Dr.Poompong Chaiwongkhot
Department of Physics, Faculty of Science,
Mahidol University, Bangkok, Thailand
โข Assistant Professor Dr. Kritsanu Tivakornsasithorn
Department of Physics, Faculty of Science,
Mahidol University, Bangkok, Thailand 18
The Avalanche Breakdown Voltage of PIN DiodeBy
Pathompron Jaikwang SCPY/B 6105012
Department of Physics, Faculty of Science, Mahidol University
Email : [email protected]
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