14cl40 irgs14c40l

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wwwirfcom 4/7/2000 IRGS14C40L IRGSL14C40L IRGB14C40L Ignition IGBT Page 1 IGBT with on-chip Gate-Emitter and Gate-Collector clamps Features Most Rugged in Industry Logic-Level Gate Drive > 6KV ESD Gate Protection Low Saturation Voltage High Self-clamped Inductive Switching Energy Description The advanced IGBT process family includes a MOS gated, N-channel logic level device which is intended for coil-on-plug automotive ignition applications and small-engine ignition circuits Unique features include on-chip active voltage clamps between the Gate-Emitter and Gate-Collector which provide over voltage protection capability in ignition circuits Collector Emitter Gate R2 R1 TERMINAL DIAGRAM NOTE: IRGS14C40L is available in tape and reel Add a suffix of TRR or TRL to the part number to determine the orientation of the device in the pocket, ie, IRGS14C40LTRR or IRGS14C40LTRL JEDEC TO-220AB IRGB14C40L JEDEC TO-262AA IRGSL14C40L JEDEC TO-263AB IRGS14C40L BV CES = 370V min, 430V max I C @ T C = 110°C = 14A V CE(on) typ= 12V @7A @25°C I L(min) =115A @25°C,L=47mH Absolute Maximum Ratings Parameter Max Unit Condition V CES Collector-to-Emitter Voltage Clamped V R G = 1K ohm I C @ T C = 25°C Continuous Collector Current 20 A V GE = 5V I C @ T C = 110°C Continuous Collector Current 14 A V GE = 5V I G Continuous Gate Current 1 mA I Gp Peak Gate Current 10 mA t PK = 1ms, f = 100Hz V GE Gate-to-Emitter Voltage Clamped V P D @ T C = 25°C Maximum Power Dissipation 125 W P D @ T = 110°C Maximum Power Dissipation 54 W T J Operating Junction and - 40 to 175 °C T STG Storage Temperature Range - 40 to 175 °C V ESD Electrostatic Voltage 6 KV C = 100pF, R = 1.5K ohm I L Self-clamped Inductive Switching Current 11.5 A L = 4.7mH, T = 25°C Thermal Resistance Parameter Min Typ Max Unit Rθ JC Thermal Resistance, Junction-to-Case 1.2 Rθ JA Thermal Resistance, Junction-to-Ambient 40 °C/W (PCB Mounted, Steady State) Zθ JC Transient Thermal Impedance, Juction-to-Case (Fig.11) PD - 93891A

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www.irf.com 4/7/2000IRGS14C40LIRGSL14C40LIRGB14C40LIgnition IGBTPage 1IGBT with on-chip Gate-Emitter and Gate-Collector clampsFeaturesMost Rugged in IndustryLogic-Level Gate Drive> 6KV ESD Gate ProtectionLow Saturation VoltageHigh Self-clamped Inductive Switching EnergyDescriptionThe advanced IGBT process family includes aMOS gated, N-channel logic level device whichis intended for coil-on-plug automotive ignitionapplications and small-engine ignition circuits.Unique features include on-chip active voltageclamps between the Gate-Emitter andGate-Collector which provide over voltageprotection capability in ignition circuits.CollectorEmitterGateR2R1TERMINAL DIAGRAMNOTE: IRGS14C40L is available in tape and reel.Add a suffix ofTRR or TRL to the part number to determine the orientation of thedevice in the pocket, i.e, IRGS14C40LTRR or IRGS14C40LTRL.JEDEC TO-220ABIRGB14C40LJEDEC TO-262AAIRGSL14C40LJEDEC TO-263ABIRGS14C40LBVCES = 370V min, 430V maxIC @ TC = 110C = 14AVCE(on) typ= 1.2V @7A @25CIL(min)=11.5A@25C,L=4.7mHAbsolute Maximum RatingsParameter Max Unit ConditionVCESCollector-to-Emitter VoltageClamped V RG = 1K ohmIC @ TC = 25C Continuous Collector Current20 A VGE = 5VIC @ TC = 110C Continuous Collector Current 14 A VGE = 5VIGContinuous Gate Current1 mAIGp Peak Gate Current 10 mA tPK = 1ms, f = 100HzVGEGate-to-Emitter Voltage Clamped VPD @ TC = 25C Maximum Power Dissipation 125 WPD @ T = 110C Maximum Power Dissipation 54 WTJOperating Junction and- 40 to 175 CTSTGStorage Temperature Range - 40 to 175 CVESDElectrostatic Voltage 6 KV C = 100pF, R = 1.5K ohmILSelf-clamped Inductive Switching Current 11.5 A L = 4.7mH, T = 25CThermal ResistanceParameter Min Typ MaxUnitRJCThermal Resistance, Junction-to-Case 1.2RJAThermal Resistance, Junction-to-Ambient 40 C/W(PCB Mounted, Steady State)ZJCTransient Thermal Impedance, Juction-to-Case(Fig.11)PD - 93891Awww.irf.com 4/7/2000IRGS14C40LIRGSL14C40LIRGB14C40LIgnition IGBTPage 2Off-State Electrical Charasteristics @ TJ = 25C (unless otherwise specified)Parameter Min Typ Max Unit Conditions FigBVCESCollector-to-Emitter Breakdown Voltage 370 400 430 V R G = 1K ohm, I C=7A, VGE = 0VBVGESGate-to-Emitter Breakdown Voltage 10 12 V I G=2m AI CESCollector-to-Emitter Leakage Current 15 A R G=1K ohm, VCE = 250V100 A R G=1K ohm, VCE = 250V, TJ =150C BVCEREmitter-to-Collector Breakdown Voltage 24 28 V I C = -10m AR 1Gate Series Resistance 75 ohmR 2Gate-to-Emitter Resistance 10 20 30 K ohmOn-State Electrical Charasteristics@ TJ = 25C (unless otherwise specified)Parameter Min Typ Max Unit Conditions Fig1.2 1.40 I C = 7A, VGE = 4.5VVCE(on)Collector-to-Emitter Saturation1.35 1.55 V I C = 10A, VGE = 4.5V 1 Voltage 1.35 1.55 I C = 10A, VGE = 4.5V, TC= -40oC 21.5 1.7 I C = 14A, VGE = 5.0V, TC= -40oC 41.55 1.75 I C = 14A, VGE = 5.0V1.6 1.8 I C = 14A, VGE = 5.0V, TC=150oCVGE(th)Gate Threshold Voltage 1.3 1.8 2.2 V VCE = VGE, I C = 1 m A, TC=25oC 3, 50.75 1.8 VCE = VGE, I C = 1 m A, TC=150oC 8gfs Transconductance 10 15 19 S VCE = 25V, I C = 10A, TC=25oCI CCollector Current 20 A VCE = 10V, VGE = 4.5VSwitching Characteristics @ TJ = 25C (unless otherwise specified)Parameter Min Typ Max Unit Conditions FigQ gTotal Gate charge 27 I C = 10A, VCE=12V, VGE=5V 7Q geGate - Emitter Charge2.5 nC I C = 10A, VCE=12V, VGE=5V 15Q gc Gate - Collector Charge10 I C = 10A, VCE=12V, VGE=5Vt d(on) Turn - on delay time 0.6 0.9 1.35 VGE=5V, RG=1K ohm, L=1mH, VCE=14V 12t rRise time 1.6 2.8 4 s VGE=5V, RG=1K ohm, L=1mH, VCE=14V 14t d(off) Turn - off delay time 3.7 6 8.3 VGE=5V, RG=1K ohm, L=1mH, VCE=300VC iesInput Capacitance 550 825 VGE=0V, VCE=25V, f=1M H zC oesOutput Capacitance 100 150 pF VGE=0V, VCE=25V, f=1M H z 6C res Reverse Transfer Capacitance 12 18 VGE=0V, VCE=25V, f=1M H z25 L=0.7m H, TC=25CI LSelf-Clamped 15.5 A L=2.2m H, TC=25C 9Inductive Switching Current 11.5 L=4.7m H, TC=25C 1016.5 L=1.5m H, TC=150C 137.5 L=4.7m H, TC=150C 146 L=8.7m H, TC=150CTJ =150oC,t SCShort Circuit Withstand Time 120 s VCC = 16V, L = 10H 14R G = 1K ohm, VGE = 5Vwww.irf.com 4/7/2000IRGS14C40LIRGSL14C40LIRGB14C40LIgnition IGBTPage 3Fig.4 - Typical VCE vs TJVGE=4.5V1.01.11.21.31.41.51.6-50 0 50 100 150 200TJ (C)V C E ( V )IC = 7AIC = 10AFig.3 - Transfer CharacteristicsVCE=20V; tp=20s01020304050607080901000 2 4 6 8 10VGE (V)I C E ( A )TJ =25CTJ = 125CFig.1 - Typ. Output CharacteristicsTJ=25C01020304050600 1 2 3 4 5 6VCE (V)I C ( A )VGE = 10 VVGE = 5.0VVGE = 4.5VVGE = 4.0VVGE = 3.7VFig.2 - Typ. Output CharacteristicsTJ=125C01020304050600 1 2 3 4 5 6VCE (V)I C ( A )VGE = 10 VVGE = 5.0VVGE = 4.5VVGE = 4.0VVGE = 3.7Vwww.irf.com 4/7/2000IRGS14C40LIRGSL14C40LIRGB14C40LIgnition IGBTPage 4Fig.7 - Typ. Gate Charge vs VGEIC=10A; VCE=12V; VGE=5V0.00.51.01.52.02.53.03.54.04.55.05.50 5 10 15 20 25 30QG, Total Gate Charge (nC)V G E ( V )Fig.6 - Typ. Capacitance vs VCEVGE=0V; VCE=25V; f=1MHz11010010001 10 100VCE (V)C a p a c i t a n c e ( p F )C iesC resC oesFig.8 - Typical VCE vs VGE024681012141618202.5 3 3.5 4 4.5VGE (V)V C E ( V )IC= 7A; 125CIC = 7A;25CIC=10A; 125CIC=10A;25CFig.5 - Typical VGE(th) vs TJIC=1mA1.01.21.41.61.82.02.2-50 0 50 100 150 200TJ (C)V G E ( t h ) ( V ) www.irf.com 4/7/2000IRGS14C40LIRGSL14C40LIRGB14C40LIgnition IGBTPage 50.010.1 1 100.00001 0.0001 0.001 0.01 0.11Notes:1. Duty factor D = t / t2. Peak T =P xZ + T1 2J DM thJC CPttDM12t, Rectangular Pulse Duration (sec)Thermal Response(Z )1thJC0.010.020.050.100.20D = 0.50SINGLE PULSE(THERMAL RESPONSE)Fig.11 - Transient Thermal Impedance, Junction-to-CaseFig.9 - Self-clamp Avalance Current vs Inductance @ 25C101520253035400 1 2 3 4 5Inductance (mH)O p e n - s e c o n d a r y C u r r e n t ( A )MinimumTypicalFig.10 - Self-clamp Avalance Current vs Inductance @ 150C4681012141618200 2 4 6 8 10Inductance (mH)O p e n - s e c o n d a r y C u r r e n t ( A )MinimumTypicalwww.irf.com 4/7/2000IRGS14C40LIRGSL14C40LIRGB14C40LIgnition IGBTPage 6Fig.13 - Self-clamped Inductive Switching WaveformL=4.7mH; TC=25C; used circuit in Fig.14024681012-2.E-05 -1.E-05 0.E+00 1.E-05 2.E-05 3.E-05 4.E-05 5.E-05 6.E-05timeI C E ( A )-1000100200300400500V c l a m p ( V )V clampI CEFig.12 - Switching Waveform for Time MeasurementVGE= 5V; RG= 1K; L= 1mH; VCE= 14V; used circuit in Fig.14-50050100150200250300350400450-14 -10 -6 -2 2 6 10 14t (s)V c l a m p ( V )-2-1012345678V G E ( V )Vcl (measured)VClampVGEt d (o f f )t rwww.irf.com 4/7/2000IRGS14C40LIRGSL14C40LIRGB14C40LIgnition IGBTPage 71KVCCDUT0LFig.15 - Gate Charge CircuitFig.14 - Test CircuitL0.47 D.U.T.Ice1Kwww.irf.com 4/7/2000IRGS14C40LIRGSL14C40LIRGB14C40LIgnition IGBTPage 810.16 (.400)REF.6.47 (.255)6.18 (.243)2.61 (.103)2.32 (.091)8.89 (.350) REF.- B -1.32 (.052)1.22 (.048)2.79 (.110)2.29 (.090)1.39 (.055)1.14 (.045)5.28 (.208)4.78 (.188)4.69 (.185)4.20 (.165)10.54 (.415)10.29 (.405)- A -21315.49 (.610)14.73 (.580)3X0.93 (.037)0.69 (.027)5.08 (.200)3X1.40 (.055)1.14 (.045)1.78 (.070)1.27 (.050)1.40 (.055) MAX.NOTES: 1DIMENSIONS AFTER SOLDER DIP. 2DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3CONTROLLING DIMENSION : INCH. 4HEATSINK & LEAD DIMENSIONS DO NOT INCLUDE BURRS.0.55 (.022)0.46 (.018)0.25 (.010)MBAM MINIMUM RECOMMENDED FOOTPRINT11.43 (.450)8.89 (.350)17.78 (.700)3.81 (.150)2.08 (.082) 2XLEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE2.54 (.100) 2XTO-263ABPackage OutlineDimensions are shown in millimeters (inches)www.irf.com 4/7/2000IRGS14C40LIRGSL14C40LIRGB14C40LIgnition IGBTPage 9344TRRFEED DIRECTION1.85 (.073)1.65 (.065)1.60 (.063)1.50 (.059)4.10 (.161)3.90 (.153)TRLFEED DIRECTION10.90 (.429)10.70 (.421)16.10 (.634)15.90 (.626)1.75 (.069)1.25 (.049)11.60 (.457)11.40 (.449)15.42 (.609)15.22 (.601)4.72 (.136)4.52 (.178)24.30 (.957)23.90 (.941)0.368 (.0145)0.342 (.0135)1.60 (.063)1.50 (.059)13.50 (.532)12.80 (.504)330.00(14.173)MAX.27.40 (1.079)23.90 (.941)60.00 (2.362)MIN.30.40 (1.197)MAX.26.40 (1.039)24.40 (.961)NOTES :1. COMFORMS TO EIA-418.2. CONTROLLING DIMENSION: MILLIMETER.3. DIMENSION MEASURED @ HUB.4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.TO-263ABPackage Outline in Tape and ReelDimensions are shown in millimeters (inches)www.irf.com 4/7/2000IRGS14C40LIRGSL14C40LIRGB14C40LIgnition IGBTPage 10TO-262AA Package OutlineDimensions are shown in millimeters (inches)www.irf.com 4/7/2000IRGS14C40LIRGSL14C40LIRGB14C40LIgnition IGBTPage 11LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE 4 - DRAIN- B -1.32 (.052)1.22 (.048)3X0.55 (.022)0.46 (.018)2.92 (.115)2.64 (.104)4.69 (.185)4.20 (.165)3X0.93 (.037)0.69 (.027)4.06 (.160)3.55 (.140)1.15 (.045) MIN6.47 (.255)6.10 (.240)3.78 (.149)3.54 (.139)- A -10.54 (.415)10.29 (.405)2.87 (.113)2.62 (.103)15.24 (.600)14.84 (.584)14.09 (.555)13.47 (.530)3X1.40 (.055)1.15 (.045)2.54 (.100)2X0.36(.014)MB A M41 23NOTES: 1DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 2CONTROLLING DIMENSION : INCH 4HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.TO-220AB Package OutlineDimensions are shown in millimeters (inches)Note:For the most current drawings please refer to the IR website at: http://www.irf.com/package/