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TRANSCRIPT
ADI ADI ADI
18
ADC
ADA4941-1
Rev. B Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700 www.analog.com
Fax: 781.461.3113 ©2006–2010 Analog Devices, Inc. All rights reserved.
DIS
4
3
2
1 IN
OUT–OUT+
V+
REF
FB
V–
7
8
5
6
0570
4-00
1
–60
–1400.1 101 1000
FREQUENCY (kHz)
DIS
TO
RT
ION
(d
Bc)
100
VO = 2V p-p
VO = 6V p-p
0570
4-04
5
–65
–70
–75
–80
–85
–90
–95
–100
–105
–110
–115
–120
–125
–130
–135
HD3
HD2 HD3
HD2
−110 dBc(100 KHz VOdm = 2 V )
10.2 nV/√Hz( G = 2)
2.2 mA(3 V )
24 MΩ
−3 dB 31 MHz (G = +2)
0.005% 300 ns 2 V
0.8 mV( )( G = 2)
2.7 V 12 V
3 mm x 3 mm LFCSP
1
2.
ADA4941-1 AD7687 AD7690 AD7691 1618 PulSAR® ADC
ADA4941-1 ADI XFCB18
AD4941-1 8 LFCSP 8 SOIC−40°C +125°C
ADA4941-118 ADC
22
ADC (SNR)
ADA4941-1 ( 5 V 0 V 3.9 V)
ADC
ADA4941-1
Rev. B | Page 2 of 24
2009 3 — 0 A
2006 4 — 0
................................................................................................... 1 ................................................................................................... 1
........................................................................................... 1 ................................................................................................... 1
........................................................................................... 2 ........................................................................................... 3
............................................................................. 6 ........................................................................................... 6
ESD ................................................................................... 6 ..................................................................... 7
.................................................................................. 8 ........................................................................................ 15
....................................................................... ....................................................................... 16
1 ....................................................... 32 ....................................................... 43 ....................................................... 5
................................................................................ 23
....................................................................... 17 .......................................................... 19
................................................................................................. 20 ......................................................................................... 20REF ........................................................................ 20
.............................................................. 20 ................................................................................ 20
3 Sallen-Key .............................................. 21AD7687 ADC ................................................................ 22
−2 ........................................................................... 22 ........................................................................................ 23
................................................................................ 23
Rev. B | Page 3 of 24
1
21 30 MHz 4.6 6.5 MHz
320/650 ns 22 V/μs 300 ns −116/−112 dBc −101/−98 dBc −75/−71 dBc 10.2 nV/√Hz 1.6 pA/√Hz
0.2 0.8 mV
1.0 μV/°C 0.1 0.4 mV 0.3 μV/°C 3 4.5 μA 0.1 μA 1.98 2.00 2.01 V/V −1 +1 %
1 5 ppm 24 MΩ 1.4 pF 0.2 1.9 V 81 105 dB
±2.90 ±2.95 V 25 mA 20 pF
2.7 12 V 2.2 2.4 mA 10 16 μA PSRR = VOS, dm/ΔVS, G = 4 86 100 dB 86 110 dB
≥1.5 V ≤1.0 V 5.5 8 μA 4 6 μA
0.7 μs 30 μs
ADA4941-1
TA = 25°C VS = 3 V OUT+ FB (G = 2) RL, dm = 1 kΩ REF = 1.5 V
-3 dB
0.005% /
RTO
(CMRR)
—
(PSRR) +PSRR −PSRR
DIS
DIS
DIS = DIS = DIS = DIS =
G = 4
20% VO, dm = 200 mV
IN REF IN REF
CMRR = VOS, dm/VCM, VREF = VIN, VCM= 0.2 V 1.9 V, G = 4
A1 A2
IN REF IN REF (+OUT − −OUT)/(IN − REF)
fC = 40 kHz, VO = 2 V , HD2/HD3 fC = 100 kHz, VO = 2 V , HD2/HD3 fC = 1 MHz, VO = 2 V , HD2/HD3 f = 100 kHz f = 100 kHz
VO = 0.1 V VO = 2.0 V + /− VO = 2 V VO = 2 V
Rev. B | Page 4 of 24
Table 2.
22 31 MHz 4.9 7 MHz 200/600 ns 24.5 V/μs 610 ns −118/−119 dBc −110/−112 dBc −83/−73 dBc 10.2 nV/√Hz 1.6 pA/√Hz
0.2 0.8 mV
1.0 μV/°C 0.1 0.4 mV 0.3 μV/°C 3 4.5 μA 0.1 μA 1.98 2 2.01 V/V −1 +1 %
1 5 ppm
24 MΩ 1.4 pF
0.2 3.9 V 84 106 dB
±4.85 ±4.93 V
25 mA 20 pF
2.7 12 V 2.3 2.6 mA 12 20 μA PSRR = VOS, dm/ΔVS, G = 4 87 100 dB 87 110 dB
≥1.5 V ≤1.0 V 5.5 8 μA 4 6 μA
0.7 μs 30 μs
ADA4941-1
TA = 25°C VS = 5 V OUT+ FB (G = 2) RL, dm = 1 kΩ REF = 2.5 V
-3 dB
0.005%/
RTO
(CMRR)
— (PSRR) +PSRR -PSRR
DIS
DIS
DIS = DIS = DIS = DIS =
G = 4
20% VO, dm = 200 mV
IN REFIN REF
CMRR = VOS, dm/VCM, VREF = VIN,VCM = 0.2 V 3.9 V, G = 4
A1 A2
IN REFIN REF(+OUT - -OUT)/(IN - REF)
fC = 40 MHz, VO = 2 V , HD2/HD3fC = 100 MHz, VO = 2 V , HD2/HD3fC = 1 MHz, VO = 2 V , HD2/HD3f = 100 kHzf = 100 kHz
VO = 0.1 VVO = 2.0 V+ /-VO = 2 VVO = 6 V
Rev. B | Page 5 of 24
3
23 32 MHz 5.2 7.5 MHz 200/650 ns 26 V/μs 980 ns −118/−119 dBc −109/−112 dBc −84/−75 dBc 10.2 nV/√Hz 1.6 pA/√Hz
0.2 0.8 mV
1.0 μV/°C 0.1 0.4 mV 0.3 μV/°C 3 4.5 μA 0.1 μA 1.98 2 2.01 V/V −1 +1 %
1 5 ppm 24 MΩ 1.4 pF −4.8 +3.9 V 85 105 dB
VS − 0.25 VS ± 0.14 V
25 mA 20 pF
2.7 12 V 2.5 2.7 mA 15 26 μA PSRR = VOS, dm/ΔVS, G = 4 87 100 dB 87 110 dB
≥ −3 V ≤ −4 V 7 10 μA 4 6 μA
0.7 μs 30 μs
ADA4941-1
TA = 25°C VS = ±5 V OUT+ FB (G = 2) RL, dm = 1 kΩ REF = 0 V
-3 dB
0.005% /
RTO
(CMRR)
—
(PSRR) +PSRR −PSRR
DIS
DIS
VO = 0.1 V VO = 2.0 V + /− VO = 2 V VO = 12 V
fC = 40 kHz, VO = 2 V , HD2/HD3 fC = 100 kHz, VO = 2 V , HD2/HD3 fC = 1 MHz, VO = 2 V , HD2/HD3 f = 100 kHz f = 100 kHz
A1 A2
IN REF IN REF (+OUT − −OUT)/(IN − REF)
IN REF IN REF
CMRR = VOS, dm/VCM, VREF = VIN, VCM= -4.8 V +3.9 V, G = 4
G = 4
20% VO, dm = 200 mV
DIS = DIS = DIS = DIS =
Rev. B | Page 6 of 24
4
5.
θJA θJC
8-Lead SOIC on 4-Layer Board 126 28 �C/W 8-Lead LFCSP with EP on 4-Layer Board 83 19 �C/W
2.5
0–40 120
AMBIENT TEMPERATURE (°C)
MA
XIM
UM
PO
WE
R D
ISS
IPA
TIO
N (
W)
2.0
1.5
1.0
0.5
–20 0 20 40 60 80 100
LFCSP
SOIC
0570
4-00
2
ADA4941-1
( 10 )
12 V 3
−65°C +125°C−40°C +85°C 300°C 150°C
θJA
PCB PCB
ADA4941-1TJ 150°C
ADA4941-1 150°C
(PD)
(VS) (IS)
RMS
θJA
θJA
PCB θJA
3 JEDEC 4 8 SOIC(126°C/W) 8LFCSP(83°C/W)
LFCSP PCBθJA
3. 4
ESD
ESD( ) 4000 VESD
ESD
Rev. B | Page 7 of 24
DIS
4
3
2
1 IN
OUT–OUT+
NOTES1. THE EXPOSED PAD IS NOT ELECTRICALLY CONNECTED TO THE DEVICE. IT IS TYPICALLY SOLDERED TO GROUND OR A POWER PLANE ON THE PCB THAT IS THERMALLY CONDUCTIVE.
V+
REF
FB
V–
7
8
5
6
0570
4-10
1
6.
1 FB 2 REF 3 V+ 4 OUT+ 5 OUT− 6 V− 7 DIS 8 IN
ADA4941-1
4.
Rev. B | Page 8 of 24
2
–16–15–14–13–12
1 1000
FREQUENCY (MHz)
NO
RM
AL
IZE
D C
LO
SE
D-L
OO
P G
AIN
(d
B)
10
–1–2–3
–11
–4–5–6–7–8–9
–10
10 100
VO, dm = 0.1V p-p
VS = +3V
VS = +5V
VS = ±5V05
704-
004
2
–16–15–14–13–12
0.1 100
FREQUENCY (MHz)
NO
RM
AL
IZE
D C
LO
SE
D-L
OO
P G
AIN
(d
B)
10
–1–2–3
–11
–4–5–6–7–8–9
–10
1 10
VS = +3VVO, dm = 2V p-p
VS = +5VVO, dm = 6V p-p
VS = ±5VVO, dm = 12V p-p
0570
4-00
7
2
–16–15–14–13–12
1 1000
FREQUENCY (MHz)
NO
RM
AL
IZE
D C
LO
SE
D-L
OO
P G
AIN
(d
B)
10
–1–2–3
–11
–4–5–6–7–8–9
–10
10 100
+25°C–40°C
+85°C
VO, dm = 0.1V p-p
0570
4-00
5
2
–16–15–14–13–12
0.1 100
FREQUENCY (MHz)
NO
RM
AL
IZE
D C
LO
SE
D-L
OO
P G
AIN
(d
B)
10
–1–2–3
–11
–4–5–6–7–8–9
–10
1 10
+25°C–40°C
+85°C
VO, dm = 6V p-p
0570
4-00
8
2
–151 1000
FREQUENCY (MHz)
NO
RM
AL
IZE
D C
LO
SE
D-L
OO
P G
AIN
(d
B)
10 100
RL, dm = 1kΩ
RL, dm = 5kΩRL, dm = 500Ω
10
–1–2–3–4–5–6–7–8–9
–10–11–12–13–14
VO, dm = 0.1V p-p
0570
4-00
6
2
–160.1 10
FREQUENCY (MHz)
NO
RM
AL
IZE
D C
LO
SE
D-L
OO
P G
AIN
(d
B)
RL, dm = 1kΩ
RL, dm = 5kΩRL, dm = 500Ω
VO, dm = 6V p-p10
–1–2–3–4–5–6–7–8–9
–10–11–12–13–14–15
1
0570
4-00
9
ADA4941-1
5.
6.
7.
8.
9.
10.
VS = 5 V RL, dm = 1 kΩ REF = 2.5 V DIS = LOW OUT+ FB (G = 2) TA = 25°C
Rev. B | Page 9 of 24
2
–16–15–14–13–12
1 100
FREQUENCY (MHz)
NO
RM
AL
IZE
D C
LO
SE
D-L
OO
P G
AIN
(d
B)
10
–1–2–3
–11
–4–5–6–7–8–9
–10
10
G = +4
G = +10
G = +2
G = –2
VO, dm = 0.1V p-p
0570
4-01
0
2
–16–15–14–13–12
1 10010 1000
FREQUENCY (MHz)
NO
RM
AL
IZE
D C
LO
SE
D-L
OO
P G
AIN
(d
B)
10
–1–2–3
–11
–4–5–6–7–8–9
–10
CL = 0pF
CL = 20pF
VO, dm = 0.1V p-p
0570
4-01
1
2
–16–15–14–13–12
1 10 1000
FREQUENCY (MHz)
NO
RM
AL
IZE
D C
LO
SE
D-L
OO
P G
AIN
(d
B)
10
–1–2–3
–11
–4–5–6–7–8–9
–10
VREF = 0.05V p-p
VS = +5V
VS = ±5V
VS = +3V
0570
4-01
2
2
–16–15–14–13–12
1 10 1000
FREQUENCY (MHz)
NO
RM
AL
IZE
D C
LO
SE
D-L
OO
P G
AIN
(d
B)
10
–1–2–3
–11
–4–5–6–7–8–9
–10
100
G = +4
G = +10
G = +2G = –2
VO, dm = 2V p-p
0570
4-01
3
2
–16–15–14–13–12
0.1 101 1000
FREQUENCY (MHz)
NO
RM
AL
IZE
D G
AIN
(d
B)
10
–1–2–3
–11
–4–5–6–7–8–9
–10
100
VO, dm = 2V p-p
VO, dm = 6V p-p
VO, dm = 0.1V p-p
0570
4-01
4
–70
–1400.1 101 1000
FREQUENCY (kHz)
DIS
TO
RT
ION
(d
Bc)
100
0570
4-01
5HD3
HD2HD2
RL = 2kΩ
RL = 1kΩ
RL = 500Ω
VO, dm = 2V p-pVREF = MIDSUPPLY
–80
–90
–100
–110
–120
–130
ADA4941-1
11.
12.
13. REF
14.
15.
16.
Rev. B | Page 10 of 24
–65
–75
–85
–95
–105
–115
–125
–13520 0
OUTPUT AMPLITUDE (V p-p)
DIS
TO
RT
ION
(d
Bc)
0570
4-01
6
VS = +5V
f = 10kHz
VS = ±5VVS = +3V
2 4 6 8 10 12 14 16 18
HD2
HD2
HD2
HD3
HD3
HD3
–60
–1400.1 101 1000
FREQUENCY (kHz)
DIS
TO
RT
ION
(d
Bc)
100
0570
4-01
7
–65
–70
–75
–80
–85
–90
–95
–100
–105
–110
–115
–120
–125
–130
–135
HD3
HD3
HD2
VS = +3V
VS = +5V
VS = ±5V
HD2
VO, dm = 2V p-pVREF = MIDSUPPLY
–60
–1400.1 101 1000
FREQUENCY (kHz)
DIS
TO
RT
ION
(d
Bc)
100
VO = 2V p-p
VO = 6V p-p
0570
4-04
5
–65
–70
–75
–80
–85
–90
–95
–100
–105
–110
–115
–120
–125
–130
–135
HD3
HD2 HD3
HD2
HD3
–65
–14520
OUTPUT AMPLITUDE (V p-p)
DIS
TO
RT
ION
(d
Bc)
0570
4-01
9
0
DIFFERENTIAL G = –2f = 10kHz
2 4 6 8 10 12 14 16 18
–75
–85
–95
–105
–115
–125
–135
VS = +5V VS = ±5VVS = +3V
HD2
HD3 HD3
–70
–1400.1 101 1000
FREQUENCY (kHz)
DIS
TO
RT
ION
(d
Bc)
100
0570
4-02
0
HD3 HD3
HD3 G = –2
G = +2
G = +4
VO, dm = 2V p-pVREF = MIDSUPPLY
–80
–90
–100
–110
–120
–130
HD2
HD2
0.12
–0.12
OU
TP
UT
VO
LT
AG
E (
V)
50ns/DIV
VOUT = 200mV p-p
0.08
0.04
0
–0.04
–0.08
CL = 0pF
CL = 20pF
0570
4-02
2
ADA4941-1
17. (G = +2) 20. (G = -2)
18. 21.
19. 22.
Rev. B | Page 11 of 24
0.12
–0.12
OU
TP
UT
VO
LT
AG
E (
V)
50ns/DIV
VOUT = 200mV p-p
0.08
0.04
0
–0.04
–0.08
VS = +3V
VS = +5V OR VS = ±5V
0570
4-01
8
8
–8
AM
PL
ITU
DE
(V
)
VS = ±5VVO, dm = 12V p-p
VO, dm
2 × VIN
ERROR = 2 × VIN – VO, dm
6
4
2
0
–2
–4
–6
2.4
–2.4
ER
RO
R (
mV
) 1
DIV
= 0
.005
%
1.8
1.2
0.6
0
–0.6
–1.2
–1.81μs/DIV
0570
4-02
3
12
–12
10
8
6
4
2
0
–2
–4
–6
–8
–10
OU
TP
UT
VO
LT
AG
E (
V)
1μs/DIV
INPUT × 2
OUTPUT
0570
4-02
4
8
–8
OU
TP
UT
VO
LT
AG
E (
V)
200ns/DIV
VS = ±5VVO, dm = 12V p-p
VS = ±2.5VVO, dm = 6V p-p
VS = ±1.5VVO, dm = 2V p-p
6
4
2
0
–2
–4
–6
0570
4-02
1
9
1
AM
PL
ITU
DE
(V
)
VS = +5VVO, dm = 6V p-p
VO, dm
2 × VIN
ERROR = 2 × VIN – VO, dm
8
7
6
5
4
3
2
1.2
–1.2
ER
RO
R (
mV
) 1
DIV
= 0
.005
%
0.9
0.6
0.3
0
–0.3
–0.6
–0.91μs/DIV
0570
4-02
6
8
–8
OU
TP
UT
VO
LT
AG
E (
V)
1μs/DIV
6
4
2
0
–2
–4
–6
INPUT × 2
OUTPUT
0570
4-02
7
ADA4941-1
23.
24. (0.005%) VS = ±5 V
25. VS = ±5 V
26.
27. (0.005%) VS = +5 V
28. VS = +5 V
Rev. B | Page 12 of 24
0
–1100.001 1000
FREQUENCY (MHz)
PS
RR
(d
B)
–10
–20
–30
–40
–50
–60
–70
–80
–90
–100
0.01 0.1 1 10 100
+PSRR
–PSRR
0570
4-02
8
3.5
1.0–40 120
TEMPERATURE (°C)
PO
WE
R S
UP
PL
Y C
UR
RE
NT
(m
A)
VS = ±5V
VS = +5V
VPD = VS–
VS = +3V
3.0
2.5
2.0
1.5
–20 0 20 40 60 80 100
0570
4-02
9
150
0–40 120
TEMPERATURE (°C)
DIF
FE
RE
NT
IAL
OU
TP
UT
OF
FS
ET
(μV
)
–20 0 20 40 60 80 100
0570
4-03
0
125
100
75
50
25
VOS_A1 10V
VOS_A2 = 3V
VOS_A1 = 3V
VOS_A2 = 5V
VOS_A1 = 5V
VOS_A2 = 10V
0.18
0.16
0.14
0.12
0.10
0.08
0.06
0.04–40 120
TEMPERATURE (°C)
OU
TP
UT
SA
TU
RA
TIO
N V
OL
TA
GE
WIT
H R
ES
PE
CT
TO
RA
IL (
V)
–20 0 20 40 60 80 100
0570
4-03
1
±5V SUPPLIES, POSITIVE RAIL
+5V SUPPLIES, POSITIVE RAIL
±5V SUPPLIES, NEGATIVE RAIL
+5V SUPPLIES, NEGATIVE RAIL
+3V SUPPLIES, POSITIVE RAIL
+3V SUPPLIES, NEGATIVE RAIL
2.5
–0.50.6 2.0
DISABLE INPUT VOLTAGE WITH RESPECT TO VS– (V)
SU
PP
LY
CU
RR
EN
T (
mA
)
ICC @ VS = ±5V
ICC @ VS = +5V
ICC @ VS = +3V2.0
1.5
1.0
0.5
0
0.8 1.0 1.2 1.4 1.6 1.8
0570
4-03
2
140
0
–200
–180
–160
–140
–120
–100 –80
–60
–40
–20 0 20 40 60 80 100
120
140
160
180
200
OFFSET VOLTAGE (μV)
FR
EQ
UE
NC
Y
120
100
80
60
40
20
VOS1MEAN = –8μVSTD. DEV = 47μV
VOS2MEAN = 11μVSTD. DEV = 20μV
NO. OF UNITS = 611
0570
4-03
3
29.
30.
31.
32.
33.
34.
ADA4941-1
Rev. B | Page 13 of 24
100
11 100M
FREQUENCY (Hz)
DIF
FE
RE
NT
IAL
OU
TP
UT
VO
LT
AG
E N
OIS
E (
nV
/√H
z)
10
10 100 1k 10k 100k 1M 10M
0570
4-03
4
2.65
2.35–40 125
TEMPERATURE (°C)
INP
UT
BIA
S C
UR
RE
NT
(μA
)
VS = ±5V
VS = +5V
VS = +3V
2.60
2.55
2.50
2.45
2.40
–25 –10 5 20 35 50 65 80 95 110
0570
4-03
5
3.3
2.7–40 120
TEMPERATURE (°C)
RE
FE
RE
NC
E B
IAS
CU
RR
EN
T (
μA)
–20 0 20 40 60 80 100
0570
4-03
6
3.2
3.1
3.0
2.9
2.8
REFERENCE IBIAS = 5V
REFERENCE IBIAS = 3V
REFERENCE IBIAS = 10V
28
011
FREQUENCY (Hz)
INP
UT
CU
RR
EN
T N
OIS
E (
pA
/√H
z)
M
26
24
22
20
18
16
14
12
10
8
6
4
2
10 100 1k 10k 100k
0570
4-03
7
3.5
1.5–0.5
10.0
INPUT VOLTAGE WITH RESPECT TO VS– (V)
INP
UT
BIA
S C
UR
RE
NT
(μA
)
0570
4-03
8
3.0
2.5
2.0
00.5
1.01.5
2.02.5
3.03.5
4.04.5
5.05.5
6.06.5
7.07.5
8.08.5
9.09.5
VS = ±5VVS = +5VVS = +3V
4.0
2.00 10.0
REFERENCE INPUT VOLTAGE WITH RESPECT TO VS– (V)
RE
FE
RE
NC
E IN
PU
T B
IAS
CU
RR
EN
T (
μA)
0570
4-03
9
3.5
3.0
2.5
0.51.0
1.52.0
2.53.0
3.54.0
4.55.0
5.56.0
6.57.0
7.58.0
8.59.0
9.5
VS = ±5V
VREF = VIN
VS = +5VVS = +3V
ADA4941-1
35.
36.
37. REF
38.
39.
40. REF REF
Rev. B | Page 14 of 24
14
010
DISABLE INPUT VOLTAGE WITH RESPECT TO VS– (V)
DIS
AB
LE
INP
UT
CU
RR
EN
T (
μA)
10
0–40 120
TEMPERATURE (°C)
DIS
AB
LE
D S
UP
PL
Y C
UR
RE
NT
(μA
)
–20 0 20 40 60 80 100
0570
4-04
0
8
6
4
2
G = 4RF = 1kΩRL =∞DIS = HIGH
VS = ±5V
VS = +5V
VS = +3V
0
12
10
8
6
4
2
1 2 3 4 5 6 7 8 9
VS = ±5V
0570
4-04
3
500m
V/D
IV
40μs/DIV
VPD
VO, dm
0570
4-04
1
500m
V/D
IV
40μs/DIV
VPD
VO, dm
0570
4-04
4
–40
–1100.1 1000
FREQUENCY (MHz)
ISO
LA
TIO
N (
dB
)
–50
–60
–70
–80
–90
–100
1 10 100
VIN = 50mV p-p
0570
4-04
2
100
0.00010.001 100
FREQUENCY (MHz)
IMP
ED
AN
CE
(Ω
)
VOP
VON
10
1
0.1
0.01
0.001
0.01 0.1 1 10
0570
4-02
5
ADA4941-1
41. 44.
42. 45.
43. 46.
Rev. B | Page 15 of 24
47. ( )
48. G = 2.4
49. +5V G=2
ADA4941-1ADC 47
ADA4941-1A1 A2 A11(FB)
A2 A1 VOP VON
REFREF OUT+
VOP = 3.5 V VON = 1.5 V2.5 V 2.5 V
( ) 2.0 V0 V
47 RG RF VG VREFVO, cm VO, dm
47
RF = 0 RG 3
48 VG VREF0 V RF RG A1 1.2
825 Ω 8 A1A1 A2
200 mV ±5 V 19.2 V
49 5 V A1 REF2.5 V 2.5 V
ADA4941-1
Rev. B | Page 16 of 24
VOP − VON = 5(VIN) − 5 V (8)
ADA4941-1
50. 5 V G = 5
51.
A1 VOP200 mV A1
VIN 4 V(VCC 1 V ) A149
7.6 V
50 G = 5 5 V RF RG A12.5 REF 2.5 V 2.5 V
A1 A2 508.4 V
51
9 VOP
(IB)(IOS) IBP, N = IB ± IOS/2 RS = RF
|| RG 9
10 VON
500 Ω A2RS_REF = 0 Ω
10
(VO_error,dm) VOP_error VON_error
ADA4941-1(CMRR) (PSRR)
(AVOL)
VOS_nom CMRR PSRR AVOL
Δ
VCM A1 INA2 REF
VS
VOUT
Rev. B | Page 17 of 24
RF = 1.0 kΩ, RG = 4.99 kΩ, RS_IN = 825 Ω, RS_REF = 0 Ω
7. 48 G = 2.4
VOP_error VON_error VO_dm_error
VOS_A1 0.1 mV +0.12 mV −0.12 mV +0.24 mV IBP_A1 3 μA +2.48 mV −2.48 mV −4.96 mV IBN_A1 3 μA −2.48 mV +2.48 mV +4.96 mV VOS_A2 0.1 mV 0 mV +0.2 mV +0.2 mV
V O_error, dm = 0.44 mV
RF = 0 Ω, RG = ∞, RS_IN = 0 Ω, RS_REF = 0 Ω
8. 49
VOP_error VON_error VO_dm_error
VOS_A1 0.1 mV +0.1 mV −0.1 mV +0.2 mV IBP_A1 3 μA +2.48 mV −2.48 mV −4.96 mV IBN_A1 3 μA −2.48 mV +2.48 mV +4.96 mV VOS_A2 0.1 mV 0 mV +0.2 mV +0.2 mV
VO_error, dm = 0.4 mV
RF = 1.02 kΩ, RG = 665 Ω, RS_IN = 402 Ω, RS_REF = 0 Ω
9. 50 G = 5
VOP_error VON_error VO_dm_error
VOS_A1 0.1 mV +0.25 mV −0.25 mV +0.5 mV IBP_A1 3 μA +1.21 mV −1.21 mV −2.4 mV IBN_A1 3 μA −1.21 mV +1.21 mV +2.4 mV VOS_A2 0.1 mV 0 mV +0.2 mV +0.2 mV
VO_error, dm = 0.7 mV
ADA4941-1
7 8 9 48 49 50
52.
52 ADA4941-1(A1)
(A2)
VON_n2
vn_A1 vn_A2 A1 A22.1 nV/√Hz
in_A1 in_A2 ip_A1 ip_A21 pA/√Hz
RS、RF RG
kT 4.2 x 10-21W-s
RS_REF REF
A110 nV/√Hz
10 11 12 48 49 50
Rev. B | Page 18 of 24
10. 48 G = 2.4
VOP (nV√Hz) VON (nV√Hz)
vn_A1 2.1 nV/√Hz 2.5 2.5 5 ip_A1 1 pA/√Hz 1 1 2 in_A1 1 pA/√Hz 1 1 2 √4 kTRF 4 nV/√Hz 4 4 8 √4 kTRG 9 nV/√Hz 1.8 1.8 3.6 √4 kTRS 3.6 nV/√Hz 4.4 4.4 8.8 vn_inverter 9.2 nV/√Hz 0 9.2 9.2 √RS_REF 0 0 0 0 ip_A2 × RS_REF 0 0 0 0
6.8 11.4 16.5
11. 49 G = 2
vn_A1 2.1 nV/√Hz 2.1 2.1 4.2 ip_A1 0 0 0 0 in_A1 0 0 0 0 √4 kTRF 0 0 0 0 √4 kTRG 0 0 0 0 √4 kTRS 0 0 0 0 vn_inverter 9.2 nV/√Hz 0 9.2 9.2 √RS_REF 0 0 0 0 ip_A2 × RS_REF 0 0 0 0
2.1 9.4 10
RF = 0 Ω, RG = ∞, RS = 0 Ω, RS_REF = 0 Ω.
12. 50 G = 5
vn_A1 2.1 nV/√Hz 5.25 5.25 10.5 ip_A1 1 pA/√Hz 1 1 2 in_A1 1 pA/√Hz 1 1 2 √4 kTRF 4 nV/√Hz 4 4 8 √4 kTRG 3.26 nV/√Hz 4.9 4.9 9.8 √4 kTRS 2.54 nV/√Hz 6.54 6.54 13.1 vn_inverter 9.2 nV/√Hz 0 9.2 9.2 √RS_REF 0 0 0 0 ip_A2 × RS_REF 0 0 0 0
10.7 14.1 23.1
RF = 1.02 kΩ, RG = 665 Ω, RS = 402 Ω, RS_REF = 0 Ω.
ADA4941-1
VO, dm (nV√Hz)
VOP (nV√Hz) VON (nV√Hz) VO, dm (nV√Hz)
VOP (nV√Hz) VON (nV√Hz) VO, dm (nV√Hz)
RF = 1.0 kΩ RG = 4.99 kΩ RS = 825 Ω RS_REF = 0 Ω
vn_inverter= A2 1 kΩ 500 Ω
Rev. B | Page 19 of 24
53. ADA4941-1
ADA4941-1 53
( )
fCR ( 531) fCR 50 MHz
A2
A1 15
VOP IN− A125 MHz A1
A1(1 + RF/RG)
10 5 MHz
ADA4941-1
Rev. B | Page 20 of 24
VOP = VIN )12(
VON = −VIN + 2 (REF )22( )
ADA4941-1
ADA4941-1ADC
RF
RG
REF
REFREF
REFREF
REFVON
VOP VON
VIN21 22
REFREF
REF10 V 2 V 7 V
4.5 V REF 4.5 V21 22 4.5 VOUT+ 4.5 V VON
0 7 V VOP7 V VON 2 V
5 V 2 V VOP 2 V VON 7 V
−5 V10 V
2
ADA4941-11 kΩ
±5 V REFOUT− +4 VDC 1 kΩ 4 mA
16 mW 32 mW
ADA4941-1
Rev. B | Page 21 of 24
1kΩ
1kΩ
500Ω
A2A1
REFIN
2
8
4
2.7nF
5
FB
+5V
–5V560pF
VS+
VS–
OUT+
+
–VO, dm
1
3
OUT–
VIN
562Ω562Ω562Ω
1.69kΩ
33Ω
33Ω
6
0570
4-05
8
0.1μF
0.1μF
2.7nF
3.9nF
10nF
0
–10010 100M
FREQUENCY (Hz)
VO
, d
m/V
IN (
dB
)
0570
4-05
9
–10
–20
–30
–40
–50
–60
–70
–80
–90
100 1k 10k 100k 1M 10M
VO, dm = 3V p-p
ADA4941-1
3 Sallen-Key
ADA4941-1 Sallen-Key3 ADC
54 3 Sallen-Key 100 kHz 1.69 kΩ A1
ADCRC
55
54. Sallen-Key 100 kHz
55. 54
ADA4941-1
Rev. B | Page 22 of 24
1kΩ
1kΩ
GND
500Ω
A2A1
ADA4941-1REF
IN
IN+
IN–
2
8
4
2.7nF
5
FB
+5V
+5V
–5V560pF
VS+
VS–
OUT+
1
3
OUT–
VIN
VIN0V TO 3V
VOUT
562Ω562Ω562Ω
1.69kΩ
33Ω
33Ω
6
0570
4-06
0
0.1μF
0.1μF
10μF
2.7nF
3.9nF
10nF
1/2AD8032
ADR443
4
8
1
4
0.1μF
0.1μF
3
3
4
62
2
1/2AD8032
AD7687
75
6
+5V
1kΩ
1kΩ
10μF10μF 0.1μF 0.1μF
VDD
GND
5
REF
1
2
1kΩ
1kΩ
RF1kΩ
RG1kΩ
500Ω500Ω
A2A1
REFIN
2
8
4
5
FB
+5V
–5V
VS+
VS–
OUT+
1
3
6
OUT–VIN
0570
4-06
1
+
–VO, dm
AD7687 ADC
ADA4941-1 AD7687 ADC56 54 Sallen-Key
56 0 V3 V
ADR443 3 VAD8032 AD7687
REF 6 VADA4941-1
1.5 V REF
−2
ADA4941-1 −2 −2+2
(A1)VIN VO, dm −
2 V/V ±5 V −257
−2
−2 RG
56. ADA4941-1 AD7687 ADC
57. −2
ADA4941-1
Rev. B | Page 23 of 24
CONTROLLING DIMENSIONS ARE IN MILLIMETERS; INCH DIMENSIONS(IN PARENTHESES) ARE ROUNDED-OFF MILLIMETER EQUIVALENTS FORREFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN.
COMPLIANT TO JEDEC STANDARDS MS-012-AA
0124
07-A
0.25 (0.0098)0.17 (0.0067)
1.27 (0.0500)0.40 (0.0157)
0.50 (0.0196)0.25 (0.0099)
45°
8°0°
1.75 (0.0688)1.35 (0.0532)
SEATINGPLANE
0.25 (0.0098)0.10 (0.0040)
41
8 5
5.00 (0.1968)4.80 (0.1890)
4.00 (0.1574)3.80 (0.1497)
1.27 (0.0500)BSC
6.20 (0.2441)5.80 (0.2284)
0.51 (0.0201)0.31 (0.0122)
COPLANARITY0.10
0903
08-B
1
EXPOSEDPAD
(BOTTOM VIEW)
0.50BSC
PIN 1INDICATOR0.50
0.400.30
TOPVIEW
12° MAX 0.70 MAX0.65 TYP0.90 MAX
0.85 NOM 0.05 MAX0.01 NOM
0.20 REF
1.891.741.59
4
1.601.451.30
3.253.00 SQ2.75
2.952.75 SQ2.55
5 8
PIN 1INDICATOR
SEATINGPLANE
0.300.230.18
0.60 MAX
0.60 MAX
FOR PROPER CONNECTION OFTHE EXPOSED PAD, REFER TOTHE PIN CONFIGURATION ANDFUNCTION DESCRIPTIONSSECTION OF THIS DATA SHEET.
ADA4941-1YRZ −40°C +125°C R-8 98 ADA4941-1YRZ-RL −40°C +125°C R-8 2,500 ADA4941-1YRZ-R7 −40°C +125°C R-8 1,000 ADA4941-1YCPZ-R2 −40°C +125°C CP-8-2 250 H0C ADA4941-1YCPZ-RL −40°C +125°C CP-8-2 5,000 H0C ADA4941-1YCPZ-R7 −40°C +125°C CP-8-2 1,500 H0C
8 SOIC_N 8 SOIC_N 8 SOIC_N8 LFCSP_VD 8 LFCSP_VD 8 LFCSP_VD
1 Z = RoHS
59. 8 [LFCSP_VD]3 mm x 3 mm (CP-8-2)
mm
58. 8 [SOIC_N](R-8)mm (inches)