thin film gas sensors

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Thin Film Gas Sensors Thin Film Gas Sensors Mohammad F. Al Mohammad F. Al - - Kuhaili Kuhaili Physics Department Physics Department KFUPM KFUPM October 2003 October 2003

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Page 1: Thin Film Gas Sensors

Thin Film Gas SensorsThin Film Gas Sensors

Mohammad F. AlMohammad F. Al--KuhailiKuhailiPhysics Department Physics Department –– KFUPM KFUPM

October 2003October 2003

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Part I : Sensors

Part II : Thin Film Gas Sensors

Part III : TFGS Research at CAPS

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Part I

Sensors terminology & specifications

Sensor materials

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SENSORS

TERMINOLOGY

&

SPECIFICATIONS

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SENSOR TERMINOLOGY

Sensor: a device that detects or measures a physical quantity. Usually the output of a sensor is an electrical signal.

Actuator: a device which converts a signal (usually electrical) to some action (usually mechanical)

Transducer: a device that converts energy from one form into another

Sensors and actuators are forms of transducers.

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sensor actuator

operator input

power source

signalprocessor

input output

Inpu

t for

m o

f ene

rgy

signal signal

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Types of Sensors

Active Sensor: one that can generate a signal without the need for any external power supply (photovoltaic cell).

Passive Sensor: needs an external source of energy (electrical).

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The forms of energy involved in the sensing operation can be conveniently divided into six categories:

Chemical (concentration, reaction rate)

Electrical (current, voltage, resistance)

Magnetic (moment, permeability)

Mechanical (position, force, stress)

Radiant (energy, phase, polarization)

Thermal (heat, temperature)

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Sensor Requirements

Low cost

Structurally & chemically reliable

Selectivity

Sensitivity

Ruggedness

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Sensed QuantitiesStrain & pressure

Position, direction, distance & motion

Light & associated radiation

Temperature

Sound, infrasound & ultrasound

Liquids & gases

Environment (moisture, acidity, radioactivity, pollution)

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SENSOR

MATERIALS

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MetalsMetals consist of fixed ion cores surrounded by a sea of free electrons (free electron gas).

They have closed-packed structures.

They have the following properties:

• High electrical conductivity

• High thermal conductivity

• High strength

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Applications

Thermal expansion devices

Shape memory alloys

Thermocouples

Strain gauges

Catalysts

Electrodes (interface to sensing elements)

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Semiconductors

Semiconductors are characterized by :

A bandgap in their band structure

Have two types of charge carriers

Can be doped

Can form rectifying or ohmic contacts

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This leads to :

Ability to control their conductivity

Ability to modify their structures

Ability of semiconductors to respond to light

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Applications

Thermistors

Optical detection

Gas-sensitive resistors

Charge-coupled devices

Position and displacement sensors

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DielectricsHave high electrical resistivity

Can be polarized in an electric field

Dielectrics include the following classes:

• Piezoelectric materials: strain – electric field

• Pyroelectric materials: temperature gradient –electric field

• Ferroelectric materials

Examples: Quartz – PZT – Polymers

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Applications

• Crystal oscillators• Radiation detection• Vibration monitors• Air bags• Intrusion alarms• ABS in cars• Fuel level monitor• Leak detection• Optical shutters

• NDT• Particle size dist.• Large area display• Ultrasonic imaging• Airport control• Earthquake detection• Touch panels• Thermography• Motion detection

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Magnetic MaterialsClasses of magnetic materials:

• Diamagnetic materials

• Paramagnetic materials

• Ferromagnetic materials

• Antiferromagnetic materials

• Ferrimagnetic materials

• Superconductors

These materials respond differently to an external magnetic field.

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Applications

Position & movement sensors

Coded sensors (credit cards, smart cards)

Hall effect sensors

SQUIDS: measurement of extremely small magnetic fields (human brain)

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Other Materials

Radiant materials (IR detection)

Solid electrolytes

Optical fiber sensor materials

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PART II

TFGS

Sensing Mechanism

Sensor Variables

Sensor Parameters

Advantages

Applications

Problems & Limitations

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THIN

FILM

GAS

SENSORS

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Thin Film Gas Sensors

Thin films of a semiconductor metal oxide (e.g. SnO2) show a substantial conductivity change when only small concentrations of combustible gases (e.g. CO) are present in a large excess of oxygen (e.g. air).

The conductance is controlled by surface processes.

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There is a large number of semi-conducting metal oxides sensitive to gas composition in this way.

These include SnO2 , ZnO , WO3 , Fe2O3 , TiO2 , In2O3 and Ga2O3.

These films are sensitive to a range of combustible gases (H2 , CO , and CH4).

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SENSING

MECHANISM

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Metal – Semiconductor Junctions

Consider the contact between an n-type semiconductor and a metal where χ < Φm

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When equilibrium is reached, the band diagram looks like

There will be a barrier to electron flow from semiconductor to metal of magnitude:

ΦSB = Φm – χ { Schottky barrier }

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Additionally, there will be a built-in potential of

magnitude:

eVo = ΦSB – EFSC

Forward bias increases S – M current (reduce eVo)

Reverse bias decreases S – M current (increase eVo)

M – S current is the same (reverse saturation current)

Such a junction behaves as a diode (rectifying)

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Behavior of Gas Sensors

Many sensors are made from polycrystalline materials made up of grains.

Unmodified SnO2 is oxygen-deficient and, consequently, is an n-type semiconductor.

The I – V characteristics of SnO2 sensors have shown that the conductivity is determined by a Schottky barrier mechanism.

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?This is figure 4.10 in Sensor Materials.However, the correct figure is by McAleer, see page 124 of Solid State Gas Sensors for reference.

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Oxygen adsorbed on the oxide surface (grain boundaries) can remove an electron from the semiconductor to from either (O2)-

or O-, so reducing the # of current carriers (oxygen is a surface trap for electrons).

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Since the electrons are drawn from ionized donors via the CB, the charge carrier density at the interface is reduced.Therefore, an energy barrier to charge transport ∆E (eVo) is developed

See figure 4 of N. Barsan: J.Phys C Review

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As the surface charge grows, the adsorption of further oxygen is inhibited.

At the junction between the grains of the solid, the depletion layer and associated potential barrier make for high resistance.

This can be considered as a back-to back Scottky diode.

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Reducing gases (e.g. CO) may then react with the oxygen ions according to reactions such as:(O2)– + 2 CO = 2 CO2 + e–

As a result, the charge carrier density in the n-type semiconductor is replenished (increasing the conductivity) and the height of the Schottky barrier (eVo) reduced.

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SENSOR

VARIABLES

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SENSOR VARIABLES

1. Sensor material

2. Temperature

3. Analyte gases (composition & concentration)

The major factors affecting the operation of a semiconductor gas sensor are:

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Sensor Material

Choice of the material: physical & chemical properties of the sensor

Method of preparation

Crystallinity (single crystal / polycrystalline/ orientation / porosity)

Additives (dopants / catalysts)

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Temperature

The gases are discriminated by causing a maximum response at different temperatures.

Maximum sensitivity occurs at different temperatures for different gases and different oxides.

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SENSOR

PARAMETERS

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SENSOR PARAMETERS

1. Conductance2. Base line3. Selectivity & Sensitivity4. Calibration curve5. Response time6. Sensor geometry7. Reproducibility8. Spread of variables

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1. ConductanceConductance = reciprocal of resistance

All the operating characteristics of the sensor are derived from this one measurement

2. Base lineConductance in clean dry air, or humid air of controlled humidity

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3. Sensitivity and selectivityS = {[σ (gas) – σ (air)]/ σ (air)} x 100

For a given sensor , Smax and the temperature at which Smax occurs are gas-dependent.

This can be used as the basis for selectivity of a certain gas among a mixture of gases.

Selectivity = sensitivity of gas 1/ sensitivity of gas 2 , for equivalent concentrations of both gases.

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4. Calibration curve

- Sensitivity plotted as a function of the concentration.

- The temperature may be set at the value of Smax.

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5. Response Time

The time required to achieve (90 % , 70 % or

50 %) of the final change in conductance

following a step change in gas concentration.

Response times are very temperature-dependent (shorter for higher T).

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6. Sensor Geometry

The sensor geometry affects the response of the sensor.

The choice of electrodes affects the S-M barrier height.

The placement of the electrodes affects the characteristic reaction depth.

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7. Reproducibility

The ability of the sensor to reproduce readings when the same environment is applied to it consecutively under the same conditions.

Sensors are dependent on surface chemical effects which are notoriously irreproducible.

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Therefore, the time history of the sensor can severely limit its function.

This effect could be attributed to the adsorption of species on the surface which are not easily desorbed.

Fortunately, for this case, the differences at T > 400 oC are small, and the optimum T (Smax) is 400 – 450 oC.

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8. Spread of VariablesThe range of variables taken by a certain parameter (e.g. conductance) for different sensors

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Effects of CatalystsCatalysts alter the rate at which chemical

reactions reach equilibrium without themselves

undergoing any permanent chemical change.

Precious metals (Pt & Pd) can modify the

response of TFGS (catalysts).

The effect of the metal catalyst is different for

different gases.

Example: (SnO2 + Pt) CO gas sensor

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•SnO2 gas sensor•Pulses of CO gas (15 min)•Dotted line = dry air•Ti = 600 oC (dashed line)•Horizontal = time•Vertical = resistivity

•Same as above but with a Pt catalyst•Resistivity decreases below 150 oC•Size of the response increases as T decreases•The response becomes positive (resistivity increase for higher temperature

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The mechanism here is similar to the formation of Schottky barriers from the oxygen surface states except that the charge withdrawal is now due to the high Φm.

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Electrons are transferred from CO to Pt, thus reducing the Schottky barrier height and resistivity.

Therefore, SnO2 is less prone to changes in the moisture content of the atmosphere.

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Effect of Humidity

Semiconductor gas sensors are sensitive to water vapor and their response to combustible gases is affected by the ambient humidity.Chemisorption of water introduces surface electron states.The effect of water vapor is the increase of surface conductance and the effect is reversible.The effects of water vapor could most certainly account for some of the aging and irreproducibility in practical devices.

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ADVANTAGES

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ADVANTAGES

Large selection of materials and variables

Possibility of material engineering

Measurable response

Ruggedness – harsh environments

Potential for miniaturization

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APPLICATIONS

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APPLICATIONS

Automobile engine management – O2

Industrial boiler & furnace control – O2

Refrigerated food storage – NH3

Oil rigs – hydrocarbons & H2S

Domestic gas alarms – hydrocarbons

Steel industry – CO & O2

Chemical industry - hydrocarbons

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PROBLEMS

&

LIMITATIONS

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PROBLEMS & LIMITATIONS1. Poor understanding of surface & interface chemistry

2. Poor selectivity

3. Temperature instability: turbulent flow

4. Very high (PPB) sensitivity for certain gases

5. Adsorption and desorption of chemical species (long-term effects)

6. Irreproducibility

7. Environmental degradation

8. Water vapor

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Typical Gas Sensors

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See figure 2 of N. Barsan: J.Phys C Review

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PART III

Research on TFGS at CAPS

Some recent results

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RESEARCH

on

TFGSat

CAPS

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Recently established research on TFGS

Members:• S. M. A. Durrani• E. E. Khawaja• M. F. Al-Kuhaili• E. Bakhtiari

Task: Detection of CO using SnO2

SABIC Project

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THE EXPERIMENTAL SYSTEM

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Materials : SnO2 , Ga2O3 , HfO2

Different growth conditions:

• Oxygen partial pressure

• Substrate temperature

• Annealing: temperature & atmosphere

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Different electrode materials & geometries

Base line measurement

Different experimental parameters

Different gases

Characterization techniques:• Optical• XRD• XPS

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REFERENCES

• P T Moseley and A J Crocker, Sensor Materials, IOPP 1996.

• P T Moseley and B C Tofield editors, Solid State Gas Sensors, Adams Hilger 1987.

• I Sinclair, Sensors and Transducers, Newnes 2001.

• D Kohl, J. Phys. D 34 (2001) R125-R149.• N Barsan and U Weimar, J. Phys.: Condens.

Matter 15 (2003) R813-R839.