vol 1 - xps of elements & native oxides - 1999

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© 1999 XPS International, Inc. Handbook of The Elements and Native Oxides Handbooks of Monochromatic XPS Spectra Volume 1 - The Elements and Native Oxides by B. Vincent Crist, Ph.D.

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Page 1: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. Handbook of The Elements and Native Oxides

Handbooks of MonochromaticXPS Spectra

Volume 1 - The Elements and Native Oxides

by

B. Vincent Crist, Ph.D.

Page 2: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. Handbook of The Elements and Native Oxides

Copyright © January 1999B. Vincent Crist

Published by XPS International, Inc,3408 Emerald Drive, Ames, Iowa, 50010 USA

XPS International Inc., 3408 Emerald Drive, Ames, Iowa, 50010 USATel & Fax: -1-515-233-4504E-mail: [email protected] Web Site: http://www.xpsdata.com

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Handbook of Monochromatic XPS SpectraVolume 1 – The Elements

Select an Element to see itsAtom % Table and Spectra.

C (1s) BE = 285.0 eVCharge Referencing

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Handbook of Monochromatic XPS SpectraVolume 2 – Native Oxides

Select an Element to see itsAtom % Table and Spectra.

ChargeNeutralizer OFF

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© 1999 XPS International, Inc. Handbook of The Elements and Native Oxides

TABLE OF CONTENTS

Alphabetical List of XPS Spectra in Volume One (based on Chemical Abbreviations) ..................................vIntroduction……………………………………………………………………………………………………… xOrganization and Details of Spectral Sets...……………………………………………………………………xi

A. Organization of Spectra ...............................................................................................................................xiB. Contents of Each Set of Spectra ..................................................................................................................xiC. Philosophy of Data Collection Methods.....................................................................................................xiiD. Peak-Fitting (Curve-Fitting) of High Energy Resolution Spectra .............................................................xiiE. Charge Compensation of Insulating Materials ......................................................................................... xiiiF. Abbreviations Used ................................................................................................................................... xiii

Instrument and Analysis Details used to make Spectral Data ………………………………………………xivA. Instrument Details ………………………………………………………………………………………xivB. Experimental Details. ……………………………………………………………………………………xvC. Data Processing Details …………………………………………………………………………………xviD. Sample Details . …………………………………………………………………………………………xvi

Sources of Elements and Chemical Compounds .…………………………………………………xviSource of Polymer Materials.....……..……………………………………………………………xviiSource of Alloys. …………………………………………………………………………………xviiSource of Semi-Conductor Materials..……………………………………………………………xviiSources of Commercially Pure Binary Oxides .…………………………………………………..xviiPowdered Samples Pressed into 3 mm Diameter Pellets....………………………………………xviiBenefits of Pressing Powders into Pellets (increased count rate and simple charge control)……xviiiProblems Caused by Pressing Samples into Pellets……………………………………………...xviii

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© 1999 XPS International, Inc. Handbook of The Elements and Native Oxides

Solution to Pressure Induced Contamination of Pellets…………….……………………………xviiiSource of Pellet Press Equipment………………………….………………………………………xix

E. Energy Resolution Details……………………………………………………………………………………xixF. Energy Scale Reference Energies and Calibration Details…………………………………………………....xx

Reference Energies of Adventitious Hydrocarbon Contaminants…………………………………...… xxInstrument Stability and Long Term Energy Scale Calibration . ………………………………………xxi

G. Electron Counting and Instrument Response Function Details ..……………………………………………xxiInstrument Response Function …………………………………………………………………………xxiSignal / Background Ratios for Ion Etched Silver (Ag) using a 250 x 1000 µ X-ray Beam………...…xxiLens Voltage Settings Available via Software under Instrument Calibration Routines ………………xxii

H. Effects of Poorly Focusing the Distance between the Sample and the Electron Collection Lens. …………xxiiI. Quantitation Details and Choice of "Sensitivity Exponent" ..………………………………………………xxiiJ. Crude Tests of the Reliability of Scofield Based Relative Sensitivity Factors .……………………………xxiiiK. Traceability Details... ………………………………………………………………………………………xxiii

Traceability of Reference Binding Energies (Calibration) ...…………………………………………xxiiiTraceability Transfer from Pure Metals to Non-Conductive Binary Oxides ... ………………………xxivTraceability of Instrument Throughput Function and Relative Sensitivity Factors (RSFs)…………..xxivTraceability of Sample Purity....………………………………………………………………………xxiv

L. Reference Papers Describing the Capabilities of X-Probe, M-Probe, and S-Probe XPS Systems…………xxvM. Monochromatic XPS Spectra of The Elements and Native Oxides

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© 1999 XPS International, Inc. Handbook of The Elements and Native Oxides

THE ELEMENTS

Ago (Silver metal, Z=47)..........................................................................................................................1Alo (Aluminium metal, Z=13).................................................................................................................5Ar (+) (Argon implanted in carbon, Z=18)..................................................................................................9Aso (Arsenic metal, Z=33).....................................................................................................................13Auo (Gold metal, Z=79) .........................................................................................................................17Bo (Boron, Z=5) ...................................................................................................................................22Ba (+) (Barium in barium carbonate, Z=56)..............................................................................................26Beo (Beryllium metal, Z=4)...................................................................................................................30Bio (Bismuth metal, Z=83)....................................................................................................................34Br (-) (Bromine in potassium bromide, Z=35) .........................................................................................38Co (Carbon, Z=6) .................................................................................................................................43Cao (Calcium metal, Z=20)....................................................................................................................47Cdo (Cadmium metal, Z=48) .................................................................................................................52Ce (4+) (Cerium in cerium oxide, Z=58).....................................................................................................56Cl (-) (Chlorine in sodium chloride, Z=17)..............................................................................................60Coo (Cobalt metal, Z=27) ......................................................................................................................65Cro (Chromium metal, Z=24)................................................................................................................69Cs (+) (Cesium in cesium chloride, Z=55) ................................................................................................73Cuo (Copper metal, Z=29) .....................................................................................................................77Dyo (Dysprosium metal, Z=66) .............................................................................................................81Ero (Erbium metal, Z=68) .....................................................................................................................85

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© 1999 XPS International, Inc. Handbook of The Elements and Native Oxides

THE ELEMENTS (continued)

Eu (3+) (Europium in europium oxide, Z=63) ............................................................................................89F (-) (Fluorine in lithium fluoride, Z=9).................................................................................................94Feo (Iron metal, Z=26)...........................................................................................................................98Gao (Gallium metal, Z=31) ..................................................................................................................102Gdo (Gadolinium metal, Z=64) ............................................................................................................107Geo (Germanium metal, Z=32) ............................................................................................................111Hfo (Hafnium metal, Z=72).................................................................................................................115Hgo (Mercury metal, Z=80) .................................................................................................................119Hoo (Holmium metal, Z=67)................................................................................................................123I (-) (Iodine in potassium iodide, Z=53) ..............................................................................................126Ino (Indium metal, Z=49)....................................................................................................................131Iro (Iridium metal, Z=77) ...................................................................................................................135K (+) (Potassium in potassium chloride, Z=19).....................................................................................138Kr (+) (Krypton implanted into carbon, Z=36) .......................................................................................143La (3+) (Lanthanum in lanthanum oxide, Z=57).......................................................................................146Li (+) (Lithium in lithium hydroxide, Z=3) ............................................................................................151Luo (Lutetium metal, Z=71) ................................................................................................................155Mgo (Magnesium metal, Z=12) ............................................................................................................159Mno (Manganese metal, Z=25).............................................................................................................163Moo (Molybdenum metal, Z=42) .........................................................................................................167N (3-) (Nitrogen in boron nitride, Z=7)...................................................................................................171Na (+) (Sodium in sodium chloride, Z=11) .............................................................................................175

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© 1999 XPS International, Inc. Handbook of The Elements and Native Oxides

THE ELEMENTS (continued)

Nbo (Niobium metal, Z=41).................................................................................................................180Ndo (Neodymium metal, Z=60) ...........................................................................................................184Nio (Nickel metal, Z=28) ....................................................................................................................188O (2-) (Oxygen in lithium oxide, Z=8)....................................................................................................192Po (Phosphorus, Z=15) ......................................................................................................................196Pbo (Lead metal, Z=82) .......................................................................................................................200Pdo (Palladium metal, Z=46)...............................................................................................................204Pro (Praseodymium metal, Z=59) .......................................................................................................208Pto (Platinum metal, Z=78).................................................................................................................212Rb (+) (Rubidium in rubidium acetate, Z=37).........................................................................................216Reo (Rhenium metal, Z=75) ................................................................................................................220Rho (Rhodium metal, Z=45) ................................................................................................................224Ruo (Ruthenium metal, Z=44) .............................................................................................................228So (Sulfur, Z=16) ...............................................................................................................................232Sbo (Antimony metal, Z=51)...............................................................................................................237Sco (Scandium metal, Z=21) ...............................................................................................................241Seo (Selenium metal, Z=34) ................................................................................................................245Sio (Silicon, Z=14)..............................................................................................................................249Smo (Samarium metal, Z=62)...............................................................................................................253Sno (Tin metal, Z=50)..........................................................................................................................257Sr (2+) (Strontium in strontium carbonate, Z=38)....................................................................................261

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© 1999 XPS International, Inc. Handbook of The Elements and Native Oxides

THE ELEMENTS (continued)

Tao (Tantalum metal, Z=73)................................................................................................................265Tbo (Terbium metal, Z=65) .................................................................................................................269Teo (Tellurium metal, Z=52) ...............................................................................................................273Tio (Titanium metal, Z=21) ................................................................................................................277Tlo (Thallium metal, Z=81) ................................................................................................................281Tmo (Thulmium metal, Z=69) ..............................................................................................................285Vo (Vanadium metal, Z=23) ..............................................................................................................289Wo (Tungsten metal, Z=74) ................................................................................................................293Xe (+) (Xenon implanted in carbon, Z=54) .............................................................................................xxxYo (Yttrium metal, Z=39) ..................................................................................................................297Ybo (Ytterbium metal, Z=70)...............................................................................................................301Zno (Zinc metal, Z=30)........................................................................................................................304Zro (Zirconium metal, Z=40) ..............................................................................................................308

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© 1999 XPS International, Inc. Handbook of The Elements and Native Oxides

NATIVE OXIDES

AgOx naturally formed, native oxide of Silver.......................................................................................313AlOx naturally formed, native oxide of Aluminium..............................................................................318AsOx naturally formed, native oxide of Arsenic....................................................................................323BOx naturally formed, native oxide of Boron ......................................................................................328BeOx naturally formed, native oxide of Beryllium ................................................................................333BiOx naturally formed, native oxide of Bismuth...................................................................................338CdOx naturally formed, native oxide of Cadmium.................................................................................343CoOx naturally formed, native oxide of Cobalt......................................................................................348CrOx naturally formed, native oxide of Chromium...............................................................................353CuOx naturally formed, native oxide of Copper ....................................................................................358FeOx naturally formed, native oxide of Iron..........................................................................................363GaOx naturally formed, native oxide of Gallium ...................................................................................368GeOx naturally formed, native oxide of Germanium .............................................................................373HfOx naturally formed, native oxide of Hafnium ..................................................................................378InOx naturally formed, native oxide of Indium.....................................................................................383IrOx naturally formed, native oxide of Iridium ....................................................................................388MgOx freshly formed, native oxide of Magnesium.................................................................................393MnOx naturally formed, native oxide of Manganese ..............................................................................399MoOx naturally formed, native oxide of Molybdenum...........................................................................404NbOx naturally formed, native oxide of Niobium ..................................................................................409NiOx naturally formed, native oxide of Nickel......................................................................................414PbOx freshly formed, native oxide of Lead............................................................................................419

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© 1999 XPS International, Inc. Handbook of The Elements and Native Oxides

NATIVE OXIDES (continued)

PdOx naturally formed, native oxide of Palladium ................................................................................424PtOx naturally formed, native oxide of Platinum..................................................................................429ReOx naturally formed, native oxide of Rhenium..................................................................................434RhOx naturally formed, native oxide of Rhodium .................................................................................439RuOx naturally formed, native oxide of Ruthenium ..............................................................................444SbOx freshly formed, native oxide of Antimony....................................................................................448ScOx naturally formed, native oxide of Scandium ................................................................................452SeOx naturally formed, native oxide of Selenium .................................................................................457SiOx naturally formed, native oxide of Silicon.....................................................................................462SnOx naturally formed, native oxide of Tin...........................................................................................467TaOx naturally formed, native oxide of Tantalum.................................................................................472TeOx naturally formed, native oxide of Tellurium ................................................................................477TiOx naturally formed, native oxide of Titanium..................................................................................482TlOx freshly formed, native oxide of Thallium .....................................................................................487VOx freshly formed, native oxide of Vanadium ...................................................................................492WOx naturally formed, native oxide of Tungsten .................................................................................497YOx freshly formed, native oxide of Yttrium .......................................................................................501ZnOx naturally formed, native oxide of Zinc .........................................................................................506ZrOx naturally formed, native oxide of Zirconium ...............................................................................511

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© 1999 XPS International, Inc. Handbook of The Elements and Native Oxides

INTRODUCTION

This handbook contains wide scan spectra and narrows scan spectra from the elements and native oxides of theelements. The elements have been analyzed under conditions that have maximized the accuracy of the bindingenergies. The binding energies for the pure elements are referenced to the reference energies recommended bythe National Physical Laboratory in the UK. Please refer to section "F" (Energy Scale Reference Energies andCalibration Details) for more details about calibration.

“The Elements” Section:

Includes wide scan survey spectra , high energy resolution spectra, and valence band spectra for the elements Ag, Al, Ar(+), As, Au, B, Ba(+), Be, Bi, Br(-), C, Ca(2+), Cd, Ce(4+), Cl(-), Co, Cr, Cs (+), Cu, Dy, Er, Eu, F(-), Fe, Ga, Gd, Ge, Hf, Hg, Ho, I(-), In, Ir, K(+), La(3+), Li(+), Lu, Mg, Mn, Mo, N(3-), Na(+), Nb, Nd, Ni, O(2-), P, Pb, Pd, Pr, Pt, Rb(+), Re, Rh, Ru, S, Sb, Sc, Se, Si, Sm, Sn, Sr(2+), Ta, Tb, Te, Ti, Tl, Tm. V, W, Y, Yb, Zn, and Zr. If the element is part of insulating chemical compound, then a C (1s) spectrum is also provided to allow the user tocorrect for sample charging. All narrow scan spectra are peak-fitted to reveal FWHM, peak asymmetry, and peakseparation for spin-orbit pairs. The strong signals observed in the wide scan survey spectra are labeled and tabulatedtogether with rough BE values of those strong signals. The details of the experimental protocol used to produceeach these spectra are provided in the "Instrument and Analysis Details" section. All pure elements, except forSilicon and Selenium, were ion etched prior to analysis.

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© 1999 XPS International, Inc. Handbook of The Elements and Native Oxides

The “Native Oxides” Section:

Includes wide scan survey spectra, high energy resolution spectra for principal signals of each element, carbon (1s) high energy resolution spectra, and oxygen (1s) high energy resolution spectra found in/on naturally formed nativeoxides of the elements Ag, Al, As, B, Be, Bi, Cd, Co, Cu, Fe, Ga, Ge, Hf, In, Ir, Mg, Mn, Mo, Nb, Ni, Pb, Pd, Pt,Re, Rh, Ru, Sb, Sc, Se, Sn, Ta, Te, Ti, Tl, V, W, Y, Zn, and Zr. Atomic percentage based tables of surfacecomposition, which reveal the natural oxidative tendencies of the elements and the tendencies of these elementsto capture various gases from the air and/or various contaminants introduced to the surface from handling by theoriginal chemical producers. To enhance traceability and to try to determine chemical shifts it was deemedessential to observe the pure metal signal for a set of spectra to be included in this Native Oxide section. Thesamples used for these measurements were, in general, naturally formed native oxides that were analyzed asreceived without any treatment of any kind. All of these samples had been stored in a set of drawers which werenot air-tight and so the samples were exposed to the normal atmosphere of a laboratory for many months or years.

Note: Most of the native oxides are naturally formed native oxides, but a few of the native oxides are actually“freshly formed” native oxides that were produced by scraping the surface of the oxidized metal with a cleanknife and exposing the freshly cleaned surface to the normal atmosphere of the laboratory for a time periodbetween 5 minutes and several days. This scraping was done because the naturally formed native oxide orcarbonate film was thick enough to hide the pure metal signal when the samples were analyzed by XPS. Thismethod produces freshly formed native oxides which have probably not reached a thermodynamically stable state.

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© 1999 XPS International, Inc. Handbook of The Elements and Native Oxides

ORGANIZATION AND DETAILS OF SPECTRAL SETS

Organization of Spectra

A set of spectra for a particular chemical is located by looking for the chemical formula abbreviation written inthe upper right hand corner of each page. For the element called “aluminium (Al)" the user will find its chemicalabbreviation “Al" in the upper right corner of the pages that belong to that set of data and spectra. The spectra areorganized by using the chemical abbreviation. This means that spectra for "antimony (Sb)" can be found by looking for the chemical formula: “Sb".

Contents of Each Set of Spectra

The spectra are presented exactly as printed by the Spectral Data Processor software which is provided in each XISpecMaster Data-Base system. The first page of a set includes the “Detailed Surface Composition Table” whichreports the peak assignments, binding energies, relative sensitivity factors, and Atom % abundance of each majorsignal contained in the wide scan survey spectrum for that chemical. In the title line of this first page the userwill find the full chemical name along with other basic information about the chemical, such as Formula Weight,Chemical Abstract Services number, common name, and the Latin language name of the element if available.

The second page of each set is the wide scan survey spectrum with peak labels for each of the strong signals.

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© 1999 XPS International, Inc. Handbook of The Elements and Native Oxides

Detailed information about the operating capabilities of the SSI systems and the instrument and analysisconditions used to collect these data are presented in the "Instrument and Analysis Details" section of this book.

The remaining pages of each set are the high energy resolution narrow scan spectra which were obtained bymeasuring the strongest signals found in the wide scan survey spectrum. These spectra include detailedpeak-fit results in a table and display the actual peak-fit results for each spectrum. The binding energiesof insulating materials are reported in both raw and corrected form. Based on our research we have useda 285.0 eV value for the C (1s) signal of hydrocarbons for charge referencing spectra. The FWHM values foreach peak of a high energy resolution spectrum is adjacent to the binding energy for that peak. The percentagenumbers given for each peak is a relative percentage that is based on the intensity of that signal only (It is not anatom % value).

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© 1999 XPS International, Inc. Handbook of The Elements and Native Oxides

Philosophy of Data Collection Methods

Our philosophy is to collect spectra under analysis conditions that are practical, readily reproduced, and typicallyused in laboratories that use monochromatic X-ray sources and work under real world practical analysisconditions. We have assumed that the most XPS laboratories need practical reference spectra and will not spendthe time or money to produce and to analyze pure, clean surfaces under ultimate energy resolution conditions.However, we did spend extra time to collect data with above average signal to noise (S/N) ratios which revealthe presence of minor components that might otherwise be missed. In the production of these spectra we didnot attempt to clean the surfaces of the native oxides or the insultors which would make charge referencing adifficult task. For practical reasons we used the C (1s) spectra from the naturally formed layer of adventitioushydrocarbons because that signal is the “de facto” standard for charge referencing insulating materials.

The spectral data contained within these handbooks are designed to assist engineers, scientists, analysts,theoreticians, and teachers who use XPS on an everyday basis under practical working conditions. We believethat these spectra will help XPS users to analyze industrial problems, gather reference data, perform basicresearch, test theories, and teach others. These spectra are designed to be practical tools for everyday use and were obtained under practical working conditions. No attempt was made to produce research grade spectra, but many of the spectra are actually research grade spectra because of the self-consistent methods used.

In the production of some spectra no attempt to produce a pure, clean surface, but some effort was made to producesurfaces with a minimum amount of natural surface contamination if needed. When ion etching was used to clean a material that contained more than one element, then ion etching was done with conditions that should minimizepreferential sputtering. For the spectra of pure elements, the surface was strongly ion etched.

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© 1999 XPS International, Inc. Handbook of The Elements and Native Oxides

Peak-Fitting (Curve-Fitting) of High Energy Resolution Spectra

Peak-fitting was performed by using the software provided with the Surface Science Instruments XPS system.That software allows the user to control the full width at half maxima (FWHM) value of any peak, the bindingenergy (BE) of any peak, peak areas, the ratio of two peak areas, the energy difference between two peakmaxima, the shape of a peak as a sum-function of Gaussian and Lorentzian peak shapes in any peak, and thepercentage of asymmetry in any peak.

By empirically peak-fitting the spectra from large sets of closely related materials in a trial and error method andanalyzing the trends, it was possible to recognize several fundamental peak-shape and peak-fitting parameters forpure elements, binary oxides, polymers, and semiconductors. We used those empirical results to guide ourefforts to peak-fit many of the spectra which had complicated peak shapes. In some cases we used the theoreticalratio of spin-orbit coupled signals to assist the peak-fitting of some spectra and also the energy interval betweenspin-orbit coupled signals that were derived from pure element spectra. No attempt was made to fit the spectrain accordance with theoretical expectations or calculations.

A reduced “chi-squared” value, which indicates the goodness of a peak-fit, was used to determine if a peak-fitwas reasonable or not. Based on practical experience a “chi-squared” value between 1 and 2 implies a relativelygood peak-fit. A “chi-squared” value between 2 and 4 implies that the fit has not yet been optimized. A “chi-squared” value larger than 4 implies that one or more signals may be missing from the peak-fit effort.

A Shirley-type baseline was used for all peak-fits. Peak shapes for the main XPS signals obtained from chemicalcompounds (e.g. oxides, halides, etc.) were typically optimized by using a Gaussian:Lorentzian ratio between80:20 and 90:10. For pure metals, the Gaussian:Lorentzian ratio for the main XPS signals was normally between

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© 1999 XPS International, Inc. Handbook of The Elements and Native Oxides

50:50 and 70:30. The main XPS signals for semi-conductor materials usually required a Gaussian:Lorentzianpeakshpae between 70:30 and 80:20.

From the peak-fitting of the binary oxides, we have observed that FWHM for the C (1s), O (1s) and the mainmetal signal from the binary oxide are usually in range 1.0-1.4 eV. This trend helped us to decide if we had goodcharge compensation.

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© 1999 XPS International, Inc. Handbook of The Elements and Native Oxides

Charge Compensation of Insulating Materials

Charge compensation of insulating materials was normally handled by using the patented SSI mesh-screentogether with a low voltage flood gun of electrons which used an acceleration voltage that was adjusted to 3-4 eVfor optimum results. The mesh-screen device uses a 90% transmission electro-formed mesh made of nickelmetal that is supported above the surface of the sample by mounting the mesh on a conductive metal frame that isgrounded to the sample mount. To achieve good charge compensation the mesh-screen is positioned so that thedistance between the mesh and the surface of the sample is between 0.5 - 1.0 mm. When the distance betweenthe mesh-screen and the surface of the sample is greater than 1.2 mm, the usefulness of the mesh screen floodgun system was normally null.

The mesh-screen is understood to function as an electron cut-off lense with some tendency to allow incomingflood gun electrons to focus onto the area being irradiated with monochromatic X-ray beam. This occurs becausethe X-ray beam does not have a uniform flux density over the area of the beam. In effect, the mesh-screen produces a nearly uniform electric potential at the surface of the sample and allows incoming flood-gun electrons to pass through whenever they are needed (on demand).

The mesh-screen was used on every insulating material except for a few materials that were analyzed before theflood gun mesh-screen method was developed.

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© 1999 XPS International, Inc. Handbook of The Elements and Native Oxides

Abbreviations Used

Due to the limited space provided to describe each sample in each electronic data-file, it was necessary to usevarious abbreviations. The abbreviations are:

scr = screen used for charge compensationscrn = screen used for charge compensationTOA = take-off-angle for the electronsAldr = Aldrich Chemical Co.RMC = Rare Metallics Co.SPP = Scientific Polymer Products Co.MS Co. = Metal Samples CompanyFG = flood gun,mesh = mesh-screen used for charge control,1mm=1 mm height used for the mesh-screen,semi-con = semi-conductive behaviorconduc, = conductive behaviorTech = technical grade purity,pellet = sample pressed into pellet form by pellet press used to make Infrared KBr pellets,plt = pelletpel = pellet

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© 1999 XPS International, Inc. Handbook of The Elements and Native Oxides

INSTRUMENT AND ANALYSIS DETAILS USED TO MAKE XPS SPECTRA

A. Instrument Details (ref 1)

Manufacturer: Surface Science Instruments (SSI)Model: X-Probe

S-Probe (upgraded from M-Probe model 2703)Software Version; 1.36.05 (Compiled in MS-DOS "C" version 6.0)

Analyzer Type: Fixed Analyzer Transmission (FAT)Fixed Pass Energy = Constant Analyser Energy (CAE)180° Hemi-spherical (truncated)

Input Lens Field of View: 30° for sample normal to lens axis (1" diameter port)(always larger than X-ray beam; retarding potential scanned)

X-ray Type: Al° monochromatic (one 2 " diameter thin natural SiO2crystal wafer glued onto Zerodur substrate heated to 65° C)

X-ray kV and mA Emission: 10 KV, 1.5-22.0 mA (depending on spot size used)X-ray Energy Defined as: 1486.7 eV (8.3393 Å), Bragg Angle=78.5°

Excitation Source Window: 0.6 µ aluminum in S-Probe (10µ mylar i n X-Probe)Angle of X-ray Incidence: α = 71° (relative to sample normal)Electron Emission Angle: β = 0° (relative to sample normal)

Angle Between X-ray Axis andElectron Analyzer Axis: φ =71° (fixed, non-variable)

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© 1999 XPS International, Inc. Handbook of The Elements and Native Oxides

Pass Energy of Analyzer: 150 V for Resolution 4 setting100 V for Resolution 3 setting 50 V for Resolution 2 setting 25 V for Resolution 1 setting

Type & Size of Input Slit: Fixed (2 mm X 35 mm); magnetic compressionType & Size of Output Slit: None (dispersion limited by hemisphere voltages)

Electron Collection LensField of View: ~ 1 mm

2 for a take off angle = 0° at 1000 eV KEElectron Collection Lens Efficiency: 7% over 2π steradians

Sample Surface to Tip of Electron Collection Lens Distance: ~33 mm

Crystal to Sample Surface Distance: ~190 mmCrystal to X-ray Anode Distance: ~190 mmTrue Background Count of Noise: <10 electrons/second at -50 eV (shot noise limited)

Detector Type: SSI Position Sensitive Detector (PSD), resistive anode,40 mm X 40 mm, electronically defined as 128 active channelswith a maximum electron count rate of 1,000,000

Dead Time: zero (unless ion etching pure element while collecting data)Base Pressure: 4.0 x 10-10 torr

Normal Operating Pressure: 1.6 x 10-9 torrFWHM Diffracted by Natural SiO2: ~0.25 eV

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© 1999 XPS International, Inc. Handbook of The Elements and Native Oxides

Power Settings: 200 Watts in a 250 x1100 µ X-ray beam100 Watts in a 150 x 800 µ X-ray beam 45 Watts in a 80 x 350 µ X-ray beam 15 Watts in a 40 x 250 µ X-ray Beam

X-ray Induced Current: 1.1 x 10-9 amps for a 600 µ spot in X-ProbeApproximate True X-ray Power : ~6 x 10-6 W in a 600 µ spot

Approximate True X-ray Irradiance: ~8 W/m2

Approximate True X-ray Photon Flux: ~7 x 109 photons/sec

B. Experimental Details

Electron Take-Off-Angle: 90° relative to sample surface (unless otherwise reported)Pass Energies Used: Wide scans were done at PE = 150 eV

Narrow scans were normally done at PE = 50 eVValence band scans were done at PE=150 eV

X-ray Beam Size Used: Wide scans: 250 x 1500 µ ellipse (at 90° TOA)(for S-Probe) 250 x 1100 µ ellipse (at 35° TOA)

Narrow Scans: 250 x 1500 µ ellipse (at 90° TOA) 150 x 1000 µ ellipse (at 90° TOA)

SSI Mesh-Screen: A 85% transmission (20 µ diameter wire with 200 µspacing) nickel metal mesh screen was adhered toa small 25 mm x 25 mm x 1.5 mm (W x L x H)aluminum plate over a 20 mm x 20 mm aperture.

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The mesh-screen was placed over all oxide samplesso that the distance between the sample surfaceand the mesh-screen was <1.0 mm but >0.3 mm.

Dwell Time (counting time): 200 milliseconds/channel (usual setting)Data Transfer Time: 4 milliseconds

Max. Number of Channels: 5000 (channels = data points)Scan Time for One Wide Scan: ~ 3.5 minutes (using 1024 data points)

Scan Time for One Narrow Scan: ~100 seconds (using 256 data points)Energy Range: -100 to +1400 eV (BE range)

Typical Step Size: 0.1 eV/step (i.e. 0.1 eV/data point)

C. Data Processing Details

Baseline Subtraction: None, unless S/BG gave a small display. When thebaseline was removed, the intensity of the lowestpoint was subtracted from all points.

Data Smoothing: NoneEnergy Shifting: None

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D. Sample Details (for Volumes 1-5)

The "Description" given on each XPS spectrum reports the empirical elemental formula for the oxide,purity, source, production lot number, a note, if appropriate, about being conductive or semi-conductive, the abbreviation "scrn" which means that the SSI mesh-screen was used, and a number,and “90”: which means that a 90o electron take-off-angle used to collect the data for that sample.Abbreviations used in the description and their full meaning include: Aldr = Aldrich Chemical Co.,RMC = Rare Metallics Co., semi-con = semi-conductive behavior, scrn = SSI mesh-screen used, TOA= electron Take-Off-Angle, Tech = technical grade purity, pellet = sample pressed into pellet form, plt= pellet, pel = pellet, MS Co. = Metal Samples Company in Munford, Alabama USA (Tel 205-358-4202), SPP = Scientific Polymer Products Inc. in Ontario, New York state, USA (Tel 716-265-0413)

Sources of Elements and Chemical Compounds (for Volume 1)

The pure element samples were obtained from various sources without any specific information aboutsample purity so pure element samples must be assumed to be pure at the 99%+ level. The "halide" saltsused to produce spectra from gaseous or highly reactive elements were also obtained from varioussources. These halide samples were obtained as crystalline "windows" which are normally used inInfrared spectroscopy and have purities at the 99% level. The Boron Nitride (BN) sample was a whiteceramic electrical standoff which was fractured in air. The copper foil material, which was always usedto determine reference energies, were obtained as 99% pure foil which was designed as a multiplepurpose foil for use around the home. The gold ingot material, which was also used to determinereference energies was obtained as a 99.999% pure sample from Aldrich Chem. Co..

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Source of Polymer Materials (for Volume 4)

A special kit (#205) of the 100 polymer materials was obtained from Scientific Polymer Products, Inc.which is located at 6265 Dean Parkway, Ontario, New York, USA 13519 (Tel 716-265-0413).

Source of Alloys (for Volume 6)

A special kit of 54 metallic alloys was obtained from the Metal Samples Co., which is located at Route#1, Box 152, Munford, Alabama, USA, 36268 (Tel 205-358-4202). This kit includes a materialsanalysis report on each alloy in weight percents. The National Research Institute for Metals (NRIM) in Tsukuba, Japan has provided a series of various binary alloys made of AuCu and CoNi alloys.

Sources of Semi-Conductor Materials (for Volume 3)

Over the course of many years, many people in the Japanese semi-conductor business have givensamples of various semi-conductor materials in crystalline wafer form. Various samples were donatedby the Oki Electric Company, Mitsubishi Materials, Canon, and various universities. The source ofeach material is included with the individual sample descriptions whenever that information wasprovided.

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Sources of Commercially Pure Binary Oxide Samples (for Volume 2)

Most of the commercially pure binary oxides were purchased from the Aldrich Chem. Co.. Thepackages from the Aldrich Chemical Co. included an "Analytical Information" sheet which describedan ICP or AA analysis summary, a production lot number, the Aldrich product number, sample puritynumber (e.g. 99+%), sample appearance (color and physical form), date of chemical analysis, formulaweight and a label on the bottle that reports the melting point, toxicity, Chemical Abstracts registrynumber and density. The samples from Aldrich were generally quite pure at the surface. Other oxidesamples were obtained from either Cerac Inc. (USA) or Rare Metallics Co., Ltd. (Japan). The packagesfrom Cerac Inc. included a "Certificate of Analysis" with an ICP or AA analysis summary, aproduction lot number, a product number, purity (e.g. 99+%),and mesh size. The packages from RareMetallics Co. did not include analytical data reports, but instead had stock numbers and a puritystatement. Two samples (i.e. SiO2 natural crystal and Al2O3 fused plate) were obtained from in-housesources and do not have any purity reports.

Powdered Samples Pressed into 3mm Diameter Pellet

Until analyzed, all finely powdered samples were kept stored in their original glass or plasticcontainers, which were packaged inside of plastic-lined aluminum bags. Just prior to XPS analysis,each bottle was opened in the normal air of the room where the XPS system was kept, and a small 50-100 mg portion of the sample was removed via a clean nichrome spatula and placed in the compressionchamber of a hand-operated, stainless steel pellet press. All finely powdered samples were compressedwithout any chemical treatments, which, if done, may have introduced unusual contamination orproduced some change in the samples. The resulting pellets varied in thickness from 0.3 - 0.8 mm.

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To avoid iron and /or chromium contamination from the anvil, a thin sheet of paper was placed overthe sample in the compression chamber. Any powders, which were clumped together, were verygently pressed into a powder just prior to compression. To avoid unnecessary heat-induced oxidation,those samples which were hard and granular were very gently ground into a fine powder in a agatemarble mortar and pestle. As soon as each sample was removed from the compression chamber, it wasmounted onto silver (Ag°) paint inside of a 5mm wide round brass boat which was 1.3 mm in height.Silver paint was used so that conductive oxides could behave as true conductors thereby providing trueelectron binding energies for those oxides that were indeed conductive. In general, each oxide wasexposed to room air for <15 min..

Benefits of Pressing Powders into Pellets (increased counts and simple charge control)

A comparison of the electron counts obtained from powdered samples pressed onto double-sidedadhesive tape and positioned at a 35° electron take-off-angle with the electron counts obtained fromhand-pressed glossy or semi-glossy pellets positioned at a 90° electron take-off-angle (TOA) revealedthat a pellet at a 90° electron TOA produces 3-5 times higher electron counts than a powdered samplepressed onto double-sided tape at a 35° electron TOA.By pressing the finely powdered oxides into pellets, it was also found the surface charging behavior ofthese glossy or semi-glossy samples was very easy to control by using the mesh-screen electron flood-gun combination with the flood gun set to 4-6 eV acceleration energy and approximately 0.5 mAfilament current.

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Problems Caused by Pressing Samples into Pellets

By pressing the finely powdered oxides into pellets, the surface of the resulting samples were usuallysmooth enough to appear glossy or semi-glossy, but some samples had iron or chromiumcontamination which indicated that the oxide had undergone a pressure induced reaction with thestainless steel anvil. Very strong hand pressure caused some oxides to react with the stainless steelanvil, but medium hand pressure usually did not produce undesired iron and chromium contamination.All analyses that showed any unexpected contamination were repeated. Other forms of accidentalcontamination (chlorine or previously analyzed oxides) were caused by insufficient cleaning of thestainless steel anvil, which was normally cleaned with a metal polishing solution (Pikal) and rinsedwith distilled water and isopropanol. All analyses that showed any unexpected contamination wererepeated.

Solution to Pressure Induced Contamination of Pellets

Experiments on ways to avoid the pressure-induced iron or chromium contamination, produced pelletswith semi-smooth non-glossy surfaces which required more effort to produce good charge control.These non-glossy surfaces also gave electron count rates that were about 10-50% lower than the glossyor semi-glossy surfaces. As a result, it appears that very smooth surfaces, which appear glossy orsemi-glossy, greatly simplify efforts to control surface charging under the charge-control mesh-screenand also enhance the electron count rate by 10-50% more than a pellet that has a semi-rough non-glossy appearance.

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Extensive experiments on different methods to avoid contamination of the pellets revealed thatcontamination is minimized or avoided by using freshly cleaned aluminum foil as a "buffer" between theoxide powders and the metals in the steel anvil components. The aluminum foil, which is sold as akitchen wrap material, is cleaned with 100% isopropanol (isopropyl alcohol) just prior to use. The foil iscut to a size that is readily useful with the pellet press device after it is cleaned. Alternately, we have alsoused a type of "glycine" paper which is commonly used to as a paper to hold powders when weighing apowdered sample. This "weighing" paper is common in many chemical laboratories and can besubstituted for the aluminum foil whenever the pressing results with the aluminum foil produce undesiredbinding results. The glycine paper method sometimes introduces very small amounts of contaminantswhich produce a N (1s) and C (1s) signals. The amount of these contaminants is much smaller than theamount of contaminants that occur by simply pressing the powder without any sort of paper or aluminumfoil buffers.

Source of Pellet Press Equipment

"Qwik Handi-Press" from Barnes Analytical Division, Spectra-Tech, Inc.652 Glenbrook Road, Stamford,Connecticut, 06906 (FAX 203-357-0609) Kit: Part # 0016-111 to 0016-121 contains 1,3, and 7 mm die sets.Originally purchased through Aldrich Chem. Co. in 1989.

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E. Energy Resolution Details

Table 1: Experimentally Observed Relation Between Energy Resolution

Element (XPS signal)ResultingFWHM

ResolutionSetting

PassEnergy

X-raySpot Size

Si (2p3/2) crystal - fractured edge 0.38 eV 5 10 eV 40 x 250µSi (2p3/2) crystal - fractured edge 0.43 eV 1 25 eV 80 x 350µ

Au (4f7/2) foil - ion etched clean 0.64 eV 5 10 eV 250 x 1000µAu (4f7/2) foil - ion etched clean 0.79 eV 1 25 eV 250 x 1000µAu (4f7/2) foil - ion etched clean 0.86 eV 2 50 eV 250 x 1000µAu (4f7/2) foil - ion etched clean 1.40 eV 4 150 eV 250 x 1000µ

Ag (3d5/2) foil - ion etched clean 0.42 eV 5 10 eV 40 x 250µAg (3d5/2) foil - ion etched clean 0.64 eV 1 25 eV 40 x 250µAg (3d5/2) foil - ion etched clean 0.75 eV 2 50 eV 40 x 250µAg (3d5/2) foil - ion etched clean 1.00 eV 3 100 eV 40 x 250µAg (3d5/2) foil - ion etched clean 1.30 eV 4 150 eV 40 x 250µ

Cu (2p3/2) foil - ion etched clean 0.85 eV 5 10 eV 250 x 1000µCu (2p3/2) foil - ion etched clean 0.94 eV 1 25 eV 250 x 1000µCu (2p3/2) foil - ion etched clean 1.06 eV 2 50 eV 250 x 1000µ

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Cu (2p3/2) foil - ion etched clean 1.60 eV 4 150 eV 250 x 1000µCu (2p3/2) foil - ion etched clean 0.85 eV 5 10 eV 150 x 800µCu (2p3/2) foil - ion etched clean 0.96 eV 1 25 eV 150 x 800µCu (2p3/2) foil - ion etched clean 1.05 eV 2 50 eV 150 x 800µCu (3s) foil - ion etched clean 2.35 eV 2 50 eV 250 x 1000µ

Table 2: Theoretical Analyzer Resolution versus Pass Energy Settings

TheoreticalAnalyser

ResolutionPass Energy

EffectiveDetector Width

0.25 eV 25.0 eV 3.5 eV0.50 50 7.01.00 100 14.01.50 150 21.0

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F. Energy Scale Reference Energies and Calibration Details (ref. 8)

From May 1986 to January 1993Energy Scale Reference Energies: 932.47 eV for Cu (2p3/2) signal

122.39 eV for Cu (3s) signal 83.96 eV for Au (4f7/2) signal

Binding Energy Uncertainty: less than ±0.08 eVDigital-to-Analog (DAC) Conversion Setting: 163.88

After January 1993 (Based on NPL reference energies published in 1990)Energy Scale Reference Energies: 932.67 <±0.05 eV for Cu (2p3/2) signal

122.45 <±0.05 eV for Cu (3s) signal 83.98 <±0.05 eV for Au (4f7/2) signal

Observed Reference Energy: 75.01 <±0.05 eV for Cu (3p3) signalBinding Energy Uncertainty: less than ±0.08 eVDigital-to-Analog (DAC) Conversion Setting: 163.87

Note: NPL has recently revised reference energies to be 932.62 eV for Cu (2p3) and 83.96 eV for Au(4f7) for monochromatic systems using an electron take-off-angles of 45o

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Reference Energies of Adventitious Hydrocarbon Contaminants

From May 1986 to January 1993 the electron binding energy of adventitious hydrocarbons wasassumed to occur at 284.6 eV based on SSI and C. D. Wagner's research and recommendations.

Publications by P. Swift (Surface and Interface Analysis 4, 47 (1982), S. Kohiki and K. Oki (J.Electron Spectrosc. Related Phenom. 33, 375-380 (1984), and G. Barth, R. Linder and C. E. Bryson,III (Surface and Interface Analysis 11, 307-311 (1988) have shown that the electron binding energyfor various hydrocarbon contaminants and polymers is not necessarily a constant number. Research bythis author indicates that the electron binding energy for adventitious hydrocarbons lies somewherebetween 284.4 and 287.0 eV depending on the underlying (oxide) materials. By taking a simple averageof all available binding energies, the author has found that 285.0 eV is preferred for hydrocarbons onion etched metals where the hydrocarbon is many hours old. For naturally-formed native oxides thepreferred binding energy is 285.2 eV. Oxide based materials at the far left of the periodic element table(columns 1-4) tend to have higher values (285.2-287.0 eV, while most of the transition metal oxidescenter around 285.0 eV. Near the far right of the periodic table, the binding energy seems to rise to a285.2-286.5 eV range (columns 12-14) when the native oxides of those elements are analyzed.

In routine practice, this author prefers to use the 285.0 eV number. Some potential factors that maycause this rather large range of electron binding energies for adventitious hydrocarbon contaminationincludes the dipole moment at the surface of the oxide material, which is expected to be much strongerthan the dipole moment of a pure metal, and also, in the case of naturally formed native oxide films,the thickness of the native oxide, any physical or chemical treatments, the thickness of the adventitious

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hydrocarbon layer, and the type of instrument used to analyze the sample. The type of instrument beingused may cause different shifts in the observed binding energy of the adventitious hydrocarboncontamination because the source may or may not generate different amounts of low energy secondaryelectrons from the window that protects the X-ray source. The heat from the source and contaminationthat degases from a just turned on source may also influence the observed binding energy. Electronflood guns and implanted ions may or may not influence the binding energy of semiconductive materials.

Instrument Stability and Long Term Calibration

Initially each of the two SSI systems, that we have used, was calibrated 2-3 times per week because itsability to maintain accurate voltage settings was unknown. Once it was determined that the systemscould maintain reliable voltage settings for 1-3 months, it was decided that good calibration could bemaintained by checking and, if necessary, correcting the pass energies of the system on a 2-4 weekbasis. Each of the two SSI XPS instruments, that we have used, have been calibrated on a routine basisevery 2-4 weeks by using SSI's reference energies. By using this method over several years time, it wasfound that the maximum uncertainty (error in pass energies) was normally <±0.10 eV, but a few timesrose to ±0.15 eV or less. In a very rare case, the uncertainty rose to 0.20 eV. Long term use of the SSIsystems has shown that the DAC circuit does not change enough to be observed unless the roomtemperature changes by more than 10 degrees Centigrade. If the room temperature changes within a fewhours time by more than 10 degrees or the temperature of the DAC chip is changed by more than 10 degrees,then a >0.1 eV shift, which is much smaller than the reliability of almost all literature BEs, can beobserved. Variables, which seem to cause pass energy settings to change slightly, include building line-voltages, ion etching conditions, and the addition or removal of some electrical device.

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G. Electron Counting and Instrument Response Function Details

Instrument Response Functions (for the X-Probe System only) (ref 3, 4, 5)

Instrument Response Function: Q(E)=E+0.27 for 150 eV PE (ref.3)Instrument Response Function: Q(E)=E+1.0 for 50 eV PE (ref.3)

Signal/Background (S/BG) Ratios for Ion Etched Silver using a 250x1000 µ Spot*

Pass Energy 25 eV 50 eV 100 eV 150 eVS/BG ratio** >140 >110 >70 >50

* Using a 90° electron take-off-angle and a smooth Ag°/mylar film.** The S/BG ratio is a simple numerical ratio of electrons counts at the peak maximum relative to the average electron counts observed at approximately 10 eV lower BE.

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Lens Voltage Settings Available via Software under Instrument Calibration

Pass Energy* 29.6-29.8 54.7-54.9 105.1-105.3 155.9-156.2Detector Widths 3.743 7.486 14.954 22.297Sensitivity Exponent -0.1 0.3 0.7 1.1V1 Offset 30 55 105 155V1 Slope 0.600 0.611 0.676 0.709

* These pass energies include corrections for instrument work function. True pass energies were set to 25, 50, 100, and 150 eV ±0.1 eV.

H. Effects of Poorly Focussing the Distance between the Sample and theElectron Lens

If the focus distance between the sample surface and the electron collection lens is poorly adjusted,then the number of electron counts drops very quickly. A 0.5 mm error in focus produces a >300%decrease in counts, but does not produce any observable error in binding energies, which is a commonproblem with many XPS instruments. A 0.1 mm error in focus produces a 15% decrease in peak areacounts and is easily observed as a horizontal displacement in the static (un-scanned mode) XPS signalas observed on the standard CRT display of the detector response. Such a decrease in signal intensitygenerally urges the operator to correct the focus error so as to maximize the electron count rate. In this

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manner, the operator has avoided any chance of obtaining false BE readings and has accuratelyreproduced a nearly absolute focus point which greatly increases the quantitative accuracy of anyunknown sample. Experiments with the Bragg angle alignment of the crystal indicated that themaximum error due to an unusual bad alignment of the crystal would be <0.1 eV. To observe an errorgreater than 0.1 eV, the electron counts were found to decrease by >50%.

I. Quantitation Details and Choice of "Sensitivity Exponents" (ref 2, 4, 5)

By default, the SSI software uses a 0.7 number as the sensitivity exponent factor for each pass energysetting which are used in an equation that modifies theoretically calculated atomic photo-ionizationcross-sections (John H. Scofield, Ph.D.) to generate relative sensitivity factors that are valid for this XPSsystems and which can be used to generate valid atomic percentages. The 0.7 value produces a ±10%accuracy in quantitative results for XPS signals obtained by using a 150 eV pass energy and occurwithin the 0-700 eV BE range. For signals that occur at higher BEs, it is generally necessary to changethe sensitivity exponent factor to a 1.1 or higher value (1.4). To measure signals obtained by using otherpass energies for quantitation, it is necessary to use other sensitivity exponent factors, if the userdesires to maximize quantitative accuracy.

To determine useful sensitivity exponents, it is useful to use freshly ion etched poly-crystallinecopper foil to test the validity of the sensitivity exponent for larger BE ranges and different passenergies. By integrating the peak areas of the Cu (2p1), Cu (2p3), Cu (3s), Cu (3p) and Cu (3d) signalswith a modest amount of attention to baseline end points, it is possible to perform trial and errorchoices of the sensitivity exponents until a useful number is determined. Once a useful number has

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been entered into the computer software routine, then the software can generate "fictional" atomicpercentages for each of the integrated copper signals which will generate 20 atom % values with auncertainty of ±1-2 atom %. If the exponent factor is severely wrong then the atomic percentages willgenerate numbers such as 10%, 11%, 26%, 24%, and 29% or perhaps 31%, 28%, 14%, 13%, and 14%.

This trial-and-error approach may require 1-2 hours time and can be done on either wide scan data ormore preferably narrow scan data for each of the 4-5 pass energies. This method, in effect, assumesthat all five of the relative sensitivity factors for copper are reasonably correct. If wide scan data areused, then this method requires a little extra effort to avoid the satellites of the Cu (2p) signals.

This method, in effect, pretends that the pure copper sample is a standard material that is composed of5 components which are present in 20 atomic % concentration. The objective is to change thesensitivity exponent until the software generates a 20 atom % result for each of the five copper signals.After useful sensitivity exponents are found, they are tested by analyzing freshly exposed bulk regionsof crystalline materials such as SiO2, Al2O3, and NaCl. The high and low BE signals of the NaClcrystal are especially useful to test the validity of the sensitivity exponents.

As further checks, the freshly exposed bulk of common polymers (e.g. mylar or PMMA) or a thin filmof high purity silicone oil can also be analyzed. Teflon has repeatedly given a slightly larger thandesirable error by comparison to the other materials listed above. For that reason Teflon seems to be a less desirable material to determine useful sensitivity exponent values.

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J. Crude Tests of the Reliability of Relative Sensitivity Factors

Crude testing of Scofield's numbers are included in atomic percentage composition tables that giveatomic percentages for only one element. This testing used the software's automatic peak areaintegration software that is reasonably accurate. The results indicate that some of the relativesensitivity factors for some of the weaker signals are less reliable. If, however, all factors are takeninto account, then Scofield's numbers are reliable to a 95% accuracy level for truly homogeneousmaterials. These results are available when using the Spectral Data Processor software.

K. Traceability Details

The definition of traceability reported by Martin P. Seah and Cedric J. Powell in the J. Vac. Soc.Technol. Vol 8, p.736 (1990) publication is: "The property of a result of a measurement whereby itcan be related to appropriate standards, generally international or national standards, through anunbroken chain of comparisons." Based on this definition, the following correlations were envisioned.

Traceability of Reference Binding Energies (Calibration)

At this time, there are no international standards for binding energies or reference energies. Numberswhich are considered to be standard binding energies (BE), which would lead to traceability in BEs,include (a) those provided by Martin P. Seah at the National Physical Laboratory (NPL) in the UnitedKingdom (England), and (b) those provided by the ASTM in the USA "Standard Practice for Checking

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the Operating Characteristics of XPS Spectrometers" designated as "E 902-88". Other nations alsohave similar national standards, which tend to imitate those set by the USA and the UK. Recently,many people in the world have been using NPL's reference energies, which have become "de facto"standards but have not yet been accepted by the International Standards Organization (ISO).

There are still many workers and researchers using various numbers provided by the instrumentmakers. The author of this book was using Surface Science Instruments (SSI) Co. reference energiesuntil December 1992 and then switched to NPL BEs in January 1993. SSI reference energies camefrom Hewlett-Packard (HP). SSI and HP both used high precision voltage meters from HP to calibratetheir ESCA machines (i.e. X, M, and S-Probe and HP-5950 A-type and B-type, resp.). Hewlett Packardwas the first company to offer a commercial ESCA system, which used reference energies developedin cooperation with Kai Siegbahn at Uppsala, who effectively developed ESCA into a useful scienceand received the Nobel Prize.

In a recent effort to improve the accuracy of BEs obtained from pure elements, the S-Probe passenergies were checked and corrected, if needed, almost every work-day for two months to obtain highprecision and high accuracy BEs for the pure elements that are metals. This study used the NPLreference energies with Cu (2p3) at 932.67 eV with +/- 0.02 uncertainty and Au (4f7) 83.98 eV with+/-0.02 uncertainty by using 0.02 eV/pt. steps for the calibrations. To determine the "true" BE of eachof the pure elements, which were scraped clean in air and then ion etched in vacuum, a 0.05 eV/pt.step was used. A repetitive ion etching (depth profile) style was used to collect wide scan, valence(Fermi edge) band, and narrow scans of the main signals for each metal at 50, 25 and 10 eV passenergies. Each repetitive experiment run lasted about 4 hours. Therefore, if NPL's BE numbers are

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accepted as "de facto" international standards, then the ultimate traceability of BEs in this datacollection can be related to NPL BE numbers for Cu (2p3) and Au (4f7). In a different, but similarmanner, the BEs used to calibrate the S-Probe are traceable to Siegbahn's work and the highprecision, high voltage meters produced by the Hewlett Packard Company.

Traceability Transfer from Pure Metals to Non-conductive Binary Oxides

A question that should be posed is traceability to the oxide BEs. Traceability begins with NPL's BEsfor pure copper and gold as state above. Traceability then transfers to pure element BEs which arebased on NPL reference BEs. Traceability then transfers to pure element BEs based on SSI's referenceBEs, and then the naturally formed native oxide data published in Volume 2 of our XPS SpectralHandbook series where BEs were measured from pure element signals and also the naturally formednative oxide signals.

Naturally formed native oxides typically have thin oxide films (10-80Å) which, in general, behave asgood or true electrical conductors, which allows a direct measure of the true binding energy of many,but not all, binary oxides. To determine if traceability can indeed be transferred to true binary oxides, itwas necessary to study the behavior of the naturally formed native oxides by applying various floodgun settings with the samples grounded and insulated. The results from that study can be used totransfer traceability to the experimentally observed BEs of pure binary oxides. The most difficulttransfer of traceability occurs for the naturally formed native oxide systems. If the flood gun study wasnot done, then it is difficult to transfer traceability in a reliable manner from a conductive metal to oneof its corresponding non-conductive binary oxides.

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Traceability of Instrument Response Function

Copper, gold and silver data obtained from the X-Probe system were submitted to Martin P. Seah at theNPL for a round robin test on transmission function; the results of which were published in Surface andInterface Analysis, p.243 (1993). In that publication, X-Probe data, which we contributed, wereattributed to group #35. That paper reported that instrument has a Q(E) =E0.27 for Rex 4 pass energy(PE=150 V)and a Q(E) =E1.0 for the Res 2 pass energy (PE=50 V). If the NPL method is accepted as a"de-facto" standard, even though it is not an internationally recognized standard, then the transmissionfunction and quantitation results of the S-Probe system are traceable to the "metrology spectrometer" atNPL.

Traceability of Relative Sensitivity Factors (RSFs) used for Quantitation

Scofield's theoretically calculated photo-ionization cross-sections are internationally used as the "de-facto" standard theoretical numbers, except in Russia and a few other places, where Band's numbers arepreferred but are almost identical to Scofields. The SSI system uses a very simple equation that modifiesScofield's numbers to generate relative sensitivity factors that are used by the SSI software to calculateatom %s. That equation corrects for pass energy differences, transmission function differences, andinelastic mean free path versus kinetic energy dependency. The SSI system relies on Scofield numbersand that simple equation. Other instrument makers prefer to blend Scofield's numbers and experimentallydetermined numbers.

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Traceability of Sample Purity

The purity of the commercially pure (99+%) binary oxides can be traced to Aldrich's ICP or AA analysesperformed by Aldrich. Copies of their results are included in the handbook at the beginning of each groupof spectra. Similar data sheets were also obtained for samples bought from Cerac. A set of gold, copper,and silver samples, i.e. "Reference Metal Samples SCAA90" set, kit #367, was obtained from the NPLand used to test the instrument response function of the M-Probe system. Binding energies obtained fromthose gold, copper, and silver samples were identical to binding energies obtained from our commonplacegold, copper, and silver samples within the expected uncertainty of ±0.08 eV used for routine instrumentcalibration.

L. Reference Papers Describing Capabilities of X-Probe, M-Probe, andS-Probe XPS Systems

1. Robert L. Chaney, Surface and Interface Analysis, 10, 36-47 (1987) [re: X-Probe] 2. Noel H. Turner, Surface and Interface Analysis, 18, 47-51 (1992) [re: Quantitation] 3. M. P. Seah, Surface and Interface Analysis, 20, 243-266 (1993) [re: Response Function] 4. L.T. Weng et al, Surface and Interface Analysis, 20, 179-192 (1993) [re: Response Function] 5. L.T. Weng et al, Surface and Interface Analysis, 20, 193-205 (1993) [re: Response Function] 6. B. Vincent Crist, Surface Science Spectra, 1, 292-296 (1993) [re: KBr spectra] 7. B. Vincent Crist, Surface Science Spectra, 1, 376-380 (1993) [re: Ar/C spectra] 8. M. P. Seah, I.S. Gilmore, and G. Beamson, Surface and Interface Analysis, 26, 642-649 (1998)

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The Elements

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Silver Metal (Z=47) Ag0

[CAS# 7440-22-4]

Detailed Surface Composition Table

Description: Silver (Ag) [Argentum => Ag] Sum of 15 individual spectra after repetitive ion etchingDate: Tue Mar 1 1994

Corrected Exper. Sens Norm Relative Signal BE BE Factor Area Area Ag Auger 1192.7 1192.7 0.00 56994 117296 Ag Auger 1134.9 1134.9 0.00 123548 0 Ag3s 719.6 719.6 2.68 43435 16218 Ag3p1 604.0 604.0 3.79 98589 26023 Ag3p3 573.6 573.6 5.87 186287 31709 Ag3d 368.4 368.4 17.78 294202 16546 Ar2s 319.6 319.6 1.96 599 306 C 1s 284.5 284.5 1.00 910 910 Ar2p 241.7 241.7 3.06 1404 459 Ag4s 97.0 97.0 0.66 14200 21419 Ag4p 58.6 58.6 2.13 59667 27983 Ag4d 4.5 4.5 1.62 63425 39240

Page 48: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Silver Metal (Z=47) Ag0

[CAS# 7440-22-4]E

lect

ron

Cou

nts

Binding Energy (eV)

500000

1400 01120 840 560 280

Ag(

Aug

er)

Ag(

3s) Ag(

3p1)

Ag(

4s)

Ag(

4p)

Ag(

4d)

Ag(

3p3)

Ag(

3d)

Ag(

Aug

er)

Wide Scan Survey Spectrum

Page 49: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Silver Metal (Z=47) Ag0

[CAS# 7440-22-4]E

l e c t r o n C

o u n t s

Binding Energy (eV)

75000

382 362378 374 370 366

# 1: 368.24 eV 0.49 eV 839861.19 cts 54.09%# 2: 368.87 eV 1.10 eV 68931.65 cts 4.44%# 3: 372.15 eV 0.76 eV 20957.85 cts 1.35%# 4: 374.25 eV 0.48 eV 562894.44 cts 36.25%# 5: 374.78 eV 1.17 eV 46231.36 cts 2.98%# 6: 378.14 eV 0.85 eV 13923.96 cts 0.90%

Cu (2p3) at 932.67 eVAu (4f7) 83.98 eV

Ag FWHM: 0.49 eVG:L Ratio: 60:40

∆E = 6.01 eV

BE FWHM Peak Area Rel. %Ag (3d 5/2)

BE = 368.24 eV

Ag (3d 3/2)BE = 374.25 eV

Page 50: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Silver Metal (Z=47) Ag0

[CAS# 7440-22-4]E

lect

ron

Cou

nts

Binding Energy (eV)

50000

40 -1030 20 10 0

Valence Bands[Kr] 4d105s1

I.E. = 731 kJ/mol

BE = 4.8 eV

BE = 6.3 eV

Ag (4d 5/2,3/2)

Page 51: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International XXX XPS Handbooks of The Elements and Native Oxides

Aluminium Metal (Z=13) Al0

[CAS# 7429-90-5]

Detailed Surface Composition Table

Description: Aluminium (Al) 90 deg TOA Sum of 10 spectra from repetitive etch/scansDate: Thu Mar 3 1994

Corrected Exper. Sens Norm Relative Signal BE BE Factor Area Area O 1s 532.3 532.3 2.12 2859 1348 Ar2s 320.5 320.5 1.89 6880 3644 Ar loss 258.3 258.3 6.89 7355 1068 Ar2p 242.5 242.5 3.19 13927 4366 Al loss 180.1 180.1 0.00 3099 0 Al loss 165.4 165.4 0.00 8634 1021 Al loss 148.8 148.8 0.00 19410 0 Al loss 133.4 133.4 0.00 49247 0 Al2s 117.9 117.9 0.90 87391 96758 Al loss 103.7 103.7 0.00 10757 0 Al loss 88.2 88.2 0.00 31383 0 Al2p 72.7 72.7 0.67 51411 76273 Ar3p 9.5 9.5 0.32 1678 5196

Page 52: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International XXX XPS Handbooks of The Elements and Native Oxides

Aluminium Metal (Z=13) Al0

[CAS# 7429-90-5]E

lect

ron

Cou

nts

Binding Energy (eV)

50000

1000 0800 600 400 200

O(1

s) Ar(

2s)

Ar

loss

A

r(2p

)

Al l

oss

A

l los

s

Al l

oss

A

l los

s

Al(2

s)A

l los

s A

l los

s

Al(2

p)

Ar(

3p)

Wide Scan Survey Spectrum

Page 53: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International XXX XPS Handbooks of The Elements and Native Oxides

Aluminium Metal (Z=13) Al0

[CAS# 7429-90-5]E

lect

ron

Cou

nts

Binding Energy (eV)

3500

85 6581 77 73 69

# 1: 72.74 eV 0.35 eV 23550.20 cts 50.18%# 2: 73.14 eV 0.33 eV 11910.20 cts 25.38%# 3: 73.39 eV 0.64 eV 7493.96 cts 15.97%# 4: 74.15 eV 0.66 eV 2256.72 cts 4.81%# 5: 74.79 eV 0.45 eV 581.93 cts 1.24%# 6: 75.38 eV 1.08 eV 1137.63 cts 2.42%

Cu (2p3) at 932.67 eVAu (4f7) 83.98 eV

Ag FWHM: 0.49 eVG:L Ratio: 80:20

∆E = 0.40 eV

Al (2p 3/2)BE = 72.74 eV

Al (2p 1/2)BE = 73.14 eV

BE FWHM Peak Area Rel. %

Page 54: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International XXX XPS Handbooks of The Elements and Native Oxides

Aluminium Metal (Z=13) Al0

[CAS# 7429-90-5]E

lect

ron

Cou

nts

Binding Energy (eV)

1000

8 -84.8 1.6 -1.6 -4.8

Valence Bands[Ne] 3s23p1

I.E. = 577.4 kJ/mol

Page 55: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. XXX XPS Handbook of The Elements and Native Oxides

Argon (Z=18) Implanted Ions Ar0 in C[CAS# 7440-37-1]

Detailed Surface Composition Table

Description: Argon Ions Implanted in Natural Graphite Crystal (90 TOA) (Ref 7)Date: Tue Jan 12 1993

Corrected Exper. Sens Norm Relative Signal BE BE Factor Area Area Atom % Ar2s 319.5 319.2 1.90 30888 16239 * C 1s 284.8 284.5 1.00 233917 233887 95.88 Ar loss 268.8 268.5 0.00 7032 0 * Ar2p 241.8 241.5 3.17 31861 10046 4.12 Ar3s 22.3 21.9 0.29 3946 13713 Ar3p 8.9 8.6 0.31 2352 7584

Page 56: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. XXX XPS Handbook of The Elements and Native Oxides

Argon (Z=18) Implanted Ions Ar0 in C[CAS# 7440-37-1]

Ele

ctro

n C

ount

s

Binding Energy (eV)

70000

1000 0800 600 400 200N

(1s)

Ar(

2s)

C(1

s)A

r lo

ss A

r(2p

)

Ar(

3s)

Ar(

3p)

Wide Scan Survey Spectrum

Page 57: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. XXX XPS Handbook of The Elements and Native Oxides

Argon (Z=18) Implanted Ions) Ar0 in C[CAS# 7440-37-1]

E

l e c t r o n C

o u n t s

Binding Energy (eV)

20000

247 237245 243 241 239

Baseline: 246.75 to 239.15 eV# 1: 241.79 eV 0.89 eV 285703.44 cts 60.74%# 2: 242.64 eV 1.25 eV 27674.04 cts 5.88%# 3: 243.93 eV 0.87 eV 143143.13 cts 30.43%# 4: 244.70 eV 1.25 eV 13837.31 cts 2.94%3 iterations, chi square = 2.2206

Cu (2p3) at 932.67 eVAu (4f7) 83.98 eV

Ag FWHM: 0.49 eVG:L Ratio: 80:20

∆E = 2.14 eVAr (2p 3/2)BE = 241.79 eV

Ar (2p 1/2)BE = 243.93 eV

Page 58: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. XXX XPS Handbook of The Elements and Native Oxides

Argon (Z=18) Implanted Ions Ar0 in C[CAS# 7440-37-1]

Ele

ctro

n C

ount

s

Binding Energy (eV)

40 -1030 20 10 0

Ar(

3s)

Ar(

3p)

Valence Band[Ne]3s23p6

I.E. = 1520 kJ/molBE = 22.4 eV BE = 9.1 eV

Page 59: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook The Elements and Native Oxides

Arsenic Metal (Z=33) As0

[CAS# 7440-38-2]

Detailed Surface Composition Table

Description: Arsenic (As)Date: Thu Mar 10 1994

Corrected Exper. Sens Norm Relative Signal BE BE Factor Area Area As (2p1) 1359.5 1359.5 0.00 6333 0 As loss 1342.3 1342.3 0.00 2270 0 As (2p3) 1323.9 1323.9 0.00 16085 0 As Auger 519.0 519.0 0.00 1225 0 As Auger 467.8 467.8 0.00 1584 0 As Auger 457.7 457.7 0.00 2299 0 As Auger 425.5 425.5 0.00 720 0 As Auger 387.5 387.5 0.00 870 0 As Auger 371.2 371.2 0.00 7374 0 As Auger 359.6 359.6 0.00 5447 0 As Auger 335.0 335.0 0.00 4237 0 As Auger 327.0 327.0 0.00 792 0 As loss 279.1 279.1 1.00 7177 7178 As Auger 261.4 261.4 0.00 27159 0

Page 60: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook The Elements and Native Oxides

Arsenic Metal (Z=33) As0

[CAS# 7440-38-2]

Detailed Surface Composition Table (continued)

Description: Arsenic (As)Date: Thu Mar 10 1994

Corrected Exper. Sens Norm Relative Signal BE BE Factor Area Area

As loss 243.4 243.4 0.00 2653 0 As3s 225.7 225.7 0.00 13349 109271 As Auger 204.7 204.7 1.34 2677 2002 As loss 159.1 159.1 0.00 1201 0 As (3p) 140.7 140.7 1.42 10842 7637 As loss 59.2 59.2 0.00 1677 0 As3d 41.5 41.5 1.89 5514 2920 As4p 9.1 9.1 0.13 225 1784

Page 61: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook The Elements and Native Oxides

Arsenic Metal (Z=33) As0

[CAS# 7440-38-2]E

lect

ron

Cou

nts

Binding Energy (eV)

40000

1400 01120 840 560 280

As

(2p1

)

As

loss

A

s (2

p3)

As(

Aug

er)

As(

Aug

er)

As(

Aug

er)

As(

Aug

er)

As(

Aug

er)

As(

Aug

er)

As(

Aug

er)

As(

Aug

er)

As(

Aug

er)

As

loss

A

s(A

uger

)A

s lo

ss

As(

3s)

As(

Aug

er)

As

loss

A

s (3

p)

As

loss

A

s(3d

)

As(

4p)

Wide Scan Survey Spectrum

Page 62: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook The Elements and Native Oxides

Arsenic Metal (Z=33) As0

[CAS# 7440-38-2]

Ele

ctro

n C

ount

s

Binding Energy (eV)

1000

52 3248 44 40 36

Baseline: 43.95 to 39.40 eV# 1: 41.54 eV 0.52 eV 9161.62 cts 59.98%# 2: 42.25 eV 0.51 eV 6113.62 cts 40.02%3 iterations, chi square = 1.3571

Cu (2p3) at 932.67 eVAu (4f7) 83.98 eV

Ag FWHM: 0.49 eVG:L Ratio: 90:10

∆E = 0.71 eV

As (3d 5/2)BE = 41.54 eV

As (3d 3/2)BE = 42.25 eV

Page 63: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook The Elements and Native Oxides

Arsenic Metal (Z=33) As0

[CAS# 7440-38-2]

Ele

ctro

n C

ount

s

Binding Energy (eV)

1200

15 -511 7 3 -1

Valence Bands[Ar] 3d104s24p3

I.E. = 947 kJ/mol

BE = 2.5 eV

BE = 4.6 eV

Be = 9.3 eV

Page 64: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Gold Metal (Z=79) Au0

[CAS# 7440-57-5]

Detailed Surface Composition Table

Description: Gold (Au) 90 deg TOA [Aurum = Au] Sum of 15 repetitive etch/scans

Date: Fri Feb 25 1994

Corrected Exper. Sens Norm Relative Signal BE BE Factor Area Area Au4s 761.2 761.2 1.74 9904 5706 Au4p1 642.4 642.4 1.99 14742 7393 Au4p3 546.3 546.3 5.61 51765 9231 Au4d3 353.0 353.0 7.97 76555 9610 Au4d5 335.0 335.0 11.64 103982 8933 Au4f 83.6 83.6 17.66 208355 11797 Au5p1 74.0 74.0 0.48 1956 4090 Au5p3 56.8 56.8 1.14 11411 10020 Au5d 5.8 5.8 1.89 24461 12977

Page 65: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Gold Metal (Z=79) Au0

[CAS# 7440-57-5]E

lect

ron

Cou

nts

Binding Energy (eV)

200000

1400 01120 840 560 280

Au

(Aug

er)

Au

(Aug

er)

Au

(Aug

er)

Au(

4s)

Au(

4p1) Au(

4p3) A

u(4d

3) Au(

4d5)

C(1

s) Au

loss

A

u(4f

)A

u(5p

1)A

u(5p

3)

Au(

5d)

Wide Scan Survey Spectrum

Page 66: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Gold Metal (Z=79) Au0

[CAS# 7440-57-5]E

l e c t r o n C

o u n t s

Binding Energy (eV)

32000

95 7591 87 83 79

Baseline: 92.35 to 80.95 eV# 1: 83.95 eV 0.66 eV 476236.22 cts 56.49%# 2: 87.63 eV 0.64 eV 352224.00 cts 41.78%# 3: 85.04 eV 0.90 eV 8365.32 cts 0.99%# 4: 88.43 eV 0.90 eV 6289.84 cts 0.75%3 iterations, chi square = 6.2904

Cu (2p3) at 932.67 eVAu (4f7) 83.98 eV

Ag FWHM: 0.49 eVG:L Ratio: 70:30

∆E = 3.68 eV

Au (4f 7/2)BE = 83.95 eV

Au (4f 5/2)BE = 87.63 eV

Page 67: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Gold Metal (Z=79) Au0

[CAS# 7440-57-5]E

lect

ron

Cou

nts

Binding Energy (eV)

51000

40 -1030 20 10 0

Valence Bands[Xe]4f145d106s1

I.E. = 890 kJ/mol

BE = 0.3 eV

BE = 2.9 eVBE = 6.2 eVBE Peak Max = 3.8 eV

Page 68: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Gold Metal (Z=79) on PET Film Au0

[CAS# 7440-57-5]E

lect

ron

Cou

nts

Binding Energy (eV)

30000

15 -511 7 3 -1

Valence Bands[Xe]4f145d106s1

I.E. = 890 kJ/mol

0.33 eV

2.7 eV3.8 eV6.2 eV

Page 69: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Boron (Z=5) B0

[CAS# 7440-42-8]

Detailed Surface Composition Table

Description: Boron (B): Ion etched clean, 90 TOADate: Thu Feb 24 1994

Corrected Exper. Sens Norm Relative Signal BE BE Factor Area Area N 1s 398.2 398.2 1.76 583 331 Ar2s 319.4 319.4 1.96 4312 2202 C 1s 283.4 283.4 1.00 1302 1302 Ar loss 266.9 266.9 0.00 1506 0 Ar2p 241.6 241.6 3.06 8690 2839 B loss 212.6 212.6 0.00 12364 0 B 1s 187.7 187.7 0.49 27345 55744 Ar3s 22.0 22.0 0.24 476 2016 Ar3p 8.5 8.5 0.25 1338 5305

Page 70: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Boron (Z=5) B0

[CAS# 7440-42-8]E

lect

ron

Cou

nts

Binding Energy (eV)

20000

1400 01120 840 560 280

N(1

s)

Ar(

2s)

C(1

s)A

r lo

ss

Ar(

2p)

B lo

ss

B

(1s)

Ar(

3s)

Ar(

3p)

Wide Scan Survey Spectrum

Page 71: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Boron (Z=5) B0

[CAS# 7440-42-8]E

l e c t r o n C

o u n t s

Binding Energy (eV)

20000

198 178194 190 186 182

Baseline: 196.25 to 181.60 eV# 1: 187.39 eV 1.20 eV 250834.70 cts 33.58%# 2: 188.13 eV 1.20 eV 302887.16 cts 40.55%# 3: 188.74 eV 1.20 eV 140477.30 cts 18.80%# 4: 189.55 eV 1.20 eV 37808.46 cts 5.06%# 5: 190.84 eV 1.57 eV 15014.36 cts 2.01%3 iterations, chi square = 2.1708

Cu (2p3) at 932.67 eVAu (4f7) 83.98 eV

Ag FWHM: 0.49 eVG:L Ratio: 80:20

B (1s)BE (max) = 188.1 eV

Multiple peaks may be due toion beam damage or the presenceof different forms of boron.

Page 72: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Boron (Z=5) B0

[CAS# 7440-42-8]E

lect

ron

Cou

nts

Binding Energy (eV)

611.66

40 -1030 20 10 0

Valence Bands[He]2s22p2

I.E. = 801 kJ/mol

Ar (3p)Ar (3s)

Page 73: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Barium (Z=56) in Barium Carbonate (FW=197.35) Ba : BaCO3[CAS# 513-77-9]

Detailed Surface Composition Table

Description: BARIUM (Ba) CARBONATE (90 DEG TOA, Ion Etched Briefly at 4 KeV)Date: Fri Jul 10 1987

Corrected Exper. Sens Norm Relative Signal BE BE Factor Area Area Atom % O Auger 974.3 973.8 0.00 22438 0 BaAuger 898.2 897.7 0.00 48775 0 BaAuger 886.5 886.0 0.00 18189 0 Ba loss 817.1 816.6 0.10 18322 182905 Ba loss 801.8 801.3 0.00 23120 0 Ba3d3 791.8 791.3 9.29 154697 16650 * Ba3d5 776.4 775.9 13.75 217657 15828 17.19 O loss 553.2 552.7 0.00 47393 0 * O 1s 527.3 526.8 2.24 99098 44309 48.11 * C 1s 285.0 284.5 1.00 31967 31963 34.71 Ba4s 248.1 247.6 1.17 13225 11285 Ba loss 201.1 200.6 6.08 9596 1578 Ba loss 187.3 186.8 8.86 11455 1292 Ba (4p) 173.4 172.9 0.23 30989 134568 Ba loss 111.9 111.4 0.23 22578 98009 Ba loss 97.5 97.0 0.00 3773 0 Ba4d 84.7 84.2 7.05 125295 17764 O 2s 24.3 23.8 0.18 8226 46424

Ba5p 9.5 9.0 0.77 12728 16503

Page 74: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Barium (Z=56) in Barium Carbonate (FW=197.35) Ba : BaCO3[CAS# 513-77-9]

Ele

ctro

n C

ount

s

Binding Energy (eV)

125000

1000 0800 600 400 200

O(A

uger

)

Ba(

Aug

er)

Ba(

Aug

er)

Ba

loss

B

a lo

ss

Ba(

3d3)

Ba(

3d5)

O lo

ss

O(1

s)

In(3

d)

C(1

s)

Ba(

4s)

Ba

loss

B

a lo

ss Ba

(4p)

Ba

loss

B

a lo

ss

Ba(

4d)

O(2

s)B

a(5p

)

Wide Scan Survey SpectrumCharge Neutralizer ON

Page 75: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Barium (Z=56) in Barium Carbonate (FW=197.35) Ba : BaCO3[CAS# 513-77-9]

E

l e c t r o n C

o u n t s

Binding Energy (eV)

15000

808 758798 788 778 768

Baseline: 796.24 to 768.78 eV# 1: 775.96 eV 2.02 eV 159670.59 cts 54.97%# 2: 785.26 eV 3.85 eV 13019.02 cts 4.48%# 3: 788.65 eV 3.50 eV 8432.89 cts 2.90%# 4: 791.32 eV 2.02 eV 109322.29 cts 37.64%7 iterations, chi square = 1.7140

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.70 eVG:L Ratio: 90:10

∆E = 15.36 eVCharge Shift = 3.92 eV

Ba (3d 5/2)BE = 779.88 eV

Ba (3d 3/2)BE 795.24 eV

Page 76: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Barium (Z=56) in Barium Carbonate (FW=197.35) Ba : BaCO3[CAS# 513-77-9]

E

l e c t r o n C

o u n t s

Binding Energy (eV)

2000

40 -1030 20 10 0

Baseline: 15.29 to -3.53 eV# 1: 1.12 eV 2.30 eV 4470.11 cts 12.84%# 2: 5.78 eV 1.98 eV 3649.70 cts 10.49%# 3: 7.64 eV 1.63 eV 2763.34 cts 7.94%# 4: 10.18 eV 1.75 eV 14643.20 cts 42.07%# 5: 12.08 eV 1.96 eV 9276.51 cts 26.65%6 iterations, chi square = 1.2269

Valence Bands[Xe] 6s2

I.E. = 503 kJ/molCharge Shift = 3.92 eV

Ba (5p 3/2)BE = 14.1 eV

Ba (5p 1/2)BE = 16.0 eV

Page 77: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Barium (Z=56) in Barium Carbonate (FW=197.35) Ba : BaCO3[CAS# 513-77-9]

E

l e c t r o n C

o u n t s

Binding Energy (eV)

2200

293 273289 285 281 277

Baseline: 289.63 to 277.16 eV# 1: 281.08 eV 1.60 eV 41477.80 cts 45.40%# 2: 282.29 eV 1.46 eV 6945.30 cts 7.60%# 3: 284.71 eV 1.25 eV 7322.28 cts 8.01%# 4: 285.56 eV 1.49 eV 35618.08 cts 38.99%3 iterations, chi square = 2.0873

C (1s)BE (HC) = 285.0 eV

Charge Shift = 3.92 eV

C-C, C-RBE = 285.0- eV

CO3

BE = 289.48 eV

Page 78: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Barium (Z=56) in Barium Carbonate (FW=197.35) Ba : BaCO3[CAS# 513-77-9]

Ele

ctro

n C

ount

s

Binding Energy (eV)

14000

538 518534 530 526 522

Baseline: 531.88 to 523.25 eV# 1: 527.24 eV 1.63 eV 266713.00 cts 76.44%# 2: 528.13 eV 1.50 eV 82222.55 cts 23.56%4 iterations, chi square = 2.1079

O (1s)Charge Shift = 3.92 eV

Corrected BEs

1. 531.16 eV (CO3) ?2. 532.05

Page 79: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Beryllium Metal (Z=4) Be0

[CAS# 7440-41-7]

Detailed Surface Composition Table

Description: Beryllium (Be)Date: Mon Mar 7 1994

Corrected Exper. Sens Norm Relative Signal BE BE Factor Area Area O 1s 531.6 531.6 2.80 1375 491 Ar2s 319.5 319.5 1.96 2222 1135 Ar2p 241.7 241.7 3.06 4162 1360 Be loss 129.9 129.9 0.00 3989 0 Be1s 111.5 111.5 0.20 8003 39951 Ar3s 22.3 22.3 0.24 303 1283 Ar3p 8.5 8.5 0.25 460 1824

Page 80: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Beryllium Metal (Z=4) Be0

[CAS# 7440-41-7]E

lect

ron

Cou

nts

Binding Energy (eV)

7000

1400 01120 840 560 280

O(1

s) Ar(

2s)

Ar(

2p)

Be

loss

B

e(1s

)

Ar(

3s)

Ar(

3p)

Wide Scan Survey Spectrum

Page 81: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Beryllium Metal (Z=4) Be0

[CAS# 7440-41-7]

.

E

l e c t r o n C

o u n t s

Binding Energy (eV)

2600

124 104120 116 112 108

Baseline: 116.35 to 109.45 eV# 1: 111.44 eV 0.72 eV 5302.49 cts 13.74%# 2: 111.86 eV 0.61 eV 29389.19 cts 76.15%# 3: 112.75 eV 0.70 eV 1864.77 cts 4.83%# 4: 113.54 eV 0.71 eV 1092.05 cts 2.83%# 5: 114.46 eV 1.09 eV 945.84 cts 2.45%6 iterations, chi square = 1.4264

Cu (2p3) at 932.67 eVAu (4f7) 83.98 eV

Ag FWHM: 0.49 eVG:L Ratio: 90:10

Be (1s)BE = 111.86 eV

Peak due to ion damage oran alternate form of Be.

Page 82: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Beryllium Metal (Z=4) Be0

[CAS# 7440-41-7]E

lect

ron

Cou

nts

Binding Energy (eV)

250

40 -1030 20 10 0

Valence Bands[He]2s2

I.E. = 899 kJ/mol

Ar (3p)Ar (3s)

Page 83: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Bismuth Metal (Z=83) Bi0

[CAS# 7440-69-9]

Detailed Surface Composition Table

Description: Bismuth (Bi)Date: Mon Mar 7 1994

Corrected Exper. Sens Norm Relative Signal BE BE Factor Area Area Bi4s 936.6 936.6 1.68 3856 2300 Bi4p1 805.0 805.0 1.87 3434 1832 Bi4p3 678.7 678.7 5.99 10932 1827 Bi4d3 463.9 463.9 8.85 15819 1788 Bi4d5 440.3 440.3 13.07 28588 2187 Bi loss 171.8 171.8 0.00 11212 0 Bi4f 156.8 156.8 25.34 67957 2682 Bi5p1 118.2 118.2 0.56 706 1260 Bi5p3 92.8 92.8 1.45 1655 1140 Bi5d 23.8 23.8 3.12 9837 3153 Bi6s 10.5 10.5 0.09 174 1988

Page 84: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Bismuth Metal (Z=83) Bi0

[CAS# 7440-69-9]E

lect

ron

Cou

nts

Binding Energy (eV)

75000

1400 01120 840 560 280

Bi(4

p3) B

i(4d3

)B

i(4d5

)

Bi l

oss

B

i(4f)

Bi(5

p1)

Bi(5

p3)

Bi(5

d)B

i(6s)

Bi(4

s)

Bi(4

p1)

Bi (

Aug

er)

Bi (

Aug

er)

Wide Scan Survey Spectrum

Page 85: Vol 1 - XPS of Elements & Native Oxides - 1999

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Bismuth Metal (Z=83) Bi0

[CAS# 7440-69-9]E

l e c t r o n C

o u n t s

Binding Energy (eV)

5000

170 150166 162 158 154

Baseline: 166.15 to 154.20 eV# 1: 156.96 eV 0.58 eV 54632.68 cts 49.83%# 2: 157.80 eV 1.27 eV 6436.78 cts 5.87%# 3: 162.27 eV 0.58 eV 41484.79 cts 37.84%# 4: 163.00 eV 1.45 eV 7087.48 cts 6.46%

Cu (2p3) at 932.67 eVAu (4f7) 83.98 eV

Ag FWHM: 0.49 eVG:L Ratio: 70:30

∆E = 5.31 eV

Bi (4f 7/2)BE = 156.96 eV

Bi (4d 5/2)BE = 162.27 eV

Page 86: Vol 1 - XPS of Elements & Native Oxides - 1999

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Bismuth Metal (Z=83) Bi0

[CAS# 7440-69-9]E

lect

ron

Cou

nts

Binding Energy (eV)

500

15 -511 7 3 -1

Valence Bands[Xe] 4f145d106s26p3

I.E. = 703 kJ/mol

BE = 1.2 eV

BE = 3.4 eVBE = 10.6 eV

Page 87: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Bromine (Z=35) in Potassium Bromide (FW=119.01 ) Br : KBr[CAS# 7758-02-3]

Detailed Surface Composition Table

Description: POTASSIUM BROMIDE (KBr) CRYSTAL (17 HR IN VACUUM) (Ref 6)Date: Mon Dec 15 1986

Corrected Exper. Sens Norm Relative Signal BE BE Factor Area Area Atom % K loss 389.8 386.3 0.00 10051 0 * K 2s 377.2 373.7 2.07 100049 48382 48.34 K loss 321.2 317.7 0.00 40521 0 K loss 305.5 302.0 0.00 39599 0 K 2p 292.2 288.7 3.95 242072 61227 Br loss 268.7 265.2 0.00 9204 0 Br3s 255.0 251.5 1.58 72740 46016 Br loss 209.9 206.4 0.00 17984 0 Br3p1 187.8 184.3 1.89 35873 18945 Br3p3 181.2 177.7 3.67 140025 38194 S 2p 162.2 158.7 1.89 4014 2124 Br loss 96.3 92.8 0.00 16072 0 Br loss 82.4 78.9 0.00 39435 0 * Br3d 67.9 64.4 3.48 169762 48779 48.74 Br loss 45.0 41.5 0.00 12360 0 Br4s 32.0 28.5 0.23 24934 106317 K 3p 16.0 12.5 0.46 45428 98510 * C 1s 285.0 281.5 1.00 2936 2927 2.92

Page 88: Vol 1 - XPS of Elements & Native Oxides - 1999

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Bromine (Z=35) in Potassium Bromide (FW=119.01 ) Br : KBr[CAS# 7758-02-3]

Ele

ctro

n C

ount

s

Binding Energy (eV)

50000

1000 0800 600 400 200K

loss

K(2

s)

K lo

ss

K

loss

K(2

p)

Br

loss

B

r(3s

)

Br

loss

Br(

3p1)

Br(

3p3)

S(2

p)

Br

loss

B

r lo

ss

Br(

3d)

Br

loss

B

r(4s

)K

(3p)C

(1s)

Wide Scan Survey SpectrumCharge Neutralizer ON

Page 89: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Bromine (Z=35) in Potassium Bromide (FW=119.01 ) Br : KBr[CAS# 7758-02-3]

Ele

ctro

n C

ount

s

Binding Energy (eV)

1400

76 5672 68 64 60

Baseline: 70.43 to 61.65 eV# 1: 65.00 eV 0.96 eV 16102.54 cts 60.21%# 2: 66.05 eV 0.94 eV 10642.96 cts 39.79%3 iterations, chi square = 1.5323

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.70 eVG:L Ratio: 80:20

∆E = 1.05 eVCharge Shift = 3.54 eV

Br (3d 5/2)BE = 68.5 eV

Br (3d 3/2)BE = 69.6 eV

Page 90: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Bromine (Z=35) in Potassium Bromide (FW=119.01 ) Br : KBr[CAS# 7758-02-3]

Ele

ctro

n C

ount

s

Binding Energy (eV)

15000

40 -1030 20 10 0

Baseline: 34.12 to -2.55 eV# 1: 1.01 eV 1.48 eV 81520.06 cts 28.78%# 2: 9.96 eV 2.97 eV 5102.94 cts 1.80%# 3: 11.65 eV 1.15 eV 22086.21 cts 7.80%# 4: 13.82 eV 1.18 eV 88194.09 cts 31.14%# 5: 15.46 eV 2.03 eV 11877.33 cts 4.19%# 6: 23.09 eV 2.68 eV 9435.87 cts 3.33%# 7: 25.44 eV 2.15 eV 5867.64 cts 2.07%# 8: 27.40 eV 2.42 eV 11875.24 cts 4.19%# 9: 29.96 eV 1.31 eV 47287.28 cts 16.69%5 iterations, chi square = 2.7711

Valence Bands[Ar] 3d104s24p5

I.E. (Br) = 1140 kJ/molCharge Shift = 3.54 eV

Br (4p)BE = 4.5 eV

Br (4s)BE = 13.5 eV

K (3p)BE = 17.4 eV

K (3s)BE = 33.5 eV

Page 91: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Bromine (Z=35) in Potassium Bromide (FW=119.01 ) Br : KBr[CAS# 7758-02-3]

Ele

ctro

n C

ount

s

Binding Energy (eV)

2000

288 273285 282 279 276

Baseline: 284.91 to 277.83 eV# 1: 281.46 eV 1.58 eV 11579.27 cts 100.00%17 iterations, chi square = 4.8036

C (1s)BE (HC) = 285.0 eV

Charge Shift = 3.54 eV

C-C, C-RBE = 285.0 eV

Page 92: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Bromine (Z=35) in Potassium Bromide (FW=119.01 ) Br : KBr[CAS# 7758-02-3]

Ele

ctro

n C

ount

s

Binding Energy (eV)

50000

292 272288 284 280 276

Baseline: 291.21 to 278.77 eV# 1: 281.42 eV 1.40 eV 9959.45 cts 2.71%# 2: 289.66 eV 1.10 eV 357677.69 cts 97.29%13 iterations, chi square = 5.7855

K (2p 3/2)Charge Shift = 3.54 eV

K (ionic KBr)BE = 293.2 eV

Page 93: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Carbon (Z=6) Amorphous C0

[CAS# 7440-44-0]

Detailed Surface Composition Table

Description: Carbon (C) [amorphous]Date: Sun Mar 13 1994

Corrected Exper. Sens Norm Relative Signal BE BE Factor Area Area

C Auger 1221.4 1221.4 0.00 11013 0O 1s 532.6 532.6 2.80 422 151Ar2s 319.1 319.1 1.96 1178 601C 1s 284.4 284.4 1.00 32524 32523Ar2p 241.5 241.5 3.06 1650 539Ar3s 21.9 21.9 0.24 514 2177Ar3p 8.5 8.5 0.25 101 400

Page 94: Vol 1 - XPS of Elements & Native Oxides - 1999

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Carbon (Z=6) Amorphous C0

[CAS# 7440-44-0]E

lect

ron

Cou

nts

Binding Energy (eV)

60000

1400 01120 840 560 280

O(1

s) Ar(

2s)

C(1

s)

Ar(

2p)

Ar(

3s)

Ar(

3p)C(A

uger

)

Wide Scan Survey Spectrum

Page 95: Vol 1 - XPS of Elements & Native Oxides - 1999

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Carbon (Z=6) Amorphous C0

[CAS# 7440-44-0]E

l e c t r o n C

o u n t s

Binding Energy (eV)

3500

305 275299 293 287 281

Baseline: 292.05 to 279.65 eV# 1: 283.99 eV 0.78 eV 28453.71 cts 26.13%# 2: 284.46 eV 0.69 eV 35198.47 cts 32.33%# 3: 285.07 eV 0.70 eV 22758.27 cts 20.90%# 4: 285.55 eV 0.70 eV 7590.67 cts 6.97%# 5: 285.97 eV 0.93 eV 4373.33 cts 4.02%# 6: 286.83 eV 2.26 eV 7209.63 cts 6.62%# 7: 289.30 eV 2.70 eV 3301.53 cts 3.03%3 iterations, chi square = 1.5406

Cu (2p3) at 932.67 eVAu (4f7) 83.98 eV

Ag FWHM: 0.49 eVG:L Ratio: 80:20

C (1s)BE (max) = 284.46 eV

Other peaks may be due toion etching damage ordifferent polymorphicforms of carbon.

π -> π* bands are very weakfor amorphous carbon.

Page 96: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Carbon (Z=6)Amorphous C0

[CAS# 7440-44-0]E

lect

ron

Cou

nts

Binding Energy (eV)

3400

15 -511 7 3 -1

Valence BandsAmorphous[He] 2s22p2

I.E. = 1086 kJ/mol

Ar (3p)

Page 97: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Carbon (Z=6) Highly Oriented Pyrolytic Graphite (HOPG) C0

[CAS# 7440-44-0]E

lect

ron

Cou

nts

Binding Energy (eV)

2500

35 -527 19 11 3

Valence BandsHOPG (not etched)

[He] 2s22p2

I.E. = 1086 kJ/mol

BE = 8.0 eV

BE = 13.6 eV

BE (max) = 18.6 eV

Page 98: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Carbon (Z=6) Argon Ion Etched Diamond Bulk C0

[CAS# 7440-44-0]E

lect

ron

Cou

nts

Binding Energy (eV)

7000

30 -1022 14 6 -2

Valence BandsDiamond (Etched)

[He] 2s22p2

I.E. = 1086 kJ/molAr (3p)

Ar (3s)

BE = 14.1 eV

BE = 18.6 eV

BE = 26.6 eV

C (1s) BEs were corrected bysetting BE (Ar 3p) = 9.1 eV

Page 99: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Calcium (Z=20) in Calcium Fluoride (FW=78.08) Ca:CaF2

Detailed Surface Composition Table

Description: CALCIUM di-FLUORIDE (CaF2) CRYSTAL (90 DEG TOA)Date: Sat Dec 12 1986

Corrected Exper. Sens Norm Relative Signal BE BE Factor Area Area Atom % F Auger 878.1 873.4 0.00 4083 22244 F Auger 868.7 863.9 0.00 2301 12498 F Auger 858.8 854.1 0.00 11140 0 F Auger 850.7 846.0 0.00 4942 26690 F Auger 843.1 838.4 0.00 1970 10614 F Auger 832.6 827.9 0.00 57988 0 F Auger 823.2 818.4 0.00 1191 6378 F Auger 721.9 717.2 0.00 7522 39162 F Auger 713.4 708.7 0.00 8832 46322 F loss 702.9 698.2 0.00 12063 0 * F 1s 685.9 681.2 4.09 133226 32581 59.70 * O 1s 532.3 527.5 2.23 2565 606 1.11 Ca loss 477.9 473.1 0.28 2231 7960 Ca loss 456.6 451.8 0.00 2977 0 Ca2s 440.3 435.5 2.52 35711 14163 Ca loss 387.3 382.5 0.00 8167 0 Ca loss 363.0 358.3 0.00 1758 0

Page 100: Vol 1 - XPS of Elements & Native Oxides - 1999

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Calcium (Z=20) in Calcium Fluoride (FW=78.08) Ca:CaF2

Detailed Surface Composition Table

Description: CALCIUM di-FLUORIDE (CaF2) CRYSTAL (90 DEG TOA)Date: Sat Dec 12 1986

Corrected Exper. Sens Norm Relative Signal BE BE Factor Area Area Atom %

* Ca2p 348.3 343.6 5.02 88763 17684 32.41 * C 1s 285.0 280.2 1.00 3702 3699 6.78 Ca loss 80.4 75.6 0.00 490 0 Ca loss 61.2 56.4 0.00 3251 0 Ca3s 44.3 39.6 0.00 5461 0 Ca+F 25.4 20.6 0.00 13986 0

Page 101: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Calcium (Z=20) in Calcium Fluoride (FW=78.08) Ca:CaF2E

lect

ron

Cou

nts

Binding Energy (eV)

160000

1000 0800 600 400 200

F(A

uger

)F

(Aug

er)

F(A

uger

)F

(Aug

er)

F(A

uger

)F

(Aug

er)

F(A

uger

)

F(A

uger

)F

(Aug

er)

F lo

ss

F

(1s)

O (

1s)

Ca

loss

C

a lo

ss C

a(2s

)

Ca

loss

Ca

loss

C

a(2p

)

C(1

s)

Ca

loss

C

a lo

ss

Ca(

3s)

Ca(

3p)

Wide Scan Survey SpectrumCharge Neutralizer ON

Page 102: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Calcium (Z=20) in Calcium Fluoride (FW=78.08) Ca:CaF2E

lect

ron

Cou

nts

Binding Energy (eV)

150000

355 335351 347 343 339

Baseline: 351.71 to 339.96 eV# 1: 344.38 eV 1.41 eV 822055.81 cts 66.33%# 2: 347.94 eV 1.40 eV 417316.97 cts 33.67%16 iterations, chi square = 5.7335

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.70 eVG:L Ratio: 80:20

∆E = 3.56 eVCharge Shift = 4.07 eV

Ca (2p 3/2)BE = 348.4 eV

Ca (2p 1/2)BE = 352.0 eV

Page 103: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Calcium (Z=20) in Calcium Fluoride (FW=78.08) Ca:CaF2E

l e c t r o n C

o u n t s

Binding Energy (eV)

40000

40 -1030 20 10 0

Baseline: 33.08 to -1.91 eV# 1: 4.27 eV 1.48 eV 60640.03 cts 6.58%# 2: 5.71 eV 1.39 eV 59454.26 cts 6.45%# 3: 22.12 eV 1.50 eV 504445.28 cts 54.72%# 4: 26.09 eV 1.57 eV 263390.03 cts 28.57%# 5: 29.00 eV 2.50 eV 33870.52 cts 3.67%4 iterations, chi square = 6.8014

Valence Bands[Ar] 4s2

I.E.(Ca) = 590 kJ/molCharge Shift = 4.07 eV

Ca (3p)BE = 26.2 eV

F (2s)BE = 30.2 eV

Page 104: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Calcium (Z=20) in Calcium Fluoride (FW=78.08) Ca:CaF2E

l e c t r o n C

o u n t s

Binding Energy (eV)

20000

292 272288 284 280 276

Baseline: 288.22 to 276.88 eV# 1: 280.93 eV 1.26 eV 168854.13 cts 88.05%# 2: 281.86 eV 1.18 eV 17738.96 cts 9.25%# 3: 284.93 eV 2.05 eV 5187.82 cts 2.71%6 iterations, chi square = 2.0319

C-C, C-RBE = 285.0 eV

C (1s)BE (HC) = 285.0 eV

Charge Shift = 4.07 eV

Page 105: Vol 1 - XPS of Elements & Native Oxides - 1999

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Calcium (Z=20) in Calcium Fluoride (FW=78.08) Ca:CaF2E

lect

ron

Cou

nts

Binding Energy (eV)

300000

690 670686 682 678 674

Baseline: 686.71 to 676.53 eV# 1: 681.37 eV 1.40 eV 1721535.50 cts 100.00%3 iterations, chi square = 6.0467

F (ionic CaF2)BE = 685.4 eV

F (1s)Charge Shift = 4.07 eV

Page 106: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Cadmium Metal (Z=48) Cd0

[CAS# 7440-43-9]

Detailed Surface Composition Table

Description: Cadmium (Cd) 90 TOA, Scraped, 3KV etch >30 minDate: Mon Feb 14 1994

Corrected Exper. Sens Norm Relative Signal BE BE Factor Area Area CdAuger 1109.8 1109.8 0.00 32080 0 CdAuger 1103.1 1103.1 0.00 12730 0 Cd3s 772.8 772.8 2.74 10195 3722 Cd3p1 652.4 652.4 3.92 27623 7042 Cd3p3 618.1 618.1 7.97 56646 7112 Cd loss 421.0 421.0 8.07 16442 2037 Cd3d3 411.9 411.9 8.09 102377 12660 Cd3d5 405.5 405.5 11.70 125413 10720 Cd4s 109.9 109.9 0.71 3664 5161 Cd4p 68.8 68.8 2.33 6433 2766 Cd loss 19.8 19.8 0.00 4585 0 Cd4d 10.7 10.7 1.97 21427 10881

Page 107: Vol 1 - XPS of Elements & Native Oxides - 1999

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Cadmium Metal (Z=48) Cd0

[CAS# 7440-43-9]E

lect

ron

Cou

nts

Binding Energy (eV)

130000

1400 01120 840 560 280

Cd(

Aug

er)

Cd(

Aug

er)

Cd(

3s) Cd(

3p1)

Cd(

3p3)

Cd

loss

C

d(3d

3)

Cd(

4s)

Cd(

4p)

Cd

loss

C

d(4d

)

Cd(

3d5)

Cd(

Aug

er)

Cd(

Aug

er)

Wide Scan Survey Spectrum

Page 108: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Cadmium Metal (Z=48) Cd0

[CAS# 7440-43-9]E

l e c t r o n C

o u n t s

Binding Energy (eV)

40000

425 395419 413 407 401

Baseline: 424.10 to 399.65 eV# 1: 405.00 eV 0.56 eV 500275.97 cts 47.09%# 2: 405.59 eV 0.94 eV 46110.80 cts 4.34%# 3: 406.64 eV 1.38 eV 22177.92 cts 2.09%# 4: 411.74 eV 0.51 eV 321974.53 cts 30.31%# 5: 412.24 eV 0.91 eV 59061.63 cts 5.56%# 6: 413.10 eV 1.00 eV 24125.08 cts 2.27%# 7: 414.29 eV 1.29 eV 42030.71 cts 3.96%# 8: 419.42 eV 1.20 eV 18845.75 cts 1.77%# 9: 421.07 eV 1.28 eV 27745.75 cts 2.61%3 iterations, chi square = 4.1013

Cu (2p3) at 932.67 eVAu (4f7) 83.98 eV

Ag FWHM: 0.49 eVG:L Ratio: 70:30

∆E = 6.74 eV

Cd (3d 5/2)BE = 405.00 eV

Cd (3d 3/2)BE = 411.74 eV

Page 109: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Cadmium Metal (Z=48) Cd0

[CAS# 7440-43-9]E

lect

ron

Cou

nts

Binding Energy (eV)

85000

40 -1030 20 10 0

Valence Bands[Kr] 4d105s2

I.E. = 868 kJ/mol

Cd (4d 5/2)BE = 10.7 eV

Cd (4d 3/2)BE = 11.7 eV

Page 110: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Cerium (Z=58) Oxide (FW=172.12) CeO2(pellet)

Detailed Surface Composition Table

Description: CeO2 RMC 3mm plt 90 TOA #70202-13 (mesh at 1mm)Date: Wed May 18 1994

Corrected Exper. Sens Norm Relative Signal BE BE Factor Area Area Atom % O Auger 973.1 967.7 0.00 7546 0 Ce-ms 931.1 925.7 0.00 2796 0 Ce-ms 917.0 911.6 0.00 12908 0 Ce3d3 898.9 893.6 9.71 36913 3802 Ce3d5 883.0 877.6 14.44 58106 4024 CeAuger 827.0 821.6 0.00 52841 0 CeAuger 750.5 745.2 0.00 2102 0 CeAuger 732.8 727.4 0.00 7295 0 CeAuger 716.9 711.5 0.00 10557 0 * F 1s 684.1 678.7 2.86 2060 720 1.12 O loss 562.9 557.5 0.00 4537 0 O loss 543.6 538.2 0.00 11426 0 * O 1s 529.5 524.1 2.29 62352 27173 42.12 C loss 302.8 297.4 0.00 2693 0 * C 1s 285.0 279.6 1.00 21617 21519 33.36 Ce-ms 219.9 214.5 0.00 8432 0 Ce4p3 206.5 201.1 3.27 11066 3389 Ce5s 36.5 31.1 0.28 4114 14492 Ce5p 17.7 12.3 0.83 19476 23573 * Ce4d 122.7 117.3 9.92 149823 15098 23.40

Page 111: Vol 1 - XPS of Elements & Native Oxides - 1999

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Cerium (Z=58) Oxide (FW=172.12) CeO2(pellet)

E

l e c t r o n C

o u n t s

Binding Energy (eV)

60000

1000 0800 600 400 200

O

( A

u g e r )

C

e - m

s C

e - m

s C

e ( 3 d 3 )C

e ( 3 d 5 )

C

e ( A

u g e r )

C

e ( A

u g e r )C

e ( A

u g e r )C

e ( A

u g e r )

F

( 1 s ) O

l o s s O

l o s s O

( 1 s )

C

l o s s C

( 1 s )

C

e - m

s C

e ( 4 p 3 )

C

e ( 5 s )C

e ( 5 p )

C

e ( 4 d )

Wide Scan Survey SpectrumCharge Neutralizer ON

Page 112: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Cerium (Z=58) Oxide (FW=172.12) CeO2(pellet)

E

l e c t r o n C

o u n t s

Binding Energy (eV)

14000

960 860940 920 900 880

Baseline: 918.10 to 869.00 eV# 1: 876.99 eV 3.28 eV 247542.13 cts 25.83%# 2: 880.01 eV 2.10 eV 59467.66 cts 6.21%# 3: 881.95 eV 2.29 eV 47078.96 cts 4.91%# 4: 883.96 eV 3.06 eV 70625.02 cts 7.37%# 5: 892.90 eV 2.85 eV 192623.19 cts 20.10%# 6: 895.66 eV 2.31 eV 105506.46 cts 11.01%# 7: 898.23 eV 2.29 eV 44486.23 cts 4.64%# 8: 900.73 eV 2.40 eV 29755.31 cts 3.11%# 9: 902.59 eV 2.79 eV 32444.58 cts 3.39%#10: 906.73 eV 5.89 eV 22280.29 cts 2.33%#11: 911.17 eV 2.67 eV 106411.41 cts 11.11%3 iterations, chi square = 3.3203

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.70 eVG:L Ratio: 90:20

∆E = 18.67 eVCharge Shift = 5.14 eV

Ce (3d 5/2)BE = 882.13 eV

Ce (3d 3/2)BE = 900.80 eV

Page 113: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Cerium (Z=58) Oxide (FW=172.12) CeO2(pellet)

E

l e c t r o n C

o u n t s

Binding Energy (eV)

7000

40 -1030 20 10 0

Baseline: 24.20 to -7.10 eV# 1: -2.82 eV 2.33 eV 10038.26 cts 2.12%# 2: -1.16 eV 2.26 eV 53234.02 cts 11.25%# 3: 0.72 eV 2.08 eV 34685.48 cts 7.33%# 4: 10.89 eV 2.48 eV 62666.55 cts 13.25%# 5: 12.68 eV 2.63 eV 131562.77 cts 27.81%# 6: 15.13 eV 2.52 eV 93995.98 cts 19.87%# 7: 17.57 eV 2.54 eV 63881.73 cts 13.50%# 8: 19.63 eV 2.64 eV 22988.09 cts 4.86%9 iterations, chi square = 2.3487

Valence Bands[Xe] 4f15d16s2

I.E. (Ce) = 527 kJ/molCharge Shift = 5.14 eV

Ce (5p)

Ce (5s)Ce (5d 6s)

Page 114: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Cerium (Z=58) Oxide (FW=172.12) CeO2(pellet)

E

l e c t r o n C

o u n t s

Binding Energy (eV)

2200

290 270286 282 278 274

Baseline: 286.60 to 275.80 eV# 1: 279.86 eV 1.73 eV 33860.54 cts 79.22%# 2: 281.26 eV 1.50 eV 1754.30 cts 4.10%# 3: 283.02 eV 1.31 eV 1218.69 cts 2.85%# 4: 284.15 eV 1.97 eV 5907.96 cts 13.82%14 iterations, chi square = 2.5820

C (1s)BE (HC) = 285.0 eV

Charge Shift = 5.14 eV

C-C, C-RBE = 285.0 eV

CO3

BE = 289.29 eV

Page 115: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Cerium (Z=58) Oxide (FW=172.12) CeO2(pellet)

E

l e c t r o n C

o u n t s

Binding Energy (eV)

16000

535 515531 527 523 519

Baseline: 530.65 to 519.85 eV# 1: 524.09 eV 1.72 eV 561027.38 cts 86.84%# 2: 526.46 eV 1.33 eV 46860.39 cts 7.25%# 3: 527.42 eV 2.25 eV 38167.25 cts 5.91%9 iterations, chi square = 2.6952

O (1s)Charge Shift = 5.14 eV

CarbonateHydroxide

OxideBE = 529.23 eV

Page 116: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Chlorine (Z=17) in Sodium Chloride (FW=58.44) Cl : NaCl[CAS# 7647-14-5]

Detailed Surface Composition Table

Description: SODIUM CHLORIDE (NaCl) CRYSTAL (AFTER 24 HR IN UHV VACUUM)Date: Mon Dec 12 1986

Corrected Exper. Sens Norm Relative Signal BE BE Factor Area Area Atom % Na Auger 565.0 561.2 0.00 19026 0 Na Auger 552.4 548.7 0.00 8497 0 Na Auger 536.4 532.6 0.00 66995 0 Na Auger 524.0 520.2 0.00 20813 0 Na Auger 513.2 509.4 0.00 18470 0 Na Auger 497.4 493.6 2.70 230153 0 Na Auger 454.3 450.6 0.01 5605 0 Cl2s 285.0 281.2 1.70 54657 32232 Cl2s 269.6 265.8 1.73 110674 64092 S 2s 227.4 223.6 1.52 4191 2762 Cl loss 217.5 213.7 0.00 58139 0 * Cl2p 198.7 194.9 2.49 186849 75008 45.01 * S 2p 163.2 159.4 1.89 8086 4286 2.57 Na loss 79.2 75.4 0.00 15554 0 * Na2s 63.3 59.5 0.52 45625 87368 52.42 Na loss 46.5 42.7 0.00 7168 0 Na2p 30.3 26.5 0.24 23969 99366 Cl3s 15.7 11.9 0.24 8809 37256

Page 117: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Chlorine (Z=17) in Sodium Chloride (FW=58.44) Cl : NaCl[CAS# 7647-14-5]

Ele

ctro

n C

ount

s

Binding Energy (eV)

220000

1000 0800 600 400 200

Na(

Aug

er)

Na(

Aug

er)

Na(

Aug

er)

Na(

Aug

er)

Na(

Aug

er)

Na(

Aug

er)

Cl l

oss

C

l(2s)

S(2

s)C

l los

s

Cl(2

p)

S(2

p)

Na

loss

N

a(2s

)N

a lo

ss Na(

2p)

Cl(3

s)

Na(

Aug

er)

Wide Scan Survey SpectrumCharge Neutralizer ON

Page 118: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Chlorine (Z=17) in Sodium Chloride (FW=58.44) Cl : NaCl[CAS# 7647-14-5]

Ele

ctro

n C

ount

s

Binding Energy (eV)

4400

206 186202 198 194 190

Baseline: 200.73 to 192.84 eV# 1: 195.80 eV 1.23 eV 104148.29 cts 66.79%# 2: 197.43 eV 1.18 eV 51796.32 cts 33.21%50 iterations, chi square = 1.1716

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.70 eVG:L Ratio: 80:20

∆E = 1.63 eVCharge Shift = 3.14 eV

Cl (2p 3/2)BE = 198.9 eV

Cl (2p 1/2)BE = 200.6 eV

Page 119: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Chlorine (Z=17) in Sodium Chloride (FW=58.44) Cl : NaCl[CAS# 7647-14-5]

E

l e c t r o n C

o u n t s

Binding Energy (eV)

14000

40 -1030 20 10 0

Baseline: 34.52 to -2.56 eV# 1: 2.37 eV 1.34 eV 60471.52 cts 19.40%# 2: 3.57 eV 1.30 eV 31884.26 cts 10.23%# 3: 13.54 eV 1.60 eV 67245.32 cts 21.58%# 4: 19.57 eV 1.80 eV 21793.36 cts 6.99%# 5: 28.12 eV 1.31 eV 130252.69 cts 41.79%13 iterations, chi square = 6.9252

Valence Bands[Ne] 3s23p5

I.E. (Cl) = 1251 kJ/molCharge Shift = 3.14 eV

Cl (3p)BE = 5.5 eV

Na (2p)BE = 31.2 eV

Cl (3s)BE = 16.7 eV

Page 120: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Chlorine (Z=17) in Sodium Chloride (FW=58.44) Cl : NaCl[CAS# 7647-14-5]

Ele

ctro

n C

ount

s

Binding Energy (eV)

10000

292 272288 284 280 276

Baseline: 283.50 to 280.66 eV# 1: 281.86 eV 1.17 eV 22886.02 cts 100.00%5 iterations, chi square = 5.1974

C (1s)BE (HC) = 285.0 eV

Charge Shift = 3.14 eVC-C, C-RBE = 285.0 eV

Page 121: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Chlorine (Z=17) in Sodium Chloride (FW=58.44) Cl : NaCl[CAS# 7647-14-5]

Ele

ctro

n C

ount

s

Binding Energy (eV)

24000

1080 10601076 1072 1068 1064

Baseline: 1073.37 to 1065.07 eV# 1: 1068.70 eV 1.39 eV 654438.81 cts 100.00%8 iterations, chi square = 1.9506

Na (1s)Charge Shift = 3.14 eV

Na (ionic NaCl)BE = 1071.8 eV

Page 122: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Cobalt Metal (Z=27) Co0

[CAS# 7440-48-4]

Detailed Surface Composition Table

Description: Cobalt (Co) 90 deg TOA Sum of 10 repetitive etch/scans

Date: Wed Feb 9 1994

Corrected Exper. Sens Norm Relative Signal BE BE Factor Area Area Co2s 925.3 925.3 4.19 20183 4816 Co Auger 837.9 837.9 0.72 7322 10126 Co Auger 830.5 830.5 0.72 5388 7435 Co2p1 793.4 793.4 5.86 61096 10429 Co2p3 778.4 778.4 11.35 149685 13188 Co Auger 713.0 713.0 0.00 71855 0 Co Auger 697.4 697.4 0.75 4523 6015 Co3s 100.9 100.9 0.84 16449 19545 Co3p 59.0 59.0 2.00 30153 15095

Page 123: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Cobalt Metal (Z=27) Co0

[CAS# 7440-48-4]E

lect

ron

Cou

nts

Binding Energy (eV)

75000

1400 01120 840 560 280

Co(

2s)

Co(

Aug

er)

Co(

Aug

er)

Co(

2p1)

Co(

2p3)

Co(

Aug

er)

Co(

Aug

er)

Co(

3s) Co(

3p)

O(1

s)

Ar(

2s)

Ar(

2p)

Wide Scan Survey Spectrum

Page 124: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Cobalt Metal (Z=27) Co0

[CAS# 7440-48-4]E

l e c t r o n C

o u n t s

Binding Energy (eV)

100000

790 770786 782 778 774

Baseline: 788.45 to 773.00 eV# 1: 778.25 eV 0.87 eV 1470508.25 cts 39.80%# 2: 779.04 eV 1.46 eV 664909.31 cts 18.00%# 3: 780.55 eV 5.72 eV 1532379.00 cts 41.47%# 4: 775.54 eV 1.00 eV 26934.38 cts 0.73%20 iterations, chi square = 6.2577

Cu (2p3) at 932.67 eVAu (4f7) 83.98 eV

Ag FWHM: 0.49 eVG:L Ratio: 60:40Co (2p 3/2)

BE = 778.25 eV

Co (auger)

Co (auger)

Page 125: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Cobalt Metal (Z=27) Co0

[CAS# 7440-48-4]E

lect

ron

Cou

nts

Binding Energy (eV)

900

40 -1030 20 10 0

Valence Bands[Ar] 3d74s2

I.E. = 760 kJ/mol

Page 126: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Chromium Metal (Z=24) Cr0

[CAS# 7440-47-3]

Detailed Surface Composition Table

Description: Chromium (Cr) Sum of 20 repetitive etch/scansDate: Fri Feb 11 10:38 1994

Corrected Exper. Sens Norm Relative Signal BE BE Factor Area Area Cr auger 1027.2 1027.2 0.00 2047 0 Cr auger 1003.6 1003.6 0.00 1256 0 Cr auger 997.3 997.3 0.00 5780 0 Cr auger 959.5 959.5 0.00 25216 0 Cr auger 915.9 915.9 0.00 6614 0 Cr2s 695.7 695.7 3.60 20456 5689 Cr loss 598.9 598.9 0.00 1923 0 Cr2p1 583.6 583.6 3.76 32254 8581 Cr2p3 574.4 574.4 7.27 62434 8584 O 1s 530.5 530.5 2.80 975 348 N 1s 396.8 396.8 1.76 264 150 Ar2s 320.1 320.1 1.96 659 336 C 1s 282.4 282.4 1.00 241 241 Ar2p 242.6 242.6 3.06 1092 357 Cr3s 74.2 74.2 0.62 5068 8234 Cr3p 42.1 42.1 1.22 10507 8634

Page 127: Vol 1 - XPS of Elements & Native Oxides - 1999

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Chromium Metal (Z=24) Cr0

[CAS# 7440-47-3]E

lect

ron

Cou

nts

Binding Energy (eV)

95000

1400 01120 840 560 280

Cr

auge

r

Cr

auge

r

Cr

auge

r

Cr

auge

r

Cr

auge

r

Cr(

2s)

Cr

loss

C

r(2p

1)C

r(2p

3)

O(1

s)

N(1

s)

Ar(

2s)

C(1

s)

Ar(

2p)

Cr(

3s) C

r(3p

)

Wide Scan Survey Spectrum

Page 128: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Chromium Metal (Z=24) Cr0

[CAS# 7440-47-3]E

l e c t r o n C

o u n t s

Binding Energy (eV)

7500

600 570594 588 582 576

Baseline: 588.65 to 570.00 eV# 1: 574.29 eV 0.92 eV 139648.88 cts 49.71%# 2: 575.27 eV 1.33 eV 30687.59 cts 10.92%# 3: 576.72 eV 1.90 eV 17309.39 cts 6.16%# 4: 583.50 eV 1.28 eV 69637.58 cts 24.79%# 5: 584.64 eV 1.92 eV 18793.93 cts 6.69%# 6: 586.21 eV 2.10 eV 4825.52 cts 1.72%3 iterations, chi square = 2.7244

Cu (2p3) at 932.67 eVAu (4f7) 83.98 eV

Ag FWHM: 0.49 eVG:L Ratio: 70:30

∆E = 9.21 eV

Cr (2p 3/2)BE = 574.29 eV

Cr (2p 1/2)BE = 583.50

Page 129: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Chromium Metal (Z=24) Cr0

[CAS# 7440-47-3]E

lect

ron

Cou

nts

Binding Energy (eV)

3600

40 -1030 20 10 0

Valence Bands[Ar] 3d54s1

I.E. = 653 kJ/mol

BE = 3.2 eV

BE = 1.4 eV

Page 130: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Cesium (Z=55) in Cesium Chloride (FW=168.36) Cs : CsCl[CAS# 7647-17-8]

Detailed Surface Composition Table

Description: CESIUM CHLORIDE (CsCl) CRYSTAL (FRESHLY EXPOSED BULK)Date: Sat Jun 13 1987

Corrected Exper. Sens Norm Relative Signal BE BE Factor Area Area Atom % O Auger 977.2 973.9 0.00 4196 0 Cs Auger 952.5 949.2 4.33 5221 1205 Cs Auger 932.0 928.7 0.14 53096 376788 Cs Auger 918.6 915.3 0.00 24465 0 Cs Auger 870.5 867.2 0.00 1909 0 Ca Auger 857.2 853.9 0.16 6889 42395 Cs Auger 844.2 840.9 0.00 4224 0 Cs loss 761.8 758.5 0.00 42929 0 Cs3d3 739.0 735.7 9.36 240116 25656 * Cs3d5 725.1 721.7 13.81 252994 18317 25.36 * O 1s 531.8 528.5 2.23 15222 6820 9.44 Na Auger 497.3 494.0 2.70 4914 1818 * C 1s 285.0 281.7 1.00 29150 29065 40.24 Cl2s 268.5 265.2 1.72 26957 15647 Cs4s 238.0 234.7 1.13 11885 10480 Cl loss 217.0 213.7 3.40 7231 2126 * Cl2p 197.8 194.5 2.49 44945 18036 24.97

Page 131: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Cesium (Z=55) in Cesium Chloride (FW=168.36) Cs : CsCl[CAS# 7647-17-8]

Detailed Surface Composition Table (continued)

Description: CESIUM CHLORIDE (CsCl) CRYSTAL (FRESHLY EXPOSED BULK)Date: Sat Jun 13 1987

Cs4p1 180.9 177.6 1.40 13972 9947 S 2p 169.4 166.1 1.88 6581 3506 Cs4p3 158.5 155.2 2.89 31972 11047 Cs loss 119.1 115.8 2.52 3326 1321 Cs loss 109.9 106.6 4.96 7710 1553 Cs loss 98.2 94.9 0.00 51807 0 Cs (4p) 75.0 71.7 2.62 132903 50781 Na2s 62.9 59.6 0.52 425 820 Cl3p 9.8 6.5 0.18 12641 68860

Page 132: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Cesium (Z=55) in Cesium Chloride (FW=168.36) Cs : CsCl[CAS# 7647-17-8]

Ele

ctro

n C

ount

s

Binding Energy (eV)

440000

1000 0800 600 400 200

Cs

Aug

er

Cs

Aug

er

Cs

Aug

er

Cs

Aug

er

Ca(

Aug

er)

Cs

Aug

er

Cs

loss

Cs(

3d3)

Cs(

3d5)

O(1

s)

Na(

Aug

er)

C(1

s)C

l(2s)

Cs(

4s)

Cl l

oss

Cl(2

p)C

s(4p

1)S

(2p)

Cs(

4p3)

Cs

loss

C

s lo

ss

Cs

loss

Cs

(4p)

Cl(3

p)

S(2

s)

Wide Scan Survey SpectrumCharge Neutralizer ON

Page 133: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Cesium (Z=55) in Cesium Chloride (FW=168.36) Cs : CsCl[CAS# 7647-17-8]

Ele

ctro

n C

ount

s

Binding Energy (eV)

14000

732 712728 724 720 716

Baseline: 726.67 to 716.96 eV# 1: 721.94 eV 1.85 eV 479966.69 cts 100.00%12 iterations, chi square = 3.6261

Differential Charging Effect(visible on all high resolution spectra)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.70 eVG:L Ratio: 90:10

Charge Shift = 3.69 eV

Cs (3d 5/2)BE = 725.6 eV

Page 134: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Cesium (Z=55) in Cesium Chloride (FW=168.36) Cs : CsCl[CAS# 7647-17-8]

E

l e c t r o n C

o u n t s

Binding Energy (eV)

6000

15 -511 7 3 -1

Baseline: 14.45 to -1.71 eV# 1: 1.06 eV 1.43 eV 21283.77 cts 7.65%# 2: 2.13 eV 1.43 eV 44370.99 cts 15.95%# 3: 6.69 eV 1.34 eV 34202.22 cts 12.29%# 4: 7.79 eV 1.33 eV 82076.83 cts 29.50%# 5: 9.32 eV 1.65 eV 55970.18 cts 20.11%# 6: 11.55 eV 1.48 eV 20811.38 cts 7.48%# 7: 12.76 eV 1.24 eV 19541.80 cts 7.02%4 iterations, chi square = 1.8851

Valence Bands[Xe] 6s1

I.E. (Cs) = 376 kJ/molCharge Shift = 3.69 eV

Cl (3s)BE = 16.4 eV

Cs (4d)BE = 11.5 eV

Cl (3p)BE = 5.8 eV

Differential Charging Effect

Page 135: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Cesium (Z=55) in Cesium Chloride (FW=168.36) Cs : CsCl[CAS# 7647-17-8]

Ele

ctro

n C

ount

s

Binding Energy (eV)

8000

295 275291 287 283 279

Baseline: 286.65 to 278.31 eV# 1: 281.31 eV 1.49 eV 21543.35 cts 22.62%# 2: 282.49 eV 1.68 eV 73703.61 cts 77.38%3 iterations, chi square = 2.6922

Differential Charging Effect

C (1s)BE (HC) = 285.0 eV

Charge Shift = 3.69 eV

C-C, C-RBE = 285.0 eV

Page 136: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Copper Metal (Z=29) Cu0

[CAS# 7440-50-8]

Detailed Surface Composition Table

Description: Copper (Cu) [Cuprum = Cu] Sum of 15 repetitive etch/scansDate: Wed Feb 16 1994

Corrected Exper. Sens Norm Relative Signal BE BE Factor Area Area Cu2s 1097.2 1097.2 4.36 26313 6038 Cu2p1 952.6 952.6 7.36 106374 14447 Cu2p3 932.7 932.7 14.33 185987 12979 Cu Auger 719.5 719.5 0.00 12611 0 Cu Auger 647.5 647.5 0.00 15796 0 Cu Auger 628.2 628.2 0.00 2616 0 Cu Auger 568.1 568.1 0.00 132965 0 Cu Auger 548.1 548.1 0.00 12303 0 Ar2s 319.5 319.5 1.96 648 331 Ar2p 241.6 241.6 3.06 954 312 Cu3s 122.1 122.1 0.98 13768 14026 Cu3p 74.9 74.9 2.56 41721 16304 Cu3d 2.8 2.8 0.61 11304 18400

Page 137: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Copper Metal (Z=29) Cu0

[CAS# 7440-50-8]E

lect

ron

Cou

nts

Binding Energy (eV)

310000

1400 01120 840 560 280

Cu(

2s)

Cu(

2p1)

Cu(

2p3)

Cu(

Aug

er)

Cu(

Aug

er)

Cu(

Aug

er)

Cu(

Aug

er)

Cu(

Aug

er)

Ar(

2s)

Ar(

2p)

Cu(

3s)

Cu(

3p)

Cu(

3d)

Wide Scan Survey Spectrum

Page 138: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Copper Metal (Z=29) Cu0

[CAS# 7440-50-8]E

l e c t r o n C

o u n t s

Binding Energy (eV)

50000

970 920960 950 940 930

Baseline: 969.05 to 922.20 eV# 1: 931.13 eV 2.50 eV 78375.76 cts 4.68%# 2: 932.62 eV 0.85 eV 885870.00 cts 52.94%# 3: 936.56 eV 1.60 eV 8575.50 cts 0.51%# 4: 943.60 eV 2.78 eV 33792.36 cts 2.02%# 5: 945.85 eV 1.76 eV 18557.13 cts 1.11%# 6: 947.52 eV 2.70 eV 34747.78 cts 2.08%# 7: 950.51 eV 2.60 eV 63514.63 cts 3.80%# 8: 952.43 eV 1.46 eV 404003.22 cts 24.14%# 9: 953.87 eV 3.91 eV 85451.89 cts 5.11%#10: 963.60 eV 1.04 eV 2511.25 cts 0.15%#11: 964.96 eV 2.28 eV 14658.61 cts 0.88%#12: 933.72 eV 1.40 eV 43260.42 cts 2.59%4 iterations, chi square = 6.0599

Cu (2p3) at 932.67 eVAu (4f7) 83.98 eV

Ag FWHM: 0.49 eVG:L Ratio: 60:40

∆E = 19.81 eV

Cu (2p 3/2)BE = 932.62 eV

Cu (2p 1/2)BE = 952.43 eV

Page 139: Vol 1 - XPS of Elements & Native Oxides - 1999

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Copper Metal (Z=29) Cu0

[CAS# 7440-50-8]

Ele

ctro

n C

ount

s

Binding Energy (eV)

28000

40 -1030 20 10 0

Valence Bands[Ar] 3d104s1

I.E. = 745 kJ/molMedium Energy Resolution

Page 140: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Copper Metal (Z=29) Cu0

[CAS# 7440-50-8]E

lect

ron

Cou

nts

Binding Energy (eV)

36000

15 -511 7 3 -1

Valence Bands[Ar] 3d104s1

I.E. = 745 kJ/mol

High Energy Resolution(different sample)

BE = 3.9 eV

BE = 1.9 eVBE = 2.9 eV

Page 141: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Dysprosium (Z=66) Dy0

[CAS# 7429-91-6]

Detailed Surface Composition Table

Description: Dysprosium (Dy)Date: Wed Mar 23 1994

Corrected Exper. Sens Norm Relative Signal BE BE Factor Area Area Dy 3d3 1335.1 1335.1 0.00 25512 0 Dy 3d5 1296.2 1296.2 0.00 70574 0 O Auger 975.3 975.3 0.00 2116 0 O 1s 530.8 530.8 2.80 4453 1591 Dy Auger 513.9 513.9 1.51 14142 9367 Dy4s 412.6 412.6 1.54 1653 1070 Dy Auger 363.7 363.7 1.85 5388 2913 Dy4p3 295.6 295.6 4.11 16830 4092 Dy Auger 210.9 210.9 11.57 10520 909 Dy4d 155.0 155.0 11.67 14858 1274 Dy5s 48.4 48.4 0.30 989 3325 Dy4f 7.8 7.8 2.60 8467 3262

Page 142: Vol 1 - XPS of Elements & Native Oxides - 1999

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Dysprosium (Z=66) Dy0

[CAS# 7429-91-6]E

lect

ron

Cou

nts

Binding Energy (eV)

40000

1400 01120 840 560 280

Dy

3d3

Dy

3d5

O(A

uger

)

O(1

s)D

y au

ger

Dy(

4s) D

y au

ger

Dy(

4p3)

Dy

auge

r

Dy(

4d)

Dy(

5s) D

y(4f

)

Wide Scan Survey Spectrum

Page 143: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Dysprosium (Z=66) Dy0

[CAS# 7429-91-6]

E

l e c t r o n C

o u n t s

Binding Energy (eV)

5750

170 140164 158 152 146

Baseline: 158.30 to 151.00 eV# 1: 152.34 eV 0.90 eV 31650.15 cts 33.83%# 2: 153.31 eV 1.00 eV 7324.38 cts 7.83%# 3: 155.12 eV 1.20 eV 38024.82 cts 40.65%# 4: 156.91 eV 1.23 eV 16553.77 cts 17.69%19 iterations, chi square = 2.7690

Cu (2p3) at 932.67 eVAu (4f7) 83.98 eV

Ag FWHM: 0.49 eVG:L Ratio: 90:10

∆E = 2.78 eV

Dy (4d 5/2)BE = 152.34 eV

Dy (4d 3/2)BE = 155.12 eV

Page 144: Vol 1 - XPS of Elements & Native Oxides - 1999

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Dysprosium (Z=66) Dy0

[CAS# 7429-91-6]E

l e c t r o n C

o u n t s

Binding Energy (eV)

21000

40 -1030 20 10 0

Baseline: 15.30 to -1.80 eV# 1: 0.47 eV 1.07 eV 19161.41 cts 2.70%# 2: 1.52 eV 1.43 eV 17099.54 cts 2.41%# 3: 4.00 eV 0.91 eV 120608.80 cts 16.97%# 4: 4.80 eV 1.49 eV 59035.76 cts 8.31%# 5: 6.46 eV 1.00 eV 15809.83 cts 2.23%# 6: 7.80 eV 1.17 eV 206204.25 cts 29.02%# 7: 9.27 eV 1.33 eV 166768.36 cts 23.47%# 8: 10.56 eV 1.30 eV 58354.42 cts 8.21%# 9: 12.44 eV 1.63 eV 47483.34 cts 6.68%4 iterations, chi square = 4.4901

Valence Bands[Xe] 4f106s2

I.E. = 572 kJ/molDy (4f 7/2)

Dy (4f 5/2)

Dy (5p)

Dy (6s) ?

Page 145: Vol 1 - XPS of Elements & Native Oxides - 1999

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Erbium Metal (Z=68) Er0

[CAS# 7440-52-0]

Detailed Surface Composition Table

Description: Erbium (Er)Date: Sat Mar 19 1994

Corrected Exper. Sens Norm Relative Signal BE BE Factor Area Area Er 3d5 1358.7 1358.7 0.00 33954 0 O auger 973.5 973.5 0.00 2431 0 Er auger 634.5 634.5 0.00 16604 0 Er auger 715.1 715.1 0.00 25319 0 Er auger 586.2 586.2 0.00 29104 0 O 1s 531.6 531.6 2.25 3013 1340 Er4s 450.3 450.3 0.00 318377 0 Er4p3 320.8 320.8 4.22 39800 9433 Er auger 274.5 274.5 4.41 119830 27172 Er auger 182.8 182.8 5.65 20725 3668 Er 4d 168.1 168.1 8.24 21412 2599 Er auger 98.7 98.7 0.00 76488 0 Er5s 57.4 57.4 0.36 33056 90903 Er5p 24.5 24.5 1.06 4919 4625 Er4f 9.8 9.8 4.84 21349 4410

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Erbium Metal (Z=68) Er0

[CAS# 7440-52-0]E

lect

ron

Cou

nts

Binding Energy (eV)

50000

1400 01120 840 560 280

Er(

4s)

Er(

4p3)

Er

auge

r

Er

auge

r

Er

(4d)

Er

auge

r

Er(

5s)

Er(

5p) Er(

4f)

O(A

uger

)

O(1

s)

Er

auge

r

Er

auge

r

Er

auge

r

Er

3d5

Wide Scan Survey Spectrum

Page 147: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Erbium Metal (Z=68) Er0

[CAS# 7440-52-0]E

l e c t r o n C

o u n t s

Binding Energy (eV)

17000

190 150182 174 166 158

Baseline: 171.85 to 165.55 eV# 1: 167.25 eV 1.00 eV 250183.38 cts 47.90%# 2: 168.21 eV 0.96 eV 108833.97 cts 20.84%# 3: 169.31 eV 1.06 eV 109876.07 cts 21.04%# 4: 170.15 eV 1.62 eV 53368.37 cts 10.22%7 iterations, chi square = 2.5123

Cu (2p3) at 932.67 eVAu (4f7) 83.98 eV

Ag FWHM: 0.49 eVG:L Ratio: 80:20

∆E = 2.06 eV ?

Er (4d 5/2)BE = 167.25 eV

Er (4d 3/2)BE = 169.31 eV

Page 148: Vol 1 - XPS of Elements & Native Oxides - 1999

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Erbium Metal (Z=68) Er0

[CAS# 7440-52-0]E

l e c t r o n C

o u n t s

Binding Energy (eV)

10000

35 -527 19 11 3

Baseline: 15.90 to -1.00 eV# 1: 0.49 eV 0.89 eV 13020.73 cts 1.80%# 2: 1.41 eV 0.99 eV 9554.18 cts 1.32%# 3: 2.51 eV 1.10 eV 6921.11 cts 0.96%# 4: 3.49 eV 1.00 eV 3205.23 cts 0.44%# 5: 3.74 eV 1.00 eV 2784.34 cts 0.39%# 6: 4.90 eV 0.75 eV 94333.20 cts 13.05%# 7: 5.65 eV 0.67 eV 52913.34 cts 7.32%# 8: 6.98 eV 0.82 eV 42738.63 cts 5.91%# 9: 7.90 eV 0.85 eV 112630.27 cts 15.58%#10: 8.76 eV 0.89 eV 126269.44 cts 17.46%#11: 9.56 eV 0.85 eV 100507.22 cts 13.90%#12: 10.32 eV 1.06 eV 53097.91 cts 7.34%#13: 11.61 eV 3.02 eV 74300.20 cts 10.28%#14: 6.27 eV 0.66 eV 30756.25 cts 4.25%3 iterations, chi square = 1.9452

Valence Bands[Xe] 4f126s2

I.E. = 589 kJ/mol

Er (4f)

Er (5d, 6s, 6p) ?

Er (5p)

Page 149: Vol 1 - XPS of Elements & Native Oxides - 1999

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Europium (Z=63) Oxide (FW=351.92) Eu2O3(pellet)

Detailed Surface Composition Table

Description: Eu2O3 (99.95%) Aldrich Chem Co. lot# 02914LV, 90 TOA, mesh at <1mmDate: Sat May 21 1994

Corrected Exper. Sens Norm Relative Signal BE BE Factor Area Area Atom % O Auger 976.3 971.2 0.00 21515 0 Eu Auger 762.7 757.5 0.00 6281 0 Eu Auger 657.9 652.7 0.00 2774 0 Eu Auger 637.0 631.9 0.00 40588 0 O loss 549.1 544.0 0.00 22862 0 * O 1s 531.6 526.4 2.29 111319 48642 52.18 Eu Auger 516.8 511.7 0.00 9217 0 Eu Auger 502.6 497.5 0.00 13127 0 Eu Auger 479.8 474.7 0.00 6373 0 Eu4s 364.6 359.5 1.36 27207 20001 C loss 300.7 295.6 0.00 4211 0 * C 1s 285.0 279.9 1.00 33334 33190 35.60 Eu4p3 260.6 255.5 3.82 35699 9347 Eu loss 166.6 161.5 0.00 14082 0 * Eu4d 135.6 130.5 10.24 116680 11391 12.22 O+Eu 21.6 16.4 0.00 22352 0

Page 150: Vol 1 - XPS of Elements & Native Oxides - 1999

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Europium (Z=63) Oxide (FW=351.92) Eu2O3(pellet)

Ele

ctro

n C

ount

s

Binding Energy (eV)

250000

1000 0800 600 400 200

O(A

uger

)

Eu

(Aug

er)

Eu

(Aug

er)

Eu

(Aug

er)

O lo

ss

O

(1s)

Eu

(Aug

er)

Eu

(Aug

er)

Eu

(Aug

er)

Eu(

4s)

C lo

ss

C(1

s)

Eu(

4p3)

Eu

loss

Eu(

4d)

O+

Eu

Wide Scan Survey SpectrumCharge Neutralizer ON

Page 151: Vol 1 - XPS of Elements & Native Oxides - 1999

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Europium (Z=63) Oxide (FW=351.92) Eu2O3(pellet)

E

l e c t r o n C

o u n t s

Binding Energy (eV)

24000

180 110166 152 138 124

Baseline: 143.10 to 120.40 eV# 1: 122.95 eV 2.12 eV 72102.86 cts 4.59%# 2: 124.57 eV 2.83 eV 59064.70 cts 3.76%# 3: 125.72 eV 2.50 eV 34457.64 cts 2.20%# 4: 129.48 eV 3.00 eV 71143.59 cts 4.53%# 5: 130.66 eV 3.58 eV 748784.25 cts 47.70%# 6: 136.23 eV 4.28 eV 584123.56 cts 37.21%4 iterations, chi square = 4.0568

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.70 eVG:L Ratio: 80:20

∆E = 5.57 eVCharge Shift = 5.27 eV

Eu (4d 5/2)BE = 135.9 eV

Eu (4d 3/2)BE = 141.5 eV

Page 152: Vol 1 - XPS of Elements & Native Oxides - 1999

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Europium (Z=63) Oxide (FW=351.92) Eu2O3(pellet)

E

l e c t r o n C

o u n t s

Binding Energy (eV)

20000

40 -1030 20 10 0

Baseline: 26.20 to -6.60 eV# 1: -3.23 eV 2.70 eV 140750.42 cts 7.31%# 2: 0.14 eV 2.53 eV 235059.77 cts 12.20%# 3: 2.14 eV 2.25 eV 345256.19 cts 17.92%# 4: 4.02 eV 2.10 eV 197136.98 cts 10.23%# 5: 5.77 eV 2.17 eV 98182.72 cts 5.10%# 6: 13.77 eV 2.98 eV 216314.42 cts 11.23%# 7: 16.22 eV 2.70 eV 286994.63 cts 14.90%# 8: 18.61 eV 2.50 eV 206650.34 cts 10.73%# 9: 20.94 eV 2.33 eV 146691.25 cts 7.62%#10: 22.81 eV 2.22 eV 53111.95 cts 2.76%3 iterations, chi square = 3.8450

Valence Bands[Xe] 4f76s5

I.E. (Eu) = 547 kJ/molCharge Shift = 5.27 eV

Eu (4f)Eu (5p)

Page 153: Vol 1 - XPS of Elements & Native Oxides - 1999

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Europium (Z=63) Oxide (FW=351.92) Eu2O3(pellet)

E

l e c t r o n C

o u n t s

Binding Energy (eV)

10000

290 270286 282 278 274

Baseline: 288.40 to 276.10 eV# 1: 279.73 eV 1.69 eV 146709.75 cts 66.75%# 2: 280.96 eV 1.40 eV 21274.08 cts 9.68%# 3: 283.63 eV 1.55 eV 14996.72 cts 6.82%# 4: 284.73 eV 1.50 eV 36813.13 cts 16.75%4 iterations, chi square = 3.4346

C (1s)BE (HC) = 285.0 eV

Charge Shift = 5.27 eV

C-C, C-RBE = 285.0 eV

CO3

BE = 290.0 eV

Page 154: Vol 1 - XPS of Elements & Native Oxides - 1999

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Europium (Z=63) Oxide (FW=351.92) Eu2O3(pellet)

E

l e c t r o n C

o u n t s

Binding Energy (eV)

36000

535 515531 527 523 519

Baseline: 530.35 to 521.40 eV# 1: 524.00 eV 1.54 eV 309628.56 cts 16.17%# 2: 525.60 eV 1.50 eV 310511.34 cts 16.22%# 3: 526.47 eV 1.93 eV 1294264.00 cts 67.61%9 iterations, chi square = 2.8771

O (1s)Charge Shift = 5.27 eV

CO3

BE = 531.7 eV

Eu oxideBE = 529.3 eV

Page 155: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Fluorine (Z=9) in Lithium Fluoride (FW=25.94) F : LiF[CAS# 7789-24-4]

Detailed Surface Composition Table

Description: Fluorine (F) in the form of LiF powder (Mesh-screen at 1 mm)Date: Fri Jul 8 1988

Corrected Exper. Sens Norm Relative Signal BE BE Factor Area Area Atom % F Auger 877.9 874.0 0.09 5554 59381 F Auger 858.9 855.0 0.00 26224 0 F Auger 832.8 828.9 0.00 66803 0 F loss 711.5 707.5 0.00 33541 0 F loss 703.3 699.4 0.00 8945 0 * F 1s 685.7 681.8 2.74 163796 59837 38.25 * O 1s 532.6 528.7 2.23 3844 1723 1.10 * C 1s 285.0 281.1 1.00 5145 5127 3.28 * Li1s 55.3 51.3 0.07 6330 89759 57.37 F 2s 29.2 25.3 0.27 10847 40857

Page 156: Vol 1 - XPS of Elements & Native Oxides - 1999

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Fluorine (Z=9) in Lithium Fluoride (FW=25.94) F : LiF[CAS# 7789-24-4]

Ele

ctro

n C

ount

s

Binding Energy (eV)

26000

1000 0800 600 400 200

F(A

uger

)F

(Aug

er)

F(A

uger

)

F lo

ss

F lo

ss

F

loss

F(1

s)

O(1

s)

Ca(

2p)

C(1

s)

Li(1

s)

F(2

s)

Wide Scan Survey SpectrumCharge Neutralizer ON

Page 157: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Fluorine (Z=9) in Lithium Fluoride (FW=25.94) F : LiF[CAS# 7789-24-4]

Ele

ctro

n C

ount

s

Binding Energy (eV)

6800

692 672688 684 680 676

Baseline: 687.06 to 676.86 eV# 1: 681.54 eV 1.84 eV 170211.44 cts 92.70%# 2: 682.77 eV 1.80 eV 13412.92 cts 7.30%5 iterations, chi square = 1.4618

F (1s)Charge Shift = 3.57 eVF (ionic LiF)

BE = 685.1 eV

Page 158: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Fluorine (Z=9) in Lithium Fluoride (FW=25.94) F : LiF[CAS# 7789-24-4]

Ele

ctro

n C

ount

s

Binding Energy (eV)

250

292 272288 284 280 276

Baseline: 286.04 to 276.86 eV# 1: 281.43 eV 1.69 eV 3913.04 cts 83.39%# 2: 282.77 eV 1.69 eV 779.20 cts 16.61%3 iterations, chi square = 1.4217

C (1s)BE (HC) = 285.0 eV

Charge Shift = 3.57 eV

C-C, C-RBE = 285.0 eV

C-ORBE = 286.3 eV

Page 159: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Iron Metal (Z=26) Fe0

[CAS# 7439-89-6]

Detailed Surface Composition Table

Description: Iron (Fe) [Ferrum = Fe] Sum of 15 repetitive etch/scans, 90 deg TOA

Date: Thu Feb 10 1994

Corrected Exper. Sens Norm Relative Signal BE BE Factor Area Area Fe Auger 923.3 923.3 0.00 3190 4983 Fe Auger 894.1 894.1 0.00 2001 0 Fe Auger 888.1 888.1 0.65 6145 9483 Fe2s 839.3 839.3 4.04 89324 22121 Fe Auger 783.7 783.7 0.00 32355 0 Fe loss 770.6 770.6 0.00 2005 0 Fe2p1 720.0 720.0 5.12 49052 9584 Fe2p3 707.0 707.0 9.93 94534 9524 O 1s 530.2 530.2 2.80 2644 944 Ar2s 319.0 319.0 1.96 848 433 C 1s 282.6 282.6 1.00 736 736 Ar2p 241.9 241.9 3.06 1817 594 Fe3s 91.0 91.0 0.77 7631 9942 Fe3p 52.6 52.6 1.73 23457 13567

Page 160: Vol 1 - XPS of Elements & Native Oxides - 1999

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Iron Metal (Z=26) Fe0

[CAS# 7439-89-6]E

lect

ron

Cou

nts

Binding Energy (eV)

70000

1400 01120 840 560 280

Fe(

Aug

er)

Fe(

Aug

er)

Fe(

Aug

er)

Fe(

2s)

Fe(

Aug

er)

Fe(

2p1)

Fe(

2p3)

O(1

s)

Ar(

2s)

C(1

s)

Ar(

2p)

Fe(

3s) F

e(3p

)

Wide Scan Survey Spectrum

Page 161: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Iron Metal (Z=26) Fe0

[CAS# 7439-89-6]E

l e c t r o n C

o u n t s

Binding Energy (eV)

8500

728 698722 716 710 704

Baseline: 726.90 to 703.15 eV# 1: 706.70 eV 0.78 eV 126029.13 cts 35.10%# 2: 707.49 eV 0.87 eV 64889.17 cts 18.07%# 3: 708.36 eV 1.06 eV 28116.42 cts 7.83%# 4: 709.50 eV 1.40 eV 16709.25 cts 4.65%# 5: 711.24 eV 2.12 eV 9455.57 cts 2.63%# 6: 719.87 eV 1.42 eV 78777.45 cts 21.94%# 7: 721.18 eV 1.38 eV 24048.51 cts 6.70%# 8: 722.47 eV 1.28 eV 7597.42 cts 2.12%# 9: 723.78 eV 1.52 eV 3482.99 cts 0.97%3 iterations, chi square = 3.0434

Cu (2p3) at 932.67 eVAu (4f7) 83.98 eV

Ag FWHM: 0.49 eVG:L Ratio: 70:30

∆E = 13.17 eV

Fe (2p 3/2)BE = 706.70 eV

Fe (2p 1/2)BE = 719.87 eV

Page 162: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Iron Metal (Z=26) Fe0

[CAS# 7439-89-6]E

lect

ron

Cou

nts

Binding Energy (eV)

12000

40 -1030 20 10 0

Valence Bands[Ar] 3d64s2

I.E. = 759 kJ/mol

BE = 2.6 eV

BE = 0.8 eV

Page 163: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Gallium Metal (Z=31) Ga0

[CAS# 74400-55-3]

Detailed Surface Composition Table

Description: GALLIUM (Ga) SHOT FRESHLY CUT & ION ETCHED UNTIL SURFACE MELTEDDate: Friday 6/12/1987

Corrected Exper. Sens Norm Relative Signal BE BE Factor Area Area O Auger 979.7 979.3 0.00 10644 0 Cu2p3 933.9 933.5 6.60 3328 505 Ga Auger 707.3 706.8 0.01 2636 0 Ga Auger 655.6 655.1 0.01 6884 0 Ga Auger 640.4 640.0 0.01 5539 0 Ga Auger 629.3 628.8 0.01 2811 0 Ga Auger 588.9 588.4 0.01 54965 0 Ga Auger 570.8 570.3 0.01 16732 0 O 1s 532.4 531.9 2.22 43666 19655 Ga Auger 513.4 513.0 0.00 43071 0 Ga Auger 503.7 503.2 0.00 29335 0 Ga Auger 486.3 485.8 0.00 35189 0 Ga Auger 447.3 446.8 0.02 7548 0 Ga Auger 432.9 432.4 0.02 40507 0 Ga Auger 418.8 418.4 0.00 174615 0 Ga Auger 405.9 405.5 0.02 13116 0 Ga Auger 391.7 391.2 0.00 99144 0 Ga Auger 363.6 363.1 0.02 1253 0

Page 164: Vol 1 - XPS of Elements & Native Oxides - 1999

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Gallium Metal (Z=31) Ga0

[CAS# 74400-55-3]

Detailed Surface Composition Table (continued)

Description: GALLIUM (Ga) SHOT FRESHLY CUT & ION ETCHED UNTIL SURFACE MELTEDDate: Friday 6/12/1987

Corrected Exper. Sens Norm Relative Signal BE BE Factor Area Area C 1s 285.0 284.5 0.02 25849 0 Ar2p 242.5 242.0 3.17 3994 1260 Ga loss 173.3 172.8 0.00 12068 0 Ga3s 158.9 158.4 1.27 38791 30453 Ga loss 132.7 132.3 0.00 6489 0 Ga loss 119.4 118.9 0.00 40117 0 Ga3p 103.5 103.0 3.80 112601 29628 Cu3p 74.7 74.3 3.01 5502 1830 Ga loss 46.3 45.8 0.00 3807 0 Ga loss 32.1 31.7 0.00 19031 0 Ga3d 18.0 17.5 1.38 57333 41534

Page 165: Vol 1 - XPS of Elements & Native Oxides - 1999

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Gallium Metal (Z=31) Ga0

[CAS# 74400-55-3]E

lect

ron

Cou

nts

Binding Energy (eV)

320000

1000 0800 600 400 200

O(A

uger

)

Cu(

2p3)

Ga(

Aug

er)

Ga(

Aug

er)

Ga(

Aug

er)

Ga(

Aug

er)

Ga(

Aug

er)

Ga(

Aug

er) O(1

s)G

a(A

uger

)G

a(A

uger

)G

a(A

uger

)

Ga(

Aug

er)

Ga(

Aug

er)

Ga(

Aug

er)

Ga(

Aug

er)

Ga(

Aug

er)

C(1

s)

Ar(

2p)

Ga

loss

Ga(

3s)

Ga

loss

G

a lo

ss

Ga(

3p)

Cu(

3p)

Ga

loss

G

a lo

ss

Ga(

3d)

Ga(

Aug

er

Wide Scan Survey Spectrum

Page 166: Vol 1 - XPS of Elements & Native Oxides - 1999

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Gallium Metal (Z=31) Ga0

[CAS# 74400-55-3]

E

l e c t r o n C

o u n t s

Binding Energy (eV)

3000

22 1420.4 18.8 17.2 15.6

Baseline: 21.69 to 17.14 eV# 1: 18.47 eV 0.57 eV 48573.56 cts 48.95%# 2: 18.93 eV 0.53 eV 32415.12 cts 32.67%# 3: 19.31 eV 0.66 eV 9623.82 cts 9.70%# 4: 20.22 eV 1.43 eV 8618.05 cts 8.68%4 iterations, chi square = 1.3316

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.55 eVG:L Ratio: 70:30

∆E = 0.46 eV

Ga (3d 5/2)BE = 17.47 eV

Ga (3d 3/2)BE = 18.93 eV

Ga suboxide ?

Page 167: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Gallium Metal (Z=31) Ga0

[CAS# 74400-55-3]E

lect

ron

Cou

nts

Binding Energy (eV)

1200

15 -511 7 3 -1

Valence Bands[Ar] 3d104s24p1

I.E. = 579 kJ/mol

Ga (4s, 4p) ?

Page 168: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Gallium Metal (Z=31) Ga0

[CAS# 74400-55-3]

Ele

ctro

n C

ount

s

Binding Energy (eV)

11000

1130 11101126 1122 1118 1114

Baseline: 1121.96 to 1112.04 eV# 1: 1116.49 eV 1.06 eV 223436.20 cts 76.86%# 2: 1117.89 eV 2.25 eV 67273.43 cts 23.14%7 iterations, chi square = 2.1934

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.55 eVG:L Ratio: 50:50

Ga (2p 3/2)BE = 1116.49 eV

Ga suboxide ?

Page 169: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Gadolinium Metal (Z=64) Gd0

[CAS# 7440-54-2]

Detailed Surface Composition Table

Description: Gadolinium (Gd)Date: Wed Mar 16 1994

Corrected Exper. Sens Norm Relative Signal BE BE Factor Area Area Gd3p3 1378.9 1378.9 19.74 13742 696 Gd3d3 1219.6 1219.6 23.67 42608 1800 Gd3d5 1186.9 1186.9 35.02 80083 2287 Gd Auger 841.1 841.1 0.00 11426 0 Gd Auger 763.4 763.4 0.00 75307 0 Gd Auger 600.0 600.0 0.00 28967 0 O 1s 530.5 530.5 2.80 4571 1634 Gd Auger 460.2 460.2 7.66 14392 1878 Gd4s 378.2 378.2 1.49 1450 976 Gd4p1 290.6 290.6 1.80 2942 1636 Gd4p3 271.3 271.3 3.89 14873 3825 Gd4d 141.1 141.1 10.64 21358 2008 Gd5p 20.5 20.5 0.88 2835 3217 Gd4f 7.7 7.7 1.49 10008 6696

Page 170: Vol 1 - XPS of Elements & Native Oxides - 1999

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Gadolinium Metal (Z=64) Gd0

[CAS# 7440-54-2]E

lect

ron

Cou

nts

Binding Energy (eV)

50000

1400 01120 840 560 280

Gd

3p3

Gd(

3d3) G

d(3d

5

Gd

auge

r

O(1

s)

Gd

auge

r

Gd(

4s)

Gd(

4p3)

Gd(

4d)

Gd(

5p)

Gd(

4f)

Gd(

4p1)

Gd

auge

r

Gd

auge

r

Wide Scan Survey Spectrum

Page 171: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Gadolinium Metal (Z=64) Gd0

[CAS# 7440-54-2]E

l e c t r o n C

o u n t s

Binding Energy (eV)

30000

170 130162 154 146 138

Baseline: 153.10 to 134.80 eV# 1: 140.31 eV 1.05 eV 230059.36 cts 19.80%# 2: 141.35 eV 0.99 eV 208954.80 cts 17.98%# 3: 142.34 eV 0.98 eV 175585.84 cts 15.11%# 4: 143.28 eV 0.95 eV 125340.17 cts 10.78%# 5: 144.17 eV 0.97 eV 87179.98 cts 7.50%# 6: 145.05 eV 0.97 eV 38656.97 cts 3.33%# 7: 147.32 eV 2.26 eV 296431.59 cts 25.51%3 iterations, chi square = 4.8481

Cu (2p3) at 932.67 eVAu (4f7) 83.98 eV

Ag FWHM: 0.49 eVG:L Ratio: 90:10

∆E = 2.03 eV

Gd (4d 5/2)BE = 140.31 eV

Gd (4d 3/2)BE = 142.34 eV

Page 172: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Gadolinium Metal (Z=64) Gd0

[CAS# 7440-54-2]E

l e c t r o n C

o u n t s

Binding Energy (eV)

23000

25 -519 13 7 1

Baseline: 13.40 to 3.55 eV# 1: 5.98 eV 2.26 eV 35135.21 cts 5.20%# 2: 8.06 eV 1.15 eV 505124.34 cts 74.76%# 3: 9.21 eV 1.39 eV 91087.77 cts 13.48%# 4: 10.76 eV 2.06 eV 44336.04 cts 6.56%16 iterations, chi square = 2.0540

Valence Bands[Xe] 4f75d16s2

I.E. = 592 kJ/mol

Gd (4f)BE = 5.98 eV

Page 173: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Germanium (Z=32) Ge0

[CAS# 7440-56-4]

Detailed Surface Composition Table

Description: Germanium (Ge) 90 deg TOADate: Thu Feb 24 1994

Corrected Exper. Sens Norm Relative Signal BE BE Factor Area Area Ge loss 1265.8 1265.8 0.00 3538 0 Ge2p1 1248.7 1248.7 9.06 23515 2597 Ge loss 1234.8 1234.8 0.00 14011 0 Ge2p3 1217.7 1217.7 17.90 45774 2557 Ge Auger 579.8 579.8 0.00 4419 0 O 1s 532.8 532.8 2.80 6356 2272 Ge Auger 524.8 524.8 0.06 9569 0 Ge Auger 443.6 443.6 0.00 33460 0 Ge Auger 433.0 433.0 0.00 23336 0 Ge Auger 412.3 412.3 0.00 18103 0 Ge loss 357.9 357.9 0.00 30579 0 Ge Auger 341.4 341.4 0.06 116938 0 Ge Auger 326.8 326.8 0.06 11188 0 Ge Auger 310.4 310.4 0.00 49574 0 C 1s 284.5 284.5 1.00 1921 1921 Ar2p 243.0 243.0 3.06 2516 822

Page 174: Vol 1 - XPS of Elements & Native Oxides - 1999

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Germanium (Z=32) Ge0

[CAS# 7440-56-4]

Detailed Surface Composition Table (continued)

Description: Germanium (Ge) 90 deg TOADate: Thu Feb 24 1994

Corrected Exper. Sens Norm Relative Signal BE BE Factor Area Area Ge Auger 197.5 197.5 0.06 7574 0 Ge3s 181.0 181.0 1.25 19065 15246 Ge loss 138.5 138.5 0.00 21406 0 Ge3p 121.3 121.3 2.45 56185 22927 Ge loss 45.7 45.7 0.00 12688 0 Ge3d 29.1 29.1 1.48 29407 19926

Page 175: Vol 1 - XPS of Elements & Native Oxides - 1999

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Germanium (Z=32) Ge0

[CAS# 7440-56-4]E

lect

ron

Cou

nts

Binding Energy (eV)

100000

1400 01120 840 560 280

Ge

loss

G

e(2p

1)G

e lo

ss

Ge(

2p3)

Ge(

Aug

er)

O(1

s)G

e(A

uger

)

Ge(

Aug

er)

Ge(

Aug

er)

Ge(

Aug

er)

Ge(

Aug

er)

Ge(

Aug

er)

Ge(

Aug

er)

C(1

s)

Ge(

Aug

er)

Ge(

3s)

Ge

loss

G

e (3

p)

Ge(

3d)

Ge(

3d)

Ar(

2p)

Ge

loss

Wide Scan Survey Spectrum

Page 176: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Germanium (Z=32) Ge0

[CAS# 7440-56-4]

Ele

ctro

n C

ount

s

Binding Energy (eV)

5200

40 2036 32 28 24

Baseline: 32.95 to 26.35 eV# 1: 29.15 eV 0.60 eV 62503.10 cts 59.84%# 2: 29.74 eV 0.59 eV 41939.73 cts 40.16%4 iterations, chi square = 1.4801

Cu (2p3) at 932.67 eVAu (4f7) 83.98 eV

Ag FWHM: 0.49 eVG:L Ratio: 80:20

∆E = 0.59 eV

Ge (3d 5/2)BE = 29.15 eV

Ge (3d 3/2)BE = 29.74 eV

Page 177: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Germanium (Z=32) Ge0

[CAS# 7440-56-4]E

lect

ron

Cou

nts

Binding Energy (eV)

200

10 -106 2 -2 -6

Valence Bands[Ar] 3d104s24p2

I.E. = 762 kJ/mol

BE = 1.8 eV

BE = 3.9 eV

Ar (3p)

Page 178: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Hafnium Metal (Z=72) Hf0

[CAS# 7440-58-6]

Detailed Surface Composition Table

Description: Hafnium (Hf)Date: Wed Mar 9 1994

Corrected Exper. Sens Norm Relative Signal BE BE Factor Area Area Hf Auger 1317.3 1317.3 0.00 7562 0 Hf Auger 1306.9 1306.9 0.00 3827 0 Hf4s 533.8 533.8 1.68 10684 6359 Hf4p1 437.3 437.3 2.00 11283 5628 Hf4p3 379.5 379.5 4.80 32891 6852 Ar2s 329.7 329.7 1.95 2254 1153 Hf4d3 221.3 221.3 6.19 36145 5836 Hf4d5 210.8 210.8 8.95 45513 5085 Zr3d 178.6 178.6 7.16 3466 484 Hf5s 62.3 62.3 0.36 1813 5096 Hf5p1 37.5 37.5 0.34 1322 3918 Hf4f 14.1 14.1 7.83 61827 7895

Page 179: Vol 1 - XPS of Elements & Native Oxides - 1999

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Hafnium Metal (Z=72) Hf0

[CAS# 7440-58-6]

Ele

ctro

n C

ount

s

Binding Energy (eV)

32000

1400 01120 840 560 280

Hf A

uger

H

f Aug

er

Hf(

4s)

Hf(

4p1)

Hf(

4p3)

Hf(

4d3)

Hf(

4d5)

Zr(

3d)

Hf(

5s)

Hf(

5p1)

Hf(

4f)

Ar(

2s)

Wide Scan Survey Spectrum

Page 180: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Hafnium Metal (Z=72) Hf0

[CAS# 7440-58-6]E

l e c t r o n C

o u n t s

Binding Energy (eV)

20000

26 622 18 14 10

Baseline: 20.00 to 12.50 eV# 1: 14.18 eV 0.44 eV 142692.13 cts 34.77%# 2: 14.62 eV 0.70 eV 53953.84 cts 13.15%# 3: 15.14 eV 0.70 eV 16051.88 cts 3.91%# 4: 15.86 eV 0.51 eV 122096.58 cts 29.75%# 5: 16.34 eV 0.73 eV 41271.61 cts 10.06%# 6: 16.95 eV 0.94 eV 22410.14 cts 5.46%# 7: 17.73 eV 0.75 eV 5312.73 cts 1.29%# 8: 18.50 eV 1.30 eV 6614.36 cts 1.61%4 iterations, chi square = 3.4672

Cu (2p3) at 932.67 eVAu (4f7) 83.98 eV

Ag FWHM: 0.49 eVG:L Ratio: 90:10

∆E = 1.68 eV

Hf (4f 7/2)BE = 14.18 eV

Hf (4f 5/2)BE = 15.86 eV

Page 181: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Hafnium Metal (Z=72) Hf0

[CAS# 7440-58-6]E

lect

ron

Cou

nts

Binding Energy (eV)

3400

10 -57 4 1 -2

Valence Bands[Xe] 4f145d26s2

I.E. = 642 kJ/mol

BE = 0.95 eV

BE = 6.0 eV

Page 182: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Mercury Metal (Z=80) Hg0

[CAS# 7439-97-6]

Detailed Surface Composition Table

Description: MERCURY (Hg) BEAD [Hydragyrum = Hg]Date: Fri Dec 12 1987

Corrected Exper. Sens Norm Relative Signal BE BE Factor Area Area Hg4s 803.5 803.5 1.73 2111 1218 Hg4p1 680.1 680.1 1.98 1452 735 Hg4p3 577.1 577.1 5.71 8483 1485 O 1s 533.0 533.0 2.80 1798 642 Hg4d3 377.8 377.8 8.20 13162 1606 Hg4d5 358.3 358.3 12.02 18083 1505 C 1s 284.1 284.1 1.00 8236 8235 Hg4f 98.8 98.8 19.44 37127 1910 Hg5p1 81.4 81.4 0.50 374 749 Hg5p3 63.7 63.7 1.21 1522 1258 Hg5d 6.2 6.2 2.17 4730 2182

Page 183: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Mercury Metal (Z=80) Hg0

[CAS# 7439-97-6]E

lect

ron

Cou

nts

Binding Energy (eV)

32000

1000 0800 600 400 200

Hg(

4p1)

Hg(

4p3)

O(1

s)

Hg(

4d3)

Hg(

4d5)

C(1

s)

Hg(

4f)

Hg(

5p1)

Hg(

5p3)

Hg(

5d)

Hg(

4s)

Wide Scan Survey Spectrum

Page 184: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Mercury Metal (Z=80) Hg0

[CAS# 7439-97-6]E

l e c t r o n C

o u n t s

Binding Energy (eV)

1700

112 92108 104 100 96

Baseline: 108.78 to 96.78 eV# 1: 99.87 eV 0.72 eV 15499.68 cts 44.34%# 2: 100.40 eV 1.80 eV 4424.33 cts 12.66%# 3: 103.93 eV 0.72 eV 11708.32 cts 33.49%# 4: 104.47 eV 1.90 eV 3326.48 cts 9.52%3 iterations, chi square = 2.0310

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.55 eVG:L Ratio: 70:30

∆E = 4.06 eV

Hg (4f 7/2)BE = 99.87 eV

Hg (4f 5/2)BE = 103.93 eV

Page 185: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Mercury Metal (Z=80) Hg0

[CAS# 7439-97-6]E

lect

ron

Cou

nts

Binding Energy (eV)

11000

15 -511 7 3 -1

Valence Bands[Xe] 4f145d106s2

I.E. = 1007 kJ/mol

Hg (5d 5/2)Hg (5d 3/2)

Page 186: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Holmium Metal (Z=67) Ho0

[CAS# 7440-60-0]

Detailed Surface Composition Table

Description: Holmium (Ho)Date: Tue Mar 22 1994

Corrected Exper. Sens Norm Relative Signal BE BE Factor Area Area Ho 3d3 1393.3 1393.3 0.00 26257 0 Ho 3d5 1352.9 1352.9 0.00 12222 0 Ho auger 748.0 748.0 0.00 5954 0 Ho auger 665.3 665.3 0.00 6507 0 Ho auger 626.1 626.1 0.00 11037 0 O 1s 531.0 531.0 2.80 1309 468 Ho auger 488.8 488.8 0.00 102648 0 Ho4p3 315.2 315.2 4.22 15354 3640 Ho4d 161.4 161.4 12.24 7085 579 Ho5s 49.5 49.5 0.30 706 2325 Ho5p1 29.5 29.5 0.87 639 735 Ho5p3 23.3 23.3 0.87 2813 3235 Ho4f 8.3 8.3 3.23 10825 3350

Page 187: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Holmium Metal (Z=67) Ho0

[CAS# 7440-60-0]E

lect

ron

Cou

nts

Binding Energy (eV)

22000

1300 01040 780 520 260O

(1s)

Ho(

4p3)

Ho(

4d)

Ho(

5s)

Ho

(5p1

)

Ho

(5p3

) Ho(

4f)

Ho

auge

r

Ho

auge

r

Ho

auge

r

Ho

auge

r

H(1

s)

Wide Scan Survey Spectrum

Page 188: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Holmium Metal (Z=67) Ho0

[CAS# 7440-60-0]E

l e c t r o n C

o u n t s

Binding Energy (eV)

42000

13000

190 150182 174 166 158

Baseline: 171.20 to 156.10 eV# 1: 159.59 eV 0.98 eV 169906.67 cts 23.54%# 2: 160.67 eV 1.20 eV 94797.16 cts 13.14%# 3: 161.83 eV 1.19 eV 195043.94 cts 27.03%# 4: 163.00 eV 1.30 eV 89382.27 cts 12.39%# 5: 164.38 eV 1.34 eV 60610.00 cts 8.40%# 6: 165.58 eV 1.19 eV 47167.30 cts 6.54%# 7: 166.70 eV 1.23 eV 25081.65 cts 3.48%# 8: 168.16 eV 1.53 eV 39701.56 cts 5.50%42 iterations, chi square = 4.9814

Cu (2p3) at 932.67 eVAu (4f7) 83.98 eV

Ag FWHM: 0.49 eVG:L Ratio: 80:20

∆E = 2.24 eV

Ho (4d 5/2)BE = 159.59 eV

Ho (4d 3/2)BE = 161.83 eV

Page 189: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Holmium Metal (Z=67) Ho0

[CAS# 7440-60-0]E

lect

ron

Cou

nts

Binding Energy (eV)

7000

20 016 12 8 4

Valence Bands[Xe] 4f116s2

I.E. = 581 kJ/mol

BE = 5.8 eV

Ho (4f)BE = 8.3 eV

eV

Page 190: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Iodine (Z=53) in Potassium Iodide (FW=166.01) I : KI[CAS# 7681-11-0]

Detailed Surface Composition Table

Description: Potassium Iodide (KI) FRESHLY CLEAVED IN AIRDate: Sat Oct 12 1985

Corrected Exper. Sens Norm Relative Signal BE BE Factor Area Area Atom % I Auger 981.8 979.3 0.00 30857 0 I Auger 970.4 967.9 0.00 11778 0 I 3p1 930.9 928.4 0.06 19330 341697 I loss 888.9 886.4 4.62 4838 1048 I 3p3 875.0 872.5 0.06 35865 565417 I loss 643.5 641.0 9.03 27662 3063 * I 3d3 630.6 628.1 9.19 137068 14911 27.52 * I 3d5 619.0 616.5 13.49 162936 12081 22.30 O 1s 531.0 528.5 2.23 11986 5371 * K 2s 377.2 374.7 2.07 22465 10876 20.07 K loss 303.9 301.4 0.00 10146 0 * K 2p 292.2 289.7 3.95 62592 15848 29.25 * C 1s 285.0 282.5 1.00 461 460 0.85 I 4s 185.5 183.0 1.06 7079 6697 I 4p 121.1 118.6 3.90 11722 3005 I loss 61.7 59.2 2.82 14100 5008 I 4d 48.5 46.0 5.13 62891 12254 K 3s 31.9 29.4 0.36 5408 15008 I+K 15.9 13.4 0.00 9317 0

Page 191: Vol 1 - XPS of Elements & Native Oxides - 1999

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Iodine (Z=53) in Potassium Iodide (FW=166.01) I : KI[CAS# 7681-11-0]

Ele

ctro

n C

ount

s

Binding Energy (eV)

65000

1000 0800 600 400 200

I(A

uger

)I(

Aug

er)

I(3p

1)

I los

s I(3p

3)

I los

s

I los

s

I(3d

3)I(

3d5)

O(1

s) K(2

s)

K lo

ss

K

(2p)

I(4s

)

I(4p

)

I los

s

I(4d

)K

(3s)

I+K

C(1

s)

Page 192: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Iodine (Z=53) in Potassium Iodide (FW=166.01) I : KI[CAS# 7681-11-0]

Ele

ctro

n C

ount

s

Binding Energy (eV)

22000

628 608624 620 616 612

Baseline: 620.91 to 611.78 eV# 1: 616.91 eV 1.31 eV 188378.59 cts 97.17%# 2: 615.40 eV 1.30 eV 5486.17 cts 2.83%5 iterations, chi square = 1.5574

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.70 eVG:L Ratio: 70:30

Charge Shift = 2.12 eV

I (3d 5/2)BE = 619.1 eV

Page 193: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Iodine (Z=53) in Potassium Iodide (FW=166.01) I : KI[CAS# 7681-11-0]

E

l e c t r o n C

o u n t s

Binding Energy (eV)

700

40 -1030 20 10 0

Baseline: 34.71 to -2.75 eV# 1: 0.99 eV 1.37 eV 2421.09 cts 17.01%# 2: 2.14 eV 1.20 eV 1094.74 cts 7.69%# 3: 10.29 eV 2.13 eV 1240.66 cts 8.72%# 4: 13.22 eV 1.63 eV 702.40 cts 4.93%# 5: 15.04 eV 1.31 eV 4577.99 cts 32.16%# 6: 23.17 eV 2.68 eV 535.31 cts 3.76%# 7: 26.49 eV 3.74 eV 989.08 cts 6.95%# 8: 31.11 eV 1.53 eV 2673.19 cts 18.78%3 iterations, chi square = 1.2143

Valence Bands[Kr] 4d105s25p5

I.E. (I) = 1008 kJ/molCharge Shift = 2.12 eV

I (5p)BE = 3.1 eV

I (5s)BE = 12.4 eV

K (3p)BE = 17.2 eV

K (3s)BE = 33.2 eV

Page 194: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Iodine (Z=53) in Potassium Iodide (FW=166.01) I : KI[CAS# 7681-11-0]

E

l e c t r o n C

o u n t s

Binding Energy (eV)

1000

296 276292 288 284 280

Baseline: 287.97 to 279.31 eV# 1: 282.88 eV 1.49 eV 9027.94 cts 87.12%# 2: 284.50 eV 1.50 eV 325.19 cts 3.14%# 3: 286.20 eV 1.26 eV 1009.82 cts 9.74%3 iterations, chi square = 2.0698

C (1s)BE (HC) = 285.0 eV

Charge Shift = 2.12 eV

C-C, C-RBE = 285.0 eV

CO3

BE = 288.3 eV

Page 195: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Iodine (Z=53) in Potassium Iodide (FW=166.01) I : KI[CAS# 7681-11-0]

Ele

ctro

n C

ount

s

Binding Energy (eV)

4500

296 276292 288 284 280

Baseline: 295.69 to 287.81 eV# 1: 290.82 eV 1.26 eV 37632.09 cts 67.31%# 2: 293.61 eV 1.23 eV 18274.48 cts 32.69%6 iterations, chi square = 1.2582

K (2p)∆E = 2.8 eV

Charge Shift = 2.12 eV

K (2p 3/2)BE = 292.9 eV

K (2p 1/2)BE = 295.7 eV

Page 196: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Indium Metal (Z=49) In0

[CAS# 7440-74-6]

Detailed Surface Composition Table

Description: Indium (In) 90 deg TOASum of 15 repetitive etch/scans

Date: Sat Feb 26 1994

Corrected Exper. Sens Norm Relative Signal BE BE Factor Area Area In Auger 1151.4 1151.4 0.00 28420 0 In Auger 1084.0 1084.0 0.00 19510 0 In Auger 1076.4 1076.4 0.00 7187 0 In3s 827.0 827.0 2.80 4722 1686 In loss 714.1 714.1 0.00 4949 0 In3p1 703.1 703.1 4.04 21370 5291 In Loss 676.7 676.7 0.00 10032 0 In3p3 665.2 665.2 8.28 44729 5405 In loss 474.7 474.7 0.00 2930 0 In loss 463.1 463.1 0.00 22692 0 In3d3 451.3 451.3 8.95 109980 12290 In3d5 443.7 443.7 12.95 115892 8949 In4s 122.4 122.4 0.76 3685 4842 In4p 78.3 78.3 2.53 3048 1205 In loss 40.0 40.0 0.00 2197 0 In loss 28.6 28.6 0.00 7957 0 In4d 16.9 16.9 2.37 24803 10450

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Indium Metal (Z=49) In0

[CAS# 7440-74-6]E

lect

ron

Cou

nts

Binding Energy (eV)

210000

1400 01120 840 560 280

In(A

uger

)In

(Aug

er)

In(3

s)

In lo

ss

In(3

p1)

In L

oss

In(3

p3)

In lo

ss In

loss

In

(3d3

)In

(3d5

)

In(4

s)

In(4

p)

In lo

ss

In lo

ss In

(4d)

In(A

uger

)

Wide Scan Survey Spectrum

Page 198: Vol 1 - XPS of Elements & Native Oxides - 1999

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Indium Metal (Z=49) In0

[CAS# 7440-74-6]E

l e c t r o n C

o u n t s

Binding Energy (eV)

26000

470 440464 458 452 446

Baseline: 467.20 to 440.70 eV# 1: 443.81 eV 0.54 eV 314034.97 cts 39.13%# 2: 444.34 eV 0.92 eV 49880.15 cts 6.22%# 3: 445.39 eV 1.33 eV 21934.57 cts 2.73%# 4: 451.37 eV 0.55 eV 218790.31 cts 27.26%# 5: 452.07 eV 1.09 eV 43824.58 cts 5.46%# 6: 453.23 eV 1.49 eV 23137.94 cts 2.88%# 7: 455.37 eV 1.32 eV 57847.90 cts 7.21%# 8: 456.52 eV 1.44 eV 20017.55 cts 2.49%# 9: 462.94 eV 1.27 eV 35517.11 cts 4.43%#10: 463.99 eV 1.57 eV 17540.17 cts 2.19%8 iterations, chi square = 3.5955

Cu (2p3) at 932.67 eVAu (4f7) 83.98 eV

Ag FWHM: 0.49 eVG:L Ratio: 70:30

∆E = 7.56 eV

In (3d 5/2)BE = 443.81 eV

In (3d 3/2)BE = 451.37 eV

Page 199: Vol 1 - XPS of Elements & Native Oxides - 1999

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Indium Metal (Z=49) In0

[CAS# 7440-74-6]E

l e c t r o n C

o u n t s

Binding Energy (eV)

95000

40 -1030 20 10 0

Baseline: 34.90 to 12.30 eV# 1: 16.87 eV 0.65 eV 621526.13 cts 33.43%# 2: 17.75 eV 0.66 eV 455087.00 cts 24.48%# 3: 18.19 eV 2.58 eV 314551.91 cts 16.92%# 4: 25.92 eV 1.89 eV 70326.88 cts 3.78%# 5: 28.22 eV 2.02 eV 108493.38 cts 5.84%# 6: 29.08 eV 1.80 eV 176074.06 cts 9.47%# 7: 30.39 eV 2.67 eV 113144.04 cts 6.09%3 iterations, chi square = 6.8558

Valence Bands[Kr] 4d105s25p1

I.E. = 558 kJ/mol∆E = 0.88 eV

In (4d 3/2)BE = 17.75 eV

In (4d 5/2)BE = 16.87 eV

Page 200: Vol 1 - XPS of Elements & Native Oxides - 1999

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Iridium Metal (Z=77) Ir0

[CAS# 7439-88-5]

Detailed Surface Composition Table

Description: Iridium (Ir) (filed & ion etched 5 minutes)Date: Thu Mar 3 1994

Corrected Exper. Sens Norm Relative Signal BE BE Factor Area Area Ir4s 690.9 690.9 1.73 8325 4809 Ir4p1 578.2 578.2 2.02 11647 5756 O 1s 531.9 531.9 2.80 2402 858 Ir4p3 494.8 494.8 5.38 43137 8019 Ir4d3 311.9 311.9 7.48 47784 6392 Ir4d5 296.2 296.2 10.88 67929 6242 Ar2p 241.1 241.1 3.06 1428 466 Ir loss 95.2 95.2 0.00 22035 0 Ir5p3 47.8 47.8 1.00 6716 6700 Ir4f 60.9 60.9 16.91 153464 9073 ? 31.5 31.5 0.00 1366 0 Ir5d 4.2 4.2 1.58 13779 8745

Page 201: Vol 1 - XPS of Elements & Native Oxides - 1999

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Iridium Metal (Z=77) Ir0

[CAS# 7439-88-5]E

lect

ron

Cou

nts

Binding Energy (eV)

190000

1400 01120 840 560 280

Ir(4

s) Ir(4

p1)

O(1

s)

Ir(4

p3)

Ir(4

d3) Ir(4

d5)

Ar(

2p)

Ir lo

ss

Ir(5

p3)

Ir(4

f)?

Ir

(5d)

Ir (

Aug

er)

Ir (

Aug

er)

Ir (

Aug

er)

Wide Scan Survey Spectrum

Page 202: Vol 1 - XPS of Elements & Native Oxides - 1999

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Iridium Metal (Z=77) Ir0

[CAS# 7439-88-5]E

l e c t r o n C

o u n t s

Binding Energy (eV)

10000

72 5268 64 60 56

Baseline: 68.10 to 57.30 eV# 1: 60.76 eV 0.72 eV 155911.52 cts 46.18%# 2: 61.58 eV 0.73 eV 18451.86 cts 5.47%# 3: 62.32 eV 0.70 eV 10904.98 cts 3.23%# 4: 63.10 eV 0.58 eV 10872.25 cts 3.22%# 5: 63.77 eV 0.71 eV 110266.51 cts 32.66%# 6: 64.51 eV 0.72 eV 17753.01 cts 5.26%# 7: 65.21 eV 0.70 eV 7092.76 cts 2.10%# 8: 66.09 eV 1.17 eV 6379.09 cts 1.89%8 iterations, chi square = 2.3019

Cu (2p3) at 932.67 eVAu (4f7) 83.98 eV

Ag FWHM: 0.49 eVG:L Ratio: 70:30

∆E = 3.01 eV

Ir (4f 7/2)BE = 60.76 eV

Ir (4f 5/2)BE = 63.77 eV

Page 203: Vol 1 - XPS of Elements & Native Oxides - 1999

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Iridium Metal (Z=77) Ir0

[CAS# 7439-88-5]E

lect

ron

Cou

nts

Binding Energy (eV)

11000

15 -511 7 3 -1

Valence Bands[Xe] 4f145d76s2

I.E. = 880 kJ/mol

BE = 6.3 eV

BE = 3.95 eVBE = 1.25 eV

BE = 0.55 eV

Page 204: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Potassium (Z=19) in Potassium Bromide (FW=119.01 ) K : KBr[CAS# 7758-02-3]

Detailed Surface Composition Table

Description: POTASSIUM BROMIDE (KBr) CRYSTAL [ Kalium = K ]Date: Mon Dec 15 1986

Corrected Exper. Sens Norm Relative Signal BE BE Factor Area Area Atom % K loss 389.8 386.3 0.00 10051 0 * K 2s 377.2 373.7 2.07 100049 48382 48.34 K loss 321.2 317.7 0.00 40521 0 K loss 305.5 302.0 0.00 39599 0 K 2p 292.2 288.7 3.95 242072 61227 Br loss 268.7 265.2 0.00 9204 0 Br3s 255.0 251.5 1.58 72740 46016 Br loss 209.9 206.4 0.00 17984 0 Br3p1 187.8 184.3 1.89 35873 18945 Br3p3 181.2 177.7 3.67 140025 38194 S 2p 162.2 158.7 1.89 4014 2124 Br loss 96.3 92.8 0.00 16072 0 Br loss 82.4 78.9 0.00 39435 0 * Br3d 67.9 64.4 3.48 169762 48779 48.74 Br loss 45.0 41.5 0.00 12360 0 Br4s 32.0 28.5 0.23 24934 106317 K 3p 16.0 12.5 0.46 45428 98510 * C 1s 285.0 281.5 1.00 2936 2927 2.92

Page 205: Vol 1 - XPS of Elements & Native Oxides - 1999

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Potassium (Z=19) in Potassium Bromide (FW=119.01 ) K : KBr[CAS# 7758-02-3]

Ele

ctro

n C

ount

s

Binding Energy (eV)

50000

1000 0800 600 400 200K

loss

K(2

s)

K lo

ss

K

loss

K(2

p)

Br

loss

B

r(3s

)

Br

loss

Br(

3p1)

Br(

3p3)

S(2

p)

Br

loss

B

r lo

ss

Br(

3d)

Br

loss

B

r(4s

)K

(3p)C

(1s)

Wide Scan Survey SpectrumCharge Neutralizer ON

Page 206: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Potassium (Z=19) in Potassium Bromide (FW=119.01 ) K : KBr[CAS# 7758-02-3]

Ele

ctro

n C

ount

s

Binding Energy (eV)

50000

292 272288 284 280 276

Baseline: 291.21 to 278.77 eV# 1: 281.42 eV 1.40 eV 9959.45 cts 2.71%# 2: 289.66 eV 1.10 eV 357677.69 cts 97.29%13 iterations, chi square = 5.7855

K (2p 3/2)Charge Shift = 3.54 eV

K (ionic KBr)BE = 293.2 eV

Page 207: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Potassium (Z=19) in Potassium Bromide (FW=119.01 ) K : KBr[CAS# 7758-02-3]

E

l e c t r o n C

o u n t s

Binding Energy (eV)

15000

40 -1030 20 10 0

Baseline: 34.12 to -2.55 eV# 1: 1.01 eV 1.48 eV 81520.06 cts 28.78%# 2: 9.96 eV 2.97 eV 5102.94 cts 1.80%# 3: 11.65 eV 1.15 eV 22086.21 cts 7.80%# 4: 13.82 eV 1.18 eV 88194.09 cts 31.14%# 5: 15.46 eV 2.03 eV 11877.33 cts 4.19%# 6: 23.09 eV 2.68 eV 9435.87 cts 3.33%# 7: 25.44 eV 2.15 eV 5867.64 cts 2.07%# 8: 27.40 eV 2.42 eV 11875.24 cts 4.19%# 9: 29.96 eV 1.31 eV 47287.28 cts 16.69%5 iterations, chi square = 2.7711

Valence Bands[Ar] 4s1

I.E. (K) = 419 kJ/molCharge Shift = 3.54 eV

Br (4p)BE = 4.5 eV

Br (4s)BE = 13.5 eV

K (3p)BE = 17.4 eV

K (3s)BE = 33.5 eV

Page 208: Vol 1 - XPS of Elements & Native Oxides - 1999

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Potassium (Z=19) in Potassium Bromide (FW=119.01 ) K : KBr[CAS# 7758-02-3]

E

l e c t r o n C

o u n t s

Binding Energy (eV)

2000

288 273285 282 279 276

Baseline: 284.91 to 277.83 eV# 1: 281.46 eV 1.58 eV 11579.27 cts 100.00%17 iterations, chi square = 4.8036

C (1s)BE (HC) = 285.0 eV

Charge Shift = 3.54 eV

C-C, C-RBE = 285.0 eV

Page 209: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Potassium (Z=19) in Potassium Bromide (FW=119.01 ) K : KBr[CAS# 7758-02-3]

Ele

ctro

n C

ount

s

Binding Energy (eV)

1400

76 5672 68 64 60

Baseline: 70.43 to 61.65 eV# 1: 65.00 eV 0.96 eV 16102.54 cts 60.21%# 2: 66.05 eV 0.94 eV 10642.96 cts 39.79%3 iterations, chi square = 1.5323

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.70 eVG:L Ratio: 80:20

∆E = 1.05 eVCharge Shift = 3.54 eV

Br (3d 5/2)BE = 68.5 eV

Br (3d 3/2)BE = 69.6 eV

Page 210: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Krypton (Z=36) Implanted Ions Kr0 in C

Detailed Surface Composition Table

Description: Krypton (Kr) ions implanted in graphite, Argon etchedDate: Thu Mar 10 1994

Corrected Exper. Sens Norm Relative Signal BE BE Factor Area Area Ar2p 242.0 242.0 3.17 20320 6411 Kr3p1 233.0 233.0 1.99 1114 560 Kr3p3 208.0 208.0 3.93 3960 1007 Kr3d 87.2 87.2 4.18 2304 552 Ar3s 21.9 21.9 0.29 2454 8528 Ar3p 8.5 8.5 0.31 1735 5594

Page 211: Vol 1 - XPS of Elements & Native Oxides - 1999

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Krypton (Z=36) Implanted Ions Kr0 in CE

lect

ron

Cou

nts

Binding Energy (eV)

5000

240 0192 144 96 48

Kr

loss

Kr(

3d)

Ar(

3s)

Ar(

3p)

Kr(

3p3)

Kr(

3p1) Wide Scan Survey Spectrum

Page 212: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Krypton (Z=36) Implanted Ions Kr0 in CE

lect

ron

Cou

nts

Binding Energy (eV)

1800

105 7599 93 87 81

Baseline: 91.40 to 82.90 eV# 1: 86.93 eV 0.89 eV 30496.30 cts 55.99%# 2: 88.18 eV 0.94 eV 23967.48 cts 44.01%5 iterations, chi square = 1.9739

Cu (2p3) at 932.67 eVAu (4f7) 83.98 eV

Ag FWHM: 0.49 eVG:L Ratio: 90:10

∆E = 1.25 eV

Kr (3d 5/2)BE = 86.93 eV

Kr (3d 3/2)BE = 88.18 eV

Page 213: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Lanthanum (Z=57) Oxide (FW=325.82) La2O3(pellet)

Detailed Surface Composition Table

Description: LANTHANUM OXIDE (La2O3) POWDER on DST, 35 DEG TOADate: JUN 26 1987

Corrected Exper. Sens Norm Relative Signal BE BE Factor Area Area O Auger 976.3 971.5 0.00 3951 0 La loss 882.7 877.8 0.00 1266 0 La loss 866.1 861.2 2.88 6215 2160 La3d3 852.7 847.8 9.13 22382 2451 La3d5 835.9 831.0 13.59 31362 2309 La Auger 794.0 789.2 0.00 467 0 La Auger 777.2 772.3 0.00 1630 0 La Auger 761.5 756.6 0.00 1660 0 La Auger 745.7 740.8 0.00 337 0 O loss 558.8 553.9 0.00 2060 0 O 1s 531.6 526.7 2.23 17537 7850 C 1s 285.0 280.1 1.00 6350 6322 La4s 274.5 269.6 1.21 1582 1310 La loss 230.0 225.1 0.00 1848 0 La loss 210.4 205.5 0.00 1907 0 La4p 195.6 190.7 3.18 5924 1860 La loss 133.7 128.8 0.00 3171 0 La loss 116.6 111.7 0.23 1411 6096 La4d 104.4 99.6 7.74 23925 3090 La5s 34.2 29.3 0.29 550 1865 La5p 17.0 12.1 0.88 2946 3351

Page 214: Vol 1 - XPS of Elements & Native Oxides - 1999

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Lanthanum (Z=57) Oxide (FW=325.82) La2O3(pellet)

Ele

ctro

n C

ount

s

Binding Energy (eV)

120000

1000 0800 600 400 200

O(A

uger

)

La lo

ss

La lo

ss

La(3

d3)

La(3

d5)

La (

Aug

er)

La (

Aug

er)

La (

Aug

er)

La (

Aug

er)

O lo

ss

O(1

s)

C(1

s)La

(4s)

La lo

ss

La(4

p1) La

(4p3

)

La lo

ss

La lo

ss

La(4

d)

La(5

s)La

(5s)

La(5

p)

Wide Scan Survey SpectrumCharge Neutralizer ON

Page 215: Vol 1 - XPS of Elements & Native Oxides - 1999

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Lanthanum (Z=57) Oxide (FW=325.82) La2O3(pellet)

E

l e c t r o n C

o u n t s

Binding Energy (eV)

40000

870 820860 850 840 830

Baseline: 853.16 to 823.00 eV# 1: 829.31 eV 2.80 eV 771869.38 cts 32.22%# 2: 833.05 eV 2.52 eV 526847.63 cts 21.99%# 3: 840.72 eV 3.04 eV 93272.36 cts 3.89%# 4: 842.81 eV 1.97 eV 62213.02 cts 2.60%# 5: 846.06 eV 3.02 eV 635018.19 cts 26.50%# 6: 849.88 eV 2.27 eV 306693.31 cts 12.80%4 iterations, chi square = 6.6027

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.70 eVG:L Ratio: 80:20

∆E = 16.8 eVCharge Shift = 5.39 eV

La (3d 5/2)BE = 834.7 eV

La (3d 3/2)BE = 851.5 eV

Page 216: Vol 1 - XPS of Elements & Native Oxides - 1999

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Lanthanum (Z=57) Oxide (FW=325.82) La2O3(pellet)

E

l e c t r o n C

o u n t s

Binding Energy (eV)

5600

40 -1030 20 10 0

Baseline: 24.86 to -5.69 eV# 1: -1.08 eV 1.79 eV 14061.93 cts 7.36%# 2: 0.29 eV 1.61 eV 13311.42 cts 6.97%# 3: 4.05 eV 1.89 eV 9000.42 cts 4.71%# 4: 6.76 eV 4.06 eV 3956.44 cts 2.07%# 5: 10.75 eV 1.83 eV 17395.11 cts 9.10%# 6: 12.11 eV 1.82 eV 63734.70 cts 33.36%# 7: 14.18 eV 2.14 eV 41171.43 cts 21.55%# 8: 18.41 eV 3.40 eV 28420.78 cts 14.88%3 iterations, chi square = 1.8456

Valence Bands[Xe] 5d16s2

I.E. (La) = 538 kJ/molCharge Shift = 5.39 eV

La (4f)

Page 217: Vol 1 - XPS of Elements & Native Oxides - 1999

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Lanthanum (Z=57) Oxide (FW=325.82) La2O3(pellet)

E

l e c t r o n C

o u n t s

Binding Energy (eV)

2500

292 272288 284 280 276

Baseline: 287.06 to 276.47 eV# 1: 279.61 eV 1.86 eV 53992.71 cts 71.34%# 2: 281.19 eV 1.58 eV 3022.15 cts 3.99%# 3: 283.38 eV 1.60 eV 5372.52 cts 7.10%# 4: 284.53 eV 1.57 eV 13300.02 cts 17.57%20 iterations, chi square = 1.9759

C (1s)BE (HC) = 285.0 eV

Charge Shift = 5.39 eVC-C, C-RBE = 285.0 eV

CO3

BE = 289.9 eV

Page 218: Vol 1 - XPS of Elements & Native Oxides - 1999

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Lanthanum (Z=57) Oxide (FW=325.82) La2O3(pellet)

E

l e c t r o n C

o u n t s

Binding Energy (eV)

16000

538 518534 530 526 522

Baseline: 530.39 to 520.67 eV# 1: 523.93 eV 1.84 eV 100852.63 cts 20.19%# 2: 525.71 eV 1.57 eV 311809.66 cts 62.43%# 3: 526.89 eV 1.44 eV 86794.85 cts 17.38%3 iterations, chi square = 1.9220

O (1s)Charge Shift = 5.39 eV

CO3

BE = 532.3 eV

La oxideBE = 529.3 eV

Page 219: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Lithium (Z=3) in Lithium Hydroxide Monohydrate (FW=41.96) Li : LiOH[CAS# 1310-66-3]

Detailed Surface Composition Table

Description: LITHIUM HYDROXIDE (LiOH-xH2O) (on double sided tape, 1 mm from screen)Date: Wed Jun 15 1988

Corrected Exper. Sens Norm Relative Signal BE BE Factor Area Area Atom % O Auger 979.5 973.3 0.00 42659 0 O loss 553.0 546.8 0.00 39458 0 * O 1s 531.7 525.5 2.24 153370 68463 45.32 C loss 301.8 295.6 0.00 1026 0 * C 1s 285.0 278.8 1.01 26559 26405 17.48 * Li1s 54.3 48.1 0.07 3975 56211 37.21 O 2s 23.1 16.9 0.18 7741 43438

Page 220: Vol 1 - XPS of Elements & Native Oxides - 1999

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Lithium (Z=3) in Lithium Hydroxide Monohydrate (FW=41.96) Li : LiOH[CAS# 1310-66-3]

Ele

ctro

n C

ount

s

Binding Energy (eV)

60000

1000 0800 600 400 200

O(A

uger

)

O lo

ss

O

(1s)

C lo

ss

C

(1s)

Li(1

s)

O(2

s)

Wide Scan Survey SpectrumCharge Neutralizer ON

Page 221: Vol 1 - XPS of Elements & Native Oxides - 1999

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Lithium (Z=3) in Lithium Hydroxide Monohydrate (FW=41.96) Li : LiOH[CAS# 1310-66-3]

Ele

ctro

n C

ount

s

Binding Energy (eV)

850

56 4253.2 50.4 47.6 44.8

Baseline: 52.60 to 46.61 eV# 1: 49.45 eV 1.66 eV 25352.20 cts 100.00%11 iterations, chi square = 1.3617

Li (1s)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.70 eVG:L Ratio: 80:20

Charge Shift = 5.43 eVLi (mainly as Li2CO3)BE = 54.8 eV

Page 222: Vol 1 - XPS of Elements & Native Oxides - 1999

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Lithium (Z=3) in Lithium Hydroxide Monohydrate (FW=41.96) Li : LiOH[CAS# 1310-66-3]

Ele

ctro

n C

ount

s

Binding Energy (eV)

1700

292 272288 284 280 276

Baseline: 288.00 to 275.53 eV# 1: 279.57 eV 1.56 eV 33017.48 cts 55.27%# 2: 281.16 eV 1.60 eV 2377.17 cts 3.98%# 3: 283.42 eV 1.47 eV 4747.53 cts 7.95%# 4: 284.63 eV 1.39 eV 19592.34 cts 32.80%4 iterations, chi square = 1.1601

C (1s)BE (HC) = 285.0 eV

Charge Shift = 5.43 eV

C-C, C-RBE = 285.0 eV

CO3

BE = 290.0 eV

Page 223: Vol 1 - XPS of Elements & Native Oxides - 1999

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Lithium (Z=3) in Lithium Hydroxide Monohydrate (FW=41.96) Li : LiOH[CAS# 1310-66-3]

Ele

ctro

n C

ount

s

Binding Energy (eV)

15000

536 516532 528 524 520

Baseline: 530.75 to 521.80 eV# 1: 525.80 eV 1.60 eV 300131.50 cts 82.87%# 2: 526.85 eV 1.32 eV 62034.04 cts 17.13%6 iterations, chi square = 1.7897

O (1s)Charge Shift = 5.43 eV

CO3

BE = 531.2 eV

OH (hydroxide) ?BE = 532.3 eV

Page 224: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Lutetium Metal (Z=71) Lu0

[CAS# 7439-94-3]

Detailed Surface Composition Table

Description: Lutetium (Lu)Date: Tue Mar 15 1994

Corrected Exper. Sens Norm Relative Signal BE BE Factor Area Area Lu Auger 1321.6 1321.6 0.00 19739 0 O Auger 976.1 976.1 0.00 1707 0 O 1s 530.9 530.9 2.80 3820 1364 Lu4s 507.9 507.9 1.66 6795 4093 Lu4p1 412.7 412.7 1.98 8707 4387 Lu4p3 359.2 359.2 4.68 24788 5297 Ar2p 243.7 243.7 3.06 1176 384 Lu4d3 205.8 205.8 5.94 32464 5461 Lu4d5 196.0 196.0 8.57 31360 3659 Lu5s 56.8 56.8 0.34 1095 3244 Lu5p1 33.4 33.4 0.00 1815 0 Lu5p3 26.1 26.1 0.00 3396 0 Lu4f 8.3 8.3 6.77 41632 6145

Page 225: Vol 1 - XPS of Elements & Native Oxides - 1999

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Lutetium Metal (Z=71) Lu0

[CAS# 7439-94-3]E

lect

ron

Cou

nts

Binding Energy (eV)

30000

1400 01120 840 560 280

O(A

uger

)

O(1

s)Lu

(4s) Lu

(4p1

)

Lu(4

p3)

Ar(

2p)

Lu(4

d3)

Lu(4

d5)

Lu(5

s)Lu

(5p

1) Lu

(5p

3)

Lu(4

f)

Lu A

uger

Wide Scan Survey Spectrum

Page 226: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Lutetium Metal (Z=71) Lu0

[CAS# 7439-94-3]E

l e c t r o n C

o u n t s

Binding Energy (eV)

20000

25 -519 13 7 1

Baseline: 15.20 to 4.55 eV# 1: 7.07 eV 0.46 eV 166205.66 cts 24.86%# 2: 7.52 eV 0.59 eV 84334.13 cts 12.61%# 3: 8.26 eV 0.70 eV 72533.45 cts 10.85%# 4: 8.57 eV 0.46 eV 124853.50 cts 18.67%# 5: 9.00 eV 0.50 eV 64069.98 cts 9.58%# 6: 9.52 eV 0.68 eV 65831.32 cts 9.85%# 7: 10.24 eV 0.72 eV 36799.97 cts 5.50%# 8: 10.94 eV 0.74 eV 23452.32 cts 3.51%# 9: 11.63 eV 0.76 eV 8327.95 cts 1.25%#10: 12.53 eV 2.37 eV 22238.54 cts 3.33%3 iterations, chi square = 3.9731

Cu (2p3) at 932.67 eVAu (4f7) 83.98 eV

Ag FWHM: 0.49 eVG:L Ratio: 90:10

∆E = 1.50 eV

Lu (4f 7/2)BE = 7.07 eV

Lu (4f 5/2)BE = 8.57 eV

Page 227: Vol 1 - XPS of Elements & Native Oxides - 1999

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Lutetium Metal (Z=71) Lu0

[CAS# 7439-94-3]E

lect

ron

Cou

nts

500

5 -53 1 -1 -3

Valence Bands[Xe] 4f145d16s2

I.E. = 523 kJ/molBE = 0.25 eV

Page 228: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Magnesium Metal (Z=12) Mg0

[CAS# 7439-95-4]

Detailed Surface Composition Table

Description: Magnesium (Mg) Sum of 10 repetitive etch/scans, after 70 min etchDate: Sun Feb 27 1994

Corrected Exper. Sens Norm Relative Signal BE BE Factor Area Area Mg loss 1326.3 1326.3 0.00 729 0 Mg loss 1315.3 1315.3 0.00 3654 0 Mg (1s) 1304.4 1304.4 0.00 8523 0 Mg Auger 391.7 391.7 0.03 1626 62424 Mg Auger 381.0 381.0 0.03 3620 137424 Mg Auger 368.5 368.5 0.03 2303 86303 Mg Auger 357.9 357.9 0.00 6327 0 Mg Auger 347.2 347.2 0.00 12534 0 Mg Auger 333.1 333.1 0.03 6594 238418 Mg Auger 323.6 323.6 0.03 5937 206078 Mg Auger 312.5 312.5 3.99 18668 4678 Mg Auger 301.6 301.6 4.03 41071 10183 Ar loss 253.8 253.8 0.00 517 0 Ar2p 243.8 243.8 3.16 2507 794 Mg Auger 235.3 235.3 0.03 2009 68721 Mg loss 110.6 110.6 0.23 1113 4836

Page 229: Vol 1 - XPS of Elements & Native Oxides - 1999

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Magnesium Metal (Z=12) Mg0

[CAS# 7439-95-4]

Detailed Surface Composition Table (continued)

Description: Magnesium (Mg) Sum of 10 repetitive etch/scans, after 70 min etchDate: Sun Feb 27 1994

Corrected Exper. Sens Norm Relative Signal BE BE Factor Area Area Mg loss 99.8 99.8 12.46 3097 249 Mg2s 89.1 89.1 0.68 5538 8099 Mg loss 71.8 71.8 0.00 707 0 Mg loss 61.0 61.0 2.79 1879 673 Mg2p 50.2 50.2 0.41 3053 7470

Page 230: Vol 1 - XPS of Elements & Native Oxides - 1999

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Magnesium Metal (Z=12) Mg0

[CAS# 7439-95-4]E

lect

ron

Cou

nts

Binding Energy (eV)

50000

1400 01120 840 560 280

Mg

loss

M

g lo

ss M

g (1

s)

Mg(

Aug

er)

Mg(

Aug

er)

Mg(

Aug

er)

Mg(

Aug

er)

Mg(

Aug

er)

Mg(

Aug

er) M

g(A

uger

)M

g(A

uger

)

Ar

loss

A

r(2p

)

Mg

loss

M

g lo

ss

Mg(

2s)

Mg

loss

M

g lo

ss

Mg(

2p)

Mg(

Aug

er)

Mg(

Aug

er)

Wide Scan Survey Spectrum

Page 231: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Magnesium Metal (Z=12) Mg0

[CAS# 7439-95-4]E

l e c t r o n C

o u n t s

Binding Energy (eV)

700

60 4056 52 48 44

Baseline: 52.50 to 47.30 eV# 1: 49.61 eV 0.34 eV 4280.46 cts 53.09%# 2: 49.91 eV 0.38 eV 2153.06 cts 26.71%# 3: 50.31 eV 0.61 eV 975.68 cts 12.10%# 4: 51.03 eV 0.63 eV 446.80 cts 5.54%# 5: 51.70 eV 0.59 eV 206.35 cts 2.56%3 iterations, chi square = 1.4091

Cu (2p3) at 932.67 eVAu (4f7) 83.98 eV

Ag FWHM: 0.49 eVG:L Ratio: 90:10

∆E = 0.30 eV

Mg (2p 3/2)BE = 49.61 eV

Mg (2p 1/2)BE = 49.91 eV

Page 232: Vol 1 - XPS of Elements & Native Oxides - 1999

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Magnesium Metal (Z=12) Mg0

[CAS# 7439-95-4]E

lect

ron

Cou

nts

Binding Energy (eV)

700

40 -1030 20 10 0

Valence Bands[Ne] 3s2

I.E. = 738 kJ/mol

Ar (3p)Ar (3s)

BE = 34 eVBE = 21.5 eV

Page 233: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Manganese Metal (Z=25) Mn0

[CAS# 7439-96-5]

Detailed Surface Composition Table

Description: Manganese (Mn): 0.70 eV/step, 90 deg TOA Sum of 15 repetitive etch/scansDate: Sun Feb 20 1994

Corrected Exper. Sens Norm Relative Signal BE BE Factor Area Area O Auger 976.2 976.2 0.00 1803 0 Mn Auger 944.1 944.1 0.57 2681 4664 Mn Auger 900.3 900.3 0.00 17488 0 Mn Auger 851.6 851.6 0.00 6488 0 Mn2s 768.6 768.6 3.82 5571 1460 Mn2p1 650.1 650.1 4.41 13620 3089 Mn2p3 639.1 639.1 8.55 33903 3964 O 1s 530.4 530.4 2.80 1244 444 Ar2s 320.2 320.2 1.96 264 135 C 1s 283.2 283.2 1.00 378 378 Ar2p 242.4 242.4 3.06 460 150 Mn3s 82.0 82.0 0.70 2386 3431 Mn3p 47.0 47.0 1.48 5459 3700 Mn3d 2.8 2.8 0.11 936 8547

Page 234: Vol 1 - XPS of Elements & Native Oxides - 1999

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Manganese Metal (Z=25) Mn0

[CAS# 7439-96-5]E

lect

ron

Cou

nts

Binding Energy (eV)

31000

1400 01120 840 560 280

O(A

uger

)

Mn(

Aug

er)

Mn(

Aug

er)

Mn(

2s)

Mn(

2p1)

Mn(

2p3)

O(1

s)

Ar(

2s)

C(1

s)

Ar(

2p)

Mn(

3s) M

n(3p

)

Mn(

3d)

Mn(

Aug

er)

Wide Scan Survey Spectrum

Page 235: Vol 1 - XPS of Elements & Native Oxides - 1999

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Manganese Metal (Z=25) Mn0

[CAS# 7439-96-5]E

l e c t r o n C

o u n t s

Binding Energy (eV)

3800

660 630654 648 642 636

Baseline: 656.00 to 635.00 eV# 1: 638.67 eV 0.80 eV 57137.06 cts 35.70%# 2: 639.48 eV 1.07 eV 29822.60 cts 18.63%# 3: 640.42 eV 1.14 eV 13222.24 cts 8.26%# 4: 641.48 eV 1.17 eV 6817.65 cts 4.26%# 5: 642.74 eV 1.28 eV 2969.57 cts 1.86%# 6: 649.81 eV 1.20 eV 28756.01 cts 17.97%# 7: 650.90 eV 1.20 eV 12891.42 cts 8.05%# 8: 652.02 eV 1.17 eV 5152.47 cts 3.22%# 9: 653.19 eV 1.20 eV 3295.05 cts 2.06%3 iterations, chi square = 2.2464

Cu (2p3) at 932.67 eVAu (4f7) 83.98 eV

Ag FWHM: 0.49 eVG:L Ratio: 80:20

∆E = 11.14 eV

Mn (2p 3/2)BE = 638.67 eV

Mn (2p 1/2)BE = 649.81 eV

Page 236: Vol 1 - XPS of Elements & Native Oxides - 1999

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Manganese Metal (Z=25) Mn0

[CAS# 7439-96-5]E

lect

ron

Cou

nts

Binding Energy (eV)

3000

40 -1030 20 10 0

Valence Bands[Ar] 3d54s2

I.E. = 717 kJ/mol

Page 237: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Molybdenum Metal (Z=42) Mo0

[CAS# 7439-98-7]

Detailed Surface Composition Table

Description: Molybdenum (Mo) 90 deg TOA Sum of 15 repetitive etch/scansDate: Thu Feb 17 1994

Corrected Exper. Sens Norm Relative Signal BE BE Factor Area Area Mo auger 1365.5 1365.5 1.48 1471 994 Mo auger 1324.5 1324.5 0.00 1511 0 Mo auger 1298.6 1298.6 0.00 3614 0 Mo auger 1264.2 1264.2 0.00 2474 0 O 1s 530.4 530.4 2.80 1077 385 Mo3s 505.4 505.4 2.25 8741 3890 Mo loss 421.6 421.6 0.00 1335 0 Mo3p1 411.3 411.3 2.97 14538 4890 Mo3p3 393.8 393.8 5.83 34338 5892 Mo loss 253.0 253.0 0.00 9735 0 Mo loss 238.9 238.9 0.00 4146 0 Mo3d 227.8 227.8 9.59 69632 7261 Mo4s 62.0 62.0 0.46 3483 7652 Mo4p 35.2 35.2 1.36 8213 6037 Mo4d 2.1 2.1 0.33 1004 3046

Page 238: Vol 1 - XPS of Elements & Native Oxides - 1999

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Molybdenum Metal (Z=42) Mo0

[CAS# 7439-98-7]E

lect

ron

Cou

nts

Binding Energy (eV)

100000

1400 01120 840 560 280

Mo

auge

r

Mo

auge

r

Mo

auge

r

Mo

auge

r

O(1

s)M

o(3s

)

Mo

loss

Mo(

3p1) M

o(3p

3)

Mo

loss

M

o lo

ss

Mo(

3d)

Mo(

4s)

Mo(

4p)

Mo(

4d)

Wide Scan Survey Spectrum

Page 239: Vol 1 - XPS of Elements & Native Oxides - 1999

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Molybdenum Metal (Z=42) Mo0

[CAS# 7439-98-7]E

l e c t r o n C

o u n t s

Binding Energy (eV)

16000

240 220236 232 228 224

Baseline: 235.55 to 224.60 eV# 1: 227.95 eV 0.48 eV 153091.95 cts 49.19%# 2: 228.50 eV 0.83 eV 20498.78 cts 6.59%# 3: 229.53 eV 1.37 eV 13420.36 cts 4.31%# 4: 231.10 eV 0.70 eV 101517.66 cts 32.62%# 5: 231.82 eV 0.73 eV 13755.56 cts 4.42%# 6: 232.60 eV 1.24 eV 8952.18 cts 2.88%3 iterations, chi square = 3.6700

Cu (2p3) at 932.67 eVAu (4f7) 83.98 eV

Ag FWHM: 0.49 eVG:L Ratio: 80:20

∆E = 3.15 eV

Mo (3d 5/2)BE = 227.95 eV

Mo (3d 3/2)BE = 231.10 eV

Page 240: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Molybdenum Metal (Z=42) Mo0

[CAS# 7439-98-7]E

lect

ron

Cou

nts

Binding Energy (eV)

7000

20 -1014 8 2 -4

Valence Bands[Kr] 4d55s1

I.E. = 685 kJ/mol

Mo (4d, 5s)

BE = 2.88 eV

BE = 4.03 eV

BE = 1.83 eV

BE = 0.77 eV

Page 241: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Nitrogen (N=7) in Boron Nitride (FW=24.82) N : BN[CAS# 10043-11-5]

Detailed Surface Composition Table

Description: Nitrogen in white BORON NITRIDE (BN) (45 deg TOA) 1 mm from screen

Date: Wed Jun 15 1987

Corrected Exper. Sens Norm Relative Signal BE BE Factor Area Area Atom % * O 1s 533.2 528.3 2.23 2749 1231 1.29 N loss 424.5 419.7 0.00 9514 0 * N 1s 398.5 393.6 1.61 62520 38931 40.85 * C 1s 285.0 280.1 1.00 9662 9619 10.09 B loss 215.0 210.1 0.00 6106 0 * B 1s 190.7 185.8 0.53 24320 45515 47.76 N 2s 19.5 14.6 0.18 3919 21952

Page 242: Vol 1 - XPS of Elements & Native Oxides - 1999

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Nitrogen (N=7) in Boron Nitride (FW=24.82) N : BN[CAS# 10043-11-5]

Ele

ctro

n C

ount

s

Binding Energy (eV)

70000

1000 0800 600 400 200

O(1

s)

N lo

ss

N(1

s)

C(1

s)

B lo

ss

B(1

s)

N (

2s)

B lo

ss

Wide Scan Survey SpectrumCharge Neutralizer ON

Page 243: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Nitrogen (N=7) in Boron Nitride (FW=24.82) N : BN[CAS# 10043-11-5]

Ele

ctro

n C

ount

s

Binding Energy (eV)

6000

405 385401 397 393 389

Baseline: 397.86 to 391.35 eV# 1: 394.34 eV 1.13 eV 78853.78 cts 95.68%# 2: 395.44 eV 1.20 eV 3561.41 cts 4.32%3 iterations, chi square = 1.5517

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.70 eVG:L Ratio: 80:20

Charge Shift = 3.95 eV

N (1s)BE = 398.3 eV

Page 244: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Nitrogen (N=7) in Boron Nitride (FW=24.82) N : BN[CAS# 10043-11-5]

E

l e c t r o n C

o u n t s

Binding Energy (eV)

600

40 -1030 20 10 0

Baseline: 23.73 to -2.55 eV# 1: 1.21 eV 3.75 eV 1217.22 cts 8.40%# 2: 5.05 eV 2.98 eV 1762.43 cts 12.16%# 3: 8.49 eV 2.51 eV 1961.57 cts 13.53%# 4: 15.80 eV 2.80 eV 6891.26 cts 47.54%# 5: 18.33 eV 2.74 eV 2662.60 cts 18.37%3 iterations, chi square = 1.8102

Valence Bands[He] 2s22p3

I.E. (N) = 1402 kJ/molCharge Shift = 3.95 eV

N (2s, 2p)BE = 19.8 eV

B (2s) ?BE = 12.4 eV

Page 245: Vol 1 - XPS of Elements & Native Oxides - 1999

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Nitrogen (N=7) in Boron Nitride (FW=24.82) N : BN[CAS# 10043-11-5]

Ele

ctro

n C

ount

s

Binding Energy (eV)

220

292 272288 284 280 276

Baseline: 285.41 to 277.57 eV# 1: 281.05 eV 1.16 eV 2966.19 cts 100.00%4 iterations, chi square = 2.0649

C (1s)BE (HC) = 285.0 eV

Charge Shift = 3.95 eV

C-C, C-RBE = 285.0 eV

Page 246: Vol 1 - XPS of Elements & Native Oxides - 1999

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Nitrogen (N=7) in Boron Nitride (FW=24.82) N : BN[CAS# 10043-11-5]

Ele

ctro

n C

ount

s

Binding Energy (eV)

3000

198 178194 190 186 182

Baseline: 189.76 to 184.27 eV# 1: 186.76 eV 1.13 eV 42000.03 cts 100.00%8 iterations, chi square = 1.6150

B (1s)Charge Shift = 3.95 eVB (in BN)

BE = 190.7 eV

Page 247: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Sodium (Z=11) in Sodium Chloride (FW=58.44) Na : NaCl[CAS# 7647-14-5]

Detailed Surface Composition Table

Description: SODIUM CHLORIDE (NaCl) CRYSTAL (24 HR IN VACUUM)[Natrium = Na]

Date: Mon Dec 12 1986

Corrected Exper. Sens Norm Relative Signal BE BE Factor Area Area Atom % Na Auger 565.0 561.2 0.00 19026 0 Na Auger 552.4 548.7 0.00 8497 0 Na Auger 536.4 532.6 0.00 66995 0 Na Auger 524.0 520.2 0.00 20813 0 Na Auger 513.2 509.4 0.00 18470 0 Na Auger 497.4 493.6 2.70 230153 0 Na Auger 454.3 450.6 0.01 5605 0 Cl2s 285.0 281.2 1.70 54657 32232 Cl2s 269.6 265.8 1.73 110674 64092 S 2s 227.4 223.6 1.52 4191 2762 Cl loss 217.5 213.7 0.00 58139 0 * Cl2p 198.7 194.9 2.49 186849 75008 45.01 * S 2p 163.2 159.4 1.89 8086 4286 2.57 Na loss 79.2 75.4 0.00 15554 0 * Na2s 63.3 59.5 0.52 45625 87368 52.42 Na loss 46.5 42.7 0.00 7168 0 Na2p 30.3 26.5 0.24 23969 99366 Cl3s 15.7 11.9 0.24 8809 37256

Page 248: Vol 1 - XPS of Elements & Native Oxides - 1999

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Sodium (Z=11) in Sodium Chloride (FW=58.44) Na : NaCl[CAS# 7647-14-5]

Ele

ctro

n C

ount

s

Binding Energy (eV)

220000

1000 0800 600 400 200

Na(

Aug

er)

Na(

Aug

er)

Na(

Aug

er)

Na(

Aug

er)

Na(

Aug

er)

Na(

Aug

er)

Cl l

oss

C

l(2s)

S(2

s) Cl l

oss

C

l(2p)

S(2

p)

Na

loss

N

a(2s

)N

a lo

ss Na(

2p)

Cl(3

s)

Na(

Aug

er)

Wide Scan Survey SpectrumCharge Neutralizer ON

Page 249: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Sodium (Z=11) in Sodium Chloride (FW=58.44) Na : NaCl[CAS# 7647-14-5]

Ele

ctro

n C

ount

s

Binding Energy (eV)

24000

1080 10601076 1072 1068 1064

Baseline: 1073.37 to 1065.07 eV# 1: 1068.70 eV 1.39 eV 654438.81 cts 100.00%8 iterations, chi square = 1.9506

Na (1s)BE = 1071.8 eV

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.70 eVG:L Ratio: 70:30

Charge Shift = 3.14 eV

Page 250: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Sodium (Z=11) in Sodium Chloride (FW=58.44) Na : NaCl[CAS# 7647-14-5]

E

l e c t r o n C

o u n t s

Binding Energy (eV)

14000

40 -1030 20 10 0

Baseline: 34.52 to -2.56 eV# 1: 2.37 eV 1.34 eV 60471.52 cts 19.40%# 2: 3.57 eV 1.30 eV 31884.26 cts 10.23%# 3: 13.54 eV 1.60 eV 67245.32 cts 21.58%# 4: 19.57 eV 1.80 eV 21793.36 cts 6.99%# 5: 28.12 eV 1.31 eV 130252.69 cts 41.79%13 iterations, chi square = 6.9252

Valence Bands[Ne] 3s1

I.E. (Na) = 496 kJ/molCharge Shift = 3.14 eV

Cl (3p)BE = 5.5 eV

Na (2p)BE = 31.2 eV

Cl (3s)BE = 16.7 eV

Page 251: Vol 1 - XPS of Elements & Native Oxides - 1999

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Sodium (Z=11) in Sodium Chloride (FW=58.44) Na : NaCl[CAS# 7647-14-5]

Ele

ctro

n C

ount

s

Binding Energy (eV)

10000

292 272288 284 280 276

Baseline: 283.50 to 280.66 eV# 1: 281.86 eV 1.17 eV 22886.02 cts 100.00%5 iterations, chi square = 5.1974

C (1s)BE (HC) = 285.0 eV

Charge Shift = 3.14 eVC-C, C-RBE = 285.0 eV

Page 252: Vol 1 - XPS of Elements & Native Oxides - 1999

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Sodium (Z=11) in Sodium Chloride (FW=58.44) Na : NaCl[CAS# 7647-14-5]

Ele

ctro

n C

ount

s

Binding Energy (eV)

4400

206 186202 198 194 190

Baseline: 200.73 to 192.84 eV# 1: 195.80 eV 1.23 eV 104148.29 cts 66.79%# 2: 197.43 eV 1.18 eV 51796.32 cts 33.21%50 iterations, chi square = 1.1716

Cl (2p 3/2)BE = 198.9 eV

Cl (2p 1/2)BE = 200.6 eV

Cl (2p)Charge Shift = 3.14 eV

Page 253: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Niobium Metal (Z=41) Nb0

[CAS# 7440-03-1]

Detailed Surface Composition Table

Description: Niobium (Nb) 90 deg TOA Sum of 15 repetitive etch/scansDate: Sat Feb 19 1994

Corrected Exper. Sens Norm Relative Signal BE BE Factor Area Area Nb3s 466.8 466.8 2.15 316 147 Nb3p1 376.2 376.2 2.80 1301 466 Nb3p3 360.8 360.8 5.46 2294 420 Nb loss 224.4 224.4 0.00 424 0 Nb3d 202.3 202.3 8.32 4573 550 Nb4s 55.6 55.6 0.42 118 283 Nb4p 30.9 30.9 1.22 634 521

Page 254: Vol 1 - XPS of Elements & Native Oxides - 1999

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Niobium Metal (Z=41) Nb0

[CAS# 7440-03-1]E

lect

ron

Cou

nts

Binding Energy (eV)

3000

1400 01120 840 560 280

Nb(

3s)

Nb(

3p1)

Nb(

3p3)

Nb

loss

N

b(3d

)

Nb(

4s) Nb(

4p)

Wide Scan Survey Spectrum

Page 255: Vol 1 - XPS of Elements & Native Oxides - 1999

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Niobium Metal (Z=41) Nb0

[CAS# 7440-03-1]E

l e c t r o n C

o u n t s

Binding Energy (eV)

16000

215 195211 207 203 199

Baseline: 208.60 to 200.25 eV# 1: 202.26 eV 0.44 eV 133288.25 cts 34.81%# 2: 202.67 eV 0.44 eV 45628.00 cts 11.92%# 3: 203.08 eV 0.66 eV 29180.13 cts 7.62%# 4: 203.93 eV 1.27 eV 21550.18 cts 5.63%# 5: 205.01 eV 0.57 eV 89102.52 cts 23.27%# 6: 205.51 eV 0.54 eV 30117.33 cts 7.87%# 7: 205.96 eV 0.83 eV 19640.05 cts 5.13%# 8: 206.63 eV 1.55 eV 14353.63 cts 3.75%4 iterations, chi square = 3.1581

Cu (2p3) at 932.67 eVAu (4f7) 83.98 eV

Ag FWHM: 0.49 eVG:L Ratio: 70:30

∆E = 2.75 eV

Nb (3d 5/2)BE = 202.26 eV

Nb (3d 3/2)BE = 205.01 eV

Page 256: Vol 1 - XPS of Elements & Native Oxides - 1999

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Niobium Metal (Z=41) Nb0

[CAS# 7440-03-1]E

lect

ron

Cou

nts

Binding Energy (eV)

6000

20 -1014 8 2 -4

Valence Bands[Kr] 4d45s1

I.E. = 664 kJ/molNb (4d)

Nb (5s) ?

BE = 2.50 eV

BE = 1.00 eV

BE = 10.3 eV

Page 257: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Neodymium metal (Z=60) Nd0

[CAS# 7440-00-8]

Detailed Surface Composition Table

Description: NEODYMIUM (Nd) CHIP (90 DEG TOA, FILED, ION ETCHED)Date: Jun 24 1988

Corrected Exper. Sens Norm Relative Signal BE BE Factor Area Area Nd3d5 982.1 982.8 12.43 155523 12512 Nd Auger 758.6 759.3 0.00 45304 0 Nd Auger 649.8 650.4 0.00 9270 0 Nd Auger 635.9 636.6 0.00 5682 0 O loss 546.4 547.1 0.00 6049 0 O 1s 529.7 530.4 2.23 23195 10410 Nd Auger 515.3 516.0 0.00 2635 0 Nd4s 320.5 321.2 1.28 16419 12812 C 1s 285.0 285.7 1.00 34281 34318 Nd4p1 243.8 244.5 1.65 8824 5336 Nd4p3 227.2 227.9 3.50 34259 9793 Nd loss 151.1 151.7 0.00 9463 0 Nd4d 119.8 120.5 9.36 121478 12973 Nd loss 38.2 38.9 0.00 3529 0 Nd5p 17.5 18.2 0.90 16739 18594

Page 258: Vol 1 - XPS of Elements & Native Oxides - 1999

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Neodymium metal (Z=60) Nd0

[CAS# 7440-00-8]E

lect

ron

Cou

nts

Binding Energy (eV)

100000

1000 0800 600 400 200

Nd(

3d5

Nd(

Aug

er)

Nd(

Aug

er)

Nd(

Aug

er)

Nd(

Aug

er)

Nd(

Aug

er)

Nd(

Aug

er)

Nd(

Aug

er)

O(1

s)

Ar(

2s)

C(1

s)

Ar(

2p) Nd

(4p)

Nd

loss

Nd(

4d)

Nd(

5s)

Nd(

5p)

Wide Scan Survey Spectrum

Page 259: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Neodymium metal (Z=60) Nd0

[CAS# 7440-00-8]E

l e c t r o n C

o u n t s

Binding Energy (eV)

35000

1025 9651013 1001 989 977

Baseline: 990.38 to 969.54 eV# 1: 974.45 eV 2.94 eV 45620.59 cts 5.49%# 2: 977.57 eV 2.46 eV 57198.58 cts 6.88%# 3: 980.74 eV 2.92 eV 537825.69 cts 64.70%# 4: 983.65 eV 2.95 eV 190666.75 cts 22.94%14 iterations, chi square = 3.6086

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.55 eVG:L Ratio: 70:30

∆E = 22.6 eV

Nd (3d 5/2)BE = 980.74 eV

Nd (3d 3/2)

Page 260: Vol 1 - XPS of Elements & Native Oxides - 1999

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Neodymium metal (Z=60) Nd0

[CAS# 7440-00-8]E

l e c t r o n C

o u n t s

Binding Energy (eV)

4200

45 -535 25 15 5

Baseline: 12.36 to -2.26 eV# 1: 0.92 eV 1.29 eV 8812.67 cts 11.60%# 2: 2.44 eV 1.48 eV 5758.27 cts 7.58%# 3: 3.99 eV 1.36 eV 7225.68 cts 9.51%# 4: 5.20 eV 1.57 eV 34640.15 cts 45.59%# 5: 6.66 eV 1.67 eV 13303.93 cts 17.51%# 6: 8.52 eV 2.30 eV 6234.76 cts 8.21%4 iterations, chi square = 2.2380

Valence Bands[Xe] 4f66s2

I.E. = 530 kJ/mol

Nd (4f)BE = 5.2 eV

Nd (5p)Nd (5s)

Page 261: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Nickel Metal (Z=28) Ni0

[CAS# 7440-02-0]

Detailed Surface Composition Table

Description: Nickel (Ni): 90 deg TOA Sum of 10 repetitive etch/scansDate: Tue Feb 15 1994

Corrected Exper. Sens Norm Relative Signal BE BE Factor Area Area Ni2s 1008.7 1008.7 4.29 24735 5765 Ni2p1 870.1 870.1 6.62 60557 9147 Ni2p3 852.8 852.8 12.85 126345 9832 Ni Auger 777.7 777.7 0.00 6828 0 Ni Auger 712.2 712.2 0.00 19564 0 Ni Auger 705.2 705.2 0.00 6442 0 Ni Auger 640.4 640.4 0.00 74593 0 Ni Auger 623.2 623.2 0.00 4137 0 O 1s 531.2 531.2 2.80 767 274 Ar2p 241.6 241.6 3.06 1237 404 Ni3s 110.5 110.5 0.92 7805 8517 Ni loss 77.8 77.8 0.00 975 0 Ni3p 66.0 66.0 2.29 22416 9787

Page 262: Vol 1 - XPS of Elements & Native Oxides - 1999

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Nickel Metal (Z=28) Ni0

[CAS# 7440-02-0]E

lect

ron

Cou

nts

Binding Energy (eV)

95000

1400 01120 840 560 280

Ni(2

s)

Ni(2

p1)

Ni(2

p3)

Ni(A

uger

)

Ni(A

uger

)N

i(Aug

er)

Ni(A

uger

)N

i(Aug

er)

O(1

s)

Ar(

2p)

Ni(3

s)

Ni l

oss

N

i(3p)

Wide Scan Survey Spectrum

Page 263: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Nickel Metal (Z=28) Ni0

[CAS# 7440-02-0]E

l e c t r o n C

o u n t s

Binding Energy (eV)

14000

890 840880 870 860 850

Baseline: 881.45 to 846.70 eV# 1: 852.58 eV 0.98 eV 284621.16 cts 35.53%# 2: 853.51 eV 1.74 eV 107418.20 cts 13.41%# 3: 855.46 eV 1.78 eV 43804.39 cts 5.47%# 4: 857.16 eV 1.51 eV 32318.52 cts 4.03%# 5: 858.51 eV 1.40 eV 43164.22 cts 5.39%# 6: 859.75 eV 1.47 eV 19247.71 cts 2.40%# 7: 869.85 eV 1.78 eV 157294.45 cts 19.63%# 8: 871.61 eV 1.59 eV 33555.80 cts 4.19%# 9: 873.25 eV 1.37 eV 23972.31 cts 2.99%#10: 874.51 eV 1.27 eV 20986.70 cts 2.62%#11: 875.94 eV 2.55 eV 34786.17 cts 4.34%24 iterations, chi square = 2.8056

Cu (2p3) at 932.67 eVAu (4f7) 83.98 eV

Ag FWHM: 0.49 eVG:L Ratio: 70:30

∆E = 17.27 eV

Ni (2p 3/2)BE = 852.58 eV

Ni (2p 1/2)BE = 869.85 eV

Page 264: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Nickel Metal (Z=28) Ni0

[CAS# 7440-02-0]

Ele

ctro

n C

ount

s

Binding Energy (eV)

15000

40 -1030 20 10 0

Valence Bands[Ar] 3d84s2

I.E. = 737 kJ/mol

BE = 22.5 eV

BE = 5.8 eV

BE = 0.50 eV

Page 265: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Oxygen (Z=8) in Lithium Hydroxide Monohydrate (FW=41.96) O : LiOH[CAS# 1310-66-3]

Detailed Surface Composition Table

Description: Oxygen (O) in LITHIUM HYDROXIDE (LiOH-xH2O) On Double Sided Tape, 1 mm from ScreenDate: Wed Jun 15 1988

Corrected Exper. Sens Norm Relative Signal BE BE Factor Area Area Atom % O Auger 979.5 973.3 0.00 42659 0 O loss 553.0 546.8 0.00 39458 0 * O 1s 531.7 525.5 2.24 153370 68463 45.32 C loss 301.8 295.6 0.00 1026 0 * C 1s 285.0 278.8 1.01 26559 26405 17.48 * Li1s 54.3 48.1 0.07 3975 56211 37.21 O 2s 23.1 16.9 0.18 7741 43438

Page 266: Vol 1 - XPS of Elements & Native Oxides - 1999

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Oxygen (Z=8) in Lithium Hydroxide Monohydrate (FW=41.96) O : LiOH[CAS# 1310-66-3]

Ele

ctro

n C

ount

s

Binding Energy (eV)

60000

1000 0800 600 400 200

O(A

uger

)

O lo

ss

O

(1s)

C lo

ss

C

(1s)

Li(1

s)

O(2

s)

Wide Scan Survey SpectrumCharge Neutralizer ON

Page 267: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Oxygen (Z=8) in Lithium Hydroxide Monohydrate (FW=41.96) O : LiOH[CAS# 1310-66-3]

Ele

ctro

n C

ount

s

Binding Energy (eV)

15000

536 516532 528 524 520

Baseline: 530.75 to 521.80 eV# 1: 525.80 eV 1.60 eV 300131.50 cts 82.87%# 2: 526.85 eV 1.32 eV 62034.04 cts 17.13%6 iterations, chi square = 1.7897

O (1s)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.70 eVG:L Ratio: 80:20

Charge Shift = 5.43 eV

CO3

BE = 531.2 eV

OH (hydroxide) ?BE = 532.3 eV

Page 268: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Oxygen (Z=8) in Lithium Hydroxide Monohydrate (FW=41.96) O : LiOH[CAS# 1310-66-3]

Ele

ctro

n C

ount

s

Binding Energy (eV)

850

56 4253.2 50.4 47.6 44.8

Baseline: 52.60 to 46.61 eV# 1: 49.45 eV 1.66 eV 25352.20 cts 100.00%11 iterations, chi square = 1.3617

Li (1s)Charge Shift = 5.43 eV

Li (mainly as Li2CO3)BE = 54.8 eV

Page 269: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Oxygen (Z=8) in Lithium Hydroxide Monohydrate (FW=41.96) O : LiOH[CAS# 1310-66-3]

E

l e c t r o n C

o u n t s

Binding Energy (eV)

1700

292 272288 284 280 276

Baseline: 288.00 to 275.53 eV# 1: 279.57 eV 1.56 eV 33017.48 cts 55.27%# 2: 281.16 eV 1.60 eV 2377.17 cts 3.98%# 3: 283.42 eV 1.47 eV 4747.53 cts 7.95%# 4: 284.63 eV 1.39 eV 19592.34 cts 32.80%4 iterations, chi square = 1.1601

C (1s)BE (HC) = 285.0 eV

Charge Shift = 5.43 eV

C-C, C-RBE = 285.0 eV

CO3

BE = 290.0 eV

Page 270: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Phosphorus (Z=15) P0

[CAS# 7723-14-0]

Detailed Surface Composition Table

Description: PHOSPHORUS (P) (35 Deg TOA, 80 Angstrom ion etch)Date: Tue Jul 5 1988

Corrected Exper. Sens Norm Relative Signal BE BE Factor Area Area Atom % O Auger 981.7 976.6 0.00 4113 0 * O 1s 534.7 529.6 2.23 19058 8550 3.32 * C 1s 285.0 279.9 1.00 9008 8966 3.48 S 2s 226.3 221.2 1.52 16379 10769 P loss 207.3 202.2 0.00 61672 0 * P 2s 188.2 183.1 1.30 149683 115092 93.20 P loss 168.6 163.5 1.33 18658 14067 P loss 149.9 144.8 0.00 68407 0 O 2s 28.5 23.4 0.18 3511 19810 P 2p 131.2 126.1 1.39 173431 0

Page 271: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Phosphorus (Z=15) P0

[CAS# 7723-14-0]E

lect

ron

Cou

nts

Binding Energy (eV)

110000

1000 0800 600 400 200

O(A

uger

) O(1

s) C(1

s)

P lo

ss

P

loss

P(2

s)P

loss

P lo

ss

O(2

s)

P(2

p)

Wide Scan Survey SpectrumCharge Neutralizer ON

Page 272: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Phosphorus (Z=15) P0

[CAS# 7723-14-0]E

lect

ron

Cou

nts

Binding Energy (eV)

5000

140 120136 132 128 124

Baseline: 128.78 to 122.98 eV# 1: 126.13 eV 0.72 eV 49029.11 cts 66.55%# 2: 126.99 eV 0.72 eV 24642.71 cts 33.45%8 iterations, chi square = 1.1882

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.55 eVG:L Ratio: 80:20

∆E = 0.86 eVCharge Shift = 4.39 eV

P (2p 3/2)BE = 130.5 eV

P (2p 1/2)BE = 131.4 eV

Page 273: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Phosphorus (Z=15) P0

[CAS# 7723-14-0]E

lect

ron

Cou

nts

Binding Energy (eV)

2600

292 272288 284 280 276

Baseline: 284.55 to 277.80 eV# 1: 280.61 eV 1.10 eV 34667.77 cts 78.68%# 2: 281.45 eV 1.33 eV 9395.84 cts 21.32%4 iterations, chi square = 2.9555

C (1s)BE (HC) = 285.0 eV

Charge Shift = 4.39 eV

C-C, C-RBE = 285.0 eV

Page 274: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Lead Metal (Z=82) Pb0

[CAS# 7439-92-1]

Detailed Surface Composition Table

Description: Lead (Pb) [Plumbum = Pb]Date: Fri Feb 25 1994

Corrected Exper. Sens Norm Relative Signal BE BE Factor Area Area Pb Auger 1390.9 1390.9 0.00 13603 0 Pb4s 891.7 891.7 1.70 2419 1421 Pb4p1 761.1 761.1 1.92 2339 1221 Pb4p3 643.6 643.6 5.90 20310 3445 Pb loss 446.9 446.9 0.00 2547 0 Pb4d3 434.3 434.3 8.64 31634 3663 Pb loss 425.5 425.5 0.00 1939 0 Pb4d5 412.0 412.0 12.73 53473 4200 Pb loss 149.8 149.8 0.00 18144 0 Pb4f 136.7 136.7 23.27 129961 5584 Pb5p1 106.3 106.3 0.54 1454 2689 Pb5p3 82.7 82.7 1.37 5061 3689 Pb loss 30.9 30.9 0.00 2948 0 Pb5d 17.7 17.7 2.80 17247 6159

Page 275: Vol 1 - XPS of Elements & Native Oxides - 1999

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Lead Metal (Z=82) Pb0

[CAS# 7439-92-1]E

lect

ron

Cou

nts

Binding Energy (eV)

110000

1400 01120 840 560 280

Pb

(Aug

er)

Pb(

4s)

Pb(

4p1)

Pb(

4p3)

Pb

loss

Pb(

4d3)

Pb

loss

P

b(4d

5)

Pb

loss

P

b(4f

)P

b(5p

1)P

b(5p

3)

Pb

loss

Pb(

5d)

Wide Scan Survey Spectrum

Page 276: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Lead Metal (Z=82) Pb0

[CAS# 7439-92-1]E

l e c t r o n C

o u n t s

Binding Energy (eV)

17000

150 130146 142 138 134

Baseline: 146.15 to 134.50 eV# 1: 136.86 eV 0.51 eV 178056.84 cts 45.65%# 2: 137.42 eV 0.70 eV 26014.70 cts 6.67%# 3: 138.20 eV 1.17 eV 17940.57 cts 4.60%# 4: 141.73 eV 0.54 eV 135103.69 cts 34.64%# 5: 142.27 eV 0.80 eV 19559.72 cts 5.01%# 6: 143.08 eV 1.19 eV 13372.31 cts 3.43%5 iterations, chi square = 3.0003

Cu (2p3) at 932.67 eVAu (4f7) 83.98 eV

Ag FWHM: 0.49 eVG:L Ratio: 80:20

∆E = 4.87 eV

Pb (4f 7/2)BE = 136.86 eV

Pb (4f 5/2)BE = 141.73 eV

Page 277: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Lead Metal (Z=82) Pb0

[CAS# 7439-92-1]E

lect

ron

Cou

nts

Binding Energy (eV)

900

15 -1010 5 0 -5

Valence Bands[Xe] 4f145d106s26p2

I.E. = 716 kJ/mol

BE = 0.6 eVBE = 2.4 eV

BE = 7.6 eV

Page 278: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Palladium Metal (Z=46) Pd0

[CAS# 7440-05-3]

Detailed Surface Composition Table

Description: Palladium (Pd)Date: Thu Feb 10 1994

Corrected Exper. Sens Norm Relative Signal BE BE Factor Area Area Pd Auger 1243.8 1243.8 0.43 5343 12303 Pd Auger 1213.0 1213.0 0.44 16984 38185 Pd Auger 1159.4 1159.4 0.00 41218 0 Pd3s 671.5 671.5 2.60 8676 3337 Pd3p1 560.0 560.0 3.64 34415 9466 Pd3p3 532.3 532.3 7.28 45270 6217 Pd loss 346.5 346.5 0.00 3132 0 Pd3d 335.1 335.1 15.90 166348 10461 C 1s 284.2 284.2 1.00 804 804 Ar2p 241.0 241.0 3.06 851 278 Pd4s 88.2 88.2 0.62 4157 6745 Pd4p 50.7 50.7 1.95 8778 4506 Pd4d 1.4 1.4 1.58 13385 8463

Page 279: Vol 1 - XPS of Elements & Native Oxides - 1999

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Palladium Metal (Z=46) Pd0

[CAS# 7440-05-3]E

lect

ron

Cou

nts

Binding Energy (eV)

36000

1400 01120 840 560 280

Pd(

Aug

er)

Pd(

3s)

Pd(

3p1) P

d(3p

3)

Pd

loss

P

d(3d

)

C(1

s)

Ar(

2p)

Pd(

4s)

Pd(

4p)

Pd(

4d)

Pd(

Aug

er)

Pd(

Aug

er)

Wide Scan Survey Spectrum

Page 280: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Palladium Metal (Z=46) Pd0

[CAS# 7440-05-3]E

l e c t r o n C

o u n t s

Binding Energy (eV)

18000

350 330346 342 338 334

Baseline: 345.10 to 332.50 eV# 1: 335.02 eV 0.66 eV 246914.22 cts 38.75%# 2: 335.61 eV 0.67 eV 73377.91 cts 11.52%# 3: 336.28 eV 1.14 eV 45617.19 cts 7.16%# 4: 337.55 eV 0.99 eV 15302.43 cts 2.40%# 5: 340.32 eV 0.69 eV 165286.69 cts 25.94%# 6: 340.93 eV 0.67 eV 49882.90 cts 7.83%# 7: 341.62 eV 0.83 eV 30682.38 cts 4.81%# 8: 342.51 eV 0.69 eV 10171.77 cts 1.60%50 iterations, chi square = 4.4647

Cu (2p3) at 932.67 eVAu (4f7) 83.98 eV

Ag FWHM: 0.49 eVG:L Ratio: 70:30

∆E = 5.30 eV

Pd (3d 5/2)BE = 335.02 eV

Pd (3d 3/2)BE = 340.32 eV

Page 281: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Palladium Metal (Z=46) Pd0

[CAS# 7440-05-3]E

lect

ron

Cou

nts

Binding Energy (eV)

26000

40 -1030 20 10 0

Valence Bands[Kr] 4d10

I.E. = 805 kJ/mol

BE = 0.80 eV

BE = 8.4 eV

BE = 2.4 eV

Page 282: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Praseodymium metal (Z=59) Pr0

[CAS# 7440-10-0]

Detailed Surface Composition Table

Description: PRASEODYMIUM (Pr) SHEET (90 TOA, SCRAPED UNDER CYCLOHEXANE)Date: Jan 19 1988

Corrected Exper. Sens Norm Relative Signal BE BE Factor Area Area Pr3d3 953.0 953.0 8.57 125433 14629 Pr3d5 932.5 932.5 12.97 313344 24161 Pr auger 897.1 897.1 0.00 8830 0 Pr auger 796.7 796.7 0.00 346076 0 Pr auger 692.4 692.4 0.00 14180 0 Pr auger 675.2 675.2 0.00 23795 0 O loss 544.1 544.1 0.00 4168 0 O 1s 530.3 530.3 2.23 18437 8268 Pr4s 303.6 303.6 1.26 22668 17996 Pr4p1 245.2 245.2 1.59 5443 3422 Pr loss 232.3 232.3 0.00 4616 0 Pr4p3 216.6 216.6 3.39 45993 13581 Pr loss 146.5 146.5 0.00 11487 0 Pr4d 113.9 113.9 8.77 297168 33886 Pr5s 36.3 36.3 0.30 3584 12019

Page 283: Vol 1 - XPS of Elements & Native Oxides - 1999

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Praseodymium metal (Z=59) Pr0

[CAS# 7440-10-0]E

lect

ron

Cou

nts

Binding Energy (eV)

78000

1000 0800 600 400 200

Pr(

3d3)

Pr(

3d5)

Pr

(Aug

er)

Pr

(Aug

er)

Pr

(Aug

er)

Pr

(Aug

er)

O lo

ss

O

(1s)

Pr(

4s)

Pr

loss

P

r lo

ss

Pr

(4p)

Pr

loss

Pr(

4d)

Pr(

5s)

Pr(

5p)

Wide Scan Survey Spectrum

Page 284: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Praseodymium metal (Z=59) Pr0

[CAS# 7440-10-0]E

l e c t r o n C

o u n t s

Binding Energy (eV)

120000

960 910950 940 930 920

Baseline: 960.00 to 921.36 eV# 1: 929.40 eV 2.96 eV 1230318.13 cts 17.21%# 2: 932.10 eV 2.75 eV 877373.38 cts 12.27%# 3: 934.47 eV 3.38 eV 2389882.75 cts 33.43%# 4: 946.89 eV 5.75 eV 344181.88 cts 4.81%# 5: 950.02 eV 2.75 eV 589829.50 cts 8.25%# 6: 952.62 eV 2.53 eV 542557.75 cts 7.59%# 7: 954.80 eV 2.61 eV 934977.38 cts 13.08%# 8: 957.28 eV 2.75 eV 240014.28 cts 3.36%11 iterations, chi square = 7.2661

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.55 eVG:L Ratio: 60:40

∆E = 20.62 eV

Pr (3d 5/2)BE = 929.40 eV

Pr (3d 3/2)BE = 950.02 eV

Page 285: Vol 1 - XPS of Elements & Native Oxides - 1999

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Praseodymium metal (Z=59) Pr0

[CAS# 7440-10-0]E

l e c t r o n C

o u n t s

Binding Energy (eV)

1000

15 -511 7 3 -1

Baseline: 9.98 to -1.63 eV# 1: 0.68 eV 1.06 eV 6097.76 cts 18.38%# 2: 1.73 eV 1.29 eV 4697.48 cts 14.16%# 3: 3.47 eV 1.32 eV 13441.23 cts 40.52%# 4: 4.60 eV 1.33 eV 4262.85 cts 12.85%# 5: 5.94 eV 1.33 eV 3139.41 cts 9.46%# 6: 7.22 eV 1.37 eV 1534.68 cts 4.63%5 iterations, chi square = 1.3081

Valence Bands[Xe] 4f36s2

I.E. = 523 kJ/mol

Page 286: Vol 1 - XPS of Elements & Native Oxides - 1999

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Platinum Metal (Z=78) Pt0

[CAS# 7440-06-4]

Detailed Surface Composition Table

Description: Platinum (Pt)Date: Fri Feb 18 1994

Corrected Exper. Sens Norm Relative Signal BE BE Factor Area Area Pt Auger 1334.0 1334.0 1.26 1745 1385 Pt Auger 1316.1 1316.1 0.00 2648 0 Pt Auger 1250.8 1250.8 0.00 2292 0 Pt4s 725.1 725.1 1.73 9855 5682 Pt4p1 609.1 609.1 2.01 13699 6817 Pt4p3 519.6 519.6 5.50 55357 10073 Pt4d3 331.2 331.2 7.72 65568 8495 Pt4d5 314.5 314.5 11.26 89397 7937 Ar2p 240.5 240.5 3.06 1143 373 Pt loss 103.0 103.0 0.00 18762 0 Pt4f 70.8 70.8 15.97 191291 11978 Pt5p3 51.5 51.5 1.08 8469 7860 Pt5d 3.9 3.9 1.54 6541 4247

Page 287: Vol 1 - XPS of Elements & Native Oxides - 1999

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Platinum Metal (Z=78) Pt0

[CAS# 7440-06-4]E

lect

ron

Cou

nts

Binding Energy (eV)

110000

1400 01120 840 560 280

Pt a

uger

P

t aug

er

Pt a

uger

Pt(

4s)

Pt(

4p1) P

t(4p

3)

Pt(

4d3) P

t(4d

5)

Ar(

2p)

Pt l

oss

Pt(

4f)

Pt(

5p3)

Pt(

5d)

Wide Scan Survey Spectrum

Page 288: Vol 1 - XPS of Elements & Native Oxides - 1999

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Platinum Metal (Z=78) Pt0

[CAS# 7440-06-4]E

l e c t r o n C

o u n t s

Binding Energy (eV)

16000

95 6589 83 77 71

Baseline: 78.35 to 67.00 eV# 1: 71.04 eV 0.78 eV 258376.05 cts 42.39%# 2: 71.84 eV 0.95 eV 63755.15 cts 10.46%# 3: 72.98 eV 1.12 eV 25949.91 cts 4.26%# 4: 74.39 eV 0.81 eV 197110.98 cts 32.34%# 5: 75.18 eV 0.75 eV 36272.23 cts 5.95%# 6: 75.93 eV 1.49 eV 28023.26 cts 4.60%12 iterations, chi square = 2.8287

Cu (2p3) at 932.67 eVAu (4f7) 83.98 eV

Ag FWHM: 0.49 eVG:L Ratio: 80:20

∆E = 3.35 eV

Pt (4f 7/2)BE = 71.04 eV

Pt (4f 5/2)BE = 74.39 eV

Page 289: Vol 1 - XPS of Elements & Native Oxides - 1999

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Platinum Metal (Z=78) Pt0

[CAS# 7440-06-4]E

lect

ron

Cou

nts

Binding Energy (eV)

20000

40 -1030 20 10 0

Valence Bands[Xe] 4f145d96s1

I.E. = 870 kJ/molBE = 1.9 eV

BE = 0.6 eV

BE = 4.3 eV

BE = 6.0 eV

Page 290: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Rubidium (Z=37) in Rubidium Acetate (FW=144.52) Rb : RbOAc[CAS# 563-67-7]

Detailed Surface Composition Table

Description: RUBIDIUM ACETATE (RbOAc) 90 TOA, FRESHLY GROUND, 1 mm from Mesh)Date: Thu Jun 16 1988

Corrected Exper. Sens Norm Relative Signal BE BE Factor Area Area Atom % O Auger 977.4 971.5 0.00 13940 0 O loss 556.8 550.9 0.00 6190 0 * O 1s 531.5 525.5 2.24 47539 21220 34.19 * Rb3s 321.8 315.8 1.70 15692 9228 14.87 * C 1s 285.0 279.0 1.01 31788 31613 50.94 Rb loss 264.3 258.3 0.00 6390 0 Rb (3p) 237.9 231.9 4.21 65001 15424 Rb loss 136.8 130.8 12.01 23411 1949 Rb3d 109.9 103.9 4.98 52407 10533 Rb loss 39.1 33.1 0.36 1243 3436 Rb4s 28.8 22.8 0.32 4252 13373 Rb4p 13.2 7.2 0.80 9517 11869

Page 291: Vol 1 - XPS of Elements & Native Oxides - 1999

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Rubidium (Z=37) in Rubidium Acetate (FW=144.52) Rb : RbOAc[CAS# 563-67-7]

Ele

ctro

n C

ount

s

Binding Energy (eV)

35000

1000 0800 600 400 200

O(A

uger

)

O lo

ss

O(1

s)

Rb(

3s)

C(1

s)R

b lo

ss

Rb

(3p)

Rb

loss

Rb(

3d)

Rb

loss

R

b(4s

) Rb(

4p)

Wide Scan Survey SpectrumCharge Neutralizer ON

Page 292: Vol 1 - XPS of Elements & Native Oxides - 1999

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Rubidium (Z=37) in Rubidium Acetate (FW=144.52) Rb : RbOAc[CAS# 563-67-7]

E

l e c t r o n C

o u n t s

Binding Energy (eV)

6000

115 95111 107 103 99

Baseline: 110.84 to 100.96 eV# 1: 104.52 eV 1.41 eV 108997.70 cts 54.74%# 2: 106.01 eV 1.31 eV 72466.37 cts 36.40%# 3: 107.12 eV 2.71 eV 17641.08 cts 8.86%3 iterations, chi square = 1.2807

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.70 eVG:L Ratio: 80:20

∆E = 1.49 eVCharge Shift = 5.17 eV

Rb (3d 5/2)BE = 109.7 eV

Rb (3d 3/2)BE = 111.2 eV

Page 293: Vol 1 - XPS of Elements & Native Oxides - 1999

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Rubidium (Z=37) in Rubidium Acetate (FW=144.52) Rb : RbOAc[CAS# 563-67-7]

Ele

ctro

n C

ount

s

Binding Energy (eV)

2400

292 272288 284 280 276

Baseline: 286.59 to 276.39 eV# 1: 279.83 eV 1.43 eV 44537.43 cts 69.68%# 2: 282.96 eV 1.45 eV 19376.14 cts 30.32%8 iterations, chi square = 1.9655

C (1s)BE (HC) = 285.0 eV

Charge Shift = 5.17 eV

C-C, C-RBE = 285.0 eV

CO3

BE = 288.1 eV

Page 294: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Rubidium (Z=37) in Rubidium Acetate (FW=144.52) Rb : RbOAc[CAS# 563-67-7]

Ele

ctro

n C

ount

s

Binding Energy (eV)

5000

536 516532 528 524 520

Baseline: 530.82 to 521.88 eV# 1: 525.75 eV 1.56 eV 94688.73 cts 89.15%# 2: 527.47 eV 1.72 eV 11518.67 cts 10.85%3 iterations, chi square = 1.5592

O (1s)Charge Shift = 5.17 eV

CO3

BE = 530.9 eV

Page 295: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Rhenium Metal (Z=75) Re0

[CAS# 7440-15-5]

Detailed Surface Composition Table

Description: Rhenium (Re)Date: Mon Feb 21 1994

Corrected Exper. Sens Norm Relative Signal BE BE Factor Area Area Re Auger 1322.3 1322.3 0.00 9212 0 Re4s 625.2 625.2 1.72 6061 3521 O 1s 530.3 530.3 2.80 1060 378 Re4p1 518.5 518.5 2.03 7754 3819 Re4p3 446.4 446.4 5.15 27951 5428 C 1s 283.9 283.9 1.00 1293 1293 Re4d3 273.5 273.5 6.96 30781 4421 Re4d5 260.0 260.0 10.10 48507 4802 Ar2p 241.9 241.9 3.06 661 216 Re loss 81.8 81.8 0.00 610 0 Re loss 70.0 70.0 0.00 5780 0 Re loss 51.7 51.7 0.00 3564 0 Re4f 40.0 40.0 11.50 80721 7018 Re5d 2.8 2.8 0.80 6103 7677

Page 296: Vol 1 - XPS of Elements & Native Oxides - 1999

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Rhenium Metal (Z=75) Re0

[CAS# 7440-15-5]E

lect

ron

Cou

nts

Binding Energy (eV)

52000

1400 01120 840 560 280

Re(

4s)

O(1

s)R

e(4p

1) Re(

4p3)

C(1

s)R

e(4d

3) Re(

4d5)

Ar(

2p)

Re

loss

R

e lo

ss

Re

loss

R

e(4f

)

Re

(aug

er)

Re(

5d)

Wide Scan Survey Spectrum

Page 297: Vol 1 - XPS of Elements & Native Oxides - 1999

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Rhenium Metal (Z=75) Re0

[CAS# 7440-15-5]E

l e c t r o n C

o u n t s

Binding Energy (eV)

11000

54 3450 46 42 38

Baseline: 48.15 to 37.45 eV# 1: 40.23 eV 0.41 eV 96425.30 cts 42.19%# 2: 40.62 eV 0.43 eV 21276.67 cts 9.31%# 3: 41.09 eV 0.46 eV 7448.90 cts 3.26%# 4: 41.58 eV 0.49 eV 4924.56 cts 2.15%# 5: 42.65 eV 0.47 eV 72637.02 cts 31.78%# 6: 43.07 eV 0.59 eV 16388.88 cts 7.17%# 7: 43.65 eV 0.68 eV 5705.88 cts 2.50%# 8: 44.43 eV 0.98 eV 3719.62 cts 1.63%6 iterations, chi square = 3.4318

Cu (2p3) at 932.67 eVAu (4f7) 83.98 eV

Ag FWHM: 0.49 eVG:L Ratio: 90:10

∆E = 2.42 eV

Re (4f 7/2)BE = 40.23 eV

Re (4f 5/2)BE = 42.65 eV

Page 298: Vol 1 - XPS of Elements & Native Oxides - 1999

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Rhenium Metal (Z=75) Re0

[CAS# 7440-15-5]E

lect

ron

Cou

nts

Binding Energy (eV)

7000

30 -1022 14 6 -2

Valence Bands[Xe] 4f145d26s2

I.E. = 760 kJ/mol

BE = 2.1 eV BE = 0.8 eV

BE = 3.4 eV

BE = 5.5 eV

Page 299: Vol 1 - XPS of Elements & Native Oxides - 1999

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Rhodium Metal (Z=45) Rh0

[CAS# 7440-16-6]

Detailed Surface Composition Table

Description: Rhodium (Rh)Date: Tue Mar 1 1994

Corrected Exper. Sens Norm Relative Signal BE BE Factor Area Area Rh Auger 1265.0 1265.0 0.40 1820 4558 Rh Auger 1234.7 1234.7 0.41 2879 7027 Rh Auger 1185.5 1185.5 0.00 25805 0 Rh3s 627.8 627.8 2.52 16839 6670 Rh3p1 521.3 521.3 3.48 34536 9913 Rh3p3 496.3 496.3 6.94 127254 18347 Rh loss 339.7 339.7 0.00 3541 0 Rh3d 307.0 307.0 14.13 339883 24051 C 1s 283.9 283.9 1.00 1417 1417 Ar2p 241.1 241.1 3.06 2078 679 Rh4s 80.7 80.7 0.58 7608 13167 Rh4p 47.0 47.0 1.81 34402 18962 Rh4d 1.4 1.4 0.95 27448 28977

Page 300: Vol 1 - XPS of Elements & Native Oxides - 1999

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Rhodium Metal (Z=45) Rh0

[CAS# 7440-16-6]E

lect

ron

Cou

nts

Binding Energy (eV)

130000

1400 01120 840 560 280

Rh(

Aug

er)

Rh(

Aug

er)

Rh(

Aug

er)

Rh(

3s) R

h(3p

1) Rh(

3p3)

Rh

loss

Rh(

3d)

C(1

s)

Ar(

2p)

Rh(

4s)

Rh(

4p)

Rh(

4d)

Wide Scan Survey Spectrum

Page 301: Vol 1 - XPS of Elements & Native Oxides - 1999

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Rhodium Metal (Z=45) Rh0

[CAS# 7440-16-6]E

l e c t r o n C

o u n t s

Binding Energy (eV)

30000

320 300316 312 308 304

Baseline: 318.80 to 303.15 eV# 1: 307.18 eV 0.60 eV 364659.28 cts 41.54%# 2: 307.82 eV 0.95 eV 101383.66 cts 11.55%# 3: 308.86 eV 0.98 eV 30295.72 cts 3.45%# 4: 310.23 eV 1.52 eV 21743.38 cts 2.48%# 5: 311.91 eV 0.93 eV 243325.36 cts 27.72%# 6: 312.79 eV 1.22 eV 67382.63 cts 7.68%# 7: 313.85 eV 1.01 eV 20222.03 cts 2.30%# 8: 314.80 eV 1.11 eV 14534.06 cts 1.66%# 9: 316.02 eV 1.88 eV 14332.87 cts 1.63%5 iterations, chi square = 3.7364

Cu (2p3) at 932.67 eVAu (4f7) 83.98 eV

Ag FWHM: 0.49 eVG:L Ratio: 70:30

∆E = 4.73 eV

Rh (3d 5/2)BE = 307.18 eV

Rh (3d 3/2)BE = 311.91 eV

Page 302: Vol 1 - XPS of Elements & Native Oxides - 1999

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Rhodium Metal (Z=45) Rh0

[CAS# 7440-16-6]E

lect

ron

Cou

nts

Binding Energy (eV)

18000

40 -1030 20 10 0

Valence Bands[Kr]4d85s1

I.E. = 720 kJ/mol

BE = 1.0 eV

BE = 2.5 eV

BE = 4.4 eV

BE = 9.3 eV

Page 303: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Ruthenium Metal (Z=44) Ru0

[CAS# 7440-18-8]

Detailed Surface Composition Table

Description: Ruthenium (Ru)Date: Thu Jan 27 1994

Corrected Exper. Sens Norm Relative Signal BE BE Factor Area Area Ru Auger 1259.8 1255.0 0.37 2418 6476 Ru Auger 1217.0 1212.2 0.00 2521 0 Ru3s 591.0 586.2 2.43 3432 1415 Ru3p1 488.4 483.7 3.32 10154 3061 Ru3p3 466.1 461.3 6.57 21708 3306 Ru3d 284.8 280.0 12.50 65820 5266 Ar2p 245.9 241.1 3.06 191 62 S 2p 162.5 157.7 1.71 578 338 Ru4s 80.0 75.2 0.54 2405 4487 Ru4p 47.9 43.1 1.65 7396 4484 Ru4d 9.0 4.2 0.70 3454 4966

Page 304: Vol 1 - XPS of Elements & Native Oxides - 1999

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Ruthenium Metal (Z=44) Ru0

[CAS# 7440-18-8]E

lect

ron

Cou

nts

Binding Energy (eV)

28000

1400 01120 840 560 280

Ru(

Aug

er)

Ru(

3s) R

u(3p

1) Ru(

3p3)

Ru(

3d)

Ar(

2p)

S(2

p)

Ru(

4s)

Ru(

4p)

Ru(

4d)

Ru(

Aug

er)

Wide Scan Survey Spectrum

Page 305: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Ruthenium Metal (Z=44) Ru0

[CAS# 7440-18-8]

E

l e c t r o n C

o u n t s

Binding Energy (eV)

50000

295 275291 287 283 279

Baseline: 289.80 to 276.90 eV# 1: 280.07 eV 0.51 eV 527466.13 cts 41.06%# 2: 280.52 eV 0.62 eV 139756.05 cts 10.88%# 3: 281.12 eV 0.64 eV 42662.31 cts 3.32%# 4: 281.92 eV 1.72 eV 55761.15 cts 4.34%# 5: 283.51 eV 0.32 eV 6265.90 cts 0.49%# 6: 284.23 eV 0.87 eV 350541.00 cts 27.28%# 7: 284.83 eV 0.96 eV 92590.41 cts 7.21%# 8: 285.53 eV 1.04 eV 28574.92 cts 2.22%# 9: 286.15 eV 2.64 eV 37034.08 cts 2.88%#10: 288.50 eV 1.50 eV 4102.76 cts 0.32%7 iterations, chi square = 3.4305

Cu (2p3) at 932.67 eVAu (4f7) 83.98 eV

Ag FWHM: 0.49 eVG:L Ratio: 70:30

∆E = 4.16 eV

Ru (3d 5/2)BE = 280.07 eV

Ru (3d 3/2)BE = 284.23 eV

Page 306: Vol 1 - XPS of Elements & Native Oxides - 1999

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Ruthenium Metal (Z=44) Ru0

[CAS# 7440-18-8]

Ele

ctro

n C

ount

s

Binding Energy (eV)

60000

40 -1030 20 10 0

Valence Bands[Kr] 4d75s1

I.E. = 711 kJ/mol

BE = 2.0 eV

BE = 4.8 eV

BE = 0.6 eV

BE = 11.6 eV

Page 307: Vol 1 - XPS of Elements & Native Oxides - 1999

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Sulfur (Z=16) S0

[CAS# 7704-34-9]

Detailed Surface Composition Table

Description: SULFUR (S) CRYSTAL (POLYMORPHIC) Natural Mixture of α-type and β-type SulfurDate: Sun Dec 14 1986

Corrected Exper. Sens Norm Relative Signal BE BE Factor Area Area C 1s 285.0 279.8 1.00 3711 3693 S loss 267.5 262.2 0.00 9944 0 S loss 249.6 244.3 0.00 50855 0 S 2s 228.6 223.4 1.52 129592 85377 S loss 205.1 199.8 0.00 9771 0 S loss 185.3 180.1 0.00 77964 0 S 2p 164.4 159.2 1.89 180506 95554 S 3s 17.5 12.3 0.19 4948 26345

Page 308: Vol 1 - XPS of Elements & Native Oxides - 1999

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Sulfur (Z=16) S0

[CAS# 7704-34-9]E

lect

ron

Cou

nts

Binding Energy (eV)

95000

1000 0800 600 400 200

C(1

s)S

loss

S lo

ss

S

(2s)

S lo

ss

S

loss

S(2

p)

S(3

s)

Wide Scan Survey SpectrumCharge Neutralizer ON

Page 309: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Sulfur (Z=16) S0

[CAS# 7704-34-9]E

l e c t r o n C

o u n t s

Binding Energy (eV)

3500

171 151167 163 159 155

Baseline: 163.63 to 157.90 eV# 1: 160.25 eV 0.77 eV 26945.01 cts 41.73%# 2: 160.85 eV 0.87 eV 16089.88 cts 24.92%# 3: 161.44 eV 0.78 eV 13524.78 cts 20.95%# 4: 162.00 eV 0.85 eV 8008.66 cts 12.40%5 iterations, chi square = 1.4579

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.70 eVG:L Ratio: 80:20

∆E = 1.19 eVCharge Shift = 3.65 eV

S (2p 3/2) α-typeBE = 163.9 eV

S (2p 1/2) α-typeBE = 165.1 eV

Page 310: Vol 1 - XPS of Elements & Native Oxides - 1999

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Sulfur (Z=16) S0

[CAS# 7704-34-9]E

l e c t r o n C

o u n t s

Binding Energy (eV)

8000

40 -1030 20 10 0

Baseline: 19.61 to -3.92 eV# 1: 0.13 eV 1.60 eV 69577.51 cts 28.40%# 2: 3.01 eV 1.71 eV 45490.93 cts 18.57%# 3: 4.87 eV 1.40 eV 21477.05 cts 8.77%# 4: 7.58 eV 1.55 eV 15418.07 cts 6.29%# 5: 9.50 eV 1.83 eV 28338.68 cts 11.57%# 6: 11.99 eV 2.28 eV 27588.45 cts 11.26%# 7: 14.28 eV 2.16 eV 24587.38 cts 10.03%# 8: 16.08 eV 2.15 eV 12542.67 cts 5.12%6 iterations, chi square = 2.6598

Valence Bands[Ne] 3s23p4

I.E. (S) = 999 kJ/molCharge Shift = 3.65 eV

BE = 3.8 eV

BE = 6.7 eV

Page 311: Vol 1 - XPS of Elements & Native Oxides - 1999

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Sulfur (Z=16) S0

[CAS# 7704-34-9]E

lect

ron

Cou

nts

Binding Energy (eV)

5000

292 272288 284 280 276

Baseline: 285.70 to 277.35 eV# 1: 281.35 eV 1.41 eV 31327.12 cts 100.00%9 iterations, chi square = 6.3893

C (1s)BE (HC) = 285.0 eV

Charge Shift = 3.65 eVC-C, C-RBE = 285.0 eV

Page 312: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Antimony Metal (Z=51) Sb0

[CAS# 7440-36-0]

Detailed Surface Composition Table

Description: Antimony (Sb) [Stibium = Sb]Date: Sun Mar 13 1994

Corrected Exper. Sens Norm Relative Signal BE BE Factor Area Area Sb Auger 1112.9 1112.9 0.09 22409 262099 Sb Auger 1031.9 1031.9 0.00 20270 0 Sb Auger 1022.5 1022.5 0.00 8078 0 Sb Auger 995.0 995.0 0.09 1074 11891 Sb Auger 945.5 945.5 2.86 4426 1545 Sb3p1 812.6 812.6 4.24 13606 3209 Sb loss 782.2 782.2 0.00 7072 0 Sb3p3 766.4 766.4 8.82 26360 2989 Sb loss 553.3 553.3 0.00 8781 0 Sb loss 544.2 544.2 0.00 8843 0 Sb3d 528.8 528.8 26.51 78979 2979 Ar2p 242.2 242.2 3.06 382 125 Sb4s 152.9 152.9 0.87 2271 2623 Sb4p 100.6 100.6 2.96 2587 873 Sb loss 48.0 48.0 0.11 6650 60522 Sb4d 31.7 31.7 3.26 17823 5463

Page 313: Vol 1 - XPS of Elements & Native Oxides - 1999

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Antimony Metal (Z=51) Sb0

[CAS# 7440-36-0]E

lect

ron

Cou

nts

Binding Energy (eV)

110000

1400 01120 840 560 280

Sb(

Aug

er)

Sb(

Aug

er)

Sb(

3p1)

Sb

loss

S

b(3p

3)

Sb

loss

S

b lo

ss

Sb(

3d3)

Ar(

2p)

Sb(

4s)

Sb(

4p)

Sb

loss

Sb(

4d)

Sb(

3d)

Sb(

Aug

er)

Sb(

Aug

er)

Sb(

Aug

er)

Wide Scan Survey Spectrum

Page 314: Vol 1 - XPS of Elements & Native Oxides - 1999

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Antimony Metal (Z=51) Sb0

[CAS# 7440-36-0]E

l e c t r o n C

o u n t s

Binding Energy (eV)

39000

550 520544 538 532 526

Baseline: 548.95 to 523.35 eV# 1: 528.18 eV 0.72 eV 644140.88 cts 50.09%# 2: 529.49 eV 1.91 eV 32805.36 cts 2.55%# 3: 537.55 eV 0.73 eV 448462.03 cts 34.87%# 4: 539.10 eV 2.15 eV 25033.83 cts 1.95%# 5: 544.13 eV 3.74 eV 135599.00 cts 10.54%

Cu (2p3) at 932.67 eVAu (4f7) 83.98 eV

Ag FWHM: 0.49 eVG:L Ratio: 70:30

∆E = 9.37 eV

Sb (3d 5/2)BE = 528.18 eV

Sb (3d 3/2)BE = 537.55 eV

Page 315: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Antimony Metal (Z=51) Sb0

[CAS# 7440-36-0]E

lect

ron

Cou

nts

Binding Energy (eV)

2500

15 -511 7 3 -1

Valence Bands[Kr]4d105s25p3

I.E. = 834 kJ/mol

BE = 2.1 eV

BE = 9.4eV

Page 316: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Scandium Metal (Z=21) Sc0

[CAS# 7740-20-2]

Detailed Surface Composition Table

Description: Scandium (Sc)Date: Mon Mar 14 1994

Corrected Exper. Sens Norm Relative Signal BE BE Factor Area Area Sc Auger 1148.9 1148.9 2.26 7650 3385 Sc Auger 1117.7 1117.7 0.00 3910 0 Sc2s 498.0 498.0 2.80 8582 3067 Sc2p1 411.9 411.9 2.12 17090 8054 Sc2p3 398.4 398.4 4.13 32647 7910 Ar2s 321.1 321.1 1.96 1085 554 Ar2p 243.7 243.7 3.06 2428 793 Sc3s 50.7 50.7 0.43 2171 5097 Sc3p 28.2 28.2 0.68 5955 8814

Page 317: Vol 1 - XPS of Elements & Native Oxides - 1999

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Scandium Metal (Z=21) Sc0

[CAS# 7740-20-2]E

lect

ron

Cou

nts

Binding Energy (eV)

30000

1400 01120 840 560 280

Sc

(Aug

er)

Sc

(Aug

er)

Sc(

2s)

Sc(

2p1)

Sc(

2p3)

Ar(

2s)

Ar(

2p)

Sc(

3s)

Sc(

3p)

Wide Scan Survey Spectrum

Page 318: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Scandium Metal (Z=21) Sc0

[CAS# 7740-20-2]E

l e c t r o n C

o u n t s

Binding Energy (eV)

26000

425 385417 409 401 393

Baseline: 406.85 to 395.75 eV# 1: 398.39 eV 0.66 eV 286852.81 cts 40.38%# 2: 398.94 eV 0.96 eV 150093.63 cts 21.13%# 3: 399.69 eV 1.09 eV 32392.36 cts 4.56%# 4: 403.24 eV 0.83 eV 142648.28 cts 20.08%# 5: 403.89 eV 1.20 eV 75048.60 cts 10.57%# 6: 405.20 eV 1.41 eV 16275.80 cts 2.29%# 7: 396.38 eV 0.65 eV 7003.41 cts 0.99%15 iterations, chi square = 3.7593

Cu (2p3) at 932.67 eVAu (4f7) 83.98 eV

Ag FWHM: 0.49 eVG:L Ratio: 70:30

∆E = 4.85 eV

Sc (2p 3/2)BE = 398.39 eV

Sc (2p 1/2)BE = 403.24 eV

N (1s)nitride contaminationBE = 396.38 eV

Page 319: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Scandium Metal (Z=21) Sc0

[CAS# 7740-20-2]E

lect

ron

Cou

nts

Binding Energy (eV)

1500

15 -511 7 3 -1

Valence Bands[Ar] 3d14s2

I.E. = 631 kJ/mol

BE = 0.4 eV

BE = 10.7 eV

BE = 14.2 eV

Page 320: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Selenium (Z=34) Se0

[CAS# 7782-49-2]

Detailed Surface Composition Table

Description: Selenium (Se)Date: Tue Mar 8 1994

Corrected Exper. Sens Norm Relative Signal BE BE Factor Area Area C Auger 1220.8 1220.8 0.00 6838 0 O 1s 532.0 532.0 2.80 4262 1522 Se Auger 497.1 497.1 0.00 1914 9476 Se Auger 474.0 474.0 0.00 1365 6727 Se Auger 453.0 453.0 0.00 1832 8991 Se Auger 399.8 399.8 0.00 2906 14120 Se Auger 388.3 388.3 0.00 5622 27259 Se Auger 358.6 358.6 0.00 3885 18737 Se Auger 315.1 315.1 0.00 3431 16422 Se Auger 296.2 296.2 0.00 16559 0 Se+C 284.5 284.5 1.00 18316 18316 Se Auger 255.1 255.1 0.00 8701 0 Ar2p 246.9 246.9 3.06 1461 478 Se3s 229.9 229.9 1.44 8173 5665 Se Auger 220.5 220.5 0.00 1604 7559 Se Auger 198.4 198.4 0.00 19388 91054 Se Auger 178.7 178.7 0.00 70534 0

Page 321: Vol 1 - XPS of Elements & Native Oxides - 1999

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Selenium (Z=34) Se0

[CAS# 7782-49-2]

Detailed Surface Composition Table (continued)

Description: Selenium (Se)Date: Tue Mar 8 1994

Corrected Exper. Sens Norm Relative Signal BE BE Factor Area Area Se3p1 167.3 167.3 1.73 4173 2419 Se3p3 161.7 161.7 3.33 12052 3616 Se Auger 115.5 115.5 0.24 1904 7793 Se Auger 137.8 137.8 0.00 29529 0 Se loss 74.9 74.9 0.00 6182 0 Se3d 54.9 54.9 2.37 13737 5792 Se4p 5.3 5.3 0.22 377 1722

Page 322: Vol 1 - XPS of Elements & Native Oxides - 1999

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Selenium (Z=34) Se0

[CAS# 7782-49-2]E

lect

ron

Cou

nts

Binding Energy (eV)

200000

1400 01120 840 560 280

O(1

s)

Se(

Aug

er)

Se(

Aug

er)

Se(

Aug

er)

Se(

Aug

er)

Se(

Aug

er)

Se(

Aug

er)

Se(

Aug

er)

Se(

Aug

er)

Se+

C

S

e(A

uger

)A

r(2p

) Se(

3s)

Se(

Aug

er)

Se(

Aug

er)

Se(

Aug

er)

Se(

Aug

er)

Se(

3d)

Se(

4p)

C(A

uger

)

Se(

3p1)

Se(

3p3)

Se(

Aug

er)

Se

loss

Wide Scan Survey Spectrum

Page 323: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Selenium (Z=34) Se0

[CAS# 7782-49-2]E

lect

ron

Cou

nts

Binding Energy (eV)

3000

68 4864 60 56 52

Baseline: 57.70 to 52.70 eV# 1: 54.88 eV 0.70 eV 43195.57 cts 55.84%# 2: 55.73 eV 0.72 eV 34157.31 cts 44.16%4 iterations, chi square = 1.3893

Cu (2p3) at 932.67 eVAu (4f7) 83.98 eV

Ag FWHM: 0.49 eVG:L Ratio: 90:10

∆E = 0.85 eV

Se (3d 5/2)BE = 54.88 eV

Se (3d 3/2)BE = 55.73 eV

Page 324: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Selenium (Z=34) Se0

[CAS# 7782-49-2]E

lect

ron

Cou

nts

Binding Energy (eV)

5200

15 -511 7 3 -1

Valence Bands[Ar] 3d104s24p4

I.E. = 941 kJ/mol

BE = 2.6 eV

BE = 9.8 eV

BE = 4.7 eVBE = 5.7 eV

BE = 8.0 eV

Page 325: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Silicon (Z=14) Si0

[CAS# 7740-21-3]

Detailed Surface Composition Table

Description: Silicon (Si): un-doped wafer, argon ion etchedDate: Sun Mar 6 1994

Corrected Exper. Sens Norm Relative Signal BE BE Factor Area Area Si Auger 1395.0 1395.0 0.57 2179 3823 Ar2s 319.9 319.9 1.96 1551 792 Ar2p 242.0 242.0 3.06 3158 1032 Si loss 183.7 183.7 0.00 733 0 Si loss 167.6 167.6 0.00 6036 0 Si2s 150.5 150.5 0.98 12151 12405 Si loss 133.6 133.6 0.00 1420 0 Si loss 116.2 116.2 0.20 5030 25127 Si2p 99.1 99.1 0.84 9955 11840 Ar3s 22.5 22.5 0.24 404 1711 Ar3p 9.1 9.1 0.25 624 2474

Page 326: Vol 1 - XPS of Elements & Native Oxides - 1999

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Silicon (Z=14) Si0

[CAS# 7740-21-3]E

lect

ron

Cou

nts

Binding Energy (eV)

15000

1400 01120 840 560 280

Si (

Aug

er)

Ar(

2s)

Ar(

2p)

Si l

oss

Si l

oss

S

i(2s)

Si l

oss

S

i los

s

Si(2

p)

Ar(

3s)

Ar(

3p)

Si l

oss

Ar

loss

Ar

loss

Wide Scan Survey Spectrum

Page 327: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Silicon (Z=14) Si0

[CAS# 7740-21-3]

E

l e c t r o n C

o u n t s

Binding Energy (eV)

900

112 92108 104 100 96

Baseline: 105.95 to 98.40 eV# 1: 99.79 eV 0.39 eV 7468.54 cts 51.45%# 2: 100.39 eV 0.38 eV 3765.85 cts 25.94%# 3: 100.84 eV 0.52 eV 423.64 cts 2.92%# 4: 102.59 eV 0.84 eV 543.53 cts 3.74%# 5: 103.53 eV 1.52 eV 2314.76 cts 15.95%3 iterations, chi square = 1.3031

Cu (2p3) at 932.67 eVAu (4f7) 83.98 eV

Ag FWHM: 0.49 eVG:L Ratio: 80:20

∆E = 0.60eV

Si (2p 3/2)BE = 99.79 eV

Si (2p 1/2)BE = 100.39 eV

SiO2

BE = 103.53 eV

Page 328: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Silicon (Z=14) Si0

[CAS# 7740-21-3]E

lect

ron

Cou

nts

Binding Energy (eV)

1600

15 -511 7 3 -1

Valence Bands[Ne] 3s23p2

I.E. = 786 kJ/mol

BE = 1.8 eV

Ar (3p)

Page 329: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Samarium metal (Z=62) Sm0

[CAS# 7440-19-9]

Detailed Surface Composition Table

Description: SAMARIUM (Sm) SHEET (FILED & ION ETCHED AT 3 KeV)Date: JAN 16 1988

Corrected Exper. Sens Norm Relative Signal BE BE Factor Area Area O Auger 977.3 974.7 0.00 26362 0 Sm Auger 684.6 682.0 0.16 135209 838638 Sm Auger 564.2 561.7 0.19 35674 187181 Sm Auger 550.5 547.9 0.19 43851 226051 O 1s 532.7 530.2 2.23 91010 40861 Sm Auger 418.8 416.2 0.23 16649 73311 Sm Auger 398.0 395.4 0.23 19814 85257 Sm4s 351.7 349.1 1.33 60878 45805 Sm4p1 285.0 282.4 1.70 44501 26120 Sm loss 269.9 267.3 0.00 11994 0 Sm4p3 252.1 249.5 3.72 130403 35091 Sm loss 164.3 161.7 0.00 27578 0 Sm4d 135.0 132.4 10.56 492830 46649 Sm5s 43.2 40.7 0.33 14904 45748 O 2s 22.2 19.6 0.18 65900 370612

Page 330: Vol 1 - XPS of Elements & Native Oxides - 1999

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Samarium metal (Z=62) Sm0

[CAS# 7440-19-9]E

lect

ron

Cou

nts

Binding Energy (eV)

80000

1000 0800 600 400 200

O(A

uger

)

Sm

(Aug

er)

Sm

(Aug

er)

O lo

ss

O

(1s)

Sm

(Aug

er)

Sm

(Aug

er)

Sm

(4s)

C(1

s)S

m lo

ss

Sm

(4p3

)

Sm

loss

Sm

(4d)

Sm

loss

S

m(5

s)S

m(5

p)

Wide Scan Survey Spectrum

Page 331: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Samarium metal (Z=62) Sm0

[CAS# 7440-19-9]E

l e c t r o n C

o u n t s

Binding Energy (eV)

7500

160 120152 144 136 128

Baseline: 145.57 to 120.94 eV# 1: 123.34 eV 2.12 eV 7674.67 cts 2.42%# 2: 126.08 eV 2.02 eV 5404.90 cts 1.71%# 3: 128.66 eV 2.52 eV 67956.68 cts 21.44%# 4: 131.43 eV 2.40 eV 82572.47 cts 26.05%# 5: 133.61 eV 2.20 eV 55882.69 cts 17.63%# 6: 135.49 eV 2.03 eV 49219.47 cts 15.53%# 7: 137.36 eV 2.04 eV 27323.18 cts 8.62%# 8: 139.24 eV 3.20 eV 20944.21 cts 6.61%8 iterations, chi square = 2.1670

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.55 eVG:L Ratio: 70:30

Sm (4d 5/2)BE = 128.66 eV

Sm Oxide

Sm (4d 3/2)BE = 133.61 eV

Page 332: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Samarium metal (Z=62) Sm0

[CAS# 7440-19-9]E

l e c t r o n C

o u n t s

Binding Energy (eV)

3000

17 -313 9 5 1

Baseline: 13.63 to -1.43 eV# 1: 0.57 eV 1.36 eV 9220.74 cts 6.46%# 2: 2.08 eV 1.42 eV 7831.42 cts 5.49%# 3: 3.87 eV 1.49 eV 11071.60 cts 7.76%# 4: 5.10 eV 1.24 eV 35609.18 cts 24.95%# 5: 6.31 eV 1.20 eV 22723.83 cts 15.92%# 6: 7.50 eV 1.29 eV 24968.86 cts 17.49%# 7: 8.91 eV 1.43 eV 19514.39 cts 13.67%# 8: 10.45 eV 1.83 eV 11788.54 cts 8.26%18 iterations, chi square = 2.0382

Valence Bands[Xe] 4f66s2

I.E. = 543 kJ/mol

Page 333: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Tin Metal (Z=50) Sn0

[CAS# 7440-31-5]

Detailed Surface Composition Table

Description: Tin (Sn) [Stannum = Sn]Date: Sat Feb 26 1994

Corrected Exper. Sens Norm Relative Signal BE BE Factor Area Area Sn Auger 1129.0 1129.0 0.00 22971 0 Sn Auger 1058.0 1058.0 0.00 20696 0 Sn Auger 1049.6 1049.6 0.00 8567 0 Sn3s 885.2 885.2 2.84 5016 1767 Sn loss 770.2 770.2 0.00 5322 0 Sn3p1 756.7 756.7 4.15 17592 4244 Sn3p3 714.6 714.6 8.56 36352 4248 Sn loss 507.5 507.5 0.00 15247 0 Sn loss 499.0 499.0 0.00 11560 0 Sn3d3 493.7 493.7 8.23 63018 7660 Sn3d5 484.9 484.9 14.27 97628 6841 Sn4s 137.1 137.1 0.81 3017 3713 Sn4p 90.6 90.6 2.75 1117 406 Sn loss 53.0 53.0 0.00 2284 0 Sn loss 38.3 38.3 0.00 8110 0 Sn4d 24.0 24.0 2.81 21074 7505

Page 334: Vol 1 - XPS of Elements & Native Oxides - 1999

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Tin Metal (Z=50) Sn0

[CAS# 7440-31-5]

Ele

ctro

n C

ount

s

Binding Energy (eV)

200000

1400 01120 840 560 280

Sn(

Aug

er)

Sn(

Aug

er)

Sn(

3s)

Sn

loss

S

n(3p

1)

Sn(

3p3)

Sn

loss

S

n lo

ss

Sn(

3d5)

Sn(

4s)

Sn(

4p)

Sn

loss

S

n lo

ss Sn(

4d)

Sn(

3d3)

Sn(

Aug

er)

Wide Scan Survey Spectrum

Page 335: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Tin Metal (Z=50) Sn0

[CAS# 7440-31-5]E

l e c t r o n C

o u n t s

Binding Energy (eV)

21000

510 480504 498 492 486

Baseline: 509.85 to 480.75 eV# 1: 484.91 eV 0.58 eV 278999.31 cts 42.60%# 2: 485.56 eV 1.14 eV 44241.74 cts 6.76%# 3: 486.86 eV 1.34 eV 16323.16 cts 2.49%# 4: 493.33 eV 0.56 eV 186860.50 cts 28.53%# 5: 493.91 eV 1.06 eV 29516.85 cts 4.51%# 6: 495.22 eV 1.14 eV 10908.78 cts 1.67%# 7: 499.13 eV 2.14 eV 60682.32 cts 9.27%# 8: 507.59 eV 1.78 eV 27332.29 cts 4.17%7 iterations, chi square = 3.4409

Cu (2p3) at 932.67 eVAu (4f7) 83.98 eV

Ag FWHM: 0.49 eVG:L Ratio: 70:30

∆E = 8.42 eV

Sn (3d 5/2)BE = 484.91 eV

Sn (3d 3/2)BE = 493.33 eV

Page 336: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Tin Metal (Z=50) Sn0

[CAS# 7440-31-5]E

lect

ron

Cou

nts

Binding Energy (eV)

1400

20 -1014 8 2 -4

Valence Bands[Kr]4d105s25p2

I.E. = 709 kJ/mol

BE = 1.0 eV

BE = 7.2 eVBE = 3.1 eV

Page 337: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Strontium (Z=38) in Strontium Carbonate (FW=147.63) Sr : SrCO3[CAS# 1633-05-2]

Detailed Surface Composition Table

Description: STRONTIUM CARBONATE (SrCO3) 90 DEG TOA PRESSED ONTO INDIUM FOIL (NO MESH)Date: Tue Jan 26 1988

Corrected Exper. Sens Norm Relative Signal BE BE Factor Area Area Atom % O Auger 977.6 972.2 0.00 40471 0 Ba3d3 795.6 790.2 9.31 2498 268 * Ba3d5 780.0 774.6 13.79 2454 178 0.18 O loss 543.7 538.3 0.00 10717 0 * O 1s 531.2 525.8 2.24 128772 57386 58.31 In3d 444.8 439.4 19.10 1878 98 * N 1s 406.9 401.5 1.59 2344 1475 1.50 Sr3s 357.2 351.8 1.74 23880 13756 Sr loss 308.9 303.5 0.00 2013 0 Sr loss 300.6 295.2 0.00 3719 0 * C 1s 288.9 283.5 1.01 21472 21364 21.71 Sr3p1 278.7 273.3 2.28 29070 12776 Sr3p3 268.4 263.0 4.46 73508 16466 Sr loss 164.0 158.6 27.99 8294 296 Sr loss 146.4 141.0 0.00 12940 0 * Sr3d 132.8 127.4 5.85 105320 18010 18.30 Sr loss 50.0 44.6 0.00 3220 0 Sr4s 36.6 31.2 0.37 4987 13623 Sr4p 18.4 13.0 0.99 21451 21675

Page 338: Vol 1 - XPS of Elements & Native Oxides - 1999

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Strontium (Z=38) in Strontium Carbonate (FW=147.63) Sr : SrCO3[CAS# 1633-05-2]

Ele

ctro

n C

ount

s

Binding Energy (eV)

120000

1000 0800 600 400 200

O(A

uger

)

Ba(

3d3)

Ba(

3d5)

O lo

ss

O

(1s)

In(3

d)

N(1

s)

Sr(

3s)

Sr

loss

S

r lo

ss C

(1s) S

r(3p

1)S

r(3p

3)

Sr

loss

S

r lo

ss

Sr(

3d)

Sr

loss

S

r(4s

) Sr(

4p)

Wide Scan Survey SpectrumCharge Neutralizer ON

Page 339: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Strontium (Z=38) in Strontium Carbonate (FW=147.63) Sr : SrCO3[CAS# 1633-05-2]

Ele

ctro

n C

ount

s

Binding Energy (eV)

2000

140 120136 132 128 124

Baseline: 133.73 to 125.41 eV# 1: 128.31 eV 1.65 eV 40155.05 cts 59.29%# 2: 130.10 eV 1.66 eV 27571.96 cts 40.71%5 iterations, chi square = 1.0636

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.70 eVG:L Ratio: 80:20

∆E = 1.79 eVCharge Shift = 5.34 eV

Sr (3d 5/2)BE = 133.6 eV

Sr (3d 3/2)BE = 135.4 eV

Page 340: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Strontium (Z=38) in Strontium Carbonate (FW=147.63) Sr : SrCO3[CAS# 1633-05-2]

E

l e c t r o n C

o u n t s

Binding Energy (eV)

2000

290 270286 282 278 274

Baseline: 287.57 to 277.37 eV# 1: 279.66 eV 1.34 eV 16236.92 cts 32.21%# 2: 280.62 eV 1.40 eV 4683.05 cts 9.29%# 3: 283.39 eV 1.31 eV 3715.04 cts 7.37%# 4: 284.40 eV 1.36 eV 25771.87 cts 51.13%4 iterations, chi square = 1.9899

C (1s)BE (HC) = 285.0 eV

Charge Shift = 5.34 eV

C-C, C-RBE = 285.0- eV

CO3

BE = 289.7 eV

Page 341: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Tantalum Metal (Z=73) Ta0

[CAS# 7440-25-7]

Detailed Surface Composition Table

Description: Tantalum (Ta)Date: Sat Feb 19 1994

Corrected Exper. Sens Norm Relative Signal BE BE Factor Area Area Ta Auger 1318.0 1318.0 1.21 3474 2871 Ta4s 562.8 562.8 1.70 8221 4841 O 1s 531.1 531.1 2.80 1079 385 Ta4p1 462.5 462.5 2.01 8831 4384 Ta loss 420.4 420.4 0.00 1340 0 Ta4p3 400.6 400.6 4.92 27978 5688 Ta4d3 237.6 237.6 6.45 29801 4621 Ta4d5 226.1 226.1 9.33 38618 4139 Ta5s 67.8 67.8 0.38 1186 3160 Ta loss 42.7 42.7 0.00 9784 0 Ta5p3 32.6 32.6 0.78 4797 6124 Ta4f 21.7 21.7 8.97 51889 5786

Page 342: Vol 1 - XPS of Elements & Native Oxides - 1999

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Tantalum Metal (Z=73) Ta0

[CAS# 7440-25-7]E

lect

ron

Cou

nts

Binding Energy (eV)

46000

1400 01120 840 560 280

Ta

(Aug

er)

Ta(

4s)

O(1

s) Ta(

4p1)

Ta

loss

T

a(4p

3)

Ta(

4d3)

Ta(

4d5)

Ta(

5s) Ta

loss

T

a(5p

3)T

a(4f

)

Ta

(Aug

er)

Wide Scan Survey Spectrum

Page 343: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Tantalum Metal (Z=73) Ta0

[CAS# 7440-25-7]E

l e c t r o n C

o u n t s

Binding Energy (eV)

10000

38 1834 30 26 22

Baseline: 29.15 to 19.45 eV# 1: 21.64 eV 0.45 eV 90489.53 cts 31.70%# 2: 22.12 eV 0.49 eV 36988.25 cts 12.96%# 3: 22.67 eV 0.59 eV 21836.58 cts 7.65%# 4: 23.54 eV 0.48 eV 67955.13 cts 23.81%# 5: 23.95 eV 0.61 eV 27881.76 cts 9.77%# 6: 24.33 eV 0.75 eV 16368.57 cts 5.73%# 7: 24.71 eV 1.03 eV 10772.85 cts 3.77%# 8: 25.31 eV 1.64 eV 13172.55 cts 4.61%3 iterations, chi square = 2.8380

Cu (2p3) at 932.67 eVAu (4f7) 83.98 eV

Ag FWHM: 0.49 eVG:L Ratio: 90:10

∆E = 1.90 eV

Ta (4f 7/2)BE = 21.64 eV

Ta (4f 5/2)BE = 23.54 eV

Page 344: Vol 1 - XPS of Elements & Native Oxides - 1999

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Tantalum Metal (Z=73) Ta0

[CAS# 7440-25-7]E

lect

ron

Cou

nts

Binding Energy (eV)

8500

20 -1014 8 2 -4

Valence Bands[Xe] 4f145d36s2

I.E. = 761 kJ/mol

BE = 0.7 eV

BE = 2.9 eV

Page 345: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Terbium Metal (Z=65) Tb0

[CAS# 7440-27-9]

Detailed Surface Composition Table

Description: Terbium (Tb)Date: Tue Mar 15 1994

Corrected Exper. Sens Norm Relative Signal BE BE Factor Area Area Tb3p3 1373.3 1373.3 30.81 8462 275 Tb3d3 1275.7 1275.7 34.90 57395 1645 Tb3d5 1242.1 1242.1 35.94 46480 1293 Tb Auger 808.9 808.9 0.00 3513 0 Tb Auger 700.3 700.3 0.00 13882 0 Tb Auger 557.1 557.1 0.00 7407 0 O 1s 530.6 530.6 2.80 5979 2135 Tb Auger 411.0 411.0 0.00 2590 0 Tb4s 395.6 395.6 1.51 1777 1176 Tb Auger 284.0 284.0 1.00 14833 14831 Tb Auger 261.5 261.5 0.00 3408 0 Ar2p 243.3 243.3 3.06 1125 368 Tb Auger 232.9 232.9 0.00 3905 0 Tb loss 175.9 175.9 0.00 4811 0 Tb4d 148.6 148.6 11.11 15141 1363 Tb5p 21.8 21.8 0.84 2978 3560 Tb4f 7.1 7.1 2.05 9578 4671

Page 346: Vol 1 - XPS of Elements & Native Oxides - 1999

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Terbium Metal (Z=65) Tb0

[CAS# 7440-27-9]E

lect

ron

Cou

nts

Binding Energy (eV)

40000

1400 01120 840 560 280

Tb

(3p3

)

Tb

(3d3

)

Tb(

3d5)

Tb

(Aug

er)

O(1

s)

Tb

(Aug

er)

Tb(

4s)

Tb

(Aug

er)

Tb

(Aug

er)

Ar(

2p)

Tb

(Aug

er)

Tb

loss

T

b(4d

)

Tb

(5p3

)

Tb(

4f)

Tb

(Aug

er)

Tb

(Aug

er)

Tb(

5s)

Tb

(5p1

)

Wide Scan Survey Spectrum

Page 347: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Terbium Metal (Z=65) Tb0

[CAS# 7440-27-9]E

l e c t r o n C

o u n t s

Binding Energy (eV)

30000

200 130186 172 158 144

Baseline: 158.20 to 143.50 eV# 1: 145.95 eV 1.16 eV 231140.44 cts 24.12%# 2: 147.60 eV 1.59 eV 54773.29 cts 5.72%# 3: 148.61 eV 1.28 eV 222920.14 cts 23.26%# 4: 150.55 eV 1.31 eV 27320.94 cts 2.85%# 5: 150.06 eV 1.30 eV 154189.80 cts 16.09%# 6: 151.29 eV 1.30 eV 60659.60 cts 6.33%# 7: 152.32 eV 1.30 eV 59132.60 cts 6.17%# 8: 153.91 eV 1.32 eV 95864.79 cts 10.00%# 9: 154.65 eV 1.30 eV 13966.19 cts 1.46%#10: 155.59 eV 1.55 eV 38418.75 cts 4.01%10 iterations, chi square = 4.4796

Cu (2p3) at 932.67 eVAu (4f7) 83.98 eV

Ag FWHM: 0.49 eVG:L Ratio: 80:20

∆E = 2.66 eV

Tb (4d 5/2)BE = 145.95 eV

Tb (4d 3/2)BE = 148.61 eV

Page 348: Vol 1 - XPS of Elements & Native Oxides - 1999

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Terbium Metal (Z=65) Tb0

[CAS# 7440-27-9]E

l e c t r o n C

o u n t s

Binding Energy (eV)

13000

25 -519 13 7 1

Baseline: 14.15 to -0.90 eV# 1: 0.37 eV 0.76 eV 21077.22 cts 2.92%# 2: 1.04 eV 0.69 eV 13918.58 cts 1.93%# 3: 2.30 eV 0.90 eV 85904.84 cts 11.90%# 4: 3.32 eV 0.99 eV 10939.12 cts 1.52%# 5: 7.43 eV 1.17 eV 272860.13 cts 37.81%# 6: 9.23 eV 1.02 eV 179899.41 cts 24.93%# 7: 10.33 eV 0.95 eV 100063.21 cts 13.87%# 8: 11.31 eV 1.33 eV 36959.46 cts 5.12%3 iterations, chi square = 3.1118

Valence Bands[Xe] 4f96s2

I.E. = 565 kJ/mol

Tb (4f 7/2)BE = 7.43 eVTb (4f 5/2)

BE = 9.23 eV

Page 349: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Tellurium Metal (Z=52) Te0

[CAS# 13494-80-9]

Detailed Surface Composition Table

Description: Tellurium (Te)Date: Sun Feb 13 1994

Corrected Exper. Sens Norm Relative Signal BE BE Factor Area Area Te Auger 1131.8 1131.8 0.00 4030 0 Te Auger 1092.5 1092.5 0.00 60810 0 Te Auger 1020.3 1020.3 0.00 4901 0 Te Auger 1004.8 1004.8 0.00 58876 0 Te Auger 994.6 994.6 0.00 18285 0 Te Auger 959.9 959.9 0.00 3308 0 Te3s 949.7 949.7 2.94 1545 525 Te loss 888.4 888.4 0.00 3188 0 Te3p1 870.7 870.7 4.30 23498 5459 Te loss 836.5 836.5 0.00 10274 0 Te3p3 819.7 819.7 9.08 51085 5629 Te loss 600.7 600.7 0.00 16201 0 Te3d3 583.2 583.2 11.82 80978 6848 Te3d5 572.9 572.9 17.10 138764 8115 Ar2p 241.7 241.7 3.06 315 103 Te4s 169.1 169.1 0.92 4651 5057 Te4p 112.6 112.6 3.19 2120 664 Te loss 58.3 58.3 0.00 9290 154742 Te4d 40.1 40.1 3.77 29855 7925

Page 350: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Tellurium Metal (Z=52) Te0

[CAS# 13494-80-9]E

lect

ron

Cou

nts

Binding Energy (eV)

1.E6

1400 01120 840 560 280

Te

(Aug

er)

Te

(Aug

er)

Te

(Aug

er)

Te

(Aug

er)

Te

a

T

e(3s

)

Te

loss

T

e(3p

1)

Te

loss

Te(

3p3)

Te

loss

T

e(3d

3)T

e(3d

5)

Ar(

2p)

Te(

4s)

Te(

4p)

Te

loss

T

e(4d

)

Te

Aug

er

Te

Aug

er

Wide Scan Survey Spectrum

Page 351: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Tellurium Metal (Z=52) Te0

[CAS# 13494-80-9]E

l e c t r o n C

o u n t s

Binding Energy (eV)

26000

595 565589 583 577 571

Baseline: 594.75 to 568.30 eV# 1: 572.90 eV 0.76 eV 448564.22 cts 52.44%# 2: 575.14 eV 1.30 eV 7151.03 cts 0.84%# 3: 583.29 eV 0.75 eV 308344.47 cts 36.05%# 4: 585.63 eV 1.30 eV 6078.93 cts 0.71%# 5: 588.01 eV 3.63 eV 28373.85 cts 3.32%# 6: 590.55 eV 3.33 eV 56921.48 cts 6.65%3 iterations, chi square = 3.0931

Cu (2p3) at 932.67 eVAu (4f7) 83.98 eV

Ag FWHM: 0.49 eVG:L Ratio: 70:30

∆E = 10.39 eV

Te (3d 5/2)BE = 572.90 eV

Te (3d 3/2)BE = 583.29 eV

Page 352: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Tellurium Metal (Z=52) Te0

[CAS# 13494-80-9]E

lect

ron

Cou

nts

Binding Energy (eV)

3600

20 -1014 8 2 -4

Valence Bands[Kr] 4d105s25p4

I.E. = 869 kJ/mol

BE = 1.6 eV

BE = 3.6 eV

BE = 4.6 eV

BE = 11.0 eVBE = 12.4 eV

Page 353: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Titanium Metal (Z=21) Ti0

[CAS# 7440-32-6]

Detailed Surface Composition Table

Description: Titanium (Ti)Date: Mon Feb 7 1994

Corrected Exper. Sens Norm Relative Signal BE BE Factor Area Area Ti Auger 1102.8 1102.8 0.00 8902 0 Ti Auger 1067.7 1067.7 0.00 18041 0 Ti Auger 1034.9 1034.9 0.39 1666 4284 O Auger 973.4 973.4 0.00 1969 0 Ti2s 560.9 560.9 3.08 20786 6760 O 1s 531.2 531.2 2.80 2711 968 Ti loss 474.1 474.1 0.00 24108 0 Ti2p1 460.0 460.0 2.61 22654 8692 Ti2p 454.0 454.0 7.68 48939 6376 N 1s 396.7 396.7 1.76 339 192 Ar2s 320.8 320.8 1.96 1682 859 C 1s 281.6 281.6 1.00 663 663 Ar2p 243.1 243.1 3.06 3079 1006 Ti3s 58.2 58.2 0.49 4464 9118 Ti3p 32.4 32.4 0.84 11180 13238

Page 354: Vol 1 - XPS of Elements & Native Oxides - 1999

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Titanium Metal (Z=21) Ti0

[CAS# 7440-32-6]

Ele

ctro

n C

ount

s

Binding Energy (eV)

34000

1400 01120 840 560 280

Ti(A

uger

)

Ti(A

uger

)

Ti(A

uger

)

O(A

uger

)

Ti(2

s)O

(1s)

Ti l

oss

T

i(2p1

)T

i(2p)

N(1

s)

Ar(

2s)

C(1

s)

Ar(

2p)

Ti(3

s) Ti(3

p)

Wide Scan Survey Spectrum

Page 355: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Titanium Metal (Z=21) Ti0

[CAS# 7440-32-6]E

l e c t r o n C

o u n t s

Binding Energy (eV)

5200

468 448464 460 456 452

Baseline: 465.00 to 451.50 eV# 1: 453.86 eV 0.53 eV 56632.37 cts 42.48%# 2: 454.39 eV 0.58 eV 21321.39 cts 15.99%# 3: 454.99 eV 0.54 eV 7524.17 cts 5.64%# 4: 455.53 eV 0.50 eV 3336.69 cts 2.50%# 5: 459.98 eV 0.86 eV 28329.27 cts 21.25%# 6: 460.52 eV 1.01 eV 10733.07 cts 8.05%# 7: 461.38 eV 1.02 eV 3767.38 cts 2.83%# 8: 462.63 eV 1.13 eV 1657.43 cts 1.24%10 iterations, chi square = 3.1030

Cu (2p3) at 932.67 eVAu (4f7) 83.98 eV

Ag FWHM: 0.49 eVG:L Ratio: 70:30

∆E = 6.12 eV

Ti (2p 3/2)BE = 453.86 eV

Ti (2p 1/2)BE = 459.98 eV

Page 356: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Titanium Metal (Z=21) Ti0

[CAS# 7440-32-6]E

lect

ron

Cou

nts

Binding Energy (eV)

3000

15 -1010 5 0 -5

Valence Bands[Ar] 3d24s2

I.E. = 658 kJ/mol

BE = 0.7 eV

BE = 10.5 eV

BE = 1.8 eV

Page 357: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Thallium Metal (Z=81) Tl0

[CAS# 7440-28-0]

Detailed Surface Composition Table

Description: Thallium (Tl)Date: Wed Mar 2 1994

Corrected Exper. Sens Norm Relative Signal BE BE Factor Area Area Tl Auger 1245.9 1245.9 0.00 9725 0 Tl4s 846.7 846.7 0.94 7150 7571 Tl4p1 721.5 721.5 1.95 2798 1438 Tl4p3 609.6 609.6 5.81 24345 4189 O 1s 528.4 528.4 2.80 1301 465 Tl4d3 405.5 405.5 8.42 42834 5088 Tl4d5 384.9 384.9 12.38 71704 5791 C 1s 284.9 284.9 1.00 1886 1886 Tl loss 128.3 128.3 0.00 16190 0 Tl4f 117.6 117.6 21.31 172897 8114 Tl5p1 94.6 94.6 0.52 2512 4830 Tl5p3 73.1 73.1 1.29 8198 6349 Tl5d 12.1 12.1 2.48 25057 10102

Page 358: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Thallium Metal (Z=81) Tl0

[CAS# 7440-28-0]E

lect

ron

Cou

nts

Binding Energy (eV)

78000

1400 01120 840 560 280

Tl(4

p1) Tl(4

p3)

O(1

s)

Tl(4

d3)

Tl(4

d5)

C(1

s)

Tl l

oss

T

l(4f)

Tl(5

p1)

Tl(5

p3) T

l(5d)

Tl (

auge

r)

Tl(4

s)

Wide Scan Survey Spectrum

Page 359: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Thallium Metal (Z=81) Tl0

[CAS# 7440-28-0]E

lect

ron

Cou

nts

Binding Energy (eV)

20000

130 110126 122 118 114

Baseline: 126.25 to 114.90 eV# 1: 117.68 eV 0.52 eV 227140.11 cts 41.07%# 2: 118.22 eV 0.79 eV 62570.91 cts 11.31%# 3: 119.13 eV 0.79 eV 15551.67 cts 2.81%# 4: 120.15 eV 1.03 eV 9633.10 cts 1.74%# 5: 122.12 eV 0.53 eV 171572.91 cts 31.02%# 6: 122.60 eV 0.75 eV 47656.46 cts 8.62%# 7: 123.31 eV 0.72 eV 11731.53 cts 2.12%# 8: 124.10 eV 0.92 eV 7230.28 cts 1.31%

Cu (2p3) at 932.67 eVAu (4f7) 83.98 eV

Ag FWHM: 0.49 eVG:L Ratio: 80:20

∆E = 4.44 eV

Tl (4f 7/2)BE = 117.68 eV

Tl (4f 5/2)BE = 122.12 eV

Page 360: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Thallium Metal (Z=81) Tl0

[CAS# 7440-28-0]E

lect

ron

Cou

nts

Binding Energy (eV)

1500

10 -106 2 -2 -6

Valence Bands[Xe] 4f145d106s26p1

I.E. = 589 kJ/mol

BE = 4.5 eV

BE = 0.7 eV

Page 361: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Thulmium Metal (Z=69) Tm0

[CAS# 7440-30-4]

Detailed Surface Composition Table

Description: Thulmium (Tm)Date: Sat Mar 19 1994

Corrected Exper. Sens Norm Relative Signal BE BE Factor Area Area Tm Auger 1367.1 1367.1 0.00 46025 0 Tm Auger 677.9 677.9 0.00 5667 0 Tm Auger 586.9 586.9 0.00 4866 0 O 1s 530.7 530.7 2.80 1814 648 Tm4s 468.5 468.5 1.62 7949 4921 Tm Auger 399.9 399.9 0.00 76483 0 Tm4p3 332.3 332.3 4.44 20438 4599 Tm loss 217.8 217.8 0.00 19467 0 Tm Auger 189.2 189.2 0.00 6556 0 Tm4d 175.3 175.3 13.35 14975 1122 Tm5s 52.0 52.0 0.31 1668 5314 Tm5p 39.5 39.5 0.90 9395 10478 Tm4f 9.9 9.9 4.83 19495 4032

Page 362: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Thulmium Metal (Z=69) Tm0

[CAS# 7440-30-4]E

lect

ron

Cou

nts

Binding Energy (eV)

20000

1400 01120 840 560 280

O(1

s) Tm

(4s)

Tm

(4p3

)

Tm

(A

uger

)T

m(4

d)

Tm

(5s) Tm

loss

T

m(4

f)

Tm

(A

uger

)

Tm

(A

uger

)

Tm

(A

uger

)

Tm

loss

Tm

(A

uger

)

Tm

(5p

1)

Tm

(5p

3)

Wide Scan Survey Spectrum

Page 363: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Thulmium Metal (Z=69) Tm0

[CAS# 7440-30-4]E

l e c t r o n C

o u n t s

Binding Energy (eV)

19000

210 160200 190 180 170

Baseline: 181.35 to 174.05 eV# 1: 175.28 eV 1.06 eV 233703.77 cts 54.65%# 2: 176.20 eV 1.50 eV 117651.38 cts 27.51%# 3: 178.58 eV 1.70 eV 46640.63 cts 10.91%# 4: 179.32 eV 2.10 eV 29629.48 cts 6.93%3 iterations, chi square = 3.3347

Cu (2p3) at 932.67 eVAu (4f7) 83.98 eV

Ag FWHM: 0.49 eVG:L Ratio: 80:20

∆E = 0.92 eV ?

Tm (4d 5/2)BE = 175.28 eV

Tm (4d 3/2) ?BE = 176.20 eV

Page 364: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Thulmium Metal (Z=69) Tm0

[CAS# 7440-30-4]E

l e c t r o n C

o u n t s

Binding Energy (eV)

20000

25 -519 13 7 1

Baseline: 15.25 to 3.40 eV# 1: 4.72 eV 0.71 eV 208633.03 cts 15.91%# 2: 5.56 eV 0.81 eV 123386.96 cts 9.41%# 3: 6.33 eV 0.89 eV 131954.27 cts 10.07%# 4: 7.33 eV 0.84 eV 116100.15 cts 8.86%# 5: 8.47 eV 0.92 eV 288188.84 cts 21.98%# 6: 9.33 eV 0.73 eV 73224.45 cts 5.59%# 7: 10.39 eV 0.95 eV 273472.16 cts 20.86%# 8: 11.29 eV 0.85 eV 47057.19 cts 3.59%# 9: 12.22 eV 1.39 eV 48934.09 cts 3.73%4 iterations, chi square = 2.4983

Valence Bands[Xe] 4f136s2

I.E. = 597 kJ/mol

Tm (4f 7/2)BE = 8.47 eV

Tm (4f 5/2)BE = 10.39 eV

Page 365: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Vanadium Metal (Z=23) V0

[CAS# 7440-62-2]

Detailed Surface Composition Table

Description: Vanadium (V)Date: Mon Feb 21 1994

Corrected Exper. Sens Norm Relative Signal BE BE Factor Area Area V Auger 1055.3 1055.3 0.00 1657 0 V Auger 1014.7 1014.7 0.00 11784 0 V Auger 976.8 976.8 0.20 2884 14373 V 2s 626.4 626.4 2.43 11196 4608 V 2p1 519.9 519.9 2.56 15374 6003 V 2p3 512.3 512.3 5.01 33134 6617 N 1s 397.2 397.2 1.60 340 212 Ar2s 320.4 320.4 1.90 805 423 C 1s 281.8 281.8 1.00 270 269 Ar2p 242.6 242.6 3.16 1575 498 V 3s 65.7 65.7 0.65 2996 4594 V 3p 36.7 36.7 1.24 6671 5398

Page 366: Vol 1 - XPS of Elements & Native Oxides - 1999

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Vanadium Metal (Z=23) V0

[CAS# 7440-62-2]E

lect

ron

Cou

nts

Binding Energy (eV)

52000

1400 01120 840 560 280

V(A

uger

)

V(A

uger

)

V(A

uger

)

V(2

s)

V(2

p1)

V(2

p3

N(1

s)

Ar(

2s)

C(1

s)

Ar(

2p)

V(3

s) V(3

p)

Wide Scan Survey Spectrum

Page 367: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Vanadium Metal (Z=23) V0

[CAS# 7440-62-2]E

l e c t r o n C

o u n t s

Binding Energy (eV)

10000

530 510526 522 518 514

Baseline: 525.55 to 510.00 eV# 1: 512.10 eV 0.62 eV 124984.59 cts 42.52%# 2: 512.81 eV 1.03 eV 47664.89 cts 16.22%# 3: 513.76 eV 0.94 eV 15216.94 cts 5.18%# 4: 514.73 eV 1.27 eV 8324.79 cts 2.83%# 5: 519.69 eV 1.07 eV 62277.19 cts 21.19%# 6: 520.52 eV 1.45 eV 23664.31 cts 8.05%# 7: 522.05 eV 1.61 eV 7619.26 cts 2.59%# 8: 523.97 eV 2.29 eV 4184.96 cts 1.42%8 iterations, chi square = 3.4456

Cu (2p3) at 932.67 eVAu (4f7) 83.98 eV

Ag FWHM: 0.49 eVG:L Ratio: 70:30

∆E = 7.59 eV

V (2p 3/2)BE = 512.10 eV

V (2p 1/2)BE = 519.69 eV

Page 368: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Vanadium Metal (Z=23) V0

[CAS# 7440-62-2]E

lect

ron

Cou

nts

Binding Energy (eV)

1800

15 -1010 5 0 -5

Valence Bands[Ar] 3d34s2

I.E. = 650 kJ/mol

BE = 0.8 eV

BE = 2.2 eV

BE = 10.4 eV

Page 369: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Tungsten Metal (Z=74) W0

[CAS# 7440-33-7]

Detailed Surface Composition Table

Description: Tungsten (W) [Wolfram = W]Date: Mon Mar 7 1994

Corrected Exper. Sens Norm Relative Signal BE BE Factor Area Area W 4s 593.6 593.6 1.71 3892 2282 O 1s 530.5 530.5 2.80 987 353 W 4p1 490.5 490.5 2.02 6134 3033 W 4p3 423.3 423.3 5.03 20863 4144 W loss 267.7 267.7 0.00 2694 0 W 4d3 255.6 255.6 6.71 23282 3469 W 4d5 243.1 243.1 9.72 37715 3882 W 5s 75.1 75.1 0.40 1863 4710 W loss 58.1 58.1 0.00 5514 0 W 5p1 46.8 46.8 0.38 2072 5446 W 4f 30.9 30.9 10.18 64801 6366 W 5d 2.8 2.8 0.55 3701 6693

Page 370: Vol 1 - XPS of Elements & Native Oxides - 1999

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Tungsten Metal (Z=74) W0

[CAS# 7440-33-7]E

lect

ron

Cou

nts

Binding Energy (eV)

48000

1400 01120 840 560 280W

(4s)

O(1

s)

W(4

p1) W(4

p3)

W lo

ss

W

(4d3

)W

(4d5

)

W(5

s)W

(5p1

)W

(4f)

W(5

d)

W lo

ss

W (

Aug

er)

W (

Aug

er)

Wide Scan Survey Spectrum

Page 371: Vol 1 - XPS of Elements & Native Oxides - 1999

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Tungsten Metal (Z=74) W0

[CAS# 7440-33-7]E

l e c t r o n C

o u n t s

Binding Energy (eV)

20000

45 2541 37 33 29

Baseline: 39.80 to 29.20 eV# 1: 31.29 eV 0.44 eV 168558.91 cts 41.82%# 2: 31.78 eV 0.83 eV 31842.30 cts 7.90%# 3: 32.78 eV 0.90 eV 9936.00 cts 2.47%# 4: 33.45 eV 0.47 eV 126935.69 cts 31.49%# 5: 33.94 eV 0.74 eV 23753.60 cts 5.89%# 6: 34.94 eV 0.91 eV 7423.10 cts 1.84%# 7: 36.76 eV 2.09 eV 34608.73 cts 8.59%

Cu (2p3) at 932.67 eVAu (4f7) 83.98 eV

Ag FWHM: 0.49 eVG:L Ratio: 90:10

∆E = 2.16 eV

W (4f 7/2)BE = 31.29 eV

W (4f 5/2)BE = 33.45 eV

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Tungsten Metal (Z=74) W0

[CAS# 7440-33-7]E

lect

ron

Cou

nts

Binding Energy (eV)

6000

15 -511 7 3 -1

Valence Bands[Xe] 4f145d46s2

I.E. = 770 kJ/mol

BE = 0.25 eV

BE = 4.7 eV

BE = 3.1 eV BE = 2.0 eV

Page 373: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Xenon (Z=54) Implanted Ions Xeo in C

Detailed Surface Composition Table

Description: Xenon (Xe)implanted in carbon (4 KV, 2 min)Date: Wed Apr 17 1991

Corrected Exper. Sens Norm Relative Signal BE BE Factor Area Area Xe Auger 954.8 954.8 0.00 3132 0 Xe Auger 942.3 942.3 0.00 993 0 Xe3p3 933.5 933.5 0.00 2273 0 Xe3d3 682.2 682.2 9.33 10781 1156 Xe3d5 669.4 669.4 13.71 16332 1191 O 1s 532.5 532.5 2.22 3108 1399 N 1s 399.2 399.2 1.60 1478 926 C 1s 284.2 284.2 1.00 101589 101545 Cl2s 269.4 269.4 1.72 386 225 Xe4s 207.2 207.2 0.00 600 546 Cl2p 200.4 200.4 2.48 483 195 Xe4p 138.2 138.2 4.11 1979 482 Xe4d 60.1 60.1 5.75 7315 1273

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Xenon (Z=54) Implanted Ions Xeo in C

Wide Scan Survey Spectrum

Page 375: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Xenon (Z=54) Implanted Ions Xeo in C

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.55 eVG:L Ratio: 70:30

∆E = 12.62 eVXe (3d 5/2)

BE = 669.37 eV

Xe (3d 3/2)BE = 681.99 eV

Page 376: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Yttrium Metal (Z=39) Y0

[CAS# 7440-65-5]

Detailed Surface Composition Table

Description: Yttrium (Y)Date: Wed Mar 2 1994

Corrected Exper. Sens Norm Relative Signal BE BE Factor Area Area O Auger 975.4 975.4 0.00 1064 0 O 1s 531.0 531.0 2.80 3894 1391 Y 3s 393.8 393.8 1.94 12038 6197 Ar2s 322.4 322.4 1.96 2720 1389 Y 3p1 311.1 311.1 2.43 26179 10777 Y 3p3 299.2 299.2 4.74 35906 7578 Ar2p 244.0 244.0 3.06 2928 957 Y loss 168.8 168.8 0.00 11985 0 Y 3d 155.7 155.7 6.10 60479 9915 Y loss 58.9 58.9 0.06 646 10761 Y 4s 44.4 44.4 0.34 1890 5539 Y loss 35.3 35.3 0.00 994 0 Y 4p 23.3 23.3 0.09 12200 128894

Page 377: Vol 1 - XPS of Elements & Native Oxides - 1999

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Yttrium Metal (Z=39) Y0

[CAS# 7440-65-5]E

lect

ron

Cou

nts

Binding Energy (eV)

50000

1400 01120 840 560 280

O(A

uger

)

O(1

s)

Y(3

s)

Ar(

2s)

Y(3

p1)

Y(3

p3)

Ar(

2p)

Y lo

ss

Y

(3d)

Y lo

ss

Y

(4s)

Y lo

ss

Y(4

p)

Wide Scan Survey Spectrum

Page 378: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Yttrium Metal (Z=39) Y0

[CAS# 7440-65-5]E

l e c t r o n C

o u n t s

Binding Energy (eV)

15000

170 150166 162 158 154

Baseline: 161.25 to 154.00 eV# 1: 155.86 eV 0.50 eV 144478.58 cts 40.41%# 2: 156.41 eV 0.50 eV 37876.82 cts 10.59%# 3: 156.97 eV 0.55 eV 15564.61 cts 4.35%# 4: 157.93 eV 0.60 eV 109785.40 cts 30.70%# 5: 158.56 eV 0.60 eV 31094.96 cts 8.70%# 6: 159.21 eV 0.65 eV 11437.34 cts 3.20%# 7: 159.88 eV 0.62 eV 3871.87 cts 1.08%# 8: 160.49 eV 0.63 eV 3465.45 cts 0.97%3 iterations, chi square = 3.0078

Cu (2p3) at 932.67 eVAu (4f7) 83.98 eV

Ag FWHM: 0.49 eVG:L Ratio: 80:20

∆E = 2.07 eV

Y (2p 3/2)BE = 155.86 eV

Y (2p 1/2)BE = 157.93 eV

Page 379: Vol 1 - XPS of Elements & Native Oxides - 1999

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Yttrium Metal (Z=39) Y0

[CAS# 7440-65-5]E

lect

ron

Cou

nts

Binding Energy (eV)

2200

15 -1010 5 0 -5

Valence Bands[Kr] 4d105s1

I.E. = 731 kJ/mol

BE = 0.5 eV

BE = 11.3 eV BE = 6.3 eV

Page 380: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Ytterbium Metal (Z=70) Yb0

[CAS# 7440-64-4]

Detailed Surface Composition Table

Description: Ytterbium (Yb)Date: Wed Mar 23 1994

Corrected Exper. Sens Norm Relative Signal BE BE Factor Area Area Yb Auger 1335.6 1335.6 0.00 44154 0 Yb Auger 1186.4 1186.4 0.00 2935 0 O Auger 976.8 976.8 0.00 2560 0 O 1s 530.9 530.9 2.80 3707 1325 Yb4s 480.8 480.8 1.64 2759 1682 Yb4p1 390.8 390.8 1.96 16915 8615 Yb4p3 340.4 340.4 4.56 43624 9574 Yb4d 191.2 191.2 0.00 115286 0 Yb5s 52.3 52.3 0.32 753 2360 Yb5p 23.5 23.5 0.91 4294 4713 Yb4f 1.4 1.4 5.82 10500 1804

Page 381: Vol 1 - XPS of Elements & Native Oxides - 1999

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Ytterbium Metal (Z=70) Yb0

[CAS# 7440-64-4]E

lect

ron

Cou

nts

Binding Energy (eV)

25000

1400 01120 840 560 280

O(A

uger

)

O(1

s)

Yb(

4s)

Yb(

5s)

Yb

Aug

er

Yb

Aug

er

Yb(

4s)

Yb(

4p1)

Yb(

4p3)

Yb

(4d)

Yb(

4f)

Yb

(5p1

)

Yb

(5p3

)

Wide Scan Survey Spectrum

Page 382: Vol 1 - XPS of Elements & Native Oxides - 1999

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Ytterbium Metal (Z=70) Yb0

[CAS# 7440-64-4]E

l e c t r o n C

o u n t s

Binding Energy (eV)

10000

230 150214 198 182 166

Baseline: 219.30 to 170.30 eV# 1: 177.94 eV 5.19 eV 33416.78 cts 2.85%# 2: 182.36 eV 3.91 eV 295827.69 cts 25.19%# 3: 186.86 eV 4.20 eV 170244.36 cts 14.50%# 4: 191.22 eV 3.96 eV 309733.06 cts 26.37%# 5: 195.27 eV 4.17 eV 153249.23 cts 13.05%# 6: 199.29 eV 4.10 eV 110474.70 cts 9.41%# 7: 202.83 eV 3.89 eV 58822.14 cts 5.01%# 8: 207.15 eV 5.22 eV 42648.03 cts 3.63%4 iterations, chi square = 2.4178

Cu (2p3) at 932.67 eVAu (4f7) 83.98 eV

Ag FWHM: 0.49 eVG:L Ratio: 70:30

∆E = 8.86 eVYb (4d 5/2)BE = 182.36 eV

Yb (4d 3/2)BE = 191.22 eV

Page 383: Vol 1 - XPS of Elements & Native Oxides - 1999

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Ytterbium Metal (Z=70) Yb0

[CAS# 7440-64-4]E

l e c t r o n C

o u n t s

Binding Energy (eV)

20000

25 -519 13 7 1

Baseline: 4.65 to -2.10 eV# 1: 1.24 eV 0.70 eV 300345.75 cts 52.09%# 2: 2.45 eV 0.74 eV 227073.17 cts 39.38%# 3: 3.03 eV 0.95 eV 49171.91 cts 8.53%3 iterations, chi square = 5.0641

Valence Bands[Xe] 4f146s2

I.E. = 603 kJ/mol

Yb (4f 7/2)BE = 1.24 eVYb (4f 5/2)

BE = 2.45 eV

BE = 23.8 eV

Page 384: Vol 1 - XPS of Elements & Native Oxides - 1999

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Zinc Metal (Z=30) Zn0

[CAS# 7440-66-6]

Detailed Surface Composition Table

Description: Zinc (Zn)Date: Sun Mar 6 1994

Corrected Exper. Sens Norm Relative Signal BE BE Factor Area Area Zn2s 1196.4 1196.4 4.33 5438 1254 Zn loss 1055.5 1055.5 0.00 3411 0 Zn2p1 1044.9 1044.9 8.02 27604 3441 Zn loss 1031.0 1031.0 0.00 11336 0 Zn2p3 1021.8 1021.8 15.65 59324 3791 Zn Auger 659.4 659.4 0.97 3279 3398 Zn Auger 652.2 652.2 0.97 3777 3907 Zn Auger 581.8 581.8 0.00 11260 0 Zn Auger 573.0 573.0 0.00 6917 0 Zn Auger 558.5 558.5 0.00 4591 0 Zn Auger 494.6 494.6 0.00 46236 0 Zn Auger 471.5 471.5 0.00 17886 0 Ar2s 320.2 320.2 1.96 623 318 Ar2p 242.1 242.1 3.06 833 272 Zn loss 152.0 152.0 1.06 1713 1616 Zn3s 139.5 139.5 1.06 10368 9745 Zn loss 102.9 102.9 0.00 4700 0 Zn3p 88.3 88.3 2.91 27418 9406 Zn loss 20.2 20.2 0.00 2816 0 Zn3d 9.7 9.7 0.84 11490 13613

Page 385: Vol 1 - XPS of Elements & Native Oxides - 1999

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Zinc Metal (Z=30) Zn0

[CAS# 7440-66-6]E

lect

ron

Cou

nts

Binding Energy (eV)

53000

1400 01120 840 560 280

Zn(

2s) Zn

loss

Z

n(2p

1)Z

n lo

ss

Zn(

2p3)

Zn(

Aug

er)

Zn(

Aug

er)

Zn(

Aug

er)

Zn(

Aug

er)

Zn(

Aug

er)

Zn(

Aug

er)

Zn(

Aug

er)

Ar(

2s)

Ar(

2p)

Zn

loss

Z

n(3s

)

Zn

loss

Z

n(3p

)

Zn

loss

Z

n(3d

)

Wide Scan Survey Spectrum

Page 386: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Zinc Metal (Z=30) Zn0

[CAS# 7440-66-6]E

l e c t r o n C

o u n t s

Binding Energy (eV)

20000

1070 10101058 1046 1034 1022

Baseline: 1065.85 to 1015.40 eV# 1: 1021.75 eV 0.93 eV 431487.63 cts 47.11%# 2: 1022.65 eV 1.75 eV 33434.71 cts 3.65%# 3: 1030.95 eV 2.70 eV 45595.86 cts 4.98%# 4: 1033.84 eV 2.75 eV 36971.36 cts 4.04%# 5: 1036.41 eV 2.69 eV 30324.54 cts 3.31%# 6: 1039.04 eV 2.98 eV 22480.38 cts 2.45%# 7: 1042.32 eV 2.84 eV 19744.76 cts 2.16%# 8: 1044.76 eV 1.21 eV 165624.48 cts 18.08%# 9: 1045.98 eV 3.30 eV 66352.48 cts 7.24%#10: 1053.77 eV 3.91 eV 29749.46 cts 3.25%#11: 1056.56 eV 2.74 eV 13378.60 cts 1.46%#12: 1058.73 eV 2.28 eV 8554.32 cts 0.93%#13: 1060.86 eV 3.59 eV 12208.78 cts 1.33%3 iterations, chi square = 3.1764

Cu (2p3) at 932.67 eVAu (4f7) 83.98 eV

Ag FWHM: 0.49 eVG:L Ratio: 60:40

∆E = 23.01 eV

Zn (2p 3/2)BE = 1021.75 eV

Zn (2p 1/2)BE = 1044.76 eV

Page 387: Vol 1 - XPS of Elements & Native Oxides - 1999

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Zinc Metal (Z=30) Zn0

[CAS# 7440-66-6]E

lect

ron

Cou

nts

Binding Energy (eV)

1200

5 -53 1 -1 -3

Valence Bands[Ar] 3d104s2

I.E. = 906 kJ/molBE = 0.5 eV

Page 388: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

Zirconium Metal (Z=40) Zr0

[CAS# 7440-67-7]

Detailed Surface Composition Table

Description: Zirconium (Zr)Date: Fri Mar 11 1994

Corrected Exper. Sens Norm Relative Signal BE BE Factor Area Area Zr Auger 1392.6 1392.6 0.00 1404 0 Zr Auger 1368.2 1368.2 0.00 1987 0 Zr Auger 1337.7 1337.7 0.00 2515 0 O 1s 530.5 530.5 2.80 1215 434 Zr3s 429.6 429.6 2.05 12694 6202 N 1s 396.7 396.7 1.77 934 528 Zr loss 359.3 359.3 0.00 2485 0 Zr3p1 343.0 343.0 2.61 38152 14596 Zr3p3 329.4 329.4 5.10 42000 8234 Ar2p 243.7 243.7 3.16 1599 506 Zr loss 196.1 196.1 0.00 14461 0 Zr3d 178.7 178.7 7.16 75400 10531 Zr4s 50.3 50.3 0.00 2010 1844 Zr4p 26.8 26.8 1.09 12313 11280

Page 389: Vol 1 - XPS of Elements & Native Oxides - 1999

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Zirconium Metal (Z=40) Zr0

[CAS# 7440-67-7]E

lect

ron

Cou

nts

Binding Energy (eV)

54000

1400 01120 840 560 280

Zr

(Aug

er)

Zr

(Aug

er)

Zr

(Aug

er) O

(1s)

Zr(

3s)

N(1

s)

Zr

loss

Z

r(3p

1)Z

r(3p

3)

Zr

loss

Z

r(3d

)

Zr

(4s)

Zr(

4p)

Ar(

2p)

Wide Scan Survey Spectrum

Page 390: Vol 1 - XPS of Elements & Native Oxides - 1999

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Zirconium Metal (Z=40) Zr0

[CAS# 7440-67-7]E

l e c t r o n C

o u n t s

Binding Energy (eV)

20000

190 170186 182 178 174

Baseline: 185.50 to 175.70 eV# 1: 178.71 eV 0.49 eV 178755.00 cts 38.13%# 2: 179.22 eV 0.89 eV 74132.49 cts 15.81%# 3: 180.06 eV 1.24 eV 24741.76 cts 5.28%# 4: 181.12 eV 0.59 eV 119159.98 cts 25.42%# 5: 181.65 eV 1.02 eV 49326.66 cts 10.52%# 6: 182.44 eV 1.71 eV 22675.04 cts 4.84%22 iterations, chi square = 3.8372

Cu (2p3) at 932.67 eVAu (4f7) 83.98 eV

Ag FWHM: 0.49 eVG:L Ratio: 80:20

∆E = 2.41 eV

Zr (3d 5/2)BE = 178.71 eV

Zr (3d 3/2)BE = 181.12 eV

Page 391: Vol 1 - XPS of Elements & Native Oxides - 1999

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Zirconium Metal (Z=40) Zr0

[CAS# 7440-67-7]E

lect

ron

Cou

nts

Binding Energy (eV)

4500

15 -511 7 3 -1

Valence Bands[Kr] 4d25s2

I.E. = 660 kJ/molBE = 1.8 eV

BE = 10.4 eV

BE = 0.7 eV

Page 392: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xliv Handbook of The Elements and Native Oxides

Monochromatic XPS Spectra of Native Oxides

Page 393: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

SILVER - Naturally Formed Native Oxide native AgOx

Detailed Surface Composition Table

Description: NATIVE SILVER OXIDE / SILVER (Ag) NODULE 90 DEG TOA, AS RECEIVEDDate: Thu Jun 2 1988

Corrected Exper. Sens Norm Relative Signal BE BE Factor Area Area Atom % Ag3s 716.3 716.3 2.93 13273 4530 Ag3p1 603.9 604.0 4.03 38747 9615 Ag3p3 573.1 573.2 8.06 79345 9844 * O 1s 532.0 532.0 2.93 38595 13172 15.98 NaAuger 496.9 496.9 3.40 14115 4151 Ag loss 394.4 394.5 0.00 97697 0 * Ag3d 367.8 367.9 18.04 314137 17413 21.12 Ca2p 347.1 347.2 5.07 3480 686 * C 1s 284.8 284.9 1.00 50035 50035 60.69 Cl2s 268.2 268.2 1.69 3561 2107 * Cl2p 197.4 197.5 2.29 4177 1828 2.22 Ag4s 96.0 96.1 0.64 10142 15748 Ag4p 62.4 62.5 2.06 38414 18648 Ag loss 24.5 24.6 0.14 13512 96514 Ag4d 4.8 4.9 1.99 36578 18359

Page 394: Vol 1 - XPS of Elements & Native Oxides - 1999

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SILVER - Naturally Formed Native Oxide native AgOxE

lect

ron

Cou

nts

Binding Energy (eV)

100000

1000 0800 600 400 200

Ag(

3s) A

g(3p

1)

Ag(

3p3)

O(1

s)

Na(

Aug

er)

Ag

loss

Ag(

3d)

Ca(

2p)

C(1

s)C

l(2s)

Cl(2

p)

Ag(

4s)

Ag(

4p)

Ag

loss

Ag(

4d)

Wide Scan Survey SpectrumCharge Neutralizer OFF

Chlorine (Cl) and sulfur (S)are common contaminants onsilver surfaces. They are dueto gases that contain chlorineor sulfur.

The sodium (Na) and calcium(Ca) contaminants are lesscommon contaminants and areoften attributed to physicalcontact.

Page 395: Vol 1 - XPS of Elements & Native Oxides - 1999

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SILVER - Naturally Formed Native Oxide native AgOxE

l e c t r o n C

o u n t s

Binding Energy (eV)

11000

373 363371 369 367 365

Baseline: 370.92 to 365.63 eV# 1: 367.34 eV 0.70 eV 7485.61 cts 3.30%# 2: 368.23 eV 0.73 eV 205507.95 cts 90.50%# 3: 369.04 eV 0.70 eV 14089.77 cts 6.20%

Ag (3d 5/2)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 80:20

AgO ?BE = 367.3 eV

Ag 0 & ?BE = 368.2 eV

Page 396: Vol 1 - XPS of Elements & Native Oxides - 1999

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SILVER - Naturally Formed Native Oxide native AgOxE

l e c t r o n C

o u n t s

Binding Energy (eV)

4500

542 522538 534 530 526

Baseline: 536.90 to 527.80 eV# 1: 531.25 eV 1.50 eV 30476.93 cts 27.00%# 2: 532.32 eV 1.47 eV 68204.37 cts 60.42%# 3: 533.46 eV 1.40 eV 14210.55 cts 12.59%6 iterations, chi square = 2.9061

O (1s)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 80:20

Page 397: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

SILVER - Naturally Formed Native Oxide native AgOxE

l e c t r o n C

o u n t s

Binding Energy (eV)

5500

298 278294 290 286 282

Baseline: 295.25 to 281.61 eV# 1: 285.56 eV 1.42 eV 101617.66 cts 75.78%# 2: 286.65 eV 1.34 eV 13872.01 cts 10.35%# 3: 288.14 eV 1.27 eV 6267.00 cts 4.67%# 4: 289.24 eV 1.49 eV 10697.66 cts 7.98%# 5: 293.08 eV 1.04 eV 1638.70 cts 1.22%5 iterations, chi square = 1.6805

C (1s)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 80:20

C-C,C-R

COH,COR

COOH,COOR

CO3?

Page 398: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

ALUMINIUM - Naturally Formed Native Oxide native AlOx

Detailed Surface Composition Table

Description: Native Aluminium Oxide / Aluminium (Al) Foil (kitchen type foil) 35 deg TOADate: Fri Jan 29 1993

Corrected Exper. Sens Norm Relative Signal BE BE Factor Area Area Atom % O Auger 980.9 980.9 0.00 23810 0 O loss 554.3 554.3 0.00 34992 0 * O 1s 532.6 532.6 2.12 105305 49672 44.02 * C 1s 285.9 285.9 1.00 30956 31002 27.48 * Al2s 119.9 119.9 0.90 28981 32155 28.50 Al2p 75.0 75.0 0.67 16955 25211 O 2s 24.1 24.1 0.18 5178 28105 O 2p 7.8 7.8 0.03 1748 68842

Page 399: Vol 1 - XPS of Elements & Native Oxides - 1999

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ALUMINIUM - Naturally Formed Native Oxide native AlOxE

lect

ron

Cou

nts

Binding Energy (eV)

4000

1000 0800 600 400 200

O(A

uger

)

O lo

ss

O(1

s)

C(1

s)

Al(2

s)

Al(2

p)

O(2

s)O

(2p)

Wide Scan Survey SpectrumCharge Neutralizer OFF

Page 400: Vol 1 - XPS of Elements & Native Oxides - 1999

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ALUMINIUM - Naturally Formed Native Oxide native AlOxE

l e c t r o n C

o u n t s

Binding Energy (eV)

1800

80 7078 76 74 72

Baseline: 78.75 to 71.29 eV# 1: 72.89 eV 0.66 eV 15467.25 cts 15.70%# 2: 73.35 eV 0.63 eV 7701.34 cts 7.82%# 3: 74.26 eV 1.32 eV 6395.67 cts 6.49%# 4: 75.64 eV 1.44 eV 60058.68 cts 60.96%# 5: 76.57 eV 1.19 eV 8904.13 cts 9.04%3 iterations, chi square = 0.9116

Al (2p)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 80:20

Al (2p 3/2)Al 0

BE =72.9 eV

Al (2p 1/2)Al 0

Al 2O3

BE =75.6 eV

Al OOHMight be dueto Al (OH)3.

Page 401: Vol 1 - XPS of Elements & Native Oxides - 1999

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ALUMINIUM - Naturally Formed Native Oxide native AlOxE

l e c t r o n C

o u n t s

Binding Energy (eV)

5200

543 523539 535 531 527

Baseline: 538.53 to 527.55 eV# 1: 532.35 eV 1.88 eV 84048.62 cts 42.40%# 2: 533.54 eV 1.90 eV 84532.22 cts 42.64%# 3: 534.77 eV 2.14 eV 29661.00 cts 14.96%12 iterations, chi square = 1.5907

O (1s)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 80:20

Al 2O3

BE =532.3 eV

Page 402: Vol 1 - XPS of Elements & Native Oxides - 1999

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ALUMINIUM - Naturally Formed Native Oxide native AlOxE

l e c t r o n C

o u n t s

Binding Energy (eV)

4200

297 277293 289 285 281

Baseline: 293.31 to 283.35 eV# 1: 286.36 eV 1.41 eV 76053.88 cts 85.93%# 2: 287.93 eV 1.27 eV 5007.06 cts 5.66%# 3: 289.13 eV 1.40 eV 2496.42 cts 2.82%# 4: 290.67 eV 1.40 eV 4951.65 cts 5.59%7 iterations, chi square = 1.4595

C (1s)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 80:20

(1.36 eV above 285.0 eV)

Differential charging mightbe present in carbon andoxide layers. Pure metalBEs should not be affected.

C-C,C-R

COH,COR

COOH,COORCO3

Page 403: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

ARSENIC - Naturally Formed Native Oxide native AsOx

Detailed Surface Composition Table

Description: NATIVE ARSENIC OXIDE / ARSENIC (As) CHIP 90 DEGREE TOADate: Wed Jun 6 1988

Corrected Exper. Sens Norm Relative Signal BE BE Factor Area Area Atom % * O 1s 531.4 531.4 2.93 16523 5639 4.34 As Auger 468.5 468.5 0.12 9603 79364 As Auger 458.7 458.7 0.12 20924 172926 As Auger 425.3 425.3 0.12 34652 286380 As Auger 387.8 387.8 0.12 12856 106248 As Auger 370.9 370.9 0.00 65251 0 As Auger 359.5 359.5 0.00 42144 0 As Auger 334.9 334.9 0.00 58946 0 * C 1s 279.1 279.1 1.00 69841 69841 53.70 As Auger 261.0 261.0 0.00 267762 0 As loss 243.1 243.1 0.12 27806 231717 As Auger 225.1 225.1 0.00 159108 0 As3s 204.3 204.3 1.32 51184 38776 As loss 175.0 175.0 0.12 5137 42808 As loss 159.6 159.6 0.12 27747 231225 * As (3p) 140.1 140.1 2.68 146298 54589 41.97 As loss 59.4 59.4 0.12 28866 240550 As3d 40.9 40.9 1.82 85061 46737

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ARSENIC - Naturally Formed Native Oxide native AsOxE

lect

ron

Cou

nts

Binding Energy (eV)

40000

1000 0800 600 400 200

O(1

s)

As(

Aug

er)

As(

Aug

er)

As(

Aug

er)

As(

Aug

er)

As(

Aug

er)

As(

Aug

er)

As(

Aug

er)

C(1

s)A

s(A

uger

)A

s lo

ss

As(

Aug

er)

As(

3s)

As

loss

A

s lo

ss

As

(3p)

As

loss

A

s(3d

)

Wide Scan Survey SpectrumCharge Neutralizer OFF

Page 405: Vol 1 - XPS of Elements & Native Oxides - 1999

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ARSENIC - Naturally Formed Native Oxide native AsOxE

l e c t r o n C

o u n t s

Binding Energy (eV)

8000

54 3450 46 42 38

Baseline: 48.20 to 39.10 eV# 1: 41.63 eV 0.60 eV 60292.84 cts 44.96%# 2: 42.30 eV 0.67 eV 51667.47 cts 38.53%# 3: 42.76 eV 0.82 eV 7060.35 cts 5.27%# 4: 44.58 eV 1.09 eV 8343.32 cts 6.22%# 5: 45.51 eV 1.23 eV 6728.74 cts 5.02%3 iterations, chi square = 2.1533

As (3d)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 80:20

As 0

BE = 41.6 eV

As 2O3

BE = 44.6 eVAs 2O5

BE = 45.5 eV

Page 406: Vol 1 - XPS of Elements & Native Oxides - 1999

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ARSENIC - Naturally Formed Native Oxide native AsOxE

lect

ron

Cou

nts

Binding Energy (eV)

6500

542 522538 534 530 526

Baseline: 540.51 to 528.51 eV# 1: 531.48 eV 1.37 eV 109853.70 cts 76.84%# 2: 532.98 eV 1.57 eV 33101.79 cts 23.16%3 iterations, chi square = 12.2635

O (1s)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 80:20

Page 407: Vol 1 - XPS of Elements & Native Oxides - 1999

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ARSENIC - Naturally Formed Native Oxide native AsOxE

lect

ron

Cou

nts

Binding Energy (eV)

5000

297 277293 289 285 281

Baseline: 286.88 to 282.73 eV# 1: 284.65 eV 1.02 eV 17177.01 cts 100.00%6 iterations, chi square = 9.9478

C (1s)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 80:20

(0.35 eV below 285.0 eV)

C-C,C-R

Page 408: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

GOLD - Naturally Formed Native Oxide native AuOx

Detailed Surface Composition Table

Description: Native Gold Oxide / Gold (Au) Foil 35 DEG TOA (as received)

Date: Tue Mar 23 1993

Corrected Exper. Sens Norm Relative Signal BE BE Factor Area Area Atom % Au4p3 546.6 546.4 4.39 15873 3619 * O 1s 532.6 532.3 2.22 30697 13820 26.42 Au4d3 353.6 353.4 7.51 34060 4535 Au4d5 335.3 335.0 11.15 39399 3533 * C 1s 285.0 284.7 1.00 30708 30712 58.72 * Si2s 153.5 153.2 1.08 2982 2760 5.28 Au loss 103.5 103.3 0.00 38784 0 * Au4f 87.4 87.2 20.55 102875 5007 9.57 Au5p1 74.3 74.1 0.56 1045 1860 Au5p3 58.1 57.8 1.35 5388 3992 O 2s 26.0 25.7 0.18 3007 16996

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GOLD - Naturally Formed Native Oxide native AuOxE

lect

ron

Cou

nts

Binding Energy (eV)

14000

1000 0800 600 400 200

Au(

4p3)

O(1

s)

Au(

4d3)

Au(

4d5)

C(1

s)

Si(2

s)

Au

loss

A

u(4f

)A

u(5p

1)A

u(5p

3)

O(2

s)

Wide Scan Survey SpectrumCharge Neutralizer OFF

Page 410: Vol 1 - XPS of Elements & Native Oxides - 1999

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GOLD - Naturally Formed Native Oxide native AuOxE

l e c t r o n C

o u n t s

Binding Energy (eV)

12000

96 7692 88 84 80

Baseline: 92.45 to 80.30 eV# 1: 84.09 eV 0.81 eV 196873.55 cts 53.51%# 2: 85.33 eV 1.40 eV 11072.47 cts 3.01%# 3: 87.76 eV 0.83 eV 151349.94 cts 41.13%# 4: 88.75 eV 1.40 eV 8641.00 cts 2.35%9 iterations, chi square = 2.9658

Au (4f)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 70:30

Au 0

BE =84.1 eV

AuxOy

Page 411: Vol 1 - XPS of Elements & Native Oxides - 1999

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GOLD - Naturally Formed Native Oxide native AuOxE

lect

ron

Cou

nts

Binding Energy (eV)

3400

542 522538 534 530 526

Baseline: 538.05 to 527.85 eV# 1: 532.38 eV 1.79 eV 102904.73 cts 79.00%# 2: 533.28 eV 1.70 eV 27360.77 cts 21.00%3 iterations, chi square = 2.6595

O (1s)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 80:20

Seems to be oxygenbonded to carbon only.

Page 412: Vol 1 - XPS of Elements & Native Oxides - 1999

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GOLD - Naturally Formed Native Oxide native AuOxE

l e c t r o n C

o u n t s

Binding Energy (eV)

1500

296 276292 288 284 280

Baseline: 293.25 to 280.95 eV# 1: 285.11 eV 1.31 eV 38428.30 cts 68.37%# 2: 286.47 eV 1.34 eV 11474.44 cts 20.42%# 3: 287.71 eV 1.11 eV 2586.08 cts 4.60%# 4: 289.06 eV 1.33 eV 3715.79 cts 6.61%7 iterations, chi square = 2.4117

C (1s)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 80:20

(0.11 eV above 285.0 eV)

C-C,C-R

COH,COR

COOH,COOR

C=O,O-C-O

Page 413: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

BORON - Naturally Formed Native Oxide native BOx

Detailed Surface Composition Table

Description: NATIVE BORON OXIDE / BORON (B) LUMP AS RECEIVEDDate: Mon May 16 1988

Corrected Exper. Sens Norm Relative Signal BE BE Factor Area Area Atom % O Auger 976.7 976.7 0.00 15538 0 O loss 554.1 554.1 0.00 4233 0 * O 1s 531.5 531.5 2.93 35163 12001 8.61 * N 1s 400.0 400.0 1.80 1919 1066 0.76 * C 1s 284.0 284.0 1.00 25070 25070 17.98 B loss 236.4 236.4 0.00 4223 0 B loss 211.4 211.4 0.00 28276 0 * B 1s 186.6 186.6 0.49 49225 101287 72.65 O 2s 23.9 23.9 0.14 1202 8583

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BORON - Naturally Formed Native Oxide native BOxE

lect

ron

Cou

nts

Binding Energy (eV)

25000

1000 0800 600 400 200

O(A

uger

)

O lo

ss

O(1

s)

N(1

s)

C(1

s)

B lo

ss

B lo

ss

B(1

s)

O(2

s)

Wide Scan Survey SpectrumCharge Neutralizer OFF

Page 415: Vol 1 - XPS of Elements & Native Oxides - 1999

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BORON - Naturally Formed Native Oxide native BOxE

l e c t r o n C

o u n t s

Binding Energy (eV)

2000

198 178194 190 186 182

Baseline: 191.65 to 184.35 eV# 1: 186.68 eV 0.95 eV 11730.01 cts 27.11%# 2: 187.46 eV 0.86 eV 17845.93 cts 41.25%# 3: 188.25 eV 0.86 eV 9683.12 cts 22.38%# 4: 188.97 eV 0.85 eV 4005.41 cts 9.26%3 iterations, chi square = 1.3460

B (1s)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 80:20

Seems to be mainly boronmetal and some suboxides.B2O3 seems to be absent.The lowest BE peak isprobably a polymorphicform of boron.

B 0 (amorphous)BE = 187.5 eV

Page 416: Vol 1 - XPS of Elements & Native Oxides - 1999

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BORON - Naturally Formed Native Oxide native BOxE

l e c t r o n C

o u n t s

Binding Energy (eV)

3800

542 522538 534 530 526

Baseline: 537.29 to 527.25 eV# 1: 531.22 eV 1.53 eV 49098.86 cts 45.89%# 2: 532.20 eV 1.50 eV 45482.09 cts 42.51%# 3: 533.29 eV 1.49 eV 12405.10 cts 11.60%3 iterations, chi square = 1.2850

O (1s)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 80:20

Seems to be oxygenbonded to carboncontamination only.

Page 417: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

BORON - Naturally Formed Native Oxide native BOxE

l e c t r o n C

o u n t s

Binding Energy (eV)

3000

297 277293 289 285 281

Baseline: 290.96 to 281.08 eV# 1: 284.73 eV 1.36 eV 51285.11 cts 79.97%# 2: 286.28 eV 1.20 eV 6908.87 cts 10.77%# 3: 287.52 eV 1.05 eV 2998.69 cts 4.68%# 4: 288.67 eV 1.26 eV 2935.28 cts 4.58%10 iterations, chi square = 1.6367

C (1s)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 80:20

(0.27 eV below 285.0 eV)

C-C,C-R

COH,COR

COOH,COOR

C=O,O-C-O

Page 418: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

BERYLLIUM - Naturally Formed Native Oxide native BeOx

Detailed Surface Composition Table

Description: Native Beryllium Oxide / Beryllium (Be) Foil 35 DEG TOA (previously ion etched)Date: Wed Mar 10 1993

Corrected Exper. Sens Norm Relative Signal BE BE Factor Area Area Atom % O Auger 980.9 980.9 0.00 14994 0 O loss 557.1 557.1 0.00 31971 0 * O 1s 533.2 533.2 2.22 76700 34567 32.50 Ar2s 321.1 321.1 1.90 1458 768 C loss 306.1 306.1 0.00 1956 0 * C 1s 286.2 286.2 1.00 24575 24615 23.14 * Ar2p 242.5 242.5 3.17 2667 842 0.79 * Cl2p 199.4 199.4 2.48 1149 464 0.44 S 2p 170.6 170.6 1.87 1122 600 Be loss 131.6 131.6 10.58 2968 281 * Be1s 114.3 114.3 0.23 10490 45883 43.13 O 2s 24.7 24.7 0.18 4226 23864

Page 419: Vol 1 - XPS of Elements & Native Oxides - 1999

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BERYLLIUM - Naturally Formed Native Oxide native BeOxE

lect

ron

Cou

nts

Binding Energy (eV)

24000

1000 0800 600 400 200

O(A

uger

)

O lo

ss

O(1

s)

Ar(

2s)

C lo

ss

C

(1s)

Ar(

2p)

Cl(2

p)

S(2

p)

Be

loss

B

e(1s

)

O(2

s)

Wide Scan Survey SpectrumCharge Neutralizer OFF

Page 420: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

BERYLLIUM - Naturally Formed Native Oxide native BeOxE

l e c t r o n C

o u n t s

Binding Energy (eV)

2000

122 102118 114 110 106

Baseline: 118.95 to 109.45 eV# 1: 111.93 eV 0.77 eV 28142.39 cts 39.55%# 2: 112.84 eV 1.44 eV 3439.60 cts 4.83%# 3: 114.81 eV 1.68 eV 39577.87 cts 55.62%4 iterations, chi square = 0.9909

Be (1s)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 80:20

BeOBE = 114.8 eV

Be 0

BE = 111.9 eV

Might be due to ahydrated Be(1+) ora suboxide species.

Page 421: Vol 1 - XPS of Elements & Native Oxides - 1999

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BERYLLIUM - Naturally Formed Native Oxide native BeOxE

l e c t r o n C

o u n t s

Binding Energy (eV)

6000

542 522538 534 530 526

Baseline: 538.50 to 527.65 eV# 1: 531.70 eV 1.50 eV 42264.76 cts 14.39%# 2: 532.69 eV 1.34 eV 117292.54 cts 39.93%# 3: 533.62 eV 1.26 eV 105155.11 cts 35.80%# 4: 534.63 eV 1.36 eV 29018.93 cts 9.88%7 iterations, chi square = 1.8661

O (1s)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 80:20

BeOBE = 531.7 eV

Page 422: Vol 1 - XPS of Elements & Native Oxides - 1999

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BERYLLIUM - Naturally Formed Native Oxide native BeOxE

l e c t r o n C

o u n t s

Binding Energy (eV)

1200

296 276292 288 284 280

Baseline: 294.40 to 282.20 eV# 1: 285.30 eV 1.44 eV 4451.33 cts 10.59%# 2: 286.38 eV 1.28 eV 28622.74 cts 68.09%# 3: 287.87 eV 1.40 eV 4770.96 cts 11.35%# 4: 290.44 eV 1.75 eV 4188.58 cts 9.96%3 iterations, chi square = 1.5045

C (1s)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 80:20

(1.38 eV above 285.0 eV)

Differential charging mightbe present in carbon andoxide layers. Pure metalBEs should not be affected.

C-C,C-R

COH,COR

CO3carbide

Page 423: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

BISMUTH - Naturally Formed Native Oxide native BiOx

Detailed Surface Composition Table

Description: NATIVE BISMUTH OXIDE / BISMUTH (Bi) SLUG (90 DEG TOA)Date: Wed Apr 27 1988

Corrected Exper. Sens Norm Relative Signal BE BE Factor Area Area Atom % O Auger 973.6 973.6 0.00 23820 0 Bi4p1 807.5 807.5 2.10 9868 4699 Bi4p3 680.9 680.9 6.48 50588 7807 O loss 548.6 548.6 0.00 9289 0 * O 1s 530.2 530.2 2.93 62595 21363 30.96 Bi loss 484.5 484.5 0.00 5351 0 Bi4d3 465.7 465.7 9.14 118724 12989 Bi4d5 441.9 441.9 13.44 154228 11475 * C 1s 284.7 284.7 1.00 31184 31184 45.20 * Bi4f 158.2 158.2 24.83 408419 16449 23.84 Bi5p1 120.3 120.3 0.55 8050 14744 Bi5p3 94.2 94.2 1.41 18642 13221 O+Bi 25.0 25.0 0.14 69977 499836 O 2p 10.9 10.9 0.02 814 42823

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BISMUTH - Naturally Formed Native Oxide native BiOxE

lect

ron

Cou

nts

Binding Energy (eV)

250000

1000 0800 600 400 200

O(A

uger

)

Bi(4

p1)

Bi(4

p3)

O lo

ss

O

(1s)

Bi l

oss

B

i(4d3

)

Bi(4

d5)

C(1

s)

Bi(4

f)

Bi(5

p1)

Bi(5

p3) O

+B

i

O

(2p)

Wide Scan Survey SpectrumCharge Neutralizer OFF

Page 425: Vol 1 - XPS of Elements & Native Oxides - 1999

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BISMUTH - Naturally Formed Native Oxide native BiOxE

lect

ron

Cou

nts

Binding Energy (eV)

100000

172 152168 164 160 156

Baseline: 161.35 to 155.29 eV# 1: 157.03 eV 0.84 eV 121183.34 cts 4.98%# 2: 159.21 eV 1.20 eV 2312642.00 cts 95.02%3 iterations, chi square = 4.9238

Bi (4f )

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 80:20

Bi 0

BE =157.0 eV

Bi 2O3

BE =159.2 eV

Page 426: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

BISMUTH - Naturally Formed Native Oxide native BiOxE

l e c t r o n C

o u n t s

Binding Energy (eV)

2000

543 523539 535 531 527

Baseline: 535.94 to 526.53 eV# 1: 529.93 eV 1.26 eV 30769.56 cts 53.77%# 2: 531.30 eV 1.25 eV 16036.69 cts 28.02%# 3: 532.14 eV 1.88 eV 10418.22 cts 18.21%23 iterations, chi square = 2.5195

O (1s)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 80:20

Bi2O3

BE =529.9 eV

Page 427: Vol 1 - XPS of Elements & Native Oxides - 1999

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BISMUTH - Naturally Formed Native Oxide native BiOxE

l e c t r o n C

o u n t s

Binding Energy (eV)

1300

297 277293 289 285 281

Baseline: 291.51 to 282.33 eV# 1: 285.42 eV 1.26 eV 19675.43 cts 78.00%# 2: 286.33 eV 1.44 eV 2463.76 cts 9.77%# 3: 288.94 eV 1.34 eV 3085.06 cts 12.23%11 iterations, chi square = 2.1974

C (1s)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 80:20

(0.42 eV above 285.0 eV)

C-C,C-R

COH,CORCO3

Page 428: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

CARBON - Naturally Formed Native Oxide native COx

Detailed Surface Composition Table

Description: Native Carbon Oxide / Carbon (C) Sheet 35 TOA (previously ion etched)

Date: Tue Mar 23 1993

Corrected Exper. Sens Norm Relative Signal BE BE Factor Area Area Atom % O Auger 977.7 977.6 0.00 1802 0 * O 1s 532.8 532.7 2.12 14423 6803 7.43 Ar2s 319.4 319.3 1.89 3192 1688 * C 1s 284.6 284.5 1.00 82785 82774 90.43 * Ar2p 241.6 241.5 3.19 6243 1955 2.14 C 2p 16.3 16.2 0.00 1705 642910

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CARBON - Naturally Formed Native Oxide native COxE

lect

ron

Cou

nts

Binding Energy (eV)

13000

1000 0800 600 400 200

O(A

uger

)

O(1

s)

Ar(

2s)

C(1

s)

Ar(

2p)

C(2

p)

Wide Scan Survey SpectrumCharge Neutralizer OFF

Page 430: Vol 1 - XPS of Elements & Native Oxides - 1999

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CARBON - Naturally Formed Native Oxide native COxE

l e c t r o n C

o u n t s

Binding Energy (eV)

4000

296 276292 288 284 280

Baseline: 290.95 to 281.95 eV# 1: 284.67 eV 1.33 eV 97869.61 cts 73.93%# 2: 285.74 eV 1.48 eV 23774.11 cts 17.96%# 3: 287.08 eV 1.60 eV 7374.91 cts 5.57%# 4: 288.80 eV 1.81 eV 3370.44 cts 2.55%4 iterations, chi square = 1.5626

C (1s)

Cu (2p3) at 932.67 eVAu (4f7) 83.98 eV

Ag FWHM: 0.75 eVG:L Ratio: 80:20

C-C,C-HBE = 284.7 eV

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CARBON - Naturally Formed Native Oxide native COxE

lect

ron

Cou

nts

Binding Energy (eV)

1300

542 522538 534 530 526

Baseline: 537.30 to 527.65 eV# 1: 532.04 eV 1.62 eV 19520.34 cts 36.56%# 2: 533.15 eV 1.77 eV 33867.70 cts 63.44%6 iterations, chi square = 1.8951

O (1s)

Cu (2p3) at 932.67 eVAu (4f7) 83.98 eV

Ag FWHM: 0.75 eVG:L Ratio: 80:20

Page 432: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

CADMIUM - Naturally Formed Native Oxide native CdOx

Detailed Surface Composition Table

Description: NATIVE CADMIUM OXIDE / CADMIUM (Cd) SHEET (90 DEG TOA)Date: Tue May 10 1988

Corrected Exper. Sens Norm Relative Signal BE BE Factor Area Area Atom % O Auger 978.2 978.2 0.00 35688 0 Cd loss 773.0 773.0 0.00 18269 0 Cd3p1 653.2 653.2 4.22 47251 11197 Cd loss 640.2 640.2 0.00 8705 0 Cd3p3 618.9 618.9 8.50 105641 12428 O 1s 553.3 553.3 0.14 44347 316764 * O 1s 532.2 532.2 2.93 109960 37529 27.38 Cd loss 430.8 430.8 0.00 73885 0 * Cd3d 405.5 405.5 20.22 418821 20713 15.11 C loss 306.6 306.6 0.00 13881 0 * C 1s 285.2 285.2 1.00 77762 77762 56.73 S 2s 232.9 232.9 1.43 1650 1154 * S 2p 169.1 169.1 1.68 1801 1074 0.78 Cd4s 109.4 109.4 0.69 9091 13137 Cd4p 68.2 68.2 2.25 36900 16400 Cd4d 10.9 10.9 1.89 63888 33803

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CADMIUM - Naturally Formed Native Oxide native CdOxE

lect

ron

Cou

nts

Binding Energy (eV)

140000

1000 0800 600 400 200

O(A

uger

)

Cd

loss

Cd(

3p1)

Cd

loss

C

d(3p

3)

O(1

s)O

(1s)

Cd

loss

Cd(

3d)

C lo

ss

C

(1s)

S(2

s)

S(2

p)

Cd(

4s)

Cd(

4p)

Cd(

4d)

Wide Scan Survey SpectrumCharge Neutralizer OFF

The sulfur (S) contamination isattributed to contact with a gascontaining sulfur (e.g. H2S).

Page 434: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

CADMIUM - Naturally Formed Native Oxide native CdOxE

l e c t r o n C

o u n t s

Binding Energy (eV)

11000

411 401409 407 405 403

Baseline: 410.02 to 402.49 eV# 1: 405.36 eV 1.16 eV 134812.69 cts 26.83%# 2: 406.37 eV 1.40 eV 323015.63 cts 64.29%# 3: 406.96 eV 1.40 eV 44631.48 cts 8.88%3 iterations, chi square = 1.9413

Cd (3d 5/2)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 80:20

Cd(OH)2

BE = 406.4 eV(perhaps CdO)

Cd 0

BE = 405.4 eV

CdCO3

BE = 407.0 eV

Cd2O and CdO2 mightalso be present.

Page 435: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

CADMIUM - Naturally Formed Native Oxide native CdOxE

l e c t r o n C

o u n t s

Binding Energy (eV)

11000

542 522538 534 530 526

Baseline: 537.53 to 528.67 eV# 1: 531.84 eV 1.24 eV 86417.22 cts 32.71%# 2: 532.72 eV 1.27 eV 143028.56 cts 54.13%# 3: 533.69 eV 1.24 eV 34780.00 cts 13.16%4 iterations, chi square = 3.1521

O (1s)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 80:20

Page 436: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

CADMIUM - Naturally Formed Native Oxide native CdOxE

l e c t r o n C

o u n t s

Binding Energy (eV)

7000

296 276292 288 284 280

Baseline: 294.12 to 282.82 eV# 1: 286.02 eV 1.32 eV 116551.37 cts 73.44%# 2: 287.13 eV 1.29 eV 13821.24 cts 8.71%# 3: 289.39 eV 1.52 eV 12433.42 cts 7.83%# 4: 290.48 eV 1.50 eV 15897.23 cts 10.02%16 iterations, chi square = 1.6805

C (1s)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 80:20

(1.02 eV above 285.0 eV)

Differential charging mightbe present in carbon andoxide layers. Pure metalBEs should not be affected.

C-C,C-R

COH,COR

CO3

COOH,COOR

Page 437: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

COBALT - Naturally Formed Native Oxide native CoOx

Detailed Surface Composition Table

Description: NATIVE COBALT OXIDE / COBALT (Co) ROD 35 DEG TOA, previously ion etched

Date: Fri May 13 1988

Corrected Exper. Sens Norm Relative Signal BE BE Factor Area Area Atom % O Auger 976.8 976.8 0.00 19380 0 O Auger 929.5 929.5 0.14 11631 83079 Co2p1 797.9 797.9 6.54 44156 6752 * Co2p3 781.9 781.9 12.62 85626 6785 12.31 Co Auger 736.2 736.2 0.82 3147 3847 Co Auger 713.5 713.5 0.00 35652 0 Co Auger 700.5 700.5 0.00 2752 0 O loss 551.7 551.7 0.00 25848 0 * O 1s 531.8 531.8 2.93 60869 20775 37.69 * C 1s 284.7 284.7 1.00 27565 27565 50.00 Ar2p 241.4 241.4 3.04 964 317 Co3s 101.5 101.5 0.82 10557 12906 Co loss 82.7 82.7 0.82 4498 5485 Co3p 59.6 59.6 1.93 26302 13628 O 2s 23.4 23.4 0.14 3423 24451

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© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

COBALT - Naturally Formed Native Oxide native CoOxE

lect

ron

Cou

nts

Binding Energy (eV)

75000

1000 0800 600 400 200

O(A

uger

O(A

uger

)

Co(

2p1)

Co(

2p3)

Co(

Aug

er)

Co(

Aug

er)

Co(

Aug

er)

O lo

ss

O

(1s)

C(1

s)

Ar(

2p)

Co(

3s)

Co

loss

Co(

3p)

O(2

s)

Wide Scan Survey SpectrumCharge Neutralizer OFF

Page 439: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

COBALT - Naturally Formed Native Oxide native CoOxE

l e c t r o n C

o u n t s

Binding Energy (eV)

11000

793 773789 785 781 777

Baseline: 791.35 to 774.25 eV# 1: 778.40 eV 1.00 eV 52627.46 cts 8.72%# 2: 779.41 eV 1.63 eV 77894.61 cts 12.91%# 3: 781.05 eV 1.76 eV 101706.67 cts 16.86%# 4: 782.31 eV 3.29 eV 245352.19 cts 40.67%# 5: 786.67 eV 3.79 eV 125712.58 cts 20.84%3 iterations, chi square = 2.9306

Co (2p 3/2)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 80:20

Co3O4

BE = 779.4 eV

Co(OH)2

BE = 781.0 eV

Co 0

BE = 778.4 eV

Page 440: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

COBALT - Naturally Formed Native Oxide native CoOxE

l e c t r o n C

o u n t s

Binding Energy (eV)

22000

542 522538 534 530 526

Baseline: 538.00 to 526.55 eV# 1: 529.98 eV 1.22 eV 127034.77 cts 19.54%# 2: 531.53 eV 1.21 eV 137712.73 cts 21.18%# 3: 532.33 eV 1.27 eV 280264.75 cts 43.10%# 4: 533.13 eV 1.23 eV 81251.85 cts 12.49%# 5: 533.97 eV 1.68 eV 24025.45 cts 3.69%10 iterations, chi square = 1.6892

O (1s)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 80:20

Co3O4

BE = 530.0 eV

Co(OH)2

BE = 531.5 eV

Page 441: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

COBALT - Naturally Formed Native Oxide native CoOxE

l e c t r o n C

o u n t s

Binding Energy (eV)

12000

297 277293 289 285 281

Baseline: 292.76 to 282.10 eV# 1: 285.52 eV 1.29 eV 189710.09 cts 71.29%# 2: 286.70 eV 1.29 eV 21449.47 cts 8.06%# 3: 287.77 eV 1.30 eV 4604.55 cts 1.73%# 4: 289.12 eV 1.24 eV 36375.33 cts 13.67%# 5: 290.10 eV 1.38 eV 13980.54 cts 5.25%6 iterations, chi square = 1.5694

C (1s)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 80:20

(0.52 above 285.0 eV)

C-C,C-R

COH,COR

COOH,COOR

CO3

Page 442: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

CHROMIUM - Naturally Formed Native Oxide native CrOx

Detailed Surface Composition Table

Description: NATIVE CHROMIUM OXIDE / CHROMIUM (Cr) SHEET (90 DEG TOA, AS RECEIVED)

Date: Tue May 10 1988

Corrected Exper. Sens Norm Relative Signal BE BE Factor Area Area Atom % O Auger 975.5 975.5 0.00 25014 0 Cr Auger 960.5 960.5 0.14 22572 161229 Cr Auger 915.6 915.6 0.00 6781 0 Cr2s 698.0 698.0 3.91 34113 8725 Cr loss 600.0 600.0 0.00 18068 0 Cr2p1 586.1 586.1 3.98 52825 13273 * Cr2p3 576.0 576.0 7.69 114443 14882 14.28 O loss 547.7 547.7 0.00 38135 0 * O 1s 530.6 530.6 2.93 100160 34184 32.80 Sn+Na 495.3 495.3 0.00 2650 0 Sn3d5 486.8 486.8 14.80 1312 89 * N 1s 396.6 396.6 1.80 7298 4054 3.89 C loss 303.5 303.5 4.75 3247 684 * C 1s 284.3 284.3 1.00 51085 51085 49.02 S 2s 225.1 225.1 1.43 2000 1399 S 2p 160.7 160.7 1.68 2813 1677 Cr3s 73.7 73.7 0.60 18635 31267 Cr3p 42.0 42.0 1.17 32407 27627 O 2s 21.7 21.7 0.14 6206 44329

Page 443: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

CHROMIUM - Naturally Formed Native Oxide native CrOxE

lect

ron

Cou

nts

Binding Energy (eV)

60000

1000 0800 600 400 200

O(A

uger

)C

r (A

uger

)

Cr

(Aug

er)

Cr(

2s)

Cr

loss

Cr(

2p1)

Cr(

2p3)

O lo

ss

O

(1s)

Sn+

Na

Sn(

3d5)

N(1

s)

C lo

ss

C

(1s)

S(2

s)

S(2

p) Cr(

3s)

Cr(

3p)

O(2

s)

Wide Scan Survey SpectrumCharge Neutralizer OFF

Nitrogen (N) , tin (Sn), and sulfur (S)are surface contaminants.

Page 444: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

CHROMIUM - Naturally Formed Native Oxide native CrOxE

l e c t r o n C

o u n t s

Binding Energy (eV)

8500

590 570586 582 578 574

Baseline: 581.22 to 572.12 eV# 1: 574.40 eV 1.01 eV 106405.27 cts 34.78%# 2: 575.51 eV 1.05 eV 53539.34 cts 17.50%# 3: 576.59 eV 1.38 eV 71365.59 cts 23.33%# 4: 577.71 eV 2.14 eV 74634.91 cts 24.39%6 iterations, chi square = 2.7030

Cr (2p)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 80:20

Cr 0

BE =574.4 eV

Cr 2O3

BE =575.5 eV

Page 445: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

CHROMIUM - Naturally Formed Native Oxide native CrOxE

l e c t r o n C

o u n t s

Binding Energy (eV)

10000

542 522538 534 530 526

Baseline: 537.29 to 526.86 eV# 1: 529.73 eV 1.11 eV 25823.60 cts 8.34%# 2: 530.75 eV 1.42 eV 159807.97 cts 51.64%# 3: 531.98 eV 1.34 eV 86611.15 cts 27.99%# 4: 533.16 eV 1.47 eV 37229.13 cts 12.03%5 iterations, chi square = 2.1297

O (1s)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 80:20

Cr 2O3

BE = 529.7 eV

Page 446: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

CHROMIUM - Naturally Formed Native Oxide native CrOxE

l e c t r o n C

o u n t s

Binding Energy (eV)

4200

296 276292 288 284 280

Baseline: 291.76 to 280.39 eV# 1: 285.13 eV 1.27 eV 66698.32 cts 74.06%# 2: 286.12 eV 1.25 eV 11852.93 cts 13.16%# 3: 287.27 eV 1.40 eV 4019.53 cts 4.46%# 4: 288.75 eV 1.50 eV 5712.42 cts 6.34%# 5: 283.81 eV 1.30 eV 1776.27 cts 1.97%4 iterations, chi square = 1.4973

C (1s)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 80:20

(0.13 eV above 285.0 eV)

C-C,C-R

COH,COR

COOH,COOR

Carbide

Page 447: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

COPPER - Naturally Formed Native Oxide native CuOx

Detailed Surface Composition Table

Description: NATIVE COPPER OXIDE / COPPER (Cu) SHEET 35 DEG TOA, PREVIOUSLY ION ETCHEDDate: Wed May 11 1988

Corrected Exper. Sens Norm Relative Signal BE BE Factor Area Area Atom % O Auger 975.9 975.9 0.00 16249 0 Cu2p1 953.0 953.0 8.66 32800 3788 * Cu2p3 932.9 932.9 16.73 69695 4166 8.78 Cu Auger 721.2 721.2 0.96 22187 23184 Cu Auger 649.2 649.2 0.00 35065 0 Cu Auger 593.3 593.3 0.96 6708 7009 Cu Auger 569.4 569.4 0.00 76320 0 O loss 549.7 549.7 0.00 15550 0 * O 1s 531.0 531.0 2.93 41018 13999 29.51 * N 1s 397.8 397.8 1.80 3065 1703 3.59 * C 1s 284.0 284.0 1.00 27577 27577 58.12 Cu3s 121.5 121.5 0.96 15571 16271 Cu loss 93.8 93.8 0.00 4653 0 Cu3p 74.6 74.6 2.48 46597 18804 O 2s 22.0 22.0 0.14 2677 19120 Cu3d 2.9 2.9 0.76 5782 7625

Page 448: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

COPPER - Naturally Formed Native Oxide native CuOxE

lect

ron

Cou

nts

Binding Energy (eV)

60000

1000 0800 600 400 200

O(A

uger

)

Cu(

2p1)

Cu(

2p3)

Cu(

Aug

er)

Cu(

Aug

er)

Cu(

Aug

er) Cu(

Aug

er)

O lo

ss

O

(1s)

N(1

s)

C(1

s)

Cu(

3s)

Cu

loss

C

u(3p

)

O(2

s)C

u(3d

)

Wide Scan Survey SpectrumCharge Neutralizer OFF

Page 449: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

COPPER - Naturally Formed Native Oxide native CuOxE

l e c t r o n C

o u n t s

Binding Energy (eV)

16000

944 924940 936 932 928

Baseline: 939.06 to 928.94 eV# 1: 932.52 eV 1.27 eV 258802.45 cts 77.86%# 2: 934.25 eV 1.26 eV 42282.43 cts 12.72%# 3: 935.32 eV 1.43 eV 31291.79 cts 9.41%8 iterations, chi square = 3.0913

Cu (2p 3/2)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 80:20

Cu 0 & Cu2OBE =932.5 eV

CuOBE =934.2 eV

Cu(OH)2

BE =935.3 eV

Page 450: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

COPPER - Naturally Formed Native Oxide native CuOxE

l e c t r o n C

o u n t s

Binding Energy (eV)

3000

542 522538 534 530 526

Baseline: 536.82 to 527.49 eV# 1: 530.60 eV 1.25 eV 29262.14 cts 38.88%# 2: 531.60 eV 1.21 eV 34594.75 cts 45.96%# 3: 532.43 eV 1.39 eV 11413.42 cts 15.16%3 iterations, chi square = 1.6149

O (1s)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 80:20

CuO & Cu2OBE =530.6 eV

Cu(OH)2

BE =531.6eV

Page 451: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

COPPER - Naturally Formed Native Oxide native CuOxE

l e c t r o n C

o u n t s

Binding Energy (eV)

2000

297 277293 289 285 281

Baseline: 291.75 to 280.92 eV# 1: 284.84 eV 1.25 eV 32043.94 cts 73.87%# 2: 286.06 eV 1.18 eV 4829.60 cts 11.13%# 3: 287.62 eV 1.20 eV 1814.96 cts 4.18%# 4: 288.51 eV 1.17 eV 4693.01 cts 10.82%3 iterations, chi square = 1.7840

C (1s)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 80:20

(0.16 eV below 285.0 eV)

C-C,C-R

COH,COR

CO3

Page 452: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

IRON - Naturally Formed Native Oxide native FeOx

Detailed Surface Composition Table

Description: Native Iron Oxide / Iron (Fe) sheet 35 deg TOA, As Received, Gray Area only (no brown color)Date: Fri Mar 12 1993

Corrected Exper. Sens Norm Relative Signal BE BE Factor Area Area Atom % Fe Auger 780.9 780.9 0.00 1701 0 Fe2p1 725.3 725.3 3.24 2572 795 * Fe2p3 711.7 711.7 6.39 6294 985 1.78 * Mn2p 642.8 642.8 9.10 2563 282 0.51 O loss 553.7 553.7 0.10 9565 95335 * O 1s 531.6 531.6 2.22 27286 12273 22.23 Na Auger 498.3 498.3 2.69 3181 1183 * N 1s 399.6 399.6 1.60 1359 852 1.54 * Ca2p 347.7 347.7 4.75 1884 397 0.72 C loss 304.4 304.4 4.02 7209 1794 * C 1s 285.0 285.0 1.00 40396 40413 73.21 Fe3s 92.5 92.5 0.89 2823 3172 Fe3p 55.9 55.9 2.06 4913 2389 O 2s 23.8 23.8 0.18 2089 11790

Page 453: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

IRON - Naturally Formed Native Oxide native FeOxE

lect

ron

Cou

nts

Binding Energy (eV)

12000

1000 0800 600 400 200

Fe(

Aug

er)

Fe(

2p1)

Fe(

2p3)

Mn(

2p)

O lo

ss

O

(1s)

Na(

Aug

er)

N(1

s)

Ca(

2p)

C lo

ss

C

(1s)

Fe(

3s)

Fe(

3p)

O(2

s)

Wide Scan Survey SpectrumCharge Neutralizer OFF

Contaminants (Mn, Na, N, and Ca)are probably due to the productionprocess.

Page 454: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

IRON - Naturally Formed Native Oxide native FeOxE

l e c t r o n C

o u n t s

Binding Energy (eV)

800

722 702718 714 710 706

Baseline: 717.10 to 705.15 eV# 1: 706.80 eV 1.00 eV 262.31 cts 0.75%# 2: 710.05 eV 1.24 eV 11955.13 cts 33.98%# 3: 711.16 eV 1.08 eV 9014.18 cts 25.62%# 4: 712.16 eV 0.98 eV 5682.03 cts 16.15%# 5: 713.13 eV 0.95 eV 3273.30 cts 9.30%# 6: 714.41 eV 1.38 eV 1942.79 cts 5.52%# 7: 709.00 eV 1.60 eV 3056.58 cts 8.69%4 iterations, chi square = 2.9175

Fe (2p 3/2)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 80:20

Fe2O3

BE =710.0 eV

Fe 0

BE =706.8 eV

Page 455: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

IRON - Naturally Formed Native Oxide native FeOxE

l e c t r o n C

o u n t s

Binding Energy (eV)

900

542 522538 534 530 526

Baseline: 537.15 to 526.30 eV# 1: 530.06 eV 1.44 eV 17098.51 cts 35.20%# 2: 531.63 eV 1.40 eV 19163.28 cts 39.45%# 3: 532.73 eV 1.67 eV 12313.94 cts 25.35%14 iterations, chi square = 1.5363

O (1s)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 80:20

FexOy

BE =530.06 eV

Page 456: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

IRON - Naturally Formed Native Oxide native FeOxE

l e c t r o n C

o u n t s

Binding Energy (eV)

2200

296 276292 288 284 280

Baseline: 291.55 to 281.00 eV# 1: 285.17 eV 1.32 eV 55970.92 cts 83.73%# 2: 286.19 eV 1.11 eV 6186.51 cts 9.25%# 3: 287.97 eV 1.57 eV 2613.44 cts 3.91%# 4: 289.02 eV 1.16 eV 2078.73 cts 3.11%10 iterations, chi square = 1.6604

C (1s)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 80:20

(0.17 eV above 285.0 eV)

C-C,C-R

COH,COR

COOH,COOR

Page 457: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

GALLIUM - Naturally Formed Native Oxide native GaOx

Detailed Surface Composition Table

Description: NATIVE GALLIUM OXIDE / GALLIUM (Ga) NODULE MOUNTED ON NON-MAGNETIC STEEL MOUNT TO AVOID ALLOYINGDate: Tue Jun 7 1988

Corrected Exper. Sens Norm Relative Signal BE BE Factor Area Area Atom % O Auger 978.3 978.3 0.00 14517 0 * O 1s 531.9 531.9 2.22 55039 24767 27.95 Ga Auger 519.0 519.0 0.00 25618 0 Ga Auger 504.0 504.0 0.00 7305 0 Ga Auger 492.2 492.2 0.00 19449 0 Ga Auger 424.3 424.3 0.00 37736 0 Ga Auger 397.4 397.4 0.00 6477 0 Ga Auger 391.5 391.5 0.00 16406 0 * C 1s 285.5 285.5 1.00 40376 40413 45.60 Ga3s 173.3 173.3 0.02 5629 281201 Ga3s 159.0 159.0 1.27 29712 23338 Ga loss 121.4 121.4 0.00 17507 0 * Ga3p 105.7 105.7 3.79 88890 23443 26.45 Ga loss 32.1 32.1 0.00 9822 488316 Ga3d 17.7 17.7 1.38 45532 32991

Page 458: Vol 1 - XPS of Elements & Native Oxides - 1999

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GALLIUM - Naturally Formed Native Oxide native GaOxE

lect

ron

Cou

nts

Binding Energy (eV)

25000

1000 0800 600 400 200

O(A

uger

)

O(1

s)G

a(A

uger

)G

a(A

uger

)G

a(A

uger

)

Ga(

Aug

er)

Ga(

Aug

er)

Ga(

Aug

er)

C(1

s)

Ga

loss

G

a(3s

)

Ga

loss

G

a(3p

)

Ga

loss

G

a(3d

)

Wide Scan Survey SpectrumCharge Neutralizer OFF

Page 459: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

GALLIUM - Naturally Formed Native Oxide native GaOxE

l e c t r o n C

o u n t s

Binding Energy (eV)

2200

32 1228 24 20 16

Baseline: 24.47 to 16.08 eV# 1: 18.58 eV 0.60 eV 14010.33 cts 29.83%# 2: 19.06 eV 0.58 eV 9378.59 cts 19.97%# 3: 19.62 eV 0.94 eV 5486.33 cts 11.68%# 4: 20.61 eV 1.04 eV 6324.78 cts 13.47%# 5: 21.40 eV 1.21 eV 11767.77 cts 25.05%11 iterations, chi square = 1.3391

Ga (3d)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 80:20

Ga 0

BE =18.6 eV

Ga2OGa 2O3

BE =20.6eV

Ga(OH)3

BE =21.4 eV

Page 460: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

GALLIUM - Naturally Formed Native Oxide native GaOxE

l e c t r o n C

o u n t s

Binding Energy (eV)

3500

542 522538 534 530 526

Baseline: 536.75 to 528.20 eV# 1: 531.48 eV 1.50 eV 50938.44 cts 44.80%# 2: 532.71 eV 1.56 eV 48463.68 cts 42.63%# 3: 533.92 eV 1.51 eV 14287.19 cts 12.57%5 iterations, chi square = 2.7391

O (1s)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 80:20

Ga2O3

BE =531.5 eV

Page 461: Vol 1 - XPS of Elements & Native Oxides - 1999

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GALLIUM - Naturally Formed Native Oxide native GaOxE

l e c t r o n C

o u n t s

Binding Energy (eV)

2000

297 277293 289 285 281

Baseline: 292.37 to 283.12 eV# 1: 286.12 eV 1.13 eV 28973.09 cts 79.93%# 2: 286.99 eV 1.05 eV 4661.03 cts 12.86%# 3: 289.46 eV 1.45 eV 2614.28 cts 7.21%17 iterations, chi square = 1.8703

C (1s)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 80:20

(1.12 eV above 285.0 eV)

Differential charging mightbe present in carbon andoxide layers. Pure metalBEs should not be affected.

C-C,C-R

COH,COR

COOH,COOR

Page 462: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

GERMANIUM - Naturally Formed Native Oxide native GeOx

Detailed Surface Composition Table

Description: NATIVE GERMANIUM OXIDE / GERMANIUM (Ge) CRYSTAL (90 DEG TOA)Date: Fri May 13 1988

Corrected Exper. Sens Norm Relative Signal BE BE Factor Area Area Atom % O Auger 978.2 978.2 0.00 36310 0 O loss 553.3 553.3 0.00 16608 0 * O 1s 532.4 532.4 2.22 89245 40182 34.69 Ge Auger 451.0 451.0 0.00 12173 0 Ge Auger 444.0 444.0 0.00 23711 0 Ge Auger 412.1 412.1 0.00 26264 0 Ge Auger 375.0 374.9 0.00 12051 0 Ge Auger 361.2 361.1 0.00 16743 0 Ge Auger 341.8 341.7 0.00 156845 0 Ge Auger 328.5 328.4 0.00 6783 0 Ge Auger 310.6 310.5 0.00 85408 0 * C 1s 285.0 285.0 1.00 49072 49090 42.38 Ge loss 198.4 198.4 0.00 10477 0 Ge3s 181.5 181.5 1.36 33183 24440 Ge loss 142.2 142.1 11.45 27377 2391 * Ge3p 124.7 124.7 4.10 108909 26565 22.93 Ge loss 46.1 46.1 0.00 22583 0 Ge3d 32.3 32.3 1.78 60797 34064

Page 463: Vol 1 - XPS of Elements & Native Oxides - 1999

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GERMANIUM - Naturally Formed Native Oxide native GeOxE

lect

ron

Cou

nts

Binding Energy (eV)

85000

1000 0800 600 400 200

O(A

uger

)

O lo

ss

O

(1s)

Ge(

Aug

er)

Ge(

Aug

er)

Ge(

Aug

er)

Ge(

Aug

er)

Ge(

Aug

er)

Ge(

Aug

er)

Ge(

Aug

er)

Ge(

Aug

er)

C(1

s)

Ge

loss

G

e(3s

)

Ge

loss

G

e (3

p)

Ge

loss

G

e(3d

)

Wide Scan Survey SpectrumCharge Neutralizer OFF

Page 464: Vol 1 - XPS of Elements & Native Oxides - 1999

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GERMANIUM - Naturally Formed Native Oxide native GeOxE

l e c t r o n C

o u n t s

Binding Energy (eV)

6000

42 2238 34 30 26

Baseline: 37.14 to 28.12 eV# 1: 30.15 eV 0.73 eV 46009.39 cts 27.43%# 2: 30.74 eV 0.71 eV 30767.76 cts 18.34%# 3: 31.50 eV 1.14 eV 6168.06 cts 3.68%# 4: 33.02 eV 1.01 eV 10573.90 cts 6.30%# 5: 33.81 eV 1.44 eV 74210.66 cts 44.24%3 iterations, chi square = 1.4168

Ge (3d)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 80:20

GeO2

BE =33.8 eV

GeO

Ge 0

BE =30.1 eV

Page 465: Vol 1 - XPS of Elements & Native Oxides - 1999

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GERMANIUM - Naturally Formed Native Oxide native GeOxE

l e c t r o n C

o u n t s

Binding Energy (eV)

10000

542 522538 534 530 526

Baseline: 537.37 to 528.90 eV# 1: 531.63 eV 1.59 eV 37722.69 cts 15.79%# 2: 532.66 eV 1.40 eV 133268.69 cts 55.80%# 3: 533.28 eV 1.41 eV 60664.78 cts 25.40%# 4: 534.46 eV 1.17 eV 7186.45 cts 3.01%3 iterations, chi square = 2.2000

O (1s)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 80:20

GeO2

BE =532.7 eV

GeOBE =531.6 eV

Page 466: Vol 1 - XPS of Elements & Native Oxides - 1999

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GERMANIUM - Naturally Formed Native Oxide native GeOxE

l e c t r o n C

o u n t s

Binding Energy (eV)

3800

297 277293 289 285 281

Baseline: 292.14 to 283.04 eV# 1: 285.69 eV 1.24 eV 62209.15 cts 68.37%# 2: 286.67 eV 1.19 eV 14605.58 cts 16.05%# 3: 287.77 eV 1.17 eV 7631.92 cts 8.39%# 4: 289.07 eV 1.20 eV 3379.96 cts 3.71%# 5: 290.08 eV 1.22 eV 3168.83 cts 3.48%3 iterations, chi square = 2.0477

C (1s)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 80:20

(0.69 eV above 285.0 eV)

Differential charging mightbe present in carbon andoxide layers. Pure metalBEs should not be affected.

C-C,C-R

COH,COR

COOH,COORCO3 ?

Page 467: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

HAFNIUM - Naturally Formed Native Oxide native HfOx

Detailed Surface Composition Table

Description: NATIVE HAFNIUM OXIDE / HAFNIUM (Hf) “SPONGE” (90 DEG TOA, FILED MANY MONTHS AGO)Date: Mon Jun 6 1988

Corrected Exper. Sens Norm Relative Signal BE BE Factor Area Area Atom % O Auger 977.7 977.7 0.00 53051 0 O loss 549.7 549.7 0.00 14156 0 * O 1s 531.4 531.4 2.93 130693 44605 50.43 Hf4p1 439.9 439.9 2.06 29810 14471 Hf loss 400.3 400.3 1.80 10250 5694 Hf4p3 382.6 382.6 4.88 80696 16536 * C 1s 285.6 285.6 1.00 28284 28284 31.98 Hf loss 240.8 240.8 0.00 8384 0 Hf4d3 224.3 224.3 6.13 79213 12922 * Hf4d5 213.6 213.6 8.84 125624 14211 16.07 * Zr3d 182.7 182.7 7.04 9526 1353 1.53 Hf5s 64.9 64.9 0.34 14553 42305 Hf5p 32.7 32.7 0.14 70087 500621 Hf4f 17.6 17.6 7.52 179973 23933

Page 468: Vol 1 - XPS of Elements & Native Oxides - 1999

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HAFNIUM - Naturally Formed Native Oxide native HfOxE

lect

ron

Cou

nts

Binding Energy (eV)

30000

1000 0800 600 400 200

O(A

uger

)

O lo

ss

O

(1s)

Hf(

4p1)

Hf l

oss

H

f(4p

3)

C(1

s)

Hf l

oss

H

f(4d

3) Hf(

4d5)

Zr(

3d)

Hf(

5s) H

f (5p

)

Hf(

4f)

Wide Scan Survey SpectrumCharge Neutralizer OFF

Page 469: Vol 1 - XPS of Elements & Native Oxides - 1999

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HAFNIUM - Naturally Formed Native Oxide native HfOxE

l e c t r o n C

o u n t s

Binding Energy (eV)

11000

28 824 20 16 12

Baseline: 23.45 to 13.41 eV# 1: 14.39 eV 0.63 eV 17406.98 cts 5.01%# 2: 15.00 eV 0.63 eV 4368.14 cts 1.26%# 3: 15.70 eV 0.63 eV 3258.49 cts 0.94%# 4: 16.12 eV 0.63 eV 13925.59 cts 4.01%# 5: 16.85 eV 0.63 eV 4544.43 cts 1.31%# 6: 17.56 eV 0.63 eV 2720.62 cts 0.78%# 7: 18.25 eV 1.23 eV 167713.53 cts 48.28%# 8: 19.91 eV 1.28 eV 133409.59 cts 38.41%10 iterations, chi square = 1.9961

Hf (4f)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 80:20

Hf (4f 7/2)Hf 0

BE =14.4 eV

HfO2

BE =18.2 eV

Hf (4f 5/2)Hf 0

BE =16.1 eV

HfOx

BE =15.0 eV

Page 470: Vol 1 - XPS of Elements & Native Oxides - 1999

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HAFNIUM - Naturally Formed Native Oxide native HfOxE

l e c t r o n C

o u n t s

Binding Energy (eV)

32000

542 522538 534 530 526

Baseline: 536.90 to 527.65 eV# 1: 531.46 eV 1.33 eV 546984.13 cts 67.29%# 2: 532.64 eV 1.30 eV 178951.56 cts 22.01%# 3: 533.63 eV 1.25 eV 86980.86 cts 10.70%3 iterations, chi square = 4.5814

O (1s)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 80:20

HfO2

BE =531.5 eV

Page 471: Vol 1 - XPS of Elements & Native Oxides - 1999

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HAFNIUM - Naturally Formed Native Oxide native HfOxE

l e c t r o n C

o u n t s

Binding Energy (eV)

3000

297 277293 289 285 281

Baseline: 291.67 to 283.35 eV# 1: 286.21 eV 1.45 eV 47613.69 cts 73.47%# 2: 287.28 eV 1.19 eV 6032.10 cts 9.31%# 3: 288.41 eV 1.40 eV 4108.94 cts 6.34%# 4: 289.93 eV 1.27 eV 7054.62 cts 10.89%4 iterations, chi square = 2.7845

C (1s)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 80:20

(1.21 eV above 285.0 eV)

Differential charging mightbe present in carbon andoxide layers. Pure metalBEs should not be affected.

C-C,C-R

COH,COR

COOH,COOR

Page 472: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

INDIUM - Naturally Formed Native Oxide native InOx

Detailed Surface Composition Table

Description: NATIVE INDIUM OXIDE / INDIUM (In) SHEET (AS RECEIVED, 90 DEG TOA)Date: Fri May 20 1988

Corrected Exper. Sens Norm Relative Signal BE BE Factor Area Area Atom % O Auger 976.2 976.2 0.00 26551 0 In3s 828.7 828.7 3.16 9495 3005 In3p1 704.2 704.2 4.40 41832 9507 In loss 683.8 683.8 4.43 17903 4041 In3p3 666.2 666.2 8.93 90923 10182 O loss 548.1 548.1 0.00 35320 0 * O 1s 531.3 531.3 2.93 89321 30485 24.57 In loss 467.6 467.6 0.00 120169 0 * In3d 444.5 444.5 22.54 415686 18442 14.87 * N 1s 399.5 399.5 1.80 3469 1927 1.55 * C 1s 284.7 284.7 1.00 71687 71687 57.79 Cl2s 269.0 269.0 1.69 2778 1643 * Cl2p 198.5 198.5 2.29 3460 1514 1.22 In4s 122.6 122.6 0.74 11609 15645 In4p 78.1 78.1 2.45 19500 7959 In4d 17.1 17.1 2.28 74390 32627

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INDIUM - Naturally Formed Native Oxide native InOxE

lect

ron

Cou

nts

Binding Energy (eV)

150000

1000 0800 600 400 200

O(A

uger

)

In(3

s)

In(3

p1)

In lo

ss

In(3

p3)

O lo

ss

O

(1s)

In lo

ss

In(3

d)

N(1

s)

C(1

s)C

l(2s)

Cl(2

p)

In(4

s)

In(4

p)

In(4

d)

Wide Scan Survey SpectrumCharge Neutralizer OFF

Chlorine (Cl) and nitrogen (N)contaminants are attributed to gases.

Page 474: Vol 1 - XPS of Elements & Native Oxides - 1999

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INDIUM - Naturally Formed Native Oxide native InOxE

l e c t r o n C

o u n t s

Binding Energy (eV)

50000

450 440448 446 444 442

Baseline: 448.98 to 441.84 eV# 1: 443.63 eV 0.80 eV 68718.83 cts 3.30%# 2: 444.44 eV 1.13 eV 564794.31 cts 27.12%# 3: 445.18 eV 1.33 eV 1072225.75 cts 51.48%# 4: 445.86 eV 1.27 eV 377086.34 cts 18.10%3 iterations, chi square = 2.4923

In (3d 5/2)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 80:20

In 0

BE = 443.6 eV

In 2OBE = 444.4 eV

In 2O3

BE = 445.2 eV

In(OH)3

BE = 445.9 eV

Page 475: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

INDIUM - Naturally Formed Native Oxide native InOxE

l e c t r o n C

o u n t s

Binding Energy (eV)

14000

542 522538 534 530 526

Baseline: 537.06 to 526.31 eV# 1: 530.19 eV 1.28 eV 164685.36 cts 31.99%# 2: 531.41 eV 1.20 eV 109230.92 cts 21.22%# 3: 532.26 eV 1.21 eV 153919.25 cts 29.90%# 4: 533.08 eV 1.76 eV 86994.40 cts 16.90%5 iterations, chi square = 2.6476

O (1s)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 80:20

In 2O3

BE = 530.2 eV

Page 476: Vol 1 - XPS of Elements & Native Oxides - 1999

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INDIUM - Naturally Formed Native Oxide native InOxE

l e c t r o n C

o u n t s

Binding Energy (eV)

8000

296 276292 288 284 280

Baseline: 291.53 to 282.67 eV# 1: 285.46 eV 1.19 eV 129560.47 cts 80.15%# 2: 286.39 eV 1.19 eV 16535.94 cts 10.23%# 3: 287.92 eV 1.34 eV 4833.64 cts 2.99%# 4: 289.38 eV 1.50 eV 10718.38 cts 6.63%3 iterations, chi square = 1.8576

C (1s)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 80:20

(0.46 eV above 285.0 eV)

Differential charging mightbe present in carbon andoxide layers. Pure metalBEs should not be affected.

C-C,C-R

COH,COR

COOH,COOR

Page 477: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

IRIDIUM - Naturally Formed Native Oxide native IrOx

Detailed Surface Composition Table

Description: NATIVE IRIDIUM OXIDE / IRIDIUM (Ir) WIRE (90 DEG TOA, AS RECEIVED)Date: Tue Jun 7 1988

Corrected Exper. Sens Norm Relative Signal BE BE Factor Area Area Atom % O Auger 977.8 977.8 0.00 13267 0 O loss 554.4 554.4 0.00 15261 0 * O 1s 532.3 532.3 2.93 47765 16302 18.68 Ir4p3 495.2 495.2 5.59 14870 2660 * N 1s 399.6 399.6 1.80 3993 2219 2.54 Ir4d3 311.5 311.5 7.51 22769 3032 Ir4d5 296.1 296.1 10.90 20962 1923 * C 1s 284.8 284.8 1.00 63737 63737 73.03 ? 119.1 119.1 0.00 3741 8502 * Ir4f 59.8 59.8 13.90 69747 5018 5.75 Ir5p3 47.2 47.2 0.97 3785 3914 O 2s 24.2 24.2 0.14 1817 12978

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IRIDIUM - Naturally Formed Native Oxide native IrOxE

lect

ron

Cou

nts

Binding Energy (eV)

50000

1000 0800 600 400 200

O(A

uger

) O lo

ss

O(1

s)

Ir(4

p3)

N(1

s)

Ir(4

d3)

Ir(4

d5)

C(1

s)

?

Ir(4

f)Ir

(5p3

)

O(2

s)

Wide Scan Survey SpectrumCharge Neutralizer OFF

Page 479: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

IRIDIUM - Naturally Formed Native Oxide native IrOxE

l e c t r o n C

o u n t s

Binding Energy (eV)

7000

74 5470 66 62 58

Baseline: 68.75 to 58.31 eV# 1: 60.86 eV 0.78 eV 63365.65 cts 41.93%# 2: 61.69 eV 0.77 eV 12718.01 cts 8.41%# 3: 62.67 eV 0.95 eV 8015.24 cts 5.30%# 4: 63.84 eV 0.76 eV 46111.48 cts 30.51%# 5: 64.56 eV 0.82 eV 11141.32 cts 7.37%# 6: 65.45 eV 1.78 eV 9787.39 cts 6.48%6 iterations, chi square = 1.9610

Ir (4f)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 80:20

IrO2

BE = 62.7 eV

Ir 0

BE = 60.8 eV

IrOx

BE = 61.7eV

Page 480: Vol 1 - XPS of Elements & Native Oxides - 1999

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IRIDIUM - Naturally Formed Native Oxide native IrOxE

l e c t r o n C

o u n t s

Binding Energy (eV)

4000

542 522538 534 530 526

Baseline: 537.84 to 526.94 eV# 1: 530.69 eV 1.37 eV 13795.56 cts 12.20%# 2: 531.72 eV 1.17 eV 29961.13 cts 26.50%# 3: 532.70 eV 1.25 eV 50057.44 cts 44.27%# 4: 533.66 eV 1.24 eV 19246.66 cts 17.02%6 iterations, chi square = 2.6770

O (1s)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 80:20

IrO2

BE = 530.7 eV

Page 481: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

IRIDIUM - Naturally Formed Native Oxide native IrOxE

l e c t r o n C

o u n t s

Binding Energy (eV)

6000

297 277293 289 285 281

Baseline: 291.12 to 281.78 eV# 1: 285.28 eV 1.41 eV 79781.63 cts 65.95%# 2: 286.01 eV 1.23 eV 31280.53 cts 25.86%# 3: 287.60 eV 1.31 eV 4390.71 cts 3.63%# 4: 289.29 eV 1.33 eV 5515.13 cts 4.56%5 iterations, chi square = 2.6121

C (1s)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 80:20

(0.28 eV above 285.0 eV)

C-C,C-R

COH,COR

COOH,COOR

Page 482: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

LUTETIUM - Naturally Formed Native Oxide native LuOx

Detailed Surface Composition Table

Description: Native Lutetium Oxide / Lutetium (Lu) Chunk 35 DEG TOA, as received

Date: Tue Mar 16 1993

Corrected Exper. Sens Norm Relative Signal BE BE Factor Area Area Atom % O Auger 977.8 978.3 0.00 8566 0 O loss 549.6 550.1 0.00 8080 0 * O 1s 531.9 532.4 2.22 45770 20608 47.90 Lu4s 508.7 509.2 1.35 7516 5569 Lu4p1 413.0 413.5 1.77 8857 4999 Lu4p3 359.8 360.3 4.38 29994 6841 * C 1s 285.0 285.5 1.00 14950 14964 34.78 Lu4d3 206.6 207.1 6.33 28370 4484 Lu4d5 196.8 197.3 9.20 47089 5120 Lu loss 58.1 58.7 0.07 6197 88419 Lu5p 27.6 28.2 1.20 33333 27850 * Lu4f 8.5 9.1 8.33 62033 7450 17.32

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LUTETIUM - Naturally Formed Native Oxide native LuOxE

lect

ron

Cou

nts

Binding Energy (eV)

20000

1000 0800 600 400 200

O(A

uger

)

O lo

ss

O

(1s)

Lu(4

s) Lu(4

p1)

Lu(4

p3)

C(1

s)

Lu(4

d3) Lu

(4d5

)

Lu lo

ss Lu(5

p)Lu

(4f)

Wide Scan Survey SpectrumCharge Neutralizer OFF

Page 484: Vol 1 - XPS of Elements & Native Oxides - 1999

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LUTETIUM - Naturally Formed Native Oxide native LuOxE

l e c t r o n C

o u n t s

Binding Energy (eV)

5000

15 -511 7 3 -1

Baseline: 14.60 to 2.25 eV# 1: 8.89 eV 1.65 eV 163999.38 cts 52.89%# 2: 10.30 eV 1.40 eV 111354.60 cts 35.91%# 3: 11.51 eV 1.65 eV 34738.64 cts 11.20%6 iterations, chi square = 3.4653

Lu (4f)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 80:20

Lu2O3

BE = 8.9 eV

Lu 0

BE = 7.1 eVValence bands

Page 485: Vol 1 - XPS of Elements & Native Oxides - 1999

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LUTETIUM - Naturally Formed Native Oxide native LuOxE

l e c t r o n C

o u n t s

Binding Energy (eV)

3000

542 522538 534 530 526

Baseline: 538.70 to 525.25 eV# 1: 530.62 eV 1.73 eV 65170.67 cts 37.17%# 2: 532.65 eV 1.71 eV 82878.06 cts 47.26%# 3: 534.22 eV 1.85 eV 27304.85 cts 15.57%15 iterations, chi square = 2.2805

O (1s)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 80:20

Lu2O3

BE =531.7 eV

Page 486: Vol 1 - XPS of Elements & Native Oxides - 1999

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LUTETIUM - Naturally Formed Native Oxide native LuOxE

l e c t r o n C

o u n t s

Binding Energy (eV)

600

296 276292 288 284 280

Baseline: 294.25 to 281.25 eV# 1: 285.83 eV 1.63 eV 16901.81 cts 75.76%# 2: 287.48 eV 2.08 eV 3333.34 cts 14.94%# 3: 291.20 eV 1.69 eV 2074.35 cts 9.30%5 iterations, chi square = 2.5986

C (1s)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 80:20

(0.83 eV above 285.0 eV)

Differential charging mightbe present in carbon andoxide layers. Pure metalBEs should not be affected.

C-C,C-R

COH,CORCO3

Page 487: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

MAGNESIUM - Naturally Formed Native Oxide (Freshly Made) native MgOx

Detailed Surface Composition Table

Description: NATIVE MAGNESIUM OXIDE / MAGNESIUM (Mg) RIBBON 90 DEG TOA, SCRAPED CLEAN, EXPOSED TO AIR FOR 5 MINUTES

Date: Wed Jun 1 1988

Corrected Exper. Sens Norm Relative Signal BE BE Factor Area Area Atom % O Auger 979.1 979.1 0.00 56828 0 O loss 556.0 556.0 0.00 26309 0 * O 1s 532.9 532.9 2.93 128713 43929 30.70 Mg Auger 379.7 379.7 0.00 10680 0 Mg Auger 368.2 368.2 0.00 9221 0 Mg Auger 352.1 352.1 0.00 49833 0 Mg Auger 332.2 332.2 0.00 23966 0 Mg Auger 322.4 322.4 0.00 25483 0 Mg Auger 306.3 306.3 4.10 160029 39031 * C 1s 285.9 285.9 1.00 27019 27019 18.88 Mg Auger 235.4 235.4 0.00 3994 0 Mg loss 122.2 122.2 0.00 2870 0 Mg loss 109.6 109.6 0.00 7368 0 Mg loss 98.9 98.9 0.00 10286 0 * Mg2s 88.6 88.6 0.57 41119 72139 50.42 Mg loss 70.6 70.6 0.00 3999 0 Mg loss 59.9 59.9 0.00 6248 0 Mg2p 49.4 49.4 0.33 24054 72891 O 2s 24.2 24.2 0.14 7932 56658

Page 488: Vol 1 - XPS of Elements & Native Oxides - 1999

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MAGNESIUM - Naturally Formed Native Oxide (Freshly Made) native MgOxE

lect

ron

Cou

nts

Binding Energy (eV)

33000

1000 0800 600 400 200

O(A

uger

)

O lo

ss

O(1

s)

Mg(

Aug

er)

Mg(

Aug

er)

Mg(

Aug

er)

Mg(

Aug

er)

Mg(

Aug

er)

Mg(

Aug

er)

C(1

s)

Ar(

2p)

Mg(

Aug

er)

Mg

loss

M

g lo

ss

Mg

loss

Mg(

2s)

Mg

loss

M

g lo

ss

Mg(

2p)

O(2

s)O

(2p)

Wide Scan Survey SpectrumCharge Neutralizer OFF

Page 489: Vol 1 - XPS of Elements & Native Oxides - 1999

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MAGNESIUM - Naturally Formed Native Oxide (Freshly Made) native MgOxE

l e c t r o n C

o u n t s

Binding Energy (eV)

1300

56 4654 52 50 48

Baseline: 54.47 to 48.08 eV# 1: 49.81 eV 0.57 eV 15656.10 cts 28.33%# 2: 50.27 eV 0.66 eV 4643.93 cts 8.40%# 3: 51.15 eV 1.50 eV 27688.25 cts 50.11%# 4: 51.93 eV 1.51 eV 7266.09 cts 13.15%3 iterations, chi square = 1.1674

Mg (2p)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 80:20

MgOBE = 51.1 eV

Mg 0

BE = 49.8 eV

Might be due to ahydrated Mg(1+) ora suboxide species.

Mg(OH)2

BE = 51.9 eV(MgCO3 ?)

Page 490: Vol 1 - XPS of Elements & Native Oxides - 1999

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MAGNESIUM - Naturally Formed Native Oxide (Freshly Made) native MgOxE

l e c t r o n C

o u n t s

Binding Energy (eV)

15000

542 522538 534 530 526

Baseline: 537.84 to 528.35 eV# 1: 530.94 eV 1.10 eV 46456.25 cts 9.90%# 2: 531.78 eV 1.43 eV 80822.09 cts 17.22%# 3: 533.17 eV 1.40 eV 266311.06 cts 56.73%# 4: 534.16 eV 1.40 eV 75830.55 cts 16.15%3 iterations, chi square = 3.4411

O (1s)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 80:20

MgOBE = 530.9 eV

Mg(OH)2

BE = 531.8 eV

MgCO3

BE = 533.2 eV

Page 491: Vol 1 - XPS of Elements & Native Oxides - 1999

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MAGNESIUM - Naturally Formed Native Oxide (Freshly Made) native MgOxE

l e c t r o n C

o u n t s

Binding Energy (eV)

3000

297 277293 289 285 281

Baseline: 294.33 to 280.61 eV# 1: 286.52 eV 1.30 eV 43894.76 cts 55.62%# 2: 287.66 eV 1.27 eV 10691.52 cts 13.55%# 3: 289.01 eV 1.43 eV 3499.79 cts 4.44%# 4: 290.68 eV 1.26 eV 10830.61 cts 13.72%# 5: 291.70 eV 1.17 eV 9995.52 cts 12.67%5 iterations, chi square = 3.4181

C (1s)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 80:20

(1.52 eV above 285.0 eV)

Differential charging mightbe present in carbon andoxide layers. Pure metalBEs should not be affected.

C-C,C-R

COH,CORCO3

carbide

COOH,COOR

Page 492: Vol 1 - XPS of Elements & Native Oxides - 1999

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MANGANESE - Naturally Formed Native Oxide native MnOx

Detailed Surface Composition Table

Description: NATIVE MANGANESE OXIDE / MANGANESE (Mn) FLAKE AS RECEIVED, 90 DEG TOADate: Mon Jun 6 1988

Corrected Exper. Sens Norm Relative Signal BE BE Factor Area Area Atom % O Auger 975.9 975.9 0.00 41376 0 MnAuger 949.1 949.1 0.00 18779 0 MnAuger 902.5 902.5 0.00 58444 0 MnAuger 851.3 851.3 0.00 17397 0 Mn2s 772.2 772.2 4.23 30289 7161 Mn loss 662.8 662.8 0.00 5647 0 Mn2p1 653.5 653.5 4.74 62898 13270 * Mn2p3 641.8 641.8 9.17 142857 15579 18.18 O loss 552.0 552.0 0.00 7566 0 * O 1s 530.0 530.0 2.93 131748 44965 52.47 * C 1s 284.2 284.2 1.00 25151 25151 29.35 Mn3s 82.6 82.6 0.67 18130 26899 Mn loss 66.8 66.8 0.00 8444 0 Mn3p 47.8 47.8 1.42 33334 23425 O 2s 21.1 21.1 0.14 8186 58472

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MANGANESE - Naturally Formed Native Oxide native MnOxE

lect

ron

Cou

nts

Binding Energy (eV)

23000

1000 0800 600 400 200

O(A

uger

)

Mn(

Aug

er)

Mn(

Aug

er)

Mn(

Aug

er)

Mn(

2s)

Mn

loss

M

n(2p

1)M

n(2p

3)

O lo

ss

O

(1s)

C(1

s)

Mn(

3s)

Mn

loss

Mn(

3p)

O(2

s)

Wide Scan Survey SpectrumCharge Neutralizer OFF

Page 494: Vol 1 - XPS of Elements & Native Oxides - 1999

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MANGANESE - Naturally Formed Native Oxide native MnOxE

l e c t r o n C

o u n t s

Binding Energy (eV)

60000

665 635659 653 647 641

Baseline: 649.47 to 637.24 eV# 1: 639.96 eV 1.17 eV 142727.08 cts 8.68%# 2: 641.08 eV 1.41 eV 562036.38 cts 34.19%# 3: 642.34 eV 1.43 eV 481582.75 cts 29.29%# 4: 643.65 eV 1.47 eV 266233.47 cts 16.19%# 5: 645.03 eV 1.48 eV 126095.04 cts 7.67%# 6: 646.50 eV 1.77 eV 65370.58 cts 3.98%3 iterations, chi square = 4.7568

Mn (2p 3/2)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 80:20

Mn0

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MANGANESE - Naturally Formed Native Oxide native MnOxE

l e c t r o n C

o u n t s

Binding Energy (eV)

16000

542 522538 534 530 526

Baseline: 537.76 to 526.86 eV# 1: 530.01 eV 1.11 eV 214842.56 cts 55.24%# 2: 531.19 eV 1.34 eV 102232.57 cts 26.29%# 3: 532.27 eV 1.26 eV 39217.02 cts 10.08%# 4: 533.56 eV 2.16 eV 32628.79 cts 8.39%25 iterations, chi square = 2.4974

O (1s)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 80:20

MnOx

BE = 530.0 eV

Page 496: Vol 1 - XPS of Elements & Native Oxides - 1999

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MANGANESE - Naturally Formed Native Oxide native MnOxE

l e c t r o n C

o u n t s

Binding Energy (eV)

2400

297 277293 289 285 281

Baseline: 292.22 to 280.84 eV# 1: 284.84 eV 1.41 eV 41189.09 cts 68.12%# 2: 286.04 eV 1.35 eV 8651.38 cts 14.31%# 3: 286.88 eV 1.40 eV 3121.46 cts 5.16%# 4: 288.31 eV 1.86 eV 7507.26 cts 12.42%4 iterations, chi square = 1.7625

C (1s)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 80:20

(0.16 eV below 285.0 eV)

C-C,C-R

COH,COR

CO3 ?

Page 497: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

MOLYBDENUM - Naturally Formed Native Oxide native MoOx

Detailed Surface Composition Table

Description: NATIVE MOLYBDENUM OXIDE / MOLYBDENUM (Mo) SHEET 90 DEG TOA, AS RECEIVEDDate: Fri May 20 1988

Corrected Exper. Sens Norm Relative Signal BE BE Factor Area Area Atom % O Auger 975.1 975.1 0.00 19521 0 O loss 545.3 545.3 0.00 13160 0 * O 1s 530.4 530.4 2.93 54757 18689 31.00 Mo3s 509.6 509.6 2.34 9409 4021 Mo loss 437.3 437.3 0.00 3194 0 Mo3p1 415.4 415.4 3.04 30565 10054 Mo3p3 398.0 398.0 5.94 45342 7633 * C 1s 284.1 284.1 1.00 32037 32037 53.14 Mo loss 252.4 252.4 0.00 31375 0 * Mo3d 231.6 231.6 9.50 90864 9565 15.86 Pb4f 137.1 137.1 22.74 2242 99 Mo4s 65.5 65.5 0.44 6615 15033 Mo4p 39.1 39.1 1.31 14018 10701 O 2s 20.7 20.7 0.14 4009 28639

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MOLYBDENUM - Naturally Formed Native Oxide native MoOxE

lect

ron

Cou

nts

Binding Energy (eV)

75000

1000 0800 600 400 200

O(A

uger

)

O lo

ss

O

(1s)

Mo(

3s)

Mo

loss

M

o(3p

1)M

o(3p

3)

C(1

s)

Mo

loss

M

o(3d

)

Pb(

4f)

Mo(

4s)

Mo(

4p)

O(2

s)

Wide Scan Survey SpectrumCharge Neutralizer OFF

Page 499: Vol 1 - XPS of Elements & Native Oxides - 1999

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MOLYBDENUM - Naturally Formed Native Oxide native MoOxE

l e c t r o n C

o u n t s

Binding Energy (eV)

20000

242 222238 234 230 226

Baseline: 238.78 to 225.53 eV# 1: 227.79 eV 0.57 eV 68814.08 cts 13.54%# 2: 228.40 eV 0.89 eV 32018.73 cts 6.30%# 3: 229.51 eV 0.63 eV 8738.00 cts 1.72%# 4: 230.58 eV 0.63 eV 13325.24 cts 2.62%# 5: 231.04 eV 0.69 eV 45323.93 cts 8.92%# 6: 231.68 eV 0.63 eV 15316.55 cts 3.01%# 7: 234.46 eV 0.63 eV 425.51 cts 0.08%# 8: 232.36 eV 0.80 eV 25928.98 cts 5.10%# 9: 232.70 eV 1.12 eV 179234.31 cts 35.27%#10: 235.79 eV 1.09 eV 119046.62 cts 23.43%5 iterations, chi square = 2.4075

Mo (3d)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 80:20MoO3

BE = 232.7 eV

Mo 0

BE = 227.8 eVMoO2

BE = 230.6 eV

MoxOy (1)BE = 228.4 eV

MoxOy (2)BE = 229.5 eV

Page 500: Vol 1 - XPS of Elements & Native Oxides - 1999

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MOLYBDENUM - Naturally Formed Native Oxide native MoOxE

l e c t r o n C

o u n t s

Binding Energy (eV)

17000

542 522538 534 530 526

Baseline: 537.29 to 526.94 eV# 1: 530.56 eV 1.47 eV 314253.22 cts 69.29%# 2: 532.05 eV 1.37 eV 90310.70 cts 19.91%# 3: 533.20 eV 1.39 eV 48938.18 cts 10.79%29 iterations, chi square = 2.8289

O (1s)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 80:20

MoO3

BE = 530.6 eV

Page 501: Vol 1 - XPS of Elements & Native Oxides - 1999

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MOLYBDENUM - Naturally Formed Native Oxide native MoOxE

l e c t r o n C

o u n t s

Binding Energy (eV)

3200

297 277293 289 285 281

Baseline: 290.73 to 281.39 eV# 1: 284.87 eV 1.30 eV 52709.46 cts 65.83%# 2: 286.27 eV 1.34 eV 19322.43 cts 24.13%# 3: 287.64 eV 1.37 eV 5430.94 cts 6.78%# 4: 288.92 eV 1.40 eV 2603.33 cts 3.25%5 iterations, chi square = 1.7941

C (1s)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 80:20

(0.13 eV below 285.0 eV)

C-C,C-R

COH,COR

CO3 ?COOH,COOR

Page 502: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

NIOBIUM - Naturally Formed Native Oxide native NbOx

Detailed Surface Composition Table

Description: NATIVE NIOBIUM OXIDE / NIOBIUM (Nb) SHEET 35 DEG TOA, AS RECEIVEDDate: Thu Mar 11 1993

Corrected Exper. Sens Norm Relative Signal BE BE Factor Area Area Atom % O Auger 976.2 976.2 0.00 8251 0 * F 1s 690.3 690.3 2.71 4139 1529 3.33 * O 1s 531.0 531.0 2.22 47574 21382 46.62 Nb loss 496.7 496.7 0.00 6692 0 Nb3p1 381.4 381.4 2.57 16813 6547 Nb3p3 365.9 365.9 5.08 24349 4789 * C 1s 285.5 285.5 1.00 16891 16906 36.86 Nb loss 224.1 224.1 0.00 7884 0 * Nb3d 207.3 207.3 8.85 53516 6049 13.19 Nb4s 61.0 61.0 0.49 2957 5994 Nb4p 35.3 35.3 1.47 8617 5875 O 2s 22.1 22.1 0.18 2006 11306

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NIOBIUM - Naturally Formed Native Oxide native NbOxE

lect

ron

Cou

nts

Binding Energy (eV)

5000

1000 0800 600 400 200

O(A

uger

)

F(1

s)

O(1

s)

Nb

loss

Nb(

3p1)

Nb(

3p3)

C(1

s)

Nb

loss

N

b(3d

)

Nb(

4s)

Nb(

4p)

O(2

s)O

(2p)

Wide Scan Survey SpectrumCharge Neutralizer OFF

Page 504: Vol 1 - XPS of Elements & Native Oxides - 1999

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NIOBIUM - Naturally Formed Native Oxide native NbOxE

l e c t r o n C

o u n t s

Binding Energy (eV)

10000

218 198214 210 206 202

Baseline: 212.98 to 201.06 eV# 1: 202.39 eV 0.94 eV 4752.32 cts 1.74%# 2: 203.27 eV 1.20 eV 9103.25 cts 3.33%# 3: 204.34 eV 1.19 eV 11188.82 cts 4.09%# 4: 205.00 eV 0.94 eV 4538.74 cts 1.66%# 5: 205.90 eV 1.20 eV 13016.12 cts 4.76%# 6: 206.90 eV 1.20 eV 9375.25 cts 3.43%# 7: 207.45 eV 1.18 eV 132862.28 cts 48.55%# 8: 210.18 eV 1.20 eV 88834.96 cts 32.46%10 iterations, chi square = 1.7893

Nb (3d)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 80:20

Nb2O5

BE = 207.4 eV

Nb 0

BE =2 02.4 eV

NbOBE = 203.3 eV

NbO2

BE = 204.3 eV

Page 505: Vol 1 - XPS of Elements & Native Oxides - 1999

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NIOBIUM - Naturally Formed Native Oxide native NbOxE

l e c t r o n C

o u n t s

Binding Energy (eV)

5500

542 522538 534 530 526

Baseline: 536.75 to 527.57 eV# 1: 530.52 eV 1.26 eV 92753.93 cts 67.88%# 2: 531.84 eV 1.31 eV 29380.29 cts 21.50%# 3: 533.02 eV 1.46 eV 14517.31 cts 10.62%3 iterations, chi square = 2.0420

O (1s)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 80:20

Nb2O5

BE = 530.5 eV

Page 506: Vol 1 - XPS of Elements & Native Oxides - 1999

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NIOBIUM - Naturally Formed Native Oxide native NbOxE

l e c t r o n C

o u n t s

Binding Energy (eV)

1200

296 276292 288 284 280

Baseline: 291.61 to 281.10 eV# 1: 285.12 eV 1.49 eV 17016.42 cts 56.19%# 2: 286.01 eV 1.31 eV 4516.68 cts 14.91%# 3: 287.08 eV 1.27 eV 2771.10 cts 9.15%# 4: 288.86 eV 1.73 eV 5980.96 cts 19.75%3 iterations, chi square = 2.0836

C (1s)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 80:20

(0.12 eV above 285.0 eV)

C-C,C-R

COH,COR

CO3

K ?

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NICKEL - Naturally Formed Native Oxide native NiOx

Detailed Surface Composition Table

Description: NATIVE NICKEL OXIDE / NICKEL (Ni) SHEET AS RECEIVED, 90 DEG TOADate: Fri May 20 1988

Corrected Exper. Sens Norm Relative Signal BE BE Factor Area Area Atom % O Auger 977.4 977.4 0.00 10465 0 Ni2p1 874.2 874.2 7.57 44991 5943 Ni2p3 856.3 856.3 14.61 71501 4894 Ni Auger 778.9 778.9 0.00 16624 0 Ni Auger 712.1 712.1 0.00 25820 0 Ni Auger 662.9 662.9 0.00 8045 0 Ni Auger 640.3 640.3 0.00 60410 0 Ni Auger 622.7 622.7 0.00 4985 0 O loss 553.4 553.4 0.00 31018 0 * O 1s 531.6 531.6 2.93 76279 26034 17.26 Na Auger 497.0 497.0 3.40 6538 1923 * N 1s 399.5 399.5 1.80 1777 987 0.65 C loss 306.2 306.2 14.19 23700 1670 * C 1s 284.7 284.7 1.00 99741 99741 66.12 * Cl2p 197.8 197.8 2.29 1518 663 0.44 * Ni3s 110.3 110.3 0.89 20851 23428 15.53 Ni loss 90.0 90.0 2.40 5269 2195 Ni3p 66.1 66.1 2.22 48154 21691 O 2s 23.7 23.7 0.14 5790 41356

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NICKEL - Naturally Formed Native Oxide native NiOxE

lect

ron

Cou

nts

Binding Energy (eV)

120000

1000 0800 600 400 200

O(A

uger

)

Ni(2

p1)

Ni(2

p3)

Ni(A

uger

)

Ni(A

uger

)

Ni(A

uger

)

Ni(A

uger

)N

i(Aug

er)

O lo

ss

O(1

s)

Na(

Aug

er)

N(1

s) C lo

ss

C

(1s)

Cl(2

p)

Ni(3

s)N

i los

s

Ni(3

p)

O(2

s)

Wide Scan Survey SpectrumCharge Neutralizer OFF

Chlorine (Cl) and nitrogen (N)are attributed to air-bornecontaminants. The sodium(Na) is attributed to lubricantsused in the rolling process.

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NICKEL - Naturally Formed Native Oxide native NiOxE

l e c t r o n C

o u n t s

Binding Energy (eV)

30000

866 846862 858 854 850

Baseline: 859.33 to 849.29 eV# 1: 852.48 eV 1.08 eV 349718.84 cts 33.40%# 2: 854.05 eV 1.50 eV 216394.05 cts 20.67%# 3: 855.23 eV 1.24 eV 140264.27 cts 13.40%# 4: 856.22 eV 1.24 eV 240296.67 cts 22.95%# 5: 857.23 eV 1.41 eV 100401.44 cts 9.59%11 iterations, chi square = 4.5969

Ni (2p 3/2)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 80:20

NiOBE = 854.0 eV

Ni 0

BE = 852.5 eV

Ni(OH)2

BE = 855.2 eV

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NICKEL - Naturally Formed Native Oxide native NiOxE

l e c t r o n C

o u n t s

Binding Energy (eV)

17000

542 522538 534 530 526

Baseline: 537.76 to 527.18 eV# 1: 529.75 eV 1.45 eV 90661.52 cts 16.06%# 2: 531.52 eV 1.28 eV 181453.92 cts 32.15%# 3: 532.47 eV 1.38 eV 229634.06 cts 40.69%# 4: 533.68 eV 1.56 eV 62614.28 cts 11.09%6 iterations, chi square = 3.2546

O (1s)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 80:20

NiOBE = 529.7 eV

Ni(OH)2

BE = 531.5 eV

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NICKEL - Naturally Formed Native Oxide native NiOxE

l e c t r o n C

o u n t s

Binding Energy (eV)

17000

296 276292 288 284 280

Baseline: 292.00 to 281.80 eV# 1: 285.40 eV 1.21 eV 261643.05 cts 74.39%# 2: 286.17 eV 1.16 eV 54431.10 cts 15.48%# 3: 287.16 eV 1.20 eV 9244.93 cts 2.63%# 4: 288.50 eV 1.13 eV 8663.84 cts 2.46%# 5: 289.37 eV 1.37 eV 17741.51 cts 5.04%5 iterations, chi square = 2.0670

C (1s)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 80:20

(0.40 eV above 285.0 eV)

C-C,C-R

COH,COR

CO3

COOH,COOR

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PHOSPHORUS - Naturally Formed Native Oxide (Shifted by Charging Effect) native POx

Detailed Surface Composition Table

Description: Native Phosphorus Oxide / Phosphorus (P) Lump Sample charges up more and more as a function of time.

Date: Fri Mar 19 1993

Corrected Exper. Sens Norm Relative Signal BE BE Factor Area Area Atom % O Auger 979.4 987.0 0.00 4971 0 O loss 555.9 563.6 0.00 19383 0 * O 1s 533.3 541.0 2.20 51648 23508 43.86 * C 1s 285.0 292.7 0.99 11978 12075 22.53 P loss 205.7 213.4 0.00 4787 0 P 2s 187.8 195.5 1.29 22086 17177 P loss 150.2 157.8 0.00 7654 0 * P 2p 130.3 138.0 1.37 24651 18013 33.61 O 2s 26.3 33.9 0.18 3219 18319 O 2p 10.1 17.8 0.02 2446 101222

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PHOSPHORUS - Naturally Formed Native Oxide (Shifted by Charging Effect) native POxE

lect

ron

Cou

nts

Binding Energy (eV)

7000

1000 0800 600 400 200

O(A

uger

)

O lo

ss

O(1

s)

C(1

s)

P lo

ss

P

(2s)

P lo

ss

P

(2p)

O(2

s)O

(2p)

Wide Scan Survey SpectrumCharge Neutralizer OFF

Page 514: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

PHOSPHORUS - Naturally Formed Native Oxide (Shifted by Charging Effect) native POxE

l e c t r o n C

o u n t s

Binding Energy (eV)

1200

150 130146 142 138 134

Baseline: 149.30 to 134.35 eV# 1: 137.29 eV 1.28 eV 7005.40 cts 9.76%# 2: 138.39 eV 1.01 eV 18998.05 cts 26.46%# 3: 139.23 eV 1.01 eV 9367.00 cts 13.05%# 4: 141.97 eV 1.46 eV 8795.17 cts 12.25%# 5: 143.06 eV 1.14 eV 13688.85 cts 19.06%# 6: 143.94 eV 1.11 eV 9082.47 cts 12.65%# 7: 144.95 eV 1.66 eV 2733.20 cts 3.81%# 8: 147.48 eV 1.63 eV 2133.87 cts 2.97%7 iterations, chi square = 1.5032

P (2p)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 80:20

POx

P 0

Sample is chargedup by >7 eV (+) andhas severedifferential charging.

Page 515: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

PHOSPHORUS - Naturally Formed Native Oxide (Shifted by Charging Effect) native POxE

l e c t r o n C

o u n t s

Binding Energy (eV)

1300

554 534550 546 542 538

Baseline: 553.25 to 540.85 eV# 1: 545.68 eV 2.00 eV 15393.29 cts 15.74%# 2: 547.08 eV 1.58 eV 23749.62 cts 24.28%# 3: 548.43 eV 1.62 eV 36523.62 cts 37.35%# 4: 549.68 eV 1.48 eV 17414.64 cts 17.81%# 5: 550.96 eV 1.31 eV 4717.06 cts 4.82%5 iterations, chi square = 1.7213

O (1s)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 80:20

Sample is chargedup by >14 eV (+)and has severedifferential charging.

Page 516: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

PHOSPHORUS - Naturally Formed Native Oxide (Shifted by Charging Effect) native POxE

l e c t r o n C

o u n t s

Binding Energy (eV)

400

312 292308 304 300 296

Baseline: 306.00 to 294.15 eV# 1: 298.49 eV 1.53 eV 3013.05 cts 18.24%# 2: 299.82 eV 1.28 eV 7430.47 cts 44.98%# 3: 301.17 eV 1.36 eV 4659.87 cts 28.21%# 4: 302.35 eV 1.18 eV 1415.54 cts 8.57%4 iterations, chi square = 2.2987

C (1s)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 80:20

Sample is chargedup by >14 eV (+)and has severedifferential charging.

Page 517: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

LEAD - Naturally Formed Native Oxide (Freshly Made) native PbOx

Detailed Surface Composition Table

Description: NATIVE LEAD OXIDE / LEAD (Pb) SHEET (FRESHLY MADE NATIVE OXIDE) 35 DEG TOA, SCRAPED CLEAN, EXPOSED TO AIR ABOUT 1 HOURDate: Mon May 30 1988

Corrected Exper. Sens Norm Relative Signal BE BE Factor Area Area Atom % O Auger 976.4 976.4 0.00 25923 0 Pb4s 894.4 894.4 1.96 7227 3687 Pb4p1 763.8 763.8 2.12 11061 5217 Pb4p3 645.4 645.4 6.33 55066 8699 O loss 555.2 555.2 0.00 19426 0 * O 1s 531.5 531.5 2.93 89849 30665 33.42 Pb loss 459.8 459.8 0.00 7957 0 Pb4d3 436.1 436.1 8.87 126411 14251 Pb4d5 413.7 413.7 13.02 160245 12308 * C 1s 285.1 285.1 1.00 42893 42893 46.75 Pb loss 161.9 161.9 0.00 86139 0 * Pb4f 138.1 138.1 22.74 413680 18192 19.83 Pb5p1 108.2 108.2 0.53 10077 19158 Pb5p3 83.6 83.6 1.33 21169 15917 Pb5d 19.0 19.0 2.69 75716 28147

Page 518: Vol 1 - XPS of Elements & Native Oxides - 1999

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LEAD - Naturally Formed Native Oxide (Freshly Made) native PbOxE

lect

ron

Cou

nts

Binding Energy (eV)

120000

1000 0800 600 400 200

O(A

uger

)

Pb(

4s)

Pb(

4p1) Pb(

4p3)

O lo

ss

O(1

s)

Pb

loss

Pb(

4d3)

Pb(

4d5)

C(1

s)

Pb

loss

Pb(

4f)

Pb(

5p1)

Pb(

5p3) P

b(5d

)O

(2p)

Wide Scan Survey SpectrumCharge Neutralizer OFF

Page 519: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

LEAD - Naturally Formed Native Oxide (Freshly Made) native PbOxE

l e c t r o n C

o u n t s

Binding Energy (eV)

4500

151 131147 143 139 135

Baseline: 141.04 to 134.84 eV# 1: 136.98 eV 0.76 eV 14464.29 cts 15.90%# 2: 138.11 eV 0.87 eV 11850.23 cts 13.03%# 3: 138.93 eV 1.18 eV 64638.93 cts 71.07%3 iterations, chi square = 1.6205

Pb (4f)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 70:30

Pb 0

BE = 137.0 eV

PbO & PbCO3 BE = 138.9 eV

PbxOy

BE = 138.1 eV

Page 520: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

LEAD - Naturally Formed Native Oxide (Freshly Made) native PbOxE

l e c t r o n C

o u n t s

Binding Energy (eV)

3500

542 522538 534 530 526

Baseline: 535.65 to 527.25 eV# 1: 529.81 eV 1.48 eV 13002.25 cts 16.57%# 2: 531.64 eV 1.28 eV 57157.51 cts 72.85%# 3: 532.67 eV 1.33 eV 8296.53 cts 10.57%3 iterations, chi square = 2.1298

O (1s)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 80:20

PbOBE = 529.8 eV

PbCO3

BE = 531.6 eV

Page 521: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

LEAD - Naturally Formed Native Oxide (Freshly Made) native PbOxE

l e c t r o n C

o u n t s

Binding Energy (eV)

700

297 277293 289 285 281

Baseline: 292.92 to 282.02 eV# 1: 285.60 eV 1.26 eV 10871.24 cts 64.56%# 2: 286.86 eV 1.08 eV 1406.17 cts 8.35%# 3: 289.62 eV 1.27 eV 4562.86 cts 27.09%3 iterations, chi square = 2.6942

C (1s)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 80:20

(0.60eV above 285.0 eV)

Differential charging mightbe present in carbon andoxide layers. Pure metalBEs should not be affected.

C-C,C-R

CO3

Lead oxides readilycollect CO2 gas toform a carbonate.

Page 522: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

PALLADIUM - Naturally Formed Native Oxide native PdOx

Detailed Surface Composition Table

Description: NATIVE PALLADIUM OXIDE / PALLADIUM (Pd) SHEET (90 DEG TOA, AS RECEIVED)

Date: Fri May 27 1988

Corrected Exper. Sens Norm Relative Signal BE BE Factor Area Area Atom % Pd3p1 560.5 560.5 3.83 29724 7761 * O+Pd 532.2 532.2 2.93 83401 28464 23.69 NaAuger 497.1 497.1 3.40 10562 3106 * N 1s 399.7 399.7 1.80 8768 4871 4.05 * Pd3d 334.8 334.8 16.04 147852 9218 7.67 C loss 306.3 306.3 0.00 9698 0 * C 1s 284.8 284.8 1.00 73450 73450 61.12 S 2s 226.8 226.8 1.43 3534 2472 * Cl2p 197.6 197.6 2.29 3446 1505 1.25 * S 2p 161.6 161.6 1.68 4456 2657 2.21 Pd4s 86.1 86.1 0.60 6228 10415 Pd4p 51.9 51.9 1.88 14847 7897 O 2s 25.4 25.4 0.14 5658 40417

Page 523: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

PALLADIUM - Naturally Formed Native Oxide native PdOxE

lect

ron

Cou

nts

Binding Energy (eV)

20000

1000 0800 600 400 200

Pd(

3p1)

O(1

s)

Na(

Aug

er)

N(1

s)

Pd(

3d)

C lo

ss

C

(1s)

S(2

s)

Cl(2

p)

S(2

p)

Pd(

4s)

Pd(

4p)

O(2

s)

Wide Scan Survey SpectrumCharge Neutralizer OFF

Chlorine (Cl) and sulfur (S) areattributed to air-borne gases. Thesodium (Na) and nitrogen (N) areprobably due to the productionprocess.

Page 524: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

PALLADIUM - Naturally Formed Native Oxide native PdOxE

l e c t r o n C

o u n t s

Binding Energy (eV)

10000

349 329345 341 337 333

Baseline: 339.20 to 332.45 eV# 1: 335.36 eV 1.06 eV 131046.30 cts 85.96%# 2: 336.26 eV 1.14 eV 14550.17 cts 9.54%# 3: 338.06 eV 1.43 eV 6856.73 cts 4.50%3 iterations, chi square = 3.3051

Pd (3d)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 80:20

Pd 0

BE = 335.3 eV

PdOBE = 338.0 eV

Page 525: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

PALLADIUM - Naturally Formed Native Oxide native PdOxE

l e c t r o n C

o u n t s

Binding Energy (eV)

7000

542 522538 534 530 526

Baseline: 539.80 to 527.10 eV# 1: 531.44 eV 1.69 eV 74105.16 cts 33.23%# 2: 532.39 eV 1.26 eV 71689.08 cts 32.14%# 3: 533.39 eV 1.25 eV 45176.52 cts 20.25%# 4: 534.46 eV 1.54 eV 21671.45 cts 9.72%# 5: 536.14 eV 1.50 eV 10397.52 cts 4.66%11 iterations, chi square = 2.6979

O (1s)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 80:20

Seems to be oxygenbonded to carbon only.

Page 526: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

PALLADIUM - Naturally Formed Native Oxide native PdOxE

l e c t r o n C

o u n t s

Binding Energy (eV)

7000

297 277293 289 285 281

Baseline: 291.43 to 281.71 eV# 1: 285.31 eV 1.43 eV 119452.37 cts 70.58%# 2: 286.30 eV 1.50 eV 30113.38 cts 17.79%# 3: 287.50 eV 1.50 eV 6485.87 cts 3.83%# 4: 288.89 eV 1.68 eV 13201.66 cts 7.80%3 iterations, chi square = 1.4546

C (1s)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 80:20

(0.31 eV above 285.0 eV)

C-C,C-R

COH,COR

COOH,COOR

K ?

Page 527: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

PLATINUM - Naturally Formed Native Oxide native PtOx

Detailed Surface Composition Table

Description: NATIVE PLATINUM OXIDE / PLATINUM (Pt) SHEET (90 DEG TOA, AS RECEIVED)

Date: Fri May 27 1988

Corrected Exper. Sens Norm Relative Signal BE BE Factor Area Area Atom % O Auger 976.8 976.8 0.00 16758 0 Cu2p1 952.0 952.0 8.66 2457 284 * Cu2p3 932.2 932.2 16.73 4639 277 0.30 FeAuger 835.7 835.7 0.00 1797 0 FeAuger 781.9 781.9 0.00 2497 0 Pt+Fe 724.6 724.6 1.90 10699 5631 * Fe2p3 710.7 710.7 10.82 10072 931 1.02 Pt4p1 607.7 607.7 2.14 7599 3551 O loss 550.2 550.2 0.00 15434 0 * O 1s 531.7 531.7 2.93 50021 17072 18.75 Pt4p3 519.1 519.1 5.74 19307 3364 * NaAuger 496.7 496.7 3.40 6123 1801 1.98 * N 1s 399.1 399.1 1.80 5437 3021 3.32 * Ca2p 347.4 347.4 5.07 7007 1382 1.52 Pt4d3 330.9 330.9 7.78 52613 6763 Pt4d5 313.8 313.8 11.32 71779 6341

Page 528: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

PLATINUM - Naturally Formed Native Oxide native PtOx

Detailed Surface Composition Table (continued)

Description: NATIVE PLATINUM OXIDE / PLATINUM (Pt) SHEET (90 DEG TOA, AS RECEIVED)

Date: Fri May 27 1988

Corrected Exper. Sens Norm Relative Signal BE BE Factor Area Area Atom % * C 1s 284.5 284.5 1.00 52427 52427 57.57 Cl2s 268.0 268.0 1.69 1597 945 * Cl2p 197.7 197.7 2.29 1361 594 0.65 * Si2s 153.1 153.1 0.95 1709 1799 1.98 Si+Pt 102.0 102.0 0.82 55006 67080 * Pt4f 73.3 73.3 15.46 181740 11755 12.91 Pt5p3 51.0 51.0 1.04 12593 12108 O 2s 24.7 24.7 0.14 6867 49048

Page 529: Vol 1 - XPS of Elements & Native Oxides - 1999

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PLATINUM - Naturally Formed Native Oxide native PtOxE

lect

ron

Cou

nts

Binding Energy (eV)

200000

1000 0800 600 400 200

O(A

uger

)

Cu(

2p1)

Cu(

2p3)

Fe(

Aug

er)

Fe(

Aug

er)

Pt+

Fe

Fe(

2p3)

Pt(

4p1)

O lo

ss

O

(1s)

Pt(

4p3)

Na(

Aug

er)

N(1

s)

Ca(

2p) Pt(

4d3)

Pt(

4d5)

C(1

s)C

l(2s)

Cl(2

p)

Si(2

s)

Si+

Pt

Pt(

4f)

Pt(

5p3)

O(2

s)

Wide Scan Survey SpectrumCharge Neutralizer OFF

The chlorine (Cl) contaminant is attributed toair-borne gases. The sodium (Na), nitrogen(N), calcium (Ca), iron (Fe), copper (Cu), andsilicon (Si) contaminants are attributed to theproduction process.

Page 530: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

PLATINUM - Naturally Formed Native Oxide native PtOxE

l e c t r o n C

o u n t s

Binding Energy (eV)

26000

84 6480 76 72 68

Baseline: 79.22 to 68.16 eV# 1: 71.07 eV 0.92 eV 291781.38 cts 40.94%# 2: 71.96 eV 0.93 eV 66514.60 cts 9.33%# 3: 73.07 eV 1.11 eV 32386.79 cts 4.54%# 4: 74.39 eV 0.91 eV 222628.38 cts 31.24%# 5: 75.19 eV 0.94 eV 62046.59 cts 8.71%# 6: 76.10 eV 0.98 eV 20844.81 cts 2.92%# 7: 77.22 eV 1.37 eV 16548.60 cts 2.32%5 iterations, chi square = 2.7154

Pt (4f)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 70:30

Pt 0

BE = 71.0 eV

PtOx

73.1 eV

Page 531: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

PLATINUM - Naturally Formed Native Oxide native PtOxE

l e c t r o n C

o u n t s

Binding Energy (eV)

20000

542 522538 534 530 526

Baseline: 538.16 to 527.73 eV# 1: 529.88 eV 1.57 eV 90806.32 cts 14.06%# 2: 531.56 eV 1.56 eV 247852.44 cts 38.37%# 3: 532.62 eV 1.55 eV 220639.02 cts 34.15%# 4: 533.73 eV 1.49 eV 63716.18 cts 9.86%# 5: 534.92 eV 1.75 eV 23017.21 cts 3.56%3 iterations, chi square = 2.7158

O (1s)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 80:20

PtOx

BE = 529.9 eV

Page 532: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

PLATINUM - Naturally Formed Native Oxide native PtOxE

l e c t r o n C

o u n t s

Binding Energy (eV)

10000

297 277293 289 285 281

Baseline: 292.14 to 281.47 eV# 1: 285.12 eV 1.36 eV 166268.03 cts 63.39%# 2: 286.12 eV 1.50 eV 55030.38 cts 20.98%# 3: 287.46 eV 1.50 eV 15161.20 cts 5.78%# 4: 288.88 eV 2.00 eV 25835.53 cts 9.85%3 iterations, chi square = 2.3497

C (1s)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 80:20

(0.12 eV above 285.0 eV)

C-C,C-R

COH,COR

COOH,COOR

C=O,O-C-O

Page 533: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

RHENIUM - Naturally Formed Native Oxide native ReOx

Detailed Surface Composition Table

Description: NATIVE RHENIUM OXIDE / RHENIUM (Re) RIBBON (35 DEG TOA, AS RECEIVED)Date: Mon Mar 15 1993

Corrected Exper. Sens Norm Relative Signal BE BE Factor Area Area Atom % * O 1s 532.0 532.0 2.22 25112 11300 25.23 NaAuger 496.6 496.6 2.69 4141 1537 Re4p3 446.9 446.9 4.45 4865 1092 * C 1s 284.9 284.9 1.00 32145 32154 71.79 Re4d3 275.1 275.1 7.02 2999 427 * Re4d5 261.2 261.2 10.30 13728 1333 2.98 Re4f 42.1 42.1 13.81 39446 2856 O 2s 23.3 23.3 0.18 1319 7439

Page 534: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

RHENIUM - Naturally Formed Native Oxide native ReOxE

lect

ron

Cou

nts

Binding Energy (eV)

8500

1000 0800 600 400 200

O(1

s)

Na(

Aug

er)

Re(

4p3)

C(1

s)R

e(4d

3)R

e(4d

5)

Re(

4f)

O(2

s)

Wide Scan Survey SpectrumCharge Neutralizer OFF

Page 535: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

RHENIUM - Naturally Formed Native Oxide native ReOxE

l e c t r o n C

o u n t s

Binding Energy (eV)

2000

56 3652 48 44 40

Baseline: 52.95 to 37.90 eV# 1: 40.32 eV 0.75 eV 27714.81 cts 22.44%# 2: 41.44 eV 1.06 eV 19499.94 cts 15.79%# 3: 42.72 eV 0.98 eV 29018.82 cts 23.49%# 4: 44.01 eV 1.11 eV 15478.29 cts 12.53%# 5: 45.38 eV 1.23 eV 7074.76 cts 5.73%# 6: 46.47 eV 1.06 eV 9680.46 cts 7.84%# 7: 47.53 eV 1.03 eV 3651.97 cts 2.96%# 8: 48.89 eV 1.53 eV 11394.13 cts 9.23%9 iterations, chi square = 2.0317

Re (4f)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 70:30

Re 0

BE = 40.3 eV

ReO3

BE = 46.5 eV

ReO2

BE = 45.4 eV

Re2O3

41.4 eV

Page 536: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

RHENIUM - Naturally Formed Native Oxide native ReOxE

l e c t r o n C

o u n t s

Binding Energy (eV)

1000

542 522538 534 530 526

Baseline: 536.50 to 527.30 eV# 1: 531.21 eV 1.63 eV 18995.63 cts 41.39%# 2: 532.38 eV 1.38 eV 18155.29 cts 39.56%# 3: 533.66 eV 1.51 eV 8741.14 cts 19.05%5 iterations, chi square = 2.2241

O (1s)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 80:20

Page 537: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

RHENIUM - Naturally Formed Native Oxide native ReOxE

l e c t r o n C

o u n t s

Binding Energy (eV)

2000

296 276292 288 284 280

Baseline: 290.75 to 282.05 eV# 1: 284.95 eV 1.23 eV 42237.51 cts 73.11%# 2: 286.09 eV 1.28 eV 10306.31 cts 17.84%# 3: 287.59 eV 1.30 eV 2908.69 cts 5.03%# 4: 288.96 eV 1.17 eV 2323.25 cts 4.02%3 iterations, chi square = 1.8865

C (1s)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 80:20

(0.11 eV above 285.0 eV)

C-C,C-R

COH,COR

COOH,COOR

C=O,O-C-O

Page 538: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

RHODIUM - Naturally Formed Native Oxide native RhOx

Detailed Surface Composition Table

Description: NATIVE RHODIUM OXIDE / RHODIUM (Rh) COATING (RHODIUM METAL PLATED ON ALUMINIUM, 90 DEG TOA, AS RECEIVED)Date: Tue May 24 1988

Corrected Exper. Sens Norm Relative Signal BE BE Factor Area Area Atom % O Auger 976.5 976.5 0.00 17058 0 Rh3s 629.4 629.4 2.70 17600 6519 * O 1s 531.5 531.5 2.93 49827 17006 15.95 Rh3p1 520.9 520.9 3.64 37688 10354 Rh3p3 496.2 496.2 7.21 113924 15801 * N 1s 397.7 397.7 1.80 12458 6921 6.49 Rh loss 336.7 336.7 0.00 32797 0 * Rh3d 306.5 306.5 14.19 357916 25223 23.66 * C 1s 284.0 284.0 1.00 55802 55802 52.34 Cl2s 267.7 267.7 1.69 2373 1404 * Cl2p 196.9 196.9 2.29 3782 1655 1.55 Rh4s 80.2 80.2 0.56 11265 20117 Rh4p 46.3 46.3 1.75 41564 23751

Page 539: Vol 1 - XPS of Elements & Native Oxides - 1999

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RHODIUM - Naturally Formed Native Oxide native RhOxE

lect

ron

Cou

nts

Binding Energy (eV)

40000

1000 0800 600 400 200

O(A

uger

)

Rh(

3s)

O(1

s)R

h(3p

1)

Rh(

3p3)

N(1

s)

Rh

loss

Rh(

3d)

C(1

s)C

l(2s)

Cl(2

p)

Rh(

4s)

Rh(

4p)

Wide Scan Survey SpectrumCharge Neutralizer OFF

Chlorine (Cl) is attributed to air-bornegases. The nitrogen is probably due to theproduction process.

Page 540: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

RHODIUM - Naturally Formed Native Oxide native RhOxE

l e c t r o n C

o u n t s

Binding Energy (eV)

14000

315 305313 311 309 307

Baseline: 310.14 to 305.08 eV# 1: 307.05 eV 0.78 eV 281333.09 cts 75.67%# 2: 307.79 eV 0.80 eV 66789.49 cts 17.96%# 3: 308.54 eV 0.79 eV 23686.47 cts 6.37%3 iterations, chi square = 2.5726

Rh (3d )

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 80:20

Rh 0

BE = 307.1 eV

Rh2O3

BE = 308.5 eV

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RHODIUM - Naturally Formed Native Oxide native RhOxE

l e c t r o n C

o u n t s

Binding Energy (eV)

5600

542 522538 534 530 526

Baseline: 536.35 to 527.02 eV# 1: 529.30 eV 1.02 eV 7184.10 cts 3.71%# 2: 530.83 eV 1.53 eV 61064.82 cts 31.51%# 3: 531.84 eV 1.40 eV 74045.21 cts 38.21%# 4: 532.91 eV 1.51 eV 51491.69 cts 26.57%14 iterations, chi square = 2.6174

O (1s)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 80:20

RhOx

BE = 529.3 eV

Page 542: Vol 1 - XPS of Elements & Native Oxides - 1999

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RHODIUM - Naturally Formed Native Oxide native RhOxE

l e c t r o n C

o u n t s

Binding Energy (eV)

5800

297 277293 289 285 281

Baseline: 291.27 to 281.39 eV# 1: 284.63 eV 1.16 eV 86375.68 cts 57.76%# 2: 285.63 eV 1.34 eV 29001.87 cts 19.39%# 3: 286.70 eV 1.25 eV 14669.40 cts 9.81%# 4: 288.24 eV 1.65 eV 19505.16 cts 13.04%4 iterations, chi square = 2.1146

C (1s)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 80:20

(0.37 eV below 285.0 eV)

C-C,C-R

COH,COR

COOH,COOR

C=O,O-C-O

Page 543: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

RUTHENIUM - Naturally Formed Native Oxide native RuOx

Detailed Surface Composition Table

Description: NATIVE RUTHENIUM OXIDE / RUTHENIUM (Ru) POWDER AS RECEIVED, PRESSED ONTO INDIUM (In) FOIL

Date: Thu June 2 1988

Corrected Exper. Sens Norm Relative Signal BE BE Factor Area Area Atom % O Auger 973.5 973.5 0.00 4166 0 Ru3s 586.8 586.8 2.57 3067 1193 * O 1s 529.8 529.8 2.93 9059 3092 30.57 Ru3p1 483.8 483.8 3.44 8125 2362 * Ru3p3 461.7 461.7 6.78 18151 2677 26.47 Ru loss 316.0 316.0 0.00 3375 0 * Ru3d 279.9 279.9 12.49 54252 4344 42.95 Ru4s 74.7 74.7 0.52 1779 3428 Ru4p 42.9 42.9 1.59 5449 3427 O 2s 20.4 20.4 0.14 335 2391

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RUTHENIUM - Naturally Formed Native Oxide native RuOxE

lect

ron

Cou

nts

Binding Energy (eV)

22000

1000 0800 600 400 200

O(A

uger

)

Ru(

3s)

O(1

s)

Ru(

3p1) R

u(3p

3)

Ru

loss

Ru(

3d)

Ru(

4s)

Ru(

4p)

O(2

s)

Wide Scan Survey SpectrumCharge Neutralizer OFF

Page 545: Vol 1 - XPS of Elements & Native Oxides - 1999

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RUTHENIUM - Naturally Formed Native Oxide native RuOxE

l e c t r o n C

o u n t s

Binding Energy (eV)

14000

294 274290 286 282 278

Baseline: 291.02 to 278.55 eV# 1: 280.12 eV 0.63 eV 99025.05 cts 25.76%# 2: 280.87 eV 0.95 eV 63129.07 cts 16.42%# 3: 281.90 eV 1.29 eV 35033.80 cts 9.11%# 4: 283.58 eV 1.68 eV 38867.14 cts 10.11%# 5: 284.35 eV 0.89 eV 65960.71 cts 17.16%# 6: 285.19 eV 1.07 eV 45424.46 cts 11.82%# 7: 286.19 eV 1.13 eV 17104.83 cts 4.45%# 8: 287.50 eV 2.04 eV 19870.70 cts 5.17%7 iterations, chi square = 2.4679

Ru (3d)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 80:20

Ru 0

BE =280.1 eV

RuO2

280.9 eVRuO4

283.6 eV RuO3

281.9 eVC-C, C-R285.2 eV

Page 546: Vol 1 - XPS of Elements & Native Oxides - 1999

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RUTHENIUM - Naturally Formed Native Oxide native RuOxE

l e c t r o n C

o u n t s

Binding Energy (eV)

3500

542 522538 534 530 526

Baseline: 537.76 to 527.18 eV# 1: 529.69 eV 1.37 eV 51418.11 cts 49.01%# 2: 530.93 eV 1.41 eV 34968.16 cts 33.33%# 3: 532.28 eV 1.49 eV 13607.00 cts 12.97%# 4: 533.66 eV 1.50 eV 4930.37 cts 4.70%3 iterations, chi square = 2.6689

RuO2

BE = 529.7 eV

O (1s)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 80:20

Page 547: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

ANTIMONY - Naturally Formed Native Oxide (Freshly Made) native SbOx

Detailed Surface Composition Table

Description: NATIVE ANTIMONY OXIDE / ANTIMONY (Sb) CHIP (90 DEG TOA, SCRAPED CLEAN, EXPOSED TO AIR FOR ABOUT 5 MINUTES)Date: Tue Jun 7 1988

Corrected Exper. Sens Norm Relative Signal BE BE Factor Area Area O Auger 975.4 975.4 0.00 12704 0 Sb3s 945.9 945.9 3.36 17516 5213 Sb loss 830.5 830.5 0.00 8131 0 Sb3p1 814.0 814.0 4.76 52611 11053 Sb loss 783.7 783.7 0.00 25344 0 Sb3p3 767.7 767.7 9.77 119471 12228 O loss 553.8 553.8 0.00 51221 0 Sb3d 528.4 528.4 27.74 679336 24489 C 1s 284.5 284.5 1.00 14471 14471 Sb loss 169.2 169.2 1.68 3942 2346 Sb4s 153.1 153.1 0.85 17462 20592 Sb4p 100.0 100.0 2.88 20126 6988 Sb4d 31.9 31.9 3.14 123432 39310

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ANTIMONY - Naturally Formed Native Oxide (Freshly Made) native SbOxE

lect

ron

Cou

nts

Binding Energy (eV)

110000

1000 0800 600 400 200

O(A

uger

)

Sb(

3s)

Sb

loss

S

b(3p

1)

Sb

loss

S

b(3p

3)

O lo

ss

Sb(

3d)

C(1

s)

Sb

loss

S

b(4s

)

Sb(

4p)

Sb

loss

S

b lo

ss

Sb(

4d)

Wide Scan Survey SpectrumCharge Neutralizer OFF

Page 549: Vol 1 - XPS of Elements & Native Oxides - 1999

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ANTIMONY - Naturally Formed Native Oxide (Freshly Made) native SbOxE

lect

ron

Cou

nts

Binding Energy (eV)

30000

545 525541 537 533 529

Baseline: 534.25 to 525.31 eV# 1: 528.23 eV 0.89 eV 365743.47 cts 53.16%# 2: 530.35 eV 1.43 eV 322308.97 cts 46.84%8 iterations, chi square = 3.5656

Sb (3d)overlaps O (1s)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 80:20

Sb 0

BE = 528.2 eV

SbxOy

BE = 530.3 eV

Page 550: Vol 1 - XPS of Elements & Native Oxides - 1999

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ANTIMONY - Naturally Formed Native Oxide (Freshly Made) native SbOxE

l e c t r o n C

o u n t s

Binding Energy (eV)

3500

297 277293 289 285 281

Baseline: 292.45 to 282.25 eV# 1: 285.10 eV 1.35 eV 60946.37 cts 82.27%# 2: 286.82 eV 1.44 eV 7002.31 cts 9.45%# 3: 288.38 eV 1.30 eV 2924.70 cts 3.95%# 4: 289.45 eV 1.49 eV 3204.59 cts 4.33%4 iterations, chi square = 2.2825

C (1s)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 80:20

(0.10 eV above 285.0 eV)

C-C,C-R

COH,COR

COOH,COOR

C=O,O-C-O

Page 551: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

SCANDIUM - Naturally Formed Native Oxide native ScOx

Detailed Surface Composition Table

Description: NATIVE SCANDIUM OXIDE / SCANDIUM (Sc) TURNING (90 DEG TOA, AS RECEIVED)

Date: Wed Jun 1 1988

Corrected Exper. Sens Norm Relative Signal BE BE Factor Area Area Atom % O Auger 977.0 977.0 0.00 33221 0 O loss 549.4 549.4 0.00 44771 0 * O 1s 531.8 531.8 2.93 101171 34529 39.32 Sc loss 513.4 513.4 0.00 6564 0 Sc2s 501.4 501.4 2.91 32621 11210 Sc loss 418.1 418.1 0.00 25914 0 * Sc2p 402.4 402.4 6.38 114985 18023 20.52 * C 1s 285.3 285.3 1.00 35273 35273 40.16 Sc3s 52.8 52.8 0.41 9483 23073 Sc3p 31.2 31.2 0.65 17211 26478 O 2s 22.6 22.6 0.14 1723 12311

Page 552: Vol 1 - XPS of Elements & Native Oxides - 1999

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SCANDIUM - Naturally Formed Native Oxide native ScOxE

lect

ron

Cou

nts

Binding Energy (eV)

100000

1000 0800 600 400 200

O(A

uger

)

O lo

ss

O

(1s)

Sc

loss

S

c(2s

)

Sc

loss

S

c(2p

)

C(1

s)

Sc(

3s)

Sc(

3p)

O(2

s)

Wide Scan Survey SpectrumCharge Neutralizer OFF

Page 553: Vol 1 - XPS of Elements & Native Oxides - 1999

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SCANDIUM - Naturally Formed Native Oxide native ScOxE

l e c t r o n C

o u n t s

Binding Energy (eV)

20000

414 394410 406 402 398

Baseline: 410.35 to 393.88 eV# 1: 398.50 eV 0.94 eV 47196.03 cts 5.27%# 2: 399.86 eV 1.30 eV 65372.91 cts 7.30%# 3: 400.95 eV 1.30 eV 101903.07 cts 11.37%# 4: 402.17 eV 1.30 eV 183479.61 cts 20.48%# 5: 403.03 eV 1.30 eV 171220.92 cts 19.11%# 6: 403.38 eV 0.94 eV 23598.02 cts 2.63%# 7: 403.93 eV 1.50 eV 85822.19 cts 9.58%# 8: 406.67 eV 1.50 eV 102363.34 cts 11.42%# 9: 407.79 eV 1.50 eV 84852.27 cts 9.47%#10: 405.41 eV 1.18 eV 30217.55 cts 3.37%3 iterations, chi square = 11.5483

Sc (2p)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 80:20

Sc2O3

BE = 403.0 eV

Sc 0

BE = 398.5 eV

(nitride)

ScO(OH) ?

Page 554: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

SCANDIUM - Naturally Formed Native Oxide native ScOxE

l e c t r o n C

o u n t s

Binding Energy (eV)

34000

542 522538 534 530 526

Baseline: 536.98 to 527.49 eV# 1: 530.53 eV 1.42 eV 378666.13 cts 28.10%# 2: 531.53 eV 1.30 eV 206412.89 cts 15.32%# 3: 532.48 eV 1.59 eV 600806.94 cts 44.59%# 4: 533.54 eV 1.64 eV 161617.17 cts 11.99%5 iterations, chi square = 2.7598

O (1s)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 80:20

Sc2O3

BE = 530.5 eV

Page 555: Vol 1 - XPS of Elements & Native Oxides - 1999

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SCANDIUM - Naturally Formed Native Oxide native ScOxE

l e c t r o n C

o u n t s

Binding Energy (eV)

8000

298 278294 290 286 282

Baseline: 294.63 to 281.29 eV# 1: 285.98 eV 1.40 eV 146653.73 cts 72.47%# 2: 287.20 eV 1.41 eV 19501.26 cts 9.64%# 3: 289.45 eV 1.71 eV 16484.02 cts 8.15%# 4: 290.67 eV 1.68 eV 19732.60 cts 9.75%4 iterations, chi square = 1.6808

C (1s)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 80:20

(0.98 eV above 285.0 eV)

Differential charging mightbe present in carbon andoxide layers. Pure metalBEs should not be affected.

C-C,C-R

COH,COR

CO3

COOH,COOR

Page 556: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

SELENIUM - Naturally Formed Native Oxide native SeOx

Detailed Surface Composition Table

Description: NATIVE SELENIUM OXIDE / SELENIUM (Se) NODULE 35 DEG TOA (AS RECEIVED)Date: Tue Mar 16 1993

Corrected Exper. Sens Norm Relative Signal BE BE Factor Area Area Atom % * O 1s 532.2 532.2 2.22 4718 2124 2.91 Se Auger 454.2 454.2 0.00 9687 0 Se Auger 399.6 399.6 0.00 11441 0 Se Auger 392.3 392.3 0.00 13985 0 Se Auger 359.1 359.1 0.00 19662 0 Se Auger 296.5 296.5 0.00 52270 0 * C 1s 284.4 284.4 1.00 51261 51252 70.33 Se Auger 255.1 255.1 0.00 31611 0 Se3s 229.8 229.8 1.51 25453 16872 Se Auger 220.4 220.4 0.00 6056 0 Se Auger 198.5 198.5 0.00 65584 0 Se Auger 178.8 178.8 0.00 230543 0 Se (3p) 160.9 160.9 3.35 75072 22414 Se Auger 139.0 139.0 0.00 99912 0 Se Auger 116.0 116.0 0.00 8610 0 Se loss 74.5 74.5 0.00 23733 0 * Se3d 54.8 54.8 2.83 55174 19496 26.75

Page 557: Vol 1 - XPS of Elements & Native Oxides - 1999

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SELENIUM - Naturally Formed Native Oxide native SeOxE

lect

ron

Cou

nts

Binding Energy (eV)

70000

1000 0800 600 400 200

O(1

s)

Se(

Aug

er)

Se(

Aug

er)

Se(

Aug

er)

Se(

Aug

er) Se(

Aug

er)

C(1

s)

Se(

Aug

er)

Se(

3s)

Se(

Aug

er)

Se(

Aug

er)

Se(

Aug

er)

Se

(3p)

Se

loss

S

e(3d

)

Se(

Aug

er)

Se(

Aug

er)

Wide Scan Survey SpectrumCharge Neutralizer OFF

Page 558: Vol 1 - XPS of Elements & Native Oxides - 1999

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SELENIUM - Naturally Formed Native Oxide native SeOxE

lect

ron

Cou

nts

Binding Energy (eV)

6000

65 4561 57 53 49

Baseline: 62.15 to 51.40 eV# 1: 54.61 eV 0.71 eV 81301.76 cts 50.56%# 2: 55.46 eV 0.85 eV 79506.05 cts 49.44%5 iterations, chi square = 1.9050

Se (3d)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 80:20

Se 0

BE = 54.6 eV

Native oxides areabsent. Its seemsthey were sublimedinto UHV.

Page 559: Vol 1 - XPS of Elements & Native Oxides - 1999

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SELENIUM - Naturally Formed Native Oxide native SeOxE

lect

ron

Cou

nts

Binding Energy (eV)

1000

542 522538 534 530 526

Baseline: 536.90 to 527.60 eV# 1: 531.97 eV 2.11 eV 8534.91 cts 100.00%7 iterations, chi square = 20.0064

O (1s)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 80:20

Page 560: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

SELENIUM - Naturally Formed Native Oxide native SeOxE

lect

ron

Cou

nts

Binding Energy (eV)

3600

296 276292 288 284 280

Baseline: 286.05 to 283.05 eV# 1: 284.48 eV 1.32 eV 59262.77 cts 100.00%10 iterations, chi square = 3.2310

C (1s)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 80:20

(0.52 eV below 285.0 eV)

C-C,C-R

Page 561: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

SILICON - Naturally Formed Native Oxide native SiOx

Detailed Surface Composition Table

Description: NATIVE SILICON OXIDE / SILICON (Si) WAFER (90 DEG TOA, AS RECEIVED POLISHED SURFACE, DOPING TYPE UNKNOWN)

Date: Thu Jun 2 1988

Corrected Exper. Sens Norm Relative Signal BE BE Factor Area Area Atom % O Auger 979.8 979.8 0.00 37804 0 * F 1s 687.1 687.1 4.43 1415 319 0.24 O loss 554.7 554.7 0.00 33377 0 * O 1s 532.8 532.8 2.93 98933 33766 24.89 * Sn3d 487.3 487.3 25.05 2590 103 0.08 * N 1s 401.8 401.8 1.80 3301 1834 1.35 * C 1s 285.1 285.1 1.00 33295 33295 24.54 Si loss 201.2 201.2 0.00 3379 0 Si loss 184.7 184.7 0.00 9790 0 Si loss 167.8 167.8 0.00 29064 0 * Si2s 150.3 150.3 0.95 63380 66366 48.91 Si loss 133.9 133.9 0.00 8042 0 Si loss 116.4 116.4 0.00 27095 0 Si2p 98.9 98.9 0.82 53084 64975 O 2s 24.8 24.8 0.14 5870 41932

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SILICON - Naturally Formed Native Oxide native SiOxE

lect

ron

Cou

nts

Binding Energy (eV)

90000

1000 0800 600 400 200

O(A

uger

)

F(1

s)

O lo

ss

O

(1s)

Sn(

3d)

N(1

s)

C(1

s)

Si l

oss

S

i los

s

Si l

oss

S

i(2s)

Si l

oss

S

i los

s

Si(2

p)

O(2

s)

Wide Scan Survey SpectrumCharge Neutralizer OFFFluorine (F) is due to the

cleaning process. Tin (Sn)and nitrogen (N) might bedue to polishing process, butit is doubtful.

Page 563: Vol 1 - XPS of Elements & Native Oxides - 1999

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SILICON - Naturally Formed Native Oxide native SiOxE

l e c t r o n C

o u n t s

Binding Energy (eV)

8000

107 97105 103 101 99

Baseline: 106.41 to 97.94 eV# 1: 99.70 eV 0.59 eV 111243.72 cts 50.99%# 2: 100.31 eV 0.58 eV 56007.68 cts 25.67%# 3: 100.82 eV 0.94 eV 3553.50 cts 1.63%# 4: 102.62 eV 1.17 eV 6036.75 cts 2.77%# 5: 103.68 eV 1.39 eV 41340.05 cts 18.95%3 iterations, chi square = 1.4950

Si (2p)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 80:20

Si 0

BE = 99.7 eV

SiO2

BE = 103.7 eV

Si2O3 ?BE = 102.6 eV

SiO ?101.5 eV

Si2O ?100.8 eV

Page 564: Vol 1 - XPS of Elements & Native Oxides - 1999

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SILICON - Naturally Formed Native Oxide native SiOxE

lect

ron

Cou

nts

Binding Energy (eV)

50000

542 522538 534 530 526

Baseline: 538.31 to 528.82 eV# 1: 533.04 eV 1.70 eV 1147712.25 cts 97.79%# 2: 534.72 eV 1.80 eV 25916.63 cts 2.21%3 iterations, chi square = 3.7667

O (1s)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 80:20

SiO2

BE = 533.0 eV

Page 565: Vol 1 - XPS of Elements & Native Oxides - 1999

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SILICON - Naturally Formed Native Oxide native SiOxE

l e c t r o n C

o u n t s

Binding Energy (eV)

7000

298 278294 290 286 282

Baseline: 293.61 to 281.76 eV# 1: 285.73 eV 1.24 eV 114551.07 cts 67.27%# 2: 286.98 eV 1.33 eV 35410.79 cts 20.79%# 3: 288.12 eV 1.22 eV 10351.73 cts 6.08%# 4: 289.78 eV 1.38 eV 9972.35 cts 5.86%3 iterations, chi square = 2.4563

C (1s)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 80:20

(0.73 eV above 285.0 eV)

Differential charging mightbe present in carbon andoxide layers. Pure metalBEs should not be affected.

C-C,C-R

COH,COR

COOH,COOR

C=O,O-C-O

Page 566: Vol 1 - XPS of Elements & Native Oxides - 1999

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TIN - Naturally Formed Native Oxide native SnOx

Detailed Surface Composition Table

Description: NATIVE TIN OXIDE / TIN (Sn) SHEET 90 DEG TOA (AS RECEIVED)Date: Sat Mar 13 1993

Corrected Exper. Sens Norm Relative Signal BE BE Factor Area Area Atom % O Auger 975.8 975.8 0.00 26192 0 Sn3s 887.2 887.2 1.41 19048 13466 Sn3p1 758.3 758.3 2.51 72346 28818 Sn3p3 716.3 716.3 5.48 169406 30902 * O 1s 530.9 530.9 2.23 91362 41057 33.11 Sn loss 508.4 508.4 0.00 90448 0 * Sn3d 486.4 486.4 20.09 939912 46782 37.72 * C 1s 285.2 285.2 1.00 36151 36173 29.17 Sn4s 138.2 138.2 0.91 25986 28511 Sn4p 90.0 90.0 3.20 36130 11302 Sn loss 52.7 52.7 0.00 7832 0 Sn loss 38.9 38.9 0.00 41533 0 Sn4d 25.0 25.0 3.41 183008 53603

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TIN - Naturally Formed Native Oxide native SnOxE

lect

ron

Cou

nts

Binding Energy (eV)

90000

1000 0800 600 400 200

O(A

uger

)

Sn(

3s)

Sn(

3p1) Sn(

3p3) O(1

s)

Sn

loss

S

n(3d

)

C(1

s)

Sn(

4s)

Sn(

4p)

Sn

loss

S

n lo

ss

Sn(

4d)

Wide Scan Survey SpectrumCharge Neutralizer OFF

Page 568: Vol 1 - XPS of Elements & Native Oxides - 1999

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TIN - Naturally Formed Native Oxide native SnOxE

l e c t r o n C

o u n t s

Binding Energy (eV)

38000

500 480496 492 488 484

Baseline: 490.55 to 481.85 eV# 1: 484.85 eV 0.79 eV 542812.19 cts 29.28%# 2: 486.11 eV 1.23 eV 628636.19 cts 33.91%# 3: 486.99 eV 1.27 eV 682134.13 cts 36.80%3 iterations, chi square = 3.4718

Sn (3d)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 80:20

Sn 0

BE = 484.8 eV

SnOBE = 486.1 eV

SnO2

BE = 487.0 eV

Page 569: Vol 1 - XPS of Elements & Native Oxides - 1999

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TIN - Naturally Formed Native Oxide native SnOxE

lect

ron

Cou

nts

Binding Energy (eV)

8000

542 522538 534 530 526

Baseline: 536.20 to 526.75 eV# 1: 530.43 eV 1.38 eV 206797.23 cts 67.08%# 2: 531.93 eV 1.65 eV 101475.39 cts 32.92%3 iterations, chi square = 4.1357

O (1s)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 80:20

SnOx

BE = 530.4 eV

Page 570: Vol 1 - XPS of Elements & Native Oxides - 1999

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TIN - Naturally Formed Native Oxide native SnOxE

l e c t r o n C

o u n t s

Binding Energy (eV)

2000

296 276292 288 284 280

Baseline: 291.65 to 282.00 eV# 1: 285.15 eV 1.15 eV 42086.53 cts 81.90%# 2: 286.12 eV 1.26 eV 6059.17 cts 11.79%# 3: 289.08 eV 1.30 eV 3241.86 cts 6.31%5 iterations, chi square = 2.2774

C (1s)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 80:20

(0.15 eV above 285.0 eV)

C-C,C-R

COH,CORCO3

Page 571: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

TANTALUM - Naturally Formed Native Oxide native TaOx

Detailed Surface Composition Table

Description: NATIVE TANTALUM OXIDE / TANTALUM (Ta) SHEET 35 DEG TOADate: Mon Mar 1 1993

Corrected Exper. Sens Norm Relative Signal BE BE Factor Area Area Atom % O Auger 977.0 977.0 0.00 6051 0 O loss 547.6 547.6 0.00 3796 0 * O 1s 531.6 531.6 2.22 33357 15004 42.21 Ta4p1 467.8 467.8 1.71 5171 3032 Ta4p3 405.7 405.7 4.42 22200 5023 * C 1s 285.7 285.7 1.00 16827 16845 47.39 Ta loss 258.6 258.6 0.00 4294 0 Ta4d3 242.5 242.5 6.67 26319 3946 * Ta4d5 231.1 231.1 9.74 35998 3698 10.40 Ta loss 45.4 45.4 0.00 6368 0 Ta4f 27.2 27.2 10.88 65296 6001

Page 572: Vol 1 - XPS of Elements & Native Oxides - 1999

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TANTALUM - Naturally Formed Native Oxide native TaOxE

lect

ron

Cou

nts

Binding Energy (eV)

9000

1000 0800 600 400 200

O(A

uger

)

O lo

ss

O

(1s)

Ta(

4p1) T

a(4p

3)

C(1

s)

Ta

loss

T

a(4d

3)T

a(4d

5)

Ta

loss

T

a(4f

)

Wide Scan Survey SpectrumCharge Neutralizer OFF

Page 573: Vol 1 - XPS of Elements & Native Oxides - 1999

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TANTALUM - Naturally Formed Native Oxide native TaOxE

l e c t r o n C

o u n t s

Binding Energy (eV)

7000

36 1632 28 24 20

Baseline: 31.60 to 20.00 eV# 1: 21.86 eV 0.80 eV 13793.36 cts 4.07%# 2: 22.67 eV 0.80 eV 8815.03 cts 2.60%# 3: 23.59 eV 0.80 eV 11690.55 cts 3.45%# 4: 24.19 eV 0.80 eV 9321.32 cts 2.75%# 5: 24.97 eV 0.80 eV 8020.69 cts 2.37%# 6: 25.85 eV 0.80 eV 8789.66 cts 2.60%# 7: 27.17 eV 1.14 eV 157048.23 cts 46.39%# 8: 29.04 eV 1.15 eV 121046.09 cts 35.76%3 iterations, chi square = 1.4429

Ta (4f)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 70:30

Ta 0

BE = 21.9 eV

Ta2O5

BE = 27.2 eV

TaO2

BE = 23.6 eV

TaOx

BE = 22.7 eV

Page 574: Vol 1 - XPS of Elements & Native Oxides - 1999

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TANTALUM - Naturally Formed Native Oxide native TaOxE

l e c t r o n C

o u n t s

Binding Energy (eV)

3500

542 522538 534 530 526

Baseline: 536.35 to 527.70 eV# 1: 531.34 eV 1.28 eV 81385.34 cts 65.88%# 2: 532.44 eV 1.29 eV 25521.93 cts 20.66%# 3: 533.58 eV 1.51 eV 16626.47 cts 13.46%24 iterations, chi square = 2.3042

O (1s)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 80:20

Ta2O5

BE = 531.3 eV

Page 575: Vol 1 - XPS of Elements & Native Oxides - 1999

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TANTALUM - Naturally Formed Native Oxide native TaOxE

l e c t r o n C

o u n t s

Binding Energy (eV)

1600

296 276292 288 284 280

Baseline: 292.40 to 282.15 eV# 1: 285.88 eV 1.30 eV 38187.66 cts 73.93%# 2: 287.04 eV 1.21 eV 6992.34 cts 13.54%# 3: 288.17 eV 1.12 eV 2885.77 cts 5.59%# 4: 289.71 eV 1.34 eV 3587.50 cts 6.95%4 iterations, chi square = 2.8005

C-C,C-R

COH,COR

COOH,COOR

C=O,O-C-O

C (1s)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 80:20

(0.88 eV above 285.0 eV)

Differential charging mightbe present in carbon andoxide layers. Pure metalBEs should not be affected.

Page 576: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

TELLURIUM - Naturally Formed Native Oxide native TeOx

Detailed Surface Composition Table

Description: NATIVE TELLURIUM OXIDE / TELLERIUM (Te) CHIP (90 DEG TOA, AS RECEIVED)Date: Mon May 30 1988

Corrected Exper. Sens Norm Relative Signal BE BE Factor Area Area Atom % O Auger 975.2 975.2 0.00 16973 0 Te3p1 874.5 874.5 4.92 28216 5735 Te3p3 823.1 823.1 10.21 56667 5550 Te loss 597.9 597.9 0.00 16242 0 Te3d3 586.6 586.6 12.52 149074 11907 * Te3d5 576.2 576.2 18.06 220830 12228 24.26 O loss 549.2 549.2 0.00 18338 0 * O 1s 530.4 530.4 2.93 61800 21092 41.85 * C 1s 284.1 284.1 1.00 17083 17083 33.89 Te4s 171.9 171.9 0.90 11488 12722 Te4p 111.7 111.7 3.11 19609 6305 Te loss 65.4 65.4 0.00 8639 0 Te4d 43.2 43.2 3.63 90099 24821 O 2s 22.1 22.1 0.14 2978 21269

Page 577: Vol 1 - XPS of Elements & Native Oxides - 1999

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TELLURIUM - Naturally Formed Native Oxide native TeOxE

lect

ron

Cou

nts

Binding Energy (eV)

50000

1000 0800 600 400 200

O(A

uger

)

Te(

3p1)

Te(

3p3)

Te

loss

T

e(3d

3)T

e(3d

5)

O lo

ss

O

(1s)

C(1

s)

Te(

4s)

Te(

4p)

Te

loss

Te(

4d)

O(2

s)

Wide Scan Survey SpectrumCharge Neutralizer OFF

Page 578: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

TELLURIUM - Naturally Formed Native Oxide native TeOxE

l e c t r o n C

o u n t s

Binding Energy (eV)

22000

580 570578 576 574 572

Baseline: 579.57 to 571.14 eV# 1: 573.16 eV 1.13 eV 49093.20 cts 6.41%# 2: 574.24 eV 1.20 eV 21463.78 cts 2.80%# 3: 576.32 eV 1.29 eV 695029.38 cts 90.78%4 iterations, chi square = 2.1349

Te (3d 5/2)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 80:20

TeO2

BE = 576.3 eV

Te 0

BE = 573.2 eV

TeOx

BE = 574.2 eV

Page 579: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

TELLURIUM - Naturally Formed Native Oxide native TeOxE

lect

ron

Cou

nts

Binding Energy (eV)

9000

542 522538 534 530 526

Baseline: 535.49 to 526.71 eV# 1: 530.54 eV 1.29 eV 149332.02 cts 84.47%# 2: 531.54 eV 1.34 eV 27454.11 cts 15.53%16 iterations, chi square = 1.7140

O (1s)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 80:20

TeO2

BE = 530.5 eV

Page 580: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

TELLURIUM - Naturally Formed Native Oxide native TeOxE

lect

ron

Cou

nts

Binding Energy (eV)

1200

297 277293 289 285 281

Baseline: 289.63 to 281.78 eV# 1: 284.89 eV 1.32 eV 19014.84 cts 90.77%# 2: 286.63 eV 1.71 eV 1933.03 cts 9.23%3 iterations, chi square = 2.0129

C (1s)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 80:20

(0.11 eV below 285.0 eV)

C-C,C-R

COH,COR

Page 581: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

TITANIUM - Naturally Formed Native Oxide on Ion Etched Surface native TiOx

Detailed Surface Composition Table

Description: NATIVE TITANIUM OXIDE / TITANIUM (Ti) SHEET 90 DEG TOA, (PREVIOUSLY ION ETCHED)Date: Fri May 27 1988

Corrected Exper. Sens Norm Relative Signal BE BE Factor Area Area Atom % O Auger 975.0 975.0 0.00 36390 0 Ti loss 576.6 576.6 0.00 5747 0 Ti2s 564.8 564.8 3.24 24731 7633 O loss 547.0 547.0 0.00 7638 0 * O 1s 530.3 530.3 2.93 102283 34909 35.57 Ti loss 472.0 472.0 0.00 22951 0 * Ti2p 458.6 458.6 7.91 127625 16135 16.44 * N 1s 396.3 396.3 1.80 4641 2578 2.63 Ar2s 319.2 319.2 1.97 3176 1612 * C 1s 284.7 284.7 1.00 42999 42999 43.81 * Ar2p 241.9 241.9 3.04 4653 1531 1.56 Ti3s 60.9 60.9 0.47 12139 25663 Ti3p 36.2 36.2 0.81 24673 30348 O 2s 21.6 21.6 0.14 6117 43690

Page 582: Vol 1 - XPS of Elements & Native Oxides - 1999

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TITANIUM - Naturally Formed Native Oxide on Ion Etched Surface native TiOxE

lect

ron

Cou

nts

Binding Energy (eV)

25000

1000 0800 600 400 200

O(A

uger

)

Ti l

oss

T

i(2s)

O lo

ss

O

(1s)

Ti l

oss

T

i(2p)

N(1

s)

Ar(

2s)

C(1

s)

Ar(

2p)

Ti(3

s)

Ti(3

p)O

(2s)

Wide Scan Survey SpectrumCharge Neutralizer OFF

Page 583: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

TITANIUM - Naturally Formed Native Oxide on Ion Etched Surface native TiOxE

l e c t r o n C

o u n t s

Binding Energy (eV)

12000

470 450466 462 458 454

Baseline: 468.75 to 451.65 eV# 1: 453.89 eV 0.95 eV 35865.48 cts 9.57%# 2: 454.88 eV 1.37 eV 28224.16 cts 7.53%# 3: 457.08 eV 1.40 eV 19013.91 cts 5.07%# 4: 458.65 eV 1.37 eV 23934.07 cts 6.38%# 5: 458.75 eV 1.30 eV 144074.16 cts 38.43%# 6: 460.12 eV 1.30 eV 15510.30 cts 4.14%# 7: 461.77 eV 1.40 eV 5958.56 cts 1.59%# 8: 462.77 eV 1.30 eV 6629.92 cts 1.77%# 9: 463.74 eV 1.40 eV 19049.38 cts 5.08%#10: 464.74 eV 1.57 eV 47742.66 cts 12.73%#11: 456.04 eV 1.40 eV 16678.01 cts 4.45%#12: 460.76 eV 1.40 eV 12266.57 cts 3.27%3 iterations, chi square = 2.0345

Ti (2p)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 80:20

Ti0

BE = 453.9 eV

TiO2

BE = 458.8 eV

TiOTi2O3 ?

Page 584: Vol 1 - XPS of Elements & Native Oxides - 1999

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TITANIUM - Naturally Formed Native Oxide on Ion Etched Surface native TiOxE

l e c t r o n C

o u n t s

Binding Energy (eV)

14000

542 522538 534 530 526

Baseline: 537.14 to 526.47 eV# 1: 530.30 eV 1.24 eV 222365.53 cts 67.82%# 2: 531.60 eV 1.34 eV 70628.42 cts 21.54%# 3: 532.84 eV 1.56 eV 34878.75 cts 10.64%3 iterations, chi square = 2.7565

O (1s)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 80:20

TiO2

BE = 530.3 eV

Page 585: Vol 1 - XPS of Elements & Native Oxides - 1999

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TITANIUM - Naturally Formed Native Oxide on Ion Etched Surface native TiOxE

l e c t r o n C

o u n t s

Binding Energy (eV)

5000

297 277293 289 285 281

Baseline: 291.98 to 280.45 eV# 1: 285.19 eV 1.20 eV 70896.43 cts 68.52%# 2: 286.22 eV 1.25 eV 16714.36 cts 16.15%# 3: 287.38 eV 1.25 eV 6044.20 cts 5.84%# 4: 288.93 eV 1.45 eV 7380.51 cts 7.13%# 5: 281.84 eV 1.05 eV 2436.16 cts 2.35%5 iterations, chi square = 1.7948

C (1s)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 80:20

(0.19 eV above 285.0 eV)

C-C,C-R

COH,COR

carbideCOOH,COOR

C=O,O-C-O

Page 586: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

THALLIUM - Naturally Formed Native Oxide (Freshly Made) native TlOx

Detailed Surface Composition Table

Description: NATIVE THALLIUM OXIDE / THALLIUM (Tl) LUMP FRESHLY MADE NATIVE OXIDE, EXPOSED TO AIR 15 MINUTES, 90 DEG TOADate: Fri Jun 17 1988

Corrected Exper. Sens Norm Relative Signal BE BE Factor Area Area Atom % O Auger 976.7 976.7 0.00 19045 0 Tl4s 848.8 848.8 1.95 9656 4952 Tl4p1 722.6 722.6 2.13 21096 9904 Tl4p3 611.0 611.0 6.19 83988 13568 O loss 547.9 547.9 0.00 14126 0 * O 1s 531.1 531.1 2.93 65969 22515 32.37 Tl4d3 406.7 406.7 8.60 151771 17648 Tl4d5 385.9 385.9 12.60 217083 17229 * C 1s 284.9 284.9 1.00 22776 22776 32.74 Tl loss 139.6 139.6 0.00 35462 0 * Tl4f 118.3 118.3 20.76 503807 24268 34.89 Ti (5s) 95.0 95.0 0.47 13511 28747 Tl5p3 74.3 74.3 1.25 28887 23109 Tl loss 23.4 23.4 0.00 9762 0 Tl5d 12.9 12.9 2.38 82110 34486

Page 587: Vol 1 - XPS of Elements & Native Oxides - 1999

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THALLIUM - Naturally Formed Native Oxide (Freshly Made) native TlOxE

lect

ron

Cou

nts

Binding Energy (eV)

70000

1000 0800 600 400 200

O(A

uger

)

Tl(4

s)

Tl(4

p1) Tl(4

p3)

O lo

ss

O

(1s)

Tl(4

d3)

Tl(4

d5)

C(1

s)

Tl l

oss

T

l(4f)

Ti (

5s)

T

l(5p3

)

Tl l

oss

T

l(5d)

Wide Scan Survey SpectrumCharge Neutralizer OFF

Thallium (Tl) oxide readycollects CO2 from the air toform a carbonate species.

Page 588: Vol 1 - XPS of Elements & Native Oxides - 1999

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THALLIUM - Naturally Formed Native Oxide (Freshly Made) native TlOxE

l e c t r o n C

o u n t s

Binding Energy (eV)

50000

132 112128 124 120 116

Baseline: 127.76 to 115.84 eV# 1: 117.80 eV 0.94 eV 17574.09 cts 1.32%# 2: 119.35 eV 1.11 eV 659356.75 cts 49.66%# 3: 120.33 eV 1.70 eV 73257.69 cts 5.52%# 4: 122.20 eV 0.95 eV 10423.83 cts 0.79%# 5: 123.82 eV 1.12 eV 514946.13 cts 38.78%# 6: 124.93 eV 1.72 eV 52220.63 cts 3.93%3 iterations, chi square = 2.1585

Tl (4f)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 80:20

Tl 2OBE = 119.4 eV

Tl2(CO3)3

BE =120.3 eV

Tl 0

BE = 117.8 eV

Page 589: Vol 1 - XPS of Elements & Native Oxides - 1999

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THALLIUM - Naturally Formed Native Oxide (Freshly Made) native TlOxE

lect

ron

Cou

nts

Binding Energy (eV)

2000

541 521537 533 529 525

Baseline: 536.29 to 526.80 eV# 1: 531.21 eV 1.07 eV 26010.87 cts 87.69%# 2: 531.93 eV 1.00 eV 3652.32 cts 12.31%3 iterations, chi square = 2.1256

O (1s)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 80:20

Tl 2OBE =531.2 eV

Tl2(CO3)3

BE =531.2 eV

Page 590: Vol 1 - XPS of Elements & Native Oxides - 1999

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THALLIUM - Naturally Formed Native Oxide (Freshly Made) native TlOxE

lect

ron

Cou

nts

Binding Energy (eV)

2400

297 277293 289 285 281

Baseline: 293.55 to 282.65 eV# 1: 285.73 eV 1.17 eV 34511.65 cts 55.56%# 2: 289.32 eV 0.99 eV 27609.63 cts 44.44%13 iterations, chi square = 3.3336

C (1s)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 80:20

(0.73 eV above 285.0 eV)

Differential charging mightbe present in carbon andoxide layers. Pure metalBEs should not be affected.

C-C,C-R

CO3

Page 591: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

VANADIUM - Naturally Formed Native Oxide (Freshly Made) native VOx

Detailed Surface Composition Table

Description: NATIVE VANADIUM OXIDE / VANADIUM (V) TURNING (90 TOA, FRESHLY MADE, SCRAPED CLEAN, EXPOSED TO AIR 5 MINUTES)Date: Fri June 3 1988

Corrected Exper. Sens Norm Relative Signal BE BE Factor Area Area Atom % O Auger 975.4 975.4 0.00 51816 0 V 2s 629.8 629.8 3.57 40706 11402 * O 1s 530.5 530.5 2.93 93524 31920 42.90 * V 2p 516.5 516.5 9.66 164980 17079 22.95 * N 1s 396.6 396.6 1.80 2003 1113 1.50 * C 1s 284.8 284.8 1.00 24294 24294 32.65 V 3s 66.0 66.0 0.54 13011 24184 V 3p 36.4 36.4 1.00 31307 31433 O 2s 21.0 21.0 0.14 6118 43701

Page 592: Vol 1 - XPS of Elements & Native Oxides - 1999

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VANADIUM - Naturally Formed Native Oxide (Freshly Made) native VOxE

lect

ron

Cou

nts

Binding Energy (eV)

22000

1000 0800 600 400 200

O(A

uger

) V(2

s)

O(1

s)V

(2p)

N(1

s)

C(1

s)

V(3

s)

V(3

p)O

(2s)

O(2

p)

Wide Scan Survey SpectrumCharge Neutralizer OFF

Page 593: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

VANADIUM - Naturally Formed Native Oxide (Freshly Made) native VOxE

l e c t r o n C

o u n t s

Binding Energy (eV)

12000

528 508524 520 516 512

Baseline: 527.29 to 509.65 eV# 1: 512.11 eV 0.80 eV 95438.67 cts 18.77%# 2: 512.84 eV 1.30 eV 62771.76 cts 12.34%# 3: 515.08 eV 1.30 eV 49894.98 cts 9.81%# 4: 516.13 eV 1.30 eV 68542.56 cts 13.48%# 5: 517.19 eV 1.30 eV 59364.83 cts 11.67%# 6: 519.77 eV 1.30 eV 54360.90 cts 10.69%# 7: 520.88 eV 1.30 eV 17483.05 cts 3.44%# 8: 522.12 eV 1.30 eV 14130.76 cts 2.78%# 9: 523.15 eV 1.30 eV 18454.27 cts 3.63%#10: 524.08 eV 1.30 eV 18500.87 cts 3.64%#11: 513.93 eV 1.30 eV 37471.06 cts 7.37%#12: 525.02 eV 1.30 eV 12119.46 cts 2.38%5 iterations, chi square = 2.6340

V (2p)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 80:20

V0

BE = 512.1 eV

V2O5

BE = 517.2 eVVO2

BE = 516.1 eV

V2O3

515.1 eVVO ?

513.9 eV

Page 594: Vol 1 - XPS of Elements & Native Oxides - 1999

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VANADIUM - Naturally Formed Native Oxide (Freshly Made) native VOxE

l e c t r o n C

o u n t s

Binding Energy (eV)

12000

542 522538 534 530 526

Baseline: 537.06 to 527.25 eV# 1: 530.40 eV 1.33 eV 182887.84 cts 59.30%# 2: 531.70 eV 1.39 eV 74550.77 cts 24.17%# 3: 533.32 eV 1.78 eV 50954.47 cts 16.52%3 iterations, chi square = 2.8388

O (1s)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 80:20

V2O5

BE = 530.4 eV

Page 595: Vol 1 - XPS of Elements & Native Oxides - 1999

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VANADIUM - Naturally Formed Native Oxide (Freshly Made) native VOxE

l e c t r o n C

o u n t s

Binding Energy (eV)

2000

297 277293 289 285 281

Baseline: 294.49 to 281.55 eV# 1: 285.15 eV 1.63 eV 42738.63 cts 62.98%# 2: 286.90 eV 1.65 eV 16967.08 cts 25.00%# 3: 288.69 eV 1.58 eV 5757.37 cts 8.48%# 4: 290.15 eV 1.60 eV 2393.46 cts 3.53%4 iterations, chi square = 1.4829

C (1s)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 80:20

(0.15 eV above 285.0 eV)

C-C,C-R

COH,COR

COOH,COOR

C=O,O-C-O

Page 596: Vol 1 - XPS of Elements & Native Oxides - 1999

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TUNGSTEN - Naturally Formed Native Oxide native WOx

Detailed Surface Composition Table

Description: NATIVE TUNGSTEN OXIDE / TUNGSTEN (W) WIRE 35 DEG TOADate: Thu Mar 18 1993

Corrected Exper. Sens Norm Relative Signal BE BE Factor Area Area Atom % O Auger 975.5 975.5 0.00 25425 0 Fe2p3 711.5 711.5 6.39 6154 963 W 4s 597.0 597.0 1.26 8102 6423 O loss 550.7 550.7 0.00 22100 0 * O 1s 530.9 530.9 2.23 104378 46909 47.00 W 4p1 495.8 495.8 1.67 20385 12241 W 4p3 427.5 427.5 4.43 57532 12979 * N 1s 401.4 401.4 1.59 10397 6530 6.54 * C 1s 284.8 284.8 1.00 37090 37099 37.17 W 4d3 260.0 260.0 6.84 67035 9795 * W 4d5 247.4 247.4 10.01 92841 9276 9.29 W 5s 79.3 79.3 0.46 7109 15360 W loss 57.9 57.9 0.07 54222 773119 W 4f 35.3 35.3 12.29 180107 14655 O 2s 22.4 22.4 0.18 5987 33745 W 5d 6.7 6.7 0.56 11401 20468

Page 597: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

TUNGSTEN - Naturally Formed Native Oxide native WOxE

lect

ron

Cou

nts

Binding Energy (eV)

26000

1000 0800 600 400 200

O(A

uger

)

Fe(

2p3)

O lo

ss

O

(1s)

W(4

p1)

W(4

p3)

N(1

s)

C(1

s)

W(4

d3)

W(4

d5)

W(5

s)W

loss

W(4

f)O

(2s)

W(5

d)

W(4

s)

Wide Scan Survey SpectrumCharge Neutralizer OFF

Page 598: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

TUNGSTEN - Naturally Formed Native Oxide native WOxE

l e c t r o n C

o u n t s

Binding Energy (eV)

12000

46 2642 38 34 30

Baseline: 39.90 to 29.85 eV# 1: 31.38 eV 0.59 eV 60936.55 cts 10.33%# 2: 32.02 eV 0.62 eV 12108.04 cts 2.05%# 3: 32.67 eV 0.84 eV 7253.07 cts 1.23%# 4: 33.55 eV 0.62 eV 50984.72 cts 8.64%# 5: 34.26 eV 0.80 eV 14131.20 cts 2.39%# 6: 35.24 eV 0.67 eV 4438.08 cts 0.75%# 7: 35.79 eV 1.16 eV 250581.53 cts 42.47%# 8: 37.92 eV 1.18 eV 189606.45 cts 32.13%3 iterations, chi square = 1.4920

W (4f)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 70:30

W 0

BE = 31.4 eV

WO3

BE = 35.8 eV

WO2

BE = 32.7 eV

WOx

BE = 32.0 eV

Page 599: Vol 1 - XPS of Elements & Native Oxides - 1999

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TUNGSTEN - Naturally Formed Native Oxide native WOxE

lect

ron

Cou

nts

Binding Energy (eV)

6000

542 522538 534 530 526

Baseline: 535.85 to 527.50 eV# 1: 530.82 eV 1.37 eV 157689.11 cts 79.16%# 2: 532.05 eV 1.82 eV 41518.88 cts 20.84%3 iterations, chi square = 2.0867

O (1s)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 80:20

WO3

BE = 530.8 eV

Page 600: Vol 1 - XPS of Elements & Native Oxides - 1999

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TUNGSTEN - Naturally Formed Native Oxide native WOxE

l e c t r o n C

o u n t s

Binding Energy (eV)

1800

296 276292 288 284 280

Baseline: 291.35 to 281.70 eV# 1: 284.92 eV 1.37 eV 43560.63 cts 73.61%# 2: 286.41 eV 1.45 eV 10969.00 cts 18.54%# 3: 288.49 eV 1.64 eV 4648.07 cts 7.85%11 iterations, chi square = 2.8160

C-C,C-R

COH,COR

COOH,COOR

C (1s)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 80:20

(0.08 below 285.0 eV)

Page 601: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

YTTRIUM - Naturally Formed Native Oxide (Freshly Made) native YOx

Detailed Surface Composition Table

Description: NATIVE YTTRIUM OXIDE / YTTRIUM (Y) BLOCK (90 TOA, FRESHLY MADE, SCRAPED CLEAN, EXPOSED TO AIR 5 MINUTES)Date: Mon Jun 6 1988

Corrected Exper. Sens Norm Relative Signal BE BE Factor Area Area Atom % O Auger 978.3 978.3 0.00 52766 0 O loss 551.1 551.1 0.00 38300 0 * O 1s 532.9 532.9 2.93 137271 46850 43.39 Y 3s 395.9 395.9 1.98 37626 19003 Y loss 325.8 325.8 0.00 6440 0 Y 3p1 313.3 313.3 2.44 69279 28393 Y 3p3 301.5 301.5 4.75 113215 23835 * C 1s 286.0 286.0 1.00 29159 29159 27.01 Y loss 170.9 170.9 0.00 32710 0 * Y 3d 158.4 158.4 5.98 191097 31956 29.60 Y 4s 46.0 46.0 0.33 14411 43802 Y 4p 25.7 25.7 0.09 40059 440209

Page 602: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

YTTRIUM - Naturally Formed Native Oxide (Freshly Made) native YOxE

lect

ron

Cou

nts

Binding Energy (eV)

26000

1000 0800 600 400 200

O(A

uger

) O lo

ss

O

(1s)

Y(3

s)

Y lo

ss

Y

(3p1

)Y

(3p3

)C

(1s)

Y lo

ss

Y

(3d)

Y(4

s)Y

(4p)

Wide Scan Survey SpectrumCharge Neutralizer OFF

Page 603: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

YTTRIUM - Naturally Formed Native Oxide (Freshly Made) native YOxE

l e c t r o n C

o u n t s

Binding Energy (eV)

10000

170 150166 162 158 154

Baseline: 165.14 to 154.71 eV# 1: 155.91 eV 0.62 eV 28317.42 cts 6.35%# 2: 156.79 eV 1.20 eV 17881.99 cts 4.01%# 3: 158.01 eV 0.61 eV 18625.04 cts 4.18%# 4: 158.89 eV 0.90 eV 11812.03 cts 2.65%# 5: 158.62 eV 1.37 eV 132197.86 cts 29.66%# 6: 159.74 eV 1.18 eV 89717.05 cts 20.13%# 7: 160.75 eV 1.23 eV 88010.95 cts 19.74%# 8: 161.79 eV 1.25 eV 59213.44 cts 13.28%5 iterations, chi square = 2.4057

Y (3d)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 80:20

Y 0

BE = 155.9 eV

Y2O3

BE = 158.6 eV

Y(OH)3 or Y2(CO3)3

BE = 159.7 eV

YOx

BE = 156.8 eV

Page 604: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

YTTRIUM - Naturally Formed Native Oxide (Freshly Made) native YOxE

l e c t r o n C

o u n t s

Binding Energy (eV)

14000

542 522538 534 530 526

Baseline: 538.71 to 528.04 eV# 1: 531.04 eV 1.25 eV 134946.73 cts 29.39%# 2: 533.20 eV 1.70 eV 283384.47 cts 61.71%# 3: 534.37 eV 1.70 eV 40864.69 cts 8.90%6 iterations, chi square = 2.0979

O (1s)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 80:20

YOx

BE = 531.0 eV

Page 605: Vol 1 - XPS of Elements & Native Oxides - 1999

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YTTRIUM - Naturally Formed Native Oxide (Freshly Made) native YOxE

l e c t r o n C

o u n t s

Binding Energy (eV)

3800

297 277293 289 285 281

Baseline: 294.02 to 283.90 eV# 1: 286.76 eV 1.36 eV 65488.62 cts 79.19%# 2: 287.87 eV 1.31 eV 8170.07 cts 9.88%# 3: 291.00 eV 1.20 eV 3740.46 cts 4.52%# 4: 291.89 eV 1.18 eV 5295.18 cts 6.40%3 iterations, chi square = 2.2500

C-C,C-R

COH,COR

COOH,COOR

C (1s)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 80:20

(1.76 eV above 285.0 eV)

Differential charging mightbe present in carbon andoxide layers. Pure metalBEs should not be affected.

CO3

Page 606: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

ZINC - Naturally Formed Native Oxide native ZnOx

Detailed Surface Composition Table

Description: NATIVE ZINC OXIDE / ZINC (Zn) NODULE (60 DEG TOA, AS RECEIVED)Date: Fri June 3 1988

Corrected Exper. Sens Norm Relative Signal BE BE Factor Area Area Atom % O Auger 978.7 978.7 0.00 16454 0 Zn Auger 657.4 657.4 0.00 29469 0 Zn Auger 586.8 586.8 0.00 19070 0 Zn Auger 577.6 577.6 0.00 12871 0 Zn Auger 563.6 563.6 0.00 8716 0 * O 1s 532.1 532.1 2.93 80795 27575 29.21 Zn Auger 517.9 517.9 1.04 6248 6008 Zn Auger 499.0 499.0 0.00 120645 0 Zn Auger 475.8 475.8 0.00 44997 0 * C 1s 285.3 285.3 1.00 35071 35071 37.16 S 2s 233.3 233.3 1.43 3540 2476 * S 2p 169.5 169.5 1.68 3542 2112 2.24 Zn3s 139.5 139.5 1.04 29012 27896 Zn loss 110.1 110.1 0.00 10002 0 * Zn3p 88.6 88.6 2.83 83796 29631 31.39 Zn loss 23.9 23.9 0.00 13092 0 Zn3d 9.9 9.9 0.81 36074 44536

Page 607: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

ZINC - Naturally Formed Native Oxide native ZnOxE

lect

ron

Cou

nts

Binding Energy (eV)

18000

1000 0800 600 400 200

O(A

uger

)

Zn(

Aug

er)

Zn(

Aug

er)

Zn(

Aug

er)

Zn(

Aug

er)

O(1

s)Z

n(A

uger

)Z

n(A

uger

)

Zn(

Aug

er)

C(1

s)

S(2

s) S(2

p)

Zn(

3s)

Zn

loss

Z

n(3p

)

Zn

loss

Z

n(3d

)

Wide Scan Survey SpectrumCharge Neutralizer OFF

Sulfur (S) is attributed tocontamination by air-bornegases (e.g. H2S).

Page 608: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

ZINC - Naturally Formed Native Oxide native ZnOxE

l e c t r o n C

o u n t s

Binding Energy (eV)

8000

1028 10181026 1024 1022 1020

Baseline: 1027.80 to 1018.39 eV# 1: 1021.50 eV 1.00 eV 30167.12 cts 8.00%# 2: 1022.38 eV 1.38 eV 275154.44 cts 72.95%# 3: 1023.42 eV 1.46 eV 71869.82 cts 19.05%5 iterations, chi square = 2.6014

Zn (2p 3/2)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 70:30

Zn 0

BE = 1021.5 eV

ZnOBE = 1022.4 eV

Zn(OH)2 or ZnCO3

BE = 1023.4 eV

Page 609: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

ZINC - Naturally Formed Native Oxide native ZnOxE

l e c t r o n C

o u n t s

Binding Energy (eV)

7500

542 522538 534 530 526

Baseline: 537.76 to 527.49 eV# 1: 531.08 eV 1.12 eV 87251.88 cts 33.67%# 2: 532.27 eV 1.26 eV 43503.99 cts 16.79%# 3: 532.98 eV 1.83 eV 128416.08 cts 49.55%3 iterations, chi square = 2.4666

O (1s)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 80:20

ZnOBE = 531.0 eV

Page 610: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

ZINC - Naturally Formed Native Oxide native ZnOxE

l e c t r o n C

o u n t s

Binding Energy (eV)

3600

297 277293 289 285 281

Baseline: 293.94 to 282.57 eV# 1: 285.85 eV 1.26 eV 57811.37 cts 69.17%# 2: 286.86 eV 1.18 eV 11594.73 cts 13.87%# 3: 287.98 eV 1.45 eV 4687.33 cts 5.61%# 4: 289.66 eV 1.34 eV 5877.57 cts 7.03%# 5: 290.66 eV 1.73 eV 3606.71 cts 4.32%7 iterations, chi square = 1.6954

C-C,C-R

COH,COR

COOH,COOR

C=O,O-C-O

C (1s)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 80:20

(0.85 eV above 285.0 eV)

Differential charging mightbe present in carbon andoxide layers. Pure metalBEs should not be affected.

CO3

Page 611: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

ZIRCONIUM - Naturally Formed Native Oxide native ZrOx

Detailed Surface Composition Table

Description: NATIVE ZIRCONIUM OXIDE / ZIRCONIUM (Zr) BLOCK (90 DEG TOA, PREVIOUSLY ION ETCHED)

Date: Mon May 30 1988

Corrected Exper. Sens Norm Relative Signal BE BE Factor Area Area Atom % O Auger 976.9 976.9 0.00 43132 0 O loss 549.4 549.4 0.00 22251 0 * O 1s 531.3 531.3 2.93 137356 46879 41.57 Zr3s 433.5 433.5 2.10 25033 11920 Zr loss 360.9 360.9 12.17 11071 910 Zr3p1 347.0 347.0 2.64 68796 26059 Zr3p3 333.5 333.5 5.14 106721 20763 * C 1s 285.4 285.4 1.00 37305 37305 33.08 Ar2p 242.5 242.5 3.04 5881 1935 Zr loss 197.4 197.4 0.00 27490 0 * Zr3d 182.4 182.4 7.04 201292 28593 25.35 Zr (4s) 53.1 53.1 1.05 15918 15160 Zr4p 30.6 30.6 1.05 27982 26650 O 2s 22.1 22.1 0.14 4053 28948 Zr4d 6.7 6.7 0.09 6318 74329

Page 612: Vol 1 - XPS of Elements & Native Oxides - 1999

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ZIRCONIUM - Naturally Formed Native Oxide native ZrOxE

lect

ron

Cou

nts

Binding Energy (eV)

30000

1000 0800 600 400 200

O(A

uger

) O lo

ss

O

(1s)

Zr(

3s)

Zr

loss

Z

r(3p

1)Z

r(3p

3)

C(1

s)

Ar(

2p)

Zr

loss

Z

r(3d

)

Zr

(4s)

Zr(

4p)

O(2

s)Z

r(4d

)

Wide Scan Survey SpectrumCharge Neutralizer OFF

Page 613: Vol 1 - XPS of Elements & Native Oxides - 1999

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ZIRCONIUM - Naturally Formed Native Oxide native ZrOxE

l e c t r o n C

o u n t s

Binding Energy (eV)

18000

194 174190 186 182 178

Baseline: 189.45 to 177.53 eV# 1: 178.96 eV 0.80 eV 13996.60 cts 2.97%# 2: 179.93 eV 1.20 eV 7425.14 cts 1.58%# 3: 181.36 eV 0.84 eV 9296.06 cts 1.97%# 4: 182.33 eV 1.11 eV 4920.18 cts 1.04%# 5: 182.98 eV 1.22 eV 48810.75 cts 10.36%# 6: 183.40 eV 1.20 eV 212463.89 cts 45.08%# 7: 185.38 eV 1.13 eV 32266.66 cts 6.85%# 8: 185.80 eV 1.20 eV 142156.30 cts 30.16%4 iterations, chi square = 1.5900

Zr (3d)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 70:30

Zr 0

BE = 178.9 eV

ZrO2

BE = 183.4 eV

Zr(OH)2 ?

ZrO ?

Page 614: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

ZIRCONIUM - Naturally Formed Native Oxide native ZrOxE

l e c t r o n C

o u n t s

Binding Energy (eV)

16000

542 522538 534 530 526

Baseline: 537.37 to 527.80 eV# 1: 531.19 eV 1.33 eV 277858.69 cts 61.98%# 2: 532.70 eV 1.50 eV 118484.97 cts 26.43%# 3: 533.85 eV 1.75 eV 51960.82 cts 11.59%3 iterations, chi square = 2.2178

O (1s)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 80:20

ZrO2

BE = 531.2 eV

Page 615: Vol 1 - XPS of Elements & Native Oxides - 1999

© 1999 XPS International, Inc. xxx XPS Handbook of The Elements and Native Oxides

ZIRCONIUM - Naturally Formed Native Oxide native ZrOxE

l e c t r o n C

o u n t s

Binding Energy (eV)

3600

297 277293 289 285 281

Baseline: 292.92 to 282.73 eV# 1: 285.96 eV 1.29 eV 60202.83 cts 61.11%# 2: 287.22 eV 1.34 eV 16793.05 cts 17.05%# 3: 288.67 eV 1.29 eV 7865.59 cts 7.98%# 4: 289.94 eV 1.35 eV 13655.38 cts 13.86%3 iterations, chi square = 2.1810

C-C,C-R

COH,COR

COOH,COOR C=O,

O-C-O

C (1s)

Cu (2p3) at 932.47 eVAu (4f7) 83.96 eV

Ag FWHM: 0.75 eVG:L Ratio: 80:20

(0.96 eV above 285.0 eV)

Differential charging mightbe present in carbon andoxide layers. Pure metalBEs should not be affected.

CO3 ?

Page 616: Vol 1 - XPS of Elements & Native Oxides - 1999

4 Be 1s

20 Ca 2p3

40 Zr 3d5

3 4 5 6 7 8 9 10 11 12

13 14 15 16 17

181

2

Be° BeO

93 Np 94 Pu 95 Am 96 Cm 97 Bk 98 Cf 99 Es 100 Fm 101 Md 102 No 103 Lr

Mg° MgO

111.9 (0.79) 286.1

111.88 (0.69)

113.6 (1.73) 285.0 531.3 (1.47)

12 Mg 2p

49.7 (0.58) 286.5 49.77 (0.60)

51.5 (1.63) 285.0 529.8 (1.99)

398.6 (0.9) 285.8

398.46 (0.69)

401.9 (1.27) 285.0 530.0 (1.33)

453.8 (0.90) 285.2 453.95 (0.62)

458.7 (1.09) 285.0 530.0 (1.18)

512.2 (0.79) 285.0

512.22 (0.75)

517.3 (1.32) 285.0 530.2 (1.33)

574.2 (1.05) 284.6

574.37 (0.89)

575.7 (1.20) 285.0 530.1 (1.24)

638.7 (1.00) 286.4 638.74 (0.89)

641.5 (1.12) 285.0 529.5 (1.02)

155.9 (0.80) 286.0 155.92 (0.62)

156.6 (1.25) 285.0 531.0 (1.30)

179.0 (0.90) 285.3

178.80 (0.63)

182.4 (1.18) 285.0 530.3 (1.39)

202.1 (0.78) 285.0

202.35 (0.57)

207.4 (1.14) 285.0 530.4 (1.36)

227.8 (0.66) 285.4

227.94 (0.57)

233.1 (1.05) 285.0 531.0 (1.20)

14.4 (0.63) 285.7 14.32 (0.62)

17.1 (1.26) 285.0 530.5 (1.68)

21.8 (0.80) 285.0 21.78 (0.56)

26.8 (1.12) 285.0 531.0 (1.46)

31.4 (0.58) 285.3 31.38 (0.53)

35.8 (1.01) 285.0 530.6 (1.27)

706.6 (0.90) 284.9

706.78 (0.99)

709.8 (1.32) 285.0 532.9 (1.05)

778.1 (0.99) 284.9

778.26 (0.85)

779.5 (1.39) 285.0 530.1 (1.00)

280.0 (0.67)

--- 280.11 (0.59)

281.1 (0.79) 285.0 529.7 (0.95)

307.2 (0.73)

284.05307.21 (0.69)

308.9 (0.80) 285.0 530.5 (1.05)

335.1 (0.86) 284.5

335.10 (0.77)

337.0 (0.97) 285.0 530.7 (1.35)

852.6 (1.14) 284.8

852.65 (1.02)

853.8 (1.42) 285.0 529.4 (1.03)

932.7 (1.22) 284.6

932.68 (0.92)

932.5 (1.10) 285.0 530.5 (1.01)

368.2 (0.64) 284.7

368.28 (0.62)

367.5 (1.00) 285.0 529.4 (0.97)

60.8 (0.80) 284.4 60.88 (0.82)

62.0 (0.98) 285.0 530.2 (0.97)

71.0 (0.96) 284.3 71.15 (0.88)

75.1 (1.16) 285.0 531.3 (1.74)

405.0 (0.90) 285.0

405.04 (0.61)

404.0 (1.38) 285.0 528.6 (1.28)

1021.8 (1.10) 284.8

1021.76 (0.97)

1021.7 (1.50) 285.0 530.5 (1.11)

187.5 (0.87) 285.2 187.8 (1.03)

194.0 (2.40) 285.0 532.5 (2.22)

72.9 (0.62) 284.7 72.82 (0.41)

75.6 (1.41) 285.0 531.1 (1.56)

99.8 (0.57) 285.3 99.35 (0.45)

103.0 (1.14) 285.0 532.5(1.40)

29.3 (0.68) 285.0 29.28 (0.64)

33.2 (1.49) 285.0 532.2 (1.40)

18.7 (0.70) 285.0 18.5

(0.60)

20.7 (1.37) 285.0 531.3 (1.51)

41.8 (0.67) 284.5 41.69 (0.67)

45.1 (1.26) 285.0 532.0 (1.41)

54.8 (0.76) 284.2 54.90 (0.78)

59.3 (1.09) 285.0 532.6

443.8 (1.08) 284.9

443.87 (0.71)

444.3 (1.26) 285.0 529.9 (1.19)

484.9 (0.81) 284.7

485.01 (0.68)

487.3 (1.28) 285.0 531.1 (1.29)

528.2 (1.0) 284.6

528.26 (0.80)

530.4 (1.10) 285.0 531.2 (0.86)

572.8 (1.12) 284.2

572.97 (0.83)

576.5 (1.27) 285.0 530.7 (1.39)

117.8 (0.97) 285.1

117.77 (0.66)

118.2 (1.01) 285.0 528.8 (1.10)

136.9 (0.67) 284.9

136.95 (0.63)

137.5 (1.10) 285.0 528.9 (1.07)

157.0 (0.73) 284.6

157.05 (0.62)

158.8 (1.11) 285.0 529.6 (1.58)

40.3 (0.67) 285.3 40.30 (0.54)

46.8 (1.64) 285.0 532.1 (1.58)

21 Sc 2p3 22 Ti 2p3 23 V 2p3 24 Cr 2p3

39 Y 3d5 41 Nb 3d5 42 Mo 3d5

72 Hf 4f7 73 Ta 4f7 74 W 4f7

1 H 1s

3 Li 1s

11 Na 1s

19 K 2p3

37 Rb 3d5 38 Sr 3d5

55 Cs 3d5 56 Ba 3d5 57 La 3d5

88 Ra 4f787 Fr 4f7 89 Ac 4f7

25 Mn 2p3 26 Fe 2p3 27 Co 2p3 28 Ni 2p3 29 Cu 2p3 30 Zn 2p3

43 Tc 3d5 44 Ru 3d5 45 Rh 3d5 46 Pd 3d5 47 Ag 3d5 48 Cd 3d5

75 Re 4f7 76 Os 4f7 77 Ir 4f7 78 Pt 4f7 79 Au 4f7 80 Hg 4f7

5 B 1s 6 C 1s 7 N 1s 8 O 1s 9 F 1s

13 Al 2p3 14 Si 2p3 15 P 2p3 16 S 2p3 17 Cl 2p3

10 Ne 1s

18 Ar 2p3

36 Kr 3d5

54 Xe 3d5

2 He 1s

31 Ga 3d5 32 Ge 3d5 33 As 3d5 34 Se 3d5 35 Br 3d5

49 In 3d5 50 Sn 3d5 51 Sb 3d5 52 Te 3d5 53 I 3d5

81 Tl 4f7 82 Pb 4f7 83 Bi 4f7 84 Po 4f7 85 At 4f7 86 Rn 4f7

69 Tm 4d5 70 Yb 4f7 71 Lu 4f758 Ce 3d5 59 Pr 3d5 60 Nd 3d5 61 Pm 4d5 62 Sm 4d5 63 Eu 4d5 64 Gd 4d5

90 Th 4f7 91 Pa 4f7 92 U 4f7

65 Tb 4d5 66 Dy 4d5 67 Ho 4d5 68 Er 4d5

Li° LiOH

Na° NaCl

K° KI

Rb° RbOAc

Ca° CaO Sc° Sc2O3 Ti° TiO2 V° V2O5 Cr° Cr2O3

Y° Y2O3Sr° SrCO3 Zr° ZrO2 Nb° Nb2O5 Mo° MoO3

Hf° HfO2 Ta° Ta2O5Ba° BaOAc W° WO3La° La2O3Cs° CsCl

H2° LiH

Mn° MnO2 Fe° Fe2O3 Co° Co3O4 Ni° NiO Cu° Cu2O Zn° ZnO

Tc° Ru° RuO2 Rh° Rh2O3 Pd° PdO Ag° Ag2O Cd° CdO

Os° OsO4 Ir° IrO2 Pt° PtO2 Au° Hg° HgORe° Re2O7

B° B2O3 HOPG

Al° Al2O3 Si° SiO2 P° InP

Ga° Ga2O3 Ge° GeO2 As° As2O3 Se° SeOx

In° In2O3 Sn° SnO2 Sb° Sb2O5 Te° TeO2

Bi° Bi2O3Pb° PbOTl° Tl2O3

Dy° Dy2O3 Ho° Ho2O3 Er° Er2O3 Tm° Tm2O3 Yb° Yb2O3 Lu° Lu2O3Pr° Pr2O5 Nd° Nd2O3 Pm° Pm2O3 Sm° Sm2O3 Eu° Eu2O3 Gd° Gd2O3Ce° CeO2 Tb° Tb3O7

Th° ThO2 U° U2O3

72.9 (0.62) 284.7 72.82 (0.41)

74.3 (1.41) 285.0 531.1 (1.56)

13 Al 2p3

Al° Al2O3Al (2p3) BE of Major Oxide Species in Pure OxideAl (2p3) FWHM of Major Oxide Species in Pure Oxide

O (1s) BE of Major Oxygen Species in Pure OxideO (1s) FWHM of Major Oxygen Species in Pure Oxide

Al (2p3) BE of Al° under Native OxideAl (2p3) FWHM of Al° under Native Oxide

C (1s) BE Defined to be at 285.0 eVReliable Reference BE for Ion Etched, Pure Al°

Al (2p3) FWHM of Ion Etched , Pure Al°

C (1s) BE of Hydrocarbons Captured by Ion Etched Al°

Most Common Oxide or Chemical Compound of ElementAbbreviation for Element

Main XPS Signal for Element of Interest Atomic Number of Element

Fundamental XPS Data from Pure Elements, Pure Oxides, and Chemical Compounds

346.5 (?) 284.6 346.5 (1.07)

347.1 (1.81) 285.0 531.5 (1.57)

54.9 (1.65) 285.0 531.8 (1.6)

1072.0 (1.40) 285.0 199.3 (1.19)

293.2 (1.11) 285.0 619.2 (1.30)

109.7 (1.40) 285.0 530.9 (1.6)

133.7 (1.63) 285.0 531.5 (1.9)

780.0 (1.80) 285.0 531.4 (1.83)

284.5 (0.42)

BN CaF2398.9 (1.10) 285.0 191.3 (1.03)

685.1 (1.53) 285.0 348.1 (1.6)

130.13 (0.67) 285.0

MoS2S°162.7 (0.39)

229.7 (0.80)

199.3 (1.19) 285.0

1072.0 (1.40)

68.8 (0.92) 285.0 293.0 (1.31)

619.2 (1.30) 285.0 293.2 (1.11)

NaCl

KBr

KI

Kapton

Ar+/C

Kr+/CKr+/Be

Ar+/Be

Ne+/Be Ne+/C

Xe+/Be Xe+/C

He+/Be He+/C

99.8 ---

285.0 99.81 (0.65)

242.1 (0.90) 285.0

100.7 (1.06)

(285.0) 532.9 (0.96)

Au2O3

84.1 (0.83) 284.1 83.98 (0.68)

88.1 (1.12) 285.0 531.6 (1.13)

--- --- ---

123.2 (2.5?)

128.2 ---

284.3 128.18 (1.08)

140.2 ---

281.4 140.33 (1.02)

145.9 --- ---

146.02 (1.33)

152.4 --- ---

152.30 (1.88)

159.8 --- ---

159.58 (1.50)

167.7 --- ---

167.25 (1.93)

175.3 ---

285.3 175.37 (1.92)

1.07 ---

285.6 (182.39)

(0.61)

7.10 ---

284.6 7.1

(0.69)

(931.98) --- ---

111.2 (2.17)

(980.86) --- ---

118.0 (1.80)

882.1 (2.0) 285.0 529.6 (2.00)

All non-conductive materials were referenced to adventitious hydrocarbon with C (1s) BE at 285.0eV. Energy resolution settings for pure oxide data gave FWHM <0.75 eV for Ag (3d5) of ion etched Ag°. All non-conductors were analyzed with the Flood-Gun Mesh-Screen 0.5-1.0 mm above the specimen. C (1s) BEs for "hydrocarbons" on elements were collected from carbon captured by ion etched elements. Carbon from the cryo-pumped vacuum (3x10(-9) torr) was analyzed >10 hours after ion etching. Energy resolution settings for ion etched elements gave FWHM <0.50 eV forAg (3d5) of ion etched Ag°. Calibration was: Cu (2p3) at 932.67 ±0.05 eV, Cu (3s) at 122.45 ±0.05 eV, and Au(4f7) at 83.98 eV.

Radioactive

Radioactive

Radioactive

Radioactive

Radioactive

Radioactive

Radioactive

Radioactive

Radioactive

Radioactive

Radioactive

Radioactive

Radioactive

Radioactive

Radioactive

Radioactive

Radioactive

Radioactive

Radioactive

Radioactive

164.0 (0.72) 285.0

SiO2532.5 (1.40) 285.0 103.0 (1.14)

CuO529.7 (0.98) 284.9 934.0 (1.42)

Black

669.6 (1.13) 285.0

Teflon

PVC

284.4 (1.04)

199.8 (1.7) 285.0

688.9 (1.8) 285.0 291.9 (1.6)

400.9 (1.31) 285.0

128.8 (0.62) 285.0 444.7 (0.78)

B. Vincent Crist Last Update 2-22-99

86.94 (0.79) 285.0

C(1s) BE = 285.0 eV Charge Referencing

Copyrights © 1999 XPS International Inc.

933.1 (4.4) 285.0 528.2 (1.4)

(134.9) (10)

285.0 531.7 (2.4)

135.6 (3.7) 285.0 529.2 (1.4)

(1186.8) (5.4) 285.0 529.0 (1.7)

(149.9) (?)

285.0 529.5 (1.6)

(156.1) (?)

285.0 529.2 (1.7)

161.3 ((6.0) 285.0 529.3 (1.7)

168.5 (3.8) 285.0 529.2 (1.9)

176.3 (3.4) 285.0 529.6 (1.7)

184.9 (3.4) 285.0 529.4 (2.0)

8.4 (3.0) 285.0 529.6 (1.8)

The FWHM and BE values presented in this table were all obtained by one scientist using two SSI XPS systems, which yield a theoretical energy resolution limit of about 0.1 eV and were equipped with monochromatic Aluminum X-ray sources which have a theoretical energy resolution limit of about 0.16 eV. The BEs for the ion etched elements can be used as reliable secondary energy reference values within a standard deviation of 0.055. All other BE values are <±0.15 eV.

834.7 (3.0) 285.0 529.2 (1.6)

724.6 (2.08) 285.0 199.2

Page 617: Vol 1 - XPS of Elements & Native Oxides - 1999

Relative Sensitivity Factors (RSFs) Used for the SSI Instruments versus Pass Energy Settings(Note: For SSI systems the electron collection lense to X-ray source angle, which affects RSF values, is 71 degrees.)

XPS BE Scofield Atom PE=150 V PE=150 PE=100 PE=100 V PE=50 V PE=50 V PE=25 V PE=25 VElement Signal (eV) RSFs # Exp=1.2 Exp=1.0 Exp=0.8 Exp=0.7 Exp=0.5 Exp=0.3 Exp=0 Exp= -0.1

Ag 4d 4.5 1.55 47 1.994 1.912 1.833 1.795 1.721 1.651 1.550 1.518Ag 4p 58.0 1.36 47 1.674 1.617 1.562 1.535 1.483 1.432 1.360 1.337Ag 4p 58.6 2.06 47 2.534 2.448 2.365 2.325 2.246 2.169 2.060 2.025Ag 4s 97.0 0.644 47 0.767 0.745 0.723 0.713 0.693 0.673 0.644 0.635Ag 3d5 368.2 10.66 47 9.780 9.922 10.065 10.138 10.284 10.433 10.660 10.737Ag 3d 371.0 18.04 47 16.502 16.749 17.000 17.126 17.382 17.643 18.040 18.174Ag 3d3 374.2 7.38 47 6.728 6.832 6.938 6.992 7.101 7.211 7.380 7.437Ag 3p3 573.6 8.06 47 5.797 6.124 6.470 6.650 7.026 7.423 8.060 8.284Ag 3p1 604.0 4.03 47 2.783 2.960 3.149 3.247 3.454 3.674 4.030 4.156Ag 3s 719.6 2.93 47 1.710 1.870 2.046 2.140 2.341 2.561 2.930 3.065Ag Auger 1128.9 0 47 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Ag Auger 1135.0 0 47 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Ag Auger 1190.0 0 47 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Ag Auger 1225.0 0 47 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Al 2p 72.7 0.537 13 0.653 0.632 0.612 0.602 0.583 0.564 0.537 0.528Al loss 88.0 0 13 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Al loss 103.7 0 13 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Al 2s 117.9 0.753 13 0.880 0.858 0.836 0.825 0.804 0.783 0.753 0.743Al loss 133.4 0 13 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Al loss 148.8 0 13 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Ar 3p 8.9 0.2418 18 0.310 0.297 0.285 0.279 0.268 0.257 0.242 0.237Ar 3s 22.3 0.227 18 0.288 0.277 0.266 0.261 0.251 0.241 0.227 0.223Ar 2p3 241.8 2.02 18 2.107 2.093 2.078 2.071 2.056 2.042 2.020 2.013Ar 2p 242.0 3.04 18 3.171 3.149 3.127 3.116 3.094 3.072 3.040 3.029Ar 2p1 243.9 1.02 18 1.062 1.055 1.048 1.044 1.037 1.030 1.020 1.017Ar 2s 319.5 1.97 18 1.902 1.913 1.925 1.930 1.942 1.953 1.970 1.976

(c) 1999 XPS International, Inc. xxx Handbook of The Elements and Native Oxides

Page 618: Vol 1 - XPS of Elements & Native Oxides - 1999

Relative Sensitivity Factors (RSFs) Used for the SSI Instrument versus Pass Energy Settings

XPS BE Scofield Atom PE=150 V PE=150 PE=100 PE=100 V PE=50 V PE=50 V PE=25 V PE=25 VElement Signal (eV) RSFs # Exp=1.2 Exp=1.0 Exp=0.8 Exp=0.7 Exp=0.5 Exp=0.3 Exp=0 Exp= -0.1

As 4p 9.1 0.121 33 0.155 0.149 0.143 0.140 0.134 0.129 0.121 0.119As 3d5 41.5 1.21 33 1.510 1.455 1.402 1.377 1.327 1.279 1.210 1.188As 3d 42.0 1.82 33 2.270 2.188 2.109 2.070 1.996 1.923 1.820 1.787As 3d3 42.2 0.61 33 0.761 0.733 0.707 0.694 0.669 0.645 0.610 0.599As loss 59.2 0 33 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000As 3p3 140.7 2.68 33 3.071 3.002 2.934 2.901 2.836 2.773 2.680 2.650As 3p 142.0 4.07 33 4.658 4.554 4.453 4.403 4.305 4.210 4.070 4.024As 3p1 147.0 1.39 33 1.584 1.550 1.516 1.500 1.468 1.436 1.390 1.375As 3s 225.7 1.32 33 1.399 1.385 1.372 1.365 1.352 1.339 1.320 1.314As Auger 230.0 0 33 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000As Auger 261.0 0 33 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000As Auger 339.0 0 33 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000As Auger 359.0 0 33 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000As Auger 371.0 0 33 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000As Auger 425.0 0 33 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000As Auger 458.0 0 33 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000As Auger 468.0 0 33 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000As Auger 519.0 0 33 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000As 2p3 1323.9 0 33 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000As 2p1 1359.5 0 33 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000At 6p 8.0 0.1892 85 0.243 0.233 0.223 0.219 0.210 0.201 0.189 0.185At 6s 18.0 0.1033 85 0.131 0.126 0.121 0.119 0.114 0.110 0.103 0.101At 5d 40.0 3.63 85 4.535 4.370 4.211 4.133 3.983 3.838 3.630 3.563At 5p3 115.0 1.58 85 1.852 1.804 1.756 1.733 1.688 1.644 1.580 1.559At 5p1 148.0 0.584 85 0.665 0.651 0.637 0.630 0.616 0.603 0.584 0.578At 5s 195.0 0.605 85 0.660 0.650 0.641 0.636 0.627 0.618 0.605 0.601At 4f 210.0 29.36 85 31.572 31.192 30.817 30.631 30.262 29.898 29.360 29.183At 4d5 507.0 14.29 85 11.184 11.650 12.136 12.386 12.903 13.441 14.290 14.585At 4d3 533.0 9.65 85 7.313 7.658 8.021 8.208 8.597 9.004 9.650 9.876

(c) 1999 XPS International, Inc. xxx Handbook of The Elements and Native Oxides

Page 619: Vol 1 - XPS of Elements & Native Oxides - 1999

Relative Sensitivity Factors (RSFs) Used for the SSI Instrument versus Pass Energy Settings

XPS BE Scofield Atom PE=150 V PE=150 PE=100 PE=100 V PE=50 V PE=50 V PE=25 V PE=25 VElement Signal (eV) RSFs # Exp=1.2 Exp=1.0 Exp=0.8 Exp=0.7 Exp=0.5 Exp=0.3 Exp=0 Exp= -0.1

At 4p3 740.0 6.77 85 3.825 4.207 4.627 4.852 5.337 5.869 6.770 7.100At 4p1 886.0 2.04 85 0.888 1.020 1.171 1.256 1.442 1.657 2.040 2.186At 4s 1042.0 1.96 85 0.595 0.725 0.885 0.977 1.192 1.455 1.960 2.165Au 5d 5.8 1.808 79 2.323 2.228 2.137 2.093 2.007 1.925 1.808 1.771Au 5p3 56.8 1.1 79 1.355 1.309 1.264 1.242 1.200 1.159 1.100 1.081Au 5p1 74.0 0.463 79 0.562 0.544 0.527 0.519 0.502 0.486 0.463 0.456Au 4f7 84.0 9.58 79 11.534 11.182 10.842 10.675 10.350 10.035 9.580 9.433Au 4f 85.0 17.12 79 20.594 19.969 19.364 19.068 18.490 17.929 17.120 16.858Au 4f5 87.7 7.54 79 9.049 8.778 8.515 8.387 8.135 7.892 7.540 7.426Au 5s 108.0 0.479 79 0.565 0.550 0.535 0.527 0.513 0.499 0.479 0.472Au 4d5 334.0 11.74 79 11.168 11.261 11.355 11.403 11.498 11.594 11.740 11.789Au 4d3 353.0 8.06 79 7.516 7.604 7.693 7.738 7.829 7.920 8.060 8.107Au 4p3 546.3 5.89 79 4.389 4.609 4.841 4.961 5.210 5.472 5.890 6.036Au 4p1 642.4 2.14 79 1.401 1.504 1.614 1.671 1.794 1.925 2.140 2.217Au 4s 761.2 1.92 79 1.048 1.159 1.282 1.349 1.492 1.650 1.920 2.019B 2p 5.0 0 5 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000B 1s 188.0 0.486 5 0.533 0.525 0.517 0.513 0.505 0.497 0.486 0.482B loss 213.0 0 5 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000

Ba 5p 10.0 0.602 56 0.771 0.740 0.710 0.695 0.667 0.640 0.602 0.590Ba 5s 40.0 0.21 56 0.262 0.253 0.244 0.239 0.230 0.222 0.210 0.206Ba 4d3 84.0 2.4 56 2.889 2.801 2.716 2.674 2.593 2.514 2.400 2.363Ba 4d 84.7 5.86 56 7.051 6.837 6.629 6.528 6.330 6.137 5.860 5.770Ba 4d5 86.0 3.46 56 4.158 4.033 3.911 3.852 3.736 3.623 3.460 3.407Ba 4p 173.0 2.73 56 3.038 2.984 2.932 2.906 2.854 2.804 2.730 2.706Ba 4s 248.0 1.13 56 1.172 1.165 1.158 1.154 1.147 1.140 1.130 1.127Ba 3d5 780.0 25.84 56 13.665 15.196 16.898 17.820 19.816 22.036 25.840 27.249Ba 3d3 795.2 17.92 56 9.233 10.312 11.517 12.171 13.594 15.182 17.920 18.938Ba loss 802.0 0 56 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Ba loss 817.0 0 56 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000

(c) 1999 XPS International, Inc. xxx Handbook of The Elements and Native Oxides

Page 620: Vol 1 - XPS of Elements & Native Oxides - 1999

Relative Sensitivity Factors (RSFs) Used for the SSI Instrument versus Pass Energy Settings

XPS BE Scofield Atom PE=150 V PE=150 PE=100 PE=100 V PE=50 V PE=50 V PE=25 V PE=25 VElement Signal (eV) RSFs # Exp=1.2 Exp=1.0 Exp=0.8 Exp=0.7 Exp=0.5 Exp=0.3 Exp=0 Exp= -0.1

Ba Auger 886.5 0 56 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Ba Auger 898.0 0 56 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Ba 3p3 1063.0 11.71 56 3.352 4.129 5.086 5.645 6.953 8.565 11.710 12.997Ba 3p1 1137.0 5.42 56 1.232 1.577 2.019 2.284 2.924 3.743 5.420 6.132Be 1s 111.8 0.195 4 0.229 0.223 0.217 0.214 0.209 0.203 0.195 0.192Be loss 130.0 0 4 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Bi 6p1 1.0 0 83 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Bi 6p3 3.2 0.0841 83 0.108 0.104 0.100 0.097 0.093 0.090 0.084 0.082Bi 6s 10.5 0.084 83 0.108 0.103 0.099 0.097 0.093 0.089 0.084 0.082Bi 5d 23.8 3 83 3.799 3.652 3.511 3.443 3.310 3.182 3.000 2.942Bi 5d5 24.0 1.76 83 2.228 2.142 2.060 2.020 1.942 1.867 1.760 1.726Bi 5d3 26.0 1.24 83 1.567 1.507 1.450 1.422 1.367 1.315 1.240 1.216Bi 5p3 92.8 1.41 83 1.685 1.636 1.588 1.564 1.519 1.474 1.410 1.389Bi 5p1 118.2 0.546 83 0.638 0.622 0.606 0.598 0.583 0.568 0.546 0.539Bi 4f7 157.0 13.9 83 15.696 15.381 15.073 14.921 14.622 14.329 13.900 13.760Bi 4f 157.0 24.83 83 28.037 27.475 26.924 26.653 26.119 25.596 24.830 24.580Bi loss 157.0 0 83 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Bi 5s 160.0 0.563 83 0.634 0.622 0.609 0.603 0.592 0.580 0.563 0.557Bi 4f5 162.3 10.93 83 12.283 12.046 11.814 11.700 11.475 11.254 10.930 10.824Bi 4d5 440.0 13.44 83 11.388 11.706 12.034 12.202 12.543 12.895 13.440 13.627Bi 4d3 464.0 9.14 83 7.532 7.779 8.034 8.164 8.432 8.708 9.140 9.289Bi 4p3 679.0 6.48 83 4.023 4.355 4.716 4.907 5.313 5.752 6.480 6.743Bi 4p1 805.0 2.1 83 1.064 1.191 1.334 1.412 1.582 1.772 2.100 2.222Bi 4s 936.6 1.96 83 0.767 0.897 1.049 1.134 1.326 1.550 1.960 2.119Br 4p 5.0 0.328 35 0.422 0.404 0.388 0.380 0.364 0.349 0.328 0.321Br 4s 27.0 0.1863 35 0.235 0.226 0.218 0.213 0.205 0.197 0.186 0.183Br 3d 67.9 2.84 35 3.466 3.353 3.244 3.190 3.086 2.985 2.840 2.793Br 3d3 68.5 1.16 35 1.415 1.369 1.324 1.303 1.260 1.219 1.160 1.141Br 3d5 69.6 1.68 35 2.048 1.981 1.917 1.886 1.824 1.765 1.680 1.653

(c) 1999 XPS International, Inc. xxx Handbook of The Elements and Native Oxides

Page 621: Vol 1 - XPS of Elements & Native Oxides - 1999

Relative Sensitivity Factors (RSFs) Used for the SSI Instrument versus Pass Energy Settings

XPS BE Scofield Atom PE=150 V PE=150 PE=100 PE=100 V PE=50 V PE=50 V PE=25 V PE=25 VElement Signal (eV) RSFs # Exp=1.2 Exp=1.0 Exp=0.8 Exp=0.7 Exp=0.5 Exp=0.3 Exp=0 Exp= -0.1

Br loss 82.0 0 35 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Br loss 96.0 0 35 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Br 3p3 181.2 3.31 35 3.656 3.596 3.537 3.508 3.450 3.393 3.310 3.283Br 3p 182.0 5.03 35 5.552 5.461 5.372 5.328 5.241 5.156 5.030 4.989Br 3p1 187.8 1.72 35 1.888 1.859 1.830 1.816 1.788 1.761 1.720 1.707Br 3s 255.0 1.53 35 1.576 1.568 1.560 1.557 1.549 1.541 1.530 1.526C 2s 18.2 0.15 6 0.191 0.183 0.176 0.173 0.166 0.159 0.150 0.147C 1s 285.0 1 6 1.000 1.000 1.000 1.000 1.000 1.000 1.000 1.000C loss 313.0 0 6 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000C Auger 1221.4 0 6 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Ca 3d 5.0 0 20 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Ca 3p 23.5 0.507 20 0.642 0.617 0.593 0.582 0.559 0.538 0.507 0.497Ca 3s 42.1 0.351 20 0.438 0.422 0.407 0.399 0.385 0.371 0.351 0.345Ca 2p 346.6 5.07 20 4.760 4.810 4.861 4.887 4.938 4.991 5.070 5.097Ca 2s 437.8 2.59 20 2.200 2.261 2.323 2.355 2.420 2.486 2.590 2.625Ca Auger 1194.0 0 20 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Cd 5p 2.0 0 48 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Cd 4d 10.7 1.97 48 2.521 2.420 2.322 2.275 2.183 2.095 1.970 1.930Cd 4d3 11.6 0.79 48 1.010 0.970 0.931 0.912 0.875 0.840 0.790 0.774Cd 4p 68.8 2.25 48 2.744 2.655 2.568 2.526 2.444 2.364 2.250 2.213Cd 4s 109.9 0.692 48 0.815 0.793 0.772 0.761 0.741 0.721 0.692 0.683Cd 3d5 405.0 11.95 48 10.533 10.757 10.985 11.102 11.338 11.579 11.950 12.076Cd 3d 408.0 20.22 48 17.763 18.150 18.547 18.748 19.157 19.575 20.220 20.440Cd 3d3 411.7 8.27 48 7.235 7.398 7.565 7.650 7.822 7.998 8.270 8.363Cd 3p3 617.0 8.5 48 5.766 6.152 6.563 6.778 7.231 7.714 8.500 8.779Cd 3p1 651.0 4.22 48 2.729 2.935 3.156 3.273 3.519 3.784 4.220 4.376Cd 3s 772.8 3.04 48 1.627 1.806 2.004 2.111 2.343 2.600 3.040 3.203Cd Auger 1103.1 0 48 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Cd Auger 1109.8 0 48 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000

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Relative Sensitivity Factors (RSFs) Used for the SSI Instrument versus Pass Energy Settings

XPS BE Scofield Atom PE=150 V PE=150 PE=100 PE=100 V PE=50 V PE=50 V PE=25 V PE=25 VElement Signal (eV) RSFs # Exp=1.2 Exp=1.0 Exp=0.8 Exp=0.7 Exp=0.5 Exp=0.3 Exp=0 Exp= -0.1

Ce 4f 1.0 0.1389 58 0.179 0.172 0.165 0.161 0.154 0.148 0.139 0.136Ce 5p 18.0 0.66 58 0.840 0.807 0.775 0.760 0.730 0.701 0.660 0.647Ce 5s 36.0 0.23 58 0.288 0.278 0.267 0.262 0.253 0.243 0.230 0.226Ce 4d 110.0 6.93 58 8.158 7.939 7.726 7.622 7.417 7.218 6.930 6.836Ce 4p3 207.0 3.03 58 3.268 3.227 3.186 3.166 3.127 3.088 3.030 3.011Ce 4p1 223.0 1.47 58 1.561 1.546 1.530 1.523 1.507 1.492 1.470 1.463Ce 4s 290.0 1.24 58 1.234 1.235 1.236 1.236 1.237 1.238 1.240 1.241Ce Auger 833.0 0 58 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Ce 3d5 884.0 30.5 58 13.325 15.297 17.561 18.815 21.600 24.797 30.500 32.679Ce 3d3 902.0 21.12 58 8.897 10.276 11.869 12.755 14.732 17.015 21.120 22.698Ce 3p3 1184.0 12.53 58 2.396 3.156 4.158 4.773 6.289 8.285 12.530 14.382Ce 3p1 1272.0 6.26 58 0.793 1.118 1.578 1.875 2.646 3.734 6.260 7.437Cl 3p 5.5 3 17 3.856 3.698 3.546 3.473 3.331 3.194 3.000 2.938Cl 3s 15.7 0.1852 17 0.236 0.227 0.218 0.213 0.205 0.197 0.185 0.181Cl 2p 198.7 2.28 17 2.478 2.444 2.410 2.393 2.360 2.328 2.280 2.264Cl 2p3 198.9 1.51 17 1.641 1.618 1.596 1.585 1.563 1.542 1.510 1.500Cl 2p1 200.5 0.775 17 0.841 0.829 0.818 0.813 0.802 0.791 0.775 0.770Cl loss 217.5 0 17 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Cl 2s 270.0 1.69 17 1.715 1.711 1.707 1.705 1.701 1.696 1.690 1.688Cl loss 286.0 0 17 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Cl Auger 1304.0 0 17 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Co 3d 1.0 0.2664 27 0.344 0.329 0.316 0.309 0.296 0.284 0.266 0.261Co 3p 59.0 1.93 27 2.373 2.293 2.215 2.177 2.104 2.032 1.930 1.897Co 3s 100.9 0.818 27 0.971 0.943 0.917 0.904 0.878 0.854 0.818 0.806Co Auger 697.4 0 27 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Co Auger 713.0 0 27 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Co 2p3 778.3 12.62 27 6.694 7.440 8.269 8.718 9.690 10.770 12.620 13.305Co 2p1 793.7 6.54 27 3.378 3.772 4.210 4.449 4.966 5.544 6.540 6.910Co Auger 830.5 0 27 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000

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Relative Sensitivity Factors (RSFs) Used for the SSI Instrument versus Pass Energy Settings

XPS BE Scofield Atom PE=150 V PE=150 PE=100 PE=100 V PE=50 V PE=50 V PE=25 V PE=25 VElement Signal (eV) RSFs # Exp=1.2 Exp=1.0 Exp=0.8 Exp=0.7 Exp=0.5 Exp=0.3 Exp=0 Exp= -0.1

Co Auger 837.9 0 27 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Co 2s 925.3 4.88 27 1.958 2.280 2.655 2.865 3.335 3.884 4.880 5.266Cr 3d 1.0 0.0651 24 0.084 0.080 0.077 0.076 0.072 0.069 0.065 0.064Cr 3p 42.1 1.173 24 1.463 1.410 1.359 1.334 1.286 1.240 1.173 1.152Cr 3s 74.2 0.596 24 0.724 0.701 0.678 0.667 0.646 0.626 0.596 0.586Cr 2p3 574.3 7.69 24 5.526 5.839 6.169 6.342 6.701 7.080 7.690 7.905Cr 2p 575.0 11.67 24 8.378 8.854 9.357 9.619 10.165 10.742 11.670 11.997Cr 2p1 583.5 3.98 24 2.825 2.991 3.167 3.259 3.450 3.653 3.980 4.095Cr 2s 695.7 3.91 24 2.367 2.574 2.798 2.918 3.172 3.449 3.910 4.077Cr Auger 915.9 0 24 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Cr Auger 959.5 0 24 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Cr Auger 997.3 0 24 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Cr Auger 1003.6 0 24 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Cr Auger 1027.2 0 24 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Cs 5p3 11.1 0.332 55 0.425 0.408 0.391 0.383 0.368 0.353 0.332 0.325Cs 5p 12.0 0.502 55 0.642 0.616 0.591 0.579 0.556 0.534 0.502 0.492Cs 5p1 12.6 0.1697 55 0.217 0.208 0.200 0.196 0.188 0.180 0.170 0.166Cs 5s 23.0 0.1843 55 0.234 0.224 0.216 0.212 0.203 0.196 0.184 0.181Cs 4d5 75.0 3.1 55 3.761 3.642 3.526 3.470 3.360 3.253 3.100 3.050Cs 4d 76.0 5.25 55 6.364 6.163 5.969 5.874 5.688 5.509 5.250 5.166Cs 4d3 79.0 2.15 55 2.600 2.519 2.440 2.402 2.327 2.255 2.150 2.116Cs 4p3 158.5 2.56 55 2.887 2.829 2.773 2.746 2.691 2.638 2.560 2.535Cs 4p1 180.9 1.27 55 1.403 1.380 1.357 1.346 1.324 1.302 1.270 1.259Cs 4s 238.0 1.08 55 1.131 1.122 1.114 1.109 1.101 1.093 1.080 1.076Cs 3d5 724.8 23.76 55 13.752 15.064 16.502 17.271 18.919 20.724 23.760 24.868Cs 3d3 740.0 16.46 55 9.299 10.228 11.249 11.797 12.975 14.270 16.460 17.262Cs loss 749.0 0 55 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Cs loss 761.8 0 55 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Cs Auger 844.2 0 55 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000

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Relative Sensitivity Factors (RSFs) Used for the SSI Instrument versus Pass Energy Settings

XPS BE Scofield Atom PE=150 V PE=150 PE=100 PE=100 V PE=50 V PE=50 V PE=25 V PE=25 VElement Signal (eV) RSFs # Exp=1.2 Exp=1.0 Exp=0.8 Exp=0.7 Exp=0.5 Exp=0.3 Exp=0 Exp= -0.1

Cs Auger 870.5 0 55 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Cs Auger 918.6 0 55 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Cs Auger 932.0 0 55 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Cs Auger 952.5 0 55 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Cs 3p3 998.0 11.38 55 3.866 4.628 5.540 6.062 7.257 8.688 11.380 12.451Cs 3p1 1065.5 5.29 55 1.503 1.854 2.287 2.539 3.132 3.862 5.290 5.875Cs 3s 1217.0 3.73 55 0.621 0.837 1.129 1.311 1.767 2.383 3.730 4.331Cu 3d 2.8 0.589 29 0.759 0.727 0.697 0.683 0.655 0.627 0.589 0.577Cu 3p 74.9 2.478 29 3.007 2.911 2.819 2.774 2.686 2.601 2.478 2.438Cu 3s 122.4 0.957 29 1.114 1.086 1.059 1.046 1.020 0.994 0.957 0.945Cu Auger 548.1 0 29 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Cu Auger 568.1 0 29 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Cu Auger 628.2 0 29 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Cu Auger 635.0 0 29 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Cu Auger 647.5 0 29 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Cu Auger 719.5 0 29 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Cu 2p3 932.6 16.73 29 6.607 7.714 9.006 9.731 11.360 13.263 16.730 18.077Cu 2p1 972.2 8.66 29 3.129 3.708 4.393 4.782 5.666 6.714 8.660 9.427Cu 2s 1097.2 5.46 29 1.413 1.770 2.217 2.481 3.108 3.894 5.460 6.111Dy 5d 4.8 0 66 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Dy 4f 7.8 2.49 66 3.194 3.064 2.940 2.879 2.762 2.650 2.490 2.439Dy 5p3 22.0 0.54 66 0.685 0.658 0.633 0.620 0.596 0.573 0.540 0.529Dy 5p1 29.0 0.27 66 0.340 0.328 0.315 0.309 0.297 0.286 0.270 0.265Dy 5s 48.0 0.287 66 0.356 0.344 0.331 0.326 0.314 0.303 0.287 0.282Dy 4d 155.0 11.43 66 12.929 12.666 12.409 12.282 12.032 11.788 11.430 11.313Dy Auger 210.9 0 66 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Dy 4p3 295.6 4.12 66 4.076 4.084 4.091 4.095 4.102 4.109 4.120 4.124Dy 4p1 332.0 1.88 66 1.792 1.806 1.821 1.828 1.843 1.858 1.880 1.888Dy Auger 363.7 0 66 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000

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Relative Sensitivity Factors (RSFs) Used for the SSI Instrument versus Pass Energy Settings

XPS BE Scofield Atom PE=150 V PE=150 PE=100 PE=100 V PE=50 V PE=50 V PE=25 V PE=25 VElement Signal (eV) RSFs # Exp=1.2 Exp=1.0 Exp=0.8 Exp=0.7 Exp=0.5 Exp=0.3 Exp=0 Exp= -0.1

Dy 4s 412.6 1.58 66 1.381 1.412 1.444 1.461 1.494 1.528 1.580 1.598Dy Auger 513.9 0 66 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Dy 3d5 1296.2 0 66 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Dy 3d3 1335.1 0 66 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Er 4f 5.0 3.82 68 4.912 4.710 4.517 4.423 4.242 4.068 3.820 3.741Er 5p 29.0 0.849 68 1.070 1.030 0.991 0.972 0.935 0.900 0.849 0.833Er 5s 57.4 0.298 68 0.367 0.354 0.342 0.336 0.325 0.314 0.298 0.293Er Auger 98.7 0 68 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Er 4d5 167.3 7.41 68 8.290 8.136 7.985 7.911 7.765 7.621 7.410 7.341Er 4d3 169.3 5.15 68 5.751 5.646 5.543 5.492 5.392 5.294 5.150 5.103Er Auger 182.8 0 68 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Er Auger 274.5 0 68 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Er 4p3 320.8 4.37 68 4.214 4.240 4.266 4.278 4.304 4.331 4.370 4.383Er 4p1 366.0 1.95 68 1.793 1.819 1.844 1.857 1.883 1.910 1.950 1.964Er 4s 450.3 1.64 68 1.373 1.414 1.457 1.479 1.523 1.569 1.640 1.664Er Auger 586.2 0 68 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Er Auger 634.5 0 68 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Er Auger 715.1 0 68 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Er 3d5 1358.7 0 68 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Eu 4f 6.9 1.155 63 1.483 1.422 1.364 1.336 1.282 1.229 1.155 1.131Eu 5p 19.0 0.77 63 0.979 0.940 0.904 0.886 0.851 0.818 0.770 0.755Eu 5s 39.0 0.268 63 0.335 0.323 0.311 0.305 0.294 0.283 0.268 0.263Eu 4d 128.2 9.73 63 11.273 11.000 10.733 10.602 10.345 10.095 9.730 9.611Eu 4p3 255.0 3.72 63 3.832 3.813 3.794 3.785 3.766 3.748 3.720 3.711Eu 4p1 289.0 1.75 63 1.743 1.744 1.745 1.746 1.747 1.748 1.750 1.751Eu 4s 363.0 1.46 63 1.347 1.365 1.384 1.393 1.412 1.431 1.460 1.470Eu Auger 370.0 0 63 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Eu Auger 515.0 0 63 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Eu Auger 655.0 0 63 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000

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Page 626: Vol 1 - XPS of Elements & Native Oxides - 1999

Relative Sensitivity Factors (RSFs) Used for the SSI Instrument versus Pass Energy Settings

XPS BE Scofield Atom PE=150 V PE=150 PE=100 PE=100 V PE=50 V PE=50 V PE=25 V PE=25 VElement Signal (eV) RSFs # Exp=1.2 Exp=1.0 Exp=0.8 Exp=0.7 Exp=0.5 Exp=0.3 Exp=0 Exp= -0.1

Eu 3d5 1126.0 43.24 63 10.202 12.979 16.511 18.622 23.690 30.136 43.240 48.770Eu 3d3 1155.0 29.91 63 6.382 8.256 10.680 12.147 15.714 20.328 29.910 34.019F 2p 9.0 0.0478 9 0.061 0.059 0.056 0.055 0.053 0.051 0.048 0.047F 2s 29.2 0.21 9 0.265 0.255 0.245 0.240 0.231 0.223 0.210 0.206F 1s 685.7 4.43 9 2.723 2.953 3.202 3.335 3.617 3.922 4.430 4.613F loss 703.5 0 9 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000F loss 711.6 0 9 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000F Auger 833.0 0 9 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000F Auger 859.0 0 9 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000F Auger 878.1 0 9 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Fe 3d 1.0 0.1711 26 0.221 0.212 0.203 0.198 0.190 0.182 0.171 0.168Fe 3p 52.6 1.669 26 2.063 1.992 1.923 1.889 1.823 1.760 1.669 1.640Fe 3s 91.0 0.745 26 0.892 0.865 0.840 0.827 0.803 0.779 0.745 0.734Fe 2p3 706.7 10.82 26 6.441 7.023 7.657 7.995 8.717 9.504 10.820 11.298Fe 2p1 719.9 5.6 26 3.266 3.573 3.909 4.089 4.473 4.894 5.600 5.857Fe Auger 784.0 0 26 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Fe Auger 846.0 4.57 26 2.149 2.437 2.763 2.943 3.337 3.784 4.570 4.867Fe Auger 888.0 0 26 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Fr 6p 15.0 0.3366 87 0.429 0.412 0.396 0.388 0.372 0.358 0.337 0.330Fr 6s 34.0 0.1257 87 0.158 0.152 0.146 0.144 0.138 0.133 0.126 0.123Fr 5d 58.0 4.28 87 5.268 5.088 4.915 4.831 4.667 4.508 4.280 4.207Fr 5p3 140.0 1.77 87 2.029 1.984 1.939 1.917 1.874 1.832 1.770 1.750Fr 5p1 182.0 0.618 87 0.682 0.671 0.660 0.655 0.644 0.633 0.618 0.613Fr 5s 234.0 0.645 87 0.678 0.672 0.667 0.664 0.659 0.653 0.645 0.642Fr 4f 268.0 34.36 87 34.944 34.846 34.748 34.700 34.602 34.505 34.360 34.312Fr 4d5 577.0 15.11 87 10.819 11.438 12.093 12.435 13.147 13.899 15.110 15.537Fr 4d3 603.0 10.16 87 7.026 7.471 7.945 8.193 8.713 9.265 10.160 10.477Fr 4p3 810.0 7.07 87 3.549 3.981 4.466 4.730 5.305 5.951 7.070 7.488Fr 4p1 980.0 1.97 87 0.699 0.831 0.987 1.076 1.279 1.520 1.970 2.148

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Page 627: Vol 1 - XPS of Elements & Native Oxides - 1999

Relative Sensitivity Factors (RSFs) Used for the SSI Instrument versus Pass Energy Settings

XPS BE Scofield Atom PE=150 V PE=150 PE=100 PE=100 V PE=50 V PE=50 V PE=25 V PE=25 VElement Signal (eV) RSFs # Exp=1.2 Exp=1.0 Exp=0.8 Exp=0.7 Exp=0.5 Exp=0.3 Exp=0 Exp= -0.1

Fr 4s 1153.0 1.95 87 0.419 0.541 0.700 0.795 1.028 1.328 1.950 2.217Ga 4p 1.0 0.018 31 0.023 0.022 0.021 0.021 0.020 0.019 0.018 0.018Ga 3d 18.6 0.358 31 0.455 0.437 0.420 0.412 0.396 0.380 0.358 0.351Ga loss 32.1 0 31 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Ga 3p 103.0 3.21 31 3.802 3.696 3.593 3.543 3.445 3.349 3.210 3.165Ga 3p3 103.0 2.11 31 2.499 2.430 2.362 2.329 2.264 2.201 2.110 2.080Ga 3p1 107.0 1.1 31 1.298 1.263 1.229 1.212 1.179 1.147 1.100 1.085Ga loss 119.4 0 31 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Ga loss 132.7 0 31 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Ga 3s 158.9 1.13 31 1.274 1.249 1.224 1.212 1.188 1.164 1.130 1.119Ga loss 173.3 0 31 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Ga Auger 363.6 0 31 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Ga Auger 391.7 0 31 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Ga Auger 447.3 0 31 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Ga Auger 486.4 0 31 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Ga Auger 503.8 0 31 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Ga Auger 513.5 0 31 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Ga Auger 532.5 0 31 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Ga Auger 570.9 0 31 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Ga Auger 588.9 0 31 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Ga Auger 629.4 0 31 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Ga Auger 640.5 0 31 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Ga Auger 655.7 0 31 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Ga Auger 707.5 0 31 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Ga 2p3 1116.6 21.4 31 5.208 6.591 8.341 9.384 11.876 15.030 21.400 24.075Ga 2p1 1143.4 11.09 31 2.466 3.168 4.070 4.614 5.927 7.615 11.090 12.570Gd 4f 7.7 1.434 64 1.840 1.765 1.693 1.658 1.591 1.526 1.434 1.405Gd 5p 20.5 0.847 64 1.075 1.033 0.993 0.974 0.936 0.899 0.847 0.830Gd 5s 36.0 0.288 64 0.361 0.348 0.335 0.329 0.316 0.305 0.288 0.283

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Page 628: Vol 1 - XPS of Elements & Native Oxides - 1999

Relative Sensitivity Factors (RSFs) Used for the SSI Instrument versus Pass Energy Settings

XPS BE Scofield Atom PE=150 V PE=150 PE=100 PE=100 V PE=50 V PE=50 V PE=25 V PE=25 VElement Signal (eV) RSFs # Exp=1.2 Exp=1.0 Exp=0.8 Exp=0.7 Exp=0.5 Exp=0.3 Exp=0 Exp= -0.1

Gd 4d 141.1 10.4 64 11.912 11.645 11.385 11.257 11.005 10.759 10.400 10.283Gd 4p3 271.3 3.88 64 3.933 3.924 3.915 3.911 3.902 3.893 3.880 3.876Gd 4p1 290.6 1.8 64 1.790 1.792 1.793 1.794 1.796 1.797 1.800 1.801Gd 4s 376.0 1.51 64 1.374 1.396 1.418 1.429 1.452 1.475 1.510 1.522Gd Auger 460.2 0 64 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Gd Auger 600.0 0 64 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Gd Auger 763.4 0 64 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Gd Auger 841.1 0 64 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Gd 3d5 1186.9 46.23 64 8.737 11.533 15.225 17.492 23.091 30.481 46.230 53.115Gd 3d3 1219.6 31.98 64 5.262 7.108 9.602 11.161 15.077 20.368 31.980 37.170Gd 3p3 1378.9 0 64 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Ge 4p 3.0 0.058 32 0.075 0.072 0.069 0.067 0.064 0.062 0.058 0.057Ge 3d5 29.1 0.852 32 1.074 1.033 0.994 0.975 0.938 0.903 0.852 0.836Ge 3d 29.4 1.42 32 1.790 1.722 1.657 1.625 1.564 1.505 1.420 1.393Ge 3d3 29.7 0.568 32 0.716 0.689 0.663 0.650 0.625 0.602 0.568 0.557Ge loss 45.7 0 32 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Ge 3p3 122.0 2.39 32 2.784 2.714 2.646 2.613 2.547 2.483 2.390 2.360Ge 3p1 129.0 1.24 32 1.436 1.401 1.367 1.351 1.318 1.286 1.240 1.225Ge loss 138.5 0 32 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Ge 3s 181.0 1.23 32 1.359 1.336 1.314 1.304 1.282 1.261 1.230 1.220Ge Auger 197.5 0 32 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Ge Auger 310.4 0 32 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Ge Auger 326.8 0 32 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Ge Auger 341.4 0 32 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Ge Auger 357.9 0 32 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Ge Auger 412.3 0 32 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Ge Auger 433.0 0 32 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Ge Auger 443.6 0 32 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Ge Auger 524.8 0 32 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000

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Relative Sensitivity Factors (RSFs) Used for the SSI Instrument versus Pass Energy Settings

XPS BE Scofield Atom PE=150 V PE=150 PE=100 PE=100 V PE=50 V PE=50 V PE=25 V PE=25 VElement Signal (eV) RSFs # Exp=1.2 Exp=1.0 Exp=0.8 Exp=0.7 Exp=0.5 Exp=0.3 Exp=0 Exp= -0.1

Ge Auger 579.8 0 32 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Ge 2p3 1217.0 24.15 32 4.020 5.420 7.308 8.485 11.441 15.426 24.150 28.042Ge loss 1234.8 0 32 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Ge 2p1 1249.0 12.52 32 1.791 2.476 3.424 4.027 5.568 7.700 12.520 14.722Ge loss 1265.8 0 32 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000H 1s 14.0 0.0002 1 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000He 1s 26.0 0.0082 2 0.010 0.010 0.010 0.009 0.009 0.009 0.008 0.008Hf 5d 1.0 0.1526 72 0.197 0.189 0.181 0.177 0.170 0.163 0.153 0.149Hf 4f7 14.2 4.2 72 5.360 5.147 4.942 4.842 4.649 4.464 4.200 4.116Hf 4f 15.0 7.52 72 9.591 9.210 8.844 8.666 8.322 7.991 7.520 7.369Hf 4f5 15.9 3.32 72 4.231 4.064 3.903 3.825 3.673 3.528 3.320 3.254Hf 5p3 31.0 0.699 72 0.880 0.847 0.815 0.799 0.769 0.740 0.699 0.686Hf 5p1 37.5 0.325 72 0.407 0.392 0.378 0.371 0.357 0.344 0.325 0.319Hf 5s 62.3 0.344 72 0.422 0.408 0.394 0.387 0.375 0.362 0.344 0.338Hf 4d5 210.8 8.84 72 9.499 9.386 9.274 9.219 9.109 9.000 8.840 8.787Hf 4d3 221.3 6.13 72 6.522 6.455 6.389 6.356 6.290 6.226 6.130 6.098Hf 4p3 379.5 4.88 72 4.423 4.496 4.571 4.608 4.684 4.762 4.880 4.920Hf 4p1 437.3 2.06 72 1.751 1.799 1.848 1.874 1.925 1.978 2.060 2.088Hf 4s 533.8 1.76 72 1.332 1.396 1.462 1.496 1.567 1.642 1.760 1.801Hf Auger 1307.0 0 72 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Hg 5d 6.2 2.079 80 2.670 2.561 2.457 2.406 2.308 2.213 2.079 2.036Hg 5p3 58.0 1.17 80 1.440 1.391 1.344 1.321 1.276 1.232 1.170 1.150Hg 5p1 81.0 0.484 80 0.584 0.566 0.549 0.540 0.523 0.507 0.484 0.476Hg 4f 98.8 18.89 80 22.455 21.817 21.197 20.894 20.301 19.724 18.890 18.620Hg 4f7 99.9 10.57 80 12.553 12.198 11.854 11.685 11.355 11.034 10.570 10.420Hg 4f5 103.9 8.32 80 9.846 9.574 9.309 9.179 8.925 8.678 8.320 8.204Hg 5s 120.0 0.5 80 0.583 0.569 0.554 0.547 0.533 0.520 0.500 0.494Hg 4d5 358.3 12.17 80 11.285 11.428 11.572 11.645 11.793 11.942 12.170 12.247Hg 4d3 377.8 8.33 80 7.564 7.687 7.811 7.874 8.002 8.132 8.330 8.397

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Relative Sensitivity Factors (RSFs) Used for the SSI Instrument versus Pass Energy Settings

XPS BE Scofield Atom PE=150 V PE=150 PE=100 PE=100 V PE=50 V PE=50 V PE=25 V PE=25 VElement Signal (eV) RSFs # Exp=1.2 Exp=1.0 Exp=0.8 Exp=0.7 Exp=0.5 Exp=0.3 Exp=0 Exp= -0.1

Hg 4p3 577.2 6.04 80 4.324 4.571 4.833 4.970 5.255 5.556 6.040 6.211Hg 4p1 680.2 2.14 80 1.326 1.436 1.555 1.619 1.753 1.899 2.140 2.227Hg 4s 803.6 1.94 80 0.985 1.103 1.235 1.306 1.463 1.638 1.940 2.053Ho 4f 8.3 3.1 67 3.975 3.814 3.659 3.584 3.438 3.299 3.100 3.036Ho 5p3 23.3 0 67 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Ho 5p1 29.5 0 67 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Ho 5s 49.5 0.293 67 0.363 0.350 0.338 0.332 0.320 0.309 0.293 0.288Ho Auger 130.0 0 67 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Ho 4d 161.4 12 67 13.496 13.234 12.978 12.851 12.602 12.358 12.000 11.883Ho 4p3 315.2 4.24 67 4.112 4.133 4.155 4.165 4.186 4.208 4.240 4.251Ho 4p1 343.0 1.91 67 1.800 1.818 1.836 1.845 1.863 1.882 1.910 1.919Ho 4s 436.0 1.61 67 1.370 1.408 1.446 1.466 1.505 1.546 1.610 1.632Ho Auger 488.8 0 67 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Ho Auger 626.1 0 67 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Ho Auger 665.3 0 67 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Ho Auger 748.0 0 67 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Ho 3d5 1352.9 0 67 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Ho 3d3 1393.3 0 67 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000I 5p 3.0 0.2828 53 0.364 0.349 0.335 0.328 0.314 0.301 0.283 0.277I 5s 15.9 0.1421 53 0.181 0.174 0.167 0.164 0.157 0.151 0.142 0.139I 4d 48.5 4.13 53 5.124 4.943 4.768 4.683 4.518 4.359 4.130 4.056I 4p 121.1 3.34 53 3.894 3.796 3.700 3.653 3.560 3.471 3.340 3.298I 4s 185.5 0.959 53 1.055 1.038 1.022 1.014 0.998 0.982 0.959 0.951I 3d 619.0 33.64 53 22.759 24.290 25.925 26.783 28.585 30.509 33.640 34.754I 3d5 619.1 19.87 53 13.441 14.346 15.311 15.818 16.883 18.020 19.870 20.528I 3d3 630.6 13.77 53 9.167 9.810 10.498 10.860 11.622 12.438 13.770 14.245I loss 643.5 0 53 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000I loss 657.2 0 53 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000I 3p3 875.0 10.62 53 4.723 5.406 6.188 6.620 7.577 8.673 10.620 11.362

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Relative Sensitivity Factors (RSFs) Used for the SSI Instrument versus Pass Energy Settings

XPS BE Scofield Atom PE=150 V PE=150 PE=100 PE=100 V PE=50 V PE=50 V PE=25 V PE=25 VElement Signal (eV) RSFs # Exp=1.2 Exp=1.0 Exp=0.8 Exp=0.7 Exp=0.5 Exp=0.3 Exp=0 Exp= -0.1

I 3p1 930.9 5.06 53 2.006 2.340 2.731 2.949 3.441 4.015 5.060 5.466I Auger 970.4 0 53 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000I Auger 981.8 0 53 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000I 3s 1072.0 3.53 53 0.985 1.218 1.507 1.676 2.074 2.565 3.530 3.926In 5p 1.0 0.0195 49 0.025 0.024 0.023 0.023 0.022 0.021 0.020 0.019In 4d 16.9 2.28 49 2.903 2.789 2.679 2.625 2.522 2.422 2.280 2.235In loss 28.6 0 49 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000In loss 40.0 0 49 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000In 4p 78.3 2.45 49 2.964 2.871 2.782 2.738 2.652 2.569 2.450 2.411In 4s 122.4 0.742 49 0.864 0.842 0.821 0.811 0.791 0.771 0.742 0.733In 3d5 443.8 13.32 49 11.237 11.560 11.892 12.062 12.409 12.765 13.320 13.510In 3d 448.0 22.54 49 18.923 19.483 20.059 20.354 20.956 21.576 22.540 22.871In 3d3 451.4 9.22 49 7.710 7.944 8.184 8.307 8.558 8.817 9.220 9.358In loss 463.1 0 49 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000In loss 474.7 0 49 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000In 3p3 665.2 8.93 49 5.658 6.105 6.587 6.843 7.383 7.967 8.930 9.276In loss 676.7 0 49 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000In 3p1 703.1 4.4 49 2.634 2.869 3.125 3.262 3.553 3.870 4.400 4.592In loss 714.1 0 49 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000In 3s 826.0 3.16 49 1.541 1.737 1.958 2.079 2.343 2.641 3.160 3.355In Auger 1076.4 0 49 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000In Auger 1084.0 0 49 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000In Auger 1151.0 0 49 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Ir 5d 4.0 1.238 77 1.593 1.527 1.465 1.434 1.375 1.319 1.238 1.212Ir 5p3 51.0 0.967 77 1.197 1.155 1.115 1.095 1.057 1.020 0.967 0.950Ir 4f7 60.8 7.78 77 9.553 9.232 8.921 8.770 8.475 8.190 7.780 7.648Ir 4f 62.0 13.9 77 17.050 16.479 15.928 15.659 15.135 14.628 13.900 13.665Ir 5p1 62.0 0.422 77 0.518 0.500 0.484 0.475 0.459 0.444 0.422 0.415Ir 4f5 63.8 6.12 77 7.496 7.247 7.006 6.888 6.660 6.438 6.120 6.017

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Relative Sensitivity Factors (RSFs) Used for the SSI Instrument versus Pass Energy Settings

XPS BE Scofield Atom PE=150 V PE=150 PE=100 PE=100 V PE=50 V PE=50 V PE=25 V PE=25 VElement Signal (eV) RSFs # Exp=1.2 Exp=1.0 Exp=0.8 Exp=0.7 Exp=0.5 Exp=0.3 Exp=0 Exp= -0.1

Ir 5s 95.2 0.438 77 0.522 0.507 0.493 0.485 0.471 0.458 0.438 0.432Ir 4d5 296.2 10.9 77 10.778 10.798 10.819 10.829 10.849 10.869 10.900 10.910Ir 4d3 311.9 7.51 77 7.309 7.342 7.375 7.392 7.425 7.459 7.510 7.527Ir 4p3 494.8 5.59 77 4.440 4.614 4.795 4.887 5.079 5.277 5.590 5.698Ir 4p1 578.2 2.14 77 1.530 1.618 1.711 1.759 1.861 1.968 2.140 2.201Ir 4s 690.9 1.88 77 1.146 1.245 1.352 1.409 1.530 1.661 1.880 1.959K 3p 16.0 0.3619 19 0.461 0.443 0.425 0.417 0.400 0.385 0.362 0.355K 3s 34.0 0.286 19 0.359 0.346 0.333 0.327 0.314 0.303 0.286 0.281K 2p3 293.3 2.62 19 2.598 2.602 2.606 2.607 2.611 2.615 2.620 2.622K 2p 295.0 3.97 19 3.930 3.937 3.944 3.947 3.953 3.960 3.970 3.973K 2p1 296.1 1.35 19 1.335 1.338 1.340 1.341 1.344 1.346 1.350 1.351K loss 305.5 0 19 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000K loss 321.2 0 19 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000K 2s 377.2 2.27 19 2.063 2.096 2.130 2.147 2.181 2.216 2.270 2.288K loss 389.8 0 19 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000K Auger 1235.0 0 19 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Kr 4p 11.0 0.476 36 0.609 0.585 0.561 0.550 0.527 0.506 0.476 0.466Kr 4s 24.0 0.213 36 0.270 0.259 0.249 0.244 0.235 0.226 0.213 0.209Kr 3d5 86.9 2.09 36 2.510 2.434 2.361 2.326 2.256 2.188 2.090 2.058Kr 3d 87.2 3.48 36 4.178 4.053 3.931 3.872 3.755 3.643 3.480 3.427Kr 3d3 88.2 1.39 36 1.667 1.618 1.569 1.546 1.500 1.455 1.390 1.369Kr 3p3 208.0 3.65 36 3.932 3.884 3.836 3.812 3.765 3.719 3.650 3.627Kr 3p1 233.0 1.89 36 1.989 1.972 1.955 1.947 1.930 1.914 1.890 1.882Kr 3s 289.0 1.64 36 1.633 1.635 1.636 1.636 1.637 1.638 1.640 1.641La 5p 17.0 0.688 57 0.876 0.841 0.808 0.792 0.761 0.731 0.688 0.674La 5s 33.0 0.234 57 0.294 0.283 0.272 0.267 0.257 0.248 0.234 0.230La 4d 104.0 6.52 57 7.716 7.502 7.294 7.193 6.994 6.800 6.520 6.429La 4p3 197.0 2.91 57 3.168 3.123 3.079 3.058 3.015 2.972 2.910 2.890La 4p1 213.0 1.42 57 1.523 1.505 1.488 1.479 1.462 1.445 1.420 1.412

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Page 633: Vol 1 - XPS of Elements & Native Oxides - 1999

Relative Sensitivity Factors (RSFs) Used for the SSI Instrument versus Pass Energy Settings

XPS BE Scofield Atom PE=150 V PE=150 PE=100 PE=100 V PE=50 V PE=50 V PE=25 V PE=25 VElement Signal (eV) RSFs # Exp=1.2 Exp=1.0 Exp=0.8 Exp=0.7 Exp=0.5 Exp=0.3 Exp=0 Exp= -0.1

La 4s 275.0 1.19 57 1.202 1.200 1.198 1.197 1.195 1.193 1.190 1.189La 3d5 836.0 28.12 57 13.468 15.226 17.214 18.303 20.692 23.393 28.120 29.899La 3d3 853.0 19.5 57 9.048 10.283 11.687 12.459 14.160 16.094 19.500 20.789La 3p3 1128.0 12.11 57 2.838 3.615 4.604 5.195 6.616 8.426 12.110 13.666La 3p1 1205.0 5.55 57 0.973 1.301 1.739 2.010 2.687 3.592 5.550 6.416Li 1s 54.9 0.0568 3 0.070 0.068 0.065 0.064 0.062 0.060 0.057 0.056Lu 4f 7.0 6.5 71 8.344 8.004 7.677 7.519 7.213 6.919 6.500 6.366Lu 5d 8.3 0.0593 71 0.076 0.073 0.070 0.069 0.066 0.063 0.059 0.058Lu 5p 26.1 0.62 71 0.784 0.754 0.725 0.711 0.684 0.657 0.620 0.608Lu 5p 29.0 0.949 71 1.197 1.151 1.108 1.086 1.045 1.006 0.949 0.931Lu 5p 33.4 0.31 71 0.389 0.375 0.361 0.354 0.341 0.328 0.310 0.304Lu 5s 56.8 0.326 71 0.402 0.388 0.375 0.368 0.356 0.343 0.326 0.320Lu 4d5 196.0 8.45 71 9.206 9.076 8.947 8.883 8.757 8.633 8.450 8.390Lu 4d3 205.8 5.87 71 6.337 6.257 6.178 6.138 6.060 5.983 5.870 5.833Lu 4p3 359.2 4.74 71 4.391 4.447 4.504 4.533 4.591 4.650 4.740 4.770Lu 4p1 412.7 2.03 71 1.774 1.814 1.856 1.876 1.919 1.963 2.030 2.053Lu 4s 507.9 1.73 71 1.352 1.409 1.468 1.499 1.561 1.627 1.730 1.766Lu Auger 1321.6 0 71 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Mg 3s 2.0 0.0285 12 0.037 0.035 0.034 0.033 0.032 0.030 0.029 0.028Mg 2p 49.7 0.3335 12 0.413 0.399 0.385 0.378 0.365 0.352 0.334 0.328Mg loss 61.0 0 12 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Mg loss 71.8 0 12 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Mg 2s 89.1 0.575 12 0.689 0.669 0.649 0.639 0.620 0.602 0.575 0.566Mg loss 99.8 0 12 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Mg loss 110.6 0 12 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Mg Auger 235.3 0 12 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Mg Auger 301.6 4.1 12 4.032 4.043 4.055 4.060 4.072 4.083 4.100 4.106Mg Auger 312.5 0 12 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Mg Auger 323.6 0 12 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000

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Relative Sensitivity Factors (RSFs) Used for the SSI Instrument versus Pass Energy Settings

XPS BE Scofield Atom PE=150 V PE=150 PE=100 PE=100 V PE=50 V PE=50 V PE=25 V PE=25 VElement Signal (eV) RSFs # Exp=1.2 Exp=1.0 Exp=0.8 Exp=0.7 Exp=0.5 Exp=0.3 Exp=0 Exp= -0.1

Mg Auger 333.1 0 12 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Mg Auger 347.2 0 12 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Mg Auger 357.9 0 12 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Mg Auger 368.5 0 12 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Mg Auger 381.0 0 12 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Mg Auger 391.7 0 12 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Mg 1s 1304.4 0 12 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Mg loss 1315.3 0 12 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Mg loss 1326.3 0 12 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Mn 3d 2.8 0.1046 25 0.135 0.129 0.124 0.121 0.116 0.111 0.105 0.102Mn 3p 47.0 1.423 25 1.768 1.705 1.644 1.615 1.558 1.502 1.423 1.398Mn 3s 82.0 0.674 25 0.813 0.788 0.764 0.752 0.729 0.706 0.674 0.664Mn 2p3 638.7 9.17 25 6.035 6.471 6.938 7.185 7.703 8.260 9.170 9.495Mn 2p 645.0 13.91 25 9.073 9.743 10.462 10.841 11.641 12.501 13.910 14.414Mn 2p1 649.7 4.74 25 3.071 3.301 3.549 3.680 3.956 4.253 4.740 4.915Mn 2s 768.6 4.23 25 2.280 2.528 2.802 2.950 3.270 3.625 4.230 4.454Mn Auger 851.6 0 25 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Mn Auger 900.3 0 25 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Mn Auger 944.1 0 25 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Mo 4d 2.0 0.316 42 0.407 0.390 0.374 0.366 0.351 0.337 0.316 0.309Mo 4p 35.2 1.31 42 1.643 1.582 1.524 1.495 1.440 1.386 1.310 1.285Mo 4s 62.0 0.44 42 0.540 0.522 0.504 0.496 0.479 0.463 0.440 0.433Mo 3d5 228.0 5.62 42 5.942 5.887 5.832 5.805 5.752 5.699 5.620 5.594Mo 3d 229.5 9.5 42 10.029 9.939 9.849 9.805 9.717 9.630 9.500 9.457Mo 3d3 231.1 3.88 42 4.090 4.054 4.019 4.001 3.966 3.931 3.880 3.863Mo loss 238.9 0 42 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Mo loss 253.0 0 42 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Mo 3p3 393.8 5.94 42 5.301 5.402 5.506 5.558 5.665 5.773 5.940 5.997Mo 3p1 411.3 3.04 42 2.661 2.720 2.782 2.813 2.876 2.940 3.040 3.074

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Relative Sensitivity Factors (RSFs) Used for the SSI Instrument versus Pass Energy Settings

XPS BE Scofield Atom PE=150 V PE=150 PE=100 PE=100 V PE=50 V PE=50 V PE=25 V PE=25 VElement Signal (eV) RSFs # Exp=1.2 Exp=1.0 Exp=0.8 Exp=0.7 Exp=0.5 Exp=0.3 Exp=0 Exp= -0.1

Mo loss 421.6 0 42 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Mo 3s 505.0 2.34 42 1.836 1.912 1.990 2.031 2.115 2.202 2.340 2.388Mo Auger 1264.2 0 42 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Mo Auger 1298.6 0 42 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Mo Auger 1324.5 0 42 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Mo Auger 1365.5 0 42 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000N 2s 19.5 0.0065 7 0.008 0.008 0.008 0.007 0.007 0.007 0.007 0.006N 1s 398.5 1.8 7 1.598 1.630 1.663 1.679 1.713 1.747 1.800 1.818N loss 424.5 0 7 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000N Auger 1107.0 0 7 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Na 3s 1.0 0.0064 11 0.008 0.008 0.008 0.007 0.007 0.007 0.006 0.006Na 2p 30.3 0.1941 11 0.244 0.235 0.226 0.222 0.214 0.206 0.194 0.190Na 2s 63.3 0.422 11 0.517 0.500 0.483 0.475 0.459 0.444 0.422 0.415Na Auger 454.3 3.4 11 2.834 2.921 3.011 3.057 3.151 3.249 3.400 3.452Na Auger 497.4 0 11 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Na Auger 513.2 0 11 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Na Auger 524.0 0 11 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Na Auger 536.4 0 11 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Na Auger 552.4 0 11 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Na Auger 565.0 0 11 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Na 1s 1072.0 8.52 11 2.377 2.940 3.637 4.046 5.005 6.192 8.520 9.476Nb 4d 2.0 0.198 41 0.255 0.245 0.234 0.230 0.220 0.211 0.198 0.194Nb 4p 30.9 1.17 41 1.473 1.417 1.364 1.338 1.288 1.239 1.170 1.148Nb 4s 55.6 0.402 41 0.496 0.479 0.462 0.454 0.439 0.424 0.402 0.395Nb 3d 201.4 8.21 41 8.900 8.781 8.664 8.606 8.491 8.377 8.210 8.155Nb 3d5 202.3 4.86 41 5.264 5.195 5.126 5.092 5.025 4.958 4.860 4.828Nb 3d3 205.0 3.35 41 3.619 3.573 3.527 3.505 3.460 3.415 3.350 3.328Nb 3p3 360.8 5.53 41 5.114 5.181 5.249 5.283 5.353 5.423 5.530 5.566Nb 3p1 376.2 2.84 41 2.583 2.624 2.666 2.687 2.730 2.774 2.840 2.863

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Relative Sensitivity Factors (RSFs) Used for the SSI Instrument versus Pass Energy Settings

XPS BE Scofield Atom PE=150 V PE=150 PE=100 PE=100 V PE=50 V PE=50 V PE=25 V PE=25 VElement Signal (eV) RSFs # Exp=1.2 Exp=1.0 Exp=0.8 Exp=0.7 Exp=0.5 Exp=0.3 Exp=0 Exp= -0.1

Nb 3s 466.8 2.22 41 1.823 1.884 1.947 1.979 2.045 2.113 2.220 2.257Nb Auger 1319.0 0 41 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Nd 4f 2.0 0.4068 60 0.524 0.503 0.482 0.472 0.452 0.433 0.407 0.398Nd 5p 19.0 0.708 60 0.900 0.865 0.831 0.814 0.782 0.752 0.708 0.694Nd 5s 39.0 0.247 60 0.309 0.298 0.287 0.281 0.271 0.261 0.247 0.242Nd 4d 121.0 8.03 60 9.362 9.126 8.895 8.782 8.560 8.344 8.030 7.928Nd 4p3 228.0 3.31 60 3.499 3.467 3.435 3.419 3.388 3.356 3.310 3.295Nd 4p1 245.0 1.59 60 1.654 1.643 1.632 1.627 1.616 1.606 1.590 1.585Nd 4s 320.0 1.33 60 1.284 1.291 1.299 1.303 1.310 1.318 1.330 1.334Nd Auger 758.0 0 60 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Nd 3d5 981.0 35.29 60 12.490 14.851 17.657 19.254 22.893 27.220 35.290 38.481Nd 3d3 1003.0 24.27 60 8.143 9.769 11.719 12.836 15.398 18.472 24.270 26.582Ne 2p 14.0 0.103 10 0.131 0.126 0.121 0.119 0.114 0.109 0.103 0.101Ne 2s 41.0 0.296 10 0.370 0.356 0.343 0.337 0.325 0.313 0.296 0.291Ne Auger 702.0 0 10 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Ne 1s 863.0 6.3 10 2.868 3.270 3.728 3.981 4.539 5.175 6.300 6.727Ni 3d 2.0 0.3979 28 0.513 0.492 0.471 0.461 0.442 0.424 0.398 0.390Ni 3p 66.0 2.217 28 2.710 2.621 2.535 2.493 2.411 2.331 2.217 2.180Ni loss 77.8 0 28 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Ni 3s 110.5 0.892 28 1.050 1.022 0.994 0.981 0.955 0.929 0.892 0.880Ni Auger 623.2 0 28 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Ni Auger 640.4 0 28 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Ni Auger 705.2 0 28 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Ni Auger 712.2 0 28 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Ni Auger 777.7 0 28 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Ni 2p3 852.6 14.61 28 6.784 7.709 8.761 9.339 10.613 12.060 14.610 15.574Ni 2p1 869.9 7.57 28 3.401 3.886 4.440 4.746 5.424 6.197 7.570 8.092Ni 2s 1008.7 5.16 28 1.707 2.052 2.468 2.706 3.254 3.913 5.160 5.658O 2p 7.0 0.0193 8 0.025 0.024 0.023 0.022 0.021 0.021 0.019 0.019

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Relative Sensitivity Factors (RSFs) Used for the SSI Instrument versus Pass Energy Settings

XPS BE Scofield Atom PE=150 V PE=150 PE=100 PE=100 V PE=50 V PE=50 V PE=25 V PE=25 VElement Signal (eV) RSFs # Exp=1.2 Exp=1.0 Exp=0.8 Exp=0.7 Exp=0.5 Exp=0.3 Exp=0 Exp= -0.1

O 2s 23.1 0.1405 8 0.178 0.171 0.165 0.161 0.155 0.149 0.141 0.138O 1s 531.8 2.93 8 2.224 2.328 2.438 2.494 2.612 2.735 2.930 2.998O loss 553.2 0 8 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000O Auger 979.7 0 8 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000O Auger 999.0 0 8 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000O Auger 1013.0 0 8 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Os 5d 1.0 0.847 76 1.093 1.047 1.004 0.983 0.942 0.903 0.847 0.829Os 5p3 44.0 0.928 76 1.156 1.114 1.074 1.055 1.017 0.980 0.928 0.911Os 4f7 50.7 6.96 76 8.619 8.317 8.026 7.884 7.608 7.342 6.960 6.837Os 4f 51.4 12.44 76 15.396 14.858 14.340 14.087 13.595 13.121 12.440 12.221Os 4f5 53.4 5.48 76 6.771 6.536 6.310 6.200 5.985 5.778 5.480 5.384Os 5p1 54.0 0.408 76 0.504 0.486 0.470 0.461 0.445 0.430 0.408 0.401Os 5s 89.0 0.422 76 0.506 0.491 0.476 0.469 0.455 0.442 0.422 0.416Os 4d5 279.0 10.48 76 10.543 10.532 10.522 10.517 10.506 10.496 10.480 10.475Os 4d3 293.0 7.23 76 7.172 7.182 7.191 7.196 7.206 7.216 7.230 7.235Os 4p3 471.0 5.45 76 4.454 4.606 4.764 4.845 5.011 5.182 5.450 5.542Os 4p1 548.0 2.13 76 1.584 1.664 1.748 1.792 1.883 1.978 2.130 2.183Os 4s 658.0 1.86 76 1.191 1.283 1.382 1.434 1.545 1.664 1.860 1.930P 3p 10.0 0.0368 15 0.047 0.045 0.043 0.043 0.041 0.039 0.037 0.036P 3s 16.0 0.1116 15 0.142 0.137 0.131 0.129 0.123 0.119 0.112 0.109P 2p3 130.1 0.779 15 0.901 0.879 0.858 0.848 0.828 0.808 0.779 0.770P 2p1 131.4 0.413 15 0.477 0.466 0.455 0.449 0.439 0.428 0.413 0.408P 2p 135.0 1.192 15 1.373 1.341 1.310 1.294 1.264 1.235 1.192 1.178P loss 149.9 0 15 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000P loss 168.6 0 15 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000P 2s 189.0 1.18 15 1.294 1.274 1.255 1.245 1.226 1.208 1.180 1.171P loss 207.3 0 15 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000

Pb 6p 1.0 0.0439 82 0.057 0.054 0.052 0.051 0.049 0.047 0.044 0.043Pb 6s 3.0 0.0742 82 0.096 0.092 0.088 0.086 0.082 0.079 0.074 0.073

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Relative Sensitivity Factors (RSFs) Used for the SSI Instrument versus Pass Energy Settings

Element Signal (eV) RSFs # Exp=1.2 Exp=1.0 Exp=0.8 Exp=0.7 Exp=0.5 Exp=0.3 Exp=0 Exp= -0.1Pb 5d 17.7 2.69 82 3.423 3.288 3.159 3.096 2.974 2.857 2.690 2.637Pb 5d5 19.0 1.58 82 2.008 1.930 1.854 1.817 1.746 1.678 1.580 1.549Pb 5d3 21.0 1.11 82 1.409 1.354 1.301 1.276 1.226 1.178 1.110 1.088Pb loss 30.9 0 82 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Pb 5p3 82.7 1.33 82 1.603 1.554 1.506 1.483 1.438 1.394 1.330 1.309Pb 5p1 106.3 0.526 82 0.621 0.604 0.588 0.580 0.564 0.548 0.526 0.519Pb 4f7 136.9 12.73 82 14.636 14.299 13.971 13.809 13.492 13.182 12.730 12.583Pb 4f 138.3 22.74 82 26.111 25.516 24.935 24.649 24.088 23.540 22.740 22.480Pb 4f5 141.7 10.01 82 11.459 11.203 10.954 10.831 10.590 10.354 10.010 9.898Pb 5s 148.0 0.542 82 0.617 0.604 0.591 0.585 0.572 0.560 0.542 0.536Pb loss 149.8 0 82 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Pb 4d5 412.0 13.02 82 11.387 11.644 11.907 12.041 12.313 12.591 13.020 13.166Pb loss 425.5 0 82 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Pb 4d3 434.3 8.87 82 7.565 7.768 7.977 8.083 8.301 8.524 8.870 8.988Pb loss 446.9 0 82 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Pb 4p3 643.6 6.33 82 4.137 4.441 4.767 4.939 5.302 5.692 6.330 6.558Pb 4p1 761.1 2.12 82 1.157 1.280 1.416 1.489 1.647 1.822 2.120 2.230Pb 4s 891.7 1.96 82 0.843 0.970 1.117 1.198 1.379 1.587 1.960 2.103Pb Auger 1390.9 0 82 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Pd 4d 1.4 1.24 46 1.599 1.533 1.469 1.438 1.379 1.321 1.240 1.214Pd 4p 50.7 1.88 46 2.328 2.247 2.168 2.130 2.055 1.983 1.880 1.847Pd 4s 88.2 0.598 46 0.717 0.696 0.675 0.665 0.645 0.626 0.598 0.589Pd 3d5 335.0 9.48 46 9.008 9.085 9.163 9.202 9.281 9.360 9.480 9.520Pd 3d 337.5 16.04 46 15.203 15.339 15.477 15.546 15.686 15.826 16.040 16.112Pd 3d3 340.3 6.56 46 6.199 6.258 6.317 6.347 6.407 6.468 6.560 6.591Pd loss 346.5 0 46 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Pd 3p3 532.3 7.63 46 5.787 6.060 6.346 6.493 6.800 7.120 7.630 7.808Pd 3p1 560.0 3.83 46 2.804 2.954 3.111 3.193 3.363 3.543 3.830 3.931Pd 3s 671.5 2.81 46 1.764 1.906 2.060 2.142 2.314 2.501 2.810 2.921

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Relative Sensitivity Factors (RSFs) Used for the SSI Instrument versus Pass Energy Settings

XPS BE Scofield Atom PE=150 V PE=150 PE=100 PE=100 V PE=50 V PE=50 V PE=25 V PE=25 VElement Signal (eV) RSFs # Exp=1.2 Exp=1.0 Exp=0.8 Exp=0.7 Exp=0.5 Exp=0.3 Exp=0 Exp= -0.1

Pd Auger 1159.4 0 46 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Pd Auger 1213.0 0 46 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Pd Auger 1243.8 0 46 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Pm 4f 4.0 0.604 61 0.777 0.745 0.715 0.700 0.671 0.643 0.604 0.591Pm 5p 22.0 0.73 61 0.926 0.890 0.855 0.838 0.806 0.775 0.730 0.716Pm 5s 38.0 0.254 61 0.318 0.306 0.295 0.290 0.279 0.269 0.254 0.249Pm 4d 121.0 8.59 61 10.015 9.762 9.516 9.395 9.157 8.926 8.590 8.481Pm 4p3 237.0 3.45 61 3.616 3.588 3.560 3.546 3.518 3.491 3.450 3.437Pm 4p1 255.0 1.64 61 1.689 1.681 1.673 1.669 1.660 1.652 1.640 1.636Pm 4s 331.0 1.38 61 1.317 1.327 1.338 1.343 1.353 1.364 1.380 1.385Pm 3d5 1027.0 37.65 61 11.884 14.403 17.455 19.215 23.286 28.221 37.650 41.447Pm 3d3 1052.0 26.08 61 7.698 9.434 11.562 12.799 15.686 19.223 26.080 28.871Po 6p 5.0 0.1356 84 0.174 0.167 0.160 0.157 0.151 0.144 0.136 0.133Po 6s 12.0 0.0937 84 0.120 0.115 0.110 0.108 0.104 0.100 0.094 0.092Po 5d 31.0 3.31 84 4.166 4.010 3.859 3.785 3.643 3.506 3.310 3.247Po 5p3 104.0 1.5 84 1.775 1.726 1.678 1.655 1.609 1.564 1.500 1.479Po 5p1 132.0 0.566 84 0.654 0.638 0.623 0.616 0.601 0.587 0.566 0.559Po 5s 177.0 0.584 84 0.648 0.636 0.626 0.620 0.610 0.599 0.584 0.579Po 4f 184.0 27.04 84 29.790 29.313 28.843 28.611 28.153 27.703 27.040 26.823Po 4d5 473.0 13.87 84 11.309 11.700 12.105 12.313 12.739 13.180 13.870 14.108Po 4d3 500.0 9.4 84 7.420 7.718 8.029 8.188 8.518 8.860 9.400 9.587Po 4p3 705.0 6.62 84 3.951 4.306 4.693 4.899 5.339 5.819 6.620 6.911Po 4p1 851.0 2.07 84 0.964 1.095 1.244 1.326 1.506 1.710 2.070 2.206Po 4s 995.0 1.97 84 0.674 0.806 0.964 1.054 1.260 1.507 1.970 2.154Pr 4f 2.0 0.2545 59 0.328 0.314 0.301 0.295 0.283 0.271 0.255 0.249Pr 5p 18.0 0.685 59 0.871 0.837 0.804 0.788 0.757 0.727 0.685 0.671Pr 5s 38.0 0.238 59 0.298 0.287 0.276 0.271 0.261 0.252 0.238 0.234Pr 4d 115.0 7.48 59 8.767 8.538 8.315 8.206 7.992 7.783 7.480 7.382Pr 4p3 218.0 3.17 59 3.383 3.347 3.311 3.293 3.257 3.222 3.170 3.153

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Relative Sensitivity Factors (RSFs) Used for the SSI Instrument versus Pass Energy Settings

XPS BE Scofield Atom PE=150 V PE=150 PE=100 PE=100 V PE=50 V PE=50 V PE=25 V PE=25 VElement Signal (eV) RSFs # Exp=1.2 Exp=1.0 Exp=0.8 Exp=0.7 Exp=0.5 Exp=0.3 Exp=0 Exp= -0.1

Pr 4p1 234.0 1.53 59 1.608 1.595 1.582 1.575 1.562 1.549 1.530 1.524Pr 4s 305.0 1.28 59 1.254 1.259 1.263 1.265 1.269 1.274 1.280 1.282Pr Auger 797.0 0 59 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Pr 3d5 931.8 32.85 59 12.997 15.169 17.704 19.126 22.323 26.053 32.850 35.489Pr 3d3 952.2 22.72 59 8.594 10.106 11.883 12.886 15.152 17.818 22.720 24.637Pr 3p3 1242.0 12.94 59 1.917 2.635 3.622 4.247 5.839 8.028 12.940 15.172Pt 5d 3.9 1.477 78 1.901 1.822 1.747 1.711 1.641 1.573 1.477 1.446Pt 5p3 51.5 1.04 78 1.287 1.242 1.199 1.178 1.137 1.097 1.040 1.022Pt 5p1 66.0 0.444 78 0.543 0.525 0.508 0.499 0.483 0.467 0.444 0.437Pt 4f7 71.0 8.65 78 10.530 10.190 9.862 9.701 9.389 9.086 8.650 8.509Pt 4f 72.6 15.46 78 18.794 18.193 17.610 17.326 16.771 16.234 15.460 15.210Pt 4f5 74.4 6.81 78 8.266 8.004 7.749 7.625 7.383 7.148 6.810 6.701Pt 5s 102.0 0.459 78 0.544 0.529 0.514 0.507 0.493 0.479 0.459 0.453Pt loss 103.0 0 78 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Pt 4d5 314.5 11.32 78 10.987 11.042 11.097 11.125 11.180 11.236 11.320 11.348Pt 4d3 331.2 7.78 78 7.422 7.481 7.540 7.569 7.629 7.689 7.780 7.811Pt 4p3 519.6 5.74 78 4.423 4.619 4.824 4.930 5.149 5.378 5.740 5.866Pt 4p1 609.1 2.14 78 1.468 1.563 1.664 1.717 1.829 1.947 2.140 2.208Pt 4s 724.0 1.9 78 1.101 1.206 1.321 1.382 1.514 1.658 1.900 1.988Pt Auger 1250.8 0 78 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Pt Auger 1316.1 0 78 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Pt Auger 1334.0 0 78 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Ra 6p 19.0 0.3959 88 0.503 0.484 0.465 0.455 0.438 0.420 0.396 0.388Ra 6s 44.0 0.1383 88 0.172 0.166 0.160 0.157 0.152 0.146 0.138 0.136Ra 5d 68.0 4.61 88 5.626 5.442 5.265 5.178 5.009 4.845 4.610 4.534Ra 5p3 153.0 1.86 88 2.108 2.064 2.022 2.001 1.959 1.919 1.860 1.841Ra 5p1 200.0 0.633 88 0.687 0.678 0.669 0.664 0.655 0.646 0.633 0.629Ra 5s 254.0 0.665 88 0.686 0.682 0.679 0.677 0.674 0.670 0.665 0.663Ra 4f 299.0 37.04 88 36.523 36.608 36.694 36.737 36.824 36.910 37.040 37.083

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Relative Sensitivity Factors (RSFs) Used for the SSI Instrument versus Pass Energy Settings

XPS BE Scofield Atom PE=150 V PE=150 PE=100 PE=100 V PE=50 V PE=50 V PE=25 V PE=25 VElement Signal (eV) RSFs # Exp=1.2 Exp=1.0 Exp=0.8 Exp=0.7 Exp=0.5 Exp=0.3 Exp=0 Exp= -0.1

Ra 4d5 603.0 15.53 88 10.739 11.420 12.144 12.524 13.318 14.162 15.530 16.015Ra 4d3 636.0 10.4 88 6.871 7.362 7.889 8.166 8.750 9.376 10.400 10.766Ra 4p3 879.0 7.2 88 3.177 3.641 4.173 4.467 5.120 5.868 7.200 7.708Ra 4p1 1058.0 1.91 88 0.554 0.681 0.837 0.928 1.141 1.402 1.910 2.117Ra 4s 1208.0 1.95 88 0.338 0.452 0.606 0.701 0.939 1.258 1.950 2.257Rb 4p 13.2 0.625 37 0.798 0.766 0.736 0.721 0.692 0.664 0.625 0.612Rb 4p 13.2 0.411 37 0.525 0.504 0.484 0.474 0.455 0.437 0.411 0.403Rb 4p1 15.0 0.214 37 0.273 0.262 0.252 0.247 0.237 0.227 0.214 0.210Rb 4s 28.8 0.251 37 0.317 0.305 0.293 0.287 0.276 0.266 0.251 0.246Rb 3d5 109.7 2.49 37 2.932 2.853 2.777 2.739 2.665 2.594 2.490 2.456Rb 3d 110.0 4.21 37 4.956 4.823 4.694 4.630 4.506 4.385 4.210 4.153Rb 3d3 111.2 1.72 37 2.023 1.969 1.916 1.891 1.840 1.791 1.720 1.697Rb loss 136.8 0 37 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Rb 3p3 237.9 4 37 4.189 4.157 4.125 4.109 4.078 4.046 4.000 3.985Rb 3p1 248.0 2.07 37 2.147 2.134 2.121 2.114 2.102 2.089 2.070 2.064Rb loss 264.3 0 37 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Rb 3s 321.8 1.75 37 1.686 1.696 1.707 1.712 1.723 1.734 1.750 1.755Re 5d 2.8 0.624 75 0.804 0.771 0.739 0.723 0.693 0.665 0.624 0.611Re 5p3 35.0 0.869 75 1.090 1.050 1.011 0.992 0.955 0.920 0.869 0.853Re 4f7 40.2 6.2 75 7.745 7.463 7.191 7.059 6.802 6.555 6.200 6.086Re 4f 41.2 11.08 75 13.829 13.328 12.845 12.609 12.152 11.711 11.080 10.877Re 4f5 42.7 4.88 75 6.084 5.864 5.653 5.550 5.349 5.157 4.880 4.791Re 5p1 46.0 0.387 75 0.481 0.464 0.447 0.439 0.424 0.409 0.387 0.380Re loss 51.7 0 75 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Re loss 70.0 0 75 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Re 5s 81.8 0.402 75 0.485 0.470 0.456 0.448 0.435 0.421 0.402 0.396Re 4d5 260.0 10.06 75 10.312 10.269 10.227 10.206 10.164 10.122 10.060 10.039Re 4d3 273.5 6.95 75 7.030 7.017 7.003 6.996 6.983 6.970 6.950 6.943Re 4p3 446.4 5.3 75 4.458 4.588 4.722 4.791 4.931 5.076 5.300 5.377

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Relative Sensitivity Factors (RSFs) Used for the SSI Instrument versus Pass Energy Settings

XPS BE Scofield Atom PE=150 V PE=150 PE=100 PE=100 V PE=50 V PE=50 V PE=25 V PE=25 VElement Signal (eV) RSFs # Exp=1.2 Exp=1.0 Exp=0.8 Exp=0.7 Exp=0.5 Exp=0.3 Exp=0 Exp= -0.1

Re 4p1 518.5 2.12 75 1.636 1.708 1.783 1.822 1.903 1.987 2.120 2.166Re 4s 625.2 1.84 75 1.234 1.319 1.410 1.458 1.558 1.665 1.840 1.902Re Auger 1322.3 0 75 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Rh 4d 1.4 0.908 45 1.171 1.122 1.076 1.053 1.009 0.968 0.908 0.889Rh 4p 47.0 1.75 45 2.174 2.097 2.022 1.986 1.915 1.847 1.750 1.719Rh 4s 80.7 0.56 45 0.676 0.655 0.635 0.625 0.606 0.587 0.560 0.551Rh 3d5 307.2 8.39 45 8.205 8.235 8.266 8.281 8.312 8.343 8.390 8.406Rh 3d 309.4 14.19 45 13.845 13.902 13.959 13.988 14.045 14.103 14.190 14.219Rh 3d3 311.9 5.8 45 5.644 5.670 5.696 5.709 5.735 5.761 5.800 5.813Rh 3p3 496.3 7.21 45 5.717 5.942 6.177 6.297 6.545 6.804 7.210 7.351Rh 3p1 521.3 3.64 45 2.799 2.924 3.055 3.123 3.263 3.409 3.640 3.721Rh 3s 627.8 2.7 45 1.804 1.930 2.064 2.134 2.283 2.441 2.700 2.792Rh Auger 1185.5 0 45 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Rh Auger 1234.7 0 45 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Rh Auger 1265.0 0 45 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Rn 6p 11.0 0.2719 86 0.348 0.334 0.320 0.314 0.301 0.289 0.272 0.266Rn 6s 26.0 0.1129 86 0.143 0.137 0.132 0.129 0.124 0.120 0.113 0.111Rn 5d 48.0 3.95 86 4.902 4.729 4.562 4.480 4.322 4.169 3.950 3.880Rn 5p3 127.0 1.67 86 1.937 1.890 1.843 1.821 1.776 1.733 1.670 1.649Rn 5p1 164.0 0.602 86 0.675 0.663 0.650 0.644 0.632 0.620 0.602 0.596Rn 5s 214.0 0.625 86 0.670 0.662 0.654 0.651 0.643 0.636 0.625 0.621Rn 4f 238.0 31.81 86 33.309 33.054 32.801 32.676 32.426 32.178 31.810 31.688Rn 4d5 541.0 14.7 86 11.027 11.568 12.136 12.430 13.041 13.681 14.700 15.056Rn 4d3 567.0 9.9 86 7.182 7.577 7.993 8.210 8.661 9.137 9.900 10.168Rn 4p3 768.0 6.92 86 3.734 4.139 4.587 4.829 5.352 5.931 6.920 7.285Rn 4p1 929.0 2 86 0.796 0.928 1.082 1.169 1.362 1.589 2.000 2.160Rn 4s 1097.0 1.95 86 0.505 0.632 0.792 0.887 1.110 1.391 1.950 2.182Ru 4d 9.0 0.667 44 0.855 0.820 0.787 0.771 0.740 0.710 0.667 0.653Ru 4p 47.9 1.59 44 1.974 1.904 1.836 1.804 1.740 1.678 1.590 1.562

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Relative Sensitivity Factors (RSFs) Used for the SSI Instrument versus Pass Energy Settings

XPS BE Scofield Atom PE=150 V PE=150 PE=100 PE=100 V PE=50 V PE=50 V PE=25 V PE=25 VElement Signal (eV) RSFs # Exp=1.2 Exp=1.0 Exp=0.8 Exp=0.7 Exp=0.5 Exp=0.3 Exp=0 Exp= -0.1

Ru 4s 80.0 0.519 44 0.627 0.608 0.589 0.579 0.562 0.544 0.519 0.511Ru 3d5 280.1 7.39 44 7.426 7.420 7.414 7.411 7.405 7.399 7.390 7.387Ru 3d 282.2 12.49 44 12.525 12.519 12.513 12.510 12.505 12.499 12.490 12.487Ru 3d3 284.2 5.1 44 5.104 5.103 5.103 5.102 5.102 5.101 5.100 5.100Ru 3p3 466.1 6.78 44 5.573 5.758 5.949 6.047 6.248 6.456 6.780 6.892Ru 3p1 488.4 3.44 44 2.754 2.858 2.966 3.021 3.135 3.254 3.440 3.504Ru 3s 591.0 2.57 44 1.806 1.916 2.032 2.092 2.219 2.353 2.570 2.647Ru Auger 1217.0 0 44 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Ru a 1259.8 0 44 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000S 3p 8.0 0.0774 16 0.099 0.095 0.091 0.089 0.086 0.082 0.077 0.076S 3s 16.0 0.1465 16 0.187 0.179 0.172 0.169 0.162 0.156 0.147 0.144S 2p3 163.9 1.107 16 1.242 1.219 1.195 1.184 1.161 1.139 1.107 1.096S 2p 164.0 1.677 16 1.882 1.846 1.811 1.793 1.759 1.726 1.677 1.661S 2p1 165.1 0.553 16 0.620 0.608 0.597 0.591 0.580 0.569 0.553 0.548S loss 185.3 0 16 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000S loss 205.1 0 16 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000S 2s 229.0 1.43 16 1.510 1.497 1.483 1.476 1.463 1.450 1.430 1.424S loss 249.6 0 16 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000S loss 267.5 0 16 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000

Sb 5p 2.0 0.1145 51 0.148 0.141 0.136 0.133 0.127 0.122 0.115 0.112Sb 5s 9.0 0.1085 51 0.139 0.133 0.128 0.125 0.120 0.115 0.109 0.106Sb 4d 31.7 3.14 51 3.950 3.802 3.659 3.590 3.455 3.325 3.140 3.081Sb loss 48.0 0 51 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Sb 4p 100.6 2.88 51 3.418 3.322 3.228 3.183 3.093 3.006 2.880 2.839Sb 4s 152.9 0.848 51 0.961 0.941 0.922 0.912 0.893 0.875 0.848 0.839Sb 3d5 528.2 16.39 51 12.495 13.073 13.678 13.991 14.638 15.315 16.390 16.765Sb 3d 532.6 27.74 51 21.031 22.024 23.065 23.603 24.718 25.885 27.740 28.387Sb 3d3 537.6 11.35 51 8.552 8.965 9.398 9.622 10.087 10.574 11.350 11.621Sb loss 544.2 0 51 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000

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Relative Sensitivity Factors (RSFs) Used for the SSI Instrument versus Pass Energy Settings

XPS BE Scofield Atom PE=150 V PE=150 PE=100 PE=100 V PE=50 V PE=50 V PE=25 V PE=25 VElement Signal (eV) RSFs # Exp=1.2 Exp=1.0 Exp=0.8 Exp=0.7 Exp=0.5 Exp=0.3 Exp=0 Exp= -0.1

Sb loss 553.3 0 51 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Sb 3p3 766.4 9.77 51 5.286 5.856 6.487 6.828 7.564 8.379 9.770 10.283Sb loss 782.2 0 51 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Sb 3p1 812.6 4.76 51 2.379 2.670 2.997 3.176 3.565 4.002 4.760 5.043Sb 3s 944.0 3.36 51 1.294 1.517 1.779 1.926 2.258 2.647 3.360 3.638Sb Auger 945.5 0 51 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Sb Auger 995.0 0 51 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Sb Auger 1022.5 0 51 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Sb Auger 1031.9 0 51 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Sb Auger 1112.9 0 51 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Sc 4p 2.0 0 21 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Sc 4s 11.0 0 21 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Sc 3d 14.0 0.0042 21 0.005 0.005 0.005 0.005 0.005 0.004 0.004 0.004Sc 3p 28.2 0.65 21 0.820 0.789 0.759 0.744 0.716 0.689 0.650 0.638Sc 3s 50.7 0.411 21 0.509 0.491 0.474 0.466 0.449 0.434 0.411 0.404Sc 2p3 398.4 4.21 21 3.738 3.813 3.889 3.928 4.006 4.087 4.210 4.252Sc 2p 401.0 6.38 21 5.648 5.764 5.882 5.942 6.064 6.189 6.380 6.445Sc 2p1 403.2 2.17 21 1.916 1.956 1.997 2.018 2.060 2.104 2.170 2.193Sc 2s 498.0 2.91 21 2.303 2.394 2.489 2.539 2.640 2.745 2.910 2.967Sc Auger 1117.7 0 21 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Sc Auger 1148.9 0 21 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Se 4p 5.3 0.21 34 0.270 0.259 0.248 0.243 0.233 0.224 0.210 0.206Se 3d5 54.9 1.51 34 1.863 1.799 1.737 1.707 1.648 1.591 1.510 1.484Se 3d 55.3 2.29 34 2.825 2.728 2.634 2.588 2.499 2.413 2.290 2.250Se 3d3 55.7 0.778 34 0.959 0.926 0.895 0.879 0.849 0.820 0.778 0.765Se loss 74.9 0 34 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Se Auger 115.5 0 34 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Se Auger 137.8 0 34 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Se 3p3 161.7 2.98 34 3.351 3.286 3.222 3.191 3.129 3.069 2.980 2.951

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Relative Sensitivity Factors (RSFs) Used for the SSI Instrument versus Pass Energy Settings

XPS BE Scofield Atom PE=150 V PE=150 PE=100 PE=100 V PE=50 V PE=50 V PE=25 V PE=25 VElement Signal (eV) RSFs # Exp=1.2 Exp=1.0 Exp=0.8 Exp=0.7 Exp=0.5 Exp=0.3 Exp=0 Exp= -0.1

Se 3p 163.0 4.53 34 5.087 4.990 4.894 4.847 4.754 4.663 4.530 4.486Se Auger 178.7 0 34 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Se Auger 198.4 0 34 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Se Auger 220.5 0 34 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Se 3s 229.9 1.43 34 1.509 1.496 1.482 1.476 1.462 1.449 1.430 1.424Se Auger 255.1 0 34 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Se Auger 284.5 0 34 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Se Auger 296.2 0 34 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Se Auger 315.1 0 34 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Se Auger 358.6 0 34 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Se Auger 388.3 0 34 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Se Auger 399.8 0 34 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Se Auger 453.0 0 34 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Se Auger 474.0 0 34 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Se Auger 497.1 0 34 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Si 3p 2.8 0.014 14 0.018 0.017 0.017 0.016 0.016 0.015 0.014 0.014Si 3s 9.0 0.0808 14 0.104 0.099 0.095 0.093 0.090 0.086 0.081 0.079Si 2p3 99.8 0.539 14 0.640 0.622 0.604 0.596 0.579 0.563 0.539 0.531Si 2p 100.1 0.817 14 0.970 0.943 0.916 0.903 0.878 0.853 0.817 0.805Si 2p1 100.4 0.269 14 0.319 0.310 0.302 0.297 0.289 0.281 0.269 0.265Si loss 116.2 0 14 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Si loss 133.6 0 14 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Si 2s 150.5 0.955 14 1.085 1.062 1.040 1.029 1.007 0.986 0.955 0.945Si loss 167.6 0 14 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Si loss 183.7 0 14 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Si Auger 1395.0 0 14 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000

Sm 4f 7.0 0.851 62 1.092 1.048 1.005 0.984 0.944 0.906 0.851 0.833Sm 5p 19.0 0.75 62 0.953 0.916 0.880 0.863 0.829 0.796 0.750 0.735Sm 5s 41.0 0.261 62 0.326 0.314 0.303 0.297 0.286 0.276 0.261 0.256

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Relative Sensitivity Factors (RSFs) Used for the SSI Instrument versus Pass Energy Settings

XPS BE Scofield Atom PE=150 V PE=150 PE=100 PE=100 V PE=50 V PE=50 V PE=25 V PE=25 VElement Signal (eV) RSFs # Exp=1.2 Exp=1.0 Exp=0.8 Exp=0.7 Exp=0.5 Exp=0.3 Exp=0 Exp= -0.1

Sm 4d 129.0 9.16 62 10.605 10.349 10.100 9.977 9.736 9.502 9.160 9.049Sm 4p3 250.0 3.59 62 3.716 3.695 3.673 3.663 3.642 3.621 3.590 3.580Sm 4p1 283.0 1.7 62 1.703 1.703 1.702 1.702 1.701 1.701 1.700 1.700Sm 4s 349.0 1.42 62 1.330 1.344 1.359 1.367 1.382 1.397 1.420 1.428Sm Auger 682.0 0 62 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Sm 3d5 1081.0 40.37 62 10.969 13.629 16.935 18.878 23.457 29.146 40.370 45.001Sm 3d3 1108.0 27.96 62 6.994 8.811 11.100 12.459 15.696 19.774 27.960 31.382Sn 5p 1.0 0.058 50 0.075 0.072 0.069 0.067 0.064 0.062 0.058 0.057Sn 5s 7.0 0.0922 50 0.118 0.114 0.109 0.107 0.102 0.098 0.092 0.090Sn 4d 24.0 2.7 50 3.418 3.286 3.160 3.098 2.979 2.864 2.700 2.647Sn loss 38.3 0 50 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Sn loss 53.0 0 50 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Sn 4p 90.6 2.67 50 3.196 3.102 3.010 2.965 2.878 2.793 2.670 2.630Sn 4s 137.1 0.794 50 0.913 0.892 0.871 0.861 0.841 0.822 0.794 0.785Sn 3d5 484.9 14.8 50 11.897 12.338 12.795 13.030 13.513 14.014 14.800 15.072Sn 3d3 493.3 10.25 50 8.156 8.473 8.802 8.971 9.319 9.681 10.250 10.447Sn 3d 497.2 25.05 50 19.840 20.627 21.444 21.865 22.731 23.632 25.050 25.541Sn loss 499.0 0 50 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Sn loss 507.5 0 50 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Sn 3p3 714.6 9.35 50 5.499 6.007 6.563 6.860 7.495 8.188 9.350 9.773Sn 3p1 756.2 4.58 50 2.520 2.784 3.076 3.233 3.571 3.945 4.580 4.814Sn loss 770.2 0 50 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Sn 3s 885.2 3.26 50 1.421 1.632 1.874 2.008 2.306 2.649 3.260 3.494Sn Auger 1049.6 0 50 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Sn Auger 1058.0 0 50 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Sn Auger 1129.0 0 50 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Sr 4p 18.4 0.775 38 0.986 0.947 0.910 0.892 0.857 0.823 0.775 0.760Sr 4s 36.6 0.291 38 0.365 0.351 0.338 0.332 0.320 0.308 0.291 0.286Sr loss 50.0 0 38 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000

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Relative Sensitivity Factors (RSFs) Used for the SSI Instrument versus Pass Energy Settings

XPS BE Scofield Atom PE=150 V PE=150 PE=100 PE=100 V PE=50 V PE=50 V PE=25 V PE=25 VElement Signal (eV) RSFs # Exp=1.2 Exp=1.0 Exp=0.8 Exp=0.7 Exp=0.5 Exp=0.3 Exp=0 Exp= -0.1

Sr 3d5 133.7 2.99 38 3.447 3.367 3.288 3.249 3.173 3.098 2.990 2.955Sr 3d 134.0 5.05 38 5.821 5.685 5.552 5.486 5.358 5.233 5.050 4.991Sr 3d3 135.5 2.06 38 2.371 2.316 2.263 2.236 2.184 2.134 2.060 2.036Sr loss 146.0 0 38 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Sr loss 164.0 0 38 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Sr 3p3 268.4 4.37 38 4.443 4.430 4.418 4.412 4.400 4.388 4.370 4.364Sr 3p1 278.7 2.25 38 2.264 2.262 2.259 2.258 2.256 2.254 2.250 2.249Sr loss 300.6 0 38 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Sr loss 308.9 0 38 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Sr 3s 357.2 1.86 38 1.727 1.748 1.770 1.781 1.803 1.826 1.860 1.872Ta 5d 6.0 0.2778 73 0.357 0.342 0.328 0.322 0.308 0.296 0.278 0.272Ta 4f7 21.6 4.82 73 6.114 5.876 5.648 5.537 5.322 5.115 4.820 4.725Ta 4f 22.7 8.62 73 10.924 10.502 10.095 9.898 9.514 9.146 8.620 8.451Ta 4f5 24.0 3.8 73 4.811 4.625 4.447 4.361 4.192 4.031 3.800 3.726Ta 5p3 32.6 0.754 73 0.948 0.912 0.878 0.862 0.829 0.798 0.754 0.740Ta loss 42.7 0 73 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Ta 5p1 45.0 0.346 73 0.430 0.415 0.400 0.393 0.379 0.365 0.346 0.340Ta 5s 67.8 0.363 73 0.443 0.429 0.415 0.408 0.394 0.382 0.363 0.357Ta 4d5 226.1 9.24 73 9.786 9.693 9.601 9.555 9.464 9.374 9.240 9.196Ta 4d3 237.6 6.4 73 6.704 6.652 6.601 6.576 6.525 6.475 6.400 6.375Ta 4p3 400.6 5.02 73 4.446 4.537 4.630 4.677 4.772 4.870 5.020 5.071Ta loss 420.4 0 73 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Ta 4p1 462.5 2.08 73 1.717 1.773 1.830 1.860 1.920 1.983 2.080 2.114Ta 4s 562.8 1.79 73 1.306 1.376 1.450 1.489 1.570 1.654 1.790 1.838Ta Auger 1318.0 0 73 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Tb 4f 7.1 1.967 65 2.525 2.422 2.323 2.275 2.183 2.094 1.967 1.927Tb 5p 21.8 0.804 65 1.020 0.980 0.942 0.924 0.888 0.853 0.804 0.788Tb 5s 40.0 0.281 65 0.351 0.338 0.326 0.320 0.308 0.297 0.281 0.276Tb 4d 148.6 10.87 65 12.367 12.104 11.846 11.720 11.470 11.226 10.870 10.754

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Relative Sensitivity Factors (RSFs) Used for the SSI Instrument versus Pass Energy Settings

XPS BE Scofield Atom PE=150 V PE=150 PE=100 PE=100 V PE=50 V PE=50 V PE=25 V PE=25 VElement Signal (eV) RSFs # Exp=1.2 Exp=1.0 Exp=0.8 Exp=0.7 Exp=0.5 Exp=0.3 Exp=0 Exp= -0.1

Tb loss 175.9 0 65 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Tb Auger 232.9 0 65 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Tb Auger 261.5 0 65 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Tb Auger 284.0 0 65 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Tb 4p3 286.0 3.99 65 3.986 3.987 3.987 3.988 3.988 3.989 3.990 3.990Tb 4p1 311.0 1.84 65 1.792 1.800 1.808 1.812 1.820 1.828 1.840 1.844Tb 4s 395.6 1.54 65 1.372 1.398 1.426 1.439 1.467 1.496 1.540 1.555Tb Auger 411.0 0 65 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Tb Auger 557.1 0 65 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Tb Auger 700.3 0 65 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Tb Auger 808.9 0 65 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Tb 3d5 1242.1 49.42 65 7.316 10.059 13.830 16.217 22.296 30.655 49.420 57.948Tb 3d3 1275.7 32.95 65 4.085 5.786 8.193 9.750 13.807 19.552 32.950 39.211Tb 3p3 1373.3 0 65 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Tc 4d 2.0 0.47 43 0.606 0.581 0.557 0.545 0.522 0.501 0.470 0.460Tc 4p 39.0 1.45 43 1.813 1.747 1.683 1.652 1.592 1.533 1.450 1.423Tc 4s 68.0 0.479 43 0.585 0.565 0.547 0.538 0.520 0.503 0.479 0.471Tc 3d 253.0 11.93 43 12.312 12.248 12.183 12.152 12.088 12.024 11.930 11.899Tc 3d5 253.0 6.47 43 6.677 6.642 6.607 6.590 6.556 6.521 6.470 6.453Tc 3d3 257.0 4.46 43 4.585 4.564 4.543 4.532 4.512 4.491 4.460 4.450Tc 3p3 425.0 6.36 43 5.482 5.619 5.760 5.832 5.978 6.128 6.360 6.439Tc 3p1 445.0 3.23 43 2.721 2.800 2.881 2.923 3.007 3.094 3.230 3.276Tc 3s 544.0 2.45 43 1.831 1.922 2.018 2.067 2.170 2.278 2.450 2.510Te 5p 2.6 0.189 52 0.243 0.233 0.224 0.219 0.210 0.201 0.189 0.185Te 5s 12.0 0.1251 52 0.160 0.154 0.147 0.144 0.139 0.133 0.125 0.123Te 4d 40.1 3.63 52 4.535 4.370 4.211 4.133 3.983 3.838 3.630 3.563Te loss 58.3 0 52 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Te 4p 112.6 3.11 52 3.653 3.556 3.462 3.416 3.326 3.238 3.110 3.069Te 4s 169.1 0.903 52 1.008 0.990 0.972 0.963 0.946 0.928 0.903 0.895

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Relative Sensitivity Factors (RSFs) Used for the SSI Instrument versus Pass Energy Settings

XPS BE Scofield Atom PE=150 V PE=150 PE=100 PE=100 V PE=50 V PE=50 V PE=25 V PE=25 VElement Signal (eV) RSFs # Exp=1.2 Exp=1.0 Exp=0.8 Exp=0.7 Exp=0.5 Exp=0.3 Exp=0 Exp= -0.1

Te 3d5 572.9 18.06 52 13.001 13.733 14.506 14.909 15.749 16.635 18.060 18.561Te 3d 577.0 30.58 52 21.896 23.149 24.475 25.166 26.607 28.130 30.580 31.443Te 3d3 583.3 12.52 52 8.890 9.412 9.965 10.253 10.855 11.493 12.520 12.882Te loss 600.7 0 52 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Te 3p3 819.7 10.21 52 5.038 5.667 6.375 6.762 7.607 8.557 10.210 10.829Te loss 836.5 0 52 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Te 3p1 870.7 4.92 52 2.207 2.522 2.883 3.082 3.523 4.026 4.920 5.260Te loss 888.4 0 52 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Te Auger 959.9 0 52 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Te Auger 969.3 0 52 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Te Auger 994.6 0 52 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Te 3s 1004.8 3.46 52 1.156 1.388 1.666 1.825 2.191 2.630 3.460 3.791Te Auger 1020.3 0 52 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Te Auger 1092.5 0 52 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Te Auger 1131.8 0 52 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Th 6p3 17.0 0.366 90 0.466 0.448 0.430 0.421 0.405 0.389 0.366 0.359Th 6p1 25.0 0.133 90 0.168 0.162 0.156 0.153 0.147 0.141 0.133 0.130Th 6s 42.0 0.1625 90 0.203 0.195 0.188 0.185 0.178 0.172 0.163 0.160Th 5d5 85.0 3.15 90 3.789 3.674 3.563 3.508 3.402 3.299 3.150 3.102Th 5d3 93.0 2.15 90 2.569 2.494 2.421 2.385 2.315 2.248 2.150 2.118Th 5p3 177.0 2.05 90 2.273 2.234 2.196 2.177 2.140 2.104 2.050 2.032Th 5p1 234.0 0.66 90 0.694 0.688 0.682 0.679 0.674 0.668 0.660 0.657Th 5s 294.0 0.702 90 0.696 0.697 0.698 0.698 0.699 0.700 0.702 0.703Th 4f7 333.0 23.94 90 22.797 22.984 23.172 23.267 23.457 23.649 23.940 24.038Th 4f5 342.0 18.81 90 17.744 17.918 18.093 18.181 18.358 18.538 18.810 18.902Th 4d5 676.0 16.31 90 10.170 11.003 11.904 12.382 13.396 14.493 16.310 16.965Th 4d3 713.0 10.82 90 6.379 6.966 7.608 7.950 8.682 9.481 10.820 11.307Th 4p3 965.0 7.46 90 2.741 3.239 3.827 4.160 4.915 5.808 7.460 8.109Th 4p1 1170.0 1.8 90 0.363 0.474 0.619 0.708 0.924 1.207 1.800 2.057

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Relative Sensitivity Factors (RSFs) Used for the SSI Instrument versus Pass Energy Settings

XPS BE Scofield Atom PE=150 V PE=150 PE=100 PE=100 V PE=50 V PE=50 V PE=25 V PE=25 VElement Signal (eV) RSFs # Exp=1.2 Exp=1.0 Exp=0.8 Exp=0.7 Exp=0.5 Exp=0.3 Exp=0 Exp= -0.1

Ti 3d 2.0 0.0136 22 0.018 0.017 0.016 0.016 0.015 0.014 0.014 0.013Ti 4s 10.0 0 22 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Ti 3p 32.4 0.813 22 1.022 0.984 0.947 0.929 0.894 0.861 0.813 0.798Ti 3s 58.2 0.473 22 0.582 0.562 0.543 0.534 0.516 0.498 0.473 0.465Ti 2p3 453.9 5.22 22 4.353 4.486 4.624 4.695 4.839 4.988 5.220 5.300Ti 2p 456.0 7.91 22 6.579 6.784 6.996 7.104 7.326 7.554 7.910 8.032Ti 2p1 460.0 2.69 22 2.227 2.298 2.372 2.409 2.486 2.566 2.690 2.733Ti 2s 560.9 3.24 22 2.369 2.496 2.630 2.699 2.844 2.996 3.240 3.326Ti Auger 1034.9 0 22 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Ti Auger 1067.7 0 22 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Ti Auger 1102.8 0 22 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Tl 5d5 12.0 1.39 81 1.777 1.706 1.637 1.604 1.540 1.478 1.390 1.362Tl 5d 13.0 2.381 81 3.042 2.920 2.803 2.747 2.637 2.531 2.381 2.333Tl 5d3 15.0 0.991 81 1.264 1.214 1.165 1.142 1.097 1.053 0.991 0.971Tl 5p3 73.1 1.25 81 1.519 1.470 1.423 1.400 1.356 1.312 1.250 1.230Tl 5p1 94.6 0.505 81 0.602 0.585 0.568 0.560 0.544 0.528 0.505 0.498Tl 4f7 117.7 11.62 81 13.588 13.238 12.897 12.730 12.403 12.083 11.620 11.470Tl 4f 120.0 20.76 81 24.226 23.610 23.011 22.716 22.139 21.577 20.760 20.495Tl 4f5 122.1 9.14 81 10.646 10.379 10.118 9.991 9.740 9.495 9.140 9.025Tl loss 128.3 0 81 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Tl 5s 137.0 0.52 81 0.598 0.584 0.571 0.564 0.551 0.538 0.520 0.514Tl 4d5 384.9 12.6 81 11.354 11.553 11.755 11.857 12.065 12.276 12.600 12.710Tl 4d3 405.5 8.6 81 7.576 7.738 7.903 7.987 8.157 8.332 8.600 8.691Tl 4p3 609.6 6.19 81 4.242 4.518 4.812 4.966 5.288 5.632 6.190 6.388Tl 4p1 721.5 2.13 81 1.239 1.356 1.484 1.553 1.700 1.860 2.130 2.228Tl 4s 846.7 1.95 81 0.916 1.039 1.178 1.255 1.423 1.614 1.950 2.077Tl Auger 1245.9 0 81 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000

Tm 4f7 8.5 0 69 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Tm 4f5 10.4 0 69 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000

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Relative Sensitivity Factors (RSFs) Used for the SSI Instrument versus Pass Energy Settings

XPS BE Scofield Atom PE=150 V PE=150 PE=100 PE=100 V PE=50 V PE=50 V PE=25 V PE=25 VElement Signal (eV) RSFs # Exp=1.2 Exp=1.0 Exp=0.8 Exp=0.7 Exp=0.5 Exp=0.3 Exp=0 Exp= -0.1

Tm 5p 39.5 0.864 69 1.080 1.041 1.003 0.984 0.948 0.914 0.864 0.848Tm 5s 52.0 0.303 69 0.375 0.362 0.349 0.343 0.331 0.320 0.303 0.298Tm 4d 175.3 13.12 69 14.570 14.318 14.070 13.947 13.706 13.468 13.120 13.006Tm Auger 189.2 0 69 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Tm 4p3 332.3 4.48 69 4.269 4.304 4.338 4.356 4.391 4.426 4.480 4.498Tm 4p1 386.0 1.98 69 1.782 1.814 1.846 1.862 1.895 1.929 1.980 1.997Tm Auger 399.9 0 69 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Tm 4s 468.5 1.67 69 1.369 1.415 1.463 1.487 1.537 1.589 1.670 1.698Tm Auger 586.9 0 69 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Tm Auger 677.9 0 69 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Tm Auger 1367.1 0 69 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000U 6p 20.0 0 92 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000U 6s 44.0 0 92 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000U 5d5 94.0 0 92 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000U 5d3 103.0 0 92 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000U 5p3 195.0 0 92 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000U 5p1 260.0 0 92 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000U 5s 322.0 0 92 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000U 4f7 377.3 27 92 24.531 24.926 25.328 25.531 25.942 26.360 27.000 27.217U 4f 382.0 0 92 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000U 4f5 388.0 0 92 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000U 4d5 736.0 0 92 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000U 4d3 779.0 0 92 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000U 4p3 1043.0 0 92 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000U 4p1 1272.0 0 92 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000V 3d 2.0 0.0309 23 0.040 0.038 0.037 0.036 0.034 0.033 0.031 0.030V 4s 10.0 0 23 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000V 3p 36.7 0.996 23 1.248 1.202 1.157 1.136 1.094 1.054 0.996 0.977V 3s 65.7 0.538 23 0.658 0.636 0.615 0.605 0.585 0.566 0.538 0.529

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Relative Sensitivity Factors (RSFs) Used for the SSI Instrument versus Pass Energy Settings

XPS BE Scofield Atom PE=150 V PE=150 PE=100 PE=100 V PE=50 V PE=50 V PE=25 V PE=25 VElement Signal (eV) RSFs # Exp=1.2 Exp=1.0 Exp=0.8 Exp=0.7 Exp=0.5 Exp=0.3 Exp=0 Exp= -0.1

V 2p3 512.1 6.37 23 4.954 5.166 5.387 5.501 5.737 5.982 6.370 6.505V 2p 515.6 9.66 23 7.481 7.806 8.146 8.322 8.684 9.062 9.660 9.868V 2p1 519.7 3.29 23 2.535 2.647 2.765 2.826 2.951 3.082 3.290 3.362V 2s 626.4 3.57 23 2.391 2.556 2.732 2.825 3.021 3.229 3.570 3.691V Auger 976.8 0 23 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000V Auger 1014.7 0 23 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000V Auger 1055.3 0 23 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000W 5d 2.8 0.434 74 0.559 0.536 0.514 0.503 0.482 0.462 0.434 0.425W 4f7 31.3 5.48 74 6.896 6.637 6.388 6.266 6.031 5.804 5.480 5.376W 4f 32.3 9.8 74 12.322 11.861 11.417 11.201 10.781 10.377 9.800 9.615W 4f5 33.5 4.32 74 5.427 5.224 5.029 4.935 4.751 4.573 4.320 4.239W 5p3 37.0 0.811 74 1.016 0.978 0.942 0.925 0.891 0.858 0.811 0.796W 5p1 46.8 0.367 74 0.456 0.440 0.424 0.417 0.402 0.387 0.367 0.360W loss 58.1 0 74 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000W 5s 75.1 0.383 74 0.465 0.450 0.436 0.429 0.415 0.402 0.383 0.377W 4d5 243.1 9.65 74 10.055 9.986 9.918 9.884 9.817 9.750 9.650 9.617W 4d3 255.6 6.68 74 6.877 6.843 6.810 6.794 6.761 6.729 6.680 6.664W loss 267.7 0 74 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000W 4p3 423.3 5.16 74 4.456 4.566 4.679 4.737 4.854 4.974 5.160 5.223W 4p1 490.5 2.1 74 1.677 1.741 1.807 1.842 1.912 1.985 2.100 2.140W 4s 593.6 1.81 74 1.268 1.345 1.427 1.470 1.560 1.656 1.810 1.865Xe 5p 7.0 0.3961 54 0.508 0.488 0.468 0.458 0.440 0.422 0.396 0.388Xe 5s 17.0 0.1596 54 0.203 0.195 0.187 0.184 0.177 0.170 0.160 0.156Xe 4d 62.0 4.68 54 5.741 5.548 5.363 5.272 5.096 4.925 4.680 4.601Xe 4p 139.0 3.58 54 4.108 4.015 3.924 3.879 3.791 3.705 3.580 3.539Xe 4s 207.0 1.02 54 1.100 1.086 1.073 1.066 1.053 1.039 1.020 1.014Xe 3d5 669.7 21.79 54 13.714 14.814 16.003 16.632 17.967 19.408 21.790 22.647Xe 3d 675.0 36.89 54 23.037 24.918 26.952 28.030 30.319 32.794 36.890 38.366Xe 3d3 682.4 15.1 54 9.327 10.106 10.952 11.400 12.353 13.386 15.100 15.719

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Relative Sensitivity Factors (RSFs) Used for the SSI Instrument versus Pass Energy Settings

XPS BE Scofield Atom PE=150 V PE=150 PE=100 PE=100 V PE=50 V PE=50 V PE=25 V PE=25 VElement Signal (eV) RSFs # Exp=1.2 Exp=1.0 Exp=0.8 Exp=0.7 Exp=0.5 Exp=0.3 Exp=0 Exp= -0.1

Xe 3p3 934.0 10.99 54 4.327 5.055 5.904 6.381 7.453 8.706 10.990 11.878Xe 3p1 996.0 5.2 54 1.775 2.123 2.540 2.778 3.323 3.975 5.200 5.687Xe 3s 1141.0 3.62 54 0.812 1.041 1.336 1.513 1.942 2.491 3.620 4.100Y 4d 6.0 0.031 39 0.040 0.038 0.037 0.036 0.034 0.033 0.031 0.030Y 4p 23.3 0.091 39 0.115 0.111 0.107 0.104 0.100 0.097 0.091 0.089Y loss 35.3 0 39 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Y 4s 44.4 0.329 39 0.410 0.395 0.381 0.374 0.360 0.348 0.329 0.323Y loss 58.9 0 39 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Y 3d5 155.8 3.54 39 4.001 3.920 3.841 3.802 3.725 3.650 3.540 3.504Y 3d 157.0 5.98 39 6.752 6.617 6.484 6.419 6.290 6.164 5.980 5.920Y 3d3 157.9 2.44 39 2.753 2.698 2.644 2.618 2.566 2.515 2.440 2.416Y loss 168.8 0 39 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Y 3p3 299.2 4.75 39 4.683 4.694 4.705 4.711 4.722 4.733 4.750 4.756Y 3p1 311.1 2.44 39 2.377 2.387 2.398 2.403 2.413 2.424 2.440 2.445Y 3s 393.8 1.98 39 1.767 1.801 1.835 1.853 1.888 1.924 1.980 1.999

Yb 4f7 1.2 3.19 70 4.114 3.943 3.780 3.700 3.547 3.399 3.190 3.123Yb 4f 2.0 5.58 70 7.192 6.894 6.609 6.470 6.202 5.945 5.580 5.463Yb 4f5 2.5 2.39 70 3.079 2.952 2.830 2.771 2.656 2.546 2.390 2.340Yb 5p 23.5 0.876 70 1.109 1.067 1.025 1.005 0.967 0.929 0.876 0.859Yb 5s 52.3 0.308 70 0.381 0.368 0.355 0.349 0.337 0.325 0.308 0.303Yb 4d5 182.1 8.07 70 8.906 8.761 8.618 8.548 8.408 8.271 8.070 8.004Yb 4d3 190.9 5.61 70 6.141 6.049 5.959 5.914 5.826 5.738 5.610 5.568Yb 4p3 339.8 4.6 70 4.349 4.390 4.431 4.452 4.494 4.536 4.600 4.622Yb 4p1 390.3 2 70 1.792 1.825 1.859 1.876 1.910 1.946 2.000 2.018Yb 4s 480.8 1.7 70 1.373 1.423 1.475 1.501 1.555 1.612 1.700 1.731Yb Auger 1363.6 0 70 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Zn 3d 9.7 0.81 30 1.037 0.996 0.955 0.936 0.898 0.862 0.810 0.793Zn loss 20.2 0 30 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Zn 3p 88.3 2.828 30 3.392 3.291 3.193 3.145 3.051 2.960 2.828 2.785

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Relative Sensitivity Factors (RSFs) Used for the SSI Instrument versus Pass Energy Settings

XPS BE Scofield Atom PE=150 V PE=150 PE=100 PE=100 V PE=50 V PE=50 V PE=25 V PE=25 VElement Signal (eV) RSFs # Exp=1.2 Exp=1.0 Exp=0.8 Exp=0.7 Exp=0.5 Exp=0.3 Exp=0 Exp= -0.1

Zn loss 102.9 0 30 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Zn 3s 139.5 1.04 30 1.193 1.166 1.140 1.127 1.101 1.076 1.040 1.028Zn loss 152.0 0 30 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Zn Auger 471.5 0 30 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Zn Auger 494.6 0 30 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Zn Auger 558.5 0 30 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Zn Auger 573.0 0 30 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Zn Auger 581.8 0 30 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Zn Auger 652.2 0 30 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Zn Auger 659.4 0 30 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Zn 2p3 1021.8 18.92 30 6.054 7.320 8.851 9.733 11.769 14.230 18.920 20.805Zn loss 1031.0 0 30 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Zn 2p1 1044.8 9.8 30 2.951 3.604 4.402 4.865 5.943 7.259 9.800 10.831Zn loss 1055.5 0 30 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Zn 2s 1196.4 5.76 30 1.047 1.391 1.849 2.131 2.831 3.761 5.760 6.639Zr 4d 2.0 0.085 40 0.110 0.105 0.101 0.099 0.094 0.091 0.085 0.083Zr 5s 10.0 0 40 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Zr 4p 26.8 1.05 40 1.326 1.276 1.227 1.203 1.157 1.113 1.050 1.030Zr 4s 50.3 0.367 40 0.455 0.439 0.423 0.416 0.401 0.387 0.367 0.361Zr 3d5 178.7 4.17 40 4.616 4.539 4.463 4.425 4.351 4.277 4.170 4.135Zr 3d 179.9 7.04 40 7.785 7.656 7.528 7.466 7.341 7.219 7.040 6.981Zr 3d3 181.1 2.87 40 3.170 3.118 3.067 3.041 2.991 2.942 2.870 2.846Zr loss 196.1 0 40 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Zr 3p3 329.4 5.14 40 4.913 4.950 4.988 5.006 5.044 5.082 5.140 5.159Zr 3p1 343.0 2.64 40 2.488 2.513 2.538 2.550 2.576 2.601 2.640 2.653Zr loss 359.3 0 40 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Zr 3s 429.6 2.1 40 1.801 1.847 1.895 1.920 1.970 2.021 2.100 2.127Zr Auger 1337.7 0 40 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Zr Auger 1368.2 0 40 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000Zr Auger 1392.6 0 40 0.000 0.000 0.000 0.000 0.000 0.000 0.000 0.000

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Page 655: Vol 1 - XPS of Elements & Native Oxides - 1999

BE Lookup Table for Signals from Elements and Common Chemical Species 1-82 eV

1.0 Bi 6p1 3.9 Pt 5d 10.0 P 3p 18.0 At 6s 24.0 Kr 4s 34.0 K 3s 44.0 Ra 6s 52.0 Tm 5s 65.7 V 3s1.0 Ce 4f 4.0 Ir 5d 10.0 Ti 4s 18.0 Ce 5p 24.0 Sn 4d 35.0 Re 5p3 44.0 U 6s 52.3 Yb 5s 66.0 Ni 3p1.0 Co 3d 4.0 Pm 4f 10.0 V 4s 18.0 Pr 5p 25.0 Th 6p1 35.2 Mo 4p 44.4 Y 4s 52.6 Fe 3p 66.0 Pt 5p11.0 Cr 3d 4.5 Ag 4d 10.0 Zr 5s 18.1 Hf Ntv Ox 26.0 Bi 5d3 35.2 W Na2WO4 45.0 Ta 5p1 53.0 Sn loss 67.8 Ta 5s1.0 Fe 3d 4.8 Dy 5d 10.5 Bi 6s 18.2 C 2s 26.0 He 1s 35.3 Y loss 45.1 As 2O3 53.4 Os 4f5 68.0 Ra 5d1.0 Ga 4p 5.0 B 2p 10.7 Cd 4d5 18.4 Sr 4p 26.0 Rn 6s 35.8 W O3 45.5 As Ntv Ox 54.0 Os 5p1 68.0 Tc 4s1.0 Hf 5d 5.0 Br 4p 11.0 Kr 4p 18.7 Ga 3d5 26.1 Lu 5p 36.0 Ce 5s 45.7 Ge loss 54.2 Se CdSe 68.5 Br 3d51.0 In 5p 5.0 Ca 3d 11.0 Rn 6p 18.8 Ga 3d 26.8 Ta 2O5 36.0 Gd 5s 46.0 Re 5p1 54.5 Se GeSe 68.5 Br KBr1.0 Na 3s 5.0 Er 4f 11.0 Sc 4s 18.9 Ga 3d3 26.8 Zr 4p 36.6 Sr 4s 46.3 Ga loss 54.9 Se 3d5 68.8 Cd 4p1.0 Os 5d 5.0 Po 6p 11.1 Cs 5p3 19.0 Eu 5p 27.0 Br 4s 36.7 V 3p 46.8 Re 2O7 54.9 Li 1s 69.0 Br 3d1.0 Pb 6p 5.3 Se 4p 11.6 Cd 4d3 19.0 Nd 5p 28.2 Sc 3p 37.0 W 5p3 46.8 W 5p1 54.9 Li OH 69.5 Br 3d31.0 Sn 5p 5.5 Cl 3p 12.0 Cs 5p 19.0 Pb 5d5 28.6 In loss 37.5 Hf 5p1 47.0 Mn 3p 54.9 Se 3d 70.0 Re loss1.2 Yb 4f7 5.8 Au 5d 12.0 Po 6s 19.0 Ra 6p 28.8 Rb 4s 38.0 Pm 5s 47.0 Rh 4p 55.2 Se GeSe2 71.0 Pt 4f71.4 Pd 4d 6.0 Ta 5d 12.0 Te 5s 19.0 Sm 5p 29.0 Dy 5p1 38.0 Pr 5s 47.9 Ru 4p 55.3 Li CO3 71.8 Mg loss1.4 Rh 4d 6.0 Y 4d 12.0 Tl 5d5 19.1 Ga Sb fract 29.0 Er 5p 38.3 Sn loss 48.0 Dy 5s 55.6 Nb 4s 72.6 Pt 4f2.0 Cd 5p 6.2 Hg 5d 12.6 Cs 5p1 19.4 Ga AlAs etch 29.0 Lu 5p 39.0 Eu 5s 48.0 Rn 5d 55.7 Se 3d3 72.7 Al 2p32.0 Mg 3s 6.9 Eu 4f 13.0 Tl 5d 19.5 N 2s 29.1 Ge 3d5 39.0 Nd 5s 48.0 Sb loss 56.8 Au 5p3 72.9 Al 2p2.0 Mo 4d 7.0 O 2p 13.2 Rb 4p 19.7 Ga P fract 29.2 F 2s 39.0 Tc 4p 48.5 I 4d 56.8 Lu 5s 73.1 Tl 5p32.0 Nb 4d 7.0 Sm 4f 13.2 Rb 4p 19.7 Ga As fract 29.4 Ge 3d 39.5 Tm 5p 49.5 Ho 5s 57.4 Er 5s 73.2 Al 2p12.0 Nd 4f 7.0 Sn 5s 14.0 Ne 2p 20.0 U 6p 29.5 Ho 5p1 40.0 At 5d 49.5 Mg CO3 58.0 Ag 4p 73.8 Al N2.0 Ni 3d 7.0 Xe 5p 14.0 Sc 3d 20.2 Zn loss 29.7 Ge 3d3 40.0 Ba 5s 49.6 Mg (OH)2 58.0 Fr 5d 74.0 Au 5p12.0 Pr 4f 7.1 Lu 4f7 14.2 Hf 4f7 20.5 Gd 5p 30.2 Ge Se 40.0 In loss 49.6 Mg 2p3 58.0 Hg 5p3 74.2 Cr 3s2.0 Sb 5p 7.1 Tb 4f 15.0 Fr 6p 20.7 Ga 2O3 30.3 Na 2p 40.0 Tb 5s 49.7 Mg O 58.1 W loss 74.3 Al 2O32.0 Sc 4p 7.7 Gd 4f 15.0 H 1s 21.0 Pb 5d3 30.9 Nb 4p 40.1 Te 4d 49.8 Mg 2p 58.2 Ti 3s 74.3 Al 2O3-nH2O2.0 Tc 4d 7.8 Dy 4f 15.0 Hf 4f 21.6 Ta 4f7 30.9 Pb loss 40.2 Re 4f7 49.9 Mg 2p1 58.3 Te loss 74.4 Pt 4f52.0 Ti 3d 8.0 At 6p 15.0 Rb 4p1 21.8 Tb 5p 31.0 Hf 5p3 41.0 Ne 2s 50.0 Mg CO3 58.6 Ag 4p 74.4 Al (OH)32.0 V 3d 8.0 S 3p 15.0 Tl 5d3 22.0 Dy 5p3 31.0 Po 5d 41.0 Sm 5s 50.0 Sr loss 58.9 Y loss 74.9 Cu 3p2.0 Yb 4f 8.3 Ho 4f 15.7 Cl 3s 22.0 Pm 5p 31.3 W 4f7 41.2 Re 4f 50.3 Zr 4s 59.0 Co 3p 74.9 Se loss2.0 Zr 4d 8.3 Lu 5d 15.9 Hf 4f5 22.3 Ar 3s 31.5 Ge Se2 41.4 Re Ntv Ox 50.4 Mg NtvOx1 59.2 As loss 75.0 Cs 4d52.5 Yb 4f5 8.4 Lu 2O3 15.9 I 5s 22.7 Ta 4f 31.7 Sb 4d 41.5 As 3d5 50.7 Os 4f7 60.8 Ir 4f7 75.1 Pt O2-nH2O2.6 Te 5p 8.5 Tm 4f7 16.0 K 3p 23.0 Cs 5s 32.1 Ga loss 41.8 As 3d 50.7 Pd 4p 61.0 Mg loss 75.1 W 5s2.8 Cu 3d 8.6 Lu 4f5 16.0 P 3s 23.1 O 2s 32.3 W 4f 42.0 As S 50.7 Sc 3s 62.0 Ir 4f 75.5 Al Ntv Ox2.8 Mn 3d 8.9 Ar 3p 16.0 S 3s 23.3 Ho 5p3 32.4 Ti 3p 42.0 Th 6s 50.9 Mg reoxid 62.0 Ir O2 76.0 Cs 4d2.8 Re 5d 9.0 F 2p 16.9 In 4d 23.3 Y 4p 32.6 Ta 5p3 42.1 Ca 3s 51.0 Ir 5p3 62.0 Ir 5p1 77.8 Ni loss2.8 Si 3p 9.0 Ru 4d 17.0 La 5p 23.4 Ta S2 33.0 La 5s 42.1 Cr 3p 51.0 Mg NtvOx2 62.0 Mo 4s 78.3 In 4p2.8 W 5d 9.0 Sb 5s 17.0 Th 6p3 23.5 Ca 3p 33.2 Ge O2 42.2 As 3d3 51.4 Os 4f 62.0 Xe 4d 79.0 Cs 4d33.0 Ge 4p 9.0 Si 3s 17.0 Xe 5s 23.5 Yb 5p 33.4 Lu 5p 42.7 Re 4f5 51.5 Pt 5p3 62.3 Hf 5s 80.0 Ru 4s3.0 I 5p 9.1 As 4p 17.1 Hf O2 23.8 Bi 5d 33.5 W 4f5 42.7 Ta loss 51.5 Mg reoxid 62.7 Ir Ntv Ox 80.7 Rh 4s3.0 Pb 6s 9.7 Zn 3d 17.7 Pb 5d 24.0 Ta 4f5 33.8 Ge Ntv Ox 43.0 As 2S3 51.7 Re loss 63.3 Na 2s 81.0 Hg 5p13.2 Bi 6p3 10.0 Ba 5p 17.9 Ga InAs (ar) 24.0 Bi 5d5 34.0 Fr 6s 44.0 Os 5p3 51.9 Mg NtvOx3 63.8 Ir 4f5 81.8 Re 5s

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Page 656: Vol 1 - XPS of Elements & Native Oxides - 1999

BE Lookup Table for Signals from Elements and Common Chemical Species 82-275 eV

82.0 Br loss 101.8 Si Almand. 119.4 Ga loss 137.8 Pb 2O3 158.9 Y 2(CO3)3 181.0 Ge 3s 204.1 Nb NbO 235.3 Mg Auger82.0 Mn 3s 101.9 Hg 4f 119.4 Tl CO3 137.8 Se Auger 159.2 Bi Ntv Ox 181.1 Zr 3d3 205.0 Nb 3d3 237.0 Pm 4p382.7 Pb 5p3 102.0 Pt 5s 120.0 Hg 5s 138.3 Pb 4f 159.6 Ho 4d5 181.2 Br 3p3 205.1 S loss 237.6 Ta 4d384.0 Au 4f7 102.0 Si 3N4 120.0 Tl 4f 138.5 Ge loss 160.0 Bi 5s 182.0 Br 3p 205.8 Lu 4d3 237.9 Rb 3p384.0 Ba 4d3 102.6 Si O 121.0 Pm 4d 138.8 Pb Ntv Ox 161.2 S PbS 182.0 Fr 5p1 206.1 Nb NbO2 238.0 Cs 4s84.7 Ba 4d 102.9 Zn loss 121.1 I 4p 139.0 Pb CO3 161.3 Ho 2O3 182.1 Yb 4d5 207.0 Ce 4p3 238.0 Rn 4f85.0 Au 4f 103.0 Ga 3p 122.0 Ge 3p3 139.0 Xe 4p 161.5 S CuS, TaS2 182.4 Zr O2 207.0 Xe 4s 238.9 Mo loss85.0 Th 5d5 103.0 Ga 3p3 122.1 Tl 4f5 139.5 Zn 3s 161.7 Se 3p3 182.8 Er Auger 207.3 P loss 241.8 Ar 2p386.0 Ba 4d5 103.0 Pt loss 122.4 Cu 3s 140.0 Fr 5p3 161.9 S HgS 183.7 Si loss 207.4 Nb Nb2O5 242.0 Ar 2p86.9 Kr 3d5 103.0 Si O2 122.4 In 4s 140.3 Gd 4d5 162.2 S MoS2 184.0 Po 4f 207.4 Nb Ntv Ox 243.1 W 4d587.2 Kr 3d 103.0 U 5d3 127.0 Rn 5p3 140.7 As 3p3 162.3 Bi 4f5 184.9 Yb 2O3 208.0 Kr 3p3 243.9 Ar 2p187.7 Au 4f5 103.5 Si O2-nH2O 128.2 Eu 4d5 141.2 Gd 2O3 162.4 S Na2S2O3 185.3 S loss 210.0 At 4f 245.0 Nd 4p188.0 Al loss 103.7 Al loss 128.3 Tl loss 141.7 Pb 4f5 162.6 S FeS2 185.5 I 4s 210.8 Hf 4d5 248.0 Ba 4s88.1 Au 2O3 103.9 Hg 4f5 128.6 P InP etch 142.0 As 3p 163.9 S 2p3 187.8 Br 3p1 210.9 Dy Auger 248.0 Rb 3p188.2 Kr 3d3 104.0 La 4d 129.0 Ge 3p1 145.9 Tb 4d5 164.0 Rn 5p1 187.9 B CrB 213.0 B loss 249.6 S loss88.2 Pd 4s 104.0 Po 5p3 129.0 P InP etch 146.0 Sr loss 164.0 S 2p 188.0 B 1s 213.0 La 4p1 250.0 Sm 4p388.3 Zn 3p 106.3 Pb 5p1 129.0 Sm 4d 147.0 As 3p1 164.0 Sr loss 188.0 B MoB, LaB6 214.0 Rn 5s 253.0 Mo loss89.0 Os 5s 107.0 Ga 3p1 129.3 P GaP etch 148.0 At 5p1 165.1 S 2p1 188.1 B WB 217.5 Cl loss 253.0 Tc 3d89.1 Mg 2s 108.0 Au 5s 130.0 Be loss 148.0 Pb 5s 166.6 S Na2SO3 188.2 B Ni3B 218.0 Pr 4p3 253.0 Tc 3d590.6 Sn 4p 109.7 Rb 3d5 130.0 Ho Auger 148.5 Tb F3 167.3 Er 4d5 188.9 B Ntv Ox 220.5 Se Auger 254.0 Ra 5s91.0 Fe 3s 109.7 Rb OAc 130.1 P 2p3 148.8 Al loss 167.3 Se 3p1 189.0 P 2s 221.3 Hf 4d3 255.0 Br 3s92.8 Bi 5p3 109.9 Cd 4s 130.6 P 2p 149.8 Pb loss 167.6 Si loss 189.2 Tm Auger 223.0 Ce 4p1 255.0 Eu 4p393.0 Th 5d3 110.0 Ce 4d 131.4 P 2p1 149.9 P loss 168.5 Er 2O3 190.8 B N 225.7 As 3s 255.0 Pm 4p194.0 U 5d5 110.0 Rb 3d 132.0 Po 5p1 149.9 Tb 3O7 168.5 S Na2SO4 190.9 Yb 4d3 226.1 Ta 4d5 255.1 Se Auger94.6 Tl 5p1 110.5 Ni 3s 132.7 Ga loss 150.5 Si 2s 168.5 S Na2S2O3 194.0 B 2O3 228.0 Mo 3d5 255.6 W 4d395.2 Ir 5s 110.6 Mg loss 133.4 Al loss 152.0 Zn loss 168.6 P loss 195.0 At 5s 228.0 Nd 4p3 257.0 Tc 3d396.0 Br loss 111.2 Rb 3d3 133.6 Si loss 152.3 Dy 4d5 168.8 Y loss 195.0 U 5p3 229.0 S 2s 260.0 Re 4d597.0 Ag 4s 111.8 Be 1s 133.7 Sr 3d5 152.9 Sb 4s 169.1 Te 4s 196.0 Lu 4d5 229.4 Mo O2 (?) 260.0 U 5p198.7 Er Auger 112.6 Te 4p 133.7 Sr CO3 153.0 Ra 5p3 169.3 Er 4d3 196.1 Zr loss 229.5 Mo 3d 261.0 As Auger99.8 Si 2p3 113.6 Be O 134.0 Sr 3d 155.8 Y 3d5 173.0 Ba 4p 197.0 La 4p3 229.7 Mo S2 261.5 Tb Auger99.8 Mg loss 114.7 Be Ntv Ox 134.9 Sm 2O3 156.1 Dy 2O3 173.3 Ga loss 197.5 Ge Auger 229.9 Se 3s 264.3 Rb loss99.9 Hg 4f7 115.0 At 5p3 135.5 Sr 3d3 156.6 Y 2O3 175.4 Tm 4d 198.4 Se Auger 230.0 As Auger 267.5 S loss100.1 Si 2p 115.0 Pr 4d 135.6 Eu 2O3 157.0 Bi 4f7 175.9 Tb loss 198.7 Cl 2p 231.1 Mo 3d3 267.7 W loss100.2 Si O 115.5 Se Auger 136.8 Pb O2 157.0 Bi 4f 176.3 Tm 2O3 198.9 Cl 2p3 232.6 Mo Ntv Ox 268.0 Fr 4f100.4 Si 2p1 116.2 Si loss 136.8 Rb loss 157.0 Bi loss 177.0 Po 5s 198.9 Cl MCl 232.9 Tb Auger 268.4 Sr 3p3100.4 Si C 117.7 Tl 4f7 136.9 Pb 4f7 157.0 Y 3d 177.0 Th 5p3 199.8 Cl C-Cl 233.0 Kr 3p1 270.0 Cl 2s100.6 Sb 4p 117.9 Al 2s 137.0 Tl 5s 157.9 Y 3d3 178.7 Se Auger 200.0 Ra 5p1 233.1 Mo O3 271.3 Gd 4p3100.7 Hg O 118.0 Nd 4d 137.1 Sn 4s 158.5 Cs 4p3 178.7 Zr 3d5 200.5 Cl 2p1 234.0 Fr 5s 273.5 Re 4d3100.9 Co 3s 118.2 Bi 5p1 137.5 Pb O 158.8 Bi 2O3 179.9 Zr 3d 201.4 Nb 3d 234.0 Pr 4p1 274.5 Er Auger100.9 Hg S 118.2 Tl 2O3 137.6 Pb 3O4 158.9 Ga 3s 180.9 Cs 4p1 202.3 Nb 3d5 234.0 Th 5p1 275.0 La 4s

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Page 657: Vol 1 - XPS of Elements & Native Oxides - 1999

BE Lookup Table for Signals from Elements and Common Chemical Species 278-609 eV

278.7 Sr 3p1 301.6 Mg Auger 340.3 Pd 3d3 382.0 U 4f 412.7 Lu 4p1 460.2 Gd Auger 515.0 Eu Auger 560.0 Pd 3p1279.0 Os 4d5 305.0 Pr 4s 341.4 Ge Auger 384.9 Tl 4d5 420.4 Ta loss 462.5 Ta 4p1 515.6 V 2p 560.9 Ti 2s280.1 Ru 3d5 305.5 K loss 342.0 Th 4f5 386.0 Tm 4p1 421.6 Mo loss 463.1 In loss 515.9 V 2O3 562.8 Ta 4s281.0 Ru Ntv Ox 307.2 Rh 3d5 343.0 Ho 4p1 388.0 U 4f5 423.3 W 4p3 464.0 Bi 4d3 517.1 V 2O5 565.0 Na Auger281.1 Ru O2 308.5 Rh Ntv Ox 343.0 Zr 3p1 388.3 Se Auger 424.5 N loss 466.1 Ru 3p3 517.3 V O2 567.0 Rn 4d3282.2 Ru 3d 308.9 Rh 2O3 346.5 Pd loss 389.8 K loss 425.0 As Auger 466.8 Nb 3s 518.5 Re 4p1 568.1 Cu Auger282.6 C VC 308.9 Sr loss 346.6 Ca 2p 390.3 Yb 4p1 425.0 Tc 3p3 468.0 As Auger 519.0 As Auger 570.9 Ga Auger282.9 C NbC 309.4 Rh 3d 347.1 Ca O 391.7 Ga Auger 425.5 Pb loss 468.5 Tm 4s 519.6 Pt 4p3 572.5 Te CdTe283.0 C TaC 310.4 Ge Auger 347.2 Mg Auger 391.7 Mg Auger 429.6 Zr 3s 471.0 Os 4p3 519.7 V 2p1 572.9 Te 3d5283.0 Sm 4p1 311.0 Tb 4p1 347.8 Ca UHV Ox 393.8 Mo 3p3 433.0 Ge Auger 471.5 Zn Auger 521.3 Rh 3p1 573.0 Zn Auger284.0 Tb Auger 311.1 Y 3p1 349.0 Sm 4s 393.8 Y 3s 434.3 Pb 4d3 473.0 Po 4d5 524.0 Na Auger 573.6 Ag 3p3284.2 Ru 3d3 311.9 Ir 4d3 353.0 Au 4d3 395.6 Tb 4s 436.0 Ho 4s 474.0 Se Auger 524.8 Ge Auger 574.1 Cr B284.5 C HOPG 311.9 Rh 3d3 357.2 Sr 3s 397.0 N CrN 437.3 Hf 4p1 474.7 In loss 528.2 Sb 3d5 574.3 Cr 2p3284.5 Se Auger 312.5 Mg Auger 357.9 Ge Auger 397.1 N AlN 437.8 Ca 2s 480.8 Yb 4s 529.4 O Ag2O, NiO 575.0 Cr 2p285.0 C 1s 313.0 C loss 357.9 Mg Auger 397.3 N TiN 440.0 Bi 4d5 484.9 Sn 3d5 529.6 Sb 2O3 575.5 Cr Ntv Ox285.4 C C-OR 314.5 Pt 4d5 358.3 Hg 4d5 397.6 N Si3N4 443.6 Ge Auger 486.3 Sn O 529.8 O MgO 575.6 Cr 2O3286.0 Cl loss 315.1 Se Auger 358.6 Se Auger 398.4 N 1s 443.8 In 3d5 486.4 Ga Auger 530.5 O NaOH 576.5 Te O2286.0 Tb 4p3 315.2 Ho 4p3 359.0 As Auger 398.4 N BN 444.3 In 2O3 487.3 Sn O2 531.1 O Al2O3 576.6 Cr Ntv Ox287.0 C C-Cl 319.5 Ar 2s 359.2 Lu 4p3 398.4 Sc 2p3 444.4 In Ntv Ox 488.4 Ru 3p1 531.1 Sb 2O5 577.0 Fr 4d5287.8 C C=O, C-F 320.0 Nd 4s 359.3 Zr loss 399.8 Se Auger 444.8 In P fract 488.8 Ho Auger 531.8 O 1s LiOH 577.0 Te 3d288.9 C COOR 320.8 Er 4p3 360.8 Nb 3p3 399.9 Tm Auger 444.9 In GaAs 490.5 W 4p1 532.3 Pd 3p3 577.2 Hg 4p3289.0 Eu 4p1 321.2 K loss 363.0 Eu 4s 400.6 Ta 4p3 445.0 Tc 3p1 493.3 Sn 3d3 532.5 Ga Auger 577.7 Cr Ntv Ox289.0 Kr 3s 321.8 Rb 3s 363.6 Ga Auger 401.0 Sc 2p 445.2 In Ntv OH 494.6 Zn Auger 532.5 O B2O3, SiO2 578.2 Ir 4p1289.4 C MCO3 322.0 U 5s 363.7 Dy Auger 401.9 Sc 2O3 445.9 In Ntv CO3 494.8 Ir 4p3 532.6 Sb 3d 579.5 Cr O3290.0 Ce 4s 323.6 Mg Auger 366.0 Er 4p1 402.2 N H4 446.4 Re 4p3 496.3 Rh 3p3 532.9 O HgO 579.8 Ge Auger290.6 Gd 4p1 326.8 Ge Auger 366.8 Ag 2S 403.2 Sc 2p1 446.9 Pb loss 497.1 Se Auger 533.0 At 4d3 580.0 Cr KCrO4290.8 C C-CO3, CF2 329.4 Zr 3p3 367.7 Ag O 404.1 Cd O 447.3 Ga Auger 497.2 Sn 3d 533.8 Hf 4s 581.8 Zn Auger291.7 C pi->pi* 331.0 Pm 4s 368.2 Ag Ag, Ag2O 405.0 Cd 3d5 448.0 In 3d 497.4 Na Auger 536.4 Na Auger 583.3 Te 3d3292.7 C CF3 331.2 Pt 4d3 368.5 Mg Auger 405.1 Cd Te 450.3 Er 4s 498.0 Sc 2s 537.6 Sb 3d3 583.5 Cr 2p1292.9 K 2p3 KX 332.0 Dy 4p1 370.0 Eu Auger 405.4 Cd Se, CO3 451.4 In 3d3 499.0 Sn loss 541.0 Rn 4d5 586.2 Er Auger293.0 Os 4d3 332.3 Tm 4p3 371.0 Ag 3d 405.5 Tl 4d3 453.0 Se Auger 500.0 Po 4d3 544.0 Tc 3s 586.9 Tm Auger294.0 Th 5s 333.0 Th 4f7 371.0 As Auger 406.7 Cd (OH)2 453.9 Ti 2p3 503.8 Ga Auger 544.2 Sb loss 588.9 Ga Auger295.0 K 2p 333.1 Mg Auger 374.2 Ag 3d3 407.2 N O3 454.3 Na Auger 505.0 Mo 3s 546.3 Au 4p3 591.0 Ru 3s295.6 Dy 4p3 334.0 Au 4d5 376.0 Gd 4s 408.0 Cd 3d 455.1 Ti O 507.0 At 4d5 548.0 Os 4p1 593.6 W 4s295.7 K 2p1 335.0 Pd 3d5 376.2 Nb 3p1 411.0 Tb Auger 456.0 Ti 2p 507.5 Sn loss 548.1 Cu Auger 600.0 Gd Auger296.2 Ir 4d5 335.4 Pd Ntv Ox 377.2 K 2s 411.3 Mo 3p1 457.4 Ti 2O3 507.9 Lu 4s 552.4 Na Auger 600.7 Te loss296.2 Se Auger 337.0 Pd O 377.3 U 4f7 411.7 Cd 3d3 458.0 As Auger 512.1 V 2p3 553.2 O loss 603.0 Fr 4d3299.0 Ra 4f 337.5 Pd 3d 377.8 Hg 4d3 412.0 Pb 4d5 458.2 Ti CaTiO3 513.2 Na Auger 553.3 Sb loss 603.0 Ra 4d5299.2 Y 3p3 339.0 As Auger 379.5 Hf 4p3 412.3 Ge Auger 458.7 Ti O2 513.5 Ga Auger 557.1 Tb Auger 604.0 Ag 3p1300.6 Sr loss 339.8 Yb 4p3 381.0 Mg Auger 412.6 Dy 4s 460.0 Ti 2p1 513.9 Dy Auger 558.5 Zn Auger 609.1 Pt 4p1

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Page 658: Vol 1 - XPS of Elements & Native Oxides - 1999

BE Lookup Table for Signals from Elements and Common Chemical Species 609-1395 eV

609.6 Tl 4p3 675.0 Xe 3d 724.0 Pt 4s 819.7 Te 3p3 915.9 Cr Auger 999.0 O Auger 1107.0 N Auger 1243.8 Pd Auger617.0 Cd 3p3 676.0 Th 4d5 724.8 Cs 3d5 826.0 In 3s 918.6 Cs Auger 1003.0 Nd 3d3 1108.0 Sm 3d3 1245.9 Tl Auger619.0 I 3d 676.7 In loss 724.8 Cs Cl 830.5 Co Auger 925.3 Co 2s 1003.6 Cr Auger 1109.8 Cd Auger 1249.0 Ge 2p1619.2 I 3d5 677.9 Tm Auger 724.9 Cs 2O:SiO2 833.0 Ce Auger 929.0 Rn 4p1 1004.8 Te 3s 1112.9 Sb Auger 1250.8 Pt Auger619.2 I KI 679.0 Bi 4p3 736.0 U 4d5 833.0 F Auger 930.9 I 3p1 1008.7 Ni 2s 1116.6 Ga 2p3 1259.8 Ru a623.2 Ni Auger 680.2 Hg 4p1 740.0 At 4p3 835.2 La 2O3 931.7 Cu Cl 1013.0 O Auger 1117.7 Sc Auger 1264.2 Mo Auger625.2 Re 4s 682.0 Sm Auger 740.0 Cs 3d3 836.0 La 3d5 931.8 Pr 3d5 1014.7 V Auger 1126.0 Eu 3d5 1265.0 Rh Auger626.1 Ho Auger 682.4 Xe 3d3 748.0 Ho Auger 836.5 Te loss 932.0 Cs Auger 1020.3 Te Auger 1128.0 La 3p3 1265.8 Ge loss626.4 V 2s 685.1 F CaF2 749.0 Cs loss 837.2 La B6 932.3 Cu S 1021.7 Zn O 1128.9 Ag Auger 1272.0 Ce 3p1627.8 Rh 3s 685.7 F 1s 756.2 Sn 3p1 837.9 Co Auger 932.4 Cu 2O 1021.8 Zn 2p3 1129.0 Sn Auger 1272.0 U 4p1628.2 Cu Auger 685.7 F LiF 758.0 Nd Auger 841.1 Gd Auger 932.6 Cu 2p3 1022.3 Zn S 1131.8 Te Auger 1275.7 Tb 3d3629.4 Ga Auger 688.9 F CF2 761.1 Pb 4p1 844.2 Cs Auger 932.9 Cu 2O 1022.5 Sb Auger 1135.0 Ag Auger 1296.2 Dy 3d5630.6 I 3d3 690.9 Ir 4s 761.2 Au 4s 846.0 Fe Auger 933.9 Cu O 1027.0 Pm 3d5 1137.0 Ba 3p1 1298.6 Mo Auger634.5 Er Auger 695.7 Cr 2s 761.8 Cs loss 846.7 Tl 4s 934.0 Xe 3p3 1027.2 Cr Auger 1141.0 Xe 3s 1303.3 Mg 1s635.0 Cu Auger 697.4 Co Auger 763.4 Gd Auger 851.0 Po 4p1 934.6 Cu (OH)2 1031.0 Zn loss 1143.4 Ga 2p1 1304.0 Cl Auger636.0 Ra 4d3 700.3 Tb Auger 766.4 Sb 3p3 851.6 Mn Auger 936.6 Bi 4s 1031.9 Sb Auger 1148.9 Sc Auger 1307.0 Hf Auger638.7 Mn 2p3 702.0 Ne Auger 768.0 Rn 4p3 852.6 Ni 2p3 940.7 Cu CT 1034.9 Ti Auger 1151.0 In Auger 1315.3 Mg loss640.4 Ni Auger 703.1 In 3p1 768.6 Mn 2s 852.9 Ni B 942.2 Cu CT 1042.0 At 4s 1153.0 Fr 4s 1316.1 Pt Auger640.5 Ga Auger 703.5 F loss 770.2 Sn loss 853.0 La 3d3 943.8 Cu CT 1043.0 U 4p3 1155.0 Eu 3d3 1318.0 Ta Auger640.9 Mn Mn3O4 705.0 Po 4p3 772.8 Cd 3s 853.8 Ni O 944.0 Sb 3s 1044.8 Zn 2p1 1159.4 Pd Auger 1319.0 Nb Auger641.0 Mn MnO 705.2 Ni Auger 777.7 Ni Auger 854.3 Ni Ntv Ox 944.1 Mn Auger 1049.6 Sn Auger 1170.0 Th 4p1 1321.6 Lu Auger641.0 Mn Mn2O3 706.7 Fe 2p3 778.3 Co 2p3 855.4 Ni (OH)2 945.5 Sb Auger 1052.0 Pm 3d3 1184.0 Ce 3p3 1322.3 Re Auger641.6 Mn MnO2 707.2 Fe S2 779.0 U 4d3 859.0 F Auger 952.2 Cu 2p1 1055.3 V Auger 1185.5 Rh Auger 1323.9 As 2p3642.4 Au 4p1 707.5 Ga Auger 779.2 Co O 863.0 Ne 1s 952.2 Pr 3d3 1055.5 Zn loss 1186.8 Gd 2O3 1324.5 Mo Auger643.5 I loss 709.8 Fe O 779.5 Co 3O4 869.9 Ni 2p1 952.5 Cs Auger 1058.0 Ra 4p1 1186.9 Gd 3d5 1326.3 Mg loss643.6 Pb 4p3 710.4 Fe 2O3-g 780.0 Ba 3d5 870.5 Cs Auger 959.5 Cr Auger 1058.0 Sn Auger 1190.0 Ag Auger 1334.0 Pt Auger645.0 Mn 2p 710.5 Fe 3O4 780.0 Ba CO3, OAc 870.7 Te 3p1 959.9 Te Auger 1063.0 Ba 3p3 1194.0 Ca Auger 1335.1 Dy 3d3647.5 Cu Auger 710.8 Fe 2O3-a 780.6 Co (OH)2 875.0 I 3p3 965.0 Th 4p3 1067.7 Ti Auger 1196.4 Zn 2s 1337.7 Zr Auger649.7 Mn 2p1 711.5 Fe OOH 780.9 Co Ntv Ox 878.1 F Auger 969.3 Te Auger 1071.8 Na 2O-SiO2 1208.0 Ra 4s 1352.9 Ho 3d5651.0 Cd 3p1 711.6 F loss 782.2 Sb loss 879.0 Ra 4p3 970.4 I Auger 1071.9 Na OH 1213.0 Pd Auger 1358.7 Er 3d5652.2 Zn Auger 712.2 Ni Auger 784.0 Fe Auger 882.0 Ce O2 976.8 V Auger 1072.0 I 3s 1217.0 Cs 3s 1359.5 As 2p1655.0 Eu Auger 713.0 Co Auger 793.7 Co 2p1 884.0 Ce 3d5 979.7 O Auger 1072.0 Na 1s 1217.0 Ge 2p3 1363.6 Yb Auger655.7 Ga Auger 713.0 Th 4d3 795.2 Ba 3d3 885.2 Sn 3s 980.0 Fr 4p1 1072.0 Na Cl 1217.0 Ru Auger 1365.5 Mo Auger657.2 I loss 714.1 In loss 797.0 Pr Auger 886.0 At 4p1 981.0 Nd 3d5 1076.4 In Auger 1219.6 Gd 3d3 1367.1 Tm Auger658.0 Os 4s 714.6 Sn 3p3 802.0 Ba loss 886.5 Ba Auger 981.8 I Auger 1081.0 Sm 3d5 1221.4 C Auger 1368.2 Zr Auger659.4 Zn Auger 715.1 Er Auger 803.6 Hg 4s 888.0 Fe Auger 994.6 Te Auger 1084.0 In Auger 1225.0 Ag Auger 1373.3 Tb 3p3665.2 In 3p3 719.5 Cu Auger 805.0 Bi 4p1 888.4 Te loss 995.0 Po 4s 1092.5 Te Auger 1234.7 Rh Auger 1378.9 Gd 3p3665.3 Ho Auger 719.6 Ag 3s 808.9 Tb Auger 891.7 Pb 4s 995.0 Sb Auger 1097.0 Rn 4s 1234.8 Ge loss 1390.9 Pb Auger669.7 Xe 3d5 719.9 Fe 2p1 810.0 Fr 4p3 898.0 Ba Auger 996.0 Xe 3p1 1097.2 Cu 2s 1235.0 K Auger 1392.6 Zr Auger671.5 Pd 3s 721.5 Tl 4p1 812.6 Sb 3p1 900.3 Mn Auger 997.3 Cr Auger 1102.8 Ti Auger 1242.0 Pr 3p3 1393.3 Ho 3d3

817.0 Ba loss 902.0 Ce 3d3 998.0 Cs 3p3 1103.1 Cd Auger 1242.1 Tb 3d5 1395.0 Si Auger

(c) 1999 XPS International, Inc. xxx Handbook of The Elements and Native Oxides