y. miyagawa (aist)ccp2006 gyengju plasma analysis for piii processing by a pic-mcc simulation y....
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Y. Miyagawa (AIST) CCP2006 Gyengju
Plasma analysis for PIII processing by a PIC-MCC simulation
Y. Miyagawa, M. Ikeyama, S. Miyagawa National Institute of Advanced Industrial Science and Technology
(AIST Chubu-center), Nagoya, Japan
M. Tanaka, H. Nakadate PEGASUS Software Inc., Tokyo, Japan
Outline1. Introduction ( about PIII and PEGASUS )2. Plasma around a trench shaped target. 3a. Hollow cathode discharge Plasma in a pipe.3b. Plasma with a grounded rod on the center of a pipe.4. Gas flow and Plasma inside of a PET bottle.5. Plasma around plural targets6. Summary
Y. Miyagawa (AIST) CCP2006 Gyengju
The development and applications of plasma processing such as plasma assisted CVD and PVD, magnetron sputter processing, plasma immersion ion implantation (PIII), etc. become highly important in various industrial fields. In plasma processing, plasma control is the topmost priority.
In PIII, the complex sheath shape which is formed around a complex shaped target affects strongly the energy and the flux of the implanted ions on the target surface, and so, affects the compositional depth profile of the treated surface and the homogeneity and the adhesion strength of the coatings. In order to analyze the plasma and to find the most appropriate condition for the process, computer simulation is quite useful.
Introduction
Y. Miyagawa (AIST) CCP2006 Gyengju
In order to analyze the behavior of charged particles and neutral atoms in the plasma together with the gas flow, the simulation software "PEGASUS” was developed. For low pressure gas system, PIC-MCC (Particle-in Cell + Monte Carlo Collision) methods are used.
Using PEGASUS, 4 types of simulation were performed.
P E G A S U S( Plasma Enhanced materials processing and
rarefied GAS dynamics Unified Simulation tools )
Y. Miyagawa (AIST) CCP2006 Gyengju
A : with a Cartesian coordinate system gas:ArPlasma around a trench shaped target immersed in a high density Ar plasma. A negative pulse voltage was applied to the target.
C : with a cylindrical coordinate system gas:Ar, N2
For inner coating of a PET bottle; Glow discharge plasma with a thin pipe on the center. Gas is injected from the tip of the pipe.At first, the gas flow field was simulated by DSMCM until it reached the steady state. Then, coupling simulation of the DSMCM and PIC-MCCM was performed.
B : with a cylindrical coordinate system gas:ArFor inner coating of a pipe; Hollow cathode discharge plasma Glow discharge plasma with a grounded rod on the center.
D: with a cylindrical coordinate system gas:N2, ,C2H2
For processing of plural targets; Glow discharge plasma generated by a negative pulse voltage after a positive- or a negative- pulse voltage were simulated and compared.
Y. Miyagawa (AIST) CCP2006 Gyengju
Simulation Scheme of Gas Phase Simulator
PHM PIC-MCCM
Plasma
Static Electric FieldIon-Electron DensityIon-Electron FluxEEDF
NMEM DSMCM
Gas DensityRadical DensityRadical Flux
Gas FlowData Base
GUIM
input data
Output monitoring final results
MODULES Coordinate system : Cartesian and cylindrical
PHM (Plasma Hybrid Module) (high density gas)NMEM(Neutral Momentum Equation Module) (Fluid Model: high density gas)PIC-MCCM(Particle-in-Cell-Monte Carlo Collision Module) (low density gas)DSMCM(Direct Simulation Monte Carlo Module) (Particle Model: low density gas)GUIM (Pre/Post Processor)
PIII is processed in a low density gas (0.1 ~ 100 Pa)
Y. Miyagawa (AIST) CCP2006 Gyengju
In the PIC method, movements of super particles ( a bunch of charged particles of the same kind ) are followed. The charge and the mass of a super particle are from 108 to 101
0 times the real particle depending on the statistical condition.
DSMCM is based on a probabilistic method for solving Bolzmann equation. By using the super particle Monte Carlo method, the gas flow field is rapidly calculated for the case that the density of neutrals such as radicals or sputtered particles is very low in comparison with the fed gas atom density.
The collision rates are calculated based on the energy dependent cross section.
Simulation Method
Y. Miyagawa (AIST) CCP2006 Gyengju Y. Miyagawa (AIST) IUMRS-ICAM-2003 Yokohama
Energy dependence of Collision cross sections of an electron with an ion
σtot =σm+σdi+σsi+σex
σm : momentum transfer e + Ar Ar + eσdi : direct ionization e + Ar Ar+ + e + eσsi : secondary ionization e + Ar* Ar+ + e + eσex : excitation e + Ar Ar* + e
Momentum transferM. Hayashi, Institute of Plasma Physics Report No. IPPJ-AM-19, (1981)direct ionizationD. Rapp and P. Englander-Golden, J. Chem. Phys. 43, 1464 (1965)secondary ionizationY. Nakamura et al, 1989 Technical Paper of Electrical Discharge, IEE, ED-89-72excitationA. Chutjian and D.C. Cartwright, Phys. Rev. A23, 2178-2193 (1981)
10-14
10-15
10-16
10-17
10-18
10-19
cros
s se
ctio
n (
cm2)
1 10 1000.1
electron energy (eV)
σm σdi
σex
σsi
Example of database : Ar gas
Y. Miyagawa (AIST) CCP2006 Gyengju
Ion Source
Target Beam Scanner
Ion BeamAnalyzing Magnet
Pumping
Ion Beam Implantation using an Accelerator
Plasma Immersed Ion Implantation (PBII, PIII)
Plasma Source
PumpingHigh Voltage Pulser
+
-
Target
Difficult to implant to a large area or a complicated shaped target
For a large area or a complicated shape target.Simple system structure is another good point.But,Not easy to process the target with a narrow hole, trench, etc, or inside of a pipe.Non single ion implantation is another demerit
Y. Miyagawa (AIST) CCP2006 Gyengju
Plasma Immersed Ion Implantation
When a pulsed negative high voltage (V) is applied to the target which is immersed in a plasma, an ion sheath is formed around the target.
The potential of the plasma is about a few ten voltage, so, ions are implanted from the sheath edge to the target.
パルス波形
Time (micro sec)
volta
ge (
V) -100-200-300-400-500
0
0 2 4 6 8 10
Plasma
ion
target
Y. Miyagawa (AIST) CCP2006 Gyengju
Cartesian coordinate system gas:Ar
PIII condition;
Plasma around a trench shaped target immersed in a high density Ar plasma. A negative pulse voltage was applied to the target.
Simulation A
Y. Miyagawa (AIST) CCP2006 Gyengju
Time (micro sec)
volt
age
(V) -100
-200
-300
-400
-500
0
0 2 4 6 8 10
Results of simulation : Trench shaped target Ar plasma ( 0.1 mTorr, 1016 m-3 ) Vmax : -500V = 1
Pulse shape
1cm 1cm
2cm
distance (cm) distance (cm)
dis
tan
ced
ista
nce
dis
tan
ce (
cm)
2 41 30 2 41 30
2
1
0
2
1
0
2
1
0
3
10.8 s
8.4 s
7.2 s 1.2 s
2.4 s
3.6 s
Time evolution of plasma density near the target
0
1016
(m-3 )
Blue area is the ion sheath where electrons are repelled out.Red area is filled with high density plasma.
Y. Miyagawa (AIST) CCP2006 Gyengju
0
10
20
30
0 2 4 6 8 10Time (s)
Ion
Flu
x (a
.u.)
simulation analytical
-2 kV
-5 kV
Vmax = -20 kV
Sh
eath
Len
gth
(cm
)
0
1
2
3
4
5
0 2 4 6 8 10Time (s)
-2 kV
-5 kV
-20 kV
Ar ( 1016 m-3 )
Sheath length on the flat part of the target surface.
Comparison of the simulation results with the analytical results based on the Child-Langmuir method. Initial Ar plasma density = 1x1016 m-3
Analytical solutions are only for a planer, cylindrical and spherical targets.No solutions for a complicated shape target.
Ion flux on the flat part of the target surface.
Y. Miyagawa (AIST) CCP2006 Gyengju
Position dependence of the ion flux on the surface of the trench shaped target.
0.5
1.52.3510
s
bottomside
outside
top
ion
flu
x (1
015 c
m-2 s
-1)
0
1
2
3
4
5
6 -2 kV
sbottom
side
outside
top
0.51.52.356100
2
4
6
8
10
0 13 26 39mmPosition
(distance from the center)io
n f
lux
(1015
cm
-2 s
-1) -20 kV
13mm
13m
m
2mm
bottom
sid
e
ou
tsid
e
top
Ar :1 mTorr, 1x1016 m-3
Time increases short
sheath length increases short
ion flux decreases(bottom, top) high(inside) medium
long
long
lowlow
When V is high, Ion flux is high, sinceself ignition plasma generates.
Ion flux to the inside surface is very low, especially for V is high.
When plasma intensity is high, sheath length is short.For conformal implantation, high plasma intensity is desirable.
Y. Miyagawa (AIST) CCP2006 Gyengju Y. Miyagawa
with a cylindrical coordinate system gas:Ar
For inner coating of a pipe.Hollow cathode discharge plasma was simulated.
Glow discharge plasma with a grounded rod on the center was also simulated
Simulation B
Y. Miyagawa (AIST) CCP2006 Gyengju
Simulation of Hollow Cathode Discharge
When a negative voltage is applied to a cylindrical target, a high density plasma is generated inside of the target as a result of hollow cathode discharge effect under a special condition. The hollow cathode discharge plasma can be applied to inner coating of a cylindrical target.
In order to obtain the condition for a hollow cathode discharge, PIC-MCCM simulation was carried out.
Y. Miyagawa (AIST) CCP2006 Gyengju
Comparison of Plasma Intensity
Glow discharge Hollow Cathode discharge
The hollow cathode discharge plasma is several order more intense than the glow discharge plasma.
Y. Miyagawa (AIST) CCP2006 Gyengju
Schematics of the model10cm, 10mm
20cm
, 20m
m
Ar
r = 1cm, 2cm, 2mm
l = 5, 10, 15, 30 cm (mm)
dr = 1 mm, 0.1mmr
l
z
20 cm
r
-V
l
Plane anode
Cylindrical target (cathode)
cm-size & mm-size without a rod & with a rod
A quarter (pink area) was simulated with a cylindrical coordinate systemGrounded rod
Y. Miyagawa (AIST) CCP2006 GyengjuAr 50Pa DC -3kV
l = 5 cm, radius = 2 cmaspect ratio ( l / r ) = 2.5
At 1.2s, an intense plasma fill the whole inside of the pipePendulum motion occurs
1012
(m-3 ) 1017
0.2 s 0.4 s 1.0 s 1.2 s
electron flux on the wall
Ar ion density
electron density
1
40eV
electron temperature
Ar+ ion temperature
max=105
0.2 s 0.4 s 1.0 s 1.2 s
electron flux
0.1s
10cm
5cm
r =2cm
20c
m
Y. Miyagawa (AIST) CCP2006 GyengjuAr 50Pa DC -3kV, = 1
l = 5 cm, radius = 2 cmaspect ratio ( l / r ) = 2.5
When a negative high voltage is applied to the pipe,Electrons start to move towards the anode, collide with gas atoms and plasma generates near the exit of the pipe.
The plasma enters the pipe.
Finally at 1.2s, pendulum motion occurs, and
intense plasma fill the whole inside of the pipe
0.2 s 0.4 s 1.0 s 1.2 s
Ar+ ion temperatureelectron flux on the wall
electron density
electron flux
0.1 s
Y. Miyagawa (AIST) CCP2006 Gyengju Electron density just before the discharge Voltage : pulse ( Vmax = 1kV)
20cm
10cm
5cm
Gas Pressure Dependence
1 Pa 3 Pa 10 Pa 30 Pa 100 Pa 300 Pa
1012
1017(m-3 )
r = 1cm, 1000 V = 1
Discharge outside
Pressure is too low
Glow discharge? plasma
Pressure is too high
Hollow cathode plasma
Proper condition
Y. Miyagawa (AIST) CCP2006 Gyengju
radius = 2 cm, half length = 5 cm
Applied voltage Dependence Gas pressure : 2Pa = 1
Low VoltageNo Plasma
1012
1014
(m-3 )
30 V1012
1017
(m-3 )
1000 V
High VoltageDischarge outside
Proper voltageHollow Cathode Discharge Plasma
1012
1017
(m-3 )
100 V
Y. Miyagawa (AIST) CCP2006 GyengjuEffect of secondary electron emission coefficient by ion bombardment)
Ar gas, pulse rising time : 0.5s, radius = 2cm ( d = 4cm)
Pmin strongly depends on
=1: plasma generates for pressure > 1Pa
= 1, Vmax= 200V
1012
1017(m-3 )
2Pa 10Pa
= 0.3, Vmax= 200 V
6 Pa 20 Pa 60 Pa 2 Pa
20c
m
10cm1012
1017(m-3 )
=0.3 : for pressure > 4Pa
= 0.1
2Pa-1kV 6Pa-200V 6Pa-1kV 2Pa-200V
1012
1016(m-3 )
=0.1 : no hollow cathode plasma
Y. Miyagawa (AIST) CCP2006 Gyengju
Pressure x diameter (Torr.m)
Ap
plie
d v
olta
ge
(V
)
10-2 10010-110-310-4
102
103
104
101
Paschen curve (Ar gas )
= 1
cm -sized
Paschen CurveA glow discharge starts with the voltage higher than the curve.
Summary for a pipe of small aspect ratio ( < 7 )
● ○ Hollow cathode plasma generates. ★ ☆ Glow discharge starts outside the pipe.
▲ △ High density plasma does not generates.
Dischargeoutside(cm)
Hollow cathode discharge
mm-sized
Discharge outside (mm)
No plasma generates
The hollow cathode discharge condition is much sever for a mm-sized pipe than a cm-sized pipe.
Y. Miyagawa (AIST) CCP2006 Gyengju
10-4 10-3 10-2 10-1
0
-5
-15
-10
-20
PRESSURE(Torr)
VO
LT
AG
E(k
V)
Diameter: 30mm10 mm
Ar
Hollow Cathode Discharge
Hollow Cathode Discharge Condition
experiment
The smaller the size is, the condition becomes severe.
Y. Miyagawa (AIST) CCP2006 Gyengju
Example of pipe inner coating
1cm 4cm
Y. Miyagawa (AIST) CCP2006 Gyengju
for a pipe of higher aspect ratio
1012
1017(m-3 )
50Pa, DC - 3 kV = 1 radius = 2 cm
l = 5 cm l = 10 cm
Plasma spreads whole inside the pipe
l = 15 cm
Plasma does not reach the middle
Y. Miyagawa (AIST) CCP2006 Gyengju
1012
1017(m-3 )
Long pipe with a large aspect ratio ( d/L > 7 )
Without a rod
50PaDC - 3kV
radius : 2 cmlength : 30 cm
d
L
Hollow cathode plasma.
A glow discharge plasma fills the whole inside. How long the pipe is, it works.
1kPaRF-500V
300PaDC-500V
radius : 2 mm,length : 30 mm
Not only for the cm-sized pipe, it also works for a mm-sized pipe.
Plasma in the middle part is insufficient.
With a grounded rod on the center
100PaDC - 1kV
300PaRF -1kV
radius : 2 cm,length : 30 cm
Y. Miyagawa (AIST) CCP2006 Gyengju
Glow discharge inside of a pipe with a ground rod on the center
(-3kV, 10sec, 1kHz)
3 cm
The glow discharge plasma needs much higher pressure than for a hollow cathode discharge
Ar:100 Pa Ar: 5 Pa
Y. Miyagawa (AIST) CCP2006 Gyengju
Long pipe with high aspect ratio ( d/L > 7 )
300Pa, Vmax= 500V
diameter : 4 mm, length: 30 mm
Simulation (Ar) Experiment (CH4)
1012
1017
(m-3 )
diameter : 2.2 mm, length : 50 mm
0.15 mm0.2 mm
380Pa, Vmax = 500V
Grounded rod on the center
3 mm
Y. Miyagawa (AIST) CCP2006 Gyengju
Example of DLC coating on inside surface of a pipe
length 50mm
Inside diameter 1.6 mm 4.5 mm
Non
coa
ted
Diameter 1.6 mmCH4 1000PaVmax 500VPulse length 10sFrequency 1kHzdiameter 4.5 mmCH4 300PaVmax 500VPulse length 10sFrequency 1kHz
coat
ed
Y. Miyagawa (AIST) CCP2006 Gyengju Y. Miyagawa
with a cylindrical coordinate system (Ar, N2 )
For inner coating of a PET bottle;
Glow discharge plasma with a thin pipe on the center. Gas is fed from the tip of the pipe.
Simulation C
Y. Miyagawa (AIST) CCP2006 Gyengju
In recent years, the inner coating of a PET ( polyethylene terephthalate ) bottle with DLC gathered much interest. It drastically decreases the permeability of oxygen and other gases. It will make a PET bottle a superior substitute for a heavy glass bottle. PIII is suitable process for such inner coatings of DLC. However, in JAPAN, so far, beer breweries withhold it in consideration of the reaction of green organizations, regardless the effect of the coating on the recycling is negligible.
environmental conservation
Y. Miyagawa (AIST) CCP2006 Gyengju
Inner coating of a PET bottle:
Gas is injected into the bottle. So,Simulation of gas flow (MCC) and plasma (PIC+MCC) was carried out alternately.
Before starting plasma simulation, the gas flow was analyzed using Monte Carlo collision method.After the pressure reached the steady state, the plasma simulation by PIC-MCC started.
Y. Miyagawa (AIST) CCP2006 Gyengju
Cross sections of collisions in N2 plasma
10 100 1000
energy (eV)
10-17
10-16
cros
s se
ctio
n (c
m2)
e + N2 --> 2e + N2+
e + N2 --> 2e + N2*
e + N2 --> e + 2N
e + N --> 2e + N+
ionization
excitation
resolution
ionization
Y. Miyagawa (AIST) CCP2006 Gyengju
The N2 gas pressure distribution obtained by DSMCM after it reached the steady state.
8 7 6 5 4
11
10
2
19
3
distance (mm)0 10 20 30
pre
ssu
re (
Pa)
pressure at H = 50 mm
1210
86420
0
20 Pa
N2
5 sccm
gas inlet
pipe ( radius 3mm): +V is applied
PET bottlecover: grounded electrode
0 10 20 30 mm0
15
50
74
115
145
170
insulator
insulatormm
time (s)
250
0
500
0 1 2 3 4 5 6 7 8
applied voltage
volt
age
(V)
Y. Miyagawa (AIST) CCP2006 Gyengju
3.5e15
0
Evolution of electron density
Ar 5 Pa Vmax = 500V 10 s
Results of the simulation
time (s)
250
0
500
0 2 4 6 8 10 12 14 16
applied voltage
volt
age
(V)
s0.1 2 4 6 8 10 11
Plasma density increases even after the voltage is off.
Y. Miyagawa (AIST) CCP2006 Gyengju
Time evolution of densities of electron, N2+ ion, N atom,and N2* radical.
1013
m-3
3x1018
1 2 3 4 5 8 s
1013
m-3
1016
e
1013
m-3
1016
N2+
1 2 3 4 5 8 s
1013
m-3
3x1017
N
N2*
N2 10 Pa500V, 5 s = 1.
Plasma shape depends on the gas species, the pressure, the voltage, , the gas feeding speed, etc..
Y. Miyagawa (AIST) CCP2006 Gyengju
N2 10Pa, 500V, 5 s,= 1
Plasma intensity increases even after the voltage was off, but
Time ( micro sec )
9
8
765
11
0
1
2
x1016
Den
sity
(m
-3)
incr
ease
9
876
5
11
0 82 4 6
Den
sity
(m
-3)
x1016
0
1
2
incr
ease
Vo
ltag
e
(V)250
0
500
electron
N2+
Applied Voltage
Ion flux and Ion energy flux at 5 s ( V = 500 V ) and at 8 s ( V = 0 )
Energy Flux
123123 3.3 1.2
Particle Flux
Max intensity ( x1019 )
8 s5 sdecrease
Max intensity ( x1019 )
8 s5 sdecrease
the particle flux on the inside wall decreases
Y. Miyagawa (AIST) CCP2006 GyengjuDensity at each observation point. N2 10 Pa, 500V, 5s, = 0.5
8 7 6 5 4
11
10
2
19
3
den
sity
(10
15m
-3) 6
4
2
0
electron7
8
11
5
6
4
N2+ ion
5
6
8
11
7
4
4
2
0
den
sity
(10
15m
-3)
den
sity
(10
16 m
-3)
4
2
0
N2*radical
0 25 50 75Time ( s )
Comparison with exp.
Time ( s)0 500 1000 1500
Ion
den
sity
(10
16m
-3)
Ar 2Pa1kV, 5s
experiment
Time after V was off ( s)
CalculationN2 10Pa
0
1
2
3
4
5
Regardless of the difference of gas species,
Similar result was obtained !!!
After the voltage was off,the plasma intensity increases, and reaches the maximum at ~2s, then decreases slowly.
Y. Miyagawa (AIST) CCP2006 Gyengju
Comparison of the calculated result with an experiment
The grounded cover was removed to take the photo.
Ar gas pressure; outside: about 2 Pa, inside : unknown 1kV, 5 s, 0.5 kHz.
experiment simulation.
Ar gas pressure: about 10 Pa. 500V, 5 s
Y. Miyagawa (AIST) CCP2006 Gyengju
0
1000
2000
3000
4000
800 1000 1200 1400 1600 1800 2000
Raman spectrum
Example of DLC coating inside of a PET bottle
C2H2 gas pressure: outside: about 2 Pa, inside: unknown 1kV; 5s, 1 kHz.
Typical DLC spectrum
Y. Miyagawa (AIST) CCP2006 Gyengju
with the cylindrical coordinate system Gas:N2 and C2H2
For processing of plural targets
Simulation D
Y. Miyagawa (AIST) CCP2006 Gyengju
In the PIII processes, negative pulse voltages are applied to a processed target, and the ions are accelerated in the sheath and implanted on the target surface.
So, for practical applications, especially for processing plural targets simultaneously, it is very important to know the plasma behavior in the surroundings of the targets.
One of our purposes is to find the optimal conditions for DLC coatings on a complex shaped target and on plural targets.
We have performed simulations for the N2 and C2H2 plasma behavior in the surrounding of plural targets, to which three types of negative pulse voltage were applied:
case A: a single negative voltage, case B: a negative voltage then a negative voltage (double negative)case C: a positive voltage then a negative voltage ( bipolar )
An N2 gas plasma have been used in PIII processing to modify the surface mechanical characteristics by nitriding or carbonizing the surface.
Y. Miyagawa (AIST) CCP2006 Gyengju
Schematics of the simulated system.
200 mm
250
mm
50 mm
19 mm2 mm
38 mm
38 mm
38 mm
Pulse shape
Time (s)0 5 10 15 20
1
0
-1V
olt
age
(kV
)
Target 1
Target 2
Target 3
Target 4
The y axis is the symmetric axis of the cylindrical coordinate system.
The x-axis is also symmetric.
Chamber wall is grounded.
Y. Miyagawa (AIST) CCP2006 Gyengju
25
20
15
10
5
0
25
20
15
10
5
0
6 s4 s2 s
8 s7.5 s 7 s
0 5 10 15 20 0 5 10 15 20 0 5 10 15 20
0 5 10 15 20 0 5 10 15 20 0 5 10 15 20
1012
( m-3) 2 x1015
+1k
0
-1k0 5 10 15 s
A: single negative V
-1kV ( 0 ~7 s ) 2Pa, = 3
plasma is too weakX
Y. Miyagawa (AIST) CCP2006 Gyengju
1012
( m-3) 2 x1015
25
20
15
10
5
0
25
20
15
10
5
0
0 5 10 15 20 0 5 10 15 20 0 5 10 15 20
0 5 10 15 20 0 5 10 15 20 0 5 10 15 20
6 s5 s2 s
16.5 s15s10 s
B: Negative and negative
-1kV (0~5 s) then -1kV(10 s ~) 2Pa, = 3
Discharge starts !!unstablex
+1k
0
-1k0 5 10 15 s
Y. Miyagawa (AIST) CCP2006 Gyengju
1012
( m-3) 2 x1015
25
20
15
10
5
0
25
20
15
10
5
0
0 5 10 15 20 0 5 10 15 20 0 5 10 15 20
0 5 10 15 20 0 5 10 15 20 0 5 10 15 20
12.2 s12 s10 s
6 s5 s2 s
Plasma is between targets
+1k
0
-1k0 5 10 15 s
B: Positive then negative
+1kV (0~5 s) then -1kV(10 s ~) 2Pa, = 3
Y. Miyagawa (AIST) CCP2006 Gyengju
25
20
15
10
5
0
25
20
15
10
5
0
0 5 10 15 20 0 5 10 15 20 0 5 10 15 20
0 5 10 15 20 0 5 10 15 20 0 5 10 15 20
6 s5 s1 s
15 s11 s10 s
no plasmabetween targets !!x
Low : = 2
+1k
0
-1k0 5 10 15 s
C: Positive then negative
+1kV (0~5 s) then -1kV(10 s ~) 2Pa, = 2same pressure, only is low
1012
( m-3) 2 x1015
Y. Miyagawa (AIST) CCP2006 Gyengju
Effects of gas pressure and the secondary electron emission coefficient ()
The pressure and the is high
The plasma generation rate is high.
The sheath length is short anda conformal implantation is realized 1012
( m-3) 2 x1015
25
20
15
10
5
015 s15 s
12.2 s
0 5 10 15 20 0 5 10 15 20
0 5 10 15 20
1.5Pa
= 3
2Pa
= 3
2Pa
= 2
25
20
15
10
5
011.5 s
0 5 10 15 20
3Pa = 2
X X
+1k
0
-1k0 5 10 15 s
C: Positive then negative
+1kV (0~5 s) then -1kV(10 s ~)
Y. Miyagawa (AIST) CCP2006 Gyengju
0
200
400
600
800
0 5 10 15Time ( s )
Ion
En
erg
y (e
V) Time dependence of
Ion energy on the under surface of target 3 0 cm
3 cm
5 cm
distance from
the center
Vo
ltag
e (V
)
-1000
0
1000 Pulse shape
+V on : plasma generates
V off : plasma migrate between targets
-V on : sheath is formed ions impinge on the target surface
Ion energy along the target surface.
11.5s0
200
400
800
400
600
800
1000target 1target 2
0 1 2 3 4 5
En
erg
y (
eV)
En
erg
y (
eV)
Distance from the center axis (cm)
upper surfaceunder surface
target 3target 4
0
200
400
600
800
1000
25
20
15
10
5
011.5 s
0 5 10 15 20cm
3Pa = 2
Vmax = 1 kV
Max ion energy reaches 1 keV
C: Positive then negative
+1kV (0~5 s) then -1kV(10 s ~)
4321
Y. Miyagawa (AIST) CCP2006 Gyengju
Time dependence of number of super particles ( 1 kV, 5 s). C2H2, 3Pa, = E depend ( 1 at 1 keV)
H ( 22.0 )CH ( 9.3 )C2H ( 9.0 ) CH2 ( 4.9 )
C2H2+ (19.0 )
C2H+ ( 2.9 ) CH+ ( 1.2 ) H+ ( 1.0)C2H2
2+ ( 0.6 )
Density near the sheath edge at 5 s x 1013 m-3
3 Pa C2H2 ( 7.17x1020 m-3 )
Total number of super particle was set to 106, so, the curves are saw-like.
Most abundant ion is C2H2+
Most abundant atom is H
0 2.5 5.0 7.5 10
Time ( s )
num
ber
of p
artic
les
num
ber
of p
artic
les
106
105
104
106
105
104
103
H
CH
CH2
C2H
eC2H2
+
C2H+
CH+
H+C2H2
2+
Y. Miyagawa (AIST) CCP2006 Gyengju
The nitrogen and the acetylene plasma around plural numbers of targets has been simulated under the condition of PIII.
The self ignition plasma generated by the first pulse migrates to the space between targets during the voltage off time and it gets denser when the second pulse is on and the plasma becomes conformal to the targets when the density gets intense enough. It depends on the pressure and the secondary electron emission coefficient if the plasma becomes conformal or not before the discharge starts. .
The bombarding ion energy on the target surface and its time dependence was also presented. .
For C2H2 gas plasma, the time dependence of densities of ions ( e, H+, CH+, C2H2
+, C2H+, C2H22+) and molecules ( H, CH2, CH, C2H))
generated by a positive pulse voltage was also presented. .
Y. Miyagawa (AIST) CCP2006 Gyengju
Plasma analysis for PIII&D processing by a PIC-MC simulation
Outline1. Introduction ( about PIII and PEGASUS )2. Plasma around a trench shaped target. 3a. Hollow cathode discharge Plasma in a pipe.3b. Plasma with a grounded rod on the center of a pipe.4. Gas flow and Plasma inside of a PET bottle.5. Plasma around plural targets6. Summary
Thank you for your attention
Y. Miyagawa (AIST) CCP2006 Gyengju 10-14
10-15
10-16
10-17
10-18
1 10 100 1000ENERGY ( eV )
CR
OS
S S
EC
TIO
N (
cm
2 )
e + N2 -> 2e + N2+
e + N2 -> e + N2
e + N2 -> 2e + N2*rot
e + N2 -> e + 2N
N2+ + N2 -> N2
+ + N2
N2+ + N2 -> N2 + N2
+
e + N -> 2e + N+
e + N -> e + N
e + e -> e + e
Energy dependence of cross sections for collisions in a plasma.
C2++ H2 + 2e
C2H22+
+2e
C2H+ + H + 2e
C++ CH2 + 2eCH++ CH + 2eH++ C2H + 2e
C2H2+
+ 2e
e + C2H2
10-15
10-16
10-17
10-18
10-19
10 100 1000 10000ENERGY ( eV )
CR
OS
S S
EC
TIO
N (
cm
2 )
N2 plasma.
C2H2 plasma.