thermoelectric and thermal rectification properties of quantum dot junctions david m t kuo 1 and...
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Thermoelectric and thermal rectification properties of quantum dot junctions
David M T Kuo1 and Yia-Chung Chang2
1:Department of Electrical Engineering, National Central University, Taiwan
2:Research Center for Applied Science, Academic Sinica, Taiwan
The detail can be found in PRB 81, 205321 (2010)
Urbana-2003-July
References
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• [2]G. Mahan, B. Sales and J. Sharp, Physics Today,50, 42 (1997).• [3]R. Venkatasubramanian, E. Siivola,T. Colpitts,B. O'Quinn, Nature
413,597 (2001).”BiTe/SbTe quantum well superlattice”• [4]A. I. Boukai, Y. Bunimovich, J. Tahir-Kheli, J. K.Yu, W. A. Godda
rd III and J. R. Heath, Nature, 451, 168(2008).”Silicon quantum wire”
• [5]T. C. Harman, P. J. Taylor, M. P. Walsh, B. E.LaForge, Science 297, 2229 (2002).”PbSeTe Quantum dot superlattice “
• [6]K. F. Hsu,S. Loo,F. Guo,W. Chen,J. S. Dyck,C. Uher, T. Hogan,E. K. Polychroniadis,M. G. Kanatzidis, Science 303, 818(2004)
• .[7]A. Majumdar, Science 303, 777 (2004).• [8]G. Chen, M. S. Dresselhaus, G. Dresselhaus, J. P.Fleurial and T. Ca
illat, International Materials Reviews,48, 45 (2003)• [9]Y. M. Lin and M. S. Dresselhaus, Phys. Rev. B 68, 075304 (2003).
1:System
Amorphous insulator
Large intradot and interdot Coulomb interactions
1-0:Fabrication
1-1:Hamiltonian (Anderson model)
The key effects included are the intradot and interdotCoulomb interactions and the coupling between the QDs with the metallic leads
There is one energy level within each QD
1-2:Nonequilibrium Green’s function technique
Ref[1]D. M. T. Kuo and Y. C. Chang, Phys. Rev. Lett. 99,086803(2007)
Ref[2]Y. C. Chang and D. M. T Kuo, Phys. Rev. B 77,245412 (2008)
)(Lf )(Rf
2:Linear response
ZT as a function of T for different detuning energies. Solid and dash lines correspond, respectively, without and with intradot Coulomb interactions .
EF
Eg
e
eTGSZT
2
Homogenous QD size, dilute QD density
1/ 0 TT
Ref[3]P. Murphy, S. Mukerjee, J. Morre, Phys. Rev. B 78, 161406 (2008).
Fg EE RL
0, ZT
2-1:Interdot Coulomb interactions
(a) (b) (c) (d)
Side view
Top view
High QD density
(a)
(b)(c )
(d)
0, ZT
2-2: ZT detuned by Eg
Noninteraction case
Eg
EFFg EE
High QD density
2-3: Inelastic scattering effect on ZT
QD size fluctuations, defects between metallic electrodesand insulators and electron-phonon interactions,
)()(
1)( ,,
iellg
l
ielg
lrl iUE
N
iE
NG
2-4: Electrical conductance, thermal power and thermal conductance
e
eTGSZT
2
These curves correspond to Fig.3.The temperature-dependence of ZT is similar to thatof the electrical conductivity.
2-5: Ge, S and Ke as a function of gate voltage
Ge: Coulomb oscillation S: Sawtooth-like shapeKe: Sensitive to T
30
2-6:Midway between the good and poor conductors
2.7 Without vacuum layer
0,L 0,RRLt ,
2.8 Different dot sizes
2nm
2.9 Thickness of SiO2
3-1:Thermal rectification effect
TL TR TL TR
0 RL TTT0 RL TTT
Two dot case
0,, ARLA
RBLB ,,
015 TkU BAB
030 TkUU BBA
)8.())()()()(1(/
)7.()]()(2)())(21)[(1(/
eqEfEfEENQ
eqUEfEUENEfEENNQ
BRBLFBBB
ABBLRFABBABLRFBABB
1/ 0 TT
3-2: Thermal rectification efficiency(2 dots)
)0(
|)0(|)0(
TQ
TQTQQ
)0( TQ)0( TQ
TL TR TLTR
0,, ARLA
RBLB ,,
030 TkUU BBA
015 TkU BAB
Ref[4] R. Scheiber et al, New. J. Phys. 10, 083016 (2008)
3-3: Thermal rectification (three QDs)
Dot A
015 TkUU BACAB
08 TkU BBC
40FA EE
80FB EE
120FC EE
3-4:The shift of QD energy levels caused by electrochemical potential
TH TLTHTL
VHVLVH VL
TkU BBC 10
Solid curves includingDashed curves excluding
T
VS
3-5: Interdot Coulomb interactions
Solid line UAC=15kBT0
Dashed line UAC=10kBT0
Dotted line UAC=5kBT0
Dot-Dashed line UAC=0
3-6: Thermal rectification efficiency2 dots3 dots
4:Conclusion
(A) Figure of merit, ZT[1]The optimization of ZT depends not only on the temperature but a
lso on the detuning energy [2]Inelastic scattering effect of electron-phonon interactions, QD size
fluctuations, and defects lead to a considerable reduction to the ZT values
(B)Thermal rectification [1] Very strong asymmetrical coupling between the dots and the elect
rodes. [2] Large energy level separation between dots
[3]Strong interdot Coulomb interactions
Fg EE
4. Thermal rectification
4.1 Tunneling rates
0 RL VVV
TH TLTH
TL
0 RL VVV
4.2 Tuning energy level
4.3 Three-dots with uniform size
)0(
)0(
TQ
TQQ The dot-dashed line indicates the junction
system without asymmetrical heat current,when dots are identical.
4.4: Different sizes
)0(
)0(
TQ
TQQ
120
80
40
FC
FB
FA
EE
EE
EE
|)30(|
)30(
TQ
TQCa
)20(
)20(
TQ
TQCb
4.5 :Gate voltage
50geV 60geV 70geV
4.6: Interdot Coulomb interactions
4.7:Energy level shifted by electrochemical potential
5:A single molecular QD
(a)Hard to scaling up the thermal devices.(b)Hard to integrate with silicon based electronics.
[1]P. Murphy, S.Mukerjee and J. Morre, Phys. Rev. B 78, 161406 (2008).
5.1: )()(),( TandTSTG ee
5.2:Detuning energy
Fd EE
5.3: )()(),( TandTSTG ee
5.4
5.5
5.6:
5.7: S to resolve high order phonon assisted tunneling