tl1451a-ep dual pulse-width-modulation control circuits

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FEATURES

1

2

3

4

5

6

7

8

16

15

14

13

12

11

10

9

CTRT

Error 1IN+Amplifier 1 1IN−

1FEEDBACK1DTC1OUTGND

REFSCP2IN+ Error2IN− Amplifier 22FEEDBACK2DTC2OUTVCC

D PACKAGE(TOP VIEW)

DESCRIPTION/ORDERING INFORMATION

TL1451A-EPDUAL PULSE-WIDTH-MODULATION CONTROL CIRCUITS

SLVS614–DECEMBER 2005

• Controlled Baseline • Variable Dead Time Provides Control OverTotal Range– One Assembly/Test Site, One Fabrication

Site • Internal Regulator Provides a Stable 2.5-VReference Supply• Enhanced Diminishing Manufacturing

Sources (DMS) Support• Enhanced Product-Change Notification• Qualification Pedigree (1)

• Complete Pulse-Width Modulation (PWM)Power-Control Circuitry

• Completely Synchronized Operation• Internal Undervoltage Lockout Protection• Wide Supply-Voltage Range• Internal Short-Circuit Protection• Oscillator Frequency . . . 500 kHz Max(1) Component qualification in accordance with JEDEC and

industry standards to ensure reliable operation over anextended temperature range. This includes, but is not limitedto, Highly Accelerated Stress Test (HAST) or biased 85/85,temperature cycle, autoclave or unbiased HAST,electromigration, bond intermetallic life, and mold compoundlife. Such qualification testing should not be viewed asjustifying use of this component beyond specifiedperformance and environmental limits.

The TL1451A-EP incorporates on a single monolithic chip all the functions required in the construction of twopulse-width modulation (PWM) control circuits. Designed primarily for power-supply control, the TL1451A-EPcontains an on-chip 2.5-V regulator, two error amplifiers, an adjustable oscillator, two dead-time comparators,undervoltage lockout circuitry, and dual common-emitter output transistor circuits.

The uncommitted output transistors provide common-emitter output capability for each controller. The internalamplifiers exhibit a common-mode voltage range from 1.04 V to 1.45 V. The dead-time control (DTC) comparatorhas no offset unless externally altered and can provide 0% to 100% dead time. The on-chip oscillator can beoperated by terminating RT and CT. During low VCC conditions, the undervoltage lockout control circuit featurelocks the outputs off until the internal circuitry is operational.

The TL1451A-EP is characterized for operation from –55°C to 125°C.

ORDERING INFORMATION

TA PACKAGE (1) ORDERABLE PART NUMBER TOP-SIDE MARKING

–55°C to 125°C SOIC – D Tape and reel TL1451AMDREP TL1451EPG4

(1) Package drawings, standard packing quantities, thermal data, symbolization, and PCB design guidelines are available atwww.ti.com/sc/package.

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of TexasInstruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

PRODUCTION DATA information is current as of publication date. Copyright © 2005, Texas Instruments IncorporatedProducts conform to specifications per the terms of the Texas On products compliant to MIL-PRF-38535, all parameters areInstruments standard warranty. Production processing does not tested unless otherwise noted. On all other products, productionnecessarily include testing of all parameters. processing does not necessarily include testing of all parameters.

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+

−

+

−

Oscillator

ReferenceVoltage

1/2 Vref

R

S

170 kΩ UVLO

R

9 2 1

VCC RT CT

10

16

7

8

REF

GND

PWMCOMP

PWMComparator

12 kΩ

11

14

13

12

5

15

3

4

6

2DTC

2IN+

2IN−

2 FEEDBACK

1 FEEDBACK

SCP

1IN+

1IN−

1DTC

ErrorAmplifier 2

ErrorAmplifier 1 1OUT

2OUT

COMPONENT COUNT

Resistors

Capacitors

TransistorsJFETs

65

8

10518

Absolute Maximum Ratings (1)

TL1451A-EPDUAL PULSE-WIDTH-MODULATION CONTROL CIRCUITSSLVS614–DECEMBER 2005

FUNCTIONAL BLOCK DIAGRAM

over operating free-air temperature range

MIN MAX UNIT

VCC Supply voltage 51 V

VI Amplifier input voltage 20 V

VO Collector output voltage 51 V

IO Collector output current 21 mA

Continuous power total dissipation See Dissipation Rating Table

TA Operating free-air temperature range M suffix –55 125 °C

Tstg Storage temperature range –65 150 °C

Lead temperature 1,6 mm (1/16 in) from case for 10 s 260 °C

(1) Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratingsonly, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operatingconditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

2

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Recommended Operating Conditions

Reference Section Electrical Characteristics



Dissipation Ratings

TA ≤ 25°C DERATING FACTOR TA = 70°C TA = 85°C TA = 125°CPACKAGE POWER RATING ABOVE TA = 25°C POWER RATING POWER RATING POWER RATING

D 1088 mW 8.7 mW/°C 696 mW 566 mW 218 mW

MIN MAX UNIT

VCC Supply voltage 3.6 50 V

VI Amplifier input voltage 1.05 1.45 V

VO Collector output voltage 50 V

IO Collector output current 20 mA

Current into feedback terminal 45 µA

RF Feedback resistor 100 kΩ

CT Timing capacitor 150 15000 pF

RT Timing resistor 5.1 100 kΩ

Oscillator frequency 1 500 kHz

TA Operating free-air temperature M suffix –55 125 °C

over recommended operating free-air temperature range, VCC = 6 V, f = 200 kHz (unless otherwise noted)

PARAMETER TEST CONDITIONS MIN TYP (1) MAX UNIT

TA = 25°C 2.4 2.5 2.6Output voltage (pin 16) IO = 1 mA V

TA = MIN and 125°C 2.35 2.46 2.65

Output voltage change with temperature –0.63% ±4% (2)

TA = 25°C 2 12.5

Input voltage regulation VCC = 3.6 V to 40 V TA = 125°C 0.7 15 mV

TA = MIN 0.3 30

TA = 25°C 1 7.5

Output voltage regulation IO = 0.1 mA to 1 mA TA = 125°C 0.3 14 mV

TA = MIN 0.3 20

Short-circuit output current VO = 0 3 10 30 mA

(1) All typical values are at TA = 25°C, unless otherwise indicated.(2) These parameters are not production tested.

3

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Undervoltage Lockout Section Electrical Characteristics

Short-Circuit Protection Control Section Electrical Characteristics

Oscillator Section Electrical Characteristics




TA = 25°C 2.72

Upper threshold voltage (VCC) TA = 125°C 1.7 V

TA = MIN 3.15

TA = 25°C 2.6

Lower threshold voltage (VCC) TA = 125°C 1.65 V

TA = MIN 3.09

TA = 25°C 80 120

Hysteresis (VCC) TA = 125°C 10 50 mV

TA = MIN 10 60

TA = 25°C 1.5

Reset threshold voltage (VCC) TA = 125°C 0.95 V

TA = MIN 1.5

(1) All typical values are at TA = 25°C, unless otherwise indicated.



TA = 25°C 650 700 750

Input threshold voltage (SCP) TA = 125°C 400 478 650 mV

TA = MIN 800 880 950

Standby voltage (SCP) 140 185 230 mV

TA = 25°C 60 120

Latched input voltage (SCP) TA = 125°C 70 120 mV

TA = MIN 60 120

Equivalent timing resistance 170 kΩ

Comparator threshold voltage (FEEDBACK) 1.18 V




TA = 25°C 200CT = 330 pF,Frequency TA = 125°C 195 kHzRT = 10 kΩ

TA = MIN 193

Standard deviation of frequency CT = 330 pF, RT = 10 kΩ 2%

TA = 25°C 1%

Frequency change with voltage VCC = 3.6 V to 40 V TA = 125°C 1%

TA = MIN 3%

Frequency change with temperature 1.37% ±10% (2)


4

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Dead-Time Control Section Electrical Characteristics

Error-Amplifier Section Electrical Characteristics





TA = 25°C 1Input bias current (DTC) µA

TA = MIN and 125°C 3

Latch mode (source) current (DTC) –80 –145 µA

TA = 25°C 2.3

Latched input voltage (DTC) TA = 125°C 2.22 2.32 V

TA = MIN 2.28 2.4

Zero duty cycle 2.05 2.25 (2)

Input threshold voltage at f = 10 kHz (DTC) VMaximum duty cycle 1.2 (2) 1.45




TA = 25°C ±7

Input offset voltage VO (FEEDBACK) = 1.25 V TA = 125°C ±10 mV

TA = MIN ±12

TA = 25°C ±100

Input offset current VO (FEEDBACK) = 1.25 V TA = 125°C ±100 nA

TA = MIN ±200

TA = 25°C 160 500

Input bias current VO (FEEDBACK) = 1.25 V TA = 125°C 100 500 nA

TA = MIN 142 700

Common-mode input voltage range VCC = 3.6 V to 40 V 1.05 to 1.45 V

TA = 25°C 70 80

Open-loop voltage amplification RF = 200 kΩ TA = 125°C 70 80 dB

TA = MIN 64 80

Unity-gain bandwidth 1.5 MHz

Common-mode rejection ratio 60 80 dB

Positive output voltage swing 2 V

Negative output voltage swing 1 V

TA = 25°C 0.5 1.6

Output (sink) current (FEEDBACK) VID = –0.1 V, VO = 1.25 V TA = 125°C 0.4 1.8 mA

TA = MIN 0.3 1.7

TA = 25°C –45 –70

Output (source) current (FEEDBACK) VID = 0.1 V, VO = 1.25 V TA = 125°C –25 –50 µA

TA = MIN –15 –70


5

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Output Section Electrical Characteristics

PWM Comparator Section Electrical Characteristics

Total Device Electrical Characteristics




Collector off-state current VO = 50 V 10 µA

TA = 25°C 1.2 2

Output saturation voltage TA = 125°C 1.6 2.4 V

TA = MIN 1.36 2.2

Short-circuit output current VO = 6 V 90 mA




Zero duty cycle 2.05 2.25 (2)

Input threshold voltage at f = 10 kHz (FEEDBACK) VMaximum duty cycle 1.2 (2) 1.45




Standby supply current Off-state 1.3 1.8 mA

Average supply current RT = 10 kΩ 1.7 2.4 mA


6

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PARAMETER MEASUREMENT INFORMATION

87654321

910111213141516

S1

CPE 0.47 µF

TestInput VCC = 5 V

RL

4.7 kΩ

4.7 kΩ

RL

OUT1

OUT2

CT330 pF

RT10 kΩ

TestInput

TL1451A-EP

Dead Time 100%

tpe(1)

2.0 V1.6 V1.4 V1.25 VH

L

H

L

0.6 V

0 V

H

L

3.6 V

0 V

Oscillator Triangle Waveform

Error-Amplifier OutputDead-Time Input VoltageShort-Circuit Protection

Comparator Input VoltagePWM Comparator Output Voltage

Output Transistor CollectorWaveform

Protection EnableTerminal Waveform

Short-Circuit ProtectionComparator Output

Power-Supply Voltage

(1) Protection enable time, tpe = (0.051 x 106 x Cpe) in seconds

2.8 V TYP



Figure 1. Test Circuit

Figure 2. TL1451A-EP Timing

7

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TYPICAL CHARACTERISTICS

0

10

20

30

40

50

60

70

105 115 125 135 145

Continous Tj – °C

Yea

rs E

stim

ated

Life

100 k

10 k

1 k

1 M

1 k 4 k 10 k 40 k 100 k 400 k 1 M

CT = 150 pF

CT = 1500 pF

CT = 15000 pF

VCC = 5 VTA = 25°C

RT − Timing Resistance − Ω

fosc

− T

rian

gle

Osc

illat

or

Fre

qu

ency

− H

zo

scf

0

−1

−2

−3−25 0 25 50

afo

sc −

Osc

illat

or

Fre

qu

ency

Var

iatio

n −

%

1

2

3

75 100

VCC = 3.6 VRT = 10 kΩCT = 330 pFfosc = 200 kHz

TA − Free-Air Temperature − °C

osc

f ∆


Figure 3. Estimated Deviced Life at Elevated Temperatures for Wirebond Voiding Fail Mode

Figure 4. Triangle Oscillator Frequency Figure 5. Oscillator Frequency Variationvs Timing Resistance vs Free-Air Temperature

8

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Tria

ng

le W

avef

orm

Per

iod

− u

S

VCC = 5 VRT = 5.1 kΩTA = 25°C

sµ

102

101

100

10−1

101 102 103 104 105

CT − Timing Capacitance − pF

2.2

2

1.6

1.4

0.8

2.6

1.8

Tria

ng

le W

avef

orm

Sw

ing

Vo

ltag

e −

V

2.4

1.2

1

VCC = 5 VRT = 5.1 kΩTA = 25°C

CT − Timing Capacitance − pF101 102 103 104 105

0

−10

− 20

− 30− 25 0 25 50

10

20

30

75 100

VCC = 3.6 VII(ref) = 1 mA


avre

f − R

efer

ence

Ou

tpu

t Vo

ltag

e V

aria

tion

− m

V

V O

(ref

)∆

0

−10

− 20

− 30− 25 0 25 50

10

20

30

75 100

VCC = 40 VII(ref) = 1 mA


avre

f − R

efer

ence

Ou

tpu

t Vo

ltag

e V

aria

tion

− m

V

V O

(ref

)∆



TYPICAL CHARACTERISTICS (continued)

Figure 6. Trangle Waveform Swing Voltage Figure 7. Triangle Waveform Periodvs Timing Capacitance vs Timing Capacitance

Figure 8. Reference Output Voltage Variation Figure 9. Reference Output Voltage Variationvs Free-Air Temperature vs Free-Air Temperature

9

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1.5

1

0.5

00 5 10 15 20 25

2

2.5

3

30 35 40

TA = 25°C

VCC − Supply Voltage − V

Vre

f − R

efer

ence

Ou

tpu

t Vo

ltag

e −

V

VO

(ref

)

0.8

0.7

0.6

− 25 0 25 50

Dro

po

ut

Vo

ltag

e V

aria

tion

− V

0.9

1

1.1

75 100TA − Free-Air Temperature − °C

II(ref) = 1 mA

2

−25 0 25 50

Un

der

volta

ge

Lo

cko

ut T

hre

sho

ld V

olta

ge

− V

2.5

3

3.5

75 100

Threshold Voltage −VTH(Left Scale)

Threshold Voltage −VTL(Left Scale)

Hysteresis Voltage(Right Scale)

300

200

100

0

Un

der

volta

ge

Lo

cko

ut H

yste

rsis

Vo

ltag

e −

mV


3.25

2.75

2.25 50

150

250

3

2

1

00 1 2 3

VC

E −

Ou

tpu

t Co

llect

or

Vo

ltag

e −

V

4

5

6

4 5

TA = 25°CTA = −20°C

IO = 10 mA

7,10

8

RL

5 V

I = IOVDE

TA = 85°C


VC

E



Figure 10. Reference Output Voltage Figure 11. Dropout Voltage Variationvs Supply Voltage vs Free-air Temperature

Figure 12. Undervoltage Lockout Hysteresis Figure 13. Undervoltage Lockout CharacteristicsCharacteristics

10

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1.20

1.15

1.10− 25 0 25

Co

mp

arat

or

Th

resh

old

Vo

ltag

e −

V

1.25

1.30

50 75 100

Short-Circuit ProtectionLatch Reset Supply Voltage(Right Scale)

Short-Circuit ProtectionComparator Threshold Voltage(Left Scale)

3

2.5

2

1.5

1

RS

− L

atch

Res

et S

up

ply

Vo

ltag

e −

V


9

6

3

00 50 100 150

tpe

− P

rote

ctio

n E

nab

le T

ime

− s

12

15

18

200 250

t pe

CPE − Protection Enable Capacitance − µF

+

−

ProtectionLatch

S RCPE U.V.L.O.ERROR AMP 1

ERROR AMP 2

1.25 V

Short-circuitProtection

Comparator12 kΩ

15 16

SCP Vref

170 kΩ Vref Vref




Figure 14. Short-Circuit Protection Characteristics

Figure 15. Protection Enable Time vs Protection Enable Capacitance

11

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1.75

1.5

1

0.75

0

2.25

1.25

1 k 10 k 100 k 1 M 10 M

Err

or

Am

p M

axim

um

Ou

tpu

t Vo

ltag

e S

win

g −

V

2

f − Frequency − Hz

0.5

0.25

VCC = 5 VTA = 25°C

70

60

40

30

0

90

50

100 1 k 10 k 100 k 1 M 2 M

Op

en-L

oo

p V

olta

ge

Am

plif

icat

ion

− d

B

80


20

10

VCC = 5 VTA = 25°C

−5

−201 k 10 k 100 k

G −

Gai

n −

dB


10

1 M 10 M

5

0

−10

−15

VCC = 5 VTA = 25°C



Figure 16. Error Amplifier Maximum Output Voltage Figure 17. Open-Loop Voltage AmplificationSwing vs Frequency vs Frequency

Figure 18. Gain(Amplifier in Unity-Gain Configuration vs Frequency)

12

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47 pF470 pF4700 pF

CX:

Phase Shift(Right Scale)

Closed-Loop Gain(Left Scale)

VCC = 5 VRref = 150 ΩCref = 470 pFTA = 25°C

50

30

20

0

70

40

100 1 k 10 k 100 k 1 M

Clo

sed

-Lo

op

Gai

n −

dB

60


10

0°

−10°−20°

−30°−40°

−50°

−60°

−70°

−80°−90°

Ph

ase

Sh

ift

Cx Rref

Cref

Vref

39 kΩ

39 kΩ

+

−

Test Circuit




Figure 19. Closed-Loop Gain and Phase Shift vs Frequency

13

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47 pF470 pF4700 pF

CX:




50

30

20

0

70

40

100 1 k 10 k 100 k 1 M

Clo

sed

-Lo

op

Gai

n −

dB

60


10

0°

−10°−20°

−30°−40°

−50°

−60°

−70°

−80°−90°

Ph

ase

Sh

ift

Cx Rref

Cref

Vref

39 kΩ

39 kΩ

+

−

Test Circuit



Figure 20. Closed-Loop Gain and Phase Shift vs Freqency

14

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47 pF470 pF4700 pF

CX:

Phase Shift(Right Scale)Closed-Loop Gain

(Left Scale)


50

30

20

0

70

40

100 1 k 10 k 100 k 1 M

Clo

sed

-Lo

op

Gai

n −

dB

60


10

0°

−10°−20°

−30°−40°

−50°

−60°

−70°

−80°−90°

Ph

ase

Sh

ift

Cx Rref

Cref

Vref

39 kΩ

39 kΩ

+

−

Test Circuit





15

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VCC = 5 VCref = 470 pFTA = 25°C

50

30

20

0

70

40

100 1 k 10 k 100 k 1 M

Clo

sed

-Lo

op

Gai

n −

dB

60


10

0°

−10°−20°

−30°−40°

−50°

−60°

−70°

−80°−90°

Ph

ase

Sh

ift

Cref

Vref

39 kΩ

39 kΩ

+

−

Test Circuit

60

40

20

00 5 10

Ou

tpu

t Sin

k C

urr

ent −

mA

80

100

Collector Output Saturation Voltage − V

120

15 20

110

90

70

50

30

10

TA = −20°C

TA = 25°C

VCC = 3.6 V

TA = 85°C




Figure 23. Output Sink Current vs Collector Output Saturation Voltage

16

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VO(ref) −0.01

VO(ref) −0.02

VO(ref) −0.03

VO(ref) −0.04

VO(ref) −0.05

VO(ref) −0.06

VO(ref) −0.07

1

0.9

0.8

0.7

0.6

0.5

−25 0 25 50 75 100TA − Free-Air Temperature − °C

Maximum Output VoltageSwing (Right Scale)

Maximum OutputVoltage Swing (Right Scale)

+

−RL

100 kΩVvom − 1

33 kΩ

33 kΩ

VCC = 3.6 VRL = 100 kΩVOM+1 = 1.25 VVOM −1 = 1.15 V (Right Scale)VOM −1 = 1.35 V (Left Scale)

Vref

TEST CIRCUIT

− M

axim

um

Ou

tpu

t Vo

ltag

e S

win

g −

VV

OM

− M

axim

um

Ou

tpu

t Vo

ltag

e S

win

g −

VV

OM

1

0.5

00 10 20

ICC

(Sta

nd

by)

− S

tan

db

y C

urr

ent −

mA

2

30 40

1.5

CC

I


TA = 25°C

1.75

1.25

0.75

0.25

50

60

90

1000 0.5 1 1.5 2 2.5 3

Ou

tpu

t Tr

ansi

sto

r O

n D

uty

Cyc

le −

%

30

10

Dead-Time Input Voltage − V

0

3.5 4

70

20

40

80

VCC = 3.6 VRT = 10kΩCT = 330 pF




Figure 24. Maximum Output Voltage Swing vs Free-Air Temperature

Figure 25. Output Transistor On Duty Cycle Figure 26. Standby Current vs Supply Voltagevs Dead-Time Input Voltage

17

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1

0.5

0−25 0 25 50

ICC

− S

up

ply

Cu

rren

t − m

A

1.5

2

75 100

C

CI


Average Supply CurrentVCC = 6 V, RT = 10 kΩ,CT = 330 pF

Stand-By Current, VCC = 40 V, No Load

Stand-By Current, VCC = 3.6 V, No Load

1.75

1.25

0.75

0.25

600

400

200

0−25 0 25 50

Max

imu

m C

on

tinu

ou

s P

ow

er D

issi

pat

ion

− m

W

800

1000

1200

75 100

1100

900

700

500

300

100

16-Pin N Plastic Dip

16-Pin NS Plastic SO

Thermal Resistance125°C/W

Thermal Resistance250°C/W

TA − Free-Air Temperature – C



Figure 27. Sandby Current vs Free-Air Temperature Figure 28. Maximum Continuous Power Dissipationvs Free-Air Temperature

18

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APPLICATION INFORMATION

R7

R6C4

470 Ω

1 µF220 Ω

C2

R4

R3

33 kΩ

33 kΩ

470 Ω150 Ω220 kΩ

0.47 µF 50 kΩ

R1

500 pF

pF

C5 R5500

C1

87654321

910111213141516

330 pF

L1

R2

33 kΩ

33 kΩ

Vref

33 kΩ33 kΩ

470 Ω

470 Ω

L2

VCC

Step-UpOutput

Step-DownOutput

TL1451A



Figure 29. High-Speed Dual Switching Regulator

19

PACKAGE OPTION ADDENDUM

www.ti.com 31-May-2014

Addendum-Page 1

PACKAGING INFORMATION

Orderable Device Status(1)

Package Type PackageDrawing

Pins PackageQty

Eco Plan(2)

Lead/Ball Finish(6)

MSL Peak Temp(3)

Op Temp (°C) Device Marking(4/5)

Samples

TL1451AMDREP ACTIVE SOIC D 16 2500 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM -55 to 125 TL1451EP

V62/06611-01XE ACTIVE SOIC D 16 2500 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM -55 to 125 TL1451EP

(1) The marketing status values are defined as follows:ACTIVE: Product device recommended for new designs.LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.PREVIEW: Device has been announced but is not in production. Samples may or may not be available.OBSOLETE: TI has discontinued the production of the device.

(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availabilityinformation and additional product content details.TBD: The Pb-Free/Green conversion plan has not been defined.Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement thatlead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used betweenthe die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weightin homogeneous material)

(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.

(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.

(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuationof the previous line and the two combined represent the entire Device Marking for that device.

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PACKAGE OPTION ADDENDUM

www.ti.com 31-May-2014

Addendum-Page 2

In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.

OTHER QUALIFIED VERSIONS OF TL1451A-EP :

• Catalog: TL1451A

• Automotive: TL1451A-Q1

• Military: TL1451AM

NOTE: Qualified Version Definitions:

• Catalog - TI's standard catalog product

• Automotive - Q100 devices qualified for high-reliability automotive applications targeting zero defects

• Military - QML certified for Military and Defense Applications

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TAPE AND REEL INFORMATION

*All dimensions are nominal

Device PackageType

PackageDrawing

Pins SPQ ReelDiameter

(mm)

ReelWidth

W1 (mm)

A0(mm)

B0(mm)

K0(mm)

P1(mm)

W(mm)

Pin1Quadrant

TL1451AMDREP SOIC D 16 2500 330.0 16.4 6.5 10.3 2.1 8.0 16.0 Q1

PACKAGE MATERIALS INFORMATION

www.ti.com 14-Jul-2012

Pack Materials-Page 1

*All dimensions are nominal

Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)

TL1451AMDREP SOIC D 16 2500 367.0 367.0 38.0

PACKAGE MATERIALS INFORMATION

www.ti.com 14-Jul-2012

Pack Materials-Page 2

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tl1451a-ep dual pulse-width-modulation control circuits

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