ultrafast sensors for the future - tti/vanguard · ultrafast sensors for the future c....
TRANSCRIPT
A/Prof. C. Tripon-CanselietUPMC - Université Pierre et Marie Curie – Electronics and Electromagnetism Lab (L2E) - France
In cooperation withTHALES Airborne Systems - France IEMN- Electronics , Micro and Nanotechnologies Institute – FranceNanyang Technological University/CINTRA – Singapore
Ultrafast sensorsFor the Future
Ultrafast sensors for the Future
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Optics metrology for electronics: specific needs for industrial applicationso Electronics technological bottleneck: high frequency activation and functionality
– Electronics/Electronics: DC to microwave domain– Optics/Optics: Terahertz domain– Optics/Electronics: Microwave to sub-mm range
o Optics for classical electronic clock jitter limitations overcoming– Optical laser sources: highest resolution for electronic systems– Semiconductor technological procees: Integration access
o Optics for ultra short pulse bandwith generation– Femtosecond risetime– Speed of light – Few tens to hundred fs time bandwidth: Highest external control frequency
Demonstration of optics in RF electronic systems: Active research fieldo Ligth/matter interactionso Integration of optics for microwave fucntionalitieso Nanotechnologies for improvment
Introduction
Introduction PC effect RF carrier generation RF magnitude switching RF phase shifting RF amplificationResearch strategy
Ultrafast sensors for the Future
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Identified efficient RF functunalities for industrial applications: State-of-the-Art in microwave photonics All optical signal processing Beam scanning of antennas arrays (True Time Delays) Very low noise generation (by signal injection) Radio over Fiber (RoF) systems (high data rates > 100 Gbits/s)
Technological support for systems integrationBuilding blocks Sources (Lasers, LEDs) Receivers (Photodiodes, photo transistors) RF information transport on optical carriers (AM/PM/FM) Information support (Optical waveguides)
Physical limitations scanning: Why not Nanoscale?o Confinement of light/matter interactions with diffraction effectso Nanotechnology platform access
Introduction
Guided space
Micro integration
Free space
Nano integration ?
Introduction PC effect RF carrier generation RF magnitude switching RF phase shifting RF amplificationResearch strategy
Ultrafast sensors for the Future
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One example among others: High frequency sampling George Valley chart
« Three Ten law »: 10 GHz – 10 fs – 10 Bits
Introduction
Jitter
Opening time
Time
Sampling pulses
Openinguncertainty
∆V
Optical clockneed
nsf
t 22..21
π=
Introduction PC effect RF carrier generation RF magnitude switching RF phase shifting RF amplificationResearch strategy
Ultrafast sensors for the Future
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Ligth/Matter interactions inventory: How we can play with light…. Light emission (Photoluminescence, Electroluminescence) Light Absorption Light scattering
Rayleigh scattering Brillouin scattering Raman scattering
Optical rotation
Case of bulk materials
Introduction
Bulk materials Dielectrics Semiconductors Metals
Reflection
Refraction Electro-optics (1st/2nd
orders)Acousto-optics
Electro-absorption
Absorption Photoconductive effectPhotovoltaïc effect
Plasmonics
Diffraction Wave mixing Grating Grating
Critical parametersAnisotropy of mediaPolarisation state of light
Introduction PC effect RF carrier generation RF magnitude switching RF phase shifting RF amplificationResearch strategy
Ultrafast sensors for the Future
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Photoconductive effect description Photoconductivity of semiconconductor materials (GaAs, GaAs BT)
Generation of electron/hole pairs: Material conductivity enhancementLocal photoresistance
Semiconducting materials familyEnergy band gapAbsorption coeffcient( ~104 cm-1)Carriers dynamicsResistivity
Optical commandTime domain shapeSource compactnesswaveguide
Introduction
( )1.24
optgE eV
λ ≤
InP:Fe
Si
CW o
ptic
alco
ntro
l
GaAs
CW t
o ul
traf
ast
optic
alco
ntro
l
InGaAs
LTG - GaAs
GaAs:Cr
λ
GaAsSbN (% x)
SW CNTGaAs NW
Introduction PC effect RF carrier generation RF magnitude switching RF phase shifting RF amplificationResearch strategy
Ultrafast sensors for the Future
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Nano material-based microwave devices under optical control for next generationof EM sensors Material and components approach :
Physics, design, simulation, modeling New semiconductors Carbon nanotubes Semiconductor Nanowires Metal/dielectric or Metal/semiconductor interfaces
Devices and functions approachPhysics, design, simulation, modeling Modulation by SPP generation Nano RF magnitude switching Nano RF beam scanning by nano antennas (RF au THz)
Characterization
Characterization
Associated signal processing functions
Research strategy
Introduction PC effect RF carrier generation RF magnitude switching RF phase shifting RF amplification
Ultrafast sensors for the Future
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Microwave photonic characterization platform (UPMC) Frequency and transient measurements (DC – 67 GHz) CW laser sources (0.8 – 1.3 and 1.55 µm) Femtosecond fibered and tunable laser source
(0.8 and 1.55 µm) Probe test environnement setup under specific thermal conditions
Electrical and electromagnetic multiscale and multiphysic Design platform (UPMC) Photoconductive effect homemade transient modeling in ADS software
– Carriers time varying density equivalent electrical modeling– Associated time varying photoresistance
Optical command characteristics power, spot size, wavelengthCarriers dynamics (mobilities and lifetimes)Semiconducting material dark resistivity
– Microwave circuit transient and frequency (after FFT) behaviour in microwavedomain
Photoconductive effect design tool in 3D electromagnetic software
Research strategy
Introduction PC effect RF carrier generation RF magnitude switching RF phase shifting RF amplification
Ultrafast sensors for the Future
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Actions plan (2008 – 2013)
Research strategy
Nano RF engineering
ArchitectureDesign
Bulk materials
GaAs, GaAs BT (0.8 µm)GaAs Sb (1 µm)
GaAsSbN (1.55 µm)
Thrust 1
Classical RF engineering
ArchitectureDesign
Nano materialsstudy
Nanowires (GaAs)SW and MW Nanotubes (C)
Surface effects (SPP)
Thrust 2
Nano RF engineering
ArchitectureDesign
Nano materialsimplementation
Nanowires (GaAs)SW and MW Nanotubes (C)
Thrust 3
Carriers dynamics (Mobiliies, lifetimes)Dark resisitivityCarriers transport (balisitc regime)Integration with MMIC planar technology(Process or deposition methods eligibility)
Nano electromagnetism under infinite boundaries(Limitations of classical electromagnetics)Feasibilty of transmission of RF signals in nano accessInterconnections
Limitations under finite boundariesArrays functionalities – DensificationNanoscale coupling effects
Introduction PC effect RF carrier generation RF magnitude switching RF phase shifting RF amplification
Ultrafast sensors for the Future
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Photoconductive effect homemade modelling (1/2) Microwave signal processing by optics
Carrier density evolution in time under time-varying optical illumination
Photoconductive effect
Optical signal transient shape(magnitude, frequency modulation)
Microwave switch dimensions (integrated technology)
Output parameters
Time domain photoresistance Rg(t)Input parameters
S-parameters (Fourier transform)
Substratepermittivityloss angleheightcarriers mobility+ carriers lifetime+ doping
Substrate parameters
Introduction PC effect RF carrier generation RF magnitude switching RF phase shifting RF amplification
Ultrafast sensors for the Future
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Photoconductive effect homemade modelling (2/2) Non linear electical modelling: Real-time control of microwave signals by optics
fmod= 1 GHz
Car
riers
den
sitie
s (/c
m3 )
fRF = 10 GHz - fmod= 1 GHz Δτ = 50 ps
Demonstration of modulation signal carrier transfertfrom optics to microwave carrier
Photoconductive effect
Research strategyIntroduction PC effect RF carrier generation RF magnitude switching RF phase shifting RF amplification
Time (ns)RF output signal
RF input signal
Time (ns)
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Photoconductive effect in microwave circuit: classical behaviour in microwavedomain Integration in a microwave circuit with line discontinuity
Magnitude switching / Phase shifting (high pass filter behaviour)
Microwave functionalities demonstration Modulation transfer Ultrafast sampling
Digital coding with high data rate and Bits resolution accessUltrafast clock trigerring thanks to very low jitter optical source
GenerationIntegration in MMIC ascillator on standard GaAs substrate
Side view of microwave photoconductive switch
( )( )
ON / OFFi21ON / OFF ON / OFF
21
S ONR e
S OFF∆ϕℜ = =
Associated RF efficiency
Photoconductive effect
Research strategyIntroduction PC effect RF carrier generation RF magnitude switching RF phase shifting RF amplification
Ultrafast sensors for the Future
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Photoconductive effect for 5 GHz carrier generation Integration in MMIC ascillator on standard GaAs substrate
Measured transient Optically generated microwave carrier at a
frequency of 5GHzMMIC top view
(UMS PH25 foundry process)
Oscillator tuned spectrums obtained by triangular modulation of incident optical power
(fmod 50 KHz, λ = 800 nm,)(1) 0–80 mW, (2) 0–130 mW and (3) 0–180 mW
S. Faci, C. Tripon-Canseliet, A. Benlarbi-Delaï, G. Alquié, S. Formont, , J. Chazelas“Optical generation of microwave signal for FMCW radar applications”, Microwave and optical Technology Letters, Vol 51, Issue3, pp.690-693, March 2009
S. Faci, C. Tripon-Canseliet, G. Alquié, S. Formont, , J. Chazelas“Ook modulator using photoconductive feedback oscillator”Microwave and optical Technology Letters, Vol 52, Issue 9, pp.2010-2016, Sept 2010
Microwave carrier generation by optics
Research strategyIntroduction RF carrier generation RF magnitude switching RF phase shifting RF amplificationPC effect
Ultrafast sensors for the Future
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Photoconductive effect for 5 GHz carrier generation Ultrafast pulse illumination: Real-time control of microwave carrier generation by optics
S. Faci, C. Tripon-Canseliet, A. Benlarbi-Delaï, G. Alquié, S. Formont, , J. Chazelas“Optical generation of microwave signal for FMCW radar applications”, Microwave and optical Technology Letters, Vol 51, Issue3, pp.690-693, March 2009
S. Faci, C. Tripon-Canseliet, G. Alquié, S. Formont, , J. Chazelas“Ook modulator using photoconductive feedback oscillator”Microwave and optical Technology Letters, Vol 52, Issue 9, pp.2010-2016, Sept 2010
MMIC top view (UMS PH25 foundry process)
Experimental results @ 5 GHz
Optional tunability by DC bias
RF signal setting time (50 ps)
RF signal time window
Optional tunability by optics
RF signal frequency
RF signal time window period
RF transient output (1ns/div)
RF transient output (200 ps/div)
Microwave carrier generation by optics
Research strategyIntroduction RF carrier generation RF magnitude switching RF phase shifting RF amplificationPC effect
Ultrafast sensors for the Future
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Photoconductive effect for ULB signal generation and emission Integration in a microwave circuit: Microwave functionalities demonstration
UWB signal generation by ultrafast optical control with optically-controlled signal waveform shaping
Experimental setup for optically-controlled UWB emitting system
Simulated and measured reflection coefficient of the UWB antenna Guldner, N.; Tripon-Canseliet, Faci, S., C.; Alquie, G.
“Optically-controlled UWB emission system” IEEE Microwave Conference, 2009 (EuMC), 2009, Page(s): 1916 - 1919
Transfer function of the system
Transient response of the emission antenna
Experimental UWB photogenerated signal
Microwave carrier generation by optics
Research strategyIntroduction RF carrier generation RF magnitude switching RF phase shifting RF amplificationPC effect
Ultrafast sensors for the Future
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ON/OFF ratio enhancement under CW illumination: Confinement intensification Membrane material RF circuit mismatching (at OFF state)
TechnologyOn/Off ratio magnitude [dB]
@ 10 GHz @ 20 GHZ @ 40 GHz
Standard 1.45 0.45 0.04
Membrane 4.24 3.18 2.94
C. Tripon-Canseliet, S. Faci, K. Blary, G. Alquié, S. Formont, J. ChazelasSPIE International Conference on Application of photonic Technology, Quebec, Canada, June 2006
Interaction volume: 20x20x2 µm3
TechnologyOn/Off ratio magnitude [dB]
@ 10 GHz @ 20 GHZ @ 40 GHz
RF confined 14.4 10.5 6.5
RF Confined 35.1 19.0 17.3
Interaction volume: 1x1x0.5 µm3
Carriers density increase Capacitive behaviour lowering Optimization of RF access design
DGA contract n° 07.34.014 (2007-2010)Partners: IEMN and THALES Airborne Systems
Microwave magnitude switching by optics
Research strategyIntroduction RF magnitude switching RF phase shifting RF amplificationPC effect RF carrier generation
Ultrafast sensors for the Future
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ON/OFF ratio enhancement under CW illumination: Confinement intensificationNanotechnology-based MPCS @ 0.8 µm
Dielectric nano waveguide implementation
Active area dimensions R ON/OFF@ 20 GHz [dB]
R ON/OFF@ 40 GHz [dB]
1 x 1 x 0.5 µm3 (P1)(P2)
0.22.41
0.010.54
0.5 x 1 x 0.5 µm3 (P1)(P2)
0.175.13
0.281.55
0.3 x 1 x 0.5 µm3 (P1)(P2)
1.598.65
0.233.13
Microwave magnitude switching by optics
Metal
GaAs standard
SiO2
Si3N4
Si, SiGe, GaAs nanowires implementation
IlluminationR = 40 µm, de = 2 µm
Nano-Wire
Air gap
GaAs substrate
Line
Line
Optical incident power[mW]
Resistivity[Ω.cm]
Conductivity[S.m-1]
0 1,13E+04 8,84E-034.3 5,84E+01 1,71E+007.7 7,60E+00 1,32E+0110 7,26E+00 1,38E+01
Experimental values of a SI GaAs photoconductivity under 0.8µm optical illumination
2009 MERLION program (French Embassy @ Singapore)– Nw-based electronicsPartnership: IEMN- UPMC- NTU
0.5 µm
Research strategyIntroduction RF magnitude switching RF phase shifting RF amplificationPC effect RF carrier generation
Ultrafast sensors for the Future
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Nanotechnology-based MPCS @ 1.55µm: Quaternary semiconducting material bukmaterial Study of photoconductivity of quaternary semiconductors (GaAsSbN) Design and tests of optically-controlled microwave switches
Experimental magnitude ON/OFF ratio @ 1.55 µm in frequency
2008 MERLION program (French Embassy) grantGaAsSbN process for optoelectronicsPartnership: IEMN-UPMC- NTU
K.H. Tan, C. Tripon-Canseliet, S. Faci, A.Pagies, M. Zegaoui, W. K.Loke, S. Wicaksono, S. F. Yoon, V. Magnin, D. Decoster, and J. Chazelas,IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 22, NO. 15, AUGUST 1, 2010
K. H. Tan, S. F. Yoon, C. Tripon-Canseliet, W. K. Loke, S. Wicaksono, S. Faci, N. Saadsaoud, J. F. Lampin, D. Decoster, and J. Chazelas, APPLIED PHYSICS LETTERS 93, 063509 2008
Carrier lifetime measurement @ 1.2 -1.55 µmMPCS substrate structure
2010ANR/ A star joined program grantnovel dilute nitride III-V Compound sEmiconductoR for 1550nm
Ultra-Fast PhotoconductIve SwitchE (CERISE)Partnership: IEMN-UPMC – THALES - NTU
Microwave magnitude switching by optics
Research strategyIntroduction RF magnitude switching RF phase shifting RF amplificationPC effect RF carrier generation
Ultrafast sensors for the Future
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Nanotechnology-based MPCS @ 1.55µm: CNT-based technology Modeling and characterization of RF behaviour of MW or metallic SW CNTs Study of photoconductivity of semiconducting SW CNTs under polarized Design and test of CNT-based RF nano emitters Design and tests of optically-controlled microwave phase shifters
2010 DGA/DSTA joined program grantNano antennasPartnership: IEMN-UPMC – THALES - NTU
Microwave phase shifting by optics
A. Maiti, Caron Nanotubes: Band gap engineering with strain, Nature Materials 2 (2003) 440
J. Guo, M. A. Alam, Y. Yoon, Appl. Phys. Lett. 88, 133111 (2006).
SEM photograph of vertical MW CNT processed by PECVD @ NTU
CNT
Examples of RF reflective (a) and filtering (b) structures for CNT RF propertiesextraction
Research strategyIntroduction RF phase shifting RF amplificationPC effect RF carrier generation RF magnitude switching
Ultrafast sensors for the Future
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Research work focus (since 2007): Nanotechnology-based emitting system @ 1.55µm Study of photoconductice of SW CNT-based FET with transparent electrodes (ITO) Design and tests of optically-controlled microwave amplifier with reported matching circuit in
hybrid technology
20
Microwave amplification by optics
2010 ANR program grantMicrowave Optically-Controlled Cnt-based emitting ArchitecturePartnership: IEMN-UPMC – THALES - NTU
Nano RF amplifier
S SDG G
aligned SWNTs
Pd layerHigh-k
SiO2
High-resistivity Si substrate
Laser excitation
Active quadripole
Research strategyIntroduction RF amplificationPC effect RF carrier generation RF magnitude switching RF phase shifting
Ultrafast sensors for the Future
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Eligibility by experimental demonstration of nano material efficiency in dynamicregime
o Nano wires/tubesl arrayso Nano ribbons/cristals/shells
Extension of existing modeling and design tools to mutliscale components and devices
Prospect new technological process/deposition methodsto open access to low cost components fabrication
Optimization of existing nano materials integration for microwave photonicpurposes
o Electronic accesso Light interaction effects (plasmonics)
Prospects
M. S. Islam, N. P. Kobayashi, S-Y. Huang
2008 2nd IEEE International Nanoelectronics Conference(INEC 2008), p.1009-1014
Research strategyIntroduction RF amplificationPC effect RF carrier generation RF magnitude switching RF phase shifting
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Collaboratorso G. Alquié (L2E)o D. Decoster (IEMN) - Professoro J. Chazelas (THALES) – Technical Directoro K.L. Pey (NTU previously - now @SUTD) - Professoro Yoon S.F. - Tay B. K (NTU/EEE school) - Professorso D. Baillargeat (CINTRA) - Professor
PhD students and Post Docs o S. Faci – K. Louertani - N. Guldner – B. Guillot (L2E)o N. Saassaoud / M. Zegaoui / A. Pagies/ (IEMN)o A. Olivier (CINTRA/IEMN)o Teo E. – Tan D.
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Thank you for your attention
Acknowledgments
Mimicking the Human being
Nanotechnologies
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Trust 1 : Study of metallic/semiconducting interfacesDGA contract n°08.108.38 - Partners: IEMN – Thales Research and Technology
Solution for confinement of light for RF modulation of optical carriers
Design, fabrication and characterization of a fully-integrated device
θr
nd + ΔnR
ΔR
Δn(V) = nd cos(ωmt)
θ
nd ki
kr
ktEt
Ei Er
kx
θi
θt
z
x
n1
n2
Prism
Metal
Dielectric
Prism
Metal
Dielectric
Incident beam
Attenuated beam
Incident beam
Surface plasmon
Kretschmann configuration Otto configuration
Research actions plan
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Nanotechnologies: performances attendues Propriétés électriques
Résistivité/conductivité, résistance de contact avec différents métaux Propriétés électroniques
Transport / Dynamique des électrons (mobilités, vitesse de transit, temps de vie) Propriétés optiques
Structure de bande / Sensibilité en longueur d’onde (Bande spectrale d’absorption) Propriétés thermiques Propriétés mécaniques Techniques de fabrication
Nano objets: vers des propriétés surprenantes
Propriétés des CNTs compoarées aux matériaux semiconducteurs connus
P. Avouris, M. Radosavljevic, S. J. Wind, CNT electronics andoptoelectronics, NanoScience and Technology, Applied Physics ofCarbon Nanotubes, Fundamentals of Theory, ISBN 978-3-540-23110-3
Résisitivté de nanofils d’InN – Résistivité avec et sans résistance de contact (Méthode à 4 pointes en noir)
F. Werner, F. Limbach, M. Carsten, C. Denker, J.Malindretos, A. Rizzi,Nano Lett., Vol. 9, No. 4, 2009
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Nanofils: Méthodes de fabrication pour composants électroniques et optoélectroniques Structures homogènes Jonctions PN Transistors
FETMOSFET
Nano engineering Approche « Bottom-up »: croissance catalysée Approche « Top-down »: gravure verticale
Mise en réseau de nanobjets
Nano objets: Propriétés optoélectroniques
Y. Li, F. Qian, J. Xiang, and C. M. LieberMaterialsToday, Oct. 2006, 9, 10
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Exemple de nanofils d’InP Caractérisation optique: Electroluminescence
Nano objets: Propriétés optoélectroniques
X. Duan, Y. Huang*², Y.Cui, J.Wang*& C.M. Lieber, Nature, 409, Jan 2001, p.66-68
5 µm p-n junction
Diam: 65 et 68 nm
5 µm
Diam: 39 et 49 nm
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Exemple de nanofils de Si Caractérisation optique : photoluminescence
Nano objets: Propriétés optoélectroniques
M.-H. Kim , T.-E. Park, U.-K. Kim, H.-J. Choi, G.-Y. Sung, J.- H. Shin, K. Suh2007 4th IEEE International Conference on group IV Photonics, Page(s): 1 - 3
Th Stelzner, M Pietsch, G Andra, F Falk, E Ose and S Christiansen
Nanotechnology 19 (2008) 295203
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Nanofils hétérostructurés (GaAs/GaP) Caractérisation statique I(V) et optique (électroluminescence)
Nano objets: Propriétés optoélectroniques
Gudiksen, M., et al.,
Nature (2002) 415, 617
Wu, Y., et al.,
Nature (2004) 430, 61
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Nanofils hétérostructurés (GaN/InGaN/GaN/AlGaN/GaN) Caractérisation statique I(V) et optique (électroluminescence)
Nano objets: Propriétés optoélectroniques
Qian, F., et al., Nano Lett. (2005) 5, 2287
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Nanotubes de Carbone Propriétés optoélectroniques
Jonctions PN: Electroluminescence
Nano objets: Propriétés optoélectroniques
Chen, J., et al., Science (2005) 310, 1171
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Nanotubes de Carbone Représentation par un enroulement d’une feuille de graphène (arrangement 2D
d’atomes de Carbone) Nature métallique ou semiconductrice déterminée par
Diamètre Type d’enroulement (mono/multi paroi) Chiralité
Propriétés électroniques Mobilités Résistivité
Nano objets: Propriétés optoélectroniques
Fig.2: Pictorial representation of (A) graphene sheet and (B) rolled carbon nanotube lattice structures (the
latter shows a (16,0) tube). Fig. 3: CNT energy gap and intrinsic doping ni
as a function of tube radius
C Cgap
CNT
t aE
d−⋅
= (1)
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Nanotubes de Carbone Propriétés optoélectroniques
Photoconductivité: Dépendance en polarisation
Nano objets: Propriétés optoélectroniques
X. Qiu, M. Freitag, V. Perebeinos, P. AvourisNano Lett. 5, 749 (2005).
J. Guo, M. A. Alam, Y. Yoon, Appl. Phys. Lett. 88, 133111 (2006).
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Nano objets : Synthèse Composants électroniques: Diodes, Transistors
Applications industrielles: circuits logiques (Mémoires) Composants optoélectroniques: LEDs, (Photodiodes PIN)
Applications industrielles: Ecrans
Nano objets: Propriétés optoélectroniques
Composants pour applications RF Utilisation des propriétés optiques
Nano dispositifs intégrés à contrôle optique
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Commande optique CW: Commutation d’amplitude Recherche du confinement de l’interaction Augmentation de la densité de porteurs Diminution du comportement capacitif RF du dispositif
Premiers travaux effectués au L2E (2006) Structure membrane Augmentation de l’impédance des lignes d’accès: Réduction de la zone d’interaction
Dispositifs intégrés RF à contrôle optique
TechnologyOn/Off ratio magnitude [dB]
@ 10 GHz @ 20 GHZ @ 40 GHz
Standard 1.45 0.45 0.04
Membrane 4.24 3.18 2.94
C. Tripon-Canseliet, S. Faci, K. Blary, G. Alquié, S. Formont, J. ChazelasSPIE International Conference on Application of photonic Technology, Quebec, Canada, Juin 2006
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Commande optique CW: Commutation d’amplitudeRecherche du confinement de l’interaction lumière/matière pour la commutation d’amplitude par l’optique Réduction de la zone d’éclairement
Dispositifs intégrés RF à contrôle optique
Optical wavelength: 800 nm - Incident optical power: 5.3 mW
0
5
10
15
20
25
0 1 2 3 4 5 6 7 8 9 10
Frequency [GHz]
ON
OFF
ratio
[dB
]
Classical fiber - 4.7 mWLensed fiber - 5.3 mW
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Exemple de nanofils d’InP Caractérisations statiques I(V)
Application à des jonctions croisées
Nano objets: Propriétés optoélectroniques
X. Duan, Y. Huang, Y.Cui, J.Wang& C.M. Lieber, Nature, 409, Jan 2001, p.66-68
10 mm
10 nm
Diam: 47 nm
1 mm
Ni/In/Au contacts
Diam: 45 nm
1 mm
Ni/In/Au contact electrodes
2 mm
Diam: 29 nmDiam: 40 nm
n-n
p-p
n-p
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Exemple de nanofils de Si Caractérisation statique de transistors à effet de champ
Nano objets: Propriétés optoélectroniques
H. Lu et Al, Nano Letters(2008), 8, 925
100 nm channel length
500 nm
Vds@-10 mV
J. Martinez, R.V. Martinez, R. Garcia, IEEE-NANO 2009. 9th IEEE Conference on Nanotechnologies Page(s): 442 - 443
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Exemple de nanofils de Si (méthode top-down améliorée) Caractérisation statique I(V)
Nano objets: Propriétés optoélectroniques
Jing Zhuge; Yu Tian; Runsheng Wang; Ru Huang; Yiqun Wang; Baoqin Chen; Jia Liu; Xing Zhang; Yangyuan Wang;
IEEE Transactions on Nanotechnology, 9 , Issue 1, 2010, Page(s): 114 - 122
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Hybridation et mise en réseau de Nanofils (méthode Bottom-up) Caractérisation statique I(V)
Nano objets: Propriétés optoélectroniques
M. S. Islam, N. P. Kobayashi, S-Y. Huang
2008 2nd IEEE International Nanoelectronics Conference (INEC 2008), p.1009-1014