zds020n60 : transistors€¦ · no copying or reproduction of this document, in part or in whole,...

Datasheet

www.rohm.com© 2012 ROHM Co., Ltd. All rights reserved.

ZDS020N60 Nch 600V 0.63A Power MOSFET

lOutline

VDSS 600V SOP8

(SC-87)RDS(on) (Max.) 5.0W

ID 0.63A

PD 2.0W

lFeatures lInner circuit

1) Low on-resistance.

2) Fast switching speed.

3) Gate-source voltage (VGSS) guaranteed to be 30V.

4) Drive circuits can be simple.

5) Parallel use is easy.

6) Pb-free lead plating ; RoHS compliantlPackaging specifications

Type

Packaging Taping

lApplication Reel size (mm) 330

Switching Power Supply Tape width (mm) 12

Basic ordering unit (pcs) 2,500

Drain - Source voltage VDSS 600 V

Taping code TB

Marking ZDS020N60

lAbsolute maximum ratings(Ta = 25°C)

Parameter Symbol Value Unit

Pulsed drain current ID,pulse *2

2.5 A

Tc = 25°CContinuous drain current ID *1 A0.63

Gate - Source voltage VGSS 30 V

PD 2.0 WPower dissipation (Tc = 25°C)

Junction temperature Tj 150 °C

Range of storage temperature Tstg -55 to +150 °C

(2)

(1)

(3) (4)

(7)

(8)

(6) (5)

*1 BODY DIODE

(1) Source (2) Source (3) Source (4) Gate

(5) Drain (6) Drain (7) Drain (8) Drain

1/11 2012.08 - Rev.B


Data SheetZDS020N60

Thermal resistance, junction - ambient

RDS(on) *3

lElectrical characteristics(Ta = 25°C)

Parameter

Zero gate voltage drain current IDSS

Drain - Source breakdown

voltageV(BR)DSS VGS = 0V, ID = 1mA

VDS = 600V, VGS = 0V

VGS = 10V, ID = 0.5A

100

Symbol ConditionsValues

Unit

- 62.5 °C/W

mA

lThermal resistance

Parameter SymbolValues

UnitMin. Typ. Max.

RthJA -

- V

- 4.4

Min. Typ. Max.

-

-

600 -

5.0 WStatic drain - source

on - state resistance

100 nA

VGate threshold voltage VGS (th) VDS = 10V, ID = 1mA 2.0 - 4.0

Gate - Source leakage current IGSS VGS = 30V, VDS = 0V -

2/11 2012.08 - Rev.B


Data SheetZDS020N60

*1 Limited only by maximum temperature allowed.

*2 Pw 10ms, Duty cycle 1%

*3 Pulsed

Gate - Source charge Qgs *3

Total gate charge Qg *3 VDD ⋍ 450V

UnitMin. Typ. Max.

Qgd *3 - 5 -

nC

- 12 20

- 40 -

pF

lElectrical characteristics(Ta = 25°C)

Parameter Symbol ConditionsValues

-

Reverse transfer capacitance Crss f = 1MHz

Input capacitance Ciss VGS = 0V - 310 -

Output capacitance Coss VDS = 10V - 145

-

Turn - off delay time td(off) *3 RL = 333W - 65 -

UnitMin. Typ. Max.

Turn - on delay time td(on) *3 VDD ⋍ 200V, VGS = 10V - 25 -

nsRise time tr

*3 ID = 600mA - 20

-

lGate Charge characteristics(Ta = 25°C)


Fall time tf *3 RG = 50W - 65

- S

Gate plateau voltage V(plateau) VDD ⋍ 450V, ID = 600mA - 5 - V

ID = 600mA

VGS = 10V

- 3 -

Gate - Drain charge

Transconductance gfs *3 VDS = 10V, ID = 0.5A 0.05 0.5

3/11 2012.08 - Rev.B


Data SheetZDS020N60

A

Max.

lBody diode electrical characteristics (Source-Drain)(Ta = 25°C)


UnitMin. Typ.

0.63

Forward voltage VSD *3

Inverse diode direct current,

pulsedISM

*2 -

Inverse diode continuous,

forward currentIS

*1

Tc = 25°C

- -

2.5 A

VGS = 0V, IS = 1A - - 1.5 V

-

4/11 2012.08 - Rev.B


Data SheetZDS020N60

lElectrical characteristic curves

0

20

40

60

80

100

120

0 25 50 75 100 125 150 175

0.01

0.1

1

10

0.1 1 10 100 1000 10000

PW = 100us

PW = 1ms

PW = 10ms Operation in this area is limited by RDS(on)

Ta=25ºC Single Pulse

0.001

0.01

0.1

1

10

0.0001 0.01 1 100

Rth(ch-a)=62.5ºC/W

Rth(ch-a)(t)=r(t)×Rth(ch-a)

Mounted on ceramic board

(30mm × 30mm × 0.8mm)

top D=1 D=0.5 D=0.1 D=0.05 D=0.01 bottom Signle

Ta=25ºC

Fig.1 Power Dissipation Derating Curve Fig.2 Maximum Safe Operating Area

Pow

er

Dis

sip

ation

: P

D/P

D m

ax. [%

]

Dra

in C

urr

ent

: I D

[A

]

Fig.3 Normalized Transient Thermal Resistance vs. Pulse Width

Norm

aliz

ed T

ransie

nt

Therm

al R

esis

tance :

r(t

)

Pulse Width : PW [s]

Junction Temperature : Tj [°C] Drain - Source Voltage : VDS [V]

5/11 2012.08 - Rev.B


Data SheetZDS020N60


400

450

500

550

600

650

700

750

800

-50 0 50 100 150

VGS = 0V

ID = 1mA

0.001

0.01

0.1

1

10

100

0 1 2 3 4 5 6 7 8

VDS= 10V

Ta= 125ºC Ta= 75ºC Ta= 25ºC

Ta= -25ºC

0

0.05

0.1

0.15

0.2

0.25

0.3

0 0.2 0.4 0.6 0.8 1

VGS=4.0V

VGS=10.0V

VGS=5.0V

VGS=6.0V

Ta=25ºC Pulsed

0

0.5

1

1.5

2

0 2 4 6 8 10

VGS=4.0V

VGS=10.0V

VGS=6.0V

VGS=5.0V

Ta=25ºC Pulsed

Fig.4 Typical Output Characteristics(I)

Dra

in C

urr

ent

: I D

[A

]

Drain - Source Voltage : VDS [V]

Fig.5 Typical Output Characteristics(II)

Dra

in C

urr

ent

: I D

[A

]


Fig.6 Breakdown Voltage vs. Channel Temperature

Dra

in -

Sourc

e B

reakdow

n V

oltage :

V(B

R)D

SS [

V]

Junction Temperature : Tj [°C]

Fig.7 Typical Transfer Characteristics

Gate - Source Voltage : VGS [V]

Dra

in C

urr

ent

: I D

[A

]

6/11 2012.08 - Rev.B


Data SheetZDS020N60


0.0

1.0

2.0

3.0

4.0

5.0

-50 -25 0 25 50 75 100 125 150

VDS = 10V

ID = 1mA

0.01

0.1

1

10

100

0.01 0.1 1 10 100

VDS= 10V

Ta= -25ºC Ta=25ºC Ta=75ºC Ta=125ºC

0

10

20

30

40

50

60

70

80

0 2 4 6 8 10

ID = 0.5A

ID = 0.3A

Ta=25ºC

Fig.8 Gate Threshold Voltage vs. Channel Temperature

Gate

Thre

shold

Voltage :

VG

S(t

h) [V

]

Junction Temperature : Tj [°C]

Fig.9 Transconductance vs. Drain Current

Tra

nsconducta

nce :

gfs [S

]

Drain Current : ID [A]

Fig.10 Static Drain - Source On - State Resistance vs. Gate Source Voltage

Sta

tic D

rain

- S

ourc

e O

n-S

tate

Resis

tance

: R

DS

(on) [m

W]

Gate - Source Voltage : VGS [V]

7/11 2012.08 - Rev.B


Data SheetZDS020N60


0

1

10

100

0.01 0.1 1 10

Ta=125ºC Ta=75ºC Ta=25ºC

Ta= -25ºC

VGS= 1.0V

0

1

2

3

4

5

6

7

8

9

10

-50 0 50 100 150

VGS = 10V ID = 2A

Junction Temperature : Tj [ºC]

Fig.12 Static Drain - Source On - State Resistance vs. Junction Temperature

Sta

tic D

rain

- S

ourc

e O

n-S

tate

Resis

tance

: R

DS

(on) [m

W]

Fig.11 Static Drain - Source On - State Resistance vs. Drain Current(II)

Sta

tic D

rain

- S

ourc

e O

n-S

tate

Resis

tance

: R

DS

(on) [m

W]


8/11 2012.08 - Rev.B


Data SheetZDS020N60


1

10

100

1000

10000

0.01 0.1 1 10 100 1000

Ciss

Coss

Crss

Ta = 25ºC f = 1MHz VGS = 0V

1

10

100

1000

10000

0.01 0.1 1 10

Ta = 25ºC VDD = 450V VGS = 10V

RG = 10W

td(on)

tr

td(off)

tf

0

5

10

0 2 4 6 8 10 12 14

Ta = 25ºC VDD = 450V ID = 600mA

RG = 10W

Fig.13 Typical Capacitance vs. Drain - Source Voltage

Capacitance :

C [pF

]


Fig.15 Dynamic Input Characteristics

Gate

- S

ourc

e V

oltage :

VG

S [V

]

Total Gate Charge : Qg [nC]

Fig.14 Switching Characteristics

Sw

itchin

g T

ime : t [

ns]


0.01

0.1

1

10

0.0 0.5 1.0 1.5

VGS=0V

Ta=125ºC Ta=75ºC Ta=25ºC

Ta= -25ºC

Fig.16 Inverse Diode Forward Current vs. Source - Drain Voltage

Invers

e D

iode

Forw

ard

Curr

ent

: I S

[A

]

Source - Drain Voltage : VSD [V]

9/11 2012.08 - Rev.B


Data SheetZDS020N60

lMeasurement circuits

Fig.1-1 Switching Time Measurement Circuit Fig.1-2　Switching Waveforms

Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform

10/11 2012.08 - Rev.B


Data SheetZDS020N60

lDimensions (Unit : mm)

Dimension in mm/inches

SOP8

Patterm of terminal position areas

H E

e

A1

A2

A

c

D

bx S A

A

y s

S

E

A3

L1 Lp

e1

b2

l1

e

MIN MAX MIN MAXA - 1.75 - 0.069A1A2 1.40 1.60 0.055 0.063A3b 0.30 0.50 0.012 0.02c 0.10 0.30 0.004 0.012D 4.80 5.20 0.189 0.205E 3.75 4.05 0.148 0.159eHE 5.70 6.30 0.224 0.248L1 0.50 0.70 0.02 0.028Lp 0.65 0.85 0.026 0.033xy

MIN MAX MIN MAXb2 - 0.65 - 0.026e1l1 - 1.15 - 0.045

0.25 0.01

5.15 0.203

0.15 0.006

1.27 0.05

DIMMILIMETERS INCHES

0.15 0.0060.10 0.004

DIMMILIMETERS INCHES

11/11 2012.08 - Rev.B

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