vbic versus hicum for high-ghz, high power applications
TRANSCRIPT
Freescale Semiconductor Confidential Proprietary. Freescale™ and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2004
VBIC versus HICUMfor high-GHz, high Power
Applications
Ralf Reuter, Jens SchmidtRF/IF TechnologyInnovation Center EMEA
November 16, 2004
Bipolar User Meeting, Rev. 1November 12, 2004
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Background
High-GHz & High-Power Applications:
Noise parameter predictionHigh current modelingOptimum load- and source-impedance predictionCompression & Harmonics
S-Parameter simulation!!precise S11 for optimum source impedanceprecise S22 for optimum load impedanceprecise S21 for gain
Device for investigation:BiCMOS 0.18µfT/fmax ~ 110/130 GHzBVCE0 ~ 3 V, BVBC0 ~ 8 V
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Voltage Controlled Output Characteristics
VBIC HICUM
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Current Controlled Output Characteristics
VBIC HICUM
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Gummel Plot VCE Controlled
VBIC HICUM
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fT verus Collector Current IC
VBIC HICUM
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fmax versus Collector Current IC
HICUMVBIC
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Summary I
Nearly same modeling quality for VBIC and HICUMsmall advantage for HICUM at extremely high currents
not important for circuit designVBIC seems to be sufficient
A) Prove of model approach by large-signal measurementsB) Stability of model simulation time
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Load-Source Pull @ 40 GHz
f = 40 GHz, VCE = 2.0 V, VBE = 0.851 VFixed optimum load- and source impedance @ Pin = 0 dBmWe = 0.245 µm, Le = 10 µm, Ne = 1
0
2
4
6
8
10
-20 -15 -10 -5 0 5Pin [dBm]
Pou
t [dB
m],
Gai
n [d
B]
VBIC
0
2
4
6
8
10
-20 -15 -10 -5 0 5Pin [dBm]
Pou
t [dB
m],
Gai
n [d
B]
HICUM
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Optimum Impedances @ 40 GHz
f = 40 GHz, VCE = 2.0 V, VBE = 0.851 V, Pin = 0 dBmWe = 0.245 µm, Le = 10 µm, Ne = 1
(E95846, W10) 40GHz (0.25x9.9x1)
ZS (measured)ZS (simulated)ZL (measured)ZL (simulated)
VBIC (E95846, W10) 40GHz (0.25x9.9x1)
ZS (measured)ZS (simulated)ZL (measured)ZL (simulated)
HICUM
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Summary II
Poor S11 modeling for HICUM (low RB) over estimated gain
Poor S22 modeling error in optimum load > 50%
HiCUM took longer to simulateoften convergence problems in large circuits (ADS 2003C)
Needed:Model has to predict S-parameters
Modeling approach not only based on fT/fmaxS-parameters as optimization goal