ttq 3-2 led
DESCRIPTION
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Content
• Semiconductor physics
• Light emitting diode (LED)
• Laser diode (LD)
2
LED: light emission from radiative recombination of
carriers injected in forward biased p-n junction
• Video
3
LED wavelength and spectral width: depend on
the semiconductor band gap Eg
4
LED power-current characteristic
• Internal quantum efficiency:
Rrr: radiative recombination rate
Rnr: non-radiative recombination rate
Rtot: total recombination rate
N: carrier injection rate
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N: carrier injection rate
τrr: radiative recombination lifetime
τnr: non- radiative recombination lifetime
Nph: photon generation rate
Eph: energy of photon
I: bias current
e: electron charge
h: Planck constant
c: speed of light
λ: wavelength
int
int int int
1.24( )
( )ph ph ph
II hcP W N E NE
e m
ηη η
λ λ µ
= = = ≈
LED power-current characteristic
• External quantum efficiency: internal absorption and
internal total reflection
• LED emits about 1-2% of its internal optical power
• Epoxy lenses can increase ηext by 2-3 times
6
LED power-current characteristic
• Coupler efficiency2
couple NAη =
• In practice, about 1% of internal optical power is
coupled into fiber
7
Output power-current: linear across a small region!
8
LED modulation bandwidth
2.2rise fall ct t τ= ≈
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LED modulation bandwidth: modulated signal
frequency where output power is reduced by 3dB
• Rate equation:
• Transfer function:
c
dN I N
dt ed τ= −
τc: carrier lifetime
• Transfer function:
• Output power:
• 3dB modulation bandwidth
10
2( )
(1 )
DCm
C
PP ω
τ=
+
3
1
2dB
c
fπτ
=
Modulation bandwidth example
11
Examples for chapter 3.2
• Some commercial LEDs
• Problem 4-6:
– A double-heterojunction InGaAsP LED emitting at
a peak wavelength of 1310nm has radiative and a peak wavelength of 1310nm has radiative and
nonradiative recombination times of 25 and 90 ns,
respectively. The drive current is 35 mA. Find the
internal quantum efficiency and internal power
level
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