v fb = 1/q ( g - s )
DESCRIPTION
V FB = 1/q ( G - S ). (includes semiconductor and oxide components). (position of the Fermi level). (the amount of “band bending”). -. -. -. V FB = - V bi. EC (intrinsic). D Eg. EF. available impurity band states. filled impurity band states. EC (degenerate) ~ ED. - PowerPoint PPT PresentationTRANSCRIPT
VFB = 1/q (G- S)
- - -
VFB= - Vbi
(the amount of “band bending”)
(position of the Fermi level)
(includes semiconductorand oxide components)
Degenerate Semiconductors
As the doping conc. increases more, EF rises above EC
EV
EC (intrinsic)available impurity band states EFEg
EC (degenerate) ~ EDfilled impurity band states
apparent band gap narrowing:Eg* (is optically measured)
-
Eg* is the apparent band gap: an electron must gain energy Eg* = EF-EV
Quantum Effectson Threshold Voltage
