[email protected] 7th int. meeting on front end electronics, montauk, may 2009 1...

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1 [email protected] 7th Int. Meeting on Front End Electronics, Montauk, May 2009 Wojciech Dulinski, IPHC Strasbourg Wojciech Dulinski, IPHC Strasbourg on behalf of: on behalf of: Gregory Bertolone, Gregory Bertolone, Andrei Dorokhov, Frederic Morel, Xiaomin Wei Andrei Dorokhov, Frederic Morel, Xiaomin Wei (Strasbourg), (Strasbourg), Yavuz Degerli (Saclay), Lodovico Ratti (Pavia) and Valerio Re Yavuz Degerli (Saclay), Lodovico Ratti (Pavia) and Valerio Re (Bergamo) (Bergamo) Ultra Thin, Fully Depleted MAPS based on 3D Integration of Heterogeneous CMOS Layers (3 Tiers) On the way towards fast, radiation tolerant and ultra thin CMOS sensors, we propose fully depleted epitaxial substrate with first stage buffer amplifier on the same wafer, capacitively coupled to the 3D readout electronics on top

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Page 1: Wojciech.Dulinski@ires.in2p3.fr 7th Int. Meeting on Front End Electronics, Montauk, May 2009 1 Wojciech Dulinski, IPHC Strasbourg on behalf of: Gregory

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[email protected]

7th Int. Meeting on Front End Electronics, Montauk, May 2009

Wojciech Dulinski, IPHC StrasbourgWojciech Dulinski, IPHC Strasbourg on behalf of:on behalf of:

Gregory Bertolone, Gregory Bertolone, Andrei Dorokhov, Frederic Morel, Xiaomin Wei (Strasbourg),Andrei Dorokhov, Frederic Morel, Xiaomin Wei (Strasbourg), Yavuz Degerli (Saclay), Lodovico Ratti (Pavia) and Valerio Re (Bergamo) Yavuz Degerli (Saclay), Lodovico Ratti (Pavia) and Valerio Re (Bergamo)

Ultra Thin, Fully Depleted MAPS based on 3D Integration of Heterogeneous CMOS Layers (3 Tiers)

On the way towards fast, radiation tolerant and ultra thin CMOS sensors, we propose fully depleted epitaxial substrate with first stage buffer amplifier on the same wafer, capacitively coupled to the 3D readout electronics on top

Page 2: Wojciech.Dulinski@ires.in2p3.fr 7th Int. Meeting on Front End Electronics, Montauk, May 2009 1 Wojciech Dulinski, IPHC Strasbourg on behalf of: Gregory

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[email protected]

7th Int. Meeting on Front End Electronics, Montauk, May 2009

Recipe: in addition to Tezzaron/Chartered 0.13 µm 2-tiers process from the 3D Consortium (Fermilab, IN2P3, INFN…)

use XFAB 0.6 PIN process

TSV

plus XFAB and Ziptronix(3 tiers)

From Chartered(2 tiers)

Bonding padsBonding pads

Bumps

Wafer view at intermediate and after final stage (chip-to-XFAB wafer bonding)

Page 3: Wojciech.Dulinski@ires.in2p3.fr 7th Int. Meeting on Front End Electronics, Montauk, May 2009 1 Wojciech Dulinski, IPHC Strasbourg on behalf of: Gregory

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[email protected]

7th Int. Meeting on Front End Electronics, Montauk, May 2009

Chartered Tier_1 (analog) and Tier_2 (digital)

XFAB 0.6µm PIN (Tier_0)Ziptronix

(Direct Bond Interconnect, DBI®)

Shaperlessfront-endtpeak ~1µs

Low offset, continuous

discriminator

Readout logic

Cd

~ 10 fF

Cc

>100 fF

If

>1 nAGx1

Cf

~10 fF off

<10 mV Dff

~ 40 µm2

Qmin

~ 200 el

1. Self Triggering Pixel Strip-like Tracker (STriPSeT)Collaboration: Strasbourg-Bergamo-Pavia

Tezzaron (metal-metal (Cu) thermocompression)

Page 4: Wojciech.Dulinski@ires.in2p3.fr 7th Int. Meeting on Front End Electronics, Montauk, May 2009 1 Wojciech Dulinski, IPHC Strasbourg on behalf of: Gregory

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[email protected]

7th Int. Meeting on Front End Electronics, Montauk, May 2009

Principal arguments for use of XFAB-0.6Principal arguments for use of XFAB-0.6- fully depleted, 14 µm thick epitaxy

- for small pitch, charge contained in less than two pixels

- fast charge collection (~5ns) should be radiation tolerant

- sufficient (rather good) S/N ratio defined by the first stage

- “charge amplification” ( >x10) by capacitive coupling to the second stage

- first experimental results from our first pixel sensor in this process (Mimosa25) very promising!

20x20 µm pixel layout in XFAB-06.Version: SF+CAPA (150 fF)

Page 5: Wojciech.Dulinski@ires.in2p3.fr 7th Int. Meeting on Front End Electronics, Montauk, May 2009 1 Wojciech Dulinski, IPHC Strasbourg on behalf of: Gregory

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[email protected]

7th Int. Meeting on Front End Electronics, Montauk, May 2009

Mimosa-25 prototypes (XFAB-0.6 PIN, Aug-Dec 2008)Mimosa-25 prototypes (XFAB-0.6 PIN, Aug-Dec 2008)

2 submitted chips

20um4x4 STD

20um4x4 um STD_TOX

20um5x6.5 STD

20um5x6.5 SB

20um5x6.5 umSB_TOX

20um5x6.5 umSTD_TOX

40um11.4x11.4 umPIN

30um4x4 STD

40um11.4x11.4umSTD

40um5x6.5 umSTD

30um5x6.5 SB

30um11.4x11.4PIN

Mimosa 25 A Mimosa 25 B

Page 6: Wojciech.Dulinski@ires.in2p3.fr 7th Int. Meeting on Front End Electronics, Montauk, May 2009 1 Wojciech Dulinski, IPHC Strasbourg on behalf of: Gregory

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[email protected]

7th Int. Meeting on Front End Electronics, Montauk, May 2009

To compare: « standard » (non-depleted epi substrate) before and after 1013 n/cm2

Landau MP (in electrons) versus cluster sizeLandau MP (in electrons) versus cluster size

Mimosa-25 on fully depleted epi substrate (XFAB): first tests results (Ru beta) Mimosa-25 on fully depleted epi substrate (XFAB): first tests results (Ru beta) 20 µm pitch, self-bias [email protected] before and after neutron irradiation20 µm pitch, self-bias [email protected] before and after neutron irradiation

Page 7: Wojciech.Dulinski@ires.in2p3.fr 7th Int. Meeting on Front End Electronics, Montauk, May 2009 1 Wojciech Dulinski, IPHC Strasbourg on behalf of: Gregory

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[email protected]

7th Int. Meeting on Front End Electronics, Montauk, May 2009

Mimosa-25 on fully depleted epi substrate : Ru beta spectrum (MIP Landau) Mimosa-25 on fully depleted epi substrate : Ru beta spectrum (MIP Landau) seen at the seed pixel, 20 µm pitch, self-bias [email protected] at the seed pixel, 20 µm pitch, self-bias [email protected]

160 e

Supposed threshold for ~100% efficiency

Page 8: Wojciech.Dulinski@ires.in2p3.fr 7th Int. Meeting on Front End Electronics, Montauk, May 2009 1 Wojciech Dulinski, IPHC Strasbourg on behalf of: Gregory

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[email protected]

7th Int. Meeting on Front End Electronics, Montauk, May 2009

Principal arguments for “shaperless front-end” (single Principal arguments for “shaperless front-end” (single stage, high gain, folded cascode based charge amplifier, stage, high gain, folded cascode based charge amplifier,

with a current source in the feedback loop)with a current source in the feedback loop)

- simple (surface efficient) but very satisfactory approach, in particular when minimum signal charge is of few thousand electrons (after “charge

amplification”)

- shaping time of ~1 µs very convenient: good time resolution, insensitivity to the irradiation induced leakage current

- possible implementation of Time-over-Threshold ADC in the future…

- minimum signal at the entrance of comparator few tens of mV, so threshold dispersions of few mV tolerable

- structure already studied in details by Pavia&Bergamo group (expertise from several prototypes in another 0.13 µm process): minimum risk for this first

3D-3T exercise!

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[email protected]

7th Int. Meeting on Front End Electronics, Montauk, May 2009

Combined simulation XFAB+Charterer (SF+ShaperlessFE)Combined simulation XFAB+Charterer (SF+ShaperlessFE)Two versions of SFE: CTwo versions of SFE: Cff=11 fF (MiM) and 5.5 fF (VPP)=11 fF (MiM) and 5.5 fF (VPP)

Simulation: pulse corresponding to 200 el

injected into XFAB diode

Results:

Peaking time ~400 ns

Gain: ~150µV/el (300 µV/el)ENC ~10 electrons!

Extra power from SF: <1µW/pixel

IF this is correct, we should expect:

S/NLandau>40

and

Cut99%eff/Noise>10

Page 10: Wojciech.Dulinski@ires.in2p3.fr 7th Int. Meeting on Front End Electronics, Montauk, May 2009 1 Wojciech Dulinski, IPHC Strasbourg on behalf of: Gregory

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[email protected]

7th Int. Meeting on Front End Electronics, Montauk, May 2009

Combined simulation XFAB+Charterer (SF+ShaperlessFE)Combined simulation XFAB+Charterer (SF+ShaperlessFE)

Linearity: 0-4000 electrons (step 100 e)

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[email protected]

7th Int. Meeting on Front End Electronics, Montauk, May 2009

Combined simulation XFAB+Charterer (SF+ShaperlessFE)Combined simulation XFAB+Charterer (SF+ShaperlessFE)

Comparator output : 0-4000 electrons (step 100 e); threshold ~150 e

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[email protected]

7th Int. Meeting on Front End Electronics, Montauk, May 2009

Combined simulation XFAB+Charterer (SF+ShaperlessFE)Combined simulation XFAB+Charterer (SF+ShaperlessFE)Time-walk of the comparator output : 0-4000 electrons (step 100 e); thresh ~150 e

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[email protected]

7th Int. Meeting on Front End Electronics, Montauk, May 2009

Input

SuperVias (Input and GND)

Self Triggering Pixel Strip-like Tracker: analog pixel (SFE) layout

Page 14: Wojciech.Dulinski@ires.in2p3.fr 7th Int. Meeting on Front End Electronics, Montauk, May 2009 1 Wojciech Dulinski, IPHC Strasbourg on behalf of: Gregory

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[email protected]

7th Int. Meeting on Front End Electronics, Montauk, May 2009

Principal arguments for “only digital” Tier_2Principal arguments for “only digital” Tier_2

- excellent separation of analog and digital (no common substrate, several metal layers for blinding…): no problems for asynchronous, random logic

- flexibility of the readout architecture, possible use of “front-line”, pure digital CMOS process (<60nm) for this layer to increase complexity of processing at

lower power budget

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[email protected]

7th Int. Meeting on Front End Electronics, Montauk, May 2009

STriPSeT: Data driven (self-triggering), sparsified binary readout.STriPSeT: Data driven (self-triggering), sparsified binary readout. X and Y projection of hit pixels pattern X and Y projection of hit pixels pattern

TrigOut Example:

readout clock : 160 MHz

2 output lines ≡ Array readout time: ~2µs

Programmable Active Area (through pixel disable SR)

Readout compatible with existing IPHC-digital DAQ…

SR

TrigIn

DELAY

SR Readout or Reset

SR: hot pixel disable register

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[email protected]

7th Int. Meeting on Front End Electronics, Montauk, May 2009

2. Rolling Shutter Mode MAPS: power efficient solution based on M26 approach for processing

Collaboration: IRFU-IPHC

In-pixel electronics

- Common threshold voltage- Only NMOS transistors in Tier 1- 20x20 µm pitch, 32x256 pixel array- Low power operation (rolling shutter)

Example of a power budget:-100 µW/pixel for 50ns processing-To be compared with 500µW/pixel for 200 ns processing (Mimosa26)-Factor of 20 saving in analog power! This is due to 3D electronics…

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[email protected]

7th Int. Meeting on Front End Electronics, Montauk, May 2009

Tier 1 Tier 2

Rolling Shutter Mode MAPS: analog and digital blocks. The analog is based on NMOS transistors only (from Yavuz Degerli)

Will be replaced by TSV (SuperContact) in case of 3-Tiers

latch

diode

20 µm

Amplifier chain

First stage amplifier

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[email protected]

7th Int. Meeting on Front End Electronics, Montauk, May 2009

Our contribution to 2009 3D-Consortium submission: one sub-Our contribution to 2009 3D-Consortium submission: one sub-reticle for 3-Tiers CMOS MAPS (plus one for 2-Tiers)reticle for 3-Tiers CMOS MAPS (plus one for 2-Tiers)

Bon

ding

pad

s

1.8x4 mm

Latchup-free

Memory (CMP)

3x5.5 mm

Small Pitch MAPS for ILC

(IPHC)

1.5x5.5 mm

Rolling-Shutter MAPS (IRFU)

2-Tiers (2xChartered)

3-Tiers (XFAB+2xChartered)

Bon

ding

pad

s

Bon

ding

pad

s

Self-Triggering Pixel Tracker (STriPSeT): 245x245 pixels,

20 µm pitch (Strasbourg-Bergamo-Pavia)

3D3T Test structures and seal rings

IRF

U-I

PH

C:

roll

ing-

shu

tter

, low

pow

er t

rack

er

(120

x2)x

(16+

16)

pix

els,

20x

20 (

20x1

0) µ

m p

itch

3D3T Test structures and seal rings

Bon

ding

pad

s

Page 19: Wojciech.Dulinski@ires.in2p3.fr 7th Int. Meeting on Front End Electronics, Montauk, May 2009 1 Wojciech Dulinski, IPHC Strasbourg on behalf of: Gregory

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[email protected]

7th Int. Meeting on Front End Electronics, Montauk, May 2009

3-Tiers CMOS MAPS status and expected schedule3-Tiers CMOS MAPS status and expected schedule- Submission (Chartered): ~May (done)

- Submission (XFAB): ~June/July (building blocks ready)

- Reception of wafers: ~August

- 2 Tiers testing: ~September

- XFAB Tier bonding (at Ziptronix): October

- Final tests (including beam tests): before the end of 2009?

Next steps:

1. Power optimization. In addition to STRipSeT and RSPix, a novel, high-gain (1-2 mV/el), low power (<1µW/pixel) test structure has been submitted

2. Thinning down to ~50 µm. Having such thin wafer, we may propose a new approach to solve yield problems in case of large area devices: built-in redundancy (2complete

layers) plus powering off of selected areas after in-situ self-tests

3. Looking for new applications!

Page 20: Wojciech.Dulinski@ires.in2p3.fr 7th Int. Meeting on Front End Electronics, Montauk, May 2009 1 Wojciech Dulinski, IPHC Strasbourg on behalf of: Gregory

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[email protected]

7th Int. Meeting on Front End Electronics, Montauk, May 2009

Example of application: STriPSeT for the beam telescopeExample of application: STriPSeT for the beam telescope

-Sensitive area: 5x5 sq.mm not very large, but fit well Mimosa18 (~1 µm precision tracker)

-Expected (binary) resolution: ~5 µm not very attractive

But:

-Time resolution of ~300 ns: can accept ~200 kHz particle rate (~106 hits/cm2s)

-Excellent noise performance: cut on S/N ratio of 10 should still be compatible with ~100% efficiency very low fake counting rate (+ hardware suppression of

hot pixels)

- Programmable pattern of active area

Good candidate for a (tracking) trigger layer!

Combination of tracking precision and multi-hit capabilities (Mimosa18) plus time resolution (STriPSeT) in one system

Page 21: Wojciech.Dulinski@ires.in2p3.fr 7th Int. Meeting on Front End Electronics, Montauk, May 2009 1 Wojciech Dulinski, IPHC Strasbourg on behalf of: Gregory

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[email protected]

7th Int. Meeting on Front End Electronics, Montauk, May 2009

Thanks for Thanks for your your

attention!attention!

My personal conclusion:

a new class of “monolithic” sensors is emerging (PixelCube ®?), but the 3-Tiers based architecture is at least 2000 year old!

Pont du Gard, Pont du Gard, southern Francesouthern France