UMT3904 / SST3904 / MMST3904 / 2N3904Transistors

NPN General Purpose TransistorUMT3904 / SST3904 / MMST3904 / 2N3904

!!!!Features

1) BVCEO > 40V (IC = 1mA)2) Complements the UMT3906 / SST3906 / MMST3906 / 2N3906.

!!!!Package, marking and packaging specificationsPart No.

Packaging type

Marking

Code

Basic ordering unit (pieces)

UMT3904

UMT3

R1A

T106

3000

SST3904

SST3

R1A

T116

3000

MMST3904

SMT3

R1A

T146

3000

TO-92

-

T93

3000

2N3904

!!!!Absolute maximum ratings (Ta = 25°C)

2N3904

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector powerdissipation

Junction temperature

Storage temperature

Symbol

VCBO

VCEO

VEBO

IC

Tj

Tstg

Limits

60

40

6

0.2

0.35

150

−55~+150

Unit

V

V

V

A

W

W

W

PC

0.2

0.625*

°C°C

* When mounted on a 7 x 5 x 0.6 mm ceramic board.

SST3904, MMST3904

UMT3904,SST3904,MMST3904

!!!!External dimensions (Units : mm)

UMT3904

SST3904

MMST3904

2N3904

0~0.1

0.2Min.

2.4±

0.2

1.3

0.95

0.45±0.1

0.150.4

2.9±0.2

1.9±0.2

0.95 0.95

+0.

2 −

0.1

−0.1 +0.2

+0.1 −0.06 +0.1

−0.05

(2)(1)

(3)

0~0.1

2.8±

0.2

1.6

0.3~

0.6

1.1

0.8±0.1

0.150.4

2.9±0.2

1.9±0.2

0.95 0.95

+0.

2 −

0.1

−0.1 +0.2

+0.1 −0.06 +0.1

−0.05

(2)(1)

(3)

0~0.1

(2)(1)

(3)

0.1~

0.4

2.1±

0.1

1.25

±0.

1

0.9±0.1

0.2 0.7±0.1

0.15±0.050.3

2.0±0.2

1.3±0.1

0.65 0.65

+0.1 −0

4.8±

0.2

(12.

7Min

.)

4.8±0.2 3.7±0.2

5 0.45±0.1 2.3

0.5 +0.15 −0.05

2.5 +0.3 −0.1

(1) (2) (3)

All terminals have same dimensions

All terminals have same dimensions

All terminals have same dimensions

ROHM : UMT3EIAJ : SC-70

(1) Emitter(2) Base(3) Collector

ROHM : SST3

(1) Emitter(2) Base(3) Collector

ROHM : SMT3EIAJ : SC-59

(1) Emitter(2) Base(3) Collector

ROHM : TO-92EIAJ : SC-43

(1) Emitter(2) Base(3) Collector

2.5M

in.

!!!!Electrical characteristics (Ta = 25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions

Collector-base breakdown voltageCollector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Emitter cutoff current

BVCBO

BVCEO

BVEBO

ICES

IEBO

6040

6

-

-

--

-

-

-

--

-

50

50

VV

V

nA

nA

IC = 10µAIC = 1mA

IE = 10µA

VCB = 30V

VEB = 3V

- - 0.95Base-emitter saturation voltage VBE(sat)

0.65 - 0.85V

- - 0.3 IC/IB = 50mA/5mACollector-emitter saturation voltage VCE(sat)

- - 0.2V

IC/IB = 10mA/1mA

IC/IB = 50mA/5mA

IC/IB = 10mA/1mA

30 - -

60 - -

DC current transfer ratio hFE 100 - 300 -

70 - -

40 - - VCE = 1V , IC = 0.1mA

VCE = 1V , IC = 1mA

VCE = 1V , IC = 10mA

VCE = 1V , IC = 50mA

VCE = 1V , IC = 100mATransition frequency

Collector output capacitance

fT

Cob

300

-

-

-

-

4

MHz

pF

VCE = 20V , IE = −10mA, f = 100MHz

VCB = 10V , f = 100kHz

Emitter input capacitance Cib - - 8 pF VEB = 0.5V , f = 100kHz

Delay time td - - 35 ns VCC = 3V , VBE(OFF) = 0.5V , IC = 10mA , IB1 = 1mA

VCC = 3V , VBE(OFF) = 0.5V , IC = 10mA , IB1 = 1mARise time tr - - 35 ns

Storage time tstg - - 200 ns VCC = 3V , IC = 10mA , IB1 = −IB2 = 1mA

VCC = 3V , IC = 10mA , IB1 = −IB2 = 1mA Fall time tf - - 50 ns

~

UMT3904 / SST3904 / MMST3904 / 2N3904Transistors

!Electrical characteristic curves

0

8

6

4

2

10

200 10

IB=0µA

5.0

10

15

20

25

30

35

40Ta=25°C

CO

LLE

CT

OR

CU

RR

EN

T :

IC (m

A)

COLLECTOR-EMITTER VOLTAGE : VCE (V)

Fig.1 Grounded emitter output characteristics

0.1 1.0 10 100

0.2

0.3

0.1

0

COLL

ECTO

R E

MIT

TER

SAT

URAT

ION

VOL

TAGE

: VC

E(sa

t) (V

)

COLLECTOR CURRENT : IC (mA)

Fig.2 Collector-emitter saturation voltage vs. collector current

Ta=25°CIC / IB=10

0.1 101.0 100 1000

100

10

500

5

DC

CU

RR

EN

T G

AIN

: hF

E

COLLECTOR CURRENT : IC (mA)

Fig.3 DC current gain vs. collector current ( Ι )

Ta=25°C

VCE=1V 10V5V3V

0.1 101.0 100 1000

100

10

500

5

DC

CU

RR

EN

T G

AIN

: hF

E

COLLECTOR CURRENT : IC (mA)

Fig.4 DC current gain vs. collector current ( ΙΙ )

VCE=5V

Ta=125°C

Ta=25°C

Ta=−55°C

UMT3904 / SST3904 / MMST3904 / 2N3904Transistors

0.01 1.00.1 10 100

100

10

500

5

AC

CU

RR

EN

T G

AIN

: hF

E

COLLECTOR CURRENT : IC (mA)

Fig.5 AC current gain vs. collector current

Ta=25°CVCE=5Vf=1kHz

0.1 1.0 10 100

0.8

1.2

1.8

1.6

0.4

0BASE

EM

ITTE

R S

ATU

RAT

ION

VO

LTAG

E : V

BE(s

at) (

V)

COLLECTOR CURRENT : IC (mA)

Fig.6 Base-emitter saturation voltage vs. collector current

Ta=25°CIC / IB=10

0.1 1.0 10 100

0.8

1.2

1.8

1.6

0.4

0

BA

SE

EM

ITT

ER

VO

LTA

GE

: V

BE

(ON

) (V

)

COLLECTOR CURRENT : IC (mA)

Fig.7 Grounded emitter propagation characteristics

Ta=25°CVCE=5V

1.0 10 100

100

1000

10

TU

RN

ON

TIM

E :

ton

(ns)

COLLECTOR CURRENT : IC (mA)

Fig.8 Turn-on time vs. collector current

Ta=25°CIC / IB=10

VCC=3V

15V40V

1.0 10 100

100

1000

10

RIS

E T

IME

: tr

(ns

)

COLLECTOR CURRENT : IC (mA)

Fig.9 Rise time vs. collector current

Ta=25°CIC / IB=10

VCC=40V

Ta=25°CIC=10IB1=10IB2

1.0 10 100

100

1000

10

ST

OR

AG

E T

IME

: ts

(ns

)

COLLECTOR CURRENT : IC (mA)

Fig.10 Storage time vs. collector current

VCE=3V

40V

15V

1.0 10 100

100

1000

10

FA

LL T

IME

: tf

(ns)

COLLECTOR CURRENT : IC (mA)

Fig.11 Fall time vs. collector current

Ta=25°CVCC=40VIC/IB=10

0.1 1.0 10 100

10

50

0.5

1

CA

PA

CIT

AN

CE

(pF

)

REVERSE BIAS VOLTAGE (V)

Fig.12 Input / output capacitance vs. voltage

Ta=25°Cf=1MHz

Cib

Cob

UMT3904 / SST3904 / MMST3904 / 2N3904Transistors

0.1 1.0 10 100

10

1.0

100

0.1

CO

LLE

CTO

R-E

MIT

TER

VO

LTA

GE

: V

CE (V

)

COLLECTOR CURRENT : IC (mA)

Fig.13 Gain bandwidth product

Ta=25°C

100MHz 200MHz 400MHz

300 MHz

500MHz

200MHz 100MHz

300MHz

1.0 10 100

100

1000

10C

UR

RE

NT

GA

IN-B

AN

DW

IDT

H P

RO

DU

CT

: fT

(M

Hz)

COLLECTOR CURRENT : IC (mA)

Fig.14 Gain bandwidth product vs. collector current

Ta=25°CVCE=5V

0.1 1 10 100

10

1

100

0.1

h P

AR

AM

ET

ER

NO

RM

ALI

ZE

D T

O 1

mA

COLLECTOR CURRENT : IC (mA)

Fig.15 h parameter vs. collector current

VCE=5Vf=270Hz

hfe

hoe

hiehre

Ta=25°CIC=1mAhie=3.84kΩhfe=141hre=5.03 × 10

−5

hoe=5.58µS

0 7525 50 100 125 150

100n

10n

1n

10µ

1µ

0.1nCO

LLE

CT

OR

CU

TO

FF

CU

RR

EN

T :

ICB

O (A

)

ANBIENT TEMPERATURE : Ta (°C)

Fig.16 Noise characteristics ( Ι )

VCB=25V

0.01 0.1 1 10

10k

1k

100k

100

SO

UR

CE

RE

SIS

TA

NC

E :

RS (

Ω)

COLLECTOR CURRENT : IC (mA)

Fig.17 Noise characteristics ( ΙΙ )

Ta=25°CVCE=5Vf=10kHz

12dB8dB

8.0dB

3dB1.0dB

3.0dB

5dB

5.0dB

NF=1.0dB

0.01 0.1 1 10

10k

1k

100k

100

SO

UR

CE

RE

SIS

TA

NC

E :

RS (

Ω)

COLLECTOR CURRENT : IC (mA)

Fig.18 Noise characteristics ( ΙΙΙ )

Ta=25°CVCE=5Vf=1kHz12dB8dB

8.0dB

3dB1.0dB

3.0dB

5dB

5.0dB

NF=1.0dB

0.01 0.1 1 10

10k

1k

100k

100

SO

UR

CE

RE

SIS

TA

NC

E :

RS (

Ω)

COLLECTOR CURRENT : IC (mA)

Fig.19 Noise characteristics ( ΙV )

Ta=25°CVCE=5Vf=10Hz

12dB8dB

8.0dB

3dB5dB

5.0dB

NF=3.0dB

10 1k100 10k 100k

6

12

10

8

4

2

0

NO

ISE

FIG

UR

E :

NF

(dB

)

FREQUENCY : f (Hz)

Fig.20 Noise vs. collector current

Ta=25°CVCE=5VIC=100µARS=10kΩ

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