y. sugimoto status & plan jlc vertex detector r&d...hpk h-scan(532nm,normalized) 0 0.2 0.4...
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JLC Vertex Detector R&D
Status & Plan2001 Apr.27Y. Sugimoto
R&D Items
Spatial Resolution Beam TestLaser Test
Radiation Hardness 90Sr (electron) Irradiation252Cf IrradiationHE electron Irradiation
Detector Thickness Cooling SystemThermal Deformation
Readout Electronics Fast Readout (>20MHz)Compact PCI FADC for DAQ
YAG laserspot size 2x2umpluse width 10n以下
Prober走査1um（ｘｙ方向）Temperature 0℃CCD読み出し 250kpixels/s(HPK,EEV)蓄積 2秒（読み出し時間含む）フレーム数 100フレーム(各照射点)gain 72.5uV/e-(HPK) 34.6uV/e-(EEV)吸収長 3um(532nm)1mm(1064nm)
NDフィルタ10ｰ8 ~ 10ｰ9
モニタカメラ
波長変換λ=532 nmor1064nm
YAG laserProberSystem
測定概要（１）
EEV 02-063-phase22x22um
HPK S54662-phase24x24um
モニタカメラ
水平方向水平方向水平方向水平方向
垂直
方向
垂直
方向
垂直
方向
垂直
方向
結果電荷分配H-Scan(EEV)
Normalizedｂｙ Cluster
Signal Ratio=Pixel/Cluster＝Pi/(Pi+Pj)
（Gateによる影響を除き、電荷分配のみを取り出す。）
EEV H-Scan(1064nm,normalized)EEV H-Scan(1064nm,normalized)EEV H-Scan(1064nm,normalized)EEV H-Scan(1064nm,normalized)
-0.2
0
0.2
0.4
0.6
0.8
1
1.2
0 22 44 66
Irradiated Position (um)Irradiated Position (um)Irradiated Position (um)Irradiated Position (um)
Sig
nal
(Norm
alized b
y C
lust
er)
(ra
tio)
Sig
nal
(Norm
alized b
y C
lust
er)
(ra
tio)
Sig
nal
(Norm
alized b
y C
lust
er)
(ra
tio)
Sig
nal
(Norm
alized b
y C
lust
er)
(ra
tio)
165
166
167
1064nm
EEV H-scan(532nm,normalized)EEV H-scan(532nm,normalized)EEV H-scan(532nm,normalized)EEV H-scan(532nm,normalized)
-0.2
0
0.2
0.4
0.6
0.8
1
1.2
0 22 44 66
Irradiated Position (um)Irradiated Position (um)Irradiated Position (um)Irradiated Position (um)
Nora
mlz
ed b
y C
luste
r(ra
tiN
ora
mlz
ed b
y C
luste
r(ra
tiN
ora
mlz
ed b
y C
luste
r(ra
tiN
ora
mlz
ed b
y C
luste
r(ra
ti
163
164
165
５３２５３２５３２５３２nm
V-Scan(EEV)
Normalizedｂｙ Cluster
EEV V-Scan(1064,normalized)EEV V-Scan(1064,normalized)EEV V-Scan(1064,normalized)EEV V-Scan(1064,normalized)
-0.2
0
0.2
0.4
0.6
0.8
1
1.2
0 22 44 66
Irradiated Position (um)Irradiated Position (um)Irradiated Position (um)Irradiated Position (um)
Sig
nal N
orm
alize
d b
y C
luste
r(ra
tio)
Sig
nal N
orm
alize
d b
y C
luste
r(ra
tio)
Sig
nal N
orm
alize
d b
y C
luste
r(ra
tio)
Sig
nal N
orm
alize
d b
y C
luste
r(ra
tio)
72
73
74
1064nm
EEV V-Scan(532nm, normalized)EEV V-Scan(532nm, normalized)EEV V-Scan(532nm, normalized)EEV V-Scan(532nm, normalized)
-0.2
0
0.2
0.4
0.6
0.8
1
1.2
0 22 44 66
Irradiated Position (um)
Sig
nal N
orm
alize
d b
y C
luste
r(ra
tio)
Sig
nal N
orm
alize
d b
y C
luste
r(ra
tio)
Sig
nal N
orm
alize
d b
y C
luste
r(ra
tio)
Sig
nal N
orm
alize
d b
y C
luste
r(ra
tio)
72
73
74
５３２５３２５３２５３２nm
H-Scan(HPK)
Normalizedｂｙ Cluster
HPK H-scan(532nm,Normalized)HPK H-scan(532nm,Normalized)HPK H-scan(532nm,Normalized)HPK H-scan(532nm,Normalized)
0
0.2
0.4
0.6
0.8
1
1.2
0 24 48 72
Irradiated Posit ion(um)Irradiated Posit ion(um)Irradiated Posit ion(um)Irradiated Posit ion(um)
Norm
alized b
y C
luste
Norm
alized b
y C
luste
Norm
alized b
y C
luste
Norm
alized b
y C
luste
18
19
20
HPK H-scan(1064nm,normalized)HPK H-scan(1064nm,normalized)HPK H-scan(1064nm,normalized)HPK H-scan(1064nm,normalized)
0
0.2
0.4
0.6
0.8
1
1.2
0 24 48 72
Irradiated Position(um)Irradiated Position(um)Irradiated Position(um)Irradiated Position(um)
Norm
alized b
y C
luste
r(ra
tN
orm
alized b
y C
luste
r(ra
tN
orm
alized b
y C
luste
r(ra
tN
orm
alized b
y C
luste
r(ra
t
20
19
18
1064nm
５３２５３２５３２５３２nm
V-Scan(HPK)
Normalizedｂｙ Cluster
HPK V-scan(532nm,Normalized)HPK V-scan(532nm,Normalized)HPK V-scan(532nm,Normalized)HPK V-scan(532nm,Normalized)
0
0.2
0.4
0.6
0.8
1
1.2
0 24 48 72
Irrdiated Posit ion(um)Irrdiated Posit ion(um)Irrdiated Posit ion(um)Irrdiated Posit ion(um)
Norm
alized b
y C
luste
r(ra
tio
Norm
alized b
y C
luste
r(ra
tio
Norm
alized b
y C
luste
r(ra
tio
Norm
alized b
y C
luste
r(ra
tio
14
15
16
５３２５３２５３２５３２nm
HPK V-scan(1064 ,Normalized)HPK V-scan(1064 ,Normalized)HPK V-scan(1064 ,Normalized)HPK V-scan(1064 ,Normalized)
0
0.2
0.4
0.6
0.8
1
1.2
0 24 48 72
Irradiated Position(um)Irradiated Position(um)Irradiated Position(um)Irradiated Position(um)
Norm
alized b
y C
luste
r(ra
tN
orm
alized b
y C
luste
r(ra
tN
orm
alized b
y C
luste
r(ra
tN
orm
alized b
y C
luste
r(ra
t
13
14
15
1064nm
位置分解能
2.11.8VHPK(2-phase)
1.82.1HHPK(2-phase)
2.62.2VEEV(3-phase)
1.43.0HEEV(3-phase)
RLM(um)AC(um)Scan方向CCD type
本実験（レーザー）
σEEV_H=1.4um
σEEV_V=2.6um
σHPK_H=1.8um
σHPK_V=2.1um
1998 Beam test
σEEV=2.94±0.23um
σHPK=2.47±0.65um
Liquid
Nitro
gen
Cryo
stat
Motor
Contr
oller
X-Y S
tage
Test
Samp
le
DVM
for Te
mp. M
onito
r
Heate
r
Temp
. Con
troller
Lase
r Disp
lacem
ent
Meter
Amp.,
ADC
Temp
. Sen
sor
Test
setup
of X-
Y stag
e and
Lase
r disp
lacem
ent m
eter
Heate
r
2000 4000 6000 80001000012000
20004000
60008000
1000012000
-40
-20
0
20
40
S7170
✤✦ ✥✪
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✤✦
✤✩
✤✬
✥✥ ✤
✦
✪
✬
✤✤
✤✦
✤
✤✪
✤✬
✥✤
✥✦✤✣✣
✫✣✩✣✧✣✥✣✣✥✣✧✣✩✣✫✣
✤✣✣
❖
✫✣ ✤✣✣
✩✣ ✫✣
✧✣ ✩✣
✥✣ ✧✣
✣ ✥✣
✥✣ ✣
✧✣ ✥✣
✩✣ ✧✣
✫✣ ✩✣
✤✣✣ ✫✣
✤ ✧ ✪
✤✣
✤✦
✤✩
✤✬
✥✥
✦
✪
✬
✤✤
✤✦
✤
✤✪
✤✬
✥✤
✥✦
✤✣✣
✫✣✩✣✧✣✥✣✣✥✣✧✣✩✣✫✣
✤✣✣
❖
✫✣ ✤✣✣
✩✣ ✫✣
✧✣ ✩✣
✥✣ ✧✣
✣ ✥✣
✥✣ ✣
✧✣ ✥✣
✩✣ ✧✣
✫✣ ✩✣
✤✣✣ ✫✣
S7170
20 µm (24.6 6 mm2)
300 µm
Fast Readout
Fast readout is preferable to reduce # of r.o. channel(2000cm2=3.2x108 pixels, 6 ms r.o. 53000 ch@1MHz)
Readout speed ~ few MHz - Limited by CCD
New CCD (HPK)~10 MHz ( 20 MHz by sparce reset )
Present readout electronics: < 10 MHz
New electronics needed
Study of S/N, spatial resolution, radiation hardnesswith high speed readout