22fdxtm enabling iot growth - meptecmeptec.org/resources/10 - dry.pdf · 22fdxtm enabling iot...

22FDXTM Enabling IoT Growth

Tim Dry, (for Jamie Schaeffer, Ph.D). Leading Edge Product Line Management GLOBALFOUNDRIES

The First Truly Global Foundry

2

5 Manufacturing Centers on 3 Continents

Singapore Dresden, Germany

Malta, New York

Burlington, Vermont

East Fishkill, New York

REVENUE

Company Highlights

3

East Fishkill

Singapore

Dresden Malta

Burlington

300mm

200K Wafers/Mo

200mm

133K Wafers/Mo

MORE THAN

FAB LOCATIONS FAB CAPACITY

~6B* 25,000 Patents &

Applications

2nd Largest Foundry

Trusted Foundry

*Based upon analysts’ estimates

250

Customers

18,000

Employees

Typical IoT Edge Node Chipset

What Will it Take to Make IoT Take Off?

GLOBALFOUNDRIES 4

Today: 20+ components

on MCM/PCB

Security Integration

Future IoT Edge Nodes

Power Cost

IoT Edge Nodes 2015 Specification

Low-End Low MCU, Analog

Mid-Range Mid/High-end MCU

High-End MPU

Examples Smart lighting, Building sensors

Smart meters, Health and fitness monitors

Smart glasses, Smart Watches

Primary Requirements

Cost Power

Power Performance Cost

Performance Power Cost

Processing Requirements

Low end <24MHz e.g. 8 bit, ARM CM0, ARC APEX

Mid end <240MHz e.g. 16/32bit ARM CM0, 4F, 7, MIPs, ARC

High end <1.5Ghz e.g. 32/64bit ARM CM A7, MIPS, HMI/Image processing

Memory OTP/MTP/eNVM/SRAM <128Kbyte Flash

eNVM 128K to 4MByte Flash External NOR, NAND Flash and DDR Memory

Connectivity 802.15.4/Thread/ BT Smart/ <1GHz

802.15.4/ZigBee / BT Smart/<1GHz

3G/4G/LTE, WiFi / BT / 802.15.4 (Off-chip 2015)

Power Active: 50uA/MHz Sleep: 1uA (tbc) Stop: 10nA (tbc)

Active: 350uA/MHz (CPU) Sleep: 10uA Stop: 300nA

Active: 500uA/MHz Sleep: 100uA Stop: 500nA

Battery life 2015 2years Smoke detector Gas Meter 10years Wristband 3 days

Smart watch 4 days

GLOBALFOUNDRIES Confidential 5




High-End MPU





Cost Power
















Smart watch 4 days


Connected Edge Node MCU + RF Mid/High End

November 14, 2015

CM0+ Peripherals,

GPIO

Clocks, OCO Power modes

eNVM, MTP Density, speed,

reliability, duration

LV SRAM

Multi-Standard Radio(s)

BT Smart, 802.15.4

HMI: Audio Touch Display

Color TFT LCD

FIFO

Customer Own IP

PHY

Security Authorization, Crypto,

Unique ID, Key gen and vault,

PMIC [DC-DC, LDOs] Power Islands

Network-on-Chip (NOC)

Big Little: Big: M4F/7F Little: M0+

On Chip Oscillator Fast wake Clock trees

On chip Power supplies to

“Power Islands”. In conjunction with NoC and

clocks

Sensor hub with “always listening” sensor interface that runs at low power while rest

of system asleep, and

wakes up system on correct events

Low Voltage SRAM.

Low leakage Retention area/

NoC

Sensor Hub

Reduced Total System power allows more

power for Transmit and

Receive, enabling better Link budget and

robust communications

CM4/7F Peripherals,

GPIO

Always listening

Enabling Low power

Total System Power – Active and Standby

6/11/2015 9

Fast wake up OCO

Faster process time

Power modes Retain SRAM Low leakage memories

Reduce Vdd HW accelerators, intelligent peripherals, offload engines and sensor hubs

Reduce static power

Reduce RF power

Tim Dry

28nm Super low power

55, 40, 28nm Ultra low power

55nm, 40nm Ultra low leakage

High Duty Cycle Low Static Power

High Performance Low Dynamic Power

Duty Cycle Sleepy Chatty

Processing Performance

High

Low

Varying Requirements of IoT Edge Nodes


Wireless Smart Meters

Wildlife Camera

Building Sensors

High-end Wearables

IP Security Cameras

Trackers (Asset, People..) Low-end

Wearables Health and Fitness

Monitors

Smart Lighting

Drones, Robotics,

3D Printing

Edge Gateways

Home Automation

Duty Cycle Low

Standby: 83%

Active: 17%

Duty Cycle High

Active: 95%

Standby: 5%

Introducing 22FDX™ Platform

•  Industry’s first 22nm fully-depleted silicon-on-insulator (FD-SOI) technology

•  Delivers FinFET-like performance and power-efficiency at 28nm cost

•  Ultra-lower power consumption with 0.4 volt operation

•  Software-controlled transistor body-biasing for flexible trade-off between performance and power

•  Integrated RF for reduced system cost and back-gate feature to reduce RF power up to ~50%

•  Enables applications across mobile, IoT and RF markets

GLOBALFOUNDRIES 11

Ultra-thin Buried Oxide Insulator

Fully Depleted Channel for Low Leakage

FD-SOI Planar process similar to bulk

  70% lower power than 28HKMG   20% smaller die than 28nm bulk planar   20% lower die cost than 16/14nm

Body-Biasing Provides Greatest Design Flexibility


-2V to +2V Body-Biasing

•  Forward BB (FBB) enables low voltage operation down to 0.4v without speed loss

•  Reverse BB (RBB) enables low leakage down to 1pA/micron

•  Dynamic body biasing enables active tradeoff of performance vs. power

•  Improve within die or die-to-die uniformity

•  Post-Silicon Tuning/Trimming

Body-Biasing Enables Power/Performance Trade-off


Max Frequency

Leakage Power

Reverse Body Bias (RBB)

Forward Body Bias (FBB)

Maximum Performance Operating Mode

Minimum Leakage In Standby Mode

Body-Bias Provides a New Dimension to Optimize for Power and Performance

Rel

ativ

e Le

akag

e P

ower

Relative Active Power

Best perf./watt 1x Fmax

0 0.5 1.5 2

0.1

0.01

1

Best performance 1.6x Fmax

No BB

Lowest total power 0.5x Fmax

2.5

10

100

-60mV Vt Fwd Body-Bias

+60mV Vt Rev Body-Bias

Vdd+100mV

Vdd-100mV 1x Fmax

22FDX™ Benefits RF Applications

•  RF/Analog designers use Gate Length (Lg) greater than Lg (min) to improve matching and gain.

–  FD device gives higher self gain than bulk at the same Lg

–  FD enables shorter (20nm) Lg that increases gM and fT performance

–  HKMG enables low Tinv and high channel charge

•  Planar structure allows for lower Rsd and Rg compared to Finfet

•  Local Back Gate bias give dynamic control of threshold voltage for innovative circuits

•  SOI structure allows more flexible layout reducing overall parasitism at larger pitch


The plot indicates that 22FDX has superior self gain and higher fT than 28nm bulk at larger Lg

from 20 – 100nm. (For a Gm/I =15, a moderate inversion)

RF Circuit Benefits for 22FDX™

•  22FDX is an Independent-Multi-Gate (IMG) Technology •  Back-gate utilized to optimize bias current and transconductance •  Free up front-gate voltage for signal path dynamic range •  Eliminate bias circuitry losses of single-gate technologies such as bulk

and FinFET GLOBALFOUNDRIES Confidential 16

Reverse-back-gate biasing optimizes gain efficiency while maintaining dynamic range

Conventional approach (non IMG) Approach w/ IMG

22FDX™ Base Platform and Extensions

•  22FDX Base Platform –  4 Core Vts (FBB & RBB) –  2 IO Vts @ 1.2/1.5/1.8v –  Passives –  SRAMs (HD, HC, LV, ULV,

TP) –  8T/12T libraries –  IP solutions for IoT, Mobile,

and RF –  Software controlled Fwd/

Rev body-bias


-ulp adds logic libraries and memory compiler optimized for 0.4v logic operation

-ull adds devices, libraries, and memory compilers to achieve 1pA/um leakage

-uhp adds optimized BEOL stacks, 12T libraries optimized at OD, high-speed SERDES (16/28GHz), and MIM capacitor

-rfa adds RF enablement , BEOL passives, and IP for BTLE, WiFi

Base platform PDK & IP Application-optimized extensions

Relative Fmax 1.0 0.8 0.6 0.4 0.2 1.2

22FDXTM Offers 3 Types of Transistors, Optimized for Performance vs. Power


SLVT/LVT •  Lowest VT •  Optimized for FBB •  Highest performance

RVT/HVT •  Mid-range VT •  Optimized for RBB •  Balance of low leakage

and high performance ULL •  Adds triple gate oxide layer •  Longer gate length •  Coupled with RBB

achieves ≈1pA/um leakage

22FDX™ Provides FinFET-like Power Efficiency

GLOBALFOUNDRIES 19

Forward Body-Bias (FBB) Extends FD-SOI Flexibility

Frequency vs. Total Power 1.80

1.60

1.40

1.20

1.00

0.80

0.60 0.40 0.60 0.80 1.00 1.20 1.40

Total Power (normalized)

Freq. (normalized)

•  50% lower power at same frequency

•  40% faster performance at same power

• Same performance at lower Vdd

• FBB Advantage: Software-controlled body-bias enables dynamic tradeoffs between power, performance and leakage

28HKMG

22FDX 30% Faster

50% Less Power

40% Faster

50% Less Power

RO-Based Metric: INV2, NAND2x1, NOR2x1, NAND3x1 (each one has its own RO) Wire load is added in each stage of RO (FO = 3) Delay / Iddq is estimated by taking weighted average of 4 ROs Delay/Iddq metric = (0.4*INV+0.2*NAND2+0.2*NOR2+0.2*NAND3) Iddq / Delay is estimated @ tt, 25C 70% dynamic and 30% Static Power for Total Power estimation.

IoT Example: Remote Security Camera Application


Optimize Standby and Dynamic Power

22FDX Delivers:   10x lower static power w/ Reverse body-bias   Up to 92% lower active power with forward body-bias   RF integration for reduced BOM cost and 50% lower power

Wakes up Image Processor to zoom in and analyze potential threat

Detects motion

Wakes up comms to transmit message

22FDX die

Integrated RF

Wireless Comms

High Performance Application Processor

“Watchdog” Processor

FBB for lowest dynamic power

RBB for lowest leakage

FDSOI Case Study – Smart Watch

•  Next Generation Device Specification •  CPU Freq. 1.5+ GHz Vdd 0.6v •  SRAM up to 16Mb

•  -25C to +85C •  Integration Path: BLE, WiFi, PMIC

GLOBALFOUNDRIES 21

Ingenic 40nm Device today

Smart Watch User Case

40LP 28SLP FinFet FD FD+FBB FD+FBB+BLE

FD+FBB +BLE+WiFi

Power @ ISO Freq 1 0.71 0.39 0.33 0.23 0.23 0.23

Freq. @ ISO power 1 1.56 2.80 2.55 2.97 2.97 2.97

mW/Day (active and static)

334 238.6 131.2 109.7 76.3 85.9 108.3

Battery Life (Days) 4.55 6.37 11.58 13.85 19.91 17.7 14

Battery Life ISO 1 1.4 2.5 3.0 4.4 3.8 3.1

Battery life increases from 4.5 to 14+ days.

22FDX™ Lower Power on ARM M0

•  FDSOI has significant PPA advantage over bulk on low-end M0 applications


0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1

9T-1.2v 9T-1.1v 9T-1.0v 8T-0.8v

GF55LP GF40LP GF28SLP 22FDX

1

0.85

0.47

0.15

1 0.97

0.23 0.14

Dynamic Power

Std Cell Area

•  Timing signoff frequency @ 100MHz under SS corner •  Leakage/Dynamic power @ typical corner 25C •  Zero body bias on 28/22FD

Source: VeriSilicon

-70% power reduction -40% area reduction

-82% power reduction -85% area reduction

28nm Super low power

55, 40, 28nm Ultra low power

55nm, 40nm Ultra low leakage

High Duty Cycle Low Static Power

High Performance Low Dynamic Power

Duty Cycle Sleepy Chatty

Processing Performance

High

Low

Varying Requirements of IoT Edge Nodes


Wireless Smart Meters

Wildlife Camera

Building Sensors

High-end Wearables

IP Security Cameras

Trackers (Asset, People..) Low-end

Wearables Health and Fitness

Monitors

Smart Lighting

Drones, Robotics,

3D Printing

Edge Gateways

Home Automation

Duty Cycle Low

Standby: 83%

Active: 17%

Duty Cycle High

Active: 95%

Standby: 5%

Easy Design Migration from Bulk to 22FDX™

•  Digital Design Flow is similar to bulk digital design flow

•  The differences are taken care of in our Reference Flow releases

•  Reference flow is test-chip proven and available today

24 Bulk Flow New Step for 22FDX

Design Planning (FBB vs RBB)

Library Char + POCV/LVF variability

Lib char with BB (Added corners)

RTL Synthesis UPF Connectivity

Cell placement + Tapcell Placement +

CTS pre-route Implant-aware +

CNRX Placement

Routing Optimization Tapcell connections (BB mesh + HV rules)

Leakage recovery w/ Vt swapping + Lgate

optimization

Optional: use FBB/RBB performance/power

optimization

Sign-Off PEX/STA (+DPT extraction)

Optional: Add sign-off corners for dynamic BB

variables (PVTB)

Physical Verification + EMIR

In-Design Modules (DRC + PM + MetalFill +

EMIR)

22FD

X D

igita

l Des

ign

Flow

GLOBALFOUNDRIES

Test Chip Proven

22FDX™ has lower process complexity and faster cycle times than FinFET technology

•  22FDX has 50% fewer immersion lithography steps than FinFET –  Fewer Well and Post-Gate process steps than 28nm Poly/SiON –  Avoids complex Fin, Post-gate, RMG, MOL, and BEOL integration in FinFET


Process Complexity (a.u.)

28Poly/SiON 22FDX FinFET

Far_BEOL BEOL MOL RMG Post_Gate Gate Wells Active Fin


Design Services

EDA

IP

Industry Groups

Supply Chain

22FDX Ecosystem Expanding

Summary

•  Industry's first 22nm FD-SOI platform

•  Enables FinFET-like performance and power efficiency at 28nm cost

•  Provides design flexibility and intelligent control

•  Optimized for Mobile, Consumer, IoT and RF

GLOBALFOUNDRIES 27

22fdxtm enabling iot growth - meptecmeptec.org/resources/10 - dry.pdf · 22fdxtm enabling iot...

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