- 1 -

- 2 -

1

1.1

1.2

1.3

1.4

1.5 (n-type p-type)

1.6 , ,

1.7 PN

1.8 (Transistor)

1.9 BJT(Bipolar Junction Transistor)

1.10 MOSFET

- 3 -

1.1

(H)

. 1.1

1 .

. 1.2 .

1.1

1.2

.

. (quantization)

. ,

.

(quantum state)

. ()

. , .

- 4 -

1.2

1.2

1.3

.

.

. N , N

.

- 5 -

1 2 N

1.3

1.3

, , TV 90%

(Si) . (O)

.

1.4

, 14 . n = 1

2 2 , n = 2 8

1.4

. n = 3 8

14 n = 3 4

. 4

.

. , n = 3 1.5

.

(valence band)

(conduction band). (forbidden

band). N 4N

, 4N .

- 6 -

1.4

1.5

1.6 (covalent bonding)

4 (n = 3) 4

.

, .

.

( )

.

. 1.5

Ev

Ec .

- 7 -

1.6

1.4

1.7

. 1.7(a)

, ,

. 1.7(a)

,

.

, , (

) (

) 1.7(b) ,

.

, .

13 .

(electric field) (drift),

(diffusion) . 1.7(c) ,

(hole) .

.

- 8 -

1.7

1.8 . 1.8(a)

.

.

. 1.8(b)

1.8(c). .

, .

1010

/cm3

.

1.8

1.5 (n-type p-type)

.

.

- 9 -

( .)

(doping) .

(intrinsic semiconductor)

,

PN , .

, .

. 1.1 4 (

10 n = 3

4 ), 3 5 . 5

(donor) , 3 (acceptor)

.

1.1

3 4 5

B C N

Al Si P

Ga Ge As

(P), (As), (Sb) 5 (

, )

1.9 (5

).

(Ed) .

Ed.

5 .

( )

. , Ed

. 5 5

. 5

. . 5

N .

(negative charge) N .

( 1018 /cm3) N+ , (

- 10 -

1014

/cm3) N

- . 5x10

22/cm

3.

1.9 N

(B), (Al) 3 1.10

P . 3 1

( 3 ) 1

(acceptor) .

Ea .

Ea , (

) Ea

. , 3

P . 1

.

- 11 -

1.10 P

1.6 , ,

,

.

( , Eg = Ec - Ev) 1.1 eV

1.1 eV ,

. ,

1 . .

5 - 8 eV (5 - 8

eV) .

.

- 12 -

1.11 ,

((drift, diffusion, R-G))

1.7 PN

PN ,

, AM

. PN

. PN 1.12 P N

. P B, Al

1 ,

B, Al

, .

N P, As

1 ,

. P N

P N (diffusion)

P N .

. N P

N P .

.

(depletion region)

(space charge region) .

( ), (drift)

- 13 -

. P N

.

(

1.13 ).

P N

1.12 PN

1.13 (VA=0) PN

PN

. (, P N

), N (N

) P N .

N P .

( ) .

P N

. P

N PN .

- 14 -

1.14 (VA>0) PN

PN .

1.15 N N

. N

PN . N

P . P

N

. 1.16

(

).

1.15 (VA

- 15 -

1.16 PN

1.8 (Transistor)

2 ,

(chip) 3 .

.

.

,

. (transistor) transferred resistor .

transferred , resistor .

2- 1.17

r. 4-

rt. gm.

, .

.

vc ( =

gm) gm*vc . RL

gm*vc*RL . gm*RL( > 1) .

v

+

-

Resistor

i=v/r

Trans-Resistor=Transistor

+

-

i= vc/rt = gm vc

vc

1.17

BJT(Bipolar Junction transistor) MOSFET(Metal Oxide

Semiconductor Field Effect Transistor) . BJT PN

- 16 -

, MOSFET

. BJT

MOSFET . BJT

(diffusion) , MOSFET

(drift) .

1.9 BJT(Bipolar Junction Transistor)

PN BJT .

PN 1.18 P N

N P . 1.18

P N ,

( ).

, (diffusion coefficient) . N

( 1000 ) . P

N . , N

(wide-base) N ,

(narrow-base) N . N

N (recombination) ,

, .

PN P

. P+ , N , P

, . BJT

. narrow base N

. ,

-

IC .

IB . IC -

- P+

, IB -

N P+ IC/IB

100 . ,

( = IC/IB).

BJT. BJT PNP ,

NP N NPN BJT . P+

(NPN ),

- 17 -

P -

. N

.

-xp xn

x'x'=0

p+ nnarrow-base

xc'

xcLp

p+ n

xc'

p BJTSCR

SCR

SCR

SCR

-xp xn

SCRp+-QNR n-QNR

0

JJp

Jp

Jn

Jn

-xp xn

SCRp+-QNR n-QNR

0

JJp

Jn

-xp xn

SCRp+-QNR

n-Q

NR0

JJp

Jn

SCR p-QNR

Base Current

CollectorCurrent

1.18 PN BJT

BJT 1.19

. , ,

. . (BJT

bipolar .

MOSFET .)

- . N

(P+ ) N

, , -

.

. IB .

.

. ,

.

100 . ,

- 18 -

100 . -

, - -

. (NPN BJT

)

. BJT .

- ,

IC , IC eVBE/VT . (

MOSFET ID (VG-VTH)2

.)

1.19 PNP BJT

1.10 MOSFET

MOSFET MOS . MOS

1.20 , .

. MOSFET

, .

1.20 MOS

1.21(a)

. MOS P EF

EV . P (substrate) 200 - 300 m

. .

- 19 -

100 , P

, (depletion) .

m .

, electron affinity .

(accumulation)" .

.

1.21 MOS

,

.

. (

) EC

EF . N . ,

(P

) ,

( 100 ) .

.

P (inversion)" .

(channel)

. , MOSFET

N MOSFET . N ,

P MOSFET .

(threshold voltgae)

- 20 -

. N P MOSFET 1 V, - 1 V .

1.22 MOS

.

MOSFET MOS .

MOS N . , P

N+ . N+

, N+

. 0.1 0.2

m .

MOSFET .

, P

.

N+

. , VG = 0 V ID = 0 mA .

. MOS

100

. N+

. ,

.

MOSFET field effect transistor .

,

,

.

. , VG > VTH(),

- VDS > 0 V ID > 0 .

P MOSFET N P+

.

. . N

- 21 -

MOSFET , .

1.23 N MOSFET

N MOSFET 1.24 .

. MOS

. .

1.24(b) VD ,

qVD . VGS -

VFB = Vox + (VD + 2 f ) . -(flat-band)

Vox (VD + 2 f )

.

.

VD . MOSFET

VDSat = VGS - VTH , VD -

VDSat .

, .

.

( N+ N

)

.

.

.

.

- 22 -

1.24 N MOSFET (a) (), (b)

(), (c)

1.25

.

. , ID

(A - B ). (B )

. VD .

(VGS - VTH)

. .

, (VGS -

VTH) .

1.25 MOSFET

- 23 -

1.26 1.25