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25 nm InP HEMT LNAs and Receiver
Technology for the TWICE Instrument
6-15-2016
William R. Deal, Pekka Kangaslahti*, Alex Zamora, Erich Schlecht*,
Kevin Leong, Gerry Mei, Sean Shih, and Steven C. Reising**
Presented by Bill Deal
Northrop Grumman, Jet Propulsion Laboratory*
and Colorado State University**
Outline
• Outline
• Motivation
• 670 GHz Receiver Update
• 230-390 GHz Update
• Conclusion
2
TWICE Receiver Overview
• Three millimeter/submillimeter wave receivers on instrument
• Two receivers implemented in recently available 25 nm InP HEMT – 660-680 GHz dual direct detection receivers (two orthogonal polarizations) – 230-390 GHz broadband receiver
• This talk provides an overview of progress of these two receivers
3
Motivation
Scaling enables significantly enhanced performance
– 25 nm gatelength – fmax: 1.5 THz – fT: 0.61 THz
0.5umD S
0
5
10
15
20
25
30
35
10 100 1000
Tran
sistorg
ain(dB)
Frequency(GHz)
h21
MSG/MAG
fT=610GHz
fMAX=1.5THz
Submillimeter LNA’s
Ambient Temperature
[K]
Noise Figure
[dB]
Noise Temperatur
e [K]
HEMT 270 25
9.6 3.8
2355 400
GaAs Schottky
270 9.4 DSB (12.4 SSB*)
2236 DSB (4750 SSB*)
HEB Cryo 2.7 DSB (5.7 SSB*)
250 DSB (788 SSB*)
SIS 4 1.3 DSB (4.3 SSB*)
100 DSB (491 SSB*)
Ambient Temperature
[K]
Noise Figure
[dB]
Noise Temperatur
e [K]
HEMT 270 12 3361
GaAs Schottky
270 9.8 DSB (12.8 SSB*)
DSB 2500 (5236 SSB*)
670 GHz Comparison
850 GHz Comparison
InP HEMT LNA Noise Temperature
• InP HEMT LNA sensitivity approaches that of DSB mixers.
• InP HEMT LNA is superior to that of mixers operated in SSB mode.
• This extends to cryogenic operation. *Performance estimated from plot. SSB is calculated from DSB by adding 3 dB
Mixer DSB Noise Performance
After Dr. I. Mehdi
THz Monolithic Integrated Circuit (TMIC)
• Integration Challenges: • Need wide chip for circuit, but narrow for transition • Cross-shaped chip
• Passive TMIC Technology: • High compaction. • HEMT to HEMT spacing of 10 µm.
Coplanar Waveguide (CPW)Coplanar Waveguide (CPW)GNDSignal
InP
GND
• Transistor Technology: • 25 nm InP HEMT
230 µm
• 655 µm
375 µm
10 µm
670 GHz Receiver Approach
LNA1
LNA2
LNA3
BPF1
BPF2
VDI Detector
JPL Horn
View of module internals
BPF LNA LNA LNA BPF
Detector Video Amp
• Final receiver is an integrated, single-block 670 GHz Receiver
• Module includes: • Feedhorn (JPL) • LNA MMICs • Bandpass filters • Zero Bias Detector (VDI) • Video Circuitry
• Each functional block has been prototyped and evaluated
• Components have been evaluated together to evaluate integrated performance
Performance Goals NT 2500 K BW 20 GHz DC power 270 mW 13x50x8mm mm^3
670 GHz LNA
0
5
10
15
20
25
660 665 670 675 680
NoiseFigurean
dAssociated
Gain
(dB)
Frequency(GHz)
Packaged LNA TMIC
• 670-GHz LNA: – 8-stage, single-ended design – 2-Finger 12 µm HEMTs – 655 µm x 375 µm die size
Packaged 670-GHz LNA Measured Gain and Noise Figure
9.6 dB Measured Noise Figure (NT=2400K)
670 GHz LNA Gain vs. Temperature
�Gain=-0.1169�T-0.631
-5
-4
-3
-2
-1
0
1
2
-30 -20 -10 0 10 20 30 40
�Gain[dB]
�T[°C]
670 GHz LNA over Temperature � Gain vs. �T
~0.01 dB/C per Device Measured
Hot Plate
DUT Extender Port 1 Extender Port 2
Temp varied from 0 – 50 C
Detector Responsivity Measurements
10
-40
-32
-24
-16
-8
0
0
500
1000
1500
2000
2500
650 660 670 680 690
Inpu
tPow
er[d
Bm]
Respon
sivity[m
V/mW]
Frequency[GHz]
-40
-32
-24
-16
-8
0
0
500
1000
1500
2000
2500
650 660 670 680 690
Inpu
tPow
er[d
Bm]
Respon
sivity[m
V/mW]
Frequency[GHz]
Fabricated and tested Detector Prototyping Module
Detector Measured Responsivity vs. Frequency
Detector Measured Responsivity vs. Frequency
VDI Detector (Within Split-Block Waveguide)
Measured with two different
input power levels
670 GHz Radiation Pattern
11
Bandpass filter
• CNC Machined Bandpass filter
12
-60
-50
-40
-30
-20
-10
0
640 650 660 670 680 690 700
Inse
rtio
n L
oss
(d
B)
Frequency (GHz)
sn-002 sn-005 sn-006 sn-007 sn-008
Other Filter Fabrication Techniques
-80
-70
-60
-50
-40
-30
-20
-10
0
10
500 550 600 650 700 750
(dB)
(GHz)
s11(dB)s21(dB)s12(dB)s22(dB)
From DARPA THz Electronics
DRIE Filter
Filter formed with DRIE (Deep Reactive Ion Etch)
670 GHz “Breadboard” Receiver Noise Temperature
ColdLoadTemperature
[K]
HotLoadTemperature
[K]
HotLoadOutputVoltage
[mV]
ColdLoadOutputVoltage
[mV]
CalculatedNoiseTemperature
[K]
178 290.65 61.05 59.19 3406.81
BPF LNA LNA LNA BPF
Detector Video Amp
660-680 GHz Receiver Block Diagram: Hot Absorber
Cold Absorber
Room Temperature 670 GHz Receiver Noise Temperature Characterization
Output Voltage
230-390 GHz Receiver
• A single feedhorn integrated in the module will cover the 240, 310 GHz direct detection bands and the 380 GHz sounder band
• On-wafer test results for a full chip set
390LN1A
320LN1A
380MX1A 190DB1A
VDI Schottky diode
230-390 GHz Receiver
• 15-dB gain measured on-wafer • Matches simulations • Additional ripple from on-wafer
calibration/ noise in measurement
240 Channel
310 Channel
380 Soun der
Photograph of 230-390 GHz MMIC
230-390 GHz Receiver
240 Channel
310 Channel
Photograph of 230-320 GHz MMIC • 18-dB gain measured on-wafer • Matches simulations
230-390 GHz Receiver: Packaging Approach
300
400
500
600
700
800
900
1000
0
3
6
9
12
15
18
21
200 220 240 260 280 300 320
NoiseTem
perature[K
]
Gain[dB]
Frequency[GHz]
Gain[dB]S21packagedS21packagedTrecTDUT
on chip transitions
0
2
4
6
8
10
0
4
8
12
16
20
220 230 240 250 260 270 280 290 300 310 320
NoiseFigure[dB]
Associated
Gain[dB]
Frequency(GHz)
3.8 dB Measured Noise Figure (NT 400K) @ 240 GHz
4.3 dB Measured Noise Figure (NT 500K) @ 310 GHz
wirebonded microstrip to WG
transitions
230-390 GHz Receiver
-20
-16
-12
-8
-4
0
220 240 260 280 300 320
S-Pa
rameters[dB
]
Frequency[GHz]
S11S21S22 -20
-16
-12
-8
-4
0
220 240 260 280 300 320
S-Pa
rameters[dB
]
Frequency[GHz]
S11S21S22
596 µm CPW Line (Loss ~ 1.8 dB)
596 µm MS Line (Loss ~ 0.5 dB)
Single Transition Loss Single Transition Loss
Flange-to-flange measurement of depicted MMIC Flange-to-flange measurement of depicted MMIC
230-320 GHz Transition Loss Estimation
230-390 GHz Receiver
0
2
4
6
8
10
0
4
8
12
16
20
360 370 380 390
NoiseFigure[dB]
Associated
Gain[dB]
Frequency[GHz]
0
2
4
6
8
10
0
4
8
12
16
20
360 370 380 390
NoiseFigure[dB]
Associated
Gain[dB]
Frequency[GHz] 5 dB Measured Noise Figure (NT=650K) @ 380 GHz
230–390 GHz LNA With Integrated
narrowband waveguide transitions
360–390 GHz LNA Integrated waveguide
transitions
230-390 GHz Receiver
0
2
4
6
8
10
0
4
8
12
16
20
220 240 260 280 300 320 340 360 380 400
NoiseFigure[dB]
Associated
Gain[dB]
Frequency[GHz]
7 dB Measured Noise Figure (NT=1200K) @ 380 GHz
5.5 dB Measured Noise Figure (NT=650K) @ 310 GHz
6 dB Measured Noise Figure (NT=900K) @ 240 GHz
Currently: 230-390 GHz LNA with on-chip transition does not provide a significant advantage in receiver noise temperature compared to a diplexer followed by narrower band amplifiers
230-390 GHz Receiver
380 GHz second harmonic mixer - Broadband, 370 to 390 GHz - Conversion loss ~ 15 dB for 6 dBm
LO power - Balanced design uses 2 transistors
pumped 180° out of phase - Chip size 375 X 1000 μm2
LO input
VG VD/IF
RF waveguide antenna TRANSISTORS
fundamental Pout
230-390 GHz Receiver 190 GHz frequency multipliers
x2
x12
Conclusion
• Significant progress has been made in the new TWICE receivers – “Breadboard” demonstration of 670 GHz direct detect receiver complete – 230-390 GHz MMIC components demonstrated
• Currently completing 2nd MMIC design iteration
• Integrated Receiver housing on order
• Prototype will be assembled and tested by August