unidirectional and bidirectional tvs devices

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Only One Name Means ProTek’Tion™ www.protekdevices.com 1003.R1 4/11 Page 1 1003 Technical Article The Differences Between Unidireconal and Bidireconal TVS Devices By: Ivan G. Lawson UnidiRecTionAl TVS deViceS Figure 1 shows a posive and negave transient at the input of a device pro- tected by a unidireconal TVS diode. During a transient’s posive cycle, the TVS diode juncon is reversed biased. The diode acts in avalanche mode as the transient current (I 1 ) flows to ground. The transient clamps at or below the maximum clamping level provided by the TVS diode. During a transient’s negave cycle, the TVS diode juncon is forward biased. The transient is clamped at one diode drop (~0.6V) as the TVS conducts the transient current (I 2 ) in the forward direcon. The avalanche breakdown (V (BR) - I R ) depicted on a Unidireconal V-I curve is shown in Figure 2. This is the level in which a diode will start conducng in the reverse direcon with the applicaon of a transient (not to be confused with the maximum clamping voltage). Discrete components can fail from voltage spikes in the forward direcon. While both unidireconal and bidireconal TVS devices offer circuit protecon for this type of transient, the unidireconal device is usually lower in cost. Figure 1. Unidireconal device (Asymmetrical clamping) V IN V OUT I 1 I 2 8kV Posive and Negave Transient 12V Posive and 0.6V Negave Clamped Waveform for Unidireconal Device I FPP P-N + - V F I F I R V R BV I PP V c CURRENT I VOLTAGE V P-N - + Figure 2. Unidireconal V-i curve BidiRecTionAl TVS deViceS Figure 3 shows a posive and negave transient at the input of a device pro- tected by a bidireconal TVS diode. During a transient’s posive cycle, the TVS diode D1 is reversed biased while the other diode D2 is forward biased. D1 acts in avalanche mode (similar to a unidireconal diode) as the transient current (I 1 ) flows to ground. The transient clamps at or below the maximum clamping level provided by the TVS diode. During a transient’s negave cycle, D2 is reversed biased, while the other diode D1 is now forward biased. D2 acts in avalanche mode as the transient current (I 2 ) is clamped at one diode drop (~12V) as the TVS conducts the transient current in the forward direcon. The avalanche breakdown (V (BR) - I R ) depicted on a Bidireconal V-I curve is shown in Figure 4. This is the level in which a diode will start conducng in either direc- ons with the applicaon of a transient (not to be confused with the maximum clamping voltage). Bidireconal devices typically offer mulple lines of circuit protecon and are used in applicaons where a unidireconal configuraon is not sufficient. V IN V OUT I 1 D 2 D 1 I 2 8kV Posive and Negave Transient 12V Posive and 12V Negave Clamped Waveform for Bidireconal Device Figure3. Bidireconal device (Symmetrical clamping) I PP V c P-N + - BV V R I R I R V R BV I PP V c - + CURRENT I VOLTAGE V Figure 4. Bidireconal V-i curve

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Unidirectional and Bidirectional TVS Devices

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Page 1: Unidirectional and Bidirectional TVS Devices

Only One Name Means ProTek’Tion™

www.protekdevices.com1003.R1 4/11 Page 1

1003 Technical Article

The Differences Between Unidirectional and Bidirectional TVS DevicesBy: Ivan G. Lawson

UnidiRecTionAl TVS deViceS

Figure 1 shows a positive and negative transient at the input of a device pro-tected by a unidirectional TVS diode.

During a transient’s positive cycle, the TVS diode junction is reversed biased. The diode acts in avalanche mode as the transient current (I1) flows to ground. The transient clamps at or below the maximum clamping level provided by the TVS diode.

During a transient’s negative cycle, the TVS diode junction is forward biased. The transient is clamped at one diode drop (~0.6V) as the TVS conducts the transient current (I2) in the forward direction.

The avalanche breakdown (V(BR) - IR) depicted on a Unidirectional V-I curve is shown in Figure 2. This is the level in which a diode will start conducting in the reverse direction with the application of a transient (not to be confused with the maximum clamping voltage).

Discrete components can fail from voltage spikes in the forward direction. While both unidirectional and bidirectional TVS devices offer circuit protection for this type of transient, the unidirectional device is usually lower in cost.

Figure 1. Unidirectional device (Asymmetrical clamping)

VINVOUT

I1

I2

8kV Positive and Negative Transient

12V Positive and 0.6V Negative Clamped Waveform for Unidirectional Device

IFPP

P-N+ -

VF

IF

IR

VRBV

IPP

Vc

CURRENT I

VOLTAGE V

P-N- +

Figure 2. Unidirectional V-i curve

BidiRecTionAl TVS deViceS

Figure 3 shows a positive and negative transient at the input of a device pro-tected by a bidirectional TVS diode.

During a transient’s positive cycle, the TVS diode D1 is reversed biased while the other diode D2 is forward biased. D1 acts in avalanche mode (similar to a unidirectional diode) as the transient current (I1) flows to ground. The transient clamps at or below the maximum clamping level provided by the TVS diode.

During a transient’s negative cycle, D2 is reversed biased, while the other diode D1 is now forward biased. D2 acts in avalanche mode as the transient current (I2) is clamped at one diode drop (~12V) as the TVS conducts the transient current in the forward direction.

The avalanche breakdown (V(BR) - IR) depicted on a Bidirectional V-I curve is shown in Figure 4. This is the level in which a diode will start conducting in either direc-tions with the application of a transient (not to be confused with the maximum clamping voltage).

Bidirectional devices typically offer multiple lines of circuit protection and are used in applications where a unidirectional configuration is not sufficient.

VINVOUT

I1D2

D1 I2

8kV Positive and Negative Transient

12V Positive and 12V Negative Clamped Waveform for Bidirectional Device

Figure3. Bidirectional device (Symmetrical clamping)

IPP

Vc

P-N+ -

BVVR

IR

IR

VRBV

IPP

Vc

- +

CURRENT I

VOLTAGE V

Figure 4. Bidirectional V-i curve

Page 2: Unidirectional and Bidirectional TVS Devices

Only One Name Means ProTek’Tion™

www.protekdevices.com1003.R1 4/11 Page 2

1003 Technical Article

comPAny inFoRmATion

comPAny PRoFile

ProTek Devices, based in Tempe, Arizona USA, is a manufacturer of Transient Voltage Suppression (TVS) products designed specifically for the protection of electronic systems from the effects of lightning, Electrostatic Discharge (ESD), Nuclear Electromagnetic Pulse (NEMP), in-ductive switching and EMI/RFI. With over 25 years of engineering and manufacturing experience, ProTek designs TVS devices that provide application specific protection solutions for all electronic equipment/systems.

ProTek Devices Analog Products Division, also manufactures analog interface, control, RF and power management products.

COPYRIGHT © ProTek Devices 2011 - This literature is subject to all applicable copyright laws and is not for resale in any manner.

SPECIFICATIONS: ProTek reserves the right to change the electrical and or mechanical characteristics described herein without notice.

DESIGN CHANGES: ProTek reserves the right to discontinue product lines without notice and that the final judgement concerning selection and specifications is the buyer’s and that in furnishing engineering and technical assistance. ProTek assumes no responsibility with respect to the selection or specifications of such products. ProTek makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ProTek assume any liability arising out of the application or use of any product or circuit and specifically disclaims any and all liability without limitation special, consequential or incidental damages.

LIFE SUPPORT POLICY: ProTek Devices products are not authorized for use in life support systems without written consent from the factory.

conTAcT US

corporate Headquarters2929 South Fair LaneTempe, Arizona 85282USA

By TelephoneGeneral: 602-431-8101Sales: 602-414-5109Customer Service: 602-414-5114

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