wolfspeed ptma180402m v1 product and characteristics spec … · gate-source voltage vgs –0.5 to...

All published data at TCASE = 25°C unless otherwise indicated

ESD: Electrostatic discharge sensitive device—observe handling precautions!

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 10, 2018-05-19

RF Characteristics

CDMA Measurements (tested in Wolfspeed production test fixture)VDD = 28 V, IDQ1 = 160 mA, IDQ2 = 360 mA, POUT = 4 W average, ƒ = 1960 MHz, CDMA IS-95, 9 channels

Characteristic Symbol Min Typ Max Unit

Gain Gps 28 30 — dB

Drain Efficiency hD 14 16 — %

Adjacent Channel Power Ratio ACPR — –52 –50 dBc

RF Characteristics continued next page

Wideband RF LDMOS Integrated Power Amplifier40 W, 28 V, 1800 – 2100 MHz

Description

The PTMA180402M is a matched, wideband, 2-stage, 40-watt LDMOS integrated amplifier intended for base station applications in the 1800 to 2100 MHz frequency band. This device is offered in a 20-pin, thermally-enhanced, overmolded plastic package for cool and reliable operation.

PTMA180402M Package PG-DSO-20-63

Features

• Designed for wide RF bandwidth and low memory effects

• On-chip matching, integrated input DC block, 50-ohm input and ~4-ohm output

• Typical single-carrier CDMA performance at 1960 MHz, 28 V - Average output power = 5 W - Linear gain = 30 dB - Efficiency = 16% - Adjacent channel power = –52 dBc

• Typical two-tone CW performance at 1960 MHz, 28 V - Output power (PEP) = 40 W at IMD3 = –30 dBc - Efficiency = 34%

• Capable of handling 10:1 VSWR @ 28 V, 40 W (CW) output power

• Integrated ESD protection. Meets HBM Class 1B (minimum), per JESD22-A114F

• Thermally-enhanced, RoHS-compliant package

-25

-20

-15

-10

-5

0

5

10

14

18

22

26

30

34

1700 1800 1900 2000 2100 2200

Ret

urn

Loss

(dB

)

Gai

n(d

B)

Frequency (MHz)

Broadband PerformanceVDD = 28 V, IDQ1 = 160 mA, IDQ2 = 360 mA,

Fixture tuned for 1930 - 1990 MHz

Gain

Return Loss

PTMA180402M


2PTMA180402M

RF Characteristics (cont.)

Two-tone Specifications (not subject to production test—verified by design/characterization in Wolfspeed test fixture)VDD = 28 V, IDQ1 = 160 mA, IDQ2 = 360 mA, POUT = 40 W PEP, ƒ = 1960 MHz, tone spacing = 1 MHz

Characteristic Symbol Min Typ Max Unit

Gain Gps — 30 — dB

Power Added Efficiency PAE — 34 — %

Third Order Intermodulation Distortion IMD3 — –32 — dBc

DC Characteristics

Stage 1 Characteristics Conditions Symbol Min Typ Max Unit

Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 µA

VDS = 63 V, VGS = 0 V IDSS — — 10.0 µA

Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA

On-state Resistance Stage 1 VGS = 10 V, VDS = 0.1 V RDS(on) — 1.6 — Ω

Operating Gate Voltage VDS = 28 V, IDQ1 = 160 mA, VGS 2.0 2.5 3.0 V

Stage 2 Characteristics Conditions Symbol Min Typ Max Unit

Drain-source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V

Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 µA

VDS = 63 V, VGS = 0 V IDSS — — 10.0 µA

Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA

On-state Resistance Stage 2 VGS = 10 V, VDS = 0.1 V RDS(on) — 0.21 — Ω

Operating Gate Voltage VDS = 28 V, IDQ2 = 360 mA VGS 2.0 2.5 3.0 V


3PTMA180402M

Maximum Ratings

Parameter Symbol Value Unit

Drain-Source Voltage VDSS 65 V

Gate-Source Voltage VGS –0.5 to +12 V

Junction Temperature TJ 200 °C

Total Device Dissipation PD 175 W

Above 25°C derate by 1.0 W/°C

Storage Temperature Range TSTG –40 to +150 °C

Overall Thermal Resistance Stage 1, IDQ1 = 160 mA RqJC 3.6 °C/W(TCASE = 70°C, 40 W CW)

Stage 2, IDQ2 = 360 mA RqJC 1.5 °C/W

Moisture Sensitivity Level

Level Test Standard Package Temperature Unit

3 IPC/JEDEC J-STD-020 260 °C

Ordering Information

Type and Version Order Code Package and Description Shipping

PTMA180402M V1 R500 PTMA180402M-V1-R500 PG-DSO-20-63, molded plastic Tape & Reel, 500 pcs


4PTMA180402M

Typical Performance, circuit tuned for 2140 MHz (data taken in Wolfspeed test fixture)

25

35

45

55

-50

-40

-30

-20

ded

Effic

ienc

y (%

)

MD

3 (d

Bc)

Two-tone Drive UpVDD = 28 V, IDQ1 = 150 mA, IDQ2 = 400 mA,

ƒ = 2140 MHz, 1 MHz tone spacing

IM3L

5

15

25

-70

-60

50

29 31 33 35 37 39 41 43 45

Pow

er A

ddIM

Average Output Power (dBm)

IM3UPower Added Efficiency

-32

-22

-12

-2

8

18

28

10

14

18

22

26

30

34

1700 1900 2100 2300 2500

Inpu

tRet

urn

Loss

( dB

)

Gai

n(d

B)

Frequency (MHz)

Broadband SweepVDD = 28 V, IDQ1 = 150 mA, IDQ2 = 400 mA,

Fixture tuned for 2110 - 2170 MHz

Gain

IRL

5

15

25

35

45

55

65

10

14

18

22

26

30

34

30 32 34 36 38 40 42 44 46

Gai

n(d

B)

Output Power (dBm)

Power Sweep, P-1dBVDD = 28 V, IDQ1 = 150 mA, IDQ2 = 400 mA

2110 MHz2140 MHz2170 MHz

Gain

Pow

erA

dded

Eff

icie

ncy

(%)

Power AddedEfficiency

25

35

45

55

-50

-40

-30

-20

ed E

ffici

ency

(%)

MD

3 (d

Bc

Two-tone Drive UpVDD = 28 V, IDQ1 = 150 mA, IDQ2 = 400 mA,

1 MHz tone spacing

2110 MHz2140 MHz2170 MHz

5

15

25

-70

-60

-50

29 31 33 35 37 39 41 43 45

Pow

er A

ddI M

Average Output Power (dBm)

Power Added Efficiency

IMD

3 (d

Bc)

IMD3


5PTMA180402M

Broadband Circuit Impedance — 2140 MHz

Frequency Z Load Ω

MHz R jX

1900 5.76 –6.18

1920 5.63 –6.13

1940 5.51 –6.09

1960 5.39 –6.04

1980 5.27 –5.99

2000 5.15 –5.93

2020 5.03 –5.88

2040 4.92 –5.82

2060 4.80 –5.76

2080 4.68 –5.69

2100 4.57 –5.63

2120 4.45 –5.56

2140 4.34 –5.49

2160 4.23 –5.41

2180 4.12 –5.34

2200 4.01 –5.26

Z LoadD

S

IN

0.1

0.3

0.5

0.2

0.4

0.1

0.3

0.5

0.7

0.9

0.2

0.4

0.6

0.8

0.1

0.3

0.5

0.7

0.9

0.2

0.4

0.6

0.8

1

-WA

VE

LEN

GTH

STO

WA

RDG

ENER

ATO

R---

>

0.05

0.40

0.45

0.05

0.10

0.45

<---

WA

VELE

NG

THS

TOW

AR

DLO

AD

- 0.0

Nornalized to 50 Ohms

a180402m-2140 MHz

2200 MHz1900 MHz

da180402m2140 Sept. 20, 2009 8:20:58 PM

Z Load

Z0 = 50 Ω


6PTMA180402M

Reference Circuit, tuned for 2140 MHz

Reference circuit schematic for ƒ = 2140 MHz

Circuit Description DUT PTMA180402M, LDMOS IC

PCB Rogers RO4350, 0.76 mm [.030"] thick, er = 3.48, 1 oz. copper Test fixture part no. LTN/PTMA180402M-21Find Gerber files for this test fixture on the Wolfspeed Web site at (www.wolfspeed.com/RF)

Circuit Assembly Information

Microstrip Electrical Characteristics Dimensions: L x W (mm) Dimensions: L x W (in.)

at 2140 MHzl1 0.150 λ, 50.0 Ω 12.73 x 1.70 0.501 x 0.067

l2 0.177 λ, 50.0 Ω 15.04 x 1.70 0.592 x 0.067

l3 0.026 λ, 10.4 Ω 2.01 x 13.00 0.079 x 0.512

l4 0.026 λ, 10.4 Ω 2.06 x 13.00 0.081 x 0.512

l5 0.026 λ, 34.2 Ω 2.13 x 3.00 0.084 x 0.118

l6 0.054 λ, 34.2 Ω 4.45 x 3.00 0.175 x 0.118

l7 0.066 λ, 43.5 Ω 5.56 x 2.11 0.219 x 0.083

l8 0.178 λ, 43.5 Ω 14.96 x 2.11 0.589 x 0.083

l9 0.059 λ, 50.0 Ω 5.03 x 1.70 0.198 x 0.067

l10, l11 0.137 λ, 47.8 Ω 11.56 x 1.83 0.455 x 0.072

C1100µF 50V

R20O

C1110µF

Q2

G1

G2V

R4

R10O

R3

V

C710µF

Q1

VD1

C1810µF

C160.1µF

C1512pF

C171µF

C130.1µF

C121µF

C1412pF

C512pF

1

C90.1µF

C81µF

C1012pF

J1

C31µF

C210µF

C40.1µF

183

PTMA180402M

10

89

7

4

65

11121314151617

21

DUT

1920

9

C29100µF 50V

C271µF

C2512pF

C260.1µF

C2810µF

C19100µF 50V

C2012pF

C301.8pF

4

C311.8pF

D1V

3

11

5

10

C322.4pF

6 7

C331.2pF

8

C3412pF

C210.1µF

C221µF

C2310µF

J2

VD2

C24100µF 50V

2

C6.5pF

M A 1 8 0 4 0 2 m _ 2 1 4 0 M H z _ B D _ 9 - 2 - 0 9

RF_IN RF_OUT


7PTMA180402M

Reference Circuit — 2140 MHz (cont.)

Assembly diagram for 2140 MHz reference circuit (not to scale)

Component Description Manufacturer P/N or CommentC1, C19, C24, C29 Electrolytic capacitor, 100 µF, 50 V Panasonic Electronic Components EEV-FK1H101GPC2, C7, C11, C18, Ceramic capacitor, 10 µF Murata GRM422Y5V106Z050AL C23, C28C3, C8, C12, C17, Ceramic capacitor, 1 µF TDK Corporation C4532X7R2A105M230KA C22, C27C4, C9, C13, C16, Capacitor, 0.1 µF Kemet C1210C104K5RACTU C21, C26 C5, C10, C12, C15, Ceramic capacitor, 12 pF ATC 600S120JT C20, C25, C34C6 Ceramic capacitor, 0.5 pF ATC 100B 0R5C30, C31 Ceramic capacitor, 1.8 pF ATC 600S1R8CTC32 Ceramic capacitor, 2.4 pF ATC 100B 2R4C33 Ceramic capacitor, 1.2 pF ATC 100B 1R2Q1, Q2 Transistor Infineon Technologies BCP56R1, R2 Resistor, 0 Ω Panasonic Electronic Components ERJ-3GEY0R00VR3, R4 Potentiometer, 2k Ω Bourns, Inc. 3224W-1-202E

C6

C33

R1

R2

C24C23C22

C21

C20

C29

C28C27

C26

C25

C32 C34C31

C30

C1C2

C3

C4C5

C19

C15

C16C17C18

C7

C8C9 C13

C14C10

C11C12

M A 1 8 0 4 0 2 m _ 2 1 4 0 M H z _ C D _ 9 - 2 - 0 9

VG2

VD1

VG

1

VD2

VD2VD1

RF_IN RF_OUT

R3R4

Q2Q1

PTMA180402M_02A


8PTMA180402M

Typical Performance, circuit tuned for 1960 MHz (data taken in a production test fixture)

0

10

20

30

40

50

60

26

27

28

29

30

31

32

30 32 34 36 38 40 42 44 46 48

Gai

n(d

B)

Output Power (dBm)

CW Power PerformanceVDD = 28 V, IDQ1 = 130 mA, IDQ2 = 360 mA,

ƒ = 1930, 1960, 1990 MHz

1930 MHz

1960 MHz

1990 MHz

Gain

Pow

erA

dded

Eff

ici e

ncy

(%)

Efficiency

26

27

28

29

30

31

32

30 32 34 36 38 40 42 44 46

Gai

n(d

B)

Output Power (dBm)

CW Performance atSelected Drain Voltage

VDD = 24 V, 28 V, 32 VIDQ1 = 130 mA, IDQ2 = 360 mA, ƒ = 1960 MHz

24 V

32 V

28 V

-60

-50

-40

-30

-20

-10

0

10

20

30

40

50

30 32 34 36 38 40 42 44 46

IMD

3(d

Bc)

Average Output Power ( dBm )

Two-tone Drive-upVDD = 28 V, IDQ1 = 160 mA, IDQ2 = 360 mA

ƒ = 1930, 1960, 1990 MHz

1930 MHz

1960 MHz

1990 MHzEfficiency

IMD3Pow

erA

dded

Eff

icie

ncy

(%)

0

5

10

15

20

25

30

-65

-60

-55

-50

-45

-40

-35

29 31 33 35 37 39 41

Pow

erA

dded

Eff

icie

ncy

(%)

Output Power (dBm)

CDMA IS-95 Drive-up, 3 FrequenciesVDD = 28 V, IDQ1 = 160, IDQ2 = 360 mA,

ƒ = 1930, 1960, 1990 MHz

1930 MHz

1960 MHz

1990 MHz

Adj

acen

tCha

nnel

Pow

erR

atio

(dB

)

Efficiency

ACPR

Power AddedEfficiency

Power AddedEfficiencyPower Added

Efficiency


9PTMA180402M

Typical Performance —1960 MHz (cont.)

Edge Modulation PerformanceVDD = 28 V, IDQ1 = 160 mA, IDQ2 = 360 mA

ƒ = 1930 1960 1990 MHz

-5040

ƒ = 1930, 1960, 1990 MHz

c)

-60

-55

30

35

400 kHz

1930 MHz1960 MHz1990 MHz

ctru

m (d

B

ency

(%)

-70

-65

20

25

atio

n Sp

ec

ded

Effic

ie

-80

-75

10

15

600 kHz ge M

odul

a

Pow

er A

dd

Power Added Efficiency

-85

80

5

10

30 32 34 36 38 40 42 44

EdgP

Output Power ( dBm )

-40

-35

-30

-25

-20

15

20

25

30

35

M3

(dBc

)

Two-carrier WCDMA Drive-up VDD = 28 V, IDQ1 = 160 mA, IDQ2 = 360 mA,

ƒ = 1930, 1960, 1990 MHz, PAR = 8 dB, 10 MHz spacing, 3.84 MHz bandwidth

1930 MHz1960 MHz1990 MHz

dded

Effi

cien

cy (%

) Power Added Efficiency

-50

-45

40

5

10

15

30 32 34 36 38 40 42

I


IM3Pow

er A

d

Edge EVM PerformanceVDD = 28 V, IDQ1 = 160 mA, IDQ2 = 360 mA

ƒ = 1930 1960 1990 MHz

3.540

ƒ 1930, 1960, 1990 MHz

2.5

3.0

30

35

de (%

)

ncy

(%)

1930 MHz1960 MHz1990 MHz

1.5

2.0

20

25

r Mag

nitu

d

ed E

ffici

en

Power Added

0 5

1.0

10

15

ror V

ecto

rEVM

ower

Add

e Efficiency

0.0

0.5

5

10

30 32 34 36 38 40 42 44

Err

Po


-35

-30

-25

-20

20

25

30

35

M3

(dBc

)

Two-carrier WCDMA at Selected Temperatures

VDD = 28 V, IDQ1 = 160 mA, IDQ2 = 360 mA, ƒ = 1960 MHz, PAR = 8 dB, 10 MHz spacing,

3.84 MHz bandwidth

25°C90°C

–25°C Power Added Efficiency

dded

Effi

cien

cy (%

)

-50

-45

-40

5

10

15

30 32 34 36 38 40 42

IM


IM3Pow

er A

d


10PTMA180402M

Broadband Circuit Impedance — 1960 MHz

Z LoadD

S

IN

Frequency Z Load Ω

MHz R jX

1800 5.56 –6.95

1810 5.48 –6.91

1820 5.39 –6.87

1830 5.31 –6.83

1840 5.23 –6.79

1850 5.15 –6.75

1860 5.07 –6.70

1870 4.99 –6.66

1880 4.91 –6.61

1890 4.84 –6.56

1900 4.76 –6.51

1910 4.69 –6.47

1920 4.61 –6.42

1930 4.54 –6.36

1940 4.47 –6.31

1950 4.40 –6.26

1960 4.33 –6.21

1970 4.26 –6.15

1980 4.19 –6.10

1990 4.12 –6.04

2000 4.06 –5.99

0.1

0.3

0.5

0.2

0.4

0.1

0.3

0.5

0.7

0.9

0.2

0.4

0.6

0.8

0.1

0.30.

5

0.7

0.9

0.2

0.40.

6

0.8

1

-WA

VE

LEN

GTH

STO

WA

RDG

ENER

ATO

R---

>

0.05

0.40

0.45

0.05

0.10

0.45

<---

WA

VELE

NG

THS

TOW

AR

DLO

AD

- 0.0

Nornalized to 50 Ohms

a180402m-1900 MHz

2200 MHz 1800 MHz

da180402m1900 Sept. 20, 2009 8:34:45 PM

Z Load

Z0 = 50 Ω


11PTMA180402M

Reference Circuit, tuned for 1960 MHz

Reference circuit schematic for ƒ = 1960 MHz

Circuit Description

DUT PTMA180402M, LDMOS IC

PCB Rogers RO4350, 0.76 mm [.030"] thick, er = 3.48, 1 oz. copper Test Fixture Part No. LTN/PTMA180402MFind Gerber files for this test fixture on the Wolfspeed Web site at (www.wolfspeed.com/RF)

Microstrip Electrical Characteristics Dimensions: L x W (mm) Dimensions: L x W (in.)

at 1960 MHzl1 0.300 λ,50.0 Ω 27.76 x 1.70 1.093 x 0.067

l2 0.024 λ,10.4 Ω 2.01 x 13.00 0.079 x 0.512

l3 0.024 λ,10.4 Ω 2.06 x 13.00 0.081 x 0.512

l4 0.037 λ,34.2 Ω 3.35 x 3.00 0.132 x 0.118

l5 0.046 λ,34.2 Ω 4.11 x 3.00 0.162 x 0.118

l6 0.097 λ,34.2 Ω 8.76 x 3.00 0.345 x 0.118

l7 0.127 λ,43.6 Ω 11.63 x 2.11 0.458 x 0.083

l8 0.054 λ,50.0 Ω 5.03 x 1.70 0.198 x 0.067

l9, l10 0.125 λ,47.8 Ω 11.56 x 1.83 0.455 x 0.072

C71µF

C912pF

C80.1µF

C610µF

C1312pF

G2V

C111µF

C1010µF

C120.1µF

C161µF

C1412pF

C150.1µF

C18100µF 50V

C1710µF

D1V

VD1

G1V

J1

C1100µF 50V

C210µF

C31µF

DUT

PTMA180402M

3

1

7

910

8

56

4

C40.1µF

C512pF

12

C291.8pF

18

14131211

171615

C301.8pF

2 3

2019

C2710µF

C250.1µF

C2412pF

10

C261µF

C28100µF 50V

VD2

C3312pF

5

C312.7pF

4 7

9

C1912pF

C200.1µF

C211µF

8 J2

C23100µF 50V

C2210µF

R10O

R20O

R4

R3

Q2

Q1

6

C321pF

M A 1 8 0 4 0 2 m _ 1 9 6 0 M H z _ B D _ 9 - 2 - 0 9

RF_IN RF_OUT


12PTMA180402M

Reference Circuit — 1960 MHz (cont.)

Assembly diagram for 1960 MHz reference circuit (not to scale)

Component Description Manufacturer P/N or CommentC1, C18, C23, C28 Electrolytic capacitor, 100 µF, 50 V Panasonic Electronic Components EEV-FK1H101GP

C2, C6, C10, C17, Ceramic capacitor, 10 µF Murata GRM422Y5V106Z050AL C22, C27C3, C7, C11, C16, Ceramic capacitor, 1 µF TDK Corporation C4532X7R2A105M230KA C21, C26C4, C8, C12, C15, Capacitor, 0.1 µF Kemet C1210C104K5RACTU C20, C25 C5, C9, C13, C14, Ceramic capacitor, 12 pF ATC 600S120JT C19, C24, C33C29, C30, C31 Ceramic capacitor, 1.8 pF ATC 600S1R8CTC32 Ceramic capacitor, 1.0 pF ATC 100B 1R0Q1, Q2 Transistor Infineon Technologies BCP56R1, R2 Resistor, 0 Ω Panasonic Electronic Components ERJ-3GEY0R00VR3, R4 Potentiometer, 2k Ω Bourns, Inc. 3224W-1-202E

C32

C23C22C21

C20

C19

C28

C27C26

C25

C24

C31 C33C30

C29

C1C2

C3C4

C5

C18

C14

C15C16

C17

C6

C7C8 C12

C13C9

C10C11

R1

M A 1 8 0 4 0 2 m _ 1 9 6 0 M H z _ C D _ 9 - 2 - 0 9

R4R2

Q2Q1

R3VG1

VG2

VD2

VD1

VD1 VD2

RF_IN RF_OUT

PTMA180402M_02A


13PTMA180402M

Pinout Diagram

1

2

3

4

5

6

7

8

9

10

20

19

18

17

16

15

14

13

12

11

Thermal FET

a 1 8 0 4 0 2 m _ p d _ 9 - 3 - 2 0 0 9

VD2, RF Out

VD2, RF Out

VD2, RF Out

VD2, RF Out

VD2, RF Out

VD2, RF Out

NC

NC

NC

NC

RF In

RF In

VG Thermal FET

VD Thermal FET

VD1

VD1

VD1

VD1

VG1

VG2

Source: plated copper heat slug on backside of package


14PTMA180402M

Package Outline Specifications

Package PG-DSO-20-63

Diagram Notes—unless otherwise specified:1. Interpret dimensions and tolerances per ASME Y14.5M-1994.

2. Package dimensions: 11.0 mm by 15.9 mm by 3.35 mm.

3. JEDEC drawing number: MO-166.

4. Does not include plastic or metal protrusion of 0.15 mm max per side.

5. Does not include dambar protrusion; maximum allowable dambar protrusion shall be 0.08 mm.

6. Bottom metallization. Sn plating (matte): 5 – 15 micron [196.85 – 590.55 microinch].

2X 2.90 [0.114] MAX

(2 PLS)

13.00 [0.512] MAX

110

11 20

6.

INDEX PIN 1

6.

14.20±0.30

11.00 [0.433]

9 X 1.27 = 11.439 X .050 = .450 1.10

[0.043] MAX (2 PLS)

2.95 [0.116]

6.00 [0.236]

TOP VIEW

BOTTOM VIEW

[0.559±0.012]

0.40+0.13[0.015+0.005]

0.25mm C A B

15.90±0.10 [0.626±0.004]

1.27 [0.050]

14°±1° (2 PLS)TOP/BOTTOM

ALL SIDES

11.00±0.10 [0.433±0.004]

5.

3.50 [0.137] MAX

SEE DETAIL A4.

SIDE VIEW

END VIEW

M S S

0.95±0.15 [0.037±0.006]

0.35 [0.014]GAUGE PLANE

0.15 [0.006] REF

0+0.1[0+0.004]

STANDOFF 1.60 [0.063] REF

0.25+0.07–0.02

[0.010 ]+0.003–0.001

DETAIL A

PG-DSO-20-63_ po_01_12-07-2012

Diagram Notes–unless otherwise specified:

1. Interpret dimensions and tolerances per ASME Y14.5M-1994.

2. Package dimensions: 11.0 mm by 15.9 mm by 3.35 mm.

3. JEDEC drawing number : MO-166.

4. Does not include plastic or metal protrusion of 0.15 mm max per side.

5. Does not include dambar protrusion; maximum allowable dambar protrusion shall be 0.08 mm.

6. Bottom metallization.

7. Sn plating (matte) : 5 - 15 micron [196.85 – 590.55 microinch].

www.wolfspeed.comRev. 10, 2018-05-19

Notes

Disclaimer

Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or pat-ent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility.

Copyright © 2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Wolfspeed™ and the Wolfspeed logo are trademarks of Cree, Inc.

For more information, please contact:

4600 Silicon DriveDurham, North Carolina, USA 27703www.wolfspeed.com/RF

Sales Contact [email protected]

RF Product Marketing Contact [email protected] 919.407.7816

15PTMA180402M

01 2008-12-23 Production all First information about this product

02 2009-01-22 Production 10 Revised pinout diagram

03 2009-03-03 Production 9 Package outline updated

04 2009-07-28 Production 1 Frequencies of operation changed.

05 2009-10-13 Production 3-12 Added 2100 MHz information and revised 1900 MHz characterization and circuit information

06 2010-04-16 Production 3, 14 Moisture sensitivity level table added; package outline notes updated

07 2010-11-02 Production 5, 11 Recalculate electrical characteristics

07.1 2011-03-17 Production 9, 11 Removed graph; corrected typo

08 2011-08-10 Production 1-2 Updates to and clarification for RF and DC tables.

09 2014-05-27 Production 3 Shipping option added.

10 2018-05-19 Production All Converted to Wolfspeed Data Sheet

Revision History

wolfspeed ptma180402m v1 product and characteristics spec … · gate-source voltage vgs –0.5 to...

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