vertex 2008 july 28–august 1, 2008, utö island, sweden cmos pixel vertex detector at star michal...
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Michal Szelezniak 17th International Workshop on Vertex detectors, July 28–August 1, HFT and PIXEL detector TPC points at the SSD ~ 1 mm SSD points at the IST ~ 300 µm IST points at the PIXEL ~ 250 µm PIXEL points at the vertex 60 µm) Heavy Flavor Tracker (HFT) will extend the physics reach of the STAR experiment for precision measurement of the yields and spectra of particles containing heavy quarks The key requirement for the physics program is to:TRANSCRIPT

Vertex 2008July 28–August 1, 2008, Utö Island,
Sweden
CMOS pixel vertex detector at STAR
Michal Szelezniakon behalf of:LBNL: E. Anderssen, L. Greiner, H. Matis, T. Stezelberger, X. Sun, Ch. Vu, H. Wieman
IPHC: A. Besson, A. Brogna, G. Claus, C. Colledani, A. Dorokhov, G. Doziere, W. Dulinski, M.Goffe, D. Grandjean, A. Himmi, Ch. Hu, K. Jaaskelainen, M. Koziel, F. Morel, A.Shabetai, I.Valin, M. Winter

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Outline
PIXEL detector as a part of the Heavy Flavor Tracker
PIXEL detector characteristics
MAPS as the sensor technology for PIXEL
Development of MAPS for PIXEL
Development of the readout electronics for PIXEL
Summary and future work

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HFT and PIXEL detector
TPC points at the SSD ~ 1 mm SSD points at the IST ~ 300 µm IST points at the PIXEL ~ 250 µm PIXEL points at the vertex <30 µm
PIXEL at 2.5 and 8 cm
IST at 14 cm
SSD at 23 cm
Heavy Flavor Tracker (HFT)
Resolve displaced vertices (>60 µm)
Heavy Flavor Tracker (HFT) will extend the physics reach of the STAR experiment for precision measurement of the yields and spectra of particles containing heavy quarks
The key requirement for the physics program is to:

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Two layers at 2.5 & 8 cm radii Sensor spatial resolution < 10 μm Coverage 2π in φ and |η|<1 Over 400 M pixels 0.28 % radiation length/layer (VXD3 0.4%, ALICE pixel detector ~1%) Thinned silicon sensors (50 μm thickness) Air cooled Power dissipation ~100 mW/cm2
Quick extraction and detector replacement Stability and insertion reproducibility within a 30 μm window Integration time <200 μs (L=8×1027) Radiation environment at the level of up to 300 krad/year and 10×1012/cm2
Neq /year
PIXEL detector characteristics
Very challenging mechanical and sensor design

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PIXEL detector design
Ladder with 10 MAPS sensors (~ 2×2 cm each)
MAPSRDObuffers/drivers
4-layer kapton cable with aluminium traces
Mechanical support with kinematic mounts
2 layers
Cabling and cooling infrastructure
Detector extraction at one end of the cone
New beryllium beam pipe (0.5 mm thickness, 2 cm radius)

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Monolithic Active Pixel SensorsProperties:
Standard commercial CMOS technology Sensor and signal processing are integrated in
the same silicon wafer Signal is created in the low-doped epitaxial layer
(typically ~10-15 μm) → MIP signal is limited to <1000 electrons
Charge collection is mainly through thermal diffusion (~100 ns), reflective boundaries at p-well and substrate → cluster size is about ~10 pixels (20-30 μm pitch)
100% fill-factor Only NMOS transistors inside the pixels
MAPS technology is an attractive choice for the PIXEL detector
MAPS pixel cross-section (not to scale)
MAPS and competition MAPS Hybrid Pixel
SensorsCCD
Granularity + - +
Small material budget + - +
Readout speed + ++ -
Radiation tolerance + ++ -

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Sensor prototypes for Pixel
MimoSTAR 2 prototype in AMS 0.35 technology
– 128 × 128 pixel (30 µm pitch)
– 4 ms integration time
– Analog readout– Radiation tolerant
diode design (elimination of the thick oxide from the vicinity of the charge collecting diode)
– JTAG controlled configuration
MAPS show promising performance for the PIXEL detector
Based on tests of several different prototypesS/N>12 allows detection efficiency >99.6%

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MimoSTAR3 – large area prototype Extension of MimoSTAR 2 AMS 0.35 Analog readout Pixel array 320 × 640 30 µm pixel pitch 2 parallel outputs 10 parallel sub-arrays Integration time 2 ms
Low fabrication yield in the first run
Dead pixels in the center of the sensors
Mean pixel values
Edge Center
No contact
Two fix the problem 2 masks were modified to reduce:
– Surface of active area – Density of metal 1 layer
Yield improved from <20% for old layout to >80% for the new layout

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Transition from analog to binary readout
Typical sensor readout– Raster scan – Charge integration time = array
readout time– Multiplexing sub-arrays decreases
integration time
Column parallel readout architecture– All columns are readout in parallel and
then multiplexed to one output– Charge integration time = column
readout time
On-chip data sparsification overcomes limitation in the readout speed
Analog readout – simpler architecture but ultimately slower readoutDigital readout – offers increased speed but requires on-chip discriminators or ADCs

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Prototypes Mimosa 8 and Mimosa 16 developed by IPHC and DAPNIA feature binary readout – a major step towards on-chip data sparsificaiton
VREF1 PWR_ON
MOSCAP
RESET
VREF2 VDD
PWR_ON
VR1VR2
READ
CALIB
ISF
PIXEL
COLUMN CIRCUITRY
OFFSET COMPENSATED COMPARATOR
(COLUMN LEVEL CDS)
SOURCEFOLLOWER
latch
Q
Q_
READ
READ
+
+
+
+
+ +
-
- -
-
LATCH
CALIB
READ
Sensor with binary readout
Mimosa 8/16 (TSMC 0.25/AMS 0.35) 128 × 32 pixels with 25 μm pitch In-pixel CDS Column level offset-compensated discriminators
Mimosa 8/16 pixel and column level circuitry
Y. Degerli et al, IEEE TNS, vol 53, no 6, 2006, pp 3949 - 3955 Y. Degerli et al, IEEE TNS, vol 52, no 6, 2005, pp 3186 - 3193

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Mimosa 16 performance
Meets PIXEL requirements
extension of Mimosa 16 to full reticle– Integration time of 640 µs– Continuous binary readout of all pixels
This chip is ready for production
Phase-1 prototype for PIXEL

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Final sensor for the PIXEL detector Phase-1 combined with on-chip zero
suppression
On-chip zero suppression has been successfully implemented and tested at IPHC as a small size prototype
~ 3 mm
The prototype zero-suppression circuitry works up to 115 MHz
Radiation hardness tests are in preparation
S0 S1 S15
N Hits N Hits
-
Col
umn
-0
Col
umn
-63
Col
umn
-0
Col
umn
-63
Col
umn
-63
Col
umn
-0
A/D A/D… A/D A/D A/D A/D
…
…
…
…
…
…
…
…
S1 S2 Sn
Memory with 600 states stored and serial transmission
Col
umn
-0
Col
umn
-63
Col
umn
-0
Col
umn
-63
Col
umn
-63
Col
umn
-0
A/D A/D… A/D A/D A/D A/D
…
…
…
…
…
…
…
…
(6 states)
Priority Look-Aheadalgorithm
Selection of 9 states among n x 6 states for each row
(6 states)
Priority Look-Aheadalgorithm
(6 states)
Priority Look-Aheadalgorithm
Memory 1
Memory 2
core of the zero suppression

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PIXEL detector readout Coupled nature of readout and sensor development
2011 (planned)
Install final detector
2010 (planned)
Install 3-module engineering prototype (based on Phase1)
First prototypes in hand and tested
Pixel
Sensors CDS
ADC Data
sparsification
readout
to DAQ
analogsignals
Complementary detector readout
MimoSTAR sensors 4 ms integration time
Ultimate sensors < 200 μs integration time
analog
digital digital signals
Disc.
CDS
Phase-1 sensors 640 μs integration time

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Telescope and readout prototype in STARLeo Greiner presented MimoSTAR2-based telescope prototype with prototype PIXEL readout system at Vertex 2007

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Readout system - physical layout
10 parallel independent readout modules (4 ladders per module)

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LVDS data transfer The final detector system is expected
to have LVDS data transfers at the maximum rate of 160 MHz
Ladder mock-up with 1-to-4 LVDS fanout buffers
Mass termination board + LU monitoring
Virtex-5 based RDO system with RORC link to PC
Virtex-5 individual IODELAY was adjusted for each channel
Buffered path 160 MHz 2.3 m cables
Bit Error Rate < 10-14
42 AWG wires
24 AWG wires

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Summary Full reticle 2 × 2 cm Phase-1 should be available at the end of this
year – detector engineering prototype (3/10 of the complete detector) will be
constructed and should allow to perform physics measurements in 2010
The readout concept has been validated with LVDS readout test and the full readout system production prototypes are being developed
New prototypes with on-chip discriminators are capable of the required S/N ratio for >99% detection efficiency but with a limited safety margin
Limited S/N makes the sensors susceptible to radiation damage– ionizing damage increase of leakage current and noise– non-ionizing damage charge losses in bulk
Resistance to radiation damage level that can be expected in the STAR environment with the final luminosity (8×1027 /cm2/s ) is being carefully studied.

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Possible significant improvement of radiation tolerance can be achieved with different fabrication technologies:
– Graded substrate and deep p-implants simulations indicate reduction of charge collection time from ~100
ns to ~20 ns First prototypes are under test
– High resistivity substrate On-going investigation of technology with pin diodes 1 k cm would allow ~10 µm depletion of epi layer (~14 µm total
thickness) with 3-5 V A prototype sensor has been submitted for production Results should be available next year – in time for Vertex 2009
On-going and future development

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Thank you for your attention

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Backup slides

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~100 µm
Extend the physics reach of the STAR experiment for precision measurement of the yields and spectra of particles containing heavy quarks:
– Study charm and beauty energy losses to test pQCD in a hot and dense medium at RHIC
– Charm flow to test thermalization at RHIC– Direct reconstruction of charm
Detect charm decays with small cτ, including D0 and Λc+
Method:
Heavy Flavor Tracker @ STAR
Resolve displaced vertices (>60 µm)

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MimoSTAR3 – large area prototype Extension of MimoSTAR 2 AMS 0.35 Analog readout Pixel array 320 × 640 2 parallel outputs 10 parallel sub-arrays Integration time 2 ms
10.7 mm
19.3 mm
Low fabrication yield in the first run
Dead pixels in the center of the sensors
Mean pixel values

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MimoSTAR3 – low yield investigation
No problems were observed on the small surface area prototypes on the same wafer
Vias are the same size Different distance between metal layers
Corner Center
Metal 4
Metal 3
Metal 2
Metal 1
No contact

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MimoSTAR3 - layout modification
Yield improved from <20% for old layout to >80% for the new layout
old layout vs.
new layout
2 masks were modified to reduce:– Surface of active area – Density of metal 1 layer (GND)

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Readout path
10 parallel independent readout modules

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Fast, column-parallel architectureVREF1 PWR_ON
MOSCAP
RESET
VREF2 VDD
PWR_ON
VR1VR2
READ
CALIB
ISF
PIXEL
COLUMN CIRCUITRY
OFFSET COMPENSATED COMPARATOR
(COLUMN LEVEL CDS)
SOURCEFOLLOWER
latch
Q
Q_
READ
READ
+
+
+
+
+ +
-
- -
-
LATCH
CALIB
READ
PWR_ON
RESET
READ
CALIB
LATCH
CDS at column level (reduces Fixed Pattern Noise below temporal noise)
122 , inrefCsfrefCALIB VVVVVV
)( 122
122
2
ininsfref
inrefsfin
sfCinREAD
VVVV
VVVV
VVVV
VREAD,CALIB
VCVin1,2
12122
2_ 1 offRREADoffREADS VVVAV
AA
V
READSoffoffRCALIBout VVVVVAAV _21112
1212 RRREADCALIBout VVVVAAV
VS_READ
A1 Voff1 A2, Voff2
Developed in IPHC - DAPNIA collaboration

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LVDS data transfer – test results
Buffered path 160 MHz 1.0 m cables Un-buffered path 160 MHz 1.0 m cables
Buffered path 160 MHz 2.3 m cables
Bit Error Rate < 10-14