TO-126

1. EMITTER

2. COLLECTOR

3. BASE

BD233 / BD235 / BD237 TRANSISTOR (NPN)

FEATURES Complement to BD234/BD236/BD238 respectively

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit

VCBO Collector-Base Voltage BD233

BD235 BD237

45 60

100 V

VCEO Collector-Emitter Voltage BD233 BD235 BD237

45 60 80

V

VEBO Emitter-Base Voltage 5 V

IC Collector Current –Continuous 2 A

PC Collector Dissipation 1.25 W

TJ Junction Temperature 150 ℃Tstg Storage Temperature -55~+150 ℃

PC 25 W

RΘJA

Collector Dissipation (Tc=25 )℃ Thermal Resistance from Junction to Ambient 100 ℃/W

RΘJC Thermal Resistance from Junction to Case 5 ℃/W

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-126 Plastic-Encapsulate Transistors

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Equivalent Circuit

BD233,BD235,BD237,!�-�����o.��Solid dot = Green molding compound device, if none, the normal device

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ORDERING INFORMATION

Part Number Package Packing Method Pack Quantity

BD233 TO-126 Bulk

BD235 TO-126

BD237 TO-126 Bulk

BD233-TU TO-126 Tube

Bulk

BD235-TU TO-126 Tube

BD237-TU TO-126 Tube

BD233

�XXX BD235

�XXX BD237

�XXX

www.cj-elec.com 1 E,Aug,2017

60pcs/Tube

200pcs/Bag

200pcs/Bag

200pcs/Bag

60pcs/Tube

60pcs/Tube

Parameter Symbol Test conditions Min Max Unit

Collector-base breakdown voltage BD233

BD235

BD237

V(BR)CBO IC= 1mA, IE=0

45

60

100

V

Collector-emitter breakdown voltage BD233

BD235

BD237

V(BR)CEO IC= 100mA, IB=0

45

60

80

V

Emitter-base breakdown voltage V(BR)EBO IE= 1mA, IC=0 5 V

Collector cut-off current BD233

BD235

BD237

ICBO

VCB= 45V, IE=0

VCB= 60V, IE=0

VCB= 100V, IE=0

100 µA

Emitter cut-off current IEBO VEB= 5V, IC=0 1 mA

HFE(1) VCE= 2V, IC=150mA 40DC current gain

HFE(2) VCE=2V, IC= 1A 25

Collector-emitter saturation voltage VCE(sat) IC=1A, IB= 100m A 0.6 V

Transition frequency fT VCE=10V, Ic=250mA

f =10MHz 3 MHz

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aT =25� unless otherwise specified

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0.01 0.1 10

50

100

150

200

250

300

0 25 50 75 100 125 1500.00

0.25

0.50

0.75

1.00

1.25

1.50

1E-4 1E-3 0.01 0.1 10

200

400

600

800

1000

1E-4 1E-3 0.01 0.1 10

100

200

300

0 1 2 3 4 5 6 7 80.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

200 300 400 500 600 700 800 900 10001E-4

1E-3

0.01

0.1

1

2

VCE= 2VTa=100 oC

Ta=25 oC

COLLECTOR CURRENT IC (A)

DC

CU

RR

EN

T G

AIN

h

FE

IChFE ——

CO

LLEC

TOR

PO

WER

DIS

SIPA

TIO

N

P

c (W

)

AMBIENT TEMPERATURE Ta ( )℃

Pc —— Ta

2

COLLECTOR CURRENT IC (A)

BASE

-EM

ITTE

R S

ATU

RAT

ION

VOLT

AGE

V B

Esa

t (m

V)

Ta=25℃

Ta=100℃

β=10

ICVBEsat ——

2

Ta=25℃

Ta=100℃

β=10

VCEsat —— IC

CO

LLE

CTO

R-E

MIT

TER

SA

TUR

ATI

ON

VOLT

AGE

V C

Esa

t (m

V)

COLLECTOR CURRENT IC (A)

COMMONEMITTERTa=25℃3.0mA

2.7mA

2.4mA

2.1mA

1.8mA

1.5mA

1.2mA

0.9mA

0.6mA

IB=0.3mA

COLLECTOR-EMITTER VOLTAGE VCE (V)

CO

LLE

CTO

R C

UR

RE

NT

I C

(A

)

Static Characteristic

VCE=2V

Ta=25℃

Ta=100 oC

BASE-EMITTER VOLTAGE VBE(mV)

CO

LLE

CTO

R C

UR

RE

NT

I

C (A

)

IC —— VBE

2

Typical Characteristics

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TO-126 Package Outline Dimensions

Min Max Min MaxA 2.500 2.900 0.098 0.114

A1 1.100 1.500 0.043 0.059b 0.660 0.860 0.026 0.034

b1 1.170 1.370 0.046 0.054c 0.450 0.600 0.018 0.024D 7.400 7.800 0.291 0.307E 10.600 11.000 0.417 0.433e

e1 4.480 4.680 0.176 0.184h 0.000 0.300 0.000 0.012L 15.300 15.700 0.602 0.618

L1 2.100 2.300 0.083 0.091P 3.900 4.100 0.154 0.161Φ 3.000 3.200 0.118 0.126

Symbol Dimensions In Millimeters Dimensions In Inches

2.290 TYP 0.090 TYP

www.cj-elec.com 4 E,Aug,2017