thinning 8” wafers to 50 µ m
DESCRIPTION
Thinning 8” wafers to 50 µ m. Development with commercial supplier for wafer services First trial to thin blank 8” silicon wafers to 50 microns 13 wafers successfully thinned to 50 microns and diced in various die sizes: 15 mm x 30 mm (basic size) and multiples of it - PowerPoint PPT PresentationTRANSCRIPT
Thinning 8” wafers to 50 µm
Development with commercial supplier for wafer services
First trial to thin blank 8” silicon wafers to 50 microns
13 wafers successfully thinned to 50 microns and diced in various die sizes: 15 mm x 30 mm (basic size) and
multiples of it Used for dummy module
construction Next step: thinning of patterned
8” wafers (daisy chain structure for electrical connection tests) to be completed by end May 2012
1
15 mm x 60 mm silicon die (50 µm thick)
13 wafers delivered on dicing tape
Tape release is critical step
6 cm x 1.5 cm silicon, 50 um thick
Next steps – Rockwood thinning Sent 8 wafers back to Rockwood to be removed
from tape with pick-and-place machine ~70 pieces 15 mm x 30 mm and ~ 24 pieces 15
mm x 60 mm available Prepare for building dummy modules as discussed
with WG4 (mechanics, bus cables, glue) Prepare layout for “intelligent dummies” (Antoine) Purchase blanks (specs as Tower/Jazz wafers
without epi layer) DBG (dice before grinding) will used for next
thinning trials.
Hybrid Dummies First assemblies delivered from IZM 8 single chip assemblies 2 ALICE type ladders
Chip thickness: 50 um Sensor thickness: 100 um ALICE pixels 50 um x 425 um
Next steps - IZM Measure thickness of elements (SEM,
metrology) Invesitgate bow of assemblies (though
no real components!) Send for 3D X-ray one assembly Few more assemblies in pipeline at IZM