transistores
TRANSCRIPT
Ingeniería de Sistemas
Ciclo IVIsaí Huamaní Gonzales
“TRANSISTORES”
TRANSISTOR JFET N-CH 30V TO-92 - 2N5638RLRAG
Technical/Catalog Information 2N5638RLRAG
Vendor ON Semiconductor
Category Discrete Semiconductor Products
Mounting Type Through Hole
FET Type N-Channel
Drain to Source Voltage (Vdss) 30VCurrent - Drain (Idss) @ Vds (Vgs=0) 50mA @ 20V
Input Capacitance (Ciss) @ Vds 10pF @ 12V (VGS)
Power - Max 310mW
Packaging Tape & Reel (TR)
Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Voltage - Cutoff (VGS off) @ Id -
Voltage - Breakdown (V(BR)GSS) 35V
Resistance - RDS(On) 30 Ohm
Current Drain (Id) - Max -
Lead Free Status Lead Free
RoHS Status RoHS Compliant
Other Names 2N5638RLRAG
Especificaciones Técnicas
TRANSISTOR 350V DE 5KA 5X7.6M M
Especificaciones Técnicas
Modelo Tubo de descarga de gas
Tipo: ZM 576 3R 350B ZM 576 3R 350BF
ZM 576 3R 350B Con el alambre de plomo
ZM 576 3R 350BF
Con el alambre de plomo, a prueba de averías
Ø 5mmX7.5m mde la dimensiónDiámetro: 5m mLongitud: 7.5m m
±0.2mm ±0.2mm
Nominal. C.C. chispear-sobre voltaje 350 VTolerancia de CONTRA ±20 %Impluse chispear-sobre voltaje en los μs 1KV/ ≤900 V
Corriente derivada de Impluse (onda 8/20μs) 5 KA
Corriente derivada del impulso 10/1000μs 100 A/Time
Corriente derivada de alternancia (50HZ, 10 veces) 5 A
Resistencia de aislamiento >109 ΩCapacitancia en 1MHz ≤1.5 Picofaradio
Voltaje 135 del mantenimiento VDC
TRANSISTOR BLF278 MOSFET
Especificaciones TécnicasDatasheets BLF278
Category Discrete Semiconductor Products
Family RF FETsSeries -Transistor Type 2 N-Channel (Dual)
Frequency 108MHz
Gain 22dB
Voltage - Test 50V
Current Rating 18ª
Noise Figure -
Current - Test 100mA
Power - Output 300W
Voltage - Rated 125V
Package / Case SOT-262A1
Supplier Device Package CDFM4
Other Names568-2412 / 933978520112 / BLF278 / BLF278-ND
TRANSISTOR NPN 40V 500MA 16-SOIC
Especificaciones Técnicas
Category Discrete Semiconductor Products
Family Transistors (BJT) - ArraysSeries -Transistor Type 4 NPN (Quad)Current - Collector (Ic) (Max) 500mAVoltage - Collector Emitter Breakdown (Max) 40V
Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mACurrent - Collector Cutoff (Max) -DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 10V
Power - Max 1WFrequency - Transition 300MHzMounting Type Surface MountPackage / Case 16-SOIC (0.154", 3.90mm
Width)Supplier Device Package 16-SOICOther Names MMPQ2222ATR
TRANS ARRAY PNP/N-CH 40V SOT363
Especificaciones Técnicas
Category Discrete Semiconductor Products
Family Transistors - Special PurposeSeries -Transistor Type PNP, N-ChannelApplications General PurposeVoltage - Rated 40V PNP, 60V N-ChannelCurrent Rating 600mA PNP, 115mA N-Channel
Mounting Type Surface MountPackage / Case 6-TSSOP, SC-88, SOT-363Supplier Device Package SOT-363
Other Names CTA2P1N-FDITR