vvs esglsi designce.sharif.ir/courses/91-92/1/ce353-1/resources/root...topics pseudo-nmos gates....

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VLSI Design Lecture 9: MOS Logic Families Shaahin Shaahin Hessabi Hessabi Shaahin Shaahin Hessabi Hessabi Department of Computer Engineering Department of Computer Engineering Sharif University of Technology Sharif University of Technology Sharif University of Technology Sharif University of Technology Adapted with modifications from lecture notes prepared Adapted with modifications from lecture notes prepared by the by the book’s author book’s author (from Prentice Hall PTR) (from Prentice Hall PTR) Modern VLSI Design 4e: Chapter 3 Sharif University of Technology Slide 1 of 29

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Page 1: VVS esgLSI Designce.sharif.ir/courses/91-92/1/ce353-1/resources/root...Topics Pseudo-nMOS gates. DCVS logic. Domino gatesDomino gates. Design-for-yield. GIPGates as IP. Modern VLSI

VLSI DesignV S es gLecture 9: MOS Logic Familiesg

ShaahinShaahin HessabiHessabiShaahinShaahin HessabiHessabiDepartment of Computer EngineeringDepartment of Computer Engineering

Sharif University of TechnologySharif University of TechnologySharif University of TechnologySharif University of TechnologyAdapted with modifications from lecture notes prepared Adapted with modifications from lecture notes prepared by the by the

book’s author book’s author (from Prentice Hall PTR)(from Prentice Hall PTR)

Modern VLSI Design 4e: Chapter 3 Sharif University of Technology Slide 1 of 29

Page 2: VVS esgLSI Designce.sharif.ir/courses/91-92/1/ce353-1/resources/root...Topics Pseudo-nMOS gates. DCVS logic. Domino gatesDomino gates. Design-for-yield. GIPGates as IP. Modern VLSI

Topics

Pseudo-nMOS gates.DCVS logic.Domino gatesDomino gates.Design-for-yield.G IPGates as IP.

Modern VLSI Design 4e: Chapter 3 Sharif University of Technology Slide 2 of 29

Page 3: VVS esgLSI Designce.sharif.ir/courses/91-92/1/ce353-1/resources/root...Topics Pseudo-nMOS gates. DCVS logic. Domino gatesDomino gates. Design-for-yield. GIPGates as IP. Modern VLSI

Pseudo-NMOS

Uses a p-type transistor as a resistive pullup, n-type network for pulldowns.

Consumes static power.Has much smaller pullup network than static gate.gPulldown time is longer because pullup is fighting.pullup is fighting.

Modern VLSI Design 4e: Chapter 3 Sharif University of Technology Slide 3 of 29

Page 4: VVS esgLSI Designce.sharif.ir/courses/91-92/1/ce353-1/resources/root...Topics Pseudo-nMOS gates. DCVS logic. Domino gatesDomino gates. Design-for-yield. GIPGates as IP. Modern VLSI

Output voltages

Logic 1 output is always at VDD.g p y VDD

Logic 0 output is above Vss.VOL = 0.25 (VDD - VSS) is one plausible choice.VOL 0.25 (VDD VSS) is one plausible choice. Pull-down resistance ≤ (1/3 to 1/4 pull-up resistance)

Modern VLSI Design 4e: Chapter 3 Sharif University of Technology Slide 4 of 29

Page 5: VVS esgLSI Designce.sharif.ir/courses/91-92/1/ce353-1/resources/root...Topics Pseudo-nMOS gates. DCVS logic. Domino gatesDomino gates. Design-for-yield. GIPGates as IP. Modern VLSI

Producing output voltages

For logic 0 output, pullup and pulldown form a voltage divider.Must choose n/p transistor sizes to create effective presistances of the required ratio.Effective resistance of pulldown network must beEffective resistance of pulldown network must be comptued in worst case; series n-types means larger transistorstransistors.

Modern VLSI Design 4e: Chapter 3 Sharif University of Technology Slide 5 of 29

Page 6: VVS esgLSI Designce.sharif.ir/courses/91-92/1/ce353-1/resources/root...Topics Pseudo-nMOS gates. DCVS logic. Domino gatesDomino gates. Design-for-yield. GIPGates as IP. Modern VLSI

Transistor ratio calculation

For creating logic 0 output, (initially): pullup is in linear region,Vdsp = Vout - (VDD - VSS) ; pulldown is in saturation Vdsn = (VDD – VSS )Pullup and pulldown have same current flowing through them; i.e., - Idp = Idndp dn

For equal noise margins, using 0.5 m parameters, 3.3V power supply:3.3V power supply: (Wp/Lp) / (Wn/Ln) = 3.9

Modern VLSI Design 4e: Chapter 3 Sharif University of Technology Slide 6 of 29

Page 7: VVS esgLSI Designce.sharif.ir/courses/91-92/1/ce353-1/resources/root...Topics Pseudo-nMOS gates. DCVS logic. Domino gatesDomino gates. Design-for-yield. GIPGates as IP. Modern VLSI

DCVS logicg

DCVSL = differential cascode voltage switch logicDCVSL differential cascode voltage switch logic.Static logic.C i (lik d d CMOS)Consumes no static power (like standard CMOS)Uses latch to compute output quickly.Requires true/complement inputs, produces true/complement outputs.p p

Modern VLSI Design 4e: Chapter 3 Sharif University of Technology Slide 7 of 29

Page 8: VVS esgLSI Designce.sharif.ir/courses/91-92/1/ce353-1/resources/root...Topics Pseudo-nMOS gates. DCVS logic. Domino gatesDomino gates. Design-for-yield. GIPGates as IP. Modern VLSI

DCVS structure and operation

Exactly one of true/complement pulldown networks will complete a path to the power supply.Pulldown network will lower output voltage, turning on other p-type, g p yp ,which also turns off p-type for node which is going g gdown.

Modern VLSI Design 4e: Chapter 3 Sharif University of Technology Slide 8 of 29

Page 9: VVS esgLSI Designce.sharif.ir/courses/91-92/1/ce353-1/resources/root...Topics Pseudo-nMOS gates. DCVS logic. Domino gatesDomino gates. Design-for-yield. GIPGates as IP. Modern VLSI

DCVS Example

Modern VLSI Design 4e: Chapter 3 Sharif University of Technology Slide 9 of 29

Page 10: VVS esgLSI Designce.sharif.ir/courses/91-92/1/ce353-1/resources/root...Topics Pseudo-nMOS gates. DCVS logic. Domino gatesDomino gates. Design-for-yield. GIPGates as IP. Modern VLSI

Precharged logic

Precharged logic uses stored charge to help evaluation.Precharge node, selectively discharge it.g y gTake advantage of higher speed of n-types.Requires multiple phases for evaluationRequires multiple phases for evaluation.

Modern VLSI Design 4e: Chapter 3 Sharif University of Technology Slide 10 of 29

Page 11: VVS esgLSI Designce.sharif.ir/courses/91-92/1/ce353-1/resources/root...Topics Pseudo-nMOS gates. DCVS logic. Domino gatesDomino gates. Design-for-yield. GIPGates as IP. Modern VLSI

Domino logicg

Uses precharge clock to compute output in two phases:Uses precharge clock to compute output in two phases:

h precharge; evaluate.

Not a complete logic family; cannot invert.

Modern VLSI Design 4e: Chapter 3 Sharif University of Technology Slide 11 of 29

Page 12: VVS esgLSI Designce.sharif.ir/courses/91-92/1/ce353-1/resources/root...Topics Pseudo-nMOS gates. DCVS logic. Domino gatesDomino gates. Design-for-yield. GIPGates as IP. Modern VLSI

Domino phasespControlled by clock .Precharge:: p-type pullup precharges the storage node; inverter ensures that output goes low.Evaluate:: storage node may be pulled down, so output goes up.p g p

Modern VLSI Design 4e: Chapter 3 Sharif University of Technology Slide 12 of 29

Page 13: VVS esgLSI Designce.sharif.ir/courses/91-92/1/ce353-1/resources/root...Topics Pseudo-nMOS gates. DCVS logic. Domino gatesDomino gates. Design-for-yield. GIPGates as IP. Modern VLSI

Domino operation

Modern VLSI Design 4e: Chapter 3 Sharif University of Technology Slide 13 of 29

Page 14: VVS esgLSI Designce.sharif.ir/courses/91-92/1/ce353-1/resources/root...Topics Pseudo-nMOS gates. DCVS logic. Domino gatesDomino gates. Design-for-yield. GIPGates as IP. Modern VLSI

Domino effect

Gate outputs fall (rise) in sequence:

gate 1 gate 2 gate 3gate 1 gate 2 gate 3

Modern VLSI Design 4e: Chapter 3 Sharif University of Technology Slide 14 of 29

Page 15: VVS esgLSI Designce.sharif.ir/courses/91-92/1/ce353-1/resources/root...Topics Pseudo-nMOS gates. DCVS logic. Domino gatesDomino gates. Design-for-yield. GIPGates as IP. Modern VLSI

Monotonicity

Domino gates inputs must be monotonically g p yincreasing: glitch causes storage node to discharge.

Modern VLSI Design 4e: Chapter 3 Sharif University of Technology Slide 15 of 29

Page 16: VVS esgLSI Designce.sharif.ir/courses/91-92/1/ce353-1/resources/root...Topics Pseudo-nMOS gates. DCVS logic. Domino gatesDomino gates. Design-for-yield. GIPGates as IP. Modern VLSI

Output buffer

Output inverter is needed for two reasons:1. make sure that outputs start low, go high so that domino

output can be connected to another domino gate;» Can it be avoided by using an NMOS (controlled by ø)

in series with the pull-down (footed domino)? • (consider two cascaded gates)

2. protects storage node from outside influence.

Storage node and inverterStorage node and inverter have correlated values.

Modern VLSI Design 4e: Chapter 3 Sharif University of Technology Slide 16 of 29

Page 17: VVS esgLSI Designce.sharif.ir/courses/91-92/1/ce353-1/resources/root...Topics Pseudo-nMOS gates. DCVS logic. Domino gatesDomino gates. Design-for-yield. GIPGates as IP. Modern VLSI

Using domino logic

Can rewrite logic expression using DeMorgan’s Laws:g p g g (a + b)’ = a’b’ (ab)’ = a’ + b’ (ab) a b

Add inverters to network inputs/outputs as required.

Modern VLSI Design 4e: Chapter 3 Sharif University of Technology Slide 17 of 29

Page 18: VVS esgLSI Designce.sharif.ir/courses/91-92/1/ce353-1/resources/root...Topics Pseudo-nMOS gates. DCVS logic. Domino gatesDomino gates. Design-for-yield. GIPGates as IP. Modern VLSI

Charge-Storage Principle

Node X holds charge for “long” periodstH: time to bring node X from Vdd to 0.5 Vdd

Cx: dynamic node capacitance = Cox WLFor 0.25 micron technology:

tclk << tH for dynamic circuits to work.Future trends: Cx decreases; Vdd decreases; Ileakage increases. This implies tH decreases but so does tclk.

Modern VLSI Design 4e: Chapter 3 Sharif University of Technology Slide 18 of 29

Use a keeper transistor

Page 19: VVS esgLSI Designce.sharif.ir/courses/91-92/1/ce353-1/resources/root...Topics Pseudo-nMOS gates. DCVS logic. Domino gatesDomino gates. Design-for-yield. GIPGates as IP. Modern VLSI

Domino and stored charge

Charge can be stored in source/drain connections between pulldowns.Stored charge can be sufficient to affect prechargeg p gnode.Can be averted by precharging the internal pulldownCan be averted by precharging the internal pulldownnetwork nodes along with the precharge node.

Modern VLSI Design 4e: Chapter 3 Sharif University of Technology Slide 19 of 29

Page 20: VVS esgLSI Designce.sharif.ir/courses/91-92/1/ce353-1/resources/root...Topics Pseudo-nMOS gates. DCVS logic. Domino gatesDomino gates. Design-for-yield. GIPGates as IP. Modern VLSI

Charge-sharing

S l iSolution:– Make C1 >> C2

– Reduce Vt of the output inverter– Use a keeper/bleeder transistor– Use Multiple precharge transistors

Modern VLSI Design 4e: Chapter 3 Sharif University of Technology Slide 20 of 29

Page 21: VVS esgLSI Designce.sharif.ir/courses/91-92/1/ce353-1/resources/root...Topics Pseudo-nMOS gates. DCVS logic. Domino gatesDomino gates. Design-for-yield. GIPGates as IP. Modern VLSI

Dynamic logic vs. static logic

Faster Used in data-paths of high performance microprocessors.

Smaller areaSmaller area.Extra clock signal. C t Consumes extra power.

Dynamic power depends upon probability of logic l h h b bili f i ivalues rather than probability of a transition.

Susceptible to noise. Careful physical design required.

Modern VLSI Design 4e: Chapter 3 Sharif University of Technology Slide 21 of 29

Page 22: VVS esgLSI Designce.sharif.ir/courses/91-92/1/ce353-1/resources/root...Topics Pseudo-nMOS gates. DCVS logic. Domino gatesDomino gates. Design-for-yield. GIPGates as IP. Modern VLSI

Design-for-yield

Design processes that improve chip yield in very deep submicron/nanometer technologies.Must treat design and manufacturing as a unified g gprocessing to maximize yield in nanometer technologies.g

Modern VLSI Design 4e: Chapter 3 Sharif University of Technology Slide 22 of 29

Page 23: VVS esgLSI Designce.sharif.ir/courses/91-92/1/ce353-1/resources/root...Topics Pseudo-nMOS gates. DCVS logic. Domino gatesDomino gates. Design-for-yield. GIPGates as IP. Modern VLSI

Variations in manufacturing

Three types of variations:1. Systematic variations: can be predicted based on design and

mask information plus manufacturing equipment.2. Random variations: include variations in parameters, etc.3. Environmental variations: include temperature, etc.

Modern VLSI Design 4e: Chapter 3 Sharif University of Technology Slide 23 of 29

Page 24: VVS esgLSI Designce.sharif.ir/courses/91-92/1/ce353-1/resources/root...Topics Pseudo-nMOS gates. DCVS logic. Domino gatesDomino gates. Design-for-yield. GIPGates as IP. Modern VLSI

Trends in manufacturing

Larger variations in process and circuit parameters.Higher leakage currents.Patterning problems caused by specific combinations ofPatterning problems caused by specific combinations of geometric features.Metal width and thickness variationsMetal width and thickness variations.Stress in vias.

Modern VLSI Design 4e: Chapter 3 Sharif University of Technology Slide 24 of 29

Page 25: VVS esgLSI Designce.sharif.ir/courses/91-92/1/ce353-1/resources/root...Topics Pseudo-nMOS gates. DCVS logic. Domino gatesDomino gates. Design-for-yield. GIPGates as IP. Modern VLSI

Design-for-yield examples

Lithographic simulation to find yield problems not covered by standard design rules.Extra vias added to increase the reliability of yconnections.Statistical timing analysis to identify problems causedStatistical timing analysis to identify problems caused by variations in wiring.

Modern VLSI Design 4e: Chapter 3 Sharif University of Technology Slide 25 of 29

Page 26: VVS esgLSI Designce.sharif.ir/courses/91-92/1/ce353-1/resources/root...Topics Pseudo-nMOS gates. DCVS logic. Domino gatesDomino gates. Design-for-yield. GIPGates as IP. Modern VLSI

Gates as IP

The standard cell library was one of the first forms of IP. Reusable across many chips. Portable from one process to another.

Standard cell compatibility issues:S d d ce co p b y ssues: Layout: cell size, pin placement. Delay: driving specified load. Delay: driving specified load. Power consumption.

Modern VLSI Design 4e: Chapter 3 Sharif University of Technology Slide 26 of 29

Page 27: VVS esgLSI Designce.sharif.ir/courses/91-92/1/ce353-1/resources/root...Topics Pseudo-nMOS gates. DCVS logic. Domino gatesDomino gates. Design-for-yield. GIPGates as IP. Modern VLSI

Standard cell physical design

Basic cell organization is dictated by placement and routing system.All cells are the same height.g May be one of a set of standard widths.

Pins must be placed on routing grid usually determinedPins must be placed on routing grid, usually determined by wiring layers used.

Modern VLSI Design 4e: Chapter 3 Sharif University of Technology Slide 27 of 29

Page 28: VVS esgLSI Designce.sharif.ir/courses/91-92/1/ce353-1/resources/root...Topics Pseudo-nMOS gates. DCVS logic. Domino gatesDomino gates. Design-for-yield. GIPGates as IP. Modern VLSI

Standard cell logical design

Must support a Boolean complete set of functions.Should support enough gate types for good logic synthesis results.yNeed several electrical variations of each function: Low power Low power. High speed.

Modern VLSI Design 4e: Chapter 3 Sharif University of Technology Slide 28 of 29

Page 29: VVS esgLSI Designce.sharif.ir/courses/91-92/1/ce353-1/resources/root...Topics Pseudo-nMOS gates. DCVS logic. Domino gatesDomino gates. Design-for-yield. GIPGates as IP. Modern VLSI

Cell verification and qualification

Cells are verified by layout extraction and circuit simulation. Simulate a variety of process parameter combinations.

Qualification requires fabrication of cells on the target process.p

Modern VLSI Design 4e: Chapter 3 Sharif University of Technology Slide 29 of 29