1 e xploring the n anolandscape scanning probe microscopy
TRANSCRIPT
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The Nanoscale
• Atomic diameter ~ 0.3 nm = 3 Å
• Microelectronics interconnect ~ 0.25 µm– http://www.intel.com/technology//itj/q31998/articles/art_1.htm
• Red blood cell (5µm)
5
History
• Topografiner
• Tunneling through a controllable vacuum gap
• Scanning Tunneling Microscope
• Atomic Force Microscope (Scanning Force Microscope)
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Operation of a Scanning Probe Microscope
• Scanning with sub-Angstrom precision• Probe detection (e.g., current, force, position, …)• Electronics processing• Computer control• Image processing• Vibration isolation• Environmental control (e.g., vacuum, atmosphere,
fluid; temperature)
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Tunneling
• One-dimensional tunneling
• Density of electronic statesof sample and tip
2m1/ 2
2
I So 2
To 2
e 2d
So
= sample wavefunction
To
= tip wavefunction
= workfunction
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Forces
non-contact Distance
tip to sample separation
repulsive force
attractive force
contact
Force
Trace
Retrace
F k x
Typical:
k 0.3N / m
x = 10nm
F = 3nN
Contact vs. non-contact modes ...Forces to atto-newton (10-18 N) range ...
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Semiconductor Surfaces - Si(100)
Tilted dimer
SymmetricDimer
Unreconstructed
L) OccupiedR) Unoccupied
Hamers, 1986
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Temperature-dependent Reconstructions
• Low-temperature Si(100)-c(42) vs. (2 1)– Domain boundaries, p(2 2) regions
Wolkow, 1992
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Fractional Images
• Probing atomic orbitals– Frequency-modulated
Atomic Force Microscopy
– Si tip / Si(111)-77
Si atom
Giessibl, 2000
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Coatings - Colloidal Latex Particles
VacancyRecoveryFaulted LayerInterstitial DefectLine DefectOrientation ChangeBrennan, 2000
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Spectroscopy ~ on the Nanoscale
• Beam techniques average over surface species• SPM techniques measure density of states related
to the atom (or molecule) under the tip– electronic spectrum - measure dI/dV [or (dI/dV)/(I/V)]
Hamers, 1986
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Electronic SpectroscopyAtom by Atom
• Reconstructed Si(100)-21 surface– Dimers– Occupied electronic states of dimers (between atoms)
– Unoccupied electronic states of dimers (away from atoms)
Hamers, 1986
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Defects
• Atomic-sized defects– Al/Si(111)-√3√3 structure
– different electronic states
Hamers, 1988
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H-enhanced diffusion of Pt atoms
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Horch, 1999
an STM movie ...
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Electrostatic Force Microscopy (EFM)
• Application– Topography of integrated circuit
– Monitoring an active integrated circuit
Digital Instruments, www.di.com
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Magnetic Force Microscopy (MFM)
• Magnetic tip interaction with surface• Application: Disk drive
– Morphology
– Magnetic structure
Digital Instruments, www.di.com
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Scanning Chemical Microscopy
• Measure chemical interaction between the tip and sample
• Functionalize the tip with hydrophobic or hydrophilic species
• Scan over surface and measure adhesion force or friction force
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Ballistic Electron Emission Microscopy - BEEM
• Three-terminal setup• Probe potential barrier at interface between metal
and semiconductor• Electrons are forward-focused without scattering
(ballistic)
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Moving Atoms
• Xe– Physisorbed noble gas - (low temperature)
• Fe– Quantum “Corrals”
Eigler, 1991 / Crommie, 1993
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Confined Electrons
• Reflections of free electron (waves) at boundaries
• Standing waves solutions
• One-dimensional free electron solution (infinite barrier)
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Nanoelectronics
• Nanoscale channels
• Nanoscale objects
• Currents - description based on quantum-mechanical transport