x-ray absorption spectroscopy-part 2lgonchar/courses/p9826/x-ray absorption... · • xanes/nexafs...
TRANSCRIPT
1
Part II
• XAFS: Principles
• XANES/NEXAFS
• Applications
2
X-ray Absorption Spectroscopy (XAS)
X-ray Absorption spectroscopy is often referred to as
- NEXAFS for low Z elements (C, N, O, F, etc. K-edge, Si, P, S, L-edges) or
- XAFS (XANES and EXAFS)
for intermediate Z and high Z elements.
3
NEXAFS, XANES and EXAFS
• NEXAFS (Near Edge X-ray Absorption Fine Structures) describes the absorption features in the vicinity of an absorption edge up to ~ 50 eV above the edge (for low Z elements for historical reasons).
• It is exactly the same as XANES ( X-ray Absorption Near Edge Structures), which is often used together with EXAFS (Extended X-ray Absorption Fine Structures) to describe the modulation of the absorption coefficient of an element in a chemical environment from below the edge to ~ 50 eV above (XANES), then to as much as 1000 eV above the threshold (EXAFS)
• NEXAFS and XANES are often used interchangeably• XAFS and XAS are also often used interchangeably
4
XAFS of free atom
• In rare gases, the pre-edge region exhibits a series of sharp peaks arising from bound to bound transitions (dipole: 1sto npetc.) called Rydberg transitions
5
XAFS of small molecules
• Small molecules exhibit transitions to LUMO, LUMO + and virtual orbital, MO in the continuum trapped by a potential barrier (centrifugal potential barrier set up by high angular momentum states and the presence of neighboring atoms), or sometimes known as multiple scattering states
6
XAFS: the physical process
Dipole transition between quantum states• core to bound states (Rydberg, MO below vacuum level,-ve energy, the excited electron remains in the vicinity of the atom)- long life time-sharp peaks• core to quasi-bound state (+ve energy, virtual MO, multiple scattering states, shape resonance, etc.); these are the states trapped in a potential barrier, and the electron willeventually tunnel out of the barrier into the continuum-short lifetime, broad peaks• core to continuum (electron with sufficient kinetic energy to escape into the continuum) - photoelectric effect.XPS &EXAFS
7
XAFS: the physical process cont’
Scattering of photoelectron by the molecular potential– how the electron is scattered depends on its kinetic energy
• Low kinetic energy electrons - Multiple scattering (typically up to ~ 50 eV above the threshold, the region where bound to quasi-bound transitions take place); e is scattered primarily by valence and shallow inner shell electrons of the neighboring atoms -XANES region•High kinetic energy electrons (50 -1000 eV) are scattered primarily by the core electrons of the neighboring atoms, single scattering pathway dominates - EXAFS region
8
Electron scattering
• Free electron (plane wave) scattered by an atom (spherical potential) travels away as a spherical wave
• Electrons with kinetic energy > 0 in a molecular environment is scattered be the surrounding atoms
• Low KE e- is scattered by valence electrons, undergoes multiple scattering in a molecular environment
• High KE e- is scattered by core electrons, favors single scattering
Multiple Scattering
Single Back-scattering
9
10
11
Asymptotic wing of the coulomb potential supports the Rydberg states
States trapped in the potential barrier are virtual MO’s or multiple scattering states (quasi bound states)
bound states
free e with KE >0
Free atom
diatomic with unsaturated bondingN2, NO, CO etc.
NEXAFS of free atom & unsaturated diatomic molecules
π*
12
NEXAFS of Free Atom: Ar L3,2-edge
244 245 246 247 248 249 250 251
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
244.00 244.25 244.50 244.75
Rel
ativ
e In
tens
ity
Photon Energy (eV)
123meV
2p3/2
- 4s
2p1/2
- 4s
3d
4d
5d
6d
3d
5d6d
4d
Photon Energy
Ar (gas)[Ne]3s23p6
2p6 →2p54s1
2p1/2
2p3/2(lower binding)
j = l ±s
2p14s1Core hole
Hund’s rule
hv
13
Rydberg transitions in HBr remain strong and a broad transition to molecular orbital emerges
HBrKr
NEXAFS of atom and small molecules
M5,4 (3d5/2,3/2)M5,4 (3d5/2,3/2)
MO
14
Inte
nsity
(ar
b. u
nits
)
402.0401.5401.0400.5400.0Photon Energy (eV)
Vibronic structures in the 1 s to π* transition
N2
1s -π*
IP
π*
σ*
NEXAFS of Nitrogen
15
C 1s C 1s
π*
π*σ*
Molecular orbital illustrationC2H2CON2 MO axis
16
17
∆E = (Eσ*-Eo) ∝ 1/r
Why would this correlation exist?i) Multiple scattering theoryii) Simple picture- particle in a box-
the shorter the bond the farther the energy separation
iii) Scattering amplitude ∝ Z
18
19
NEXAFS of molecules oriented on a surface(angular dependence of resonance intensity)
When molecules adsorb on a surface, their molecular axis is defined by the axis of the substrate. Therefore, angle dependent experiments can be made by rotating the substrate with respect to the polarization of the photon beam. Using selection rules, the orientation of the molecule on a surface can be determined.
H HC=C
H H
C-C
20
Carbon Allotropes
Diamond
Graphite
Graphene
Nanotube
Hexagonal Diamond(Lonsdaleite)
21
core
LUMO
LUMO + 1
XANES of Benzene
22
ππππ*1 C-H* ππππ*2
XANES systematic
Tom Regier unpublished
Incr
easi
ng n
o. o
f ben
zene
rin
gs
23
Chemical systematic
CNT
C60
24
25
d - electron in transition metals
The dipole selection rule allows for the probing of the unoccupieddensities of states (DOS) of dcharacter from the 2p and 3p levels –M3,2 and L3,2-edge XANES analysis(relevance: catalysis)
26
Transition metal systematic
3d 4d 5dFilling of the d band across the period
Dec
rea
sin
g w
hite
line
inte
nsi
ty a
cros
s th
e p
erio
d a
s th
e d
ba
nd g
ets
fille
d
27
L3,2/M3,2 Whiteline and unoccupied densities of d states
• 3d metal: the L-edge WL for early 3d metals is most complex due to the proximity of the L3,L2 edges as well as crystal field effect; the 3d spin-orbit is negligible
• 4d metals: the L3,L2 edges are further apart, WL intensity is a good measure of 4d hole population
• 5 d metals: The L3 and L2 are well separated but the spin orbit splitting of the 5d orbital becomes important, j is a better quantum number than l, WL intensity is a good measure of d5/3 and d3/2 hole populations
28
3d metals
Hsieh et al Phys. Rev. B 57, 15204 (1998)
29
d- band filling across 5d row
5d metal d band
Ta
W
Pt
Au
Intensity (area under the curve) of the sharp peak at threshold (white line) probes the DOS
EFermi
T.K. Sham et al. J. Appl. Phys. 79, 7134(1996)
3p3/2-5d2p3/2-5d
30
d - charge redistribution in 4d metals
Ag →Pd 4d charge transfer upon alloying
I. Coulthard and T.K. Sham, Phys. Rev. Lett., 77, 4824(1996)
31
Analysis of d hole in Au and Pt metal In 5 d metals with a nearly filled/full d bandsuch as Pt and Au, respectively, spin orbit coupling is large so d5/2 and d3/2 holes population is not the same
Selection rule: dipole, ∆l = ± 1, ∆j = ± 1, 0
L3, 2p3/2 → 5d5/2.3/2
L2, 2p1/2 → 5d3/2
Pt5d3/2
5d5/2
DOS
EF
T.K. Sham et al. J. Appl. Phys. 79, 7134(1996)
32
Au L32p3/2 - 5d 5/2,3/2
Au L22p1/2 - 5d3/2
M. Kuhn and T.K. Sham Phys. Rev. 49, 1647 (1994)
33
*
* Phys. Rev. B22, 1663 (1980)
34
Probing depth profile with Probing depth profile with light: applications
Morphology Structure
Electronicproperties
0.1-1 nm
nm-10 nm
10-103 nm
surface
near surface
bulk-like
hard x-ray
soft x-ray
Interface
X-ray probes:
(photon)photon
Light-matter Interaction:Absorption & Scattering
e ion
35
Soft X-ray vs. hard X-ray
Soft x-ray usually cannot penetrate the entire sample → measurements cannot be made in the transmission mode.Yield spectroscopy is normally used !
One absorption length (µt1 = 1 or t1 = 1/ µ) is a goodmeasure of the penetration depth of the photon
Example of one absorption lengths
Element density(g/cm3) hv(eV) mass abs (cm2/g) t1(µm)Si 2.33 1840 3.32 x103 1.3
100 8.6 x104 0.05Graphite 1.58 300 4.02x104 0.16
36
Soft x-ray spectroscopy: unique features
• XAFS measurement in the soft x-ray (short absorptionlength) region is often made using yield spectroscopyElectron yield (total, partial, Auger)X-ray fluorescence yield (total, selected wavelength)Photoluminescence yield (visible, light emitting materials)XEOL (X-ray excited optical luminescence) and TRXEOL (Time-resolved X-ray Excited Optical Luminescence)
• Since soft X - ray associates with the excitation of shallow core levels, the near-edge region (XANES/ NEXAFS) is the focus of interest for low z elements and shallow cores
37
E.G.: the Interplay of TEY and FLY
c-BN
h-BN
Si(100)
a-BN
80 nm
Diamond-like
Graphite-like
Amorphous
Cubic BN film grown on Si(100) wafer? Preferred orientation of the h-BN film?
hv TEY FLY
38
190 200 210 220
4
3
2
1
b
600
200
400
900
Inte
nsity
(a.
u.)
Photon Energy (eV)
190 200 210 220
4
32
1a
600400200
900
Inth
esity
(a.
u.)
Photon Energy (eV)
normal
glancing
TEY
FLY
c-BN
h-BN
Si(100)
a-BN
hv TEYFLY
X.T. Zhou et.al. JMR 2, 147 (2006)
Boron K-edge
π* ε
I (1s -π*) minimum
I (1s -π*) maximum
π* ε
39
hvop
hvex
PLY
Mono
XEOL
XA
FS
Abs.
E
200 850
Wavelength (nm)
CB
VB
EF
XAFS and XEOL (Optical XAFS)
Edge
40
40
• X-ray photons in, optical photons outIllustrations
BN nanowiresSi nanowiresZnS nanoribbons
XEOL - Energy Domain
41
W.-Q. Han et al. Nanoletter. 8, 491-494 (2008)
Boron nitride nanotube (BNNT)
Liu et. al. (UWO) unpublished
BNNT
h-BN
B-O bond
Oxygen
4242
W a v e l e n g t h ( n m )
2 0 0 3 0 0 4 0 0 5 0 0 6 0 0 7 0 0 8 0 0
Inte
nsit
y (a
rb. u
nits
)
1 0 0 0
2 0 0 0
3 0 0 0
4 0 0 0
5 0 0 0
6 0 0 0
7 0 0 0
8 0 0 0
9 0 0 0
1 0 0 0 0
1 1 0 0 0
1 2 0 0 0
4 6 0 n m 6 3 0 n m
5 3 0 n m
h v e x ( e V )1 8 9 0
1 8 6 7
1 8 5 11 8 4 7 .5
1 8 4 5
1 8 4 21 8 4 0
1 8 3 8 .5
1 8 3 0
W a v e le n g t h ( n m )3 0 0 4 0 0 5 0 0 6 0 0 7 0 0
Inte
nsi
ty
0
1 0 0 0
2 0 0 0
3 0 0 0
4 0 0 0 1 8 4 7 .5 e V
1 8 4 2 e V
d i f f e r e n c e c u r v e
P h o t o n E n e r g y1 8 4 0 1 8 5 0 1 8 6 0 1 8 7 0
TE
Y
0
1
2
3S i K - e d g e
S i O 2
S i
( a ) ( b )
Si K-edge XEOL of silicon nanowires
T.K. Sham et al. Phys. Rev. B 70, 045313 (2004)
4343
Si nanowire
Photon Energy (eV)
1830 1840 1850 1860 1870 1880
Inte
nsit
y (a
rb. u
nits
)
0
10
20
30
40
PLY zero order
TEY
FLY
630 nm
460 nm
530 nm
SiSiO2
Photoluminescence: Si K-edge
44
1050104010301020
Energy (eV)
332 nm
OL
W XAS
1050104010301020
Energy (eV)
520 nm
OL
ZB XAS
ZnS hetero-crystalline nano-ribbon
ZnS nw (wurtzite)
ZnS nw (zinc blend)
700600500400300
Wavelength (nm)
280 K
10 K Total
700600500400300
Wavelength (nm)
Total
0-14 ns
520 nm
332 nm
X.-T. Zhou et al., J. Appl. Phys. 98, 024312(2005)
R.A. Rosenberg et al., Appl. Phys. Lett. 87, 253105(2005)
45
45
• Timing - resolved XEOL (TRXEOL)• Illustrations
ZnO: Nanodeedle vs NanowireCdSe-Si: Hetero nanostructures
XEOL - Time Domain
46
46
TRXEOL at APS
T.K. Sham & R.A. Rosenberg, ChemPhysChem 8, 2557-2567 (2007)
47
47
Time-gated spectroscopy
• Select time window(s)
• Obtain spectra /yields of photons arriving within that window
15010050
Time (ns)
153 ns
Fast time window Slow time window
48
48
CdSe -Si hetero nanoribbons hv = 1100 eV
total optical yield
0-20 ns
20-150 ns
Si
CdSe
R.A. Rosenberg et. al. Appl. Phys. Lett., 89, 243102(2006)
X.H. Sun et al.J. Phys. Chem., C, 111, 8475(2007)
4949
CdSe-Si Heterostructure: Se L3,2 - edge
1400 1420 1440 1460 1480 1500 1520
0.1
0.2
20 - 150 ns
0 - 20 ns
Un-gated
TEY
Inte
nsity
(ar
b. u
nits
)
Photon Energy (eV)
Se L3,2
-edge
50
50
STXM: Scanning Transmission X-ray Microscopy
STXM @ the SM beamline @CLS
J.G. Zhou, J. Wang, H.T. Fang, C.X. Wu, J.N. Cutler, T.K. Sham, Chem. Comm. 46, 2778 (2010)
Fresnel Zone Plates
30nm
Courtesy of A.P. Hitchcock, McMaster
51
S1S2 S9
S3
S7
S8
(S2)
Mico/nano spectroscopy of N-CNT
J. Zhou, J. Wang et al.J. Phys. Chem. Lett. (2010) DOI: 10.1021/jz100376v
TEM STXM
______500 nm